CN101599506A - A kind of bipolar transistor based on polysilicon emitter - Google Patents
A kind of bipolar transistor based on polysilicon emitter Download PDFInfo
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- CN101599506A CN101599506A CNA2009100553687A CN200910055368A CN101599506A CN 101599506 A CN101599506 A CN 101599506A CN A2009100553687 A CNA2009100553687 A CN A2009100553687A CN 200910055368 A CN200910055368 A CN 200910055368A CN 101599506 A CN101599506 A CN 101599506A
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Abstract
The present invention has disclosed a kind of bipolar transistor based on polysilicon emitter, comprise substrate, collector region that in described substrate, forms and the base that is positioned on the collector region, and the polysilicon emitter that deposits the polysilicon layer formation of two-layer at least different levels of doping at the upper surface of described substrate by priority.A kind of bipolar transistor based on polysilicon emitter provided by the present invention constitutes polysilicon emitter by the polysilicon layer that adopts different levels of doping, has formed energy barrier (energy barrier) in polysilicon emitter, thereby at low V
CEThe zone has significantly improved current gain.Its manufacture craft and existing process compatible do not need the mask that provides extra, do not bring additional technology difficulty, therefore are easy to realize.
Description
Technical field
The present invention relates to a kind of bipolar transistor, particularly a kind of bipolar transistor based on polysilicon emitter belongs to the silicon semiconductor device technical field.
Background technology
Bipolar transistor is one of device architecture commonly used that constitutes in modern large scale integrated circuit, and its service speed is fast, saturation voltage drop is little, current density is big and production cost is low.Bipolar transistor early adopts oxide isolation and diffused emitter to make mostly, promptly adopt ion implantation technology in substrate, to form diffused emitter, yet adopt oxide isolation to make the emitter of bipolar transistor and base size be difficult to further scaled, and adopt the ion implantation zone of non-emitter formation residual impairment in substrate easily, thereby influence the performance of device.
As a kind of replacement of diffused emitter, the industry-wide adoption polysilicon emitter is made bipolar transistor at present.Compare with diffused emitter, adopt polysilicon emitter to have following advantage: 1) by the inhibition (minority carrier in polysilicon mobility low) of polysilicon layer to minority carrier in the emitter, current gain increases substantially, make bipolar transistor reduce base width by improving base doping concentration not reducing the base punch through voltage and do not lose under the situation of current gain, realize the vertically scaled of bipolar transistor; 2) owing to emitter be use with polysilicon that substrate directly contacts in impurity form to outdiffusion, so do not exist when generating emitter because the rate of finished products problem that the residual impairment that the ion injection is caused causes with ion implantation.
At present, external modern high frequency and microwave power transistor generally adopt polysilicon emitter to improve its Performance And Reliability.The result shows, owing to can make more shallow emitter junction and narrower base width, just reduce transit time (transit time) and parasitic capacitance simultaneously with the method for dwindling the emission interface, the bipolar transistor that adopts polysilicon emitter to produce has higher emission effciency and excellent speed ability, and its current gain exceeds 3 to 7 times than the bipolar transistor that adopts conventional emitter to make.
Existing bipolar transistor structure based on polysilicon emitter comprises: substrate, collector region that forms in described substrate and the base that is positioned on the collector region form emitter by the upper surface deposition one deck doped polysilicon layer at substrate.The doping content of base is very high to keep sufficiently high base punch through voltage to prevent the break-through of emitter and collector usually in this structure.Yet, raising along with base doping concentration, the majority carrier electric current and the recombination current in the emitter junction depletion region that are injected into emitter from the base increase, (emitter efficiency of bipolar transistor is defined as from emitter and is injected into majority carrier electric current the base as can be known by the definition of emitter efficiency, be injected into the ratio that is injected into the majority carrier electric current the base three of the majority carrier electric current of emitter and the recombination currents in the emitter junction depletion region from emitter from the base), emitter efficiency can reduce, and makes this bipolar transistor at low collector emitter voltage (V
CE) under be difficult to improve current gain.
Summary of the invention
The object of the present invention is to provide a kind of bipolar transistor, be difficult to improve low V in the existing structure to solve based on polysilicon emitter
CEThe time the problem of current gain.
For solving the problems of the technologies described above, the invention provides a kind of bipolar transistor based on polysilicon emitter, it comprises substrate, the collector region that in described substrate, forms and be positioned at base on the collector region, the upper surface of described substrate has a polysilicon emitter, wherein, described polysilicon emitter is by the polysilicon layer formation of the two-layer at least different levels of doping of deposition successively.
Optionally, described polysilicon emitter forms by the polysilicon layer that successively deposits two-layer different levels of doping.
Optionally, in the described polysilicon emitter, the doping content of the ground floor polysilicon layer of deposition is lower than the doping content of the second layer polysilicon layer of back deposition earlier.Wherein, the doping content of ground floor polysilicon layer be second layer polysilicon layer doping content 0～20%.
Optionally, in the described polysilicon emitter, the thickness of the ground floor polysilicon layer of deposition is than the thin thickness of the second layer polysilicon layer of back deposition earlier.Wherein, the thickness of ground floor polysilicon layer is no more than 500 dusts.
