CN101553935B - 垒层型太阳电池装置 - Google Patents
垒层型太阳电池装置 Download PDFInfo
- Publication number
- CN101553935B CN101553935B CN2006800563715A CN200680056371A CN101553935B CN 101553935 B CN101553935 B CN 101553935B CN 2006800563715 A CN2006800563715 A CN 2006800563715A CN 200680056371 A CN200680056371 A CN 200680056371A CN 101553935 B CN101553935 B CN 101553935B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- solar battery
- type
- light
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000035945 sensitivity Effects 0.000 claims abstract description 33
- 239000003566 sealing material Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 68
- 239000010410 layer Substances 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 229920005479 Lucite® Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 238000001338 self-assembly Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 229920003002 synthetic resin Polymers 0.000 abstract description 6
- 239000000057 synthetic resin Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000006059 cover glass Substances 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000011521 glass Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 15
- 238000005755 formation reaction Methods 0.000 description 14
- 238000002425 crystallisation Methods 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 230000004927 fusion Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009165 androgen replacement therapy Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000000981 epithelium Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- -1 ion implantation Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Description
Claims (12)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2006/323017 WO2008059593A1 (fr) | 2006-11-17 | 2006-11-17 | Dispositif de cellule solaire superposée |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101553935A CN101553935A (zh) | 2009-10-07 |
CN101553935B true CN101553935B (zh) | 2011-01-19 |
Family
ID=39401408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800563715A Expired - Fee Related CN101553935B (zh) | 2006-11-17 | 2006-11-17 | 垒层型太阳电池装置 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8716590B2 (zh) |
EP (1) | EP2083450A1 (zh) |
JP (1) | JP5032496B2 (zh) |
KR (1) | KR101069061B1 (zh) |
CN (1) | CN101553935B (zh) |
AU (1) | AU2006350830B2 (zh) |
CA (1) | CA2672158C (zh) |
HK (1) | HK1132376A1 (zh) |
TW (1) | TWI331402B (zh) |
WO (1) | WO2008059593A1 (zh) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8773378B2 (en) | 2010-10-01 | 2014-07-08 | Z124 | Smartpad split screen |
WO2009015221A2 (en) * | 2007-07-24 | 2009-01-29 | Sunpower Corporation | Rolling motion tracking solar assembly |
EP2357673A1 (en) * | 2008-11-19 | 2011-08-17 | Toppan Printing Co., Ltd. | Light reusing sheet and solar battery module |
FR2947955B1 (fr) * | 2009-07-08 | 2014-07-04 | Total Sa | Procede de fabrication de cellules photovoltaiques multi-jonctions et multi-electrodes |
WO2011088781A1 (zh) * | 2010-01-19 | 2011-07-28 | 华中科技大学 | 一种采用光子晶体的色散型太阳能电池 |
WO2011152459A1 (ja) * | 2010-06-03 | 2011-12-08 | 株式会社Si-Nano | 光蓄電装置 |
KR101144559B1 (ko) * | 2010-11-16 | 2012-05-11 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
CN102487106A (zh) * | 2010-12-02 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶体硅太阳能电池及其制造方法 |
