CN101546696A - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- CN101546696A CN101546696A CNA200910127767XA CN200910127767A CN101546696A CN 101546696 A CN101546696 A CN 101546696A CN A200910127767X A CNA200910127767X A CN A200910127767XA CN 200910127767 A CN200910127767 A CN 200910127767A CN 101546696 A CN101546696 A CN 101546696A
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000012545 processing Methods 0.000 title claims description 42
- 238000003672 processing method Methods 0.000 title claims description 7
- 238000011282 treatment Methods 0.000 claims abstract description 153
- 239000012530 fluid Substances 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 57
- 230000008569 process Effects 0.000 claims description 56
- 230000007246 mechanism Effects 0.000 claims description 22
- 208000028659 discharge Diseases 0.000 claims description 16
- 239000007788 liquid Substances 0.000 abstract description 21
- 238000007599 discharging Methods 0.000 abstract description 10
- 238000003860 storage Methods 0.000 abstract description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 60
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 30
- 239000000243 solution Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000011221 initial treatment Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
A substrate treating apparatus includes a treating tank for storing the treating liquid; a treating liquid supply unit for supplying the treating liquid to the treating tank; a treating liquid discharge unit for discharging the treating liquid from the treating tank; a first storage unit for storing in advance an initial life count specifying an allowable number of treatments of the substrates to be carried out with the treating liquid after an entire liquid replacement which replenishes the treating tank with a new supply the treating liquid from the treating liquid supply unit; a second storage device for storing in advance a normal life count specifying an allowable number of treatments to be carried out with the treating liquid after reaching the initial life count and after a partial liquid replacement which discharges part of the treating liquid in a predetermined amount from the treating tank through the treating liquid discharge device and replenishes, from the treating liquid supply device, a new supply of the treating liquid in an amount corresponding to the predetermined amount; and a control device for performing treatment of the substrates until the initial life count is reached after the entire liquid replacement, and after the initial life count is reached and the partial liquid replacement is made, performing treatment of the substrates while making the partial liquid replacement each time the normal life count is reached.
Description
Technical field
The present invention relates to semiconductor wafer and liquid crystal indicator are implemented substrate board treatment and the substrate processing method using same that regulations such as etching, cleaning are handled with glass substrate (the following substrate that only claims), carry out the technology that fluid exchange is handled while particularly relate to.
Background technology
In the past, as this device, can enumerate as lower device, this device has the treatment trough that is used to stockpile treatment fluid and flood substrate, supplies with the treatment fluid supply unit of treatment fluid and discharge the treatment fluid discharge portion (for example, with reference to TOHKEMY 2001-23952 communique) of treatment fluid from treatment trough to treatment trough.
For example, be under the situation of silicon system at substrate, along with passing through the treatment fluid treatment substrate, the silicon concentration in the treatment fluid raises, so processing speed descends gradually.Therefore,, carry out " partially liq exchange " in the moment of the substrate of having handled some, described " partially liq exchange " is meant, discharges a part of treatment fluid from the treatment fluid discharge portion, and supplies with the treatment fluid of the processing liquid measure that is equivalent to discharge.By the exchange of this partially liq, the processing speed (rate) that reduces is remained in the certain limit as target.Regulation number as substrate this moment, utilize the parameter of predefined being called " counting in useful life (life count) ", the substrate number of having handled (perhaps lot number) is counted, and the moment that arrives the counting in useful life in this count value is carried out the partially liq exchange.
But under the situation of the example in the past with this spline structure, there are the following problems.
Promptly, there is following situation: because by common initial treatment fluid that is called the parameter management untreatment base of counting useful life and the treatment fluid of having handled the substrate of some, and initial processing speed is than the processing speed height after the partially liq exchange, so when initial treatment fluid being carried out the partially liq exchange, can before processing speed drops to as the certain limit of target, carry out.Therefore, there are the following problems, even carrying out the partially liq exchange thereafter, sometimes also with processing speed still not the state of target approach scope proceed to handle, substrate is carried out unsuitable processing.
Summary of the invention
The present invention proposes in view of such situation, and its purpose is to provide the substrate board treatment and the substrate processing method using same that can carry out suitable processing to substrate by separately using count useful life.
