CN101188197A - Step chemical mechanical polishing method - Google Patents

Step chemical mechanical polishing method Download PDF

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Publication number
CN101188197A
CN101188197A CNA2006101184633A CN200610118463A CN101188197A CN 101188197 A CN101188197 A CN 101188197A CN A2006101184633 A CNA2006101184633 A CN A2006101184633A CN 200610118463 A CN200610118463 A CN 200610118463A CN 101188197 A CN101188197 A CN 101188197A
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CN
China
Prior art keywords
polishing
polysilicon
chemical mechanical
mechanical polishing
polishing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101184633A
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Chinese (zh)
Inventor
俞昌
杨春晓
荆建芬
王麟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anji Microelectronics Shanghai Co Ltd
Anji Microelectronics Co Ltd
Original Assignee
Anji Microelectronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai Co Ltd filed Critical Anji Microelectronics Shanghai Co Ltd
Priority to CNA2006101184633A priority Critical patent/CN101188197A/en
Priority to PCT/CN2007/003196 priority patent/WO2008058458A1/en
Priority to CN2007800374633A priority patent/CN101523562B/en
Publication of CN101188197A publication Critical patent/CN101188197A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Abstract

The invention relates to a substep chemical-mechanical polishing method. The invention has the concrete steps that: first step, a chemical-mechanical polishing solution with polysilicon removal rate larger or equal to 200A/min is used to eliminate most of the polysilicon but not expose surfaces of polysilicon; second step, and the surfaces of the polysilicon and subsequently exposed surfaces of polysilicon and silicon dioxide are polished after the oxidizer is added into the polishing solution. The method can avoid a phialiform dent defect on the surface, cause the flatness of wafers to heighten, and increase the cleanness of the wafers and a polishing pad simultaneously to cause the technology more stable.