NL2005944C2 (en) * | 2010-12-31 | 2012-07-03 | M H Mensink Beheer B V | Solar panel, solar cell converter and method of manufacturing a solar panel. |
EP2482333A1 (de) * | 2011-01-31 | 2012-08-01 | AZURSPACE Solar Power GmbH | Solarzellenempfänger |
US8878794B2 (en) | 2011-09-27 | 2014-11-04 | Z124 | State of screen info: easel |
JP6016292B2 (ja) * | 2011-10-13 | 2016-10-26 | デクセリアルズ株式会社 | 太陽電池用測定治具及び太陽電池セルの出力測定方法 |
CN103137716B (zh) * | 2011-11-25 | 2016-04-27 | 清华大学 | 太阳能电池、太阳能电池组及其制备方法 |
JP5351366B1 (ja) * | 2012-05-28 | 2013-11-27 | パナソニック株式会社 | 太陽電池及びその製造方法 |
US20140158177A1 (en) * | 2012-12-11 | 2014-06-12 | Green Light Industries, Inc. | Producing current that is not essentially steady direct current |
JP2016062931A (ja) * | 2014-09-15 | 2016-04-25 | 国立大学法人長岡技術科学大学 | 集光型太陽電池モジュール及び集光型太陽光発電システム |
GB2545433B (en) * | 2015-12-15 | 2017-12-20 | Grafmarine | Power generation and cell storage apparatus |
US9960302B1 (en) | 2016-10-18 | 2018-05-01 | Tesla, Inc. | Cascaded photovoltaic structures with interdigitated back contacts |
US10937915B2 (en) | 2016-10-28 | 2021-03-02 | Tesla, Inc. | Obscuring, color matching, and camouflaging solar panels |
US10381973B2 (en) | 2017-05-17 | 2019-08-13 | Tesla, Inc. | Uniformly and directionally colored photovoltaic modules |
US10985688B2 (en) | 2017-06-05 | 2021-04-20 | Tesla, Inc. | Sidelap interconnect for photovoltaic roofing modules |
US10734938B2 (en) | 2017-07-21 | 2020-08-04 | Tesla, Inc. | Packaging for solar roof tiles |
US10857764B2 (en) | 2017-07-25 | 2020-12-08 | Tesla, Inc. | Method for improving adhesion between glass cover and encapsulant for solar roof tiles |
US10978990B2 (en) | 2017-09-28 | 2021-04-13 | Tesla, Inc. | Glass cover with optical-filtering coating for managing color of a solar roof tile |
WO2019147594A1 (en) * | 2018-01-23 | 2019-08-01 | Glasspoint Solar, Inc. | Shipping systems and methods for insulated solar energy receivers |
US10454409B2 (en) | 2018-02-02 | 2019-10-22 | Tesla, Inc. | Non-flat solar roof tiles |
US10862420B2 (en) | 2018-02-20 | 2020-12-08 | Tesla, Inc. | Inter-tile support for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
JP7071387B2 (ja) | 2018-03-01 | 2022-05-18 | テスラ,インコーポレイテッド | 光起電屋根タイルをパッケージするためのシステムおよび方法 |
US11431279B2 (en) | 2018-07-02 | 2022-08-30 | Tesla, Inc. | Solar roof tile with a uniform appearance |
US11082005B2 (en) | 2018-07-31 | 2021-08-03 | Tesla, Inc. | External electrical contact for solar roof tiles |
US11245354B2 (en) | 2018-07-31 | 2022-02-08 | Tesla, Inc. | Solar roof tile spacer with embedded circuitry |
US11245355B2 (en) | 2018-09-04 | 2022-02-08 | Tesla, Inc. | Solar roof tile module |
US11581843B2 (en) | 2018-09-14 | 2023-02-14 | Tesla, Inc. | Solar roof tile free of back encapsulant layer |
US11431280B2 (en) | 2019-08-06 | 2022-08-30 | Tesla, Inc. | System and method for improving color appearance of solar roofs |
US11495415B2 (en) | 2020-06-26 | 2022-11-08 | Taka Solar Corporation | Solar cell systems and methods of making the same |
WO2022059134A1 (ja) * | 2020-09-17 | 2022-03-24 | 株式会社東芝 | 太陽電池、および太陽電池システム |
KR102500233B1 (ko) * | 2021-11-12 | 2023-02-16 | (주)소프트피브이 | 코어쉘 구조의 광발전 파티클을 포함하는 반도체 패키징 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3134906A (en) * | 1960-10-31 | 1964-05-26 | Siemens Ag | Photoelectric semiconductor device |
JP2000022184A (ja) * | 1998-07-03 | 2000-01-21 | Nippon Telegr & Teleph Corp <Ntt> | 球状または棒状結晶太陽電池およびその製造方法 |
