CN101567397B - 光电转换装置及光电转换装置的制造方法 - Google Patents

光电转换装置及光电转换装置的制造方法 Download PDF

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Publication number
CN101567397B
CN101567397B CN200910136911.6A CN200910136911A CN101567397B CN 101567397 B CN101567397 B CN 101567397B CN 200910136911 A CN200910136911 A CN 200910136911A CN 101567397 B CN101567397 B CN 101567397B
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semiconductor layer
semiconductor
gas
photoelectric conversion
electrode
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Expired - Fee Related
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CN200910136911.6A
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Chinese (zh)
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CN101567397A (zh
Inventor
山崎舜平
鸟海聪志
横井智和
古野诚
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H10F71/1218—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe in microcrystalline form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
CN200910136911.6A 2008-04-25 2009-04-24 光电转换装置及光电转换装置的制造方法 Expired - Fee Related CN101567397B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008116079 2008-04-25
JP2008-116079 2008-04-25
JP2008116079 2008-04-25

Publications (2)

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CN101567397A CN101567397A (zh) 2009-10-28
CN101567397B true CN101567397B (zh) 2014-06-18

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US (2) US7888167B2 (enExample)
JP (1) JP5433286B2 (enExample)
CN (1) CN101567397B (enExample)
TW (1) TWI599062B (enExample)

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JP5377061B2 (ja) * 2008-05-09 2013-12-25 株式会社半導体エネルギー研究所 光電変換装置
US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same
CN101958361A (zh) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 透光薄膜太阳电池组件刻蚀方法
US8063460B2 (en) * 2009-12-18 2011-11-22 Intel Corporation Spin torque magnetic integrated circuits and devices therefor
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
TWI414065B (zh) * 2010-07-29 2013-11-01 Advanced Optoelectronic Tech 複合式基板、氮化鎵基元件及氮化鎵基元件的製造方法
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8796794B2 (en) 2010-12-17 2014-08-05 Intel Corporation Write current reduction in spin transfer torque memory devices
KR20120095786A (ko) * 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치
KR20120095790A (ko) * 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치
US9437758B2 (en) * 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US20120211065A1 (en) * 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US9159939B2 (en) * 2011-07-21 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
RU2594294C2 (ru) * 2011-10-11 2016-08-10 Эксегер Свиден Аб Способ для изготовления солнечных элементов, сенсибилизированных красителем, и солнечные элементы, изготовленные указанным способом
JP5709810B2 (ja) * 2012-10-02 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
US10033305B2 (en) * 2013-11-22 2018-07-24 Agency For Science, Technology And Research Energy harvesting device and method for forming the same

Citations (1)

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US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film

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US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same

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US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film

Also Published As

Publication number Publication date
JP5433286B2 (ja) 2014-03-05
TW201001722A (en) 2010-01-01
TWI599062B (zh) 2017-09-11
US20110193087A1 (en) 2011-08-11
CN101567397A (zh) 2009-10-28
US8198629B2 (en) 2012-06-12
JP2009283916A (ja) 2009-12-03
US7888167B2 (en) 2011-02-15
US20090267066A1 (en) 2009-10-29

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