The present invention is that the purpose that reaches such adopts following structure.
The present invention is a kind of substrate board treatment that utilizes the treatment fluid treatment substrate, and described device comprises following key element: described device comprises following key element: treatment trough, and it stockpiles treatment fluid, and substrate is carried out predetermined process; The treatment fluid feed mechanism, it supplies with treatment fluid to described treatment trough; The treatment fluid output mechanism, it discharges treatment fluid from described treatment trough; First memory cell, it is stored first useful life in advance and counts, count and stipulated number of processes described first useful life, described number of processes is meant, carrying out from described treatment fluid feed mechanism after whole fluid exchange of the new treatment fluid of described treatment trough supply, allowing to utilize the number of processes of the treatment fluid treatment substrate in the described treatment trough; Second memory cell, it is stored common useful life in advance and counts, count and stipulated number of processes described common useful life, this number of processes is meant, after reaching counting in described first useful life, carry out discharging a part of treatment fluid of ormal weight in the described treatment trough by described treatment fluid output mechanism, and supply with the partially liq exchange of the new treatment fluid suitable from described treatment fluid feed mechanism with described ormal weight, after the partially liq exchange, allow to utilize the number of processes of the treatment fluid treatment substrate in the described treatment trough; Control unit, they are after whole fluid exchange, and treatment substrate is until reaching counting in described first useful life, reach described first useful life counting and carry out the partially liq exchange after, reach at every turn and count described common useful life, while carry out partially liq exchange treatment substrate.
According to the present invention, control unit makes treatment fluid all discharge from the treatment fluid output mechanism, from the treatment fluid feed mechanism after treatment trough is supplied with new treatment fluid and is carried out whole fluid exchange, carry out the partially liq exchange in the moment of having passed through counting in first useful life, afterwards, carry out the partially liq exchange when counting common useful life whenever having passed through, handle substrate with this.Like this, count first useful life and count useful life usually, can handle substrate according to the state of treatment fluid, so can carry out suitable processing to substrate by separately using.
In addition, in the present invention, count being set at preferred described first useful life than counting big described common useful life.
After whole fluid exchange, because the processing speed height, so after handling the big just a plurality of substrates of first counting in useful life, carry out the partially liq exchange; After the partially liq exchange, because processing speed descends, so, carry out the partially liq exchange with than the little just common processing substrate number of common counting in useful life of first counting in useful life.Thus, can make processing speed be stabilized in scope as the processing speed of target.
In addition, in the present invention, preferred described first useful life, counting was for entering as the processing substrate number of times in the scope of the processing speed of target.
Experimentize in advance, how many substrate reprocessing speed of investigating are in target processing speed, and the processing number of substrate of this moment is set at counting in first useful life.Thus, can be after partially liq exchange processing speed be maintained scope as the processing speed of target.
In addition, in the present invention, preferably also have set mechanism, described set mechanism is used to set the counting and counting in common useful life of described second memory cell in first useful life of described first memory cell.
According to the treatment conditions of treatment fluid, the kind and the surface state of substrate, processing speed reduces the degree difference, therefore can suitably be set by set mechanism according to above-mentioned situation.
Description of drawings
Fig. 1 is the summary construction diagram of the substrate board treatment of embodiment.
Fig. 2 is the sequential chart that schematically shows the opportunity of fluid exchange.
Fig. 3 is the flow chart of expression action.
Embodiment
Below, with reference to the accompanying drawings to a preferred embodiment of the present invention will be described in detail.
Fig. 1 is the summary construction diagram of the substrate board treatment of embodiment.In addition, in the following description, as treatment fluid, to contain phosphoric acid (H
3PO
4) and the phosphoric acid solution of pure water be that example describes.
This substrate board treatment has treatment trough 1, and treatment trough 1 has inside groove 3 and is used to reclaim the water jacket 5 of the phosphoric acid solution that overflows from inside groove 3.In inside groove 3, set up keeping arm 7, described keeping arm 7 can the processing position in the inside groove 3 and between the position of readiness above the inside groove 3 elevation base plate W.This keeping arm 7 supports a plurality of substrate W to erect the posture butt.
