CN101523599A - 光模块封装 - Google Patents

光模块封装 Download PDF

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CN101523599A
CN101523599A CNA2007800370859A CN200780037085A CN101523599A CN 101523599 A CN101523599 A CN 101523599A CN A2007800370859 A CNA2007800370859 A CN A2007800370859A CN 200780037085 A CN200780037085 A CN 200780037085A CN 101523599 A CN101523599 A CN 101523599A
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light
ceramic layer
module package
optical sensor
light module
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CN101523599B (zh
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B·阿克曼
H·-H·贝克特尔
A·希尔格斯
M·温特
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Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
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    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02322Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/355Non-linear optics characterised by the materials used
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

本发明涉及用于安装和电接触至少一个发光二极管(20)的安装基板(10),在由发光二极管所发射的光的路径中设置陶瓷层(40),其中,陶瓷层(40)包含波长转换材料,发光二极管(20)设置在陶瓷层(40)和安装基板(10)之间,光传感器(30)设置在安装基板(10)处,用于检测发光二极管(20)的光输出,以便于控制离开光模块(1)的光的亮度和/或颜色,其中,陶瓷层(40)仅仅部分半透明,以防护光传感器(30)免受环境光。

Description

光模块封装
技术领域
本发明涉及具有安装在基板和一个层上的发光二极管的光模块封装,所述的层转换发光二极管发射的光,其中,离开光模块封装的光的亮度和/或颜色是受控的。
背景技术
感知发光二极管(LED)处的温度或者感知LED处的光输出,以及利用所感知温度或者所感知光输出作为电源反馈是已知的。控制器通常与这些光模块封装一起使用,用于至少“打开”和“关闭”LED。LED的光输出和/或颜色还可以由控制器可调节控制。这要求使用光或者光学传感器,用于感知光器件的流明输出和/或颜色(波长),且将该信息提供给控制器。在上述光模块封装中,与感知LED处的温度相比,感知LED的光输出可以提供益处。特别地,感知LED的光输出允许补偿LED光输出的温度诱导和年龄诱导退化。这种光器件在US 6,617,795 B2中进行了描述。光模块封装包括安装两个或者多个LED的支撑构件,用于向封装外部控制器报告定量和光谱信息的至少一个反馈传感器,以及用于为控制器进行数字处理而准备由一个或者多个传感器所产生的信号的信号处理电路。无源光学系统安装在支撑构件12上的LED、传感器和数字处理电路上方,用于光学操纵由封装所产生的光。不利的是,测量LED光输出被照到光传感器上的环境光干扰。为了精确检测LED的光输出,所有其他外部散射光源(即,太阳光)必须忽略。
EP 1 067 824 A2公开了:LED和环境光在光传感器信号上的影响可以通过调制LED光和适当地使调制图案和传感器信号相关联来分离。然而,这涉及复杂的驱动和控制方案。随着LED或者LED串数量的增加,其亮度不得不受控制,所遇到的复杂性增加,这是因为来自一个LED(串)的光不得不与环境光以及来自邻近LED或者LED串的光分离。在US 2005/133686 A1中,提出了单独地测量单个LED的亮度。然而,使用复杂的构造便于将每个单LED的光引向其关联的光传感器。