Description

Step chemical mechanical polishing method
Technical field
The present invention relates to a kind of step chemical mechanical polishing method.
Background technology
In the polishing process of polysilicon, there are the following problems in meeting usually: more too high because polishing speed is selected than (polycrystalline silicon/silicon dioxide), make when last polishing process stops on the silicon dioxide layer, and have the dish-shaped recessed damage of polysilicon unavoidably.As shown in Figure 1, a, b are respectively before the polishing and the structure after the polishing among the figure.And this problem can increase the weight of along with the increase of the groove width between the silicon dioxide.This can cause the performance of device and have a strong impact on.
Therefore, solve the dish-shaped recessed damage defective in surface in the polysilicon polishing process, and the removal problem most important.Patent documentation US2003153189 discloses a kind of method of chemico-mechanical polishing and the composition of polishing fluid, reduces the dish-shaped recessed damage of the polysilicon in the oxide groove by adding a kind of anionic polymer, and reduces production costs.Patent documentation US6191039 has disclosed a kind of two step cmp methods, by the control first step and the pH value (9.5～10.5 in second step; 10.2 finishing method～10.35), time and cost that can the reduction polishing, and planarization effect is preferably arranged.
Summary of the invention
The objective of the invention is in order to solve in the polishing process of polysilicon, because of polishing speed is selected more too high than (polycrystalline silicon/silicon dioxide), make when last polishing process stops on the silicon dioxide layer, the problem that the dish-shaped recessed damage in surface occurs, a kind of dish-shaped recessed damage ratio of defects in surface that reduces is provided, the wafer flatness is increased, and can increase the cleannes on wafer and the polishing pad simultaneously, make the more stable cmp method of technology.
Above-mentioned purpose of the present invention realizes by following technical proposal: first step, adopt to have that polysilicon removes that speed is removed most polysilicon more than or equal to the chemical mechanical polishing liquid of 200A/min but exposed polysilicon surface not; Second step, in this polishing fluid, add oxidant after, polysilicon surface and the polysilicon that comes out subsequently and silica surface are polished.
Among the present invention, make the polysilicon of the first step remove speed belongs to those skilled in the art more than or equal to 200A/min known technology.
In the method for the present invention, the polishing speed possible range of first step polysilicon is 200～10000A/min; Second step, the polishing speed of polysilicon and silicon dioxide is between 10: 1 and 1: 1 than possible range, optimum range is between 5: 1 and 1: 1.
Among the present invention, the end of the first step can be passed through limiting time, or controls end by the terminal point control system.
Among the present invention, described polishing fluid can comprise at least a abrasive grains and water.Described abrasive grains can be selected from one or more in following seven kinds: silicon dioxide, alundum (Al, ceria, zirconium dioxide, carborundum, polytetrafluoroethylene (PTFE).Being weight percentage that the content of described abrasive grains is preferable is less than or equal to 30%.
Among the present invention, described polishing fluid also can comprise other additives of the prior art, removes rate adaptation agent etc. as pH conditioning agent, complexing agent and/or polysilicon.
Among the present invention, described oxidant can be contain thiooxidant, contain the iodine oxidant, brominated oxidant, oxidizer containing chlorine, hydrogen peroxide, Peracetic acid or other peroxide etc.What the addition of described oxidant was preferable is weight percentage 0.1～30%.
Positive progressive effect of the present invention is: can avoid the dish-shaped recessed damage defective in surface, the wafer flatness be increased, and can increase the cleannes on wafer and the polishing pad simultaneously, make technology more stable.Polishing effect of the present invention as shown in Figure 2, among the figure a, b be respectively the polishing before and the polishing after structure.Its effect will further specify by embodiment.
Description of drawings
Fig. 1 is in the conventional polysilicon polishing process, the structure of (a) and polishing back (b) before the polishing.
Fig. 2 carries out the polysilicon polishing for adopting the inventive method, the structure of (a) and polishing back (b) before the polishing.
Embodiment
Mode below by embodiment further specifies the present invention, does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1 step chemical mechanical polishing method
Polishing fluid: 0.1wt.%Al 2O 3, the pH conditioning agent is KOH, water is surplus, pH=11
Oxidant: AMMONIUM PER SULFATE Al 2(S 2O 8) 3
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 1psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 200A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 0.1wt.%Al 2(S 2O 8) 3, polish the same first step of polishing condition afterwards.
Embodiment 2 step chemical mechanical polishing methods
Polishing fluid: 30wt.%CeO 2, 1.0wt%EDTA, water are surplus, pH=10.
Oxidant: KIO 3
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 900A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 10wt.%KIO 3, polish the same first step of polishing condition afterwards.
Embodiment 3 step chemical mechanical polishing methods
Polishing fluid: 10wt.%ZrO 2, 0.1wt.% polysorbate40, water are surplus, pH=11
Oxidant: KBrO 3
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 5psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 5000A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 15wt.%KBrO 3, polish the same first step of polishing condition afterwards.
Embodiment 4 step chemical mechanical polishing methods
Polishing fluid: 10wt.%SiC, water are surplus, pH=11
Oxidant: KClO 4
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 100rpm and 97rpm, applies the downforce of 5psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 8000A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add 20wt.%KClO 4, polish the same first step of polishing condition afterwards.
Embodiment 5 step chemical mechanical polishing methods
Polishing fluid: 10wt.% polytetrafluoroethylene (PTFE), water are surplus, pH=11
Oxidant: Peracetic acid
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 2000A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add the 30wt.% Peracetic acid, polish the same first step of polishing condition afterwards.
Embodiment 6 step chemical mechanical polishing methods
Polishing fluid: 10wt.% polystyrene, water are surplus, pH=11
Oxidant: methyl ethyl ketone peroxide
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 2600A/min.The polishing fluid flow velocity is 100ml/min, limiting time 2 minutes.
2. in polishing fluid, add the 15wt.% methyl ethyl ketone peroxide, polish the same first step of polishing condition afterwards.
Effect embodiment 1 step chemical mechanical polishing method
Polishing fluid: 10wt.%SiO 2, water is surplus, pH=11.
Oxidant: hydrogen peroxide.
1. polishing fluid is dripped on the PPG CSY MXP-710 polishing pad, front wafer surface is downward, and the contact pad interface with rotating speed difference rotary finishing dish and the rubbing head of 70rpm and 80rpm, applies the downforce of 3psi simultaneously at polished chip back surface, polish.Polysilicon is removed speed: 2500A/min.The polishing fluid flow velocity is 100ml/min.
2. in polishing fluid, add the 15wt.% hydrogen peroxide, polish the same first step of polishing condition afterwards.
Polish results is as shown in table 1:
Polysilicon, silicon dioxide are removed speed and are selected ratio in first, second step of table 1 substep polishing method
Step Polysilicon is removed speed (A/min) Silicon dioxide is removed speed (A/min) Select ratio
First step 2500 300 8.3∶1
Second step 900 300 3∶1
As seen from the above table, compare with first step, after second step adds oxidant, polysilicon is removed speed and is significantly reduced, and silicon dioxide removal speed is constant, make the polycrystalline silicon/silicon dioxide remove rate selection and be reduced to 3: 1, thereby can avoid selecting than too high, make the dish-shaped recessed damage of generation polysilicon when last polishing process stops on the silicon dioxide layer because of polycrystalline silicon/silicon dioxide polishing speed than from 8.3: 1.

