CN1846300A - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
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- CN1846300A CN1846300A CN 200480025471 CN200480025471A CN1846300A CN 1846300 A CN1846300 A CN 1846300A CN 200480025471 CN200480025471 CN 200480025471 CN 200480025471 A CN200480025471 A CN 200480025471A CN 1846300 A CN1846300 A CN 1846300A
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Abstract
A plasma processing device, wherein an antenna part (3) driven by microwaves to generate electromagnetic field is disposed in an opening part at the top of a chamber (1), a top board (4) sealing the opening part of the chamber (1) is installed under the antenna part (3), a ring-shaped projected line (41) is formed on the lower surface of the top board (4), and the thickness of the projected line in the radial direction is continuously varied in a tapered shape to oscillate any part of the projected line in any conditions of plasma. Since the same effect can be provided as in a case in which top boards with different thicknesses are prepared by preparing merely one type of the top board, the plasma absorbing efficiency of the top board can be remarkably increased, and the plasma can be generated stably in a high to low pressure range.
Description
Technical field
The present invention relates to plasma treatment appts, particularly radiate the microwave that offers antenna and produce isoionic plasma treatment appts thus in chamber via top board, this top board is formed by the dielectric that the peristome in the chamber is sealed.
Background technology
In recent years, be accompanied by the densification and the microminiaturization of semiconductor device, in the manufacturing process of semiconductor device, use plasma treatment appts in order to carry out film forming, etching, polishing etc. to handle.Particularly, use microwave to produce in the isoionic microwave plasma processing apparatus, under the condition of the pressure ratio lower (high vacuum) of about 0.1-10Pa, also can produce plasma reliably.Therefore, for example frequency of utilization is that the microwave plasma processing apparatus of the microwave of 2.45GHz receives publicity.
Figure 18 is the sectional view of an example of this existing plasma treatment appts.In Figure 18, plasma treatment appts comprises: be used to receive and keep substrate 11 and to substrate 11 carry out predetermined process chamber 1, be used to the antenna part 3 that produces the high frequency electric source 5 of microwave and be used for radiated microwaves in chamber 1.
In chamber 1, be provided with pedestal 7, be used to support the substrate of being received and kept 11.And, on chamber 1, be connected with vacuum pump 9, be used to discharge the gas in the chamber 1.By the gas that this vacuum pump 9 is discharged in the chamber 1, importing afterwards is used for generating isoionic gas, for example argon gas under predetermined pressure limit.
In above-mentioned plasma apparatus, the microwave that is produced by high frequency electric source 5 is sent to antenna part 3 via waveguide 6.The microwave that is sent to antenna part 3 is propagated in slow wave plate 3b, and passes through frid 3c to top board 4 radiation.In top board 4, microwave produces vibration on the face direction, and propagates to periphery from central division, generates an electromagnetic field in chamber 1.By the electromagnetic field that produces in chamber 1, the argon gas disassociation forms plasma and generates zone 22 between substrate 11 and top board 4, thus the plasma treatment that substrate 11 is scheduled to.
In such plasma treatment appts, need shine plasma equably to substrate 11.But, because it is different with periphery plasma intensity at the central part of top board 4, so opening the Japanese documentation spy has following record in the 2002-299240 communique: by making top board 4 form concave and making substrate 11 and the distance of the periphery of top board 4 shortens, can compensate the decline of the plasma density of substrate 11 peripheries, under low pressure is handled, also can article on plasma keep, thereby can carry out stable plasma treatment.
In addition, opening the Japanese documentation spy has following record in the 2003-59919 communique: the sleeve pipe that forms annular on dielectric window, so that the excitation of plasma zone does not directly contact with the metal surface of container handling wall, on substrate surface, obtain uniform plasma density thus.
In plasma apparatus, in the chamber 1 that inside is depressurized,, require top board 4 that to a certain degree thickness is arranged on the face direction in order to ensure the pressure of intensity with the antagonism extraneous gas.Top board 4 is made of dielectric, forms resonance zone by microwave on dielectric, produces highfield, and forms standing wave, generates an electromagnetic field in chamber 1 by this standing wave, and plasma density uprises.There is the dielectric thickness that is suitable for producing standing wave.
