CN1992205B - Cmos图像传感器的制造方法 - Google Patents
Cmos图像传感器的制造方法 Download PDFInfo
- Publication number
- CN1992205B CN1992205B CN2006101701803A CN200610170180A CN1992205B CN 1992205 B CN1992205 B CN 1992205B CN 2006101701803 A CN2006101701803 A CN 2006101701803A CN 200610170180 A CN200610170180 A CN 200610170180A CN 1992205 B CN1992205 B CN 1992205B
- Authority
- CN
- China
- Prior art keywords
- image sensor
- cmos image
- pad
- passivation nitride
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 33
- 150000004767 nitrides Chemical class 0.000 claims abstract description 29
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 239000012528 membrane Substances 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims description 21
- 238000004380 ashing Methods 0.000 claims description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract 1
- 238000010992 reflux Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229940104869 fluorosilicate Drugs 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
本发明公开一种CMOS图像传感器的制造方法。该方法包括以下步骤：在形成焊盘之后，涂布钝化氧化物和钝化氮化物；执行氢退火；选择性去除所述钝化氮化物和所述钝化氧化物并对所述钝化氮化物和所述钝化氧化物进行第一清洗；通过去除所述焊盘区域的所述钝化氮化物和所述钝化氧化物露出所述焊盘并对所述焊盘进行第二清洗；涂布焊盘保护薄膜；执行滤色镜阵列、平坦化和微透镜处理；以及去除所述焊盘区域的所述焊盘保护薄膜。根据本发明公开的CMOS图像传感器的制造方法可去除像素区域的圆形缺陷。因此，通过提高CMOS图像传感器的质量和减小对光的反射比而提高了CMOS图像传感器的灵敏度。
Description
技术领域
本发明涉及CMOS图像传感器的制造方法，更具体地，本发明涉及从金属互连层形成的焊盘的后加工工艺。
背景技术
CMOS图像传感器的特性取决于接收外部光粒子(photo particle)的光电二极管的灵敏度。
这种灵敏度很大程度上取决于微透镜与光电二极管之间的距离和薄膜特性。
然而，传统像素块的钝化氮化物不像金属层一样完全反射光，而是阻挡并反射相对大部分的光至钝化氧化物。
因此，CMOS图像传感器的灵敏度降低。
同时，一般在CMOS图像传感器的情况下，不是在钝化氧化物的叠置之后，而是在钝化氮化物的叠置之后，执行与一般半导体制造工艺不同的用于改善低照度特性的氢退火工艺，用以进一步改善低照度特性。
从而，由于层间应力退化而在涉及弱钝化氧化物的晶片边缘区域中出现多种问题。
参照图1a至图1h，对传统CMOS图像传感器的制造方法存在的问题描述如下。
特别地，图1a至图1h描述在形成焊盘之后，从形成微透镜到露出焊盘的工艺。
首先在图1a中，在形成焊盘110之后，涂布(dope)钝化氧化物120和钝化氮化物130。
另一方面，不同于晶片内部的真正主芯片区域，在晶片边缘区域中存在不均匀状态的晶片边缘残余薄膜100，其是由于通过光学工艺对晶片边缘的处理而产生的。
由于不均匀地形成晶片边缘残余薄膜100，因此晶片边缘区域不具有粘合强度。
如图1b所示，在CMOS图像传感器的情况下，使用包含适当比率的氢气和氮气的气体执行氢退火，即热回流。
在热回流中，由于在晶片边缘残余薄膜100的氟硅酸盐玻璃(FSG)中包含的氟离子漂移，因此在晶片边缘上留下的钝化氮化物130的层间应力退化，或者出现晶片边缘剥落(peeling)140，其中在晶片边缘上留下的钝化氮化物130以圆形漂移。
另外，在热回流中，从晶片边缘剥落的缺陷转移到晶片内部的像素区域，圆形缺陷145表示转移到晶片内部的粒子。
如图1c所示，为了去除圆形缺陷145，在擦洗(scrubbing)之后通过光学和蚀刻工艺露出焊盘110的区域。
执行包括焊盘灰化步骤、溶剂清洗步骤和最终固化步骤的清洗和焊盘110的处理工艺。
尽管执行擦洗工艺以去除圆形缺陷145，但是存在仍未去除的圆形缺陷145。
如图1d所示，涂布焊盘保护薄膜150。
