CN101505574B - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN101505574B CN101505574B CN2009100069203A CN200910006920A CN101505574B CN 101505574 B CN101505574 B CN 101505574B CN 2009100069203 A CN2009100069203 A CN 2009100069203A CN 200910006920 A CN200910006920 A CN 200910006920A CN 101505574 B CN101505574 B CN 101505574B
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Abstract
The invention provides a plasma processing apparatus. The plasma ignition property and ignition stability are improved by defining a positional relationship between a dielectric and the slots. The plasma processing apparatus (11) includes a processing chamber (12) having a top opening; a dielectric (15) which has inclined surfaces (16a and 16b) on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber (12); and an antenna (24) disposed on a top surface of the dielectric(15) and used for supplying microwave to the dielectric (15), thereby generating plasma at the bottom surface of the dielectric (15). Further, the antenna (24) is provided with a plurality of slots (25) positioned uprightly above the inclined surfaces (16a and 16b).
Description
Technical field
The disclosure relates to a kind of apparatus for processing plasma.
Background technology
For example, in TOHKEMY 2005-100931 communique (patent documentation 1) a kind of traditional apparatus for processing plasma is disclosed.Wherein the apparatus for processing plasma of explanation comprises: plasma generation chamber, wherein hold being processed substrate; Antenna (antenna), it produces the electromagnetic field by microwave-driven; Top board, the peristome of its confined plasma body generating chamber; And taper protuberance or recess, it is formed on the bottom surface side of top board.
Apparatus for processing plasma with above-mentioned structure can form best resonance (resonance) zone through the diametric thickness that changes top board continuously under any condition.As a result, in patent documentation 1, mentioned and to have produced stable plasma.
Patent documentation 1: TOHKEMY 2005-100931 communique
Summary of the invention
In having the apparatus for processing plasma of above-mentioned structure, the slit from be arranged on antenna is towards the top board radiated microwaves.Therefore, think that the position relation between top board and the slit is important for the stable plasma generation of realization.
Consider above-mentioned situation, the disclosure provides a kind of apparatus for processing plasma, it is characterized in that concerning to come and greatly improving plasma igniting property and Ignition Stability through limiting position between dielectric and the slit.
Except quartz, the material that is used to constitute the top board with above-mentioned structure can be a pottery etc.Here, because the material of top board is depended in the microwave resonance zone, therefore expectation depends on that the material of top board limits the shape of top board, stably to produce plasma.
Here, the disclosure also provides a kind of next apparatus for processing plasma that further improves plasma igniting property of optimum shape that limits top board through the material that depends on top board.
Apparatus for processing plasma according to an embodiment of the invention comprises: process chamber, and it has open top; Dielectric has the inclined plane on its bottom surface, make dielectric gauge change continuously, and this dielectric is arranged to seal the open top of process chamber; And antenna, it is disposed on dielectric end face, is used for supplying with microwave to dielectric, thereby produces plasma in dielectric bottom surface.In addition, antenna is provided with a plurality of slits of the vertical top that is positioned at the inclined plane.
Utilize above-mentioned structure, through the slit to the inclined plane radiated microwaves.If the frequency at any one position microwave on inclined plane is consistent with the gauge of dielectric plate, then the electric field strength of dielectric bottom surface increases.Thereby plasma igniting property improves with stability.
Be desirably in dielectric bottom surface and form endless groove, the inclined plane is as the interior all side wall surfaces and the outer circumferential side wall of endless groove.In addition, each side's in the slit is positioned in all side wall surfaces and the outer circumferential side wall vertical top.As an example, the inclined plane is a taper seat.
Expect a plurality of slits with respect to the center that the connects antenna direction identical with identical angle tilt with the straight line edge in each slit.As a result, etch-rate (E/R) homogeneous that becomes that distributes.