WO2005088733A1 (ja) * | 2004-03-12 | 2005-09-22 | Kyosemi Corporation | 積層型太陽電池 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3427200A (en) * | 1964-09-24 | 1969-02-11 | Aerojet General Co | Light concentrator type photovoltaic panel having clamping means for retaining photovoltaic cell |
US3984256A (en) | 1975-04-25 | 1976-10-05 | Nasa | Photovoltaic cell array |
FR2327643A1 (fr) | 1975-10-09 | 1977-05-06 | Commissariat Energie Atomique | Convertisseur d'energie lumineuse en energie electrique |
US4069812A (en) * | 1976-12-20 | 1978-01-24 | E-Systems, Inc. | Solar concentrator and energy collection system |
FR2417188A1 (fr) | 1978-02-08 | 1979-09-07 | Commissariat Energie Atomique | Convertisseur photovoltaique d'energie solaire |
US4638110A (en) | 1985-06-13 | 1987-01-20 | Illuminated Data, Inc. | Methods and apparatus relating to photovoltaic semiconductor devices |
US4834805A (en) | 1987-09-24 | 1989-05-30 | Wattsun, Inc. | Photovoltaic power modules and methods for making same |
JPH07221335A (ja) * | 1993-12-09 | 1995-08-18 | Tonen Corp | 太陽電池モジュール |
US5437736A (en) | 1994-02-15 | 1995-08-01 | Cole; Eric D. | Semiconductor fiber solar cells and modules |
JPH07335925A (ja) * | 1994-06-03 | 1995-12-22 | Hitachi Ltd | 太陽電池 |
US5482568A (en) | 1994-06-28 | 1996-01-09 | Hockaday; Robert G. | Micro mirror photovoltaic cells |
US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
KR100377825B1 (ko) * | 1996-10-09 | 2003-07-16 | 나가다 죠스게 | 반도체디바이스 |
EP0866506B1 (en) * | 1996-10-09 | 2008-12-03 | Josuke Nakata | Semiconductor device |
US6057505A (en) | 1997-11-21 | 2000-05-02 | Ortabasi; Ugur | Space concentrator for advanced solar cells |
US6440769B2 (en) | 1999-11-26 | 2002-08-27 | The Trustees Of Princeton University | Photovoltaic device with optical concentrator and method of making the same |
EP1646089B1 (en) | 2000-10-20 | 2016-06-29 | Sphelar Power Corporation | Light-emitting or light-receiving semiconductor module and method for making the same |
US6762359B2 (en) * | 2001-01-15 | 2004-07-13 | Fuji Machine Mfg. Co., Ltd. | Photovoltaic panel and method of producing same |
AU2001277779B2 (en) | 2001-08-13 | 2005-04-07 | Sphelar Power Corporation | Semiconductor device and method of its manufacture |
JP3904559B2 (ja) | 2001-10-19 | 2007-04-11 | 仗祐 中田 | 発光又は受光用半導体モジュールおよびその製造方法 |
US6717045B2 (en) | 2001-10-23 | 2004-04-06 | Leon L. C. Chen | Photovoltaic array module design for solar electric power generation systems |
ES2315367T3 (es) | 2002-06-21 | 2009-04-01 | Kyosemi Corporation | Dispositivo receptor de luz o emisor de luz y su metodo de produccion. |
US8039731B2 (en) * | 2005-06-06 | 2011-10-18 | General Electric Company | Photovoltaic concentrator for solar energy system |
US7196262B2 (en) * | 2005-06-20 | 2007-03-27 | Solyndra, Inc. | Bifacial elongated solar cell devices |
AU2006335660B2 (en) | 2006-01-11 | 2012-01-19 | Sphelar Power Corporation | Semiconductor module for light reception or light emission |
-
2006
- 2006-11-17 CA CA2672158A patent/CA2672158C/en not_active Expired - Fee Related
- 2006-11-17 US US12/311,988 patent/US8716590B2/en not_active Expired - Fee Related
- 2006-11-17 JP JP2008544055A patent/JP5032496B2/ja not_active Expired - Fee Related
- 2006-11-17 KR KR1020097010535A patent/KR101069061B1/ko not_active IP Right Cessation
