CN101593713B - 铝引线焊垫中铜扩散缺陷的检测方法 - Google Patents
铝引线焊垫中铜扩散缺陷的检测方法 Download PDFInfo
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Abstract
一种铝引线焊垫中铜扩散缺陷的检测方法,提供半导体基底,所述半导体基底上具有铜互连线以及位于该铜互连线上铝引线焊垫,在所述铜互连线和铝引线焊垫之间具有金属阻挡层;对所述的半导体基底执行烘烤工艺;用清洗液清洗已执行烘烤工艺的半导体基底;执行完清洗工艺后,检测所述铝引线焊垫中的铜扩散缺陷;其中,所述清洗液对铜的刻蚀速率大于对铝的刻蚀速率。本发明还提供一种铝引线焊垫的制造方法。本发明的能够提高检测的准确度。
Description
技术领域
本发明涉及半导体制造技术领域,特别涉及一种半导体制造技术中铝引线焊垫中铜扩散缺陷的检测方法。
背景技术
铝金属具有电阻率低、易于刻蚀以及与介质材料具有较好的粘附特性等优点,在半导体集成电路的制造工艺中,常常用作引线焊垫材料。
铝引线焊垫一般通过沉积铝层、光刻和刻蚀的工艺形成。在专利号为5785236的美国专利中,公开了一种铝引线焊垫的制造方法。图1至图4为与所述的美国专利公开的铝引线焊垫的制造方法相关的结构的剖面示意图。
如图1所示,提供集成电路衬底10,在所述衬底10上形成有中间介质层14,通过镶嵌工艺在所述中间介质层14中形成铜互连线12。
如图2所示,在所述中间介质层14和铜互连线12上形成铝层20。
如图3所示,通过光刻工艺形成焊垫图案22,并刻蚀所述铝层20,形成铝引线焊垫20’,所述铝引线焊垫20’位于所述铜互连线12上方。
接着,去除所述焊垫图案22。
如图4所示,在所述铝引线焊垫20’、中间介质层14以及铜互连线12上形成钝化层26,并通过光刻和刻蚀工艺在所述钝化层26中形成开口32,所述开口32的底部露出所述铝引线焊垫20’。
由于铜易于扩散,在沉积铝层20之前,需要先在铜互连线12上形成如图5所示的金属阻挡层15,以阻止铜互连线12中的铜向铝引线焊垫20’中扩散。
然而,由于铜互连线12的上表面与中间介质层14的上表面之间具有高度差,常常会造成金属阻挡层15的厚度不均匀,且在具有所述高度差的地方有弱点(weak point)形成,使得金属阻挡层15的阻挡效果下降,通常会导致形成的器件的寿命下降。
一般通过加速老化实验来判断该金属阻挡层15的阻挡性能,即通过超出该半导体器件能够承受的条件(例如,高温烘烤)进行测试,判断金属阻挡层15阻挡性能。
现有的一种判断该金属阻挡层性能的加速老化实验的步骤如下:首先,对形成有铝引线焊垫的衬底10执行第一步烘烤工艺,温度为410℃,持续时间为30分钟;通过光束扫描所述基底表面判断由于铜扩散造成的缺陷的数目以及位置;接着,执行第二步烘烤工艺,该第二步烘烤温度为410℃,时间为30分钟;再次扫描所述的基底表面,判断经过该第二次烘烤后增加的铜扩散造成的缺陷的数目以及位置,根据所述的第一次扫描和第二次扫描获得的各自的缺陷的数目以及增加的数目,判断该金属阻挡层是否满足要求。
