CN101523562A - Step chemical mechanical polishing method - Google Patents
Step chemical mechanical polishing method Download PDFInfo
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- CN101523562A CN101523562A CNA2007800374633A CN200780037463A CN101523562A CN 101523562 A CN101523562 A CN 101523562A CN A2007800374633 A CNA2007800374633 A CN A2007800374633A CN 200780037463 A CN200780037463 A CN 200780037463A CN 101523562 A CN101523562 A CN 101523562A
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- Prior art keywords
- polishing
- chemical mechanical
- mechanical polishing
- polysilicon
- polishing method
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- 238000005498 polishing Methods 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000126 substance Substances 0.000 title claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 claims abstract description 30
- 239000007800 oxidant agent Substances 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims description 25
- 230000001590 oxidative effect Effects 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000006061 abrasive grain Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 230000003750 conditioning effect Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 150000002978 peroxides Chemical class 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000007517 polishing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N Methyl ethyl ketone Natural products CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229920006318 anionic polymer Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a substep chemical-mechanical polishing method. The invention has the concrete steps that: first step, a chemical-mechanical polishing solution with polysilicon removal rate larger or equal to 200A/min is used to eliminate most of the polysilicon but not expose surfaces of polysilicon; second step, and the surfaces of the polysilicon and subsequently exposed surfaces of polysilicon and silicon dioxide are polished after the oxidizer is added into the polishing solution. The method can avoid a phialiform dent defect on the surface, cause the flatness of wafers to heighten, and increase the cleanness of the wafers and a polishing pad simultaneously to cause the technology more stable.
Description
Step chemical mechanical polishing method technical field
The present invention relates to a kind of step chemical mechanical polishing method.Technical background
In the polishing process of polysilicon, following problem usually there will be：Because polishing speed selection ratio（Polycrystalline silicon/silicon dioxide）It is too high so that last polishing process stop at silicon dioxide layer ± when, the dish-shaped recessed damage of polysilicon is had unavoidably.As shown in figure 1, a, b are respectively the structure before polishing and after polishing in figure.And the problem can be aggravated with the increase of the groove width between silica.This can cause to have a strong impact on to the performance of device.
Therefore, surface dish-shaped recessed damage defect and removal problem are most important during solving polishing polycrystalline silicon.Patent document US2003153189 discloses a kind of method of chemically mechanical polishing and the composition of polishing fluid, and the dish-shaped recessed damage of the polysilicon in oxide channel, and reduction production cost are reduced by adding a kind of anionic polymer.Patent document US6191039 discloses a kind of two steps cmp method, by the pH value for controlling the first step and second step（9.5〜10.5；10.2- 10.35) polishing method, can reduction polishing time and cost, and have preferable flattening effect.Brief summary of the invention
The invention aims to solve in the polishing process of polysilicon, because polishing speed selection is than (polycrystalline silicon/silicon dioxide）It is too high, during so that last polishing process is stopped in silicon dioxide layer, the problem of there is surface dish recessed damage, the recessed damage ratio of defects of surface dish can be reduced by providing one kind, increase chip flatness, and the cleannes on chip and polishing pad can be increased simultaneously, throw the more stable chemical machinery of technique
Light method.
The above-mentioned purpose of the present invention is realized by following technical proposal：First step, most polysilicon but not exposed polysilicon surface are removed using the Chemical Mechanical Polishing liquid for being more than or equal to 200 A/min with polysilicon removal rate；Second step, is added after oxidant in the polishing fluid, and the polysilicon to polysilicon surface and being then exposed is polished with silica surface.
In the present invention, the polysilicon removal rate of the first step is set to be more than or equal to the known technology that 200 A/min belong to those skilled in the art.
In the method for the present invention, the polishing speed possible range of first step polysilicon is 200 ~ 10000A/min;The polishing speed of second step, polysilicon and silica is 10 than possible range:1 and 1:Between 1, optimum range is 5:1 and 1:Between 1.
