CN1992205B - Cmos图像传感器的制造方法 - Google Patents
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Abstract
本发明公开一种CMOS图像传感器的制造方法。该方法包括以下步骤:在形成焊盘之后,涂布钝化氧化物和钝化氮化物;执行氢退火;选择性去除所述钝化氮化物和所述钝化氧化物并对所述钝化氮化物和所述钝化氧化物进行第一清洗;通过去除所述焊盘区域的所述钝化氮化物和所述钝化氧化物露出所述焊盘并对所述焊盘进行第二清洗;涂布焊盘保护薄膜;执行滤色镜阵列、平坦化和微透镜处理;以及去除所述焊盘区域的所述焊盘保护薄膜。根据本发明公开的CMOS图像传感器的制造方法可去除像素区域的圆形缺陷。因此,通过提高CMOS图像传感器的质量和减小对光的反射比而提高了CMOS图像传感器的灵敏度。
Description
技术领域
本发明涉及CMOS图像传感器的制造方法,更具体地,本发明涉及从金属互连层形成的焊盘的后加工工艺。
背景技术
CMOS图像传感器的特性取决于接收外部光粒子(photo particle)的光电二极管的灵敏度。
这种灵敏度很大程度上取决于微透镜与光电二极管之间的距离和薄膜特性。
然而,传统像素块的钝化氮化物不像金属层一样完全反射光,而是阻挡并反射相对大部分的光至钝化氧化物。
因此,CMOS图像传感器的灵敏度降低。
同时,一般在CMOS图像传感器的情况下,不是在钝化氧化物的叠置之后,而是在钝化氮化物的叠置之后,执行与一般半导体制造工艺不同的用于改善低照度特性的氢退火工艺,用以进一步改善低照度特性。
从而,由于层间应力退化而在涉及弱钝化氧化物的晶片边缘区域中出现多种问题。
参照图1a至图1h,对传统CMOS图像传感器的制造方法存在的问题描述如下。
特别地,图1a至图1h描述在形成焊盘之后,从形成微透镜到露出焊盘的工艺。
首先在图1a中,在形成焊盘110之后,涂布(dope)钝化氧化物120和钝化氮化物130。
另一方面,不同于晶片内部的真正主芯片区域,在晶片边缘区域中存在不均匀状态的晶片边缘残余薄膜100,其是由于通过光学工艺对晶片边缘的处理而产生的。
由于不均匀地形成晶片边缘残余薄膜100,因此晶片边缘区域不具有粘合强度。
如图1b所示,在CMOS图像传感器的情况下,使用包含适当比率的氢气和氮气的气体执行氢退火,即热回流。
在热回流中,由于在晶片边缘残余薄膜100的氟硅酸盐玻璃(FSG)中包含的氟离子漂移,因此在晶片边缘上留下的钝化氮化物130的层间应力退化,或者出现晶片边缘剥落(peeling)140,其中在晶片边缘上留下的钝化氮化物130以圆形漂移。
另外,在热回流中,从晶片边缘剥落的缺陷转移到晶片内部的像素区域,圆形缺陷145表示转移到晶片内部的粒子。
如图1c所示,为了去除圆形缺陷145,在擦洗(scrubbing)之后通过光学和蚀刻工艺露出焊盘110的区域。
执行包括焊盘灰化步骤、溶剂清洗步骤和最终固化步骤的清洗和焊盘110的处理工艺。
尽管执行擦洗工艺以去除圆形缺陷145,但是存在仍未去除的圆形缺陷145。
如图1d所示,涂布焊盘保护薄膜150。
图1e示出通过彩色光学工艺形成的滤色镜阵列160的状态。
图1f示出通过平坦化层光学工艺形成的平坦化层170的状态,图1g示出通过热回流形成的凸状微透镜180的状态。
最后,图1h示出通过在焊盘110的区域中蚀刻焊盘保护薄膜150而露出焊盘110的状态,随后,可执行探针测试。
发明内容
因此,本发明的目的在于提供一种CMOS图像传感器的制造方法,其通过去除CMOS图像传感器的像素区域中的钝化薄膜改善了灵敏度,并通过去除从晶片边缘区域转移到像素区域的圆形缺陷改善了图像传感器的质量 和产量。
为实现上述目的,根据本发明的一个方案,提供一种CMOS图像传感器的制造方法,该方法包括以下步骤:在形成焊盘之后,涂布钝化氧化物和钝化氮化物;执行氢退火;选择性仅去除位于所述CMOS图像传感器的像素区域上的所述钝化氮化物,并对所述钝化氧化物进行清洗;通过去除所述焊盘区域的所述钝化氮化物和所述钝化氧化物露出所述焊盘并对所述焊盘进行第二清洗;涂布焊盘保护薄膜;执行滤色镜阵列、平坦化和微透镜处理;以及去除所述焊盘区域的所述焊盘保护薄膜。
优选地,第一清洗的步骤包括灰化和溶剂清洗的步骤。
另外,优选地,第二清洗的步骤包括灰化、溶剂清洗和第二灰化的步骤。
而且,优选地,所述焊盘保护薄膜是等离子体增强的正硅酸乙酯(PETEOS)薄膜或热固性树脂薄膜。
另外,优选地,所述焊盘保护薄膜具有200至600 的厚度。
而且,优选地,通过干蚀刻去除所述PE TEOS薄膜。
另外,优选地,通过氧灰化去除所述热固性树脂薄膜。
附图说明
图1a至图1h是示出传统CMOS图像传感器的制造方法的横截面图。
图2a至图2i是示出根据本发明实施例的CMOS图像传感器的制造方法的横截面图。
具体实施方式
以下,参照图2a至图2i详细描述本发明的实施例。
图2a至图2d是示出形成焊盘210之后的后加工工艺的横截面图。
如图2a所示,在形成焊盘210之后,依次涂布钝化氧化物220和钝化氮化物230。