然而,所述的方法中,经过所述的第一步和第二步烘烤后,铝引线焊垫20’中的铝晶粒由于烘烤而产生聚集效应,形成如小山丘状的突起物缺陷,如图6的电子扫描显微镜拍摄的照片所示。铜互连线12中的铜扩散后产生的缺陷的电子扫描显微镜的照片如图7所示。由图6和图7可以看出,两种缺陷的照片较为相似,使得在加速老化实验后,通过扫描设备扫描铜扩散后产生的缺陷时,无法辨认所述的两种缺陷,使得扫描后的检测数据的准确性下降,以至于无法判断金属阻挡层的性能好坏,也就无法根据该实验结果对制造工艺做出相应的调整。
发明内容
本发明提供一种铝引线焊垫中铜扩散缺陷的检测方法,以解决现有的检测方法不准确的问题。
本发明提供的一种铝引线焊垫中铜扩散缺陷的检测方法,包括:
提供半导体基底,所述半导体基底上具有铜互连线以及位于该铜互连线上铝引线焊垫,在所述铜互连线和铝引线焊垫之间具有金属阻挡层;
对所述的半导体基底执行烘烤工艺;
用清洗液清洗已执行烘烤工艺的半导体基底;
执行完清洗工艺后,检测所述铝引线焊垫中的铜扩散缺陷;
其中,所述清洗液对铜的刻蚀速率大于对铝的刻蚀速率。
可选的,所述烘烤工艺分为两步或多个步骤进行。
可选的,在每一步烘烤之后,用所述的清洗液清洗所述半导体基底的表面。
可选的,所述的烘烤的温度为400至500℃,时间30至60分钟。
可选的,所述清洗液为含有硫酸、氢氟酸和双氧水的水溶液或者含有盐酸的水溶液。
可选的,所述清洗液为含有硫酸、氢氟酸和双氧水的水溶液,且所述清洗液中水、硫酸、双氧水和氢氟酸的体积比为50∶3∶7∶75。
可选的,所述清洗的时间为2至3分钟。
可选的,所述金属阻挡层为钽或氮化钽或其组合。
本发明还提供一种铝引线焊垫的制造方法,包括:
提供半导体基底,在所述半导体基底上具有介质层,在所述介质层中具有铜互连线;
在所述铜互连线和介质层上形成依次形成金属阻挡层和铝金属层;
图形化所述金属阻挡层和铝金属层,形成引线焊垫;
对形成有所述引线焊垫的半导体基底执行烘烤工艺;
用清洗液清洗已执行烘烤工艺的半导体基底;
执行完清洗工艺后,检测所述铝引线焊垫中的铜扩散缺陷;
判断所述的铜扩散缺陷的数目是否超出要求的范围;
若是,在后续的半导体基底的铝引线焊垫的制造工艺中,增大金属阻挡层的厚度;
其中,所述清洗液对铜的刻蚀速率大于对铝的刻蚀速率。
可选的,所述清洗工艺分为两步或多步进行。
可选的,在每一步烘烤之后,用所述的清洗液清洗所述半导体基底的表面。
与现有技术相比,上述技术方案中的其中一个具有以下优点:
通过具有对铜的刻蚀速率大于对铝的刻蚀速率清洗液所述半导体基底的表面,清洗掉所述铝引线焊垫中(包括表面)的铜扩散缺陷,使铝引线焊垫的铜扩散缺陷处产生凹陷,从而与铝引线焊垫中由于烘烤而形成的铝突起物形成较大差异,在后续检测步骤中,能够很好的区分凹陷与铝突起物,而该凹陷又与铜扩散缺陷对应,因而,凹陷缺陷的位置和数目能够反应铜扩散缺陷的位置与数目,使得对铜扩散缺陷的检测的准确度大大提高,也使得检测效率提高;
此外,检测获得的结果也能够对改进金属阻挡层以及铝引线焊垫的制造工艺提供有效的参考。
附图说明
图1至图4为现有的一种铝引线焊垫的制造方法相关的结构的剖面示意图;
图5为现有的一种具有金属阻挡层的铝引线焊垫的剖面结构示意图;
图6为现有铝引线焊垫的铝晶粒由于烘烤而产生的突起物缺陷的电子扫描显微镜照片;
图7为铜互连线中的铜由于扩散而导致的铝引线焊垫中产生的铜扩散缺陷的电子扫描显微镜照片;