Inside groove 3 has a pair of bleed pipe 9 that is used for supplying with to inside groove 3 phosphoric acid solution in the bottom.In addition, water jacket 5 has the outlet 11 that is used to discharge the phosphoric acid solution that is recovered in the bottom.Bleed pipe 9 is communicated with and is connected by circulation pipe 13 with outlet 11.On this circulation pipe 13, be equipped with pump 15, straight flow heater (in-line heater) 17, filter 19 successively from outlet 11 1 sides.Straight flow heater 17 has the function (for example, 120～180 ℃) that heats of phosphoric acid solution to circulation, and filter 19 has the function of the particle removed in the phosphoric acid solution etc.In addition, on circulation pipe 13, between outlet 11 and pump 15, be equipped with switch valve 21, between pump 15 and straight flow heater 17, be equipped with switch valve 23.
One distolateral connection of supply pipe 27 also is connected on the treatment fluid supply source 25.This treatment fluid supply source 25 stockpiles phosphoric acid (H under normal temperature (for example 25 ℃)
3PO
4).On supply pipe 27, be equipped with the control valve 29 that to control flow.Another of supply pipe 27 is distolateral to be communicated with and to be connected with the supply unit 31 that is positioned at inside groove 3 tops.The flow of setting with control valve 29 by supply pipe 27 from the phosphoric acid of treatment fluid supply source 25 supplies is supplied to inside groove 3 from supply unit 31.
In addition, supply unit 31 is equivalent to " treatment fluid feed mechanism " of the present invention.
On the above-mentioned circulation pipe 13, between pump 15 and switch valve 23, be equipped with branching portion 33.The bottom outlet 35 that uses when in addition, being formed with treatment fluid in discharging inside groove 3 rapidly in the bottom of above-mentioned inside groove 3.At this bottom outlet 35 be positioned at and be communicated with on the circulation pipe 13 of pump 15 upstreams one side and be connected with bottom discharge pipe 37.This bottom discharge pipe 37 is provided with switch valve 39.Be equipped with discharging tube 41 on branching portion 33, the phosphoric acid solution that described discharging tube 41 is used for discharging via bottom outlet 35 and bottom discharge pipe 37 imports drainage system.On this discharging tube 41, be equipped with switch valve 43.
In addition, above-mentioned discharging tube 41 is equivalent to " treatment fluid output mechanism " of the present invention.
In above-mentioned inside groove 3 to have set up densimeter 45 along the mode of its inwall.This densimeter 45 detects the predetermined substance that precipitate into the substrate W in the phosphoric acid solution.For example, be under the situation of silicon system at substrate W, measure the concentration of ordinary dissolution of silicon in the phosphoric acid solution, and export the concentration signal that records.
In addition, above water jacket 5, be equipped with pure water supply unit 47.This pure water supply unit 47 is communicated with and is connected with supply pipe 48 on being connected the pure water supply source.The control valve 49 that can adjust flow is installed on supply pipe 48.
The control part 51 of above-mentioned each member " control unit " of the present invention by being equivalent to is controlled in the lump.On this control part 51, be connected with first memory 53 and second memory 55.Content about their storages will be narrated below.Be connected with counter 57 and configuration part 59 on control part 51, to processing number or the lot number of each processing counting substrate W, described configuration part 59 is by device operator operation for the number of processes of counting substrate W for wherein said counter 57.In addition, control part 51 is according to the set point of counter 57 and first memory described later 53 and second memory 55, and console switch valve 43 and control valve 29 etc. are to carry out the exchange of whole fluid exchange described later and partially liq.And then control part 51 is suitably controlled so that the silicon concentration constant in the phosphoric acid solution according to from the concentration signal operation control valve 49 of densimeter 45 etc.
The first memory 53 that is equivalent to " first memory cell " of the present invention is stored in advance and is counted ILC first useful life, count ILC and stipulated number of processes described first useful life, this number of processes is meant, carrying out from supply unit 31 after treatment trough 1 is supplied with whole fluid exchange of new treatment fluid, allowing number of processes with the treatment fluid treatment substrate W in the treatment trough.