Apparatus for processing plasma according to an embodiment of the invention comprises: process chamber, and it has open top; Dielectric has endless groove on its bottom surface, and this dielectric is arranged to seal the open top of process chamber; And antenna, it is used for supplying with microwave to dielectric, thereby produces plasma in dielectric bottom surface.In addition, if the frequency of the light velocity, microwave and the dielectric constant that constitutes dielectric material are respectively c, f and ε r, then the groove width w of groove satisfies following mathematical expression 1:
[mathematical expression 1]
Utilize above-mentioned structure, allow the Width resonance of microwave, make that the electric field strength of dielectric whole bottom surface strengthens along groove.Thereby, the apparatus for processing plasma that can obtain to have excellent plasma igniting property.
If expect that dielectric radius is R, then groove is positioned at the outside of the position corresponding with the dielectric center R/4 of distance.As a result, from dielectric peripheral part plasma (at first edge) that begins to light a fire.
As an example, if the frequency f=2.45 * 109Hz of the microwave of supplying with from antenna, and constitute the quartz that dielectric material is DIELECTRIC CONSTANTS r=3.8, then the groove width w of groove satisfies 33mm≤w≤93mm.
Interior all side wall surfaces of expectation groove and at least one side in the outer circumferential side wall are the inclined planes, and this inclined plane is inclined to and makes dielectric gauge change continuously.Expect that more antenna is provided with a plurality of slits that connect along its thickness direction.In addition, a plurality of slits are positioned in the vertical top on inclined plane.Therefore, through the slit to the inclined plane radiated microwaves.If the frequency at any one position microwave on inclined plane is consistent with the gauge of dielectric plate, then the electric field strength of dielectric bottom surface increases.Thereby plasma igniting property improves with stability.
Expect a plurality of slits with respect to the center that the connects antenna direction identical with identical angle tilt with the straight line edge in each slit.Therefore, the E/R homogeneous that becomes that distributes.
According to the disclosure,, can obtain to have the apparatus for processing plasma of plasma igniting property with the stability of further raising through above inclined plane vertical, disposing the slit.
In addition, according to the disclosure,, can obtain to have the apparatus for processing plasma of the plasma igniting property of further raising through limit the width of groove based on dielectric dielectric constant.
Description of drawings
Explanation through below in conjunction with accompanying drawing can be understood the disclosure best:
Fig. 1 is the cutaway view according to the apparatus for processing plasma of an embodiment of the invention;
Fig. 2 is dielectric profile shown in Figure 1;
Fig. 3 is the vertical view that the slot antenna overlapping with dielectric shown in Figure 1 (slotantenna) is shown;
Fig. 4 illustrates dielectric electric field strength shown in Figure 2;
Fig. 5 illustrates the electric field strength under the situation that groove width is set to about 71mm;
Fig. 6 illustrates the electric field strength under the situation that groove width is set to about 61mm;
Fig. 7 illustrates the electric field strength under the situation that groove width is set to about 56mm;
Fig. 8 illustrates the electric field strength under the situation that groove width is set to about 51mm;
Fig. 9 illustrates the electric field strength under the situation that groove width is set to about 46mm;
Figure 10 illustrates the electric field strength under the situation that groove width is set to about 41mm;
Figure 11 illustrates the electric field strength under the situation that groove width is set to about 36mm;
Figure 12 illustrates dielectric profile of comparative example 1;
Figure 13 illustrates dielectric profile of comparative example 2;
Figure 14 illustrates dielectric profile of comparative example 3;
Figure 15 is the figure that the electron number distribution of embodiment 1 is shown;
Figure 16 is the figure that the electron number distribution of comparative example 1 is shown;
Figure 17 is the figure that the electron number distribution of comparative example 2 is shown;
Figure 18 is the figure that the electron number distribution of comparative example 3 is shown;
Figure 19 is the figure that the E/R distribution of embodiment 1 is shown;
Figure 20 is the figure that the E/R distribution of comparative example 1 is shown;
Figure 21 is the figure that the E/R distribution of comparative example 2 is shown;
Figure 22 is the figure that the E/R distribution of comparative example 3 is shown;
Figure 23 is dielectric profile of comparative example 4;
Figure 24 is slot antenna and the dielectric vertical view that the comparative example 4 that overlaps each other is shown;
Figure 25 is the vertical view that the slot antenna of the dielectric that overlaps each other and comparative example 5 is shown;
Figure 26 is the figure that the E/R distribution of embodiment 1 is shown;
Figure 27 is the figure that the E/R distribution of comparative example 5 is shown.