发明内容
为了其目的,本发明不得不改善以上所提到的光模块封装。特别地,本发明的目的是提供一种具有简单配置的光模块封装,其中,可以施加稳定的通量来控制所发射光的亮度和/或颜色,和/或他们的空间分布。
该目的由如本发明权利要求1所教导的光模块封装来实现。本发明封装的有益实施例在从属权利要求中限定。
因此,光模块封装设置有用于安装和电接触至少一个发光二极管的安装基板,设置在由发光二极管所发射的光的路径中的陶瓷层,其中,陶瓷层包含波长转换材料,发光二极管设置在陶瓷层和安装基板之间,且光传感器设置在安装基板处,检测发光二极管的光输出,便于控制离开光模块的光的亮度和/或颜色,其中,陶瓷层仅仅部分半透明,以防护光传感器免受环境光。
本发明的一个基本想法是基于如下事实:陶瓷层设置在光模块封装中,将由LED所发射的初级光转换成离开所述光模块封装的次级光。有益的,陶瓷层由诸如磷光体的波长转换材料组成,或者包括诸如磷光体的波长转换材料。根据本发明的荧光陶瓷层比现有技术的磷光体层更耐用,且对温度更不敏感。为了精确地检测LED的光输出,陶瓷层仅仅部分半透明,以防护光传感器免受环境光。在驱动光模块封装的过程中,荧光陶瓷层作为“有源光源”,光从所述荧光陶瓷层离开光模块封装。虽然陶瓷层将LED所发射的光转换成具有不同波长的次级光,但是环境光基本上不影响光传感器的测量。优选的,可以由校准来补偿光模块封装所产生光亮度的制造范围的影响,随着老化和温度变化的亮度变化,通过使用检测光输出的反馈控制来补偿。光传感器向电源提供反馈信号,以便电源可以控制提供给LED的电流。有益的,光传感器集成在光模块封装中,其中,按照该方式,可以获得具有优化形式因素(薄、扁平)的封装。
优选的,光传感器的敏感区域直接面向陶瓷层。因而,光传感器检测陶瓷层的转换光。
根据本发明的优选实施例,陶瓷层和光传感器非常薄。光传感器可以设置在安装基板和陶瓷层之间。可替换的,光传感器可以集成到安装基板中。
在另一个实施例中,还可能的是:陶瓷层包含朝向光传感器的光导。在这样情况下,光导将理想量的光输出从陶瓷层传送到光传感器,所述传感器例如嵌入基板中。所述光导可能是陶瓷层的一部分。有益的,光导是鼻形的,其中,光导的末端距离光传感器一段距离。可替换的,光导延伸到光传感器,其中,光导的末端接触光传感器的顶面。
在另一个优选实施例中,光导可以由与陶瓷层不同的材料制成,其中,所述光导位于陶瓷层和光传感器之间。
另外,如果需要,反射层可以设置在陶瓷层处,提供免受环境光的另外防护,以便于大体上保证由光传感器所检测的光输出不受外部光源影响。
作为反馈传感器工作的光传感器可以包含一个或者多个光学传感器,一个或者多个温度(热敏)传感器,优选的,至少一个光学传感器和至少一个温度(热敏)传感器的组合。光学传感器可以包含诸如光电二极管等的传统光电传感器。光学传感器以定量(光强)和/或光谱(波长)方式向外部控制器报告LED的光输出。
另外,温度传感器设置在安装基板处,测量LED和/或光传感器的温度。温度传感器可以包含半导体二极管结,带隙基准电路或者用在集成电路技术中的任何其他热敏感应元件。热敏传感器通过测量安装基板的温度向外部控制器报告LED的定量和光谱输出,而所述定量和光谱输出也可能与LED的运行温度相关。温度传感器和光传感器向电源提供反馈信号,所述电源可以驱动单个LED模块具有稳定的通量、预定的亮度和/或颜色。
在本发明的优选实施例中,光传感器设置邻近于陶瓷层。按照这种方式,由于与外部光相比,光学耦合传感器对于陶瓷层中所产生光的大受光角,增强了光传感器的信号对比度(signal contrast)。同样,来自邻近LED的光可以被有效屏蔽。因而,光传感器检测该LED的光输出,其中,光传感器的测量不会受到邻近LED的输出影响。有益地,LED与AC或者DC驱动电路连接。
荧光陶瓷层可以通过利用例如诸如环氧树脂或者硅树脂等已知有机粘合剂薄层的波动焊接(waver bonding)、烧结、胶合,利用高系数无机粘合剂的胶合,以及利用有机改性钛凝胶的胶合来固定到LED、光传感器、安装基板上。荧光陶瓷层有能力将陶瓷层铸造、研磨、机加工、热印或者磨光成所希望的例如增加光提取的形状。