In the present invention, the end of the first step can be by limiting time, or controls by terminal point control system to terminate.
In the present invention, described polishing fluid can include at least one abrasive grains and water.Described abrasive grains may be selected from one or more of following seven kinds：Silica, alundum (Al2O3), ceria, zirconium dioxide, carborundum, polytetrafluoroethylene (PTFE)（PTFE).The content of described abrasive grains is preferably that percentage by weight is less than or equal to 30%.
In the present invention, described Throwing light liquid can also include other additives of the prior art, such as ρ Η conditioning agents, complexing agent and/or polysilicon removal rate conditioning agent. '
In the present invention, described oxidant can be containing thiooxidant, agent containing iodine oxidation, brominated oxidant, oxidizer containing chlorine, hydrogen peroxide, Peracetic acid or other peroxide etc..The addition of described oxidant is preferably percentage by weight 0.1 30%.
The positive effect of the present invention is：The recessed damage defect of surface dish can be avoided, makes chip flatness
Increase, and the cleannes on chip and polishing pad can be increased simultaneously, make technique more stable.Polishing effect of the present invention is as shown in Fig. 2 a, b are respectively the structure before polishing and after polishing in figure.Its effect will be further illustrated by embodiment.' brief description of the drawings
Fig. 1 be conventional polysilicon polishing process in, before polishing（A) and after polishing（B) structure.Fig. 2 is to carry out polishing polycrystalline silicon using the inventive method, before polishing（A) and after polishing（B) structure.The content of the invention
The present invention is further illustrated below by the mode of embodiment, is not therefore limited the present invention among described scope of embodiments.The step chemical mechanical polishing method of-- embodiment 1
Polishing fluid： 0.1wt.%Al2O3, pH adjusting agent is KOH, and water is surplus, pH=ll oxidants：AMMONIUM PER SULFATE A12(S208)3
1. polishing fluid is dripped on PPG CSYMXP -710 polishing pads, front wafer surface downwards, contacts pad interface, and rotating polishing discs and rubbing head are distinguished with 70 rpm and 80rpm rotating speed, apply 1 psi lower pressure in the chip back surface being polished simultaneously, be polished.Polysilicon removal rate is： 200 A/min.Polishing flow velocity is 100ml/min, limiting time 2 minutes.
2. 0. lwt.% A1 are added in Throwing light liquid2(S208)3, it is polished afterwards, the same first step of polishing condition.The step chemical mechanical polishing method of embodiment 2
Polishing fluid： 30 wt.% CeO2, 1.0 wt %EDTA, water is surplus, pH=10.
Oxidant： KI03
1. polishing fluid is dripped on PPGCSYMXP-710 polishing pads, front wafer surface downwards, contacts pad interface, and Throwing CDs and Throwing shaven heads are rotated respectively with 70 rpm and 80rpm rotating speed, applied 3 psi lower pressure by the chip back surface of Throwing light simultaneously, carry out Throwing light.Polysilicon removal rate is： 900 A/min.Polishing flow velocity is 100ml/min, limiting time 2 minutes.
2. add 10wt.%KIO in Throwing light liquid3, it is polished afterwards, the same first step of polishing condition.The step chemical of embodiment 3 machinery Throwing light methods
Polishing fluid： 10wt.%ZrO2, 0.1 wt.% polysorbate40s, water is surplus, pH=ll oxidants： KBr03
1. polishing fluid is dripped on PPGCSYMXP-710 polishing pads, downwards, rotating polishing discs and rubbing head are distinguished in contact Throwing light pads surface to front wafer surface with 70 rpm and 80rpm rotating speed, apply 5 psi lower pressure in the chip back surface being polished simultaneously, be polished.Polysilicon removal rate is -5000A/min.Polishing flow velocity is 100ml/min, limiting time 2 minutes.
