CN102403213A - Stack structure etching method for silicon, silicon oxide and silicon nitride - Google Patents
Stack structure etching method for silicon, silicon oxide and silicon nitride Download PDFInfo
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- CN102403213A CN102403213A CN2010102857849A CN201010285784A CN102403213A CN 102403213 A CN102403213 A CN 102403213A CN 2010102857849 A CN2010102857849 A CN 2010102857849A CN 201010285784 A CN201010285784 A CN 201010285784A CN 102403213 A CN102403213 A CN 102403213A
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Abstract
A stack structure etching method for silicon, silicon oxide and silicon nitride includes steps of providing an acid tank with etching solution capable of etching batched products in fixed standard, providing multiple batches of products for forming stack structures of silicon, silicon oxide and silicon nitride and providing numbers and parameters of each batch of products, judging each batch of products according to corresponding number and parameter of the products and performing acid etching for the products which are not beyond the etching capacity of the etching solution in the acid tank, and replacing the etching solution in the acid tank to perform acid etching for the products which are beyond the etching capacity of the etching solution in the acid tank. By means of advanced and optimized etching process, replacement of unconsumed etching solution in the acid tank is avoided, utilizing rate of the etching solution in the acid tank is increased, and production cost is reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly the stack architecture lithographic method of silicon, silica and silicon nitride.
Background technology
The stack architecture of silicon, silica and silicon nitride is widely used in field of manufacturing semiconductor devices; For example in shallow trench isolation technology (STI), adopt silicon, silica and silicon nitride stack architecture (be formed on the silicon substrate as the silicon oxide layer of spacer medium layer be formed on the silicon nitride layer on the silicon oxide layer as etching barrier layer) can improve shallow channel etching quality.But said structure can adopt wet etching to remove silicon nitride after forming device usually, specifically is to adopt temperature to be about 160 ℃ phosphoric acid (H
3PO
4) remove silicon nitride.
Phosphoric acid (H
3PO
4) reaction mechanism that removes silicon nitride is: Si
3N
4+ 4H
3PO
4+ 10H
2O → Si
3O
2(OH)
8+ 4NH
4H
2PO
4The Si in the product wherein
3O
2(OH)
8Form silica and water through dehydration and oxide precipitation, chemical equation is Si
3O
2(OH)
8→ 3SiO
2+ 4H
2O; NH in the product
4H
2PO
4Meeting NH
3Decompose, chemical equation is NH
4H
2PO
4→ NH
3+ H
3PO
4Can know that by above-mentioned mechanism in the reaction of removing silicon nitride, phosphoric acid can be considered to catalyst.But, when removing silicon nitride, phosphoric acid also can remove silica, and above-mentioned etching technics can receive the parameter influence of silicon concentration in phosphoric acid concentration and the etching solution; Please refer to Fig. 1; Fig. 1 is the etch rate of phosphoric acid etching liquid and the graph of a relation of the silicon concentration in the phosphoric acid etching liquid, can find out, silicone content is high in etching liquid; Etching liquid keeps stable to the etch rate of silicon nitride; But etching liquid is linear decline to the etch rate of silica, and the silicone content in the phosphoric acid etching liquid is greater than 100ppm, and etching liquid does not almost have etching effect to silica.It can also be seen that by last figure along with the silicone content in the phosphoric acid etching liquid increases, the particulate in the acid etch liquid also increases thereupon, the appearance of this phenomenon is because Si
3O
2(OH)
8Silicon dioxide and water that dehydration can produce, and silicon dioxide reaches capacity and can form deposition after the solubility, causes the particulate in the acid etch liquid to increase, and reduces the yield of semiconductor technology.
Can know by above-mentioned analysis; The control of silicon concentration is to keep fixing silicon nitride to the etching selection ratio of silica and keep fixedly silicon nitride and silica etch rate; And the key factor that improves the yield of semiconductor technology, existing employing wet method is removed nitride process and is normally adopted the acid tank that accommodates the phosphoric acid etching liquid to soak to remove, rule of thumb or the parameter of fixing product set and soak batch; And the product quantity of one batch of immersion of industry rule acquiescence is 50pcs usually; When carrying out etching technics, read this time etching batch, batch value of value that reads and setting is done comparison; When batch value of the value that reads, directly soak etching technics less than setting; When batch value of the value that reads, change the phosphoric acid etching liquid in the acid tank, and then soak etching technics greater than setting.