在涂布钝化氧化物220之后,执行平坦化工艺,并涂布钝化氮化物230。
另一方面,不同于晶片内部的真正主芯片区域,在晶片边缘区域中存在不均匀状态的晶片边缘残余薄膜200,其是由于通过光学工艺对晶片边缘的 处理而产生的。
由于不均匀地形成晶片边缘残余薄膜200,因此晶片边缘区域不具有粘合强度。
如图2b所示,在CMOS图像传感器的情况下,使用包含适当比率的氢气和氮气的气体执行氢退火,即热回流。
在热回流中,由于在晶片边缘残余薄膜200的氟硅酸盐玻璃(FSG)中包含的氟离子漂移,因此在晶片边缘上留下的钝化氮化物230的层间应力退化,或者出现晶片边缘剥落240,其中在晶片边缘上留下的钝化氮化物230以圆形漂移。
另外,在热回流中,从晶片边缘剥落的缺陷转移到晶片内部的像素区域,并且产生圆形缺陷245。
图2c表示通过光学和蚀刻工艺蚀刻晶片的像素区域中的钝化氮化物230的状态。
即,在本发明中,不蚀刻在晶片的主芯片区域和晶片边缘的焊盘区域上存在的图像信号处理器(ISP)逻辑块中的钝化氮化物230,而去除像素区域中的钝化氮化物230。
因此,通过去除在像素区域中的钝化氮化物230上存在的圆形缺陷245,增加了CMOS图像传感器的质量。
另外,钝化氮化物230对光粒子的折射率相对大于钝化氧化物220,通过去除像素区域中的钝化氮化物230,增加了CMOS图像传感器的灵敏度。
在钝化氮化物的选择性蚀刻工艺之后,在随后的第一清洗工艺中执行灰化和溶剂清洗。
如图2d所示,在通过光学和蚀刻工艺蚀刻第一焊盘区域中的钝化氮化物230和钝化氧化物220之后,依次执行第二清洗工艺中包含的第一灰化、溶剂清洗和第二灰化。
由于不同于第一清洗工艺,在第二清洗工艺中已经露出焊盘,因此焊盘也被清洗,并通过执行第二灰化来防止焊盘腐蚀。
随后,如图2e所示,在整个衬底上形成焊盘保护薄膜250。
优选地,焊盘保护薄膜250是等离子体增强的正硅酸乙酯(PE TEOS)薄膜或热固性树脂薄膜。
焊盘保护薄膜250被涂布为具有200至 的厚度,从而在微透镜处理之后很容易从焊盘区域去除焊盘保护薄膜250。
随后,通过彩色光学工艺在像素区域上形成滤色镜阵列260(图2f),以及通过平坦化层光学工艺形成平坦化层270(图2g),然后在执行微透镜光学工艺之后,通过热回流形成凸状微透镜280(图2h)。
最后,通过去除焊盘保护薄膜250露出焊盘210。
在焊盘保护薄膜250是PE TEOS薄膜的情况下,通过干蚀刻去除焊盘保护薄膜250,而在焊盘保护薄膜250是热固性树脂薄膜的情况下,通过氧灰化去除焊盘保护薄膜250。
在根据本发明的CMOS图像传感器的制造方法中,提高了CMOS图像传感器的质量,减小了CMOS图像传感器中对光的反射比,并且通过在蚀刻像素区域的钝化氮化物的同时去除像素区域的圆形缺陷,提高了CMOS图像传感器的灵敏度。
尽管已参照某些优选实施例描述了本发明,但是对于所属技术领域人员而言,在不脱离所附权利要求限定的本发明的精神和本发明的范围的情况下,显然可以对本发明进行各种改变和修改。
因此,本发明的实施例应视为不是限制性的而是说明性的,在所附权利要求中限定了本发明的范围,并且在权利要求的等同范围内的所有变化均包含在本发明中。
Claims (5)
1.一种CMOS图像传感器的制造方法,该方法包括以下步骤:
在形成焊盘之后,涂布钝化氧化物和钝化氮化物;
执行氢退火;
选择性仅去除位于所述CMOS图像传感器的像素区域上的所述钝化氮化物,并对所述钝化氮化物和所述钝化氧化物进行清洗,其中清洗所述钝化氮化物和所述钝化氧化物的步骤包括灰化步骤和用溶剂清洗所述钝化氮化物和所述钝化氧化物的步骤;
通过去除所述焊盘区域的所述钝化氮化物和所述钝化氧化物露出所述焊盘并将所述焊盘进行第二清洗,其中所述第二清洗的步骤包括灰化、溶剂清洗和第二灰化的步骤;
涂布焊盘保护薄膜;
执行滤色镜阵列、平坦化和微透镜处理;以及
去除所述焊盘区域的所述焊盘保护薄膜。
2.根据权利要求1所述的CMOS图像传感器的制造方法,其中所述焊盘保护薄膜是等离子体增强的正硅酸乙酯薄膜或热固性树脂薄膜。
3.根据权利要求2所述的CMOS图像传感器的制造方法,其中所述焊盘保护薄膜具有200至的厚度。
4.根据权利要求2所述的CMOS图像传感器的制造方法,其中通过干蚀刻去除所述等离子体增强的正硅酸乙酯薄膜。
5.根据权利要求2所述的CMOS图像传感器的制造方法,其中通过氧灰化去除所述热固性树脂薄膜。
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KR1020050131435A KR100654052B1 (ko) | 2005-12-28 | 2005-12-28 | Cmos 이미지 센서의 제조방법 |
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US20070148805A1 (en) | 2007-06-28 |
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