CN101523562B - Step chemical mechanical polishing method - Google Patents
Step chemical mechanical polishing method Download PDFInfo
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- CN101523562B CN101523562B CN2007800374633A CN200780037463A CN101523562B CN 101523562 B CN101523562 B CN 101523562B CN 2007800374633 A CN2007800374633 A CN 2007800374633A CN 200780037463 A CN200780037463 A CN 200780037463A CN 101523562 B CN101523562 B CN 101523562B
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- Prior art keywords
- polishing
- polysilicon
- chemical mechanical
- mechanical polishing
- oxidant
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- 238000005498 polishing Methods 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000126 substance Substances 0.000 title claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229920005591 polysilicon Polymers 0.000 claims abstract description 34
- 239000007800 oxidant agent Substances 0.000 claims abstract description 21
- 239000012530 fluid Substances 0.000 claims description 35
- 230000001590 oxidative effect Effects 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 230000003750 conditioning effect Effects 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- 230000006978 adaptation Effects 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 150000002978 peroxides Chemical class 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 30
- 239000000377 silicon dioxide Substances 0.000 abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000007517 polishing process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229920001219 Polysorbate 40 Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229920006318 anionic polymer Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 229940101027 polysorbate 40 Drugs 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a substep chemical-mechanical polishing method. The invention has the concrete steps that: first step, a chemical-mechanical polishing solution with polysilicon removal rate larger or equal to 200A/min is used to eliminate most of the polysilicon but not expose surfaces of polysilicon; and the surfaces of the polysilicon and subsequently exposed surfaces of polysilicon and silicon dioxide are polished after the oxidizer is added into the polishing solution. The method can avoid a phialiform dent defect on the surface, cause the flatness of wafers to heighten, and increase the cleanness of the wafers and a polishing pad simultaneously to cause the technology more stable.
Description
Technical field
The present invention relates to a kind of step chemical mechanical polishing method.
Technical background
In the polishing process of polysilicon, can there be following problem usually: more too high because polishing speed is selected than (polycrystalline silicon/silicon dioxide), make when last polishing process stops on the silicon dioxide layer, have the dish-shaped recessed damage of polysilicon unavoidably.As shown in Figure 1, a, b are respectively before the polishing and the structure after the polishing among the figure.And this problem can increase the weight of along with the increase of the groove width between the silicon dioxide.This can cause the performance of device and have a strong impact on.
Therefore, solve the dish-shaped recessed damage defective in surface in the polysilicon polishing process, and the removal problem most important.Patent documentation US2003153189 discloses a kind of method of chemico-mechanical polishing and the composition of polishing fluid, reduces the dish-shaped recessed damage of the polysilicon in the oxide groove through adding a kind of anionic polymer, and reduces production costs.Patent documentation US6191039 has disclosed a kind of two step cmp methods, through the control first step and the pH value (9.5～10.5 in second step; 10.2 finishing method～10.35), time and cost that can the reduction polishing, and planarization effect is preferably arranged.
Brief summary of the invention
The objective of the invention is in order to solve in the polishing process of polysilicon; More too high because of the polishing speed selection than (polycrystalline silicon/silicon dioxide), make when last polishing process stops on the silicon dioxide layer, the problem of the dish-shaped recessed damage in surface appears; A kind of dish-shaped recessed damage ratio of defects in surface that reduces is provided; The wafer flatness is increased, and can increase the cleannes on wafer and the polishing pad simultaneously, make the more stable cmp method of technology.
Above-mentioned purpose of the present invention realizes through following technical proposal: first step, adopt to have that polysilicon removes that speed is removed most polysilicon more than or equal to the chemical mechanical polishing liquid of 200A/min but exposed polysilicon surface not; Second step, in this polishing fluid, add oxidant after, polysilicon surface and the polysilicon that comes out subsequently and silica surface are polished.
Among the present invention, make the polysilicon of the first step remove speed belongs to those skilled in the art more than or equal to 200A/min known technology.
In the method for the present invention, the polishing speed possible range of first step polysilicon is 200～10000A/min; Second step, the polishing speed of polysilicon and silicon dioxide is between 10: 1 and 1: 1 than possible range, optimum range is between 5: 1 and 1: 1.
Among the present invention, the end of the first step can be passed through limiting time, or controls end through the terminal point control system.
Among the present invention, described polishing fluid can comprise at least a abrasive grains and water.Described abrasive grains can be selected from one or more in following seven kinds: silicon dioxide, alundum (Al, ceria, zirconium dioxide, carborundum, polytetrafluoroethylene (PTFE).Being weight percentage that the content of described abrasive grains is preferable is less than or equal to 30%.