Embodiment
Hereinafter, will be referring to figs. 1 through Fig. 3 explanation apparatus for processing plasma 11 according to the embodiment of the present invention.Fig. 1 illustrates apparatus for processing plasma 11; Fig. 2 illustrates the cutaway view of dielectric 15; Fig. 3 illustrates the vertical view of the slot antenna that overlaps each other 24 and dielectric 15.At first, with reference to Fig. 1, apparatus for processing plasma 11 comprises: process chamber 12, and it forms the Cement Composite Treated by Plasma space S; Dielectric 15; Microwave feed unit 18; And exhaust unit 26.
Dielectric 15 is discoid component of being processed by quartz and the open top that is arranged to seal process chamber 12.In addition, being used for airtight sealing handles the containment member 12a of space S and is installed in the contact-making surface between process chamber 12 and the dielectric 15.
The structure of dielectric 15 will at length be described with reference to Fig. 2 now.The bottom surface of dielectric 15 is provided with endless groove 16 and is used to protect the not skirt section 17 of subject plasma effect of process chamber 12.
The side wall surface 16a and the 16b of groove 16 form the inclined plane, and this inclined plane is inclined to and makes the gauge of dielectric 15 change continuously.In this execution mode, each Fang Jun among interior all side wall surface 16a and the outer circumferential side wall 16b has taper seat (side wall surface of circular cone) shape, that is, its cross sectional shape is a straight line.Yet its shape is not limited thereto, but can have curved section shape (for example, the rake 34c of Figure 23).
In addition, suppose that the zone of the center R/4 (R representes the radius of dielectric 15) apart from dielectric 15 is defined as middle section, and the exterior lateral area of this middle section is defined as fringe region, then groove 16 is set in the fringe region of dielectric 15.That is to say that the internal diameter of groove 16 is greater than R/2.
In addition, in this execution mode, the diameter of dielectric 15 is set to about 458mm, and the internal diameter of groove 16 is set to about 190mm; The external diameter of groove 16 is set to about 381mm; The groove width w of groove 16 (width of diapire) is set to about 66mm; Thickness at the dielectric 15 of middle section is set to about 30mm; The thickness of dielectric 15 that is positioned at the diapire place of groove 16 is set to about 15mm; Angle between the bottom surface of middle section and the interior all side wall surface 16a is set to about 45 degree, and the angle between the bottom surface of middle section and the outer circumferential side wall 16b is set to about 60 degree.
Here, calculate the theoretical value w of the groove width (width of diapire) of groove 16 by following mathematical expression 1
0, wherein, c, f and ε r represent the frequency of the light velocity, microwave respectively and constitute the dielectric constant of dielectric material.
[mathematical expression 1]
In this execution mode, because light velocity c is 2.99792458 * 10
11(mm/s), the frequency f of microwave is 2.45 * 10
9(Hz) and the DIELECTRIC CONSTANTS r that constitutes the quartz of dielectric 15 be 3.8, therefore, w
0Be about 63mm.
In addition, for the groove width w of reality, allow theoretical value w
0Residual quantity (margin) approximately ± 50%, groove width w can be set in the scope that satisfies mathematical expression 2, that is to say, in this execution mode, groove width w is set in the scope of about 33mm≤w≤93mm.
[mathematical expression 2]
In addition, although be that example has been explained above-mentioned execution mode as the material that constitutes dielectric 15, the invention is not restricted to this, but can also use for example like potteries such as AlN (having about dielectric constant of 9.5 to 9.6) to adopt quartzy.In this case, the groove width w of groove 16 is in the scope of about 20mm≤w≤60mm.
With reference to Fig. 3, if dielectric 15 overlaps each other with slot antenna 24, then at least some parts in slit 25 are positioned at the vertical top as all side wall surface 16a and the outer circumferential side wall 16b on inclined plane.In this execution mode, slit 25 be divided into the vertical top that is positioned at middle section the first slit group 25a, be positioned at the vertical top of all side wall surface 16a the second slit group 25b, be positioned at the 3rd slit group 25c and the Fpir Crevices crack group 25d that is positioned at the vertical top of outer circumferential side wall 16b of vertical top of the diapire of groove 16.