另外,像透镜、光纤等的光学元件可以布置在光模块封装上。优选的,陶瓷层表面包含透镜、半球形透镜、菲涅耳透镜,或者陶瓷层表面是有构造的。由于光源的亮度变化,使用一个以上光模块封装的LED器件可能呈现所发射光的非理想亮度变化。具有稳定通量的LED模块可以用来抑制所发射光的上述亮度变化。在最初的校准中,确定单个光源(相对)亮度值,其导致所发射光最佳可能均匀亮度分布。随后,具有稳定通量的每个光模块封装控制其亮度到理想值,甚至与由于老化和温度而引起的变化相反。类似地,可以以简单的前馈方式,仅仅通过支配每个光模块封装到在最初校准过程中将产生的已经确定的亮度(通量)来控制(包含具有稳定通量和不同原色的光模块封装的)LED源的颜色和亮度。同样,对于使用例如多个LED来形成一种颜色光的较大颜色可变LED器件,由整个LED器件所发射光的亮度/颜色变化可以通过使用具有稳定通量的光模块封装和驱动单个光模块封装到预定亮度/通量条件来抑制。
具有稳定通量的本发明光模块封装可以应用到LED照明应用中,其中,所发射光的亮度和颜色和/或他们的光谱分布将是受控的。
根据本发明的光模块封装可以用在多种系统中,其中,所述系统是家用系统、LCD背光系统、投影系统(LED卷轴机)、汽车照明(例如,头灯)、商店照明系统、家庭照明系统、重点照明系统、聚光灯照明系统、纤维光学应用系统、投影系统、自点亮显示系统、分段显示系统、警告标志系统、医用照明应用系统、移动电话显示系统、显示标志系统、装饰照明系统或者柔性环境(例如,纺织品和其他衣服)中的电子系统。
上述部件、以及根据权利要求的部件和根据本发明在所描述实施例中使用的部件相对于他们的尺寸、形状、材料选择和技术概念不具有任何特别的例外,因而选择相关领域中的已知标准可以被利用而非限制。
在从属权利要求中公开了本发明目的的另外详细说明、特征和优点,各个附图的以下描述(以示例的方式)示出了根据本发明的光模块封装的优选实施例。
附图说明
图1示出了根据本发明第一实施例的光模块封装的示意性视图,
图2示出了根据本发明第二实施例的光模块封装的示意性视图,
图3示出了根据本发明第三实施例的光模块封装的示意性视图,
图4示出了根据本发明第四实施例的光模块封装的示意性视图,以及
图5示出了根据本发明第五实施例的光模块封装的示意性视图。
具体实施方式
图1示出了光模块封装1,其具有安装基板10和荧光陶瓷层40,其中,LED20设置在两个所述层之间。光传感器30放置在邻近于LED 20,且在安装基板10和陶瓷层40之间,以便于检测发光二极管20的光输出。陶瓷层40仅仅部分半透明(translucent),以防护光传感器30免受环境光。在本发明所示的实施例中,陶瓷层40包含磷光颗粒的刚性块。在驱动光模块封装1的过程中,LED 20发射朝向陶瓷层40的初级光。在陶瓷层40中,初级光转换成具有不同波长的次级光,所述次级光离开光模块封装1。光传感器30的敏感区域直接面向陶瓷层40,以便于测量发光二极管20的光输出。光传感器30可以主要直接接收一部分由LED 20所发射的光,或者其可以主要接收由荧光陶瓷40所转换的光,或者其可以接收两者的组合。这可以通过在朝向荧光陶瓷40的其分界面处将合适的过滤层加到光传感器30的顶部来控制。光传感器30向未示出的电源提供反馈信号,所述电源可以驱动LED 20具有稳定通量和预定亮度和/或颜色。
另外,光模块封装1可以包含温度传感器50,所述温度传感器50设置在陶瓷层40和安装基板10之间,与发光二极管20邻近,用于测量发光二极管20的温度。像光传感器30一样,温度传感器50向电源提供反馈信号,以便于控制LED 20的驱动。另外,温度传感器50可以测量光传感器30的温度。在这样情况下,温度传感器50可以放置在光传感器30和LED 20之间,这没有明确地示出。
陶瓷层40可以包含具有彼此固定的至少两个单独的陶瓷层的多层结构,所述陶瓷层40形成有顶面42和底面43,其中,底面43朝向基板10。
图2示出了发明的另一个实施例,其中,光传感器30集成到安装基板10中。陶瓷层40包含鼻形(nose-shape)光导41,其中,光导41的末端距离光传感器30一段距离。光导41支持由陶瓷层40所转换的理想量光向光传感器30传送。在该实施例中,陶瓷层40和光导41是一个均匀块。
在本发明的另一个实施例中,光导41可以由与陶瓷层40不同的材料制成,这在图3中示出。光导41延伸到光传感器30,接触光传感器30的敏感区域。
根据图4,荧光陶瓷40由反射层60在顶面42上部分覆盖。反射层60是在陶瓷层40上喷涂金属的金属层。放置在光传感器30上方的反射层60提供了对于环境光的附加防护。
图5示出了本发明光模块封装的进一步可能性,其中,光传感器30设置邻近于陶瓷层40。在这样情况下,光传感器30的敏感区域在其右侧,朝向陶瓷层40。光传感器30用作LED的附加防护,可以设置邻近于光模块封装1,这在实施例中没有示出。
附图标记列表
1  光模块封装
10 安装基板
20 发光二极管
30 光传感器
40 陶瓷层
41 光导
42 陶瓷层顶面
43 陶瓷层底面
50 温度传感器
60 反射层