图8为本发明的铝引线焊垫中铜扩散缺陷的检测方法的实施例的流程图;
图9为一种具有铜互连线以及铝引线焊垫的半导体基底的剖面示意图;
图10为本发明的铝引线焊垫中铜扩散缺陷的检测方法的实施例中经清洗液清洗后形成的凹陷的电子扫描显微镜照片;
图11为本发明的铝引线焊垫的制造方法的实施例的流程图。
具体实施方式
下面结合附图对本发明的具体实施方式做详细的说明。
在半导体集成电路的制造工艺中,在完成顶层金属(Top metal)层的制造工艺后,需要在该顶层金属层上形成铝引线焊垫,以将外部的引线粘合到该铝引线焊垫上。顶层金属层的材质一般为铜,在铜和铝引线焊垫之间通常会有金属阻挡层,以阻止铜向所述铝引线焊垫中扩散,同时也增大铜材质的顶层金属层与铝引线焊垫之间的粘附性能。金属阻挡层一般由钽或氮化钽或两者结合等能够有效阻挡铜扩散、而电阻率又不太高的材质形成。
在完成铝引线焊垫的制造后,会通过一系列的加速老化实验来验证或检测形成的半导体集成电路的稳定性能,其中对铝引线焊垫以及其以下的互连层(即所述的顶层金属层)稳定性的测试一般通过高温烘烤工艺来完成。其主要原理如下:通过施加高于形成的半导体器件能够承受的高温,烘烤该半导体器件,以判断金属阻挡层能否有效阻挡所述顶层金属层中的铜向铝引线焊垫中扩散;执行完高温烘烤工艺之后,需要检测铝引线焊垫中是否有扩散的铜而导致的缺陷(或称为铜扩散缺陷),该检测步骤检测一般通过光束扫描铝引线焊垫的表面的方法来完成。通过(明场或暗场)光束扫描,获取铝引线焊垫表面的形貌信息,并判断是否具有缺陷,进一步通过电子扫描显微镜识别该缺陷是否是铜扩散缺陷。
然而,由于在经过高温烘烤之后,铝引线焊垫中的铝晶粒由于烘烤会产生聚集效应,形成如小山丘状的突起物缺陷,而该缺陷与铜扩散至铝引线焊垫后形成的缺陷较为相似,使得在加速老化实验后扫描设备扫描铜扩散缺陷时,电子扫描显微镜无法辨认所述的两种缺陷,无法直接获得铜扩散缺陷的数目,使得扫描后的检测数据的准确性下降;以至于无法判断金属阻挡层的性能好坏,也就无法根据该实验结果对制造工艺做出相应的调整。若需要获得铜扩散缺陷数据,而是需要工程师对电子扫描显微镜扫描到的缺陷的照片一一识别,判断该缺陷是否铜扩散缺陷,这使得效率底下。
本发明提供一种铝引线焊垫中铜扩散缺陷的检测方法,在对具有铝引线焊垫的半导体基底执行烘烤工艺之后,通过对铜的刻蚀速率大于对铝的刻蚀速率的清洗液清洗所述半导体基底的表面,去除所述铝引线焊垫中的铜扩散缺陷,在具有铜扩散缺陷的位置形成凹陷,而由于烘烤形成的铝突起物缺陷为突起状,通过光束扫描和电子扫描显微镜检测缺陷时,能够很好的区分凹陷与凸起物缺陷,而凹陷缺陷即可反应铜扩散缺陷的数目以及位置。通过所述的方法,使检测工艺中识别铜扩散缺陷的能力提高,从而可提高获得的检测数据的准确性,能够真实或较为真实的反应铝引线焊垫中铜扩散缺陷的数目以及位置。
下面结合流程图以及剖面图对本发明的铝引线焊垫中铜扩散缺陷的检测方法进行详细描述。
图8为本发明的铝引线焊垫中铜扩散缺陷的检测方法的实施例的流程图。
请参考图8,步骤S100,提供半导体基底,所述半导体基底上具有铜互连线以及位于该铜互连线上铝引线焊垫,在所述铜互连线和铝引线焊垫之间具有金属阻挡层。
请参考图9,图9为一种具有铜互连线以及铝引线焊垫的半导体基底的剖面示意图。
