CN101546760A - Inverse parallel double diode - Google Patents
Inverse parallel double diode Download PDFInfo
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- CN101546760A CN101546760A CN200910143134A CN200910143134A CN101546760A CN 101546760 A CN101546760 A CN 101546760A CN 200910143134 A CN200910143134 A CN 200910143134A CN 200910143134 A CN200910143134 A CN 200910143134A CN 101546760 A CN101546760 A CN 101546760A
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- double diode
- parallel double
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Abstract
The invention discloses an inverse parallel double diode, characterized in that the chip is an inverse parallel integrated chip. Two inversely arranged PN junction chip A and B are arranged on the chip carrier. An isolation belt is arranged in the middle of the two chips. A silicon dioxide protection layer is coated at two ends of the isolation belt. The leadout parts at two ends of the PN junction are connected by a metal layer to form the inverse parallel of the chip A and B. The structure has the advantages that it can be packaged into DO-15, DO-41 standard axial diode form and can be sintered together with a solid discharge tube core or TVS tube chip to be an inverse parallel double diode integrated products. The inverse parallel double diode saves space, reduces the occupation space and matches with the lower capacitance solid discharge tube of the high-frequency electronic communication equipment whose capacitance value is less than 5 pf.
Description
Technical field
The present invention relates to a kind of inverse parallel double diode, be specifically related to a kind ofly promptly can be packaged into axial diode separately, also can be packaged into the integrated chip of inverse parallel double diode with solid discharging tube chip or TVS die stack sintering.
Background technology
Because the short circuit failure mode of solid discharging tube, is therefore used more reliable aspect the safeguard protection more and more than the open loop failure mode of gas discharge tube.But in data wire, ISDN, CATV, Modem and other high-frequency electronic communication equipments, present existing SA series, TPA series, P3XX series solid discharging tube capacitance big (usually more than the 20pf) and cause that the bigger decay of signal makes to use and be restricted.Therefore data wire, ISDN, CATV, Modem and other high-frequency electronic communication equipments press for low electric capacity solid discharging tube.And the capacitance of above-mentioned high-frequency electronic communication equipment is preferably the low electric capacity solid discharging tube less than 5pf.Circulation in the market be the above solid discharging tube of 20pf.
Summary of the invention
Main task of the present invention is to provide a kind of inverse parallel double diode, is specifically related to a kind of axial diode that promptly can be packaged into separately and also can be packaged into the inverse parallel double diode integrated chip with solid discharging tube core or TVS die stack sintering.
In order to solve above technical problem; a kind of inverse parallel double diode chip of the present invention; it is characterized in that: described chip is the inverse parallel integrated chip; structure is for being provided with PN junction chip A, the B of two reversed arrangement on chip carrier; the isolation strip is arranged in the middle of two chips; the two ends, isolation strip cover silicon dioxide layer of protection, and PN junction two ends extension is connected to form chip A, B inverse parallel by metal level.
Further, the two ends of described chip A, B are provided with phosphorous diffusion district and boron diffusion district respectively.
Further, the end face in the boron diffusion district of the end face in the phosphorous diffusion district of described chip A and chip B is same end face.
Further, the end face in the phosphorous diffusion district of the end face in the boron diffusion district of described chip A and chip B is same end face.
Further, carry out the break-through diffusion with boron in the described isolation strip.
The advantage of above structure is: with two PN junction reverse parallel connections; in electronic circuit, be usually used in two-way pressure limiting, and utilize less electric capacity of rectifier diode and solid discharging tube or two-way transient voltage inhibition organ pipe to connect and reduce the purpose of whole protecting circuit capacitance.Integrated chip of the present invention is that chip is made two-sided diffusion region symmetry, establish the integrated chip of isolation strip between two chips, it can be packaged into DO-15 separately, the axial diode profile of DO-41 standard also can be packaged into the inverse parallel double diode integrated products with solid discharging tube core or TVS die stack sintering.Biggest advantage also is conserve space, reduces area occupied, adapts to present electronic product and pursues small and exquisite trend, can be applicable to the low electric capacity solid discharging tube of the capacitance of high-frequency electronic communication equipment less than 5pf.Has vast market prospect.
Description of drawings
Figure is a structural representation of the present invention.