But; In the actual production process of semiconductor; The parameter of product for example thickness, the density of silicon nitride, the thickness of silica and the density of silica of silicon nitride can change along with the variation of technology, and every batch of product that soaks etching liquid might be less than 50pcs, and adopting existing wet method to remove nitride process can be because above-mentioned former thereby the phosphoric acid etching liquid occurs and can also use the phenomenon that but is replaced; Waste phosphoric acid etching liquid improves production cost.
Summary of the invention
The present invention provides the stack architecture lithographic method of a kind of silicon, silica and silicon nitride, avoids the etching liquid waste.
For addressing the above problem, the present invention provides the stack architecture lithographic method of a kind of silicon, silica and silicon nitride: an acid tank etching liquid is provided, and said acid tank etching liquid has etching fixed standard batch products ability; Multiple batches of formation silicon, silica and silicon nitride stack constructed products are provided, and the quantity and the parameter of every batch products are provided; According to the quantity and the parameter of every batch products, this batch products is judged, when this batch products is no more than acid tank etching liquid etching power, this batch products is carried out the acid tank etching; When this batch products surpasses acid tank etching liquid etching power, change the acid tank etching liquid, then this batch products is carried out the acid tank etching.
The present invention adopts advanced optimization etching technics, can avoid in the acid tank etching liquid not full consumption just be replaced, improve the etching liquid utilance in the acid tank, reduce production costs.
Description of drawings
Fig. 1 is the etch rate of phosphoric acid etching liquid and the graph of a relation of the silicon concentration in the phosphoric acid etching liquid;
Fig. 2 is the stack architecture lithographic method flow chart of silicon provided by the invention, silica and silicon nitride.
Embodiment
Existing employing wet method is removed nitride process and is normally adopted the acid tank that accommodates the phosphoric acid etching liquid to soak removal; Rule of thumb or the parameter of fixing product set and soak batch, and the product quantity of one batch of immersion of industry rule acquiescence usually is 50pcs, when carrying out etching technics; Read this time etching batch; Batch value of value that reads and setting is done comparison,, directly soak etching technics when batch value of the value that reads less than setting; When batch value of the value that reads, change the phosphoric acid etching liquid in the acid tank, and then soak etching technics greater than setting.
But above-mentioned technology can cause the waste of phosphoric acid etching liquid, in the production process of reality, owing to the restriction of product yield to be etched with from the consideration of increasing work efficiency; The product that is not each lot etched can both reach 50pcs; And for example silicon nitride thickness, silicon nitride density also can be variant for the product parameters of each etching, and when reaching batch value of setting, the phosphoric acid etching liquid in this acid tank maybe not need be changed but and is replaced; Cause waste, improve production cost.
The present invention provides the stack architecture lithographic method of a kind of silicon, silica and silicon nitride, with reference to figure 2, comprises the steps:
Step S101 provides an acid tank etching liquid, and said acid tank etching liquid has etching fixed standard batch products ability;
Step S102 provides multiple batches of formation silicon, silica and silicon nitride stack constructed products, and the quantity and the parameter of every batch products are provided;
Step S103 according to the quantity and the parameter of every batch products, judges this batch products, when this batch products is no more than acid tank etching liquid etching power, this batch products is carried out the acid tank etching; When this batch products surpasses acid tank etching liquid etching power, change the acid tank etching liquid, then this batch products is carried out the acid tank etching.
Be elaborated in the face of above-mentioned steps down.
At first, carry out step S101, an acid tank etching liquid is provided; Said etching liquid is the etching liquid of phosphoric acid; Wherein the mass concentration of phosphoric acid is 10% to 70%, and what need particularly point out is, can be according to the parameter of actual etching product; The thickness of silicon nitride etc. is for example selected the concentration of optimum etching liquid phosphoric acid.
Said acid tank can be known etching acid tank; Has the ability that a standard batch needs the etching product of holding; In the present embodiment, can hold 50 needs etching products with acid tank and do exemplary illustrated, at this moment; It is life-span counting * 50 of standard thickness * acid tank machine etching liquid that one standard batch needs the ability of etching product; Standard thickness is the maximum ga(u)ge of product to be etched, is example with silicon, silica and silicon nitride stack structure, and said standard thickness is the maximum ga(u)ge of silicon, silica and the silicon nitride stack structure of this batch.