请参考图9,半导体基底100上具有铜互连线104,所述铜互连线104位于所述半导体基底100上的介质层102中。该铜互连线104可以通过本领域技术人员所习知的镶嵌工艺或双镶嵌工艺形成。所述介质层102为氧化硅、氮化硅、磷硅玻璃、硼硅玻璃、硼磷硅玻璃等介质彩礼或黑钻石、氟硅玻璃等低介电常数材料。在所述半导体基底100以及所述介质层102之间还可以具有半导体器件以及互连线结构,所述晶体管包括但不限于金属氧化物半导体器件、电容器件。所述互连线结构中的互连线材质可以为铜或铝或铝铜合金。
在所述介质层102上形成依次有停止层103和钝化层108,所述刻蚀停止层100可以是氮化硅、碳化硅、氧化硅层等,也可由本领域技术人员所习知的其它介质材料形成;所述钝化层108可以是氮化硅或其它介质材料。
在所述停止层103和钝化层108中具有开口108a,所述开口108a位于所述铜互连线104上方相应位置,且所述开口108a的底部部分或全部露出所述铜互连线104的上表面。所述停止层103作为刻蚀所述开口108a的刻蚀终点检测层,用于保护所述铜互连线104的表面。
在所述开口108a的底部、侧壁以及所述开口108a周围的钝化层108上具有金属阻挡层110,所述金属阻挡层110可以是钽或氮化钽或其组合,其可以采用本领域技术人员所习知的沉积工艺沉积而成,这里不再赘述。所述金属阻挡层110用于阻挡所述铜互连线104中的铜向后续形成的铝引线焊垫中扩散。
在所述金属阻挡层110上形成有铝引线焊垫112,所述铝引线焊垫的材质为铝或铝铜合金,其可以采用本领域技术人员所习知的沉积工艺和刻蚀工艺形成,这里不再赘述。
请继续参考图8和图9,步骤S110,对所述的具有铝引线焊垫的半导体基底执行烘烤工艺。
在形成图9所示的结构之后,需要进一步通过加速老化实验验证或检测形成的该结构是否满足稳定性的要求。其中之一就是通过超出该结构可承受的高温对该结构执行烘烤工艺,在高温烘烤下,所述铜互连线104中铜会向其它可扩散的区域扩散,若图9中所示的金属阻挡层110膜层特性较差,就会有部分穿过该金属阻挡层110进入到所述铝引线焊垫112中,形成铜扩散缺陷。通过该步骤的烘烤工艺可加速铜的扩散。
其中,所述的烘烤工艺可通过两步或多个步骤执行。
本实施例中,所述烘烤工艺通过两步完成,执行第一步烘烤工艺的温度为400至500℃,烘烤的时间为30至60分钟。执行第二步烘烤的时间和温度可以与所述第一步烘烤工艺相同。
若金属阻挡层110有由于制造工艺而形成的缺陷,例如,弱点,通过所述的烘烤工艺,铜会由所述金属阻挡层110的缺陷处扩散至铝引线焊垫112中,在所述铝引线焊垫112中形成铜扩散缺陷,通过调整所述烘烤的时间,可使得所述的铜扩散缺陷向所述铝引线焊垫112表面移动,便于后续的检测。
步骤S120,用清洗液清洗所述的已经执行烘烤工艺的半导体基底。其中,所述清洗液对铜的刻蚀速率大于对铝的刻蚀速率。