焊盘保护薄膜150是等离子体增强的正硅酸乙酯(PE TEOS)薄膜或热固性树脂薄膜，并且焊盘保护薄膜150被涂布为具有200至 
的厚度，从而易于露出焊盘110。
图1e示出通过彩色光学工艺形成的滤色镜阵列160的状态。
图1f示出通过平坦化层光学工艺形成的平坦化层170的状态，图1g示出通过热回流形成的凸状微透镜180的状态。
最后，图1h示出通过在焊盘110的区域中蚀刻焊盘保护薄膜150而露出焊盘110的状态，随后，可执行探针测试。
发明内容
因此，本发明的目的在于提供一种CMOS图像传感器的制造方法，其通过去除CMOS图像传感器的像素区域中的钝化薄膜改善了灵敏度，并通过去除从晶片边缘区域转移到像素区域的圆形缺陷改善了图像传感器的质量 和产量。
为实现上述目的，根据本发明的一个方案，提供一种CMOS图像传感器的制造方法，该方法包括以下步骤：在形成焊盘之后，涂布钝化氧化物和钝化氮化物；执行氢退火；选择性仅去除位于所述CMOS图像传感器的像素区域上的所述钝化氮化物，并对所述钝化氧化物进行清洗；通过去除所述焊盘区域的所述钝化氮化物和所述钝化氧化物露出所述焊盘并对所述焊盘进行第二清洗；涂布焊盘保护薄膜；执行滤色镜阵列、平坦化和微透镜处理；以及去除所述焊盘区域的所述焊盘保护薄膜。
优选地，第一清洗的步骤包括灰化和溶剂清洗的步骤。
另外，优选地，第二清洗的步骤包括灰化、溶剂清洗和第二灰化的步骤。
而且，优选地，所述焊盘保护薄膜是等离子体增强的正硅酸乙酯(PETEOS)薄膜或热固性树脂薄膜。
另外，优选地，所述焊盘保护薄膜具有200至600 的厚度。
而且，优选地，通过干蚀刻去除所述PE TEOS薄膜。
另外，优选地，通过氧灰化去除所述热固性树脂薄膜。
附图说明
图1a至图1h是示出传统CMOS图像传感器的制造方法的横截面图。
图2a至图2i是示出根据本发明实施例的CMOS图像传感器的制造方法的横截面图。
具体实施方式
以下，参照图2a至图2i详细描述本发明的实施例。
图2a至图2d是示出形成焊盘210之后的后加工工艺的横截面图。
如图2a所示，在形成焊盘210之后，依次涂布钝化氧化物220和钝化氮化物230。
在涂布钝化氧化物220之后，执行平坦化工艺，并涂布钝化氮化物230。
另一方面，不同于晶片内部的真正主芯片区域，在晶片边缘区域中存在不均匀状态的晶片边缘残余薄膜200，其是由于通过光学工艺对晶片边缘的 处理而产生的。
由于不均匀地形成晶片边缘残余薄膜200，因此晶片边缘区域不具有粘合强度。
如图2b所示，在CMOS图像传感器的情况下，使用包含适当比率的氢气和氮气的气体执行氢退火，即热回流。
在热回流中，由于在晶片边缘残余薄膜200的氟硅酸盐玻璃(FSG)中包含的氟离子漂移，因此在晶片边缘上留下的钝化氮化物230的层间应力退化，或者出现晶片边缘剥落240，其中在晶片边缘上留下的钝化氮化物230以圆形漂移。
另外，在热回流中，从晶片边缘剥落的缺陷转移到晶片内部的像素区域，并且产生圆形缺陷245。
图2c表示通过光学和蚀刻工艺蚀刻晶片的像素区域中的钝化氮化物230的状态。
即，在本发明中，不蚀刻在晶片的主芯片区域和晶片边缘的焊盘区域上存在的图像信号处理器(ISP)逻辑块中的钝化氮化物230，而去除像素区域中的钝化氮化物230。
因此，通过去除在像素区域中的钝化氮化物230上存在的圆形缺陷245，增加了CMOS图像传感器的质量。
另外，钝化氮化物230对光粒子的折射率相对大于钝化氧化物220，通过去除像素区域中的钝化氮化物230，增加了CMOS图像传感器的灵敏度。
在钝化氮化物的选择性蚀刻工艺之后，在随后的第一清洗工艺中执行灰化和溶剂清洗。
如图2d所示，在通过光学和蚀刻工艺蚀刻第一焊盘区域中的钝化氮化物230和钝化氧化物220之后，依次执行第二清洗工艺中包含的第一灰化、溶剂清洗和第二灰化。
由于不同于第一清洗工艺，在第二清洗工艺中已经露出焊盘，因此焊盘也被清洗，并通过执行第二灰化来防止焊盘腐蚀。
随后，如图2e所示，在整个衬底上形成焊盘保护薄膜250。
优选地，焊盘保护薄膜250是等离子体增强的正硅酸乙酯(PE TEOS)薄膜或热固性树脂薄膜。
焊盘保护薄膜250被涂布为具有200至 的厚度，从而在微透镜处理之后很容易从焊盘区域去除焊盘保护薄膜250。
随后，通过彩色光学工艺在像素区域上形成滤色镜阵列260(图2f)，以及通过平坦化层光学工艺形成平坦化层270(图2g)，然后在执行微透镜光学工艺之后，通过热回流形成凸状微透镜280(图2h)。
最后，通过去除焊盘保护薄膜250露出焊盘210。
在焊盘保护薄膜250是PE TEOS薄膜的情况下，通过干蚀刻去除焊盘保护薄膜250，而在焊盘保护薄膜250是热固性树脂薄膜的情况下，通过氧灰化去除焊盘保护薄膜250。
在根据本发明的CMOS图像传感器的制造方法中，提高了CMOS图像传感器的质量，减小了CMOS图像传感器中对光的反射比，并且通过在蚀刻像素区域的钝化氮化物的同时去除像素区域的圆形缺陷，提高了CMOS图像传感器的灵敏度。
尽管已参照某些优选实施例描述了本发明，但是对于所属技术领域人员而言，在不脱离所附权利要求限定的本发明的精神和本发明的范围的情况下，显然可以对本发明进行各种改变和修改。
因此，本发明的实施例应视为不是限制性的而是说明性的，在所附权利要求中限定了本发明的范围，并且在权利要求的等同范围内的所有变化均包含在本发明中。
Claims (5)
1.一种CMOS图像传感器的制造方法，该方法包括以下步骤：