Among the present invention, described polishing fluid also can comprise other additives of the prior art, removes rate adaptation agent etc. like pH conditioning agent, complexing agent and/or polysilicon.
Among the present invention, described oxidant can be contain thiooxidant, contain the iodine oxidant, brominated oxidant, oxidizer containing chlorine, hydrogen peroxide solution, Peracetic acid or other peroxide etc.What the addition of described oxidant was preferable is weight percentage 0.1～30%.
Positive progressive effect of the present invention is: can avoid the dish-shaped recessed damage defective in surface, the wafer flatness increased, and can increase the cleannes on wafer and the polishing pad simultaneously, make technology more stable.Polishing effect of the present invention is as shown in Figure 2, and a, b are respectively before the polishing and the structure after the polishing among the figure.Its effect will further specify through embodiment.
Summary of the invention
Mode through embodiment further specifies the present invention below, does not therefore limit the present invention among the described scope of embodiments.
Description of drawings
Fig. 1 is in the conventional polysilicon polishing process, the structure of (a) and polishing back (b) before the polishing.
Fig. 2 carries out the polysilicon polishing for adopting the inventive method, the structure of (a) and polishing back (b) before the polishing.
Embodiment 1 step chemical mechanical polishing method
Polishing fluid: 0.1wt.%Al
2O
3, the pH conditioning agent is KOH, water is surplus, pH=11
Oxidant: AMMONIUM PER SULFATE Al
2(S
2O
8)
3
1. polishing fluid is dripped on the PPG CSYMXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 1psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 200A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 0.1wt.%Al
2(S
2O
8)
3, polish the same first step of polishing condition afterwards.
Embodiment 2 step chemical mechanical polishing methods
Polishing fluid: 30wt.%CeO
2, 1.0wt%EDTA, water are surplus, pH=10.
Oxidant: KIO
3
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 900A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 10wt.%KIO
3, polish the same first step of polishing condition afterwards.
Embodiment 3 step chemical mechanical polishing methods
Polishing fluid: 10wt.%ZrO
2, 0.1wt.% polysorbate40, water are surplus, pH=11
Oxidant: KBrO
3
1. polishing fluid is dripped on the PPG CSYMXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 5psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 5000A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 15wt.%KBrO
3, polish the same first step of polishing condition afterwards.
Embodiment 4 step chemical mechanical polishing methods
Polishing fluid: 10wt.%SiC, water are surplus, pH=11
Oxidant: KClO
4
1. polishing fluid is dripped on the PPG CSYMXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 100rpm and 97rpm, applies the downforce of 5psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 8000A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 20wt.%KClO
4, polish the same first step of polishing condition afterwards.
Embodiment 5 step chemical mechanical polishing methods
Polishing fluid: 10wt.% polytetrafluoroethylene (PTFE), water are surplus, pH=11
Oxidant: Peracetic acid
1. polishing fluid is dripped on the PPG CSYMXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 2000A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add the 30wt.% Peracetic acid, polish the same first step of polishing condition afterwards.
Embodiment 6 step chemical mechanical polishing methods
Polishing fluid: 10wt.% polystyrene, water are surplus, pH=11
Oxidant: methyl ethyl ketone peroxide
1. polishing fluid is dripped on the PPG CSYMXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 2600A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add the 15wt.% methyl ethyl ketone peroxide, polish the same first step of polishing condition afterwards.
Effect embodiment 1 step chemical mechanical polishing method
Polishing fluid: 10wt.%SiO
2, water is surplus, pH=11.
Oxidant: hydrogen peroxide solution.
1. polishing fluid is dripped on the PPG CSYMXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 2500A/min.The polishing fluid flow velocity is 100ml/min.
2. in polishing fluid, add the 15wt.% hydrogen peroxide solution, polish the same first step of polishing condition afterwards.Polish results is as shown in table 1:
Polysilicon, silicon dioxide are removed speed and are selected ratio in first, second step of table 1 substep polishing method
| Step | Polysilicon is removed speed (A/min) | Silicon dioxide is removed speed (A/min) | Select ratio |
| First step | 2500 | 300 | 8.3∶1 |
| Second step | 900 | 300 | 3∶1 |
Visible by last table; Compare with first step, after second step added oxidant, polysilicon was removed speed and is significantly reduced; And silicon dioxide removal speed is constant; Make the polycrystalline silicon/silicon dioxide remove rate selection and be reduced to 3: 1, thereby can avoid selecting than too high, make the dish-shaped recessed damage of generation polysilicon when last polishing process stops on the silicon dioxide layer because of polycrystalline silicon/silicon dioxide polishing speed than from 8.3: 1.