在现有技术中,会直接对烘烤后的半导体基底100执行检测工艺,以检测该半导体基底100表面的铜扩散缺陷,从而判断金属阻挡层110是否满足要求,然而由于现有的检测工艺无法分辨铜扩散缺陷和铝凸起缺陷,使得现有的方法准确度下降,且效率较低。本实施例中,在执行检测工艺之前,先用对铜的刻蚀速率大于对铝的刻蚀速的率清洗液所述半导体基底的表面,清洗掉所述铝引线焊垫中(包括表面)的铜扩散缺陷,从而在铝引线焊垫的铜扩散缺陷处产生凹陷缺陷,如图10所示的凹陷缺陷的电子扫描照片,该凹陷缺陷与铝引线焊垫中由于烘烤而形成的铝突起物形成较大差异,在后续检测步骤中,能够很好的区分凹陷缺陷与铝突起物,而该凹陷缺陷又与铜扩散缺陷对应,因而,凹陷缺陷的位置和数目能够反应铜扩散缺陷的位置与数目,使得对铜扩散缺陷的检测的准确度大大提高,也使得检测效率提高。检测获得的结果能够对改进金属阻挡层110以及铝引线焊垫112的制造工艺提供有效的参考。
在本实施例中,所述清洗液为含有硫酸、氢氟酸和双氧水的水溶液,其中,该清洗液中水、硫酸、双氧水和氢氟酸的体积比为50∶3∶7∶75。在利用该清洗液清洗的步骤中,在室温下将具有所述的铝引线焊垫的半导体基底置于清洗液中,使得清洗液清洗所述半导体基底的表面,去除铝引线焊垫中的铜扩散缺陷,利用所述的清洗液的清洗时间为2至3分钟。此外,还可以用喷淋的方式对所述半导体基底表面进行清洗,即通过喷嘴将所述的清洗液喷洒至所述的半导体基底的表面,所述的半导体基底可以处于旋转状态,以加速清洗液清洗,这里不再赘述。当然,也可以采用其它的方式,但是无论用何种方式清洗,其主要原理是通过所述的清洗液与铝引线焊垫中的铜扩散缺陷反应,去除部分或全部的铜扩散缺陷,形成与铝突起物不同的形状,以便于后续的检测步骤的识别。
在其它的实施例中,所述清洗液还可以是盐酸的水溶液。此外,所述的清洗液也可以是其它所有对铜的刻蚀速率大于对铝的刻蚀速率的清洗液,这里不再一一列举,本领域技术人员能够根据本发明的实施例的教导将其它对铜的刻蚀速率大于对铝的刻蚀速率的清洗液应用于本发明的实施例的铝引线焊垫中铜扩散缺陷的检测方法,该方法应涵盖于本发明的保护范围中。
在其它的实施例中,所述的烘烤工艺可以分为多个步骤执行,在每一步烘烤之后,用所述的清洗液清洗所述半导体基底的表面,这里不再赘述。
步骤S130,执行完清洗工艺后,检测所述铝引线焊垫中的铜扩散缺陷。
将所述的半导体基底100表面的水汽烘干,并将该半导体基100底置于扫描设备中,通过光束扫描所述半导体基底100的表面,以获取半导体基底100上的铝引线焊垫112的形貌信息,进而获取铝引线焊垫112中的缺陷的数目以及位置,接着通过电子扫描显微镜获取铜扩散缺陷被清洗后留下的凹陷缺陷的数目以及位置,该凹陷缺陷的数目及位置即为铜扩散缺陷的数目以及位置。
由于通过清洗步骤形成凹陷缺陷,该缺陷与铝突起物缺陷形状差异较大,使得电子扫描显微镜很容易区分该两种缺陷,并识别出凹陷缺陷,从而使得对铜扩散缺陷的识别能力提高,提高检测的准确度。
本发明还提供一种铝引线焊垫的制造方法,图11为本发明的铝引线焊垫的制造方法的实施例的流程图。
请参考图11,步骤S200,提供半导体基底,在所述半导体基底上具有介质层,在所述介质层中具有铜互连线。
步骤S210,在所述铜互连线和介质层上形成依次形成金属阻挡层和铝金属层。
步骤S220,图形化所述金属阻挡层和铝金属层,形成引线焊垫。
步骤S230,对形成有所述引线焊垫的半导体基底执行烘烤工艺;所述清洗工艺分为两步或多步进行。
可选的,在每一步烘烤之后,用所述的清洗液清洗所述半导体基底的表面。