2. 15wt.%KBr0 is added in polishing fluid3, it is polished afterwards, the same first step of polishing condition.The step chemical mechanical polishing method of embodiment 4
Polishing fluid：10wt.%SiC, water is surplus, pH=ll
Oxidant： KC104
1. polishing fluid is dripped on PPGCSYMXP-710 polishing pads, front wafer surface downwards, contacts pad interface, and rotating polishing discs and rubbing head are distinguished with 100 rpm and 97 rpm rotating speed, apply 5 psi lower pressure in the chip back surface being polished simultaneously, be polished.Polysilicon removal rate is -8000A/min.Polishing flow velocity is 100ml/min, limiting time 2 minutes.
2. 20wt.%KClO is added in polishing fluid4, it is polished afterwards, the same first step of polishing condition.
The step chemical mechanical polishing method of embodiment 5
Polishing fluid：10wt.% polytetrafluoroethylene (PTFE)（PTFE), water is surplus, pH=ll
Oxidant：Peracetic acid
1. polishing fluid is dripped on PPGCSYMXP-710 polishing pads, front wafer surface downwards, contacts pad interface, and rotating polishing discs and rubbing head are distinguished with 70rpm and 80rpm rotating speed, apply 3 psi lower pressure in the chip back surface being polished simultaneously, be polished.Polysilicon removal rate is： 2000A/min.Polishing flow velocity is 100ml/min, limiting time 2 minutes.
2. adding 30wt.% Peracetic acid in polishing fluid, Throwing light, the same first step of polishing condition are carried out afterwards.The step chemical mechanical polishing method of embodiment 6
Polishing fluid：10wt.% polystyrene, water is surplus, pH=ll
Oxidant：Methyl ethyl ketone peroxide
1. polishing fluid is dripped on PPGCSYMXP-710 polishing pads, front wafer surface downwards, contacts pad interface, rotating polishing discs and rubbing head are distinguished with 70rpm and 80rpm rotating speed, simultaneously by Throwing light chip back surface apply 3 psi, lower pressure, be polished.- polysilicon removal rate is： 2600A/min.Polishing flow velocity is 100ml/min, limiting time 2 minutes.
2. adding 15 % methyl ethyl ketone peroxides in polishing fluid, it is polished afterwards, the same first step of polishing condition.
The step chemical mechanical polishing method of effect example 1
Polishing fluid： 10wt%SiO2, water is surplus, pH=ll.
Oxidant：Hydrogen peroxide.
1. polishing fluid is dripped on PPGCSYMXP-710 polishing pads, front wafer surface downwards, contacts pad interface, rotating polishing discs and rubbing head is distinguished with 70rpm and 80rpm rotating speed, while being thrown
The chip back surface of light applies 3 psi lower pressure, is polished.' polysilicon removal rate is：2500 A/min o polishing flow velocities are 100ml/min.
2. adding 15wt.% oxygen water in polishing fluid, it is polished afterwards, the same first step of polishing condition.
Throwing light result as shown in table 1-crystal silicon, silica removal rate and its selection ratio
As seen from the above table, compared with first step, second step is added after oxidant, and polysilicon removal rate is significantly reduced, and silica removal rate is constant so that polycrystalline silicon/silicon dioxide removal rate selects ratio from 8. 3:1 is reduced to .3:1, so as to avoid because the selection of polycrystalline silicon/silicon dioxide Throwing optical speeds is than too high so that last polishing process stops at the dish-shaped recessed damage that polysilicon is produced when in silicon dioxide layer.