In addition, about the layout in slit 25, with respect to the straight line direction in edge (clockwise direction) in the center that connects slot antenna 24 and each slit 25 with equal angular θ
1The slit (the first and the 3rd slit group 25a and 25c) that tilts and in opposite direction (counterclockwise) with equal angular θ
2The slit that tilts (second and Fpir Crevices crack group 25b and 25d) is along diametric(al) alternate configurations (this configuration is called as " radial transmission line slit ").
Now, the action that explanation is had the apparatus for processing plasma 11 of above-mentioned structure.
At first, on pedestal 13, semiconductor wafer W is installed.During Cement Composite Treated by Plasma,, and apply high frequency bias to semiconductor wafer W from AC power 13a by the surface temperature of pedestal 13 control semiconductor wafer W.
Subsequently, 14 to processing space S supply processing gas from the gas access, and discharge remaining processing gas by exhaust unit 26.Therefore, can make the inside of handling space S remain on the stress level of appointment.
Then, when the microwave that produces source 19 generations from microwave propagates into dielectric 15 via load matched device 20, coaxial waveguide 21, wavelength reduction plate 22 and slot antenna 24, produce electric field in the bottom surface of dielectric 15.As a result, handle processing gas in the space S by ionization and be energized plasma.Through selecting to handle the kind of gas, can carry out like various Cement Composite Treated by Plasma such as etch processes, ashing treatment (ashingprocess), film forming processing semiconductor wafer W.
Now, will be with reference to the variation of Fig. 4 to Figure 11 explanation electric field strength relevant with the variation of the groove width w of groove 16.Fig. 4 is the figure that the electric field strength in the execution mode that groove width w shown in Figure 2 is set to about 66mm is shown.Fig. 5 to Figure 11 provides the figure that the electric field strength under the situation that groove width w is set to about 71mm (Fig. 5), 61mm (Fig. 6), 56mm (Fig. 7), 51mm (Fig. 8), 46mm (Fig. 9), 41mm (Figure 10) and 36mm (Figure 11) respectively is shown.In addition, in each secondary figure of Fig. 4 to Figure 11, along with electric field strength increases, color becomes brighter (lighter), and along with electric field strength reduces, color becomes more black (darker).
With reference to Fig. 4 to Figure 11, find that the electric field strength in all dielectrics 15 is equal to, or greater than predetermined value.In addition, find that also groove width w is that the dielectric 15 of about 66mm (Fig. 4) has the highest electric field strength, and along with the groove width w of groove 16 increases or reduces from about 66mm, electric field strength reduces.
That is to say,, make microwave, cause the electric field strength of the bottom surface of dielectric 15 to strengthen along the Width resonance of groove 16 through in the scope of mathematical expression 2, promptly in the scope of the about 33mm≤w≤93mm of this execution mode, limit groove width w.As a result, can obtain to handle required plasma igniting property.
Especially, be in the dielectric 15 of about 66mm (Fig. 4), 71mm (Fig. 5) and 61mm (Fig. 6) in groove width, observe with certain interval and have part with extra high electric field strength.That is to say; Through the groove width w with dielectric 15 be limited to groove width with about 66mm be benchmark approximately ± scope of 5mm (± 7.5%) in; Even be in the inside of handling space S under the situation of low pressure (for example approximately below the 50mT), also can greatly improve the plasma igniting property of apparatus for processing plasma 11.
In addition, be equal to or less than in each dielectric 15 of about 56mm, even find that electric field strength neither be very high in the position of groove 16 in groove width.Using under the situation of these dielectrics 15, thinking: though be that high pressure (more than for example about 100mT) still can be lighted plasma fully through the inner setting that will handle space S,, under environment under low pressure, plasma igniting property is with deterioration.
In addition, can attempt groove width w is increased to above 71mm though consider the resonance of microwave,, according to the diameter of dielectric 15, the upper limit of groove width w also is restricted.That is to say,, intensity like dielectric 15 then possibly occur and problem such as reduce if groove width w becomes excessive with respect to the diameter of dielectric 15.
