CN101521988A - Preparation method of metal base copper-clad plate and copper-clad sectional material - Google Patents
Preparation method of metal base copper-clad plate and copper-clad sectional material Download PDFInfo
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- CN101521988A CN101521988A CN200910097241A CN200910097241A CN101521988A CN 101521988 A CN101521988 A CN 101521988A CN 200910097241 A CN200910097241 A CN 200910097241A CN 200910097241 A CN200910097241 A CN 200910097241A CN 101521988 A CN101521988 A CN 101521988A
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Abstract
The invention belongs to the technical field of basic electronic devices, in particular relates to a preparation method of a metal base copper-clad plate and copper-clad sectional material, which is characterized by comprising the following steps: selecting one of aluminum, aluminum alloy, copper and copper alloy with better heat conductive property as the metal base material, removing burrs and sharp-angles of the metal base material, carrying out the surface spray sand and chemical polishing treatment to the metal base material by sand with more than 250mu; carrying out the surface ceramic treatment to the surface of the metal base material treated by the spray sand and the chemical polishing by adopting one of the processes of anodic oxidation, micro-arc oxidation, ion spraying, sputtering, evaporating, and sol-gel, coating an insulation layer, i.e. coating the insulation layer on the outer surface of a ceramic insulation layer, and sequentially depositing a transition layer, a blocking layer, a main conduction layer and an optional surface conduction layer on at least one surface of the insulation layer to form a composite conductive metal layer. The invention has simple process, stable quality of finish product and low production cost.
Description
Technical field
The invention belongs to technical field of basic electronic devices, particularly relate to a kind of Metal Substrate copper-clad plate, cover the preparation method of copper section bar.
Prior art
Along with the development of high power, high-density electronic device, the heat dissipation problem of electronic device will become increasingly conspicuous.The ordinary printed wiring board mostly is glass cloth and soaks with resin, and drying processes, and its heat-conducting effect is relatively poor.For solving the heat dissipation problem of high power, high-density device, now occur some Metal Substrate copper-clad plates and covered the copper section bar, as patent CN200620032367.2, CN200610145206.9, these Metal Substrate copper-clad plates and to cover the copper section bar be to be made of metal substrate, ceramic insulating layer, resin insulating barrier and copper foil plate etc., metal substrate is thickness several millimeters aluminium sheet or a copper coin approximately, on metal substrate, apply earlier a layer thickness and be tens microns to the epoxy resin of hundreds of micron or be filled with the resin insulating barrier of inorganic Heat Conduction Material, on this resin insulating barrier, cover copper foil plate again.These Metal Substrate copper-clad plates and cover the surface mount that the copper section bar has been widely used in high power device, but also there are some defectives in they:
1. having a layer thickness between copper foil plate and metal substrate is the tens thicker resin insulating barriers to the hundreds of micron, because the insulation property and the heat conductivility of resin are not good, realize that high insulating property must make thickness of insulating layer thicker, and want increased thermal conductivity can make insulating barrier thinner.Therefore, these Metal Substrate copper-clad plates and cover the heat dispersion of copper section bar and insulation property desirable not enough.
2. it is bonding that copper foil plate and substrate adopt adhesive such as epoxy resin, and the adhesion between copper foil plate and the substrate, heat resistance are not good, bring influence can for the reliability of circuit board.
3. these Metal Substrate copper-clad plates and cover the copper section bar and do not have to be provided with the barrier metal layer stop the high temperature lead-free solder corrosion so difficulty is born the high-temperature solder corrosion, more are not suitable for the aluminium wire ultra-sonic welded.
4. copper foil plate covers on metallic plate by resin insulating barrier, and its surperficial evenness is very poor, and this particularly makes the superfine line circuit to photoetching corrosion making printed circuit and brings difficulty.
5. aluminium, copper base be very easily by etchant solutions such as soda acid corrosion, so above-mentioned Metal Substrate copper-clad plate and cover the very difficult work that continues to finish ensuing circuit production with traditional solution etching technics of copper section bar.
Goal of the invention
The object of the present invention is to provide that a kind of manufacture craft is simple, end product quality is stable, production cost is low, can adapt to traditional solution corrosion making printed circuit the Metal Substrate copper-clad plate, cover the preparation method of copper section bar.