在形成焊盘之后，涂布钝化氧化物和钝化氮化物；
执行氢退火；
选择性仅去除位于所述CMOS图像传感器的像素区域上的所述钝化氮化物，并对所述钝化氮化物和所述钝化氧化物进行清洗，其中清洗所述钝化氮化物和所述钝化氧化物的步骤包括灰化步骤和用溶剂清洗所述钝化氮化物和所述钝化氧化物的步骤；
通过去除所述焊盘区域的所述钝化氮化物和所述钝化氧化物露出所述焊盘并将所述焊盘进行第二清洗，其中所述第二清洗的步骤包括灰化、溶剂清洗和第二灰化的步骤；
涂布焊盘保护薄膜；
执行滤色镜阵列、平坦化和微透镜处理；以及
去除所述焊盘区域的所述焊盘保护薄膜。
2.根据权利要求1所述的CMOS图像传感器的制造方法，其中所述焊盘保护薄膜是等离子体增强的正硅酸乙酯薄膜或热固性树脂薄膜。
3.根据权利要求2所述的CMOS图像传感器的制造方法，其中所述焊盘保护薄膜具有200至的厚度。
4.根据权利要求2所述的CMOS图像传感器的制造方法，其中通过干蚀刻去除所述等离子体增强的正硅酸乙酯薄膜。
5.根据权利要求2所述的CMOS图像传感器的制造方法，其中通过氧灰化去除所述热固性树脂薄膜。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050131435 | 2005-12-28 | ||
| KR10-2005-0131435 | 2005-12-28 | ||
| KR1020050131435A KR100654052B1 (ko) | 2005-12-28 | 2005-12-28 | Ｃｍｏｓ 이미지 센서의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1992205A CN1992205A (zh) | 2007-07-04 |
| CN1992205B true CN1992205B (zh) | 2011-01-12 |
Family
ID=37732132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101701803A Expired - Fee Related CN1992205B (zh) | 2005-12-28 | 2006-12-25 | Cmos图像传感器的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7611921B2 (zh) |
| KR (1) | KR100654052B1 (zh) |
| CN (1) | CN1992205B (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7317579B2 (en) | 2005-08-11 | 2008-01-08 | Micron Technology, Inc. | Method and apparatus providing graded-index microlenses |
| KR100731134B1 (ko) * | 2005-12-29 | 2007-06-22 | 동부일렉트로닉스 주식회사 | Ｃｍｏｓ 이미지 센서의 제조 방법 |
| KR100806777B1 (ko) | 2006-11-29 | 2008-02-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조 방법 |
| KR100866248B1 (ko) * | 2006-12-23 | 2008-10-30 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서의 제조방법 |
| KR100840646B1 (ko) * | 2006-12-29 | 2008-06-24 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서의 제조 방법 |
| KR100847830B1 (ko) * | 2006-12-29 | 2008-07-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서의 제조 방법 |
| KR100872981B1 (ko) * | 2007-07-19 | 2008-12-08 | 주식회사 동부하이텍 | 반도체 소자의 제조방법 |
| US7724439B2 (en) * | 2007-10-24 | 2010-05-25 | Aptina Imaging Corporation | Lens, a lens array and imaging device and system having a lens, and method of forming the same |
| KR20090064799A (ko) * | 2007-12-17 | 2009-06-22 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그의 제조방법 |
| KR101545630B1 (ko) * | 2008-12-26 | 2015-08-19 | 주식회사 동부하이텍 | 후면 수광 이미지센서의 제조방법 |