Claims (12)

1.一种光模块封装(1),其包含:
安装基板,其用于安装和电接触至少一个发光二极管(20),
陶瓷层(40),其设置在由发光二极管(20)所发射的光的路径中,其中,所述陶瓷层(40)包含波长转换材料,
发光二极管(20),其设置在所述陶瓷层(40)和安装基板(10)之间,
光传感器(30),其设置在所述安装基板(10)处,用于检测发光二极管(20)的光输出,以便于控制离开光模块(1)的光的亮度和/或颜色,其中,
所述陶瓷层(40)仅仅部分半透明,以防护所述光传感器(30)免受环境光。
2.如权利要求1所述的光模块封装(1),其特征在于,所述光传感器(30)集成到所述安装基板(10)中。
3.如权利要求1或2所述的光模块封装(1),其特征在于,所述陶瓷层(40)包含朝向光传感器(30)的光导(41)。
4.如权利要求3所述的光模块封装(1),其特征在于,所述光导(41)是鼻形的,其中光导(41)的末端距离光传感器(30)一段距离。
5.如权利要求3所述的光模块封装(1),其特征在于,所述光导(41)延伸到所述光传感器(30)。
6.如上述权利要求中任一所述的光模块封装(1),其特征在于,反射层(60)设置在陶瓷层(40)处,用于提供对于环境光的另外防护。
7.如权利要求6所述的光模块封装(1),其特征在于,所述陶瓷层(40)形成有顶面(42)和底面(43),其中,底面(43)朝向安装基板(10),其中反射层(60)设置在顶面(42)上。
8.如上述权利要求中任一所述的光模块封装(1),其特征在于,温度传感器(50)设置在安装基板(10)处,用于测量发光二极管(20)和/或光传感器(30)的温度。
9.如上述权利要求中任一所述的光模块封装(1),其特征在于,所述陶瓷层(40)包含磷光颗粒的刚性块。
10.如上述权利要求中任一所述的光模块封装(1),其特征在于,所述陶瓷层(40)包含具有彼此附着的至少两个单独的陶瓷层的多层结构。
11.如上述权利要求中任一所述的光模块封装(1),其特征在于,所述光传感器(30)的敏感区域直接面向陶瓷层(40)。
12.如上述权利要求中任一所述的光模块封装(1),其特征在于,所述光传感器(30)设置成邻近于所述陶瓷层(40)。
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