Summary of the invention
Metal Substrate copper-clad plate provided by the invention, the preparation method of covering the copper section bar adopt such technical solution to realize: it is characterized in that comprising that material selection, surface treatment, surface ceramic deposition handle, be coated with insulating layer coating, plating composite conducting metal level step, the theing contents are as follows of described each step:
Material is selected: select a kind of metal base in the good aluminium of heat conductivility, aluminium alloy, copper, copper alloy, the stainless steel, described metal base is a kind of in metal substrate and the heat radiating metal section bar, and wherein the thickness of metal substrate is not less than 0.5mm.
Surface treatment: selected metal base is carried out deburring and the finishing of removing wedge angle, adopting the above sand of 250 orders that metal base is carried out surface sand-blasting then handles, make the surface of metal base form one deck sand blasted surface, again this grit blasted surfaces is carried out chemical polishing.
Surface ceramic deposition is handled: the metal base that will be formed with sandblast and polishing carries out insulation processing, makes metallic substrate surface generate one deck ceramic insulating layer;
Be coated with insulating layer coating: the outer surface at ceramic insulating layer adopts plasma spraying to apply one deck Teflon insulating barrier.
Plating composite conducting metal level: at least one face of insulating barrier, deposit the composite conducting metal level that transition zone, barrier layer, main conductive layer and optional surface conductance layer constitute successively.
Because the present invention adopts outer surface at ceramic insulating layer to apply the good Teflon layer of one deck insulating properties, thermal conductivity, chemical stability, temperature tolerance as insulating barrier, thereby insulating barrier of the present invention not only has very strong insulating properties but also have good heat conductivility; Simultaneously because Teflon insulating barrier of the present invention is difficult by acid and alkali corrosion, and the Teflon insulating barrier is coated in all surface of metallic plate, so can not damage metal substrate during the chemical corrosion circuit, can not stain reagent yet, thereby make the present invention can adopt traditional solution lithographic technique to obtain required circuit, and keep characteristics cheaply on its surface.
On the other hand, conductive layer of the present invention is the composite conducting metal level that is made of transition zone, barrier layer, main conductive layer and optional surface conductance layer, and transition zone can mate the coefficient of expansion of metal and Teflon well, reduces internal stress; Sputtered film can strengthen the adhesion of rete and substrate significantly; The barrier layer can effectively stop the corrosion of high temperature lead-free solder, therefore, adopts Metal Substrate copper-clad plate that the inventive method produces, multiple welding manners such as covering the copper profile structure can comprehensive adaptation soldered, high-temperature soldering, aluminium wire ultra-sonic welded.
Description of drawings
Fig. 1 is the schematic diagram that covers the copper profile structure of the present invention
Fig. 2 is the schematic diagram of Metal Substrate structure for covering copper plate of the present invention
Embodiment
The preparation method of Metal Substrate copper-clad plate provided by the invention comprises that material selection, surface treatment, surface ceramic deposition handle, be coated with insulating layer coating, plating composite conducting metal level step, the theing contents are as follows of described each step:
Material is selected: selecting the good thickness of heat conductivility is metal base 1 greater than aluminium, aluminium alloy, copper, copper alloy, the corrosion resistant plate of 0.5mm;
Surface treatment: the metal substrate of choosing is carried out deburring and the finishing of removing wedge angle, adopting granularity then is that the above sand of 250 orders carries out the surface sand-blasting processing to metal base, surface at metal base 1 forms grit blasted surfaces 1-1, and the thickness of this grit blasted surfaces 1-1 is 10-500nm; The mixing material of this aluminium sheet being put into SPA, red fuming nitric acid (RFNA), glacial acetic acid mass ratio again and be 85%:5%:10% carries out chemical polishing, the temperature of chemical polishing remains on about 120 ℃, after about 3 minutes pure aluminum plate is taken out, descend the surface ceramic deposition in step to handle at once.
Surface ceramic deposition is handled: this aluminium sheet is put into the sulfuric acid solution of 15%-20%, and aluminium sheet is as anode, and carbon-point is as negative electrode, and voltage carries out anodic oxidation for 20 volts, and generation thickness is the ceramic insulating layer 2 of 5-20um; Generation there is the pure aluminum plate of ceramic insulating layer 2 to be placed on to carry out painted sealing of hole in the inorganic pigment aqueous solution of 70 ℃ of temperature handles, generate ceramic insulating layer 2.Ceramic insulating layer 2 also can adopt a kind of technology in differential arc oxidation, plasma spray, sputter, evaporation, the sol-gel process to finish, and ceramic insulating layer can be a metal oxide, also can be metal nitride.
