CN101572998A - Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way - Google Patents
Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way Download PDFInfo
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- CN101572998A CN101572998A CNA2008100247102A CN200810024710A CN101572998A CN 101572998 A CN101572998 A CN 101572998A CN A2008100247102 A CNA2008100247102 A CN A2008100247102A CN 200810024710 A CN200810024710 A CN 200810024710A CN 101572998 A CN101572998 A CN 101572998A
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- conducting
- metal substrate
- conducting wire
- substrate according
- insulated heat
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Abstract
The invention discloses a method for forming a conducting wire on an insulated heat-conducting metal substrate in a vacuum sputtering way, which comprises the following steps: the metal substrate is provided; the metal substrate is preprocessed so as to clean the surface of the metal substrate; a porous film is arranged on the metal substrate in a hard anodizing way; the metal substrate is post-processed; high heat-conducting glue is coated on the metal substrate; the outer layer of the metal substrate coated with the high heat-conducting glue is sputtered with a metal conducting layer and a metal protecting layer; a conductor part of an etch-resisting film shielding circuit diagram is etched to remove a nonconductor part and then an etch-resisting film is removed; and liquid photosensitive welding-resisting ink is printed. The invention has simple process, best heat conduction and environmental-friendly process.
Description
[technical field]
The present invention is a kind of method that forms the conducting wire on insulated substrate, particularly adopts vacuum splashing and plating technology to form the method for conducting wire on insulated heat-conducting metal substrate.
[background technology]
Tradition insulating heat-conductive substrate, as FR4 printed circuit board (PCB) (PCB), thermal conductivity (K) is about 0.36W/mK, its shortcoming is that hot property is relatively poor, and the conducting wire preparation method is sprayed conductive paint in regular turn on traditional insulating heat-conductive substrate on plastic base, electroless copper etches circuit printed foil circuit again, and wherein the shortcoming of electroless copper is to relate to environmental problems such as waste water treatment in the processing procedure.
Have not yet to see and on insulated heat-conducting metal substrate, directly adopt the vacuum splashing and plating mode to make the method for conducting wire.
[summary of the invention]
Main purpose of the present invention is to provide the method for vacuum splashing and plating formation conducting wire on a kind of insulated heat-conducting metal substrate, and making technology is simple, less contaminated environment.
For reaching above-mentioned purpose, the invention provides the method for vacuum splashing and plating formation conducting wire on a kind of insulated heat-conducting metal substrate, this method may further comprise the steps: a metal base is provided; Metal base is carried out pre-treatment, so that the cleaning surfaces of metal base; On metal base, carry out the film of hard anodizing last layer porous; This metal base is carried out reprocessing; Coating one deck high-heat-conductivity glue on this metal base; Metal conducting layer and metal protection layer on the outer sputter of the metal base that is coated with high-heat-conductivity glue; The conductor part of etch-resisting film screened circuit figure, the non-conductor part is removed in etching, sloughs etch-resisting film again; The printing liquid photosensitive welding resistant printing ink.
Compared with prior art, the present invention adopts the combination of vacuum splashing and plating and etching technique to form the conducting wire, and manufacturing process is simple, and thermal conductivity is good, and the technology environmental protection.
[description of drawings]
Fig. 1 forms the process chart of the method for conducting wire for vacuum splashing and plating on the insulated heat-conducting metal substrate of the present invention.