步骤S240,用清洗液清洗已执行烘烤工艺的所述的半导体基底;其中,所述清洗液对铜的刻蚀速率大于对铝的刻蚀速率。
步骤S250,执行完清洗工艺后,检测所述铝引线焊垫中的铜扩散缺陷。
步骤S260,判断所述的铜扩散缺陷的数目是否超出要求的范围。
步骤S270,若是,在后续的半导体基底的铝引线焊垫的制造工艺中,增大金属阻挡层的厚度。本发明的方法可形成稳定性较高的铝引线焊垫结构。
本发明虽然以较佳实施例公开如上,但其并不是用来限定本发明,任何本领域技术人员在不脱离本发明的精神和范围内,都可以做出可能的变动和修改,因此本发明的保护范围应当以本发明权利要求所界定的范围为准。
Claims (11)
1.一种铝引线焊垫中铜扩散缺陷的检测方法,其特征在于,包括:
提供半导体基底,所述半导体基底上具有铜互连线以及位于该铜互连线上铝引线焊垫,在所述铜互连线和铝引线焊垫之间具有金属阻挡层;
对所述的半导体基底执行烘烤工艺;
用清洗液清洗已执行烘烤工艺的半导体基底,以清洗所述铝引线焊垫中的铜扩散缺陷,在所述铝引线焊垫的铜扩散缺陷处产生凹陷缺陷;
执行完清洗工艺后,检测所述铝引线焊垫中的铜扩散缺陷;
其中,所述清洗液对铜的刻蚀速率大于对铝的刻蚀速率。
2.如权利要求1所述的铝引线焊垫中铜扩散缺陷的检测方法,其特征在于:所述烘烤工艺分为两步或多个步骤进行。
3.如权利要求1或2所述的铝引线焊垫中铜扩散缺陷的检测方法,其特征在于:在每一步烘烤之后,用所述的清洗液清洗所述半导体基底的表面。
4.如权利要求1所述的铝引线焊垫中铜扩散缺陷的检测方法,其特征在于:所述的烘烤的温度为400至500℃,时间30至60分钟。
5.如权利要求1或2或4所述的铝引线焊垫中铜扩散缺陷的检测方法,其特征在于:所述清洗液为含有硫酸、氢氟酸和双氧水的水溶液或者含有盐酸的水溶液。
6.如权利要求1或2或4所述的铝引线焊垫中铜扩散缺陷的检测方法,其特征在于:所述清洗液为含有硫酸、氢氟酸和双氧水的水溶液,且所述清洗液中水、硫酸、双氧水和氢氟酸的体积比为50∶3∶7∶75。
7.如权利要求1或2或4所述的铝引线焊垫中铜扩散缺陷的检测方法,其特征在于:所述清洗的时间为2至3分钟。
8.如权利要求1所述的铝引线焊垫中铜扩散缺陷的检测方法,其特征在于:所述金属阻挡层为钽或氮化钽或其组合。
9.一种铝引线焊垫的制造方法,其特征在于,包括:
提供半导体基底,在所述半导体基底上具有介质层,在所述介质层中具有铜互连线;
在所述铜互连线和介质层上依次形成金属阻挡层和铝金属层;
图形化所述金属阻挡层和铝金属层,形成引线焊垫;
对形成有所述引线焊垫的半导体基底执行烘烤工艺;
用清洗液清洗已执行烘烤工艺的半导体基底;
执行完清洗工艺后,检测所述铝引线焊垫中的铜扩散缺陷;
判断所述的铜扩散缺陷的数目是否超出要求的范围;
若是,在后续的半导体基底的铝引线焊垫的制造工艺中,增大金属阻挡层的厚度;
其中,所述清洗液对铜的刻蚀速率大于对铝的刻蚀速率。
10.如权利要求9所述的铝引线焊垫的制造方法,其特征在于:所述清洗工艺分为两步或多步进行。
11.如权利要求9或10所述的铝引线焊垫的制造方法,其特征在于:在每一步烘烤之后,用所述的清洗液清洗所述半导体基底的表面。
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