| KR20100076525A (ko) * | 2008-12-26 | 2010-07-06 | 주식회사 동부하이텍 | 후면 수광 이미지센서의 제조방법 |
| US9013612B2 (en) | 2010-08-20 | 2015-04-21 | Semiconductor Components Industries, Llc | Image sensors with antireflective layers |
| WO2021130141A1 (en) * | 2019-12-23 | 2021-07-01 | Ams Ag | Semiconductor device with a bond pad and a sandwich passivation layer and manufacturing method thereof |
| CN111916393B (zh) * | 2020-08-11 | 2022-04-15 | 广州粤芯半导体技术有限公司 | 半导体器件的制备方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5483096A (en) * | 1991-11-07 | 1996-01-09 | Seiko Instruments Inc. | Photo sensor |
| JP3084910B2 (ja) * | 1992-03-18 | 2000-09-04 | ヤマハ株式会社 | 配線形成法 |
| JP3561084B2 (ja) * | 1995-07-24 | 2004-09-02 | シャープ株式会社 | 回路内蔵受光素子、電子部品、光ピックアップ装置および回路内蔵受光素子の製造方法 |
| US6107191A (en) * | 1997-11-07 | 2000-08-22 | Lucent Technologies Inc. | Method of creating an interconnect in a substrate and semiconductor device employing the same |
| JP3296312B2 (ja) * | 1999-01-06 | 2002-06-24 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
| US6582988B1 (en) * | 1999-09-30 | 2003-06-24 | Taiwan Semiconductor Manufacturing Company | Method for forming micro lens structures |
| TW525223B (en) | 1999-12-14 | 2003-03-21 | United Microelectronics Corp | Method for removing photoresist and residual polymer from polysilicon gate |
| KR100390822B1 (ko) * | 1999-12-28 | 2003-07-10 | 주식회사 하이닉스반도체 | 이미지센서에서의 암전류 감소 방법 |
| KR100533166B1 (ko) * | 2000-08-18 | 2005-12-02 | 매그나칩 반도체 유한회사 | 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법 |
| TW513809B (en) * | 2002-02-07 | 2002-12-11 | United Microelectronics Corp | Method of fabricating an image sensor |
| KR100462757B1 (ko) * | 2002-03-14 | 2004-12-20 | 동부전자 주식회사 | 이미지 센서용 반도체 소자 제조 방법 |
| US6803250B1 (en) * | 2003-04-24 | 2004-10-12 | Taiwan Semiconductor Manufacturing Co., Ltd | Image sensor with complementary concave and convex lens layers and method for fabrication thereof |
| KR20050011955A (ko) * | 2003-07-24 | 2005-01-31 | 매그나칩 반도체 유한회사 | 마이크로렌즈 캡핑레이어의 들뜸 현상을 방지한 시모스이미지센서의 제조방법 |
| KR20050011951A (ko) | 2003-07-24 | 2005-01-31 | 매그나칩 반도체 유한회사 | 마이크로렌즈 캡핑레이어의 들뜸 현상을 방지한 시모스이미지센서의 제조방법 |
| KR20050041176A (ko) * | 2003-10-30 | 2005-05-04 | 매그나칩 반도체 유한회사 | 시모스 이미지센서의 제조방법 |
| KR20050079495A (ko) | 2004-02-06 | 2005-08-10 | 삼성전자주식회사 | 이미지 소자의 패드 형성 방법 |