Claims (7)

1. step chemical mechanical polishing method is characterized in that: first step is removed speed and is polished more than or equal to the chemical mechanical polishing liquid of 200A/min with having polysilicon, and second step adds oxidant and polishes in this polishing fluid.
2. step chemical mechanical polishing method according to claim 1 is characterized in that: described polishing fluid comprises at least a abrasive grains and water.
3. step chemical mechanical polishing method according to claim 2 is characterized in that: described abrasive grains is selected from one or more in following seven kinds: silicon dioxide, alundum (Al, ceria, zirconium dioxide, carborundum, polytetrafluoroethylene and polystyrene.
4. step chemical mechanical polishing method according to claim 2 is characterized in that: the content of described abrasive grains is weight percentage and is less than or equal to 30%.
5. step chemical mechanical polishing method according to claim 2 is characterized in that: described polishing fluid also comprises pH conditioning agent, complexing agent and/or polysilicon and removes the rate adaptation agent.
6. step chemical mechanical polishing method according to claim 1 is characterized in that: described oxidant for contain thiooxidant, contain the iodine oxidant, brominated oxidant, oxidizer containing chlorine, hydrogen peroxide, Peracetic acid or other peroxide.
7. step chemical mechanical polishing method according to claim 1 is characterized in that: the addition of described oxidant is weight percentage 0.1～30%.
CNA2006101184633A 2006-11-17 2006-11-17 Step chemical mechanical polishing method Pending CN101188197A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CNA2006101184633A CN101188197A (en) 2006-11-17 2006-11-17 Step chemical mechanical polishing method
PCT/CN2007/003196 WO2008058458A1 (en) 2006-11-17 2007-11-12 Multiplestep cmp method
CN2007800374633A CN101523562B (en) 2006-11-17 2007-11-12 Step chemical mechanical polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2006101184633A CN101188197A (en) 2006-11-17 2006-11-17 Step chemical mechanical polishing method

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CN101188197A true CN101188197A (en) 2008-05-28

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CN2007800374633A Expired - Fee Related CN101523562B (en) 2006-11-17 2007-11-12 Step chemical mechanical polishing method

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WO (1) WO2008058458A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101906269A (en) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 Slurry for metal chemical and mechanical polishing and using method thereof
CN101992422B (en) * 2009-08-25 2012-07-25 中芯国际集成电路制造(上海)有限公司 Process control method and system of copper chemical mechanical polishing
CN102148130B (en) * 2010-02-09 2012-11-07 上海华虹Nec电子有限公司 Method for improving control capability of surface photoetching process sensitive to external environment
CN105538047A (en) * 2015-12-11 2016-05-04 中国航空工业集团公司北京航空材料研究院 Surface grinding and polishing method for aviation organic transparent workpiece

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW358983B (en) * 1997-11-15 1999-05-21 Taiwan Semiconductor Mfg Co Ltd Chemical mechanical grinding method
US6117748A (en) * 1998-04-15 2000-09-12 Worldwide Semiconductor Manufacturing Corporation Dishing free process for shallow trench isolation
US6645825B1 (en) * 2000-07-12 2003-11-11 Taiwan Semiconductor Manufacturing Company Planarization of shallow trench isolation (STI)
US6589099B2 (en) * 2001-07-09 2003-07-08 Motorola, Inc. Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
CN1731567B (en) * 2005-06-22 2010-08-18 中国科学院上海微系统与信息技术研究所 IC copper interconnect one-step chemical machinery burnishing technics and relevant nanometer burnishing liquid

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101906269A (en) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 Slurry for metal chemical and mechanical polishing and using method thereof
CN101992422B (en) * 2009-08-25 2012-07-25 中芯国际集成电路制造(上海)有限公司 Process control method and system of copper chemical mechanical polishing
CN102148130B (en) * 2010-02-09 2012-11-07 上海华虹Nec电子有限公司 Method for improving control capability of surface photoetching process sensitive to external environment
CN105538047A (en) * 2015-12-11 2016-05-04 中国航空工业集团公司北京航空材料研究院 Surface grinding and polishing method for aviation organic transparent workpiece

Also Published As

Publication number Publication date
CN101523562B (en) 2012-09-19
CN101523562A (en) 2009-09-02
WO2008058458A1 (en) 2008-05-22

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Open date: 20080528