Claims (4)
1. step chemical mechanical polishing method; It is characterized in that: first step polishes with having the chemical mechanical polishing liquid of polysilicon removal speed more than or equal to 200 dusts/min, and second step adds oxidant in this polishing fluid polishes, and the addition of described oxidant is weight percentage 10～30%; Wherein, Described polishing fluid comprises at least a abrasive grains and water, and described abrasive grains is selected from one or more in following five kinds: ceria, zirconium dioxide; Carborundum, polytetrafluoroethylene and polystyrene.
2. step chemical mechanical polishing method according to claim 1 is characterized in that: the content of described abrasive grains is weight percentage and is less than or equal to 30%.
3. step chemical mechanical polishing method according to claim 1 is characterized in that: described polishing fluid also comprises pH conditioning agent, complexing agent and/or polysilicon and removes the rate adaptation agent.
4. step chemical mechanical polishing method according to claim 1 is characterized in that: described oxidant for contain thiooxidant, contain the iodine oxidant, brominated oxidant, oxidizer containing chlorine, hydrogen peroxide solution, Peracetic acid or other peroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007800374633A CN101523562B (en) | 2006-11-17 | 2007-11-12 | Step chemical mechanical polishing method |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610118463.3 | 2006-11-17 | ||
| CNA2006101184633A CN101188197A (en) | 2006-11-17 | 2006-11-17 | Step chemical mechanical polishing method |
| CN2007800374633A CN101523562B (en) | 2006-11-17 | 2007-11-12 | Step chemical mechanical polishing method |
| PCT/CN2007/003196 WO2008058458A1 (en) | 2006-11-17 | 2007-11-12 | Multiplestep cmp method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101523562A CN101523562A (en) | 2009-09-02 |
| CN101523562B true CN101523562B (en) | 2012-09-19 |
Family
ID=39401317
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101184633A Pending CN101188197A (en) | 2006-11-17 | 2006-11-17 | Step chemical mechanical polishing method |
| CN2007800374633A Expired - Fee Related CN101523562B (en) | 2006-11-17 | 2007-11-12 | Step chemical mechanical polishing method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101184633A Pending CN101188197A (en) | 2006-11-17 | 2006-11-17 | Step chemical mechanical polishing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101188197A (en) |
| WO (1) | WO2008058458A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906269A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Slurry for metal chemical and mechanical polishing and using method thereof |
| CN101992422B (en) * | 2009-08-25 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Process control method and system of copper chemical mechanical polishing |
| CN102148130B (en) * | 2010-02-09 | 2012-11-07 | 上海华虹Nec电子有限公司 | Method for improving control capability of surface photoetching process sensitive to external environment |
| CN105538047B (en) * | 2015-12-11 | 2017-09-22 | 中国航空工业集团公司北京航空材料研究院 | A kind of surface polishing method of the organic transparent products of aviation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1232290A (en) * | 1998-04-15 | 1999-10-20 | 世大积体电路股份有限公司 | Shallow slot isolating method for avoiding dishing |
| US6350693B2 (en) * | 1997-11-15 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company | Method of CMP of polysilicon |
| US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
| US6645825B1 (en) * | 2000-07-12 | 2003-11-11 | Taiwan Semiconductor Manufacturing Company | Planarization of shallow trench isolation (STI) |
| CN1731567A (en) * | 2005-06-22 | 2006-02-08 | 中国科学院上海微系统与信息技术研究所 | IC copper interconnect one-step chemical machinery burnishing technics and relevant nanometer burnishing liquid |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
-
2006
- 2006-11-17 CN CNA2006101184633A patent/CN101188197A/en active Pending
-
2007
- 2007-11-12 CN CN2007800374633A patent/CN101523562B/en not_active Expired - Fee Related
- 2007-11-12 WO PCT/CN2007/003196 patent/WO2008058458A1/en active Search and Examination
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6350693B2 (en) * | 1997-11-15 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company | Method of CMP of polysilicon |
| CN1232290A (en) * | 1998-04-15 | 1999-10-20 | 世大积体电路股份有限公司 | Shallow slot isolating method for avoiding dishing |
| US6645825B1 (en) * | 2000-07-12 | 2003-11-11 | Taiwan Semiconductor Manufacturing Company | Planarization of shallow trench isolation (STI) |
| US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
| CN1731567A (en) * | 2005-06-22 | 2006-02-08 | 中国科学院上海微系统与信息技术研究所 | IC copper interconnect one-step chemical machinery burnishing technics and relevant nanometer burnishing liquid |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101523562A (en) | 2009-09-02 |
| WO2008058458A1 (en) | 2008-05-22 |
| CN101188197A (en) | 2008-05-28 |
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