Said acid tank can be bought or the customization acquisition to manufacturer, here repeats no more.
Capacity and acid tank etching liquid parameter according to acid tank; Allotment acid tank etching liquid; And setting acid tank etching liquid etching fixed standard batch value; Particularly, can set the product to be etched that etching liquid in this acid tank can what batches of etching, for example be set at every batch of etching 20 batches, 30 batches ... 50 batches for the product of 50pcs according to the parameter of etching liquid capacity and product to be etched in the concentration of the phosphoric acid of acid tank etching liquid, the acid tank.In the present embodiment; With every batch of etching is that the product of 50pcs is done exemplary illustrated for 50 batches; It is to be noted; Every batch of acquiescence batch quantity that 50pcs is a production of semiconductor products is continued to use this setting here, can set every batch product quantity according to actual needs in other embodiments.
Execution in step S102 provides multiple batches of formation silicon, silica and silicon nitride stack constructed products, and the quantity and the parameter of every batch products are provided.
Said silicon, silica and silicon nitride stack constructed products can cvd silicon oxide, silicon nitride obtain successively on the substrate of silicon chip through chemical vapor deposition method; Wherein silica can also obtain through the surface oxidation of method for oxidation with silicon chip, does not here give unnecessary details one by one.Need to prove that said silicon, silica and silicon nitride stack structure can also need be carried out the structure that forms behind photoetching, the etching technics to silica, the silicon nitride film that forms according to production.
After forming silicon, silica and silicon nitride stack constructed products; Adopt films test equipment; Silicon, silica and silicon nitride stack structure to forming are tested; Obtain each product thin film data, data such as silicon nitride thickness, silicon nitride density, silicon oxide thickness, silica density for example, and with the storage that obtains in storage medium.
Need to prove, in production of semiconductor products, can be that unit produces with FOUP usually, and 1 FOUP can hold 25 flake products, produced 2 FOUP totally 50 flake products be one batch.And continual production is until reaching the output requirement.But in process of production,, can reject undesirable product owing to reasons such as yields, thus make one batch can be not enough 50.Inventor of the present invention also considers because the difference in the semiconductor production process, and the parameters such as film thickness of every flake products of same batch also can be variant, existing lithographic technique machinery choose a reference thin film thickness, thereby can cause the etching liquid waste.
For this reason, inventor of the present invention provides a kind of etching technics of optimization, and S103 is said like step; Quantity and parameter according to every batch products; This batch products is judged,, this batch products is carried out the acid tank etching when this batch products is no more than acid tank etching liquid etching power; When this batch products surpasses acid tank etching liquid etching power, change the acid tank etching liquid, then this batch products is carried out the acid tank etching.
Particularly; Product with the 50pcs of standard thickness is done exemplary illustrated for 50 batches; When [the 1st batch products thickness+the 2nd batch products thickness+...+the n batch products thickness]＜life-span of standard thickness * acid tank machine etching liquid counting * 50 o'clock, continue etching next batch product.
When [the 1st batch products thickness+the 2nd batch products thickness+...+the n batch products thickness] >=life-span of standard thickness * acid tank machine etching liquid counting * 50 o'clock, the etching liquid with changing in the acid tank carries out the acid tank etching to this batch products then.
Need to prove that also in the present embodiment, etching fixed standard batch products ability is set at life-span counting item * 50 of standard thickness * acid tank machine etching liquid; In other embodiments; Can be as required; Set etching fixed standard batch products ability; For example etching fixed standard batch products ability is set at life-span counting item * 20 of standard thickness * acid tank machine etching liquid, life-span counting item * 40 of standard thickness * acid tank machine etching liquid, the life-span counting item * m (m is the quantity of acid tank machine etching liquid etching standard thickness) of life-span counting item * 60... standard thickness * acid tank machine etching liquid of standard thickness * acid tank machine etching liquid.
The present invention adopts advanced optimization etching technics, can avoid in the acid tank etching liquid not full consumption just be replaced, improve the etching liquid utilance in the acid tank, reduce production costs.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (5)
1. the stack architecture lithographic method of a silicon, silica and silicon nitride is characterized in that, comprising:
One acid tank etching liquid is provided, and said acid tank etching liquid has etching fixed standard batch products ability;
Provide n batch be formed with silicon, silica and silicon nitride stack constructed products, and the quantity and the parameter of every batch products are provided;
According to the quantity and the parameter of every batch products, this batch products is judged, when this batch products is no more than acid tank etching liquid etching power, this batch products is carried out the acid tank etching; When this batch products surpasses acid tank etching liquid etching power, change the acid tank etching liquid, then this batch products is carried out the acid tank etching.