Compare with existing structure, a kind of emitter that contains the polysilicon layer of two-layer at least different levels of doping based on the bipolar transistor of polysilicon emitter by making provided by the invention, in polysilicon emitter, form energy barrier (energy barrier), the majority carrier that hinders in the base injects emitter, and the majority carrier in the emitter can successfully inject to the base from emitter, thereby at low v
CEThe zone has significantly improved current gain.Its manufacture craft and existing process compatible do not need the mask that provides extra, do not bring additional technology difficulty, therefore are easy to realize.
Description of drawings
Fig. 1 is the structure chart of an embodiment of the bipolar transistor based on polysilicon emitter of the present invention;
Fig. 2 is of the present invention based on the bipolar transistor of polysilicon emitter and the normalized current gain and the V of existing structure
CECorresponding relation curve comparison diagram;
Fig. 3 is current gain growth rate and the V of the bipolar transistor based on polysilicon emitter of the present invention with respect to existing structure
CEThe corresponding relation curve chart.
Embodiment
For purpose of the present invention, feature are become apparent, the specific embodiment of the present invention is further described below in conjunction with accompanying drawing.It should be noted that accompanying drawing has adopted the form of simplifying very much, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Mention that in background technology existing doping content based on base in the bipolar transistor structure of polysilicon emitter is very high to prevent the break-through of emitter and collector usually, cause being difficult to improve low V
CEThe time the problem of current gain.
Core concept of the present invention is, the emitter that contains the polysilicon layer of two-layer at least different levels of doping by making, in polysilicon emitter, form energy barrier (energy barrier), the majority carrier that hinders in the base injects emitter, and the majority carrier in the emitter can successfully inject to the base from emitter, this has just reduced the electric current (base current) that injects emitter, has improved emitter efficiency simultaneously, thereby has improved current gain.
Because the forming process that the present invention relates to based on bipolar transistor polysilicon emitter in Semiconductor substrate of polysilicon emitter, other technologies are all identical with existing technology, so to all will not introducing such as the detailed process of subsequent techniques such as drawing of preorder technologies such as the formation of collector region in the Semiconductor substrate and base and electrode, but those skilled in the art should know this.
Fig. 1 is the structure chart based on the bipolar transistor 1 of polysilicon emitter of one embodiment of the present of invention.As shown in the figure, bipolar transistor 1 is the NPN type, it comprises silicon substrate 2, the N type collector region (Collector) 11 that in silicon substrate 2, forms and be positioned at P type base (Base) 12 on the collector region 11, the N+N-polysilicon emitter (Emitter) 13 that forms by the polysilicon layer 131 and 132 that successively deposits two-layer different levels of doping at the upper surface of silicon substrate 2.Because two-layer polysilicon layer (Poly) the 131, the 132nd, deposit in regular turn and form, its manufacture craft and existing one deck polysilicon layer form the process compatible of polysilicon emitter, do not need the mask that provides extra, do not bring additional technology difficulty, therefore be easy to realize.
In the described N+N-polysilicon emitter 13, the doping content of the ground floor polysilicon layer 131 of deposition is lower than the doping content of the second layer polysilicon layer 132 of back deposition earlier, and the thickness of ground floor polysilicon layer 131 is than the thin thickness of second layer polysilicon layer 132.Owing to will in polysilicon emitter, form energy barrier (energy barrier) on the one hand, other performance that also will guarantee bipolar transistor on the other hand is unaffected, so the thickness of the doping content difference of two-layer polysilicon layer and ground floor polysilicon layer need be controlled in certain scope.According to repeatedly the experiment draw, the doping content of ground floor polysilicon layer 131 be second layer polysilicon layer doping content 0～20%, the thickness of ground floor polysilicon layer 131 is no more than 500 dusts.
In present embodiment, the doping content of ground floor polysilicon layer 131 is 10
19Centimetre
-3, thickness is 500 dusts, the doping content of second layer polysilicon layer 132 is 10
20Centimetre
-3, thickness is 1500 dusts.
Certainly, in other embodiments, also can adopt other concentration or thickness, perhaps deposit two-layer above polysilicon layer.As long as doping content difference between the polysilicon layer of polysilicon emitter, will form energy barrier (energy barrier), the majority carrier that hinders in the base injects emitter, and the majority carrier in the emitter can successfully inject to the base from emitter, this has just reduced the electric current (base current) that injects emitter, improved emitter efficiency simultaneously, thereby at low V
CEThe zone has significantly improved current gain.