[embodiment]
See also shown in Figure 1ly, the method that vacuum splashing and plating forms the conducting wire on the insulated heat-conducting metal substrate of the present invention may further comprise the steps;
Step 201: a metal base is provided, and wherein, the material of this metal base is magnesium alloy (as AZ31B) or aluminium alloy;
Step 202: metal base is carried out pre-treatment, so that the cleaning surfaces of metal base, wherein, pre-treatment comprises degreasing, and pickling is cleaned;
Step 203: carry out the film of hard anodizing last layer porous on metal base, wherein, this hard anodizing carries out under the condition of direct current or pulse, and the thickness of this film is 15～25 μ m;
Step 204: this metal base is carried out reprocessing, and this reprocessing comprises cleaning, oven dry;
Step 205: coating one deck high-heat-conductivity glue on this metal base, this high-heat-conductivity glue is UV type or heat curing-type, the thickness of this floor height heat-conducting glue is 5～25 μ m, the pyroconductivity of this floor height heat-conducting glue be 2～3W/ (mk) or on, coating method adopts method of spin coating (Spin) or dip coated method (Dipping) or mode of printing;
Step 206: metal conducting layer and metal protection layer on the outer sputter of the metal base that is coated with high-heat-conductivity glue; Wherein, the step of jet-plating metallization conductive layer and metal protection layer is as follows:
The concrete steps of jet-plating metallization conductive layer: the metal base that will be coated with high-heat-conductivity glue is inserted in the vacuum chamber, is evacuated to 10
-5Behind the torr, feed argon gas and maintain 1～3 * 10
-3Torr, start the substrate back bias voltage-300～-600Volt, start sputter copper target this moment, the current density of control sputtered target material is at 0.1～1W/cm
2, carry out copper facing, about 0.5～5 μ m of copper film THICKNESS CONTROL;
The concrete steps of jet-plating metallization overcoat: have the metal base of copper film to insert another vacuum chamber sputter, feed argon gas and maintain 1～3 * 10
-3Torr starts sputter gold target material or nickel gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, plated with gold film or nickel gold thin film, about 0.1～1 μ m of the THICKNESS CONTROL of golden film or nickel gold thin film.
Step 207: etch-resisting film is with the mode of printing or the conductor part of the mode screened circuit figure of exposure imaging, and the non-conductor part is removed in etching, sloughs etch-resisting film again; Wherein, etch recipe is: phosphoric acid 500ml/L, and glacial acetic acid 400ml/L, nitric acid 100ml/L, etch temperature is a room temperature, etching period is 60-120s;
Step 208: the printing liquid photosensitive welding resistant printing ink, it is roasting in advance to put into baking oven, and roasting in advance temperature is controlled at 75 ℃, and the roasting in advance time is controlled at 30min, and by ultraviolet light polymerization, the parameter of ultraviolet light polymerization is 800mj/cm then
2, 3m/s, the time of ultraviolet light polymerization is 120s.
Claims (22)
1. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate, it is characterized in that this method may further comprise the steps:
(1) provides a metal base;
(2) metal base is carried out pre-treatment, so that the cleaning surfaces of metal base;
(3) on metal base, carry out the film of hard anodizing last layer porous;
(4) this metal base is carried out reprocessing;
(5) coating one deck high-heat-conductivity glue on this metal base;
(6) metal conducting layer and metal protection layer on the outer sputter of the metal base that is coated with high-heat-conductivity glue;
(7) conductor part of etch-resisting film screened circuit figure, the non-conductor part is removed in etching, sloughs etch-resisting film again;
(8) printing liquid photosensitive welding resistant printing ink.
2. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: the material of this metal base is a magnesium alloy.
3. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: the material of this metal base is an aluminium alloy.
4. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 2, and it is characterized in that: this magnesium alloy is AZ31B.
5. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: this pre-treatment comprises degreasing in the step (2), and pickling is cleaned.
6. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: this hard anodizing carries out under DC condition in the step (3).
7. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: this hard anodizing carries out under impulsive condition in the step (3).
8. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: the thickness of this film is 15～25 μ m in the step (3).
9. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: this reprocessing comprises cleaning in the step (4), oven dry.
10. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: the thickness of this floor height heat-conducting glue is 5～25 μ m in the step (5).
11. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the pyroconductivity of this floor height heat-conducting glue is 2～3W/ (mk) in the step (5).
12. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the pyroconductivity of this floor height heat-conducting glue is on 2～3W/ (mk) in the step (5).
13. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: coating method adopts method of spin coating in the step (5).
14. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: coating method adopts the dip coated method in the step (5).
15. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: coating method adopts mode of printing in the step (5).
16. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the step of jet-plating metallization conductive layer comprises in the step (6): the metal base that will be coated with high-heat-conductivity glue is inserted in the vacuum chamber, is evacuated to 10
-5Behind the torr, feed argon gas and maintain 1～3 * 10
-3Torr, start the substrate back bias voltage-300～-600Volt, start sputter copper target this moment, the current density of control sputtered target material is at 0.1～1W/cm
2, carry out copper facing, about 0.5～5 μ m of copper film THICKNESS CONTROL.
17. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 16, it is characterized in that: the step of jet-plating metallization overcoat comprises in the step (6), there is the metal base of copper film to insert another vacuum chamber sputter, feeds argon gas and maintain 1～3 * 10
-3Torr starts sputter gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, carry out gold-platedly, golden film thickness is controlled about 0.1～1 μ m.
18. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 16, it is characterized in that: the step of jet-plating metallization overcoat comprises in the step (6), there is the metal base of copper film to insert another vacuum chamber sputter, feeds argon gas and maintain 1～3 * 10
-3Torr starts sputter nickel gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, plated with nickel gold thin film, about 0.1～1 μ m of the THICKNESS CONTROL of nickel gold thin film.
19. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch recipe in the step (7) is: phosphoric acid 500ml/L, glacial acetic acid 400ml/L, nitric acid 100ml/L, etch temperature is a room temperature, and etching period is 60-120s.
20. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch-resisting film in the step (7) is shielded in the mode of printing.
21. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch-resisting film in the step (7) is shielded in the mode of exposure imaging.
22. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: step also comprises after (8), it is roasting in advance to put into baking oven, pre-roasting temperature is controlled at 75 ℃, the pre-roasting time is controlled at 30min, by ultraviolet light polymerization, the parameter of ultraviolet light polymerization is 800mj/cm then
2, 3m/s, the time of ultraviolet light polymerization is 120s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100247102A CN101572998B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100247102A CN101572998B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
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| Publication Number | Publication Date |
|---|---|
| CN101572998A true CN101572998A (en) | 2009-11-04 |
| CN101572998B CN101572998B (en) | 2012-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100247102A Expired - Fee Related CN101572998B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107969069A (en) * | 2018-01-12 | 2018-04-27 | 深圳恒宝士线路板有限公司 | A kind of production method of the separated metal substrate of thermoelectricity |
| CN110515273A (en) * | 2019-08-26 | 2019-11-29 | 江苏上达电子有限公司 | A kind of production of COF winding and transport method |
| TWI819237B (en) * | 2020-09-08 | 2023-10-21 | 健鼎科技股份有限公司 | Printed circuit board manufacturing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356554C (en) * | 2004-03-16 | 2007-12-19 | 私立逢甲大学 | Integrated radiating base plate and making method thereof |
| JP5413707B2 (en) * | 2005-06-06 | 2014-02-12 | Ｄｏｗａエレクトロニクス株式会社 | Metal-ceramic composite substrate and manufacturing method thereof |
| CN1831190A (en) * | 2006-04-12 | 2006-09-13 | 上海集成电路研发中心有限公司 | Method for preventing metals from being damaged by high density plasma chemical vapor deposition |
-
2008
- 2008-04-29 CN CN2008100247102A patent/CN101572998B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107969069A (en) * | 2018-01-12 | 2018-04-27 | 深圳恒宝士线路板有限公司 | A kind of production method of the separated metal substrate of thermoelectricity |
| CN110515273A (en) * | 2019-08-26 | 2019-11-29 | 江苏上达电子有限公司 | A kind of production of COF winding and transport method |
| TWI819237B (en) * | 2020-09-08 | 2023-10-21 | 健鼎科技股份有限公司 | Printed circuit board manufacturing method |
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| Publication number | Publication date |
|---|---|
| CN101572998B (en) | 2012-07-18 |
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Granted publication date: 20120718 |