The second memory 55 that is equivalent to " second memory cell " of the present invention is stored in advance and is counted NLC common useful life, count NLC and stipulated number of processes described common useful life, this number of processes is meant, after arriving counting in first useful life, carry out discharging a part of treatment fluid of ormal weight the treatment trough from supply pipe 41, and supply with the partially liq exchange of the new treatment fluid that is equivalent to ormal weight from supply unit 31, after carrying out this partially liq exchange, allow number of processes with the treatment fluid treatment substrate W in the treatment trough.
Count ILC above-mentioned first useful life and count NLC common useful life and set by device operator's etc. " set mechanism " of the present invention by being equivalent to configuration part 59.
Below, describe counting ILC above-mentioned first useful life and counting NLC common useful life with reference to Fig. 2.In addition, Fig. 2 schematically shows the fluid exchange sequential chart on opportunity.
Initial what handle, when perhaps exchanging whole liquid along with the deterioration of liquid, control part 51 is supplied with phosphoric acid from supply unit 31 to treatment trough 1.Be the t1 moment among Fig. 2 this opportunity.Then, control part 51 is counted under the situation of ILC judging that number of processes from counter 57 reaches first useful life, carries out the partially liq exchange.Roughly, open switch valve 43 is discharged the phosphoric acid solution of ormal weight from treatment trough 1, and the off switch valve 43 then, supplies with and this discharge rate phosphoric acid of equivalent almost from supply unit 31.Be the t2 moment among Fig. 2 this opportunity.Afterwards, whenever the number of processes from counter 57 reaches when counting NLC common useful life, control part 51 is implemented partially liqs exchange (t3, t4 are constantly).
Count ILC above-mentioned first useful life and count NLC common useful life and as following, determine in advance.
At first, prepare with the substrate W identical type of handling by this device and pass through the substrate W of same treatment.Then, to set as the substrate W of actual product the same treatment condition, for example number, the phosphoric acid solution of simultaneously treated substrate W concentration and temperature, make substrate W be immersed in time in the phosphoric acid solution etc.And, after will under this condition, handling, measure processing speed corresponding to the substrate W of treatment conditions.This processing speed is the etch-rate (etching rate) of oxidation film and nitride film for example.At this, the target etch rate setting is between etch-rate ER2～ER5 in Fig. 2.So the result who handles a plurality of substrate W is, obtains and drop to the number of processes of reserving the high slightly etch-rate ER4 of surplus and speed ratio target etch speed lower limit from target etch speed ER5.The number of processes of this moment is set in the first memory 53 as counting ILC first useful life.And, improve by partially liq exchange etch-rate afterwards, but preestablish discharge rate and the quantity delivered that partially liq exchanges, be the low slightly etch-rate ER3 of etch-rate ER2 so that this speed becomes speed ratio target etch rate-limit.And then, after partially liq exchange, and will corresponding to the substrate W of condition after handling under this condition, measure etch-rate as described above, obtain the number of processes that is reduced to etch-rate ER4.This number of processes is set in the second memory 55 as counting NLC useful life usually.
In addition, specifically, count ILC and for example be 30～40 batches first useful life, and counting NLC useful life usually for example is about 20 batches.Because have configuration part 59, so can be set at suitable value with counting ILC first useful life and counting NLC useful life usually according to aforesaid experimental result.Therefore, even the different processing of treatment conditions also can be limited in etch-rate and proceed in the target zone to handle.
Below, with reference to Fig. 3 the action of said apparatus is described.Fig. 3 is the flow chart of expression action.In addition, when beginning, treatment trough 1 is the state that does not stockpile the sky of phosphoric acid solution.
Step S1
Step S2, S3
Make the number of processes of counter 57 increase (step S2).Then, whether reach according to number of processes and count ILC first useful life and carry out branch process (step S3).Specifically, reach in number of processes and to count under the situation of ILC first useful life, forward step S6 to and carry out the partially liq exchange.In addition, reach the moment t2 that the state of counting ILC first useful life is in Fig. 2.On the other hand, do not reach in number of processes and to count under the situation of ILC first useful life, forward step S4 to.At this, at first number of processes is not reached the situation of counting ILC first useful life and describe.In addition, do not reach the state of counting ILC first useful life and be in the moment t1 of Fig. 2 to constantly between the t2.