In addition, (Fig. 4 to Figure 11) in all cases finds that electric field strength is high in the position of groove 16, and along with the position away from groove 16, electric field strength reduces.Thereby, can be based on the Position Control plasma igniting starting point of groove 16.Particularly, if groove 16 is arranged on the middle section of dielectric 15, then begin plasma igniting (at first central authorities) from middle section.In addition, if groove 16 is arranged on the fringe region of dielectric 15, then begin plasma igniting (at first edge) from fringe region.
Now, will be with reference to the variation of Fig. 2 and Figure 12 to Figure 22 explanation according to the plasma homogeneity of the variation of the position of groove 16 or size.Fig. 2 and Figure 12 to Figure 14 are the figure (comparative example, 1 to 3) that dielectric shape is shown; Figure 15 to Figure 18 is the figure that the distribution of the electron number Ne when using each dielectric is shown; Figure 19 to Figure 22 is the figure that the distribution of the etch-rate (E/R) when using each dielectric is shown.
At first, embodiment 1 is provided with dielectric shown in Figure 2 15.The dielectric 31 (Figure 12) of comparative example 1 comprises internal circle groove 31a that is arranged on middle section and the circumferential groove 31b that is arranged on fringe region.The dielectric 32 (Figure 13) of comparative example 2 is provided with the groove 32a (external diameter of groove 32a is consistent with the external diameter of groove 16) that groove width is narrower than the groove width of groove 16 and biased outward is located.The dielectric 33 (Figure 14) of comparative example 3 is provided with the groove 33a (internal diameter of groove 33a is consistent with the internal diameter of groove 16) that groove width is narrower than the groove width of groove 16 and locate the deflection inboard.In addition, the internal circle groove in the comparative example 1 is different from the groove among the present invention.
With reference to Figure 15 to Figure 18, in all dielectrics, electron number Ne is tending towards many at middle section, and along with reducing towards fringe region electron number Ne.Especially, in comparative example 1, observe the big difference (Figure 16) of the electron number Ne between middle section and the fringe region.Therefore, only expect edge region and groove is not set at middle section.
In addition, in comparative example 3, although electron number Ne in the inboard of groove 33a (± 100mm) be homogeneous,, observe electron number Ne in the outside of groove 33a and reduce (Figure 18) rapidly.In addition, in embodiment 1 and comparative example 2, up to the outer path position of groove 16 and 32a (± 190mm) electron number Ne is a homogeneous.Therefore, be desirably in dielectric more lateral arrangement of grooves.
In addition, the electron number Ne maximum (Figure 15) in the middle section of discovery embodiment 1.More specifically; Electron number Ne in the middle section of comparative example 2 equals about 60% (Figure 15 and Figure 17) of the electron number Ne in the middle section of embodiment 1, and the electron number Ne in the middle section of comparative example 3 equals about 70% (Figure 15 and Figure 18) of the electron number Ne in the middle section of embodiment 1.Therefore, expectation is set the groove width of groove for and is equal to, or greater than certain value (being equal to, or greater than about 61mm according to Fig. 4 to Figure 11).
Now,, find the homogeneous (Figure 19) of E/R among the embodiment 1 with reference to Figure 19 to Figure 22, and the homogeneous (Figure 20) least of the E/R in the comparative example 1.In addition; If also find near middle section arrangement of grooves (comparative example 1 and 3); Then the E/R of middle section is tending towards than the E/R of fringe region high (Figure 20 and Figure 22), and if the area arrangements groove that keeps to the side (comparative example 2), then the E/R of fringe region is tending towards the E/R high (Figure 21) than middle section.
The variation that will concern about the position between slit 25 and inclined plane 16a and the 16b with reference to Fig. 3, Figure 23 and Figure 24 and table 1 and table 2 explanation plasma igniting property subsequently.In addition, Figure 23 illustrates the dielectric 34 of comparative example 4, and Figure 24 provides the vertical view that the dielectric that overlaps each other 34 and slot antenna 24 are shown.Table 1 and table 2 are illustrated in microwave and export and handle the plasma igniting property under the situation of the pressure variation in the space S.