- 2006-11-17 CN CN2006800563715A patent/CN101553935B/zh not_active Expired - Fee Related
- 2006-11-17 EP EP06832895A patent/EP2083450A1/en not_active Withdrawn
- 2006-11-17 WO PCT/JP2006/323017 patent/WO2008059593A1/ja active Application Filing
- 2006-11-17 AU AU2006350830A patent/AU2006350830B2/en not_active Ceased
- 2006-12-12 TW TW095146407A patent/TWI331402B/zh not_active IP Right Cessation
-
2009
- 2009-12-30 HK HK09112284.1A patent/HK1132376A1/xx not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3134906A (en) * | 1960-10-31 | 1964-05-26 | Siemens Ag | Photoelectric semiconductor device |
JP2000022184A (ja) * | 1998-07-03 | 2000-01-21 | Nippon Telegr & Teleph Corp <Ntt> | 球状または棒状結晶太陽電池およびその製造方法 |
WO2005088733A1 (ja) * | 2004-03-12 | 2005-09-22 | Kyosemi Corporation | 積層型太陽電池 |
Non-Patent Citations (1)
Title |
---|
JP特开平7-335925A 1995.12.22 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008059593A1 (ja) | 2010-02-25 |
JP5032496B2 (ja) | 2012-09-26 |
TW200824136A (en) | 2008-06-01 |
WO2008059593A1 (fr) | 2008-05-22 |
KR101069061B1 (ko) | 2011-09-29 |
CA2672158A1 (en) | 2008-05-22 |
EP2083450A1 (en) | 2009-07-29 |
KR20090073242A (ko) | 2009-07-02 |
US20100018568A1 (en) | 2010-01-28 |
TWI331402B (en) | 2010-10-01 |
US8716590B2 (en) | 2014-05-06 |
AU2006350830B2 (en) | 2011-10-06 |
CA2672158C (en) | 2013-06-18 |
AU2006350830A1 (en) | 2008-05-22 |
HK1132376A1 (en) | 2010-02-19 |
CN101553935A (zh) | 2009-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101553935B (zh) | 垒层型太阳电池装置 | |
US10128394B2 (en) | Nanowire-based solar cell structure | |
US6239354B1 (en) | Electrical isolation of component cells in monolithically interconnected modules | |
US8309843B2 (en) | Photovoltaic cells based on nanoscale structures | |
US9712105B2 (en) | Lateral photovoltaic device for near field use | |
US9379270B2 (en) | Bifacial crystalline silicon solar panel with reflector | |
US7902453B2 (en) | Edge illumination photovoltaic devices and methods of making same | |
EP1724841B1 (en) | Multilayer solar cell | |
US8373061B2 (en) | Photovoltaic cells with stacked light-absorption layers and methods of fabricating the same | |
EP1715529A2 (en) | Solar cell with feedthrough via | |
US7838762B2 (en) | Solar cell | |
US20120152305A1 (en) | Solar cell module having interconnector and method of fabricating the same | |
KR101867855B1 (ko) | 태양 전지 | |
US20160172514A1 (en) | Photovoltaic Microstructure and Photovoltaic Device Employing Nanowires with Single-Side Conductive Strips | |
US20110132425A1 (en) | Solar cell module | |
EP3549175B1 (en) | Optoelectronic device | |
KR101739044B1 (ko) | 태양전지 모듈 및 이를 구비한 태양광 발전 시스템 | |
KR20180050020A (ko) | 태양 전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1132376 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1132376 Country of ref document: HK |
|
ASS | Succession or assignment of patent right |
Owner name: SIFEILE POWER CO., LTD. Free format text: FORMER OWNER: KYOSEMI CORP. Effective date: 20140425 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140425 Address after: Kyoto Prefecture, Kyoto, Japan, Hui Hui District, wine town, 949 times, 2 Patentee after: Sifeile Power Co., Ltd. Address before: Kyoto Japan Patentee before: Kyosemi Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110119 Termination date: 20141117 |
|
EXPY | Termination of patent right or utility model |