Step S4, S5
Substrate W is remained on the keeping arm 7, keeping arm 7 is dropped to handle the position, carry out the processing (step S4) of stipulated time.Keeping arm 7 is risen take out of substrate W (step S5).Then, get back to above-mentioned steps S2 and carry out reprocessing.
Step S6
Count under the consistent situation of ILC in number of processes and first useful life, control part 51 each parts of operation carry out the partially liq exchange.At first, straight flow heater 17 is stopped.Then, off switch valve 39,23 is also opened switch valve 43, and then opens switch valve 21.Then, pump 15 is only worked the stipulated time, discharge the phosphoric acid solution of ormal weight from treatment trough 1.Follow again, close open and close valve 43 and open switch valve 23.Next, open control valve 29, supply with the phosphoric acid that is equivalent to discharge rate to inside groove 3, and start pump 15 and straight flow heater 17, phosphoric acid solution after the partially liq exchange is adjusted to satisfies treatment conditions from supply unit 31.And then reset counter 57 is with the aggregate-value zero clearing of number of processes.In addition, this state is in the moment t2 of Fig. 2.
Step S7, S8
Make the number of processes of counter 57 increase (step S7).Then, whether reach according to number of processes and count NLC common useful life and come branch process (step S8).Specifically, reach in number of processes and to count under the situation of NLC common useful life, return step S6 and carry out the partially liq exchange.In addition, reach the state of counting NLC common useful life and be in moment t3 among Fig. 2.On the other hand, do not reach in number of processes and to count under the situation of NLC common useful life, forward step S9 to.At this, at first number of processes is not reached the situation of counting NLC common useful life and describe.In addition, do not reach the state of counting NLC common useful life and be in moment t2 among Fig. 2 between the t3 constantly.
Step S9, S10
Substrate W is remained on the keeping arm 7, and make keeping arm 7 drop to the processing position, carry out the processing (step S9) of stipulated time.Keeping arm 7 is risen take out of substrate W (step S10).
Step S11
According to the treatment fluid that is generated whether reach terminal life counting (will count first and common useful life after the addition can the maximum use number of processes) come branch process.In addition, the terminal life counting is counted by not shown terminal life counter.Under situation less than the terminal life counting, return step S7 and carry out processing next time, under the situation more than the terminal life counting, finish above-mentioned a series of processing.
As mentioned above, according to present embodiment, control part 51 makes phosphoric acid solution all discharge from discharging tube 41, and from supply unit 31 after treatment trough 1 is supplied with new phosphoric acid and is carried out whole fluid exchange, carry out partially liq exchange having passed through the moment of counting ILC first useful life, afterwards, the every process counted NLC common useful life and just carried out partially liq exchange, handles substrate with this.Count ILC first useful life and count NLC useful life usually by so separately using, can handle substrate W, therefore can carry out suitable processing substrate W according to the state of phosphoric acid solution.
In addition,, fixed by counting NLC common useful life during above-mentioned a series of processing, therefore sometimes as shown in phantom in Figure 2 in the past, do not have at etch-rate just to carry out the partially liq exchange under the situation of scope of target approach etch-rate, substrate W is carried out unsuitable processing.
The present invention is not limited to above-mentioned execution mode, can implement following distortion.
(1) in the above-described embodiments, be that example is illustrated to adopt phosphoric acid solution, but the treatment fluid by in addition, for example the processing carried out such as hydrofluoric acid solution also can be suitable for the present invention.
(2) in the above-described embodiments, configuration part 59 can suitably be set for the first time and count common useful life by having, but also it can be omitted.In this case, according to process object substrate W and treatment conditions listing condition in advance, when substrate board treatment is set, counted first useful life and count NLC in ILC and common useful life and deposit in first memory 53 and the second memory 55 and get final product.Thus, can prevent to rewrite the problem that causes owing to careless, and can the control device cost.