Be coated with insulating layer coating: after adopting the plasma water cleaning, drying, directly carrying out plasma spray coating process on ceramic insulating layer 2 applies the insulating barrier 3 that a layer thickness is the Teflon material of 5-25um, and the insulating barrier 3 of Teflon material is solidified;
Plating composite conducting metal level: the metal substrate that will be solidified with Teflon insulating barrier 3 is put into the vacuum magnetic-control sputtering filming equipment, the titanium of sputter one layer thickness about 100-500A at least one surface of Teflon insulating barrier 3 successively, chromium, nickel, titanium alloy, evanohm, a kind of metal in the nickel alloy is as transition zone 4-1, on described transition zone 4-1 sputter one layer thickness at the nickel of 0.3-1um or copper or monel layer as barrier layer 4-2, again on the 4-2 of barrier layer sputter generate a layer thickness at the copper of 0.1-1um or silver layer as main conductive layer 4-3, thereby obtain the alleged Metal Substrate copper-clad plate of invention.
In order to increase the conductive capability of composite conducting metal level, after obtaining main conductive layer 4-3, can continue under same vacuum method with magnetron sputtering plate again a layer thickness at the copper of 1-3um or silver layer as surface conductance layer 4-4, perhaps adopt electroplating technology plating one layer thickness at the copper of 1-3um or silver layer as surface conductance layer 4-4, thereby obtain the alleged Metal Substrate copper-clad plate of invention.
A kind of technology that described ceramic insulating layer 2 adopts in anodic oxidations, differential arc oxidation, plasma spray, sputter, evaporation, the sol-gel process deposits to ceramic insulating layer 2 outer surface of described metal substrate 1;
The material of described insulating barrier 3 is a Teflon;
Transition zone 4-1 in the described composite conducting layer is strong active metal, alloy and electric conducting material: a kind of as in titanium, aluminium, chromium, nickel, titanium alloy, aluminium alloy, evanohm, the nickel alloy, its thickness is 100-500A.
Barrier layer 4-2 in the described composite conducting metal level is a manufacturing materials by a kind of in nickel, copper or the monel, adopts the sputtering technology deposition to form, and its thickness is 0.3-1um.
Main conductive layer 4-3 in the described composite conducting metal level by electric conductivity preferably copper or silver or in a kind of be manufacturing materials, adopt sputtering technology to deposit and form, its thickness is 0.1-1um.
In the described composite conducting metal level main conductive layer 4-3 on deposit optional surface conductance layer 4-4, surface conductance layer 4-4 by electric conductivity preferably live a kind of in the gold copper-base alloy of copper or silver be manufacturing materials, adopt sputtering technology or electroplating technology deposition to form, its thickness is 1-3um.
The metal-based copper-clad plate of the inventive method preparation or cover the copper section bar and have the insulating properties height, heat dispersion is excellent Very, the advantage such as good reliability, it can adopt the conventional soln etching process to make printed circuit.
Claims (9)
1, Metal Substrate copper-clad plate, cover the preparation method of copper section bar, it is characterized in that comprising that material selection, surface treatment, surface ceramic deposition handle, be coated with insulating layer coating, plating composite conducting metal level step, the theing contents are as follows of described each step:
Material is selected: selecting a kind of in the good aluminium of heat conductivility, aluminium alloy, copper, copper alloy, the stainless steel is metal base, and described metal base is a kind of in metal substrate and the heat radiating metal section bar, and wherein the thickness of metal substrate is not less than 0.5mm;
Surface treatment:, adopt the above sand of 250 orders that metal base is carried out surface sand-blasting then and handle to the finishing that selected metal base carries out deburring and removes wedge angle; Surface at metal base forms grit blasted surfaces, and the thickness of this grit blasted surfaces is 10-500nm, carries out chemical polishing then and handles;
Surface ceramic deposition is handled: will adopt a kind of technology in anodic oxidation, differential arc oxidation, plasma spray, sputter, evaporation, the sol-gel process to carry out the surface ceramic deposition processing through sandblast and through the surface of the metal base that chemical polishing is handled, making and generating thickness on the metal base be the ceramic insulating layer of 5-20um;
Be coated with insulating layer coating: the outer surface at ceramic insulating layer applies a layer insulating, and this insulating barrier is the Teflon insulating barrier, and its thickness is 5-25um;
Composite conducting metal level: at least one face of insulating barrier, deposit transition zone, barrier layer, main conductive layer and optional surface conductance layer successively and constitute the composite conducting metal level.