With reference to Figure 23, about the dielectric 34 of comparative example 4, the thinner thickness of the middle section 34a on its bottom surface, and the thickness of fringe region 34b is thicker.In addition, thickness continually varying rake 34c is set between middle section 34a and fringe region 34b.With reference to Figure 24, all slits 25 are configured in the inboard of rake 34c, promptly are configured among the smooth middle section 34a.
Table 1 illustrates through microwave output (500W, 1000W, 1500W, 2000W, 2200W and 3000W) and the combination of handling the pressure (5mT, 20mT, 30mT, 50mT and 100mT) in the space S and observes the result of the plasma igniting property of embodiment 1 (Fig. 2 and Fig. 3).Table 2 provides comparative example 4 (Figure 23 and Figure 24) is carried out and the similar result of experiment of above-mentioned experiment.In these tables, the good plasma igniting property of zero expression; But △ representes that plasma is lighted a fire is unstable; * expression plasma is not lighted a fire;-be illustrated under the corresponding condition and do not experimentize.
In embodiment 1, find: under all combinations of the pressure in microwave output and processing space S, plasma igniting property good (table 1).In addition, in comparative example 4, find: although along with microwave output and the pressure of handling in the space S increase, the raising of plasma igniting property,, whole plasma igniting property low (table 2).
Therefore, aspect plasma igniting property, be desirably in the inclined plane, promptly in the vertical top of periphery side wall surface 16a and 16b form slit 25.If the wavelength at any one position microwave on inclined plane becomes consistent with the gauge of dielectric plate, then the electric field strength of dielectric bottom surface improves.As a result, can improve plasma igniting property and stability.This is little and handle under the low situation of pressure in the space S effective especially in microwave output.
[table 1]
| ? | 5mT | 20mT | 30mT | 50mT | 100mT |
| 500W | - | ○ | - | - | - |
| 1000W | - | ○ | - | - | - |
| 1500W | - | - | ○ | - | - |
| 2000W | ○ | ○ | - | ○ | ○ |
| 2200W | ○ | - | ○ | ○ | ○ |
| 3000W | - | - | ○ | - | - |
[table 2]
| ? | 5mT | 20mT | 30mT | 50mT | 100mT |
| 500W | - | × | - | - | - |
| 1000W | - | × | - | - | - |
| 1500W | - | - | × | - | - |
| 2000W | × | × | - | △ | ○ |
| 2200W | × | - | × | △ | ○ |
| 3000W | - | - | △ | - | - |
Now, will the configuration in slit 25 and the relation between the E/R be described with reference to Fig. 3 and Figure 25 to Figure 27.Figure 25 is the vertical view that the dielectric that overlaps each other 15 and the slot antenna 35 of comparative example 5 are shown, and Figure 26 and Figure 27 illustrate the E/R distribution of embodiment 1 and comparative example 5.
With reference to Figure 25, in the slot antenna 35 of comparative example 5, omit first slit group 25a shown in Figure 3 and the 3rd slit group 25c.That is to say, be arranged on all slits 36 in the slot antenna 35 and all be arranged in inclined plane, i.e. each side's of periphery side wall surface 16a and 16b vertical top.In addition, all slit 36 with respect to the center that connects slot antenna 35 direction identical with the straight line edge in each slit 36 with identical angle tilt (this configuration is called as " parallel slit ").
With reference to Figure 26 and Figure 27, the E/R in the discovery comparative example 5 is homogeneous a little more.Therefore, consider the homogeneity of E/R, the expectation only zone above inclined plane vertical is provided with the slit.
Above-mentioned explanation of the present invention is to provide for illustrative purpose, it should be appreciated by those skilled in the art that: under the situation that does not change technical conceive of the present invention and inner characteristic, can carry out various modifications and modification to the present invention.Thereby, be clear that above-mentioned execution mode all is exemplary in all respects and does not limit the present invention.
When being used for apparatus for processing plasma, the disclosure is favourable.
Detailed description appended claims rather than execution mode limits scope of the present invention.Be appreciated that all modified examples and the execution mode of conceiving by the implication and the scope of claims and be equal to all and comprise within the scope of the invention.