2. lithographic method as claimed in claim 1 is characterized in that, said acid tank etching liquid has etching fixed standard batch products ability and is: the quantity of the life-span counting item * acid tank machine etching liquid etching standard thickness of standard thickness * acid tank machine etching liquid.
3. lithographic method as claimed in claim 1 is characterized in that, according to the quantity and the parameter of every batch products, this batch products is judged, when this batch products is no more than acid tank etching liquid etching power, this batch products is carried out the acid tank etching; When this batch products surpasses acid tank etching liquid etching power, change the acid tank etching liquid, then this batch products is carried out the acid tank etching and be:
When [the 1st batch products thickness+the 2nd batch products thickness+...+the n batch products thickness]＜during the quantity of life-span of standard thickness * acid tank machine etching liquid counting item * acid tank machine etching liquid etching standard thickness, continuation etching next batch product;
When [the 1st batch products thickness+the 2nd batch products thickness+...+the n batch products thickness] >=during the quantity of life-span of standard thickness * acid tank machine etching liquid counting item * acid tank machine etching liquid etching standard thickness; Etching liquid with changing in the acid tank carries out the acid tank etching to this batch products then.
4. lithographic method as claimed in claim 1 is characterized in that, said etching liquid is the etching liquid of phosphoric acid.
5. lithographic method as claimed in claim 3 is characterized in that, the concentration of the etching liquid of said phosphoric acid is the mass concentration 10% to 70% of phosphoric acid.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441089A (en) * | 2013-08-02 | 2013-12-11 | 上海华力微电子有限公司 | Control method of wet etching process |
| CN105390391A (en) * | 2015-10-29 | 2016-03-09 | 上海华力微电子有限公司 | Control method of H3PO4 groove small acid change |
| CN112331562A (en) * | 2020-10-26 | 2021-02-05 | 北京北方华创微电子装备有限公司 | Silicon nitride film etching method |
| CN114249477A (en) * | 2021-11-15 | 2022-03-29 | 中国科学院上海微系统与信息技术研究所 | Regeneration method of nitride film etching liquid and etching method of nitride film |
| CN115494887A (en) * | 2022-11-16 | 2022-12-20 | 合肥新晶集成电路有限公司 | Etching liquid replenishing method and device and etching equipment |
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| US20060137712A1 (en) * | 2004-12-27 | 2006-06-29 | Yukihisa Wada | Cleaning apparatus and method for electronic device |
| CN101404303A (en) * | 2008-09-09 | 2009-04-08 | 上海拓引数码技术有限公司 | Wet-method etching device for oxide film |
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| JP2001023952A (en) * | 1999-03-30 | 2001-01-26 | Tokyo Electron Ltd | Etching method and device |
| US20060137712A1 (en) * | 2004-12-27 | 2006-06-29 | Yukihisa Wada | Cleaning apparatus and method for electronic device |
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Cited By (8)
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| CN103441089A (en) * | 2013-08-02 | 2013-12-11 | 上海华力微电子有限公司 | Control method of wet etching process |
| CN105390391A (en) * | 2015-10-29 | 2016-03-09 | 上海华力微电子有限公司 | Control method of H3PO4 groove small acid change |
| CN105390391B (en) * | 2015-10-29 | 2018-04-03 | 上海华力微电子有限公司 | A kind of small control method for changing acid of H3PO4 grooves |
| CN112331562A (en) * | 2020-10-26 | 2021-02-05 | 北京北方华创微电子装备有限公司 | Silicon nitride film etching method |
| CN112331562B (en) * | 2020-10-26 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Silicon nitride film etching method |
| CN114249477A (en) * | 2021-11-15 | 2022-03-29 | 中国科学院上海微系统与信息技术研究所 | Regeneration method of nitride film etching liquid and etching method of nitride film |
| CN115494887A (en) * | 2022-11-16 | 2022-12-20 | 合肥新晶集成电路有限公司 | Etching liquid replenishing method and device and etching equipment |
| CN115494887B (en) * | 2022-11-16 | 2023-02-17 | 合肥新晶集成电路有限公司 | Etching liquid supplementing method, etching liquid supplementing device and etching equipment |
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