Technique effect of the present invention can be clear that in Fig. 2 and Fig. 3.Among Fig. 2, the normalized current gain and the V of bipolar transistor 1 of the present invention
CECorresponding relation curve 3 compare V with the corresponding relation curve 4 of existing structure
CEIn the time of in the scope of 0.2V～0.6V, the current gain in the curve 3 obviously improves sooner, simultaneously at V
CECurve 3 is very close with the back segment curve of curve 4 when higher, has promptly kept less current gain reduction.Bipolar transistor 1 of the present invention is with respect to the current gain growth rate and the V of existing structure from Fig. 3
CECorresponding relation curve 5 as can be seen, work as V
CEBe increased to the process of 0.6V from 0.2V, the current gain growth rate is dull to be increased up to V
CEReach maximum (near 80%) when reaching 0.4V, dullness is reduced to 0 afterwards.This has illustrated intuitively that with respect to existing structure bipolar transistor 1 of the present invention is at low V
CEThe zone has significantly improved current gain.It can also be seen that from the back segment curve of curve 5, work as V
CEFurther be increased in the process of 1.2V, the current gain growth rate has dropped to below 0, presents negative growth rate (rate of descent), yet with respect to low V
CEThe growth rate of zone current gain, the rate of descent of current gain is very little and maintain a more stable level (less than 10%) herein, promptly at V
CEKept less current gain reduction when higher.
In sum, a kind of bipolar transistor based on polysilicon emitter provided by the present invention constitutes polysilicon emitter by the polysilicon layer that adopts different levels of doping, has formed energy barrier (energy barrier) in polysilicon emitter, thereby at low V
CEThe zone has significantly improved current gain.Its manufacture craft and existing process compatible do not need the mask that provides extra, do not bring additional technology difficulty, therefore are easy to realize.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1, a kind of bipolar transistor based on polysilicon emitter, it comprises substrate, the collector region that in described substrate, forms and be positioned at base on the collector region, the upper surface of described substrate has a polysilicon emitter, it is characterized in that: described polysilicon emitter is by the polysilicon layer formation of the two-layer at least different levels of doping of deposition successively.
2, the bipolar transistor based on polysilicon emitter as claimed in claim 1 is characterized in that: described polysilicon emitter forms by the polysilicon layer that successively deposits two-layer different levels of doping.
3, the bipolar transistor based on polysilicon emitter as claimed in claim 2 is characterized in that: in the described polysilicon emitter, the doping content of the ground floor polysilicon layer of deposition is lower than the doping content of the second layer polysilicon layer of back deposition earlier.
4, the bipolar transistor based on polysilicon emitter as claimed in claim 3 is characterized in that: in the described polysilicon emitter, the doping content of ground floor polysilicon layer be second layer polysilicon layer doping content 0～20%.
5, the bipolar transistor based on polysilicon emitter as claimed in claim 2 is characterized in that: in the described polysilicon emitter, the thickness of the ground floor polysilicon layer of deposition is than the thin thickness of the second layer polysilicon layer of back deposition earlier.
6, the bipolar transistor based on polysilicon emitter as claimed in claim 5 is characterized in that: in the described polysilicon emitter, the thickness of ground floor polysilicon layer is no more than 500 dusts.
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| CNA2009100553687A CN101599506A (en) | 2009-07-24 | 2009-07-24 | A kind of bipolar transistor based on polysilicon emitter |
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| CNA2009100553687A CN101599506A (en) | 2009-07-24 | 2009-07-24 | A kind of bipolar transistor based on polysilicon emitter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022107A (en) * | 2011-09-27 | 2013-04-03 | 美国博通公司 | Fin-based bipolar junction transistor and method for fabrication |
| CN103137666A (en) * | 2011-11-23 | 2013-06-05 | 上海华虹Nec电子有限公司 | Vertical PNP bipolar junction transistor and production method thereof |
| CN108133892A (en) * | 2017-12-21 | 2018-06-08 | 深圳市晶特智造科技有限公司 | The production method of bipolar transistor |
| CN114093936A (en) * | 2021-09-28 | 2022-02-25 | 重庆中科渝芯电子有限公司 | Submicron polycrystalline silicon emitter bipolar junction transistor and manufacturing method thereof |
-
2009
- 2009-07-24 CN CNA2009100553687A patent/CN101599506A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022107A (en) * | 2011-09-27 | 2013-04-03 | 美国博通公司 | Fin-based bipolar junction transistor and method for fabrication |
| CN103022107B (en) * | 2011-09-27 | 2016-03-16 | 美国博通公司 | Fin bipolar junction transistor and manufacture method |
| CN103137666A (en) * | 2011-11-23 | 2013-06-05 | 上海华虹Nec电子有限公司 | Vertical PNP bipolar junction transistor and production method thereof |
| CN103137666B (en) * | 2011-11-23 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | A kind of longitudinal P NP bipolar transistor and manufacture method thereof |
| CN108133892A (en) * | 2017-12-21 | 2018-06-08 | 深圳市晶特智造科技有限公司 | The production method of bipolar transistor |
| CN108133892B (en) * | 2017-12-21 | 2020-12-11 | 浙江昌新生物纤维股份有限公司 | Method for manufacturing bipolar transistor |
| CN114093936A (en) * | 2021-09-28 | 2022-02-25 | 重庆中科渝芯电子有限公司 | Submicron polycrystalline silicon emitter bipolar junction transistor and manufacturing method thereof |
| CN114093936B (en) * | 2021-09-28 | 2024-02-09 | 重庆中科渝芯电子有限公司 | Submicron polycrystalline silicon emitter bipolar junction transistor and manufacturing method thereof |
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Application publication date: 20091209 |