Claims (6)
1. apparatus for processing plasma, it comprises:
Process chamber, it has open top;
Dielectric has the inclined plane on its bottom surface, make said dielectric gauge change continuously, and this dielectric is arranged to seal the said open top of said process chamber; And
Antenna, it is disposed on said dielectric end face, and be used for supplying with microwave, thereby produce plasma in said dielectric bottom surface to said dielectric,
Wherein, said antenna is provided with a plurality of slits of the vertical top that is positioned at said inclined plane.
2. apparatus for processing plasma according to claim 1 is characterized in that, forms endless groove in said dielectric said bottom surface, and said inclined plane is used as the interior all side wall surfaces and the outer circumferential side wall of said endless groove, and
Said a plurality of slit be positioned in said in each side's vertical top in all side wall surfaces and the said outer circumferential side wall.
3. apparatus for processing plasma according to claim 1 is characterized in that said inclined plane is a taper seat.
4. apparatus for processing plasma according to claim 1 is characterized in that, said a plurality of slits with respect to the center that the connects said antenna direction identical with the straight line edge in each slit with identical angle tilt.
5. apparatus for processing plasma, it comprises:
Process chamber, it has open top;
Dielectric has endless groove on its bottom surface, and this dielectric is arranged to seal the said open top of said process chamber; And
Antenna, it is used for supplying with microwave to said dielectric, thereby produces plasma in said dielectric bottom surface,
Wherein, if the frequency of the light velocity, microwave and the dielectric constant that constitutes said dielectric material are respectively c, f and ε r, then the width w of the diapire of said groove satisfies following mathematical expression 1:
[mathematical expression 1]
Interior all side wall surfaces of said groove and at least one side in the outer circumferential side wall are the inclined planes, and this inclined plane is inclined to and makes said dielectric gauge change continuously,
Said antenna is provided with a plurality of slits that connect along its thickness direction, and
Said a plurality of slit is positioned in the vertical top on said inclined plane.
6. apparatus for processing plasma according to claim 5 is characterized in that, said a plurality of slits with respect to the center that the connects said antenna direction identical with the straight line edge in each slit with identical angle tilt.
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| JP2009026423A JP5369733B2 (en) | 2008-02-27 | 2009-02-06 | Plasma processing equipment |
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| US8988012B2 (en) | 2010-03-31 | 2015-03-24 | Tokyo Electron Limited | Dielectric window for plasma processing apparatus, plasma processing apparatus and method for mounting dielectric window for plasma processing apparatus |
| JP5606821B2 (en) * | 2010-08-04 | 2014-10-15 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR20120035559A (en) * | 2010-10-06 | 2012-04-16 | 주식회사 유진테크 | Substrate processing apparatus including semicircle-type antenna |
| JP2014075234A (en) * | 2012-10-03 | 2014-04-24 | Tokyo Electron Ltd | Antenna and plasma processing apparatus |
| JP6524753B2 (en) * | 2015-03-30 | 2019-06-05 | 東京エレクトロン株式会社 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM |
| JP2019008945A (en) * | 2017-06-22 | 2019-01-17 | 東京エレクトロン株式会社 | Antenna and plasma processing apparatus |
| CN111048392B (en) * | 2019-11-22 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Plasma process equipment |
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2009
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- 2009-02-09 CN CN2009100069203A patent/CN101505574B/en not_active Expired - Fee Related
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| JP2001167900A (en) * | 1999-12-08 | 2001-06-22 | Rohm Co Ltd | Plasma treatment apparatus |
| WO2002080252A1 (en) * | 2001-03-28 | 2002-10-10 | Tokyo Electron Limited | Plasma processing device |
| CN1846300A (en) * | 2003-09-04 | 2006-10-11 | 东京毅力科创株式会社 | Plasma processing device |
| CN101002509A (en) * | 2004-07-23 | 2007-07-18 | 东京毅力科创株式会社 | Plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5407388B2 (en) | 2014-02-05 |
| JP2009212085A (en) | 2009-09-17 |
| CN101505574A (en) | 2009-08-12 |
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