Claims (1)
- Claim1., a kind of step chemical mechanical polishing method, it is characterised in that：First step is polished with the chemical mechanical polishing liquid for being more than or equal to 200 A/min with polysilicon removal rate, and second step adds oxidant in the polishing fluid and is polished.2. step chemical mechanical polishing method according to claim 1, it is characterised in that：Described polishing fluid includes at least one abrasive grains and water. -3. step chemical mechanical polishing method according to claim 2, it is characterised in that：Described abrasive grains are selected from one or more of following seven kinds：Silica, alundum (Al2O3), ceria, zirconium dioxide, carborundum, polytetrafluoroethylene (PTFE) and polystyrene.4. step chemical mechanical polishing method according to claim 2, it is characterised in that：The content of described abrasive grains is weight percentage less than or equal to 30%.5. step chemical mechanical polishing method according to claim 2, it is characterised in that：Described polishing fluid also includes pH adjusting agent, complexing agent and/or polysilicon removal rate conditioning agent.6. step chemical mechanical polishing method according to claim 1, it is characterised in that：Described oxidant is containing thiooxidant, agent containing iodine oxidation, brominated oxidant, oxidizer containing chlorine, hydrogen peroxide, Peracetic acid or other peroxide.7. step chemical mechanical polishing method according to claim 1, it is characterised in that：Described oxidation
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007800374633A CN101523562B (en) | 2006-11-17 | 2007-11-12 | Step chemical mechanical polishing method |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101184633A CN101188197A (en) | 2006-11-17 | 2006-11-17 | Step chemical mechanical polishing method |
| CN200610118463.3 | 2006-11-17 | ||
| CN2007800374633A CN101523562B (en) | 2006-11-17 | 2007-11-12 | Step chemical mechanical polishing method |
| PCT/CN2007/003196 WO2008058458A1 (en) | 2006-11-17 | 2007-11-12 | Multiplestep cmp method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101523562A true CN101523562A (en) | 2009-09-02 |
| CN101523562B CN101523562B (en) | 2012-09-19 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101184633A Pending CN101188197A (en) | 2006-11-17 | 2006-11-17 | Step chemical mechanical polishing method |
| CN2007800374633A Expired - Fee Related CN101523562B (en) | 2006-11-17 | 2007-11-12 | Step chemical mechanical polishing method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101184633A Pending CN101188197A (en) | 2006-11-17 | 2006-11-17 | Step chemical mechanical polishing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101188197A (en) |
| WO (1) | WO2008058458A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906269A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Slurry for metal chemical and mechanical polishing and using method thereof |
| CN101992422B (en) * | 2009-08-25 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Process control method and system of copper chemical mechanical polishing |
| CN102148130B (en) * | 2010-02-09 | 2012-11-07 | 上海华虹Nec电子有限公司 | Method for improving control capability of surface photoetching process sensitive to external environment |
| CN105538047B (en) * | 2015-12-11 | 2017-09-22 | 中国航空工业集团公司北京航空材料研究院 | A kind of surface polishing method of the organic transparent products of aviation |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW358983B (en) * | 1997-11-15 | 1999-05-21 | Taiwan Semiconductor Mfg Co Ltd | Chemical mechanical grinding method |
| US6117748A (en) * | 1998-04-15 | 2000-09-12 | Worldwide Semiconductor Manufacturing Corporation | Dishing free process for shallow trench isolation |
| US6645825B1 (en) * | 2000-07-12 | 2003-11-11 | Taiwan Semiconductor Manufacturing Company | Planarization of shallow trench isolation (STI) |
| US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
| US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
| CN1731567B (en) * | 2005-06-22 | 2010-08-18 | 中国科学院上海微系统与信息技术研究所 | IC copper interconnect one-step chemical machinery burnishing technics and relevant nanometer burnishing liquid |
-
2006
- 2006-11-17 CN CNA2006101184633A patent/CN101188197A/en active Pending
-
2007
- 2007-11-12 CN CN2007800374633A patent/CN101523562B/en not_active Expired - Fee Related
- 2007-11-12 WO PCT/CN2007/003196 patent/WO2008058458A1/en active Search and Examination
Also Published As
| Publication number | Publication date |
|---|---|
| CN101188197A (en) | 2008-05-28 |
| CN101523562B (en) | 2012-09-19 |
| WO2008058458A1 (en) | 2008-05-22 |
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