2, Metal Substrate copper-clad plate according to claim 1, cover the preparation method of copper section bar, it is characterized in that described process of surface treatment is:, adopt the above sand of 250 orders that pure aluminum plate is carried out surface sand-blasting then and handle to the finishing that the metal base of choosing carries out deburring and removes wedge angle; Surface at metal base forms grit blasted surfaces, the thickness of this grit blasted surfaces is 10-500nm, the mixing material of this metal base being put into SPA, red fuming nitric acid (RFNA), glacial acetic acid mass ratio again and be 85%:5%:10% carries out chemical polishing, and the temperature of chemical polishing remains on about 120 ℃.
3, Metal Substrate copper-clad plate according to claim 1, cover the preparation method of copper section bar, it is characterized in that described surface ceramic deposition treatment process is: will adopt a kind of technology in anodic oxidation, differential arc oxidation, plasma spray, sputter, evaporation, the sol-gel process to carry out the surface ceramic deposition processing through sandblast and through the surface of the metal base that chemical polishing is handled, making and generating thickness on the metal base is the ceramic insulating layer of 5-20um, uses the plasma water cleaning, drying at last.
4, Metal Substrate copper-clad plate according to claim 1, cover the preparation method of copper section bar, it is characterized in that the described insulating layer coating technology that is coated with is: directly on ceramic insulating layer, apply the insulating barrier that a layer thickness is the Teflon material of 5-25um, the insulating barrier of Teflon material is solidified with plasma spray coating process.
5, Metal Substrate copper-clad plate according to claim 1, cover the preparation method of copper section bar, it is characterized in that described composite conducting metal level technology is: the metal base that will be solidified with the Teflon insulating barrier is put into the vacuum magnetic-control sputtering filming equipment, sputter last layer thickness is that the metal level of 100-500A is as transition zone on the Teflon insulating barrier successively, on transition zone magnetron sputtering one layer thickness at the metal level of 0.3-1um as the barrier layer, again on the barrier layer sputter generate a layer thickness be the metal level of 0.1-1um as main conductive layer, thereby obtain the Metal Substrate copper-clad plate.Perhaps on acquired main conductive layer, adopt sputter or electroplating technology to generate the optional surface conductance layer of metal level conduct that a layer thickness is 1-3um, obtain the Metal Substrate copper-clad plate equally.
6, Metal Substrate copper-clad plate according to claim 5, cover the preparation method of copper section bar, it is characterized in that transition zone in the described composite conducting layer is by strong active metal, alloy and electric conducting material: a kind of as in titanium, aluminium, chromium, nickel, titanium alloy, aluminium alloy, evanohm, the nickel alloy, its thickness is 100-500A.
7, Metal Substrate copper-clad plate according to claim 5, cover the preparation method of copper section bar, it is characterized in that a kind of for manufacturing materials by in nickel, copper, the monel of barrier layer in the described composite conducting metal level, adopt the sputtering technology deposition to form, its thickness is 0.3-1um.
8, Metal Substrate copper-clad plate according to claim 5, cover the preparation method of copper section bar, it is characterized in that in the described composite conducting metal level main conductive layer by electric conductivity preferably a kind of in copper or the silver be manufacturing materials, adopt the sputtering technology deposition to form, its thickness is 0.1-1um.
9, Metal Substrate copper-clad plate according to claim 5, cover the preparation method of copper section bar, it is characterized in that depositing the surface conductance layer on the main conductive layer in the described composite conducting metal level, the surface conductance layer by electric conductivity preferably a kind of in copper or the ag material be manufacturing materials, adopt sputtering technology or electroplating technology deposition to form, its thickness is 1-3um.
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