(3) in the above-described embodiments,,, handles treatment fluid while being circulated by having circulation pipe 13, even but in treatment trough 1, stockpiled the device of handling under the state of treatment fluid, also can play same effect.
Claims (12)
1. a substrate board treatment utilizes treatment fluid that substrate is handled, it is characterized in that,
Described device comprises:
Treatment trough, it stockpiles treatment fluid, and substrate is carried out predetermined process;
The treatment fluid feed mechanism, it supplies with treatment fluid to described treatment trough;
The treatment fluid output mechanism, it discharges treatment fluid from described treatment trough;
First memory cell, it is stored first useful life in advance and counts, count and stipulated number of processes described first useful life, described number of processes is meant, carrying out from described treatment fluid feed mechanism after whole fluid exchange of the new treatment fluid of described treatment trough supply, allowing to utilize the number of processes of the treatment fluid treatment substrate in the described treatment trough;
Second memory cell, it is stored common useful life in advance and counts, count and stipulated number of processes described common useful life, this number of processes is meant, after reaching counting in described first useful life, carry out the partially liq exchange, after the partially liq exchange, allow to utilize the number of processes of the treatment fluid treatment substrate in the described treatment trough, described partially liq exchange is meant, discharge a part of treatment fluid of ormal weight in the described treatment trough by described treatment fluid output mechanism, and supply with the partially liq exchange of the new treatment fluid suitable from described treatment fluid feed mechanism with described ormal weight;
Control unit, they are after whole fluid exchange, and treatment substrate is until reaching counting in described first useful life, reach described first useful life counting and carry out the partially liq exchange after, reach at every turn and count described common useful life, while carry out partially liq exchange treatment substrate.
2. substrate board treatment as claimed in claim 1 is characterized in that,
Count described first useful life and be set at than counting big described common useful life.
3. substrate board treatment as claimed in claim 1 or 2 is characterized in that,
Count described first useful life is the processing substrate number of times that enters as in the processing speed scope of target.
4. substrate board treatment as claimed in claim 1 or 2 is characterized in that,
This substrate board treatment also has set mechanism, and described set mechanism is used to set the counting and counting in common useful life of described second memory cell in first useful life of described first memory cell.
5. substrate board treatment as claimed in claim 3 is characterized in that,
This substrate board treatment also has set mechanism, and described set mechanism is used to set the counting and counting in common useful life of described second memory cell in first useful life of described first memory cell.
6. substrate board treatment as claimed in claim 1 or 2 is characterized in that,
This substrate board treatment also has the counter that the number of processes of substrate is counted.
7. substrate board treatment as claimed in claim 3 is characterized in that,
This substrate board treatment also has the counter that the number of processes of substrate is counted.
8. substrate board treatment as claimed in claim 4 is characterized in that,
This substrate board treatment also has the counter that the number of processes of substrate is counted.
9. substrate board treatment as claimed in claim 5 is characterized in that,
This substrate board treatment also has the counter that the number of processes of substrate is counted.
10. a substrate processing method using same utilizes treatment fluid that substrate is handled, it is characterized in that,
Described method comprises following operation:
Carry out supplying with the operation of whole fluid exchange of new treatment fluid to treatment trough;
Treatment substrate is until reaching the operation of counting first useful life, and count and stipulated that number of processes, described number of processes are meant described first useful life, allows to utilize the number of processes of the treatment fluid treatment substrate in the described treatment trough;
After reaching counting in described first useful life, the operation of carrying out the partially liq exchange, described partially liq exchange is meant, discharges a part of treatment fluid of ormal weight in the treatment trough, and the partially liq of the supply new treatment fluid suitable with described ormal weight exchanges;
The repeated treatments substrate is until reaching the operation of counting common useful life, and count and stipulated that number of processes, described number of processes are meant described common useful life, allows to utilize the number of processes of the treatment fluid treatment substrate in the described treatment trough.
11. substrate processing method using same as claimed in claim 10 is characterized in that,
Count described first useful life and be set at than counting big described common useful life.