Embodiment
As shown in the figure, chip of the present invention is the integrated chip of PN utmost point reverse parallel connection.Concrete structure is: the silicon single crystal that will contain low phosphorus is as chip carrier 2, two chip A, B are set on this carrier 2, the structure of described chip A, B is identical, be and on the both ends of the surface of carrier 2, establish phosphorous diffusion district and boron diffusion district respectively, just the end face in the phosphorous diffusion district 3 of chip A and the end face in chip B boron diffusion district 4 are same end face, and boron diffusion district 1 end face of chip A and chip B phosphorous diffusion district 5 end faces are same end face.The direct Colaesce gold metal layer 6 of extension at above-mentioned phosphorous diffusion district 3,5 end faces and boron diffusion district 4,1 end face; specifically be connected to: phosphorous diffusion district 3 is communicated with alloying metal floor 6 by extension with boron diffusion district 4; cross extension in 5 boron diffusion districts 1 and be communicated with alloying metal floor 6 in the phosphorous diffusion district; like this; make two chip A, B realize PN utmost point reverse parallel connection; reach and in electronic circuit, be used for two-way pressure limiting, and utilize less electric capacity of rectifier diode and solid discharging tube or two-way transient voltage to suppress organ pipe and connect and reduce the purpose of whole protecting circuit capacitance.
Center between above-mentioned two chip A, B is provided with the boron diffusion district as isolation strip 7, and 7 both ends and two chip extensions part in addition all are coated with silicon dioxide oxide layer 8 in the isolation strip.
Claims (5)
1, a kind of inverse parallel double diode chip; it is characterized in that: described chip is the inverse parallel integrated chip; structure is for being provided with PN junction chip A, the B of two reversed arrangement on chip carrier; the isolation strip is arranged in the middle of two chips; the two ends, isolation strip cover silicon dioxide layer of protection, and PN junction two ends extension is connected to form chip A, B inverse parallel by metal level.
2, a kind of inverse parallel double diode chip according to claim 1, it is characterized in that: the two ends of described chip A, B are provided with phosphorous diffusion district and boron diffusion district respectively.
3, a kind of inverse parallel double diode chip according to claim 2 is characterized in that: the end face in the end face in the phosphorous diffusion district of described chip A and the boron diffusion district of chip B is same end face.
4, a kind of inverse parallel double diode chip according to claim 2 is characterized in that: the end face in the end face in the boron diffusion district of described chip A and the phosphorous diffusion district of chip B is same end face.
5, a kind of inverse parallel double diode chip according to claim 1 is characterized in that: carry out the break-through diffusion with boron in the described isolation strip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101431348A CN101546760B (en) | 2009-05-15 | 2009-05-15 | Inverse parallel double diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101431348A CN101546760B (en) | 2009-05-15 | 2009-05-15 | Inverse parallel double diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101546760A true CN101546760A (en) | 2009-09-30 |
| CN101546760B CN101546760B (en) | 2011-09-07 |
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ID=41193777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101431348A Expired - Fee Related CN101546760B (en) | 2009-05-15 | 2009-05-15 | Inverse parallel double diode |
Country Status (1)
| Country | Link |
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| CN (1) | CN101546760B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924141A (en) * | 2010-09-07 | 2010-12-22 | 如皋市日鑫电子有限公司 | High-power diode suitable for DO-27 and A-201AD package structures |
| CN108417613A (en) * | 2017-05-16 | 2018-08-17 | 上海长园维安微电子有限公司 | A kind of two-way TVS device and preparation method thereof with anti-paralleled diode |
| CN110010675A (en) * | 2019-04-09 | 2019-07-12 | 捷捷半导体有限公司 | A kind of punch mesolow plane TVS chip and preparation method thereof |
| WO2020220665A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for four-diode integrated chip |
| CN112151601A (en) * | 2020-11-24 | 2020-12-29 | 浙江里阳半导体有限公司 | Semiconductor device and method for manufacturing the same |
-
2009
- 2009-05-15 CN CN2009101431348A patent/CN101546760B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924141A (en) * | 2010-09-07 | 2010-12-22 | 如皋市日鑫电子有限公司 | High-power diode suitable for DO-27 and A-201AD package structures |
| CN108417613A (en) * | 2017-05-16 | 2018-08-17 | 上海长园维安微电子有限公司 | A kind of two-way TVS device and preparation method thereof with anti-paralleled diode |
| CN110010675A (en) * | 2019-04-09 | 2019-07-12 | 捷捷半导体有限公司 | A kind of punch mesolow plane TVS chip and preparation method thereof |
| WO2020220665A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for four-diode integrated chip |
| CN112151601A (en) * | 2020-11-24 | 2020-12-29 | 浙江里阳半导体有限公司 | Semiconductor device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101546760B (en) | 2011-09-07 |
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Granted publication date: 20110907 Termination date: 20140515 |