CN101582426A - Capless DRAM unit and preparation method thereof - Google Patents
Capless DRAM unit and preparation method thereof Download PDFInfo
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- CN101582426A CN101582426A CNA2009100851313A CN200910085131A CN101582426A CN 101582426 A CN101582426 A CN 101582426A CN A2009100851313 A CNA2009100851313 A CN A2009100851313A CN 200910085131 A CN200910085131 A CN 200910085131A CN 101582426 A CN101582426 A CN 101582426A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
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- 230000004888 barrier function Effects 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
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- 238000000151 deposition Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
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Abstract
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CN2009100851313A CN101582426B (en) | 2009-06-02 | 2009-06-02 | Capless DRAM unit and preparation method thereof |
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CN2009100851313A CN101582426B (en) | 2009-06-02 | 2009-06-02 | Capless DRAM unit and preparation method thereof |
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CN101582426A true CN101582426A (en) | 2009-11-18 |
CN101582426B CN101582426B (en) | 2011-06-15 |
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CN2009100851313A Expired - Fee Related CN101582426B (en) | 2009-06-02 | 2009-06-02 | Capless DRAM unit and preparation method thereof |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683347A (en) * | 2012-05-22 | 2012-09-19 | 清华大学 | Dynamic random access memory unit and preparation method thereof |
CN102683211A (en) * | 2011-03-14 | 2012-09-19 | 南亚科技股份有限公司 | A method of a dram memory with a two-sided transistor and a two-sided transistor structure |
WO2013026237A1 (en) * | 2011-08-22 | 2013-02-28 | 中国科学院微电子研究所 | Semiconductor device |
US8927966B2 (en) | 2012-05-22 | 2015-01-06 | Tsinghua University | Dynamic random access memory unit and method for fabricating the same |
US9012963B2 (en) | 2011-08-22 | 2015-04-21 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device |
CN110224028A (en) * | 2019-05-17 | 2019-09-10 | 南京邮电大学 | A kind of VDMOS device with the low EMI of L-type dielectric layer |
CN112038405A (en) * | 2020-08-19 | 2020-12-04 | 深圳市紫光同创电子有限公司 | Field effect transistor, preparation method thereof, static random access memory and integrated circuit |
US11985808B2 (en) | 2021-07-05 | 2024-05-14 | Changxin Memory Technologies, Inc. | Memory and method for manufacturing same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001082379A1 (en) * | 2000-04-21 | 2001-11-01 | Hitachi, Ltd. | Semiconductor device |
CN1622295A (en) * | 2004-12-21 | 2005-06-01 | 北京大学 | Method for preparing field effect transistor |
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2009
- 2009-06-02 CN CN2009100851313A patent/CN101582426B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001082379A1 (en) * | 2000-04-21 | 2001-11-01 | Hitachi, Ltd. | Semiconductor device |
CN1622295A (en) * | 2004-12-21 | 2005-06-01 | 北京大学 | Method for preparing field effect transistor |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683211A (en) * | 2011-03-14 | 2012-09-19 | 南亚科技股份有限公司 | A method of a dram memory with a two-sided transistor and a two-sided transistor structure |
CN102683211B (en) * | 2011-03-14 | 2014-11-19 | 南亚科技股份有限公司 | A method of a dram memory with a two-sided transistor and a two-sided transistor structure |
WO2013026237A1 (en) * | 2011-08-22 | 2013-02-28 | 中国科学院微电子研究所 | Semiconductor device |
US9012963B2 (en) | 2011-08-22 | 2015-04-21 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device |
CN102683347A (en) * | 2012-05-22 | 2012-09-19 | 清华大学 | Dynamic random access memory unit and preparation method thereof |
US8927966B2 (en) | 2012-05-22 | 2015-01-06 | Tsinghua University | Dynamic random access memory unit and method for fabricating the same |
CN102683347B (en) * | 2012-05-22 | 2015-06-24 | 清华大学 | Dynamic random access memory unit and preparation method thereof |
CN110224028A (en) * | 2019-05-17 | 2019-09-10 | 南京邮电大学 | A kind of VDMOS device with the low EMI of L-type dielectric layer |
CN110224028B (en) * | 2019-05-17 | 2022-06-17 | 南京邮电大学 | VDMOS device with L-type dielectric layer and low EMI |
CN112038405A (en) * | 2020-08-19 | 2020-12-04 | 深圳市紫光同创电子有限公司 | Field effect transistor, preparation method thereof, static random access memory and integrated circuit |
CN112038405B (en) * | 2020-08-19 | 2024-06-18 | 深圳市紫光同创电子有限公司 | Field effect transistor, preparation method thereof, static random access memory and integrated circuit |
US11985808B2 (en) | 2021-07-05 | 2024-05-14 | Changxin Memory Technologies, Inc. | Memory and method for manufacturing same |
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CN101582426B (en) | 2011-06-15 |
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