12. as claim 10 or 11 described substrate processing method using sames, it is characterized in that,
Count described first useful life is the processing substrate number of times that enters as in the processing speed scope of target.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008078437 | 2008-03-25 | ||
| JP2008-078437 | 2008-03-25 | ||
| JP2008078437 | 2008-03-25 | ||
| JP2008314742 | 2008-12-10 | ||
| JP2008-314742 | 2008-12-10 | ||
| JP2008314742A JP5313647B2 (en) | 2008-03-25 | 2008-12-10 | Substrate processing apparatus and substrate processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101546696A true CN101546696A (en) | 2009-09-30 |
| CN101546696B CN101546696B (en) | 2011-04-13 |
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ID=41117895
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910127767XA Active CN101546696B (en) | 2008-03-25 | 2009-03-25 | Substrate processing apparatus and substrate processing method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8372299B2 (en) |
| JP (1) | JP5313647B2 (en) |
| KR (1) | KR101042805B1 (en) |
| CN (1) | CN101546696B (en) |
| TW (1) | TWI390623B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102403213A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Stack structure etching method for silicon, silicon oxide and silicon nitride |
| CN107871690A (en) * | 2016-09-23 | 2018-04-03 | 株式会社斯库林集团 | Substrate board treatment and substrate processing method using same |
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| JP5368116B2 (en) * | 2008-03-25 | 2013-12-18 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| JP2015070080A (en) * | 2013-09-27 | 2015-04-13 | 東京エレクトロン株式会社 | Etching method, etching device and storage medium |
| TW201713751A (en) * | 2015-10-06 | 2017-04-16 | 聯華電子股份有限公司 | Acid replenishing system and method for acid tank |
| US10832924B2 (en) | 2016-09-23 | 2020-11-10 | SCREEN Holdings Co., Ltd. | Substrate treating device and substrate treating method |
| JP7072453B2 (en) * | 2018-06-29 | 2022-05-20 | 東京エレクトロン株式会社 | Board processing equipment and board processing method |
| JP6516908B2 (en) * | 2018-07-03 | 2019-05-22 | 東京エレクトロン株式会社 | Etching processing control apparatus using phosphoric acid aqueous solution, etching processing control method using phosphoric acid aqueous solution, and computer readable storage medium storing program for etching substrate with phosphoric acid aqueous solution |
| JP7289639B2 (en) * | 2018-11-30 | 2023-06-12 | 株式会社Ｓｃｒｅｅｎホールディングス | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| JP7349876B2 (en) * | 2019-10-17 | 2023-09-25 | 東京エレクトロン株式会社 | Substrate processing equipment and equipment cleaning method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3625120B2 (en) * | 1997-03-19 | 2005-03-02 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| US6399517B2 (en) * | 1999-03-30 | 2002-06-04 | Tokyo Electron Limited | Etching method and etching apparatus |
| JP2004214243A (en) | 2002-12-27 | 2004-07-29 | Toshiba Corp | Method and device for etching semiconductor wafer |
| JP2006066727A (en) | 2004-08-27 | 2006-03-09 | Toshiba Corp | Semiconductor manufacturing device and chemical exchanging method |
| JP4891589B2 (en) | 2005-10-11 | 2012-03-07 | 東京エレクトロン株式会社 | Liquid processing apparatus, processing liquid supply method, and processing liquid supply program |
| JP4424517B2 (en) | 2007-02-19 | 2010-03-03 | セイコーエプソン株式会社 | PROCESSING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403213A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Stack structure etching method for silicon, silicon oxide and silicon nitride |
| CN107871690A (en) * | 2016-09-23 | 2018-04-03 | 株式会社斯库林集团 | Substrate board treatment and substrate processing method using same |
| CN107871690B (en) * | 2016-09-23 | 2021-12-24 | 株式会社斯库林集团 | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090102640A (en) | 2009-09-30 |
| CN101546696B (en) | 2011-04-13 |
| TW201005820A (en) | 2010-02-01 |
| KR101042805B1 (en) | 2011-06-20 |
| JP2009260245A (en) | 2009-11-05 |
| US20090246968A1 (en) | 2009-10-01 |
| TWI390623B (en) | 2013-03-21 |
| US8372299B2 (en) | 2013-02-12 |
| JP5313647B2 (en) | 2013-10-09 |
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