| KR100649018B1 (ko) * | 2004-06-22 | 2006-11-24 | 동부일렉트로닉스 주식회사 | 이미지 센서의 금속패드 산화 방지 방법 |
| KR100504563B1 (ko) * | 2004-08-24 | 2005-08-01 | 동부아남반도체 주식회사 | 이미지 센서 제조 방법 |
| US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
| KR100807214B1 (ko) * | 2005-02-14 | 2008-03-03 | 삼성전자주식회사 | 향상된 감도를 갖는 이미지 센서 및 그 제조 방법 |
-
2005
- 2005-12-28 KR KR1020050131435A patent/KR100654052B1/ko not_active IP Right Cessation
-
2006
- 2006-12-21 US US11/644,221 patent/US7611921B2/en not_active Expired - Fee Related
- 2006-12-25 CN CN2006101701803A patent/CN1992205B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7611921B2 (en) | 2009-11-03 |
| KR100654052B1 (ko) | 2006-12-05 |
| CN1992205A (zh) | 2007-07-04 |
| US20070148805A1 (en) | 2007-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1992205B (zh) | Cmos图像传感器的制造方法 | |
| CN101853864B (zh) | 晶片键合方法 | |
| JP2013070079A (ja) | イメージセンサの無機物マイクロレンズの形成方法 | |
| US7670863B2 (en) | Method of fabricating complementary metal oxide silicon image sensor | |
| TWI394211B (zh) | 半導體製程方法 | |
| KR20020014519A (ko) | 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법 | |
| KR20030073985A (ko) | 이미지 센서용 반도체 소자 제조 방법 | |
| JP2008085335A (ja) | イメージセンサ及びその製造方法 | |
| KR20060136104A (ko) | 이미지 센서의 제조 방법 | |
| US7973347B2 (en) | Complementary metal oxide silicon image sensor and method of fabricating the same | |
| JP2012049249A (ja) | 半導体装置の製造方法 | |
| KR20000041461A (ko) | 개선된 이미지센서 제조방법 | |
| KR100843968B1 (ko) | 이미지센서의 제조방법 | |
| CN104952895A (zh) | 半导体晶片、受光传感器制造方法及受光传感器 | |
| US7595211B2 (en) | Method of manufacturing a complementary metal oxide silicon image sensor | |
| US8183080B2 (en) | Image sensor and manufacturing method thereof | |
| JP2008166761A (ja) | イメージセンサ及びその製造方法 | |
| CN100492650C (zh) | Cmos图像传感器的滤色器阵列及其重新形成方法 | |
| US20070243669A1 (en) | Method for manufacturing solid-state image pickup element and solid-state image pickup element | |
| KR100997678B1 (ko) | 씨모스 이미지 센서의 제조 방법 | |
| CN100536158C (zh) | 图像传感器及其制造方法 | |
| KR100790209B1 (ko) | 시모스 이미지센서 | |
| KR100720459B1 (ko) | 이미지 센서의 제조방법 | |
| TWI279836B (en) | Method of fabricating an image sensor | |
| US20080314864A1 (en) | Method for manufacturing image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110112 Termination date: 20131225 |