Figure 19 A-Figure 19 E shows the electric-field intensity distribution relevant with the thickness of top board.Electric-field intensity distribution when the thickness that Figure 19 A shows the face direction of top board 4 is 22.8mm, the part shown in the oblique line at center is the part of electric field strength grow.Electric-field intensity distribution when Figure 19 B shows the thickness that makes top board 4 and is 27.8mm is compared with Figure 19 A, and electric-field intensity distribution is the mind-set circumferential expansion therefrom.Electric-field intensity distribution when Figure 19 C shows the thickness that makes top board 4 and is 31.6mm, electric-field intensity distribution also is distributed to periphery except that the core of top board 4, be only thickness.Electric-field intensity distribution when Figure 19 D shows the thickness that makes top board 4 and is 32.8mm, electric-field intensity distribution is only at the central part grow.Electric-field intensity distribution when Figure 19 E shows the thickness that makes top board 4 and is 37.8mm, the electric field strength grow of central part.
In plasma treatment appts shown in Figure 180, if the plasma condition to the pressure in the chamber 1 and the power of microwave etc. changes, then near the electron density the plasma surface can change, thereby the depth of invasion of plasma intrusion material can change.Because the words diffusion coefficient that pressure is reduced can increase, so near the electron density the plasma surface reduces and depth of invasion increases.As mentioned above, will change, depart from so be used to form the resonance zone of standing wave owing to change the dielectric suitable thickness of words of plasma condition.Therefore, there are the following problems: in order always to produce plasma under only state, need prepare the dielectric of all thickness corresponding with plasma condition in advance.In addition, the plasma under the low pressure is low to the absorptivity of microwave, is difficult to stably generate plasma under low pressure (20m Torr).
Summary of the invention
Therefore, the object of the present invention is to provide a kind of plasma treatment appts, this plasma treatment device can form only resonance zone according to plasma condition in top board, and all can stably produce plasma from high pressure in chamber until low pressure.
Plasma treatment appts of the present invention is characterised in that to have: receive and keep processed substrate and produce isoionic plasma generation chamber; Be configured in the peristome on plasma generation chamber top and the antenna that generates an electromagnetic field by microwave-driven; Be arranged on the bottom of antenna and on the face direction, have a top board of the peristome of uniform preset thickness and confined plasma generation chamber; And the protuberance or the recess of the taper that forms in lower surface one side of top board.
In the present invention, can thickness radially be continuously changed, thereby resonance can take place somewhere and forming only resonance zone under the plasma condition arbitrarily by the protuberance that on top board, forms or the tapering part of recess.Therefore, just can play the effect identical as long as prepare a kind of top board with the top board of preparing all thickness.Thus, isoionic absorption efficiency can be improved significantly, and all plasma can be stably produced from high pressure to low pressure.
Preferably: top board comprises the part and the thick part of wall thickness of the wall thickness that is formed by protuberance or recess, and the thickness of the part of wall thickness is elected λ/4 ± λ/8 as.
The protuberance or the recess of top board form in the following manner, by form resonance zone on the thick part of top board, can improve plasma density.
That is, protuberance or recess are included in the prominent bar of the annular that forms on the lower surface of top board, and prominent bar can form a plurality of with the centres ground of top board diametrically, and the radial thickness that perhaps prominent bar forms top board one side is thicker than the radial thickness of top one side.
Preferably: protuberance or recess are included in the conical projection that forms on the lower surface of top board, and conical projection forms below the center of top board.A plurality of so conical projections also can be set and make a plurality of conical projections be configured to annular.
Preferably: protuberance or recess comprise: the recess of a plurality of annulars, the downward first prominent bar that forms between a plurality of annular recess and the second downward prominent bar that forms in the outside of the annular recess of most peripheral.
Preferably: the wall thickness of second protuberance forms thicker than the wall thickness of first protuberance.
Preferably: the central part in antenna one side of top board is formed with recess, in recess arrangement the material different with the dielectric constant of top board is arranged.
Preferably: the concave depth of top board forms the above or λ in λ/8/more than 4.
Preferably: the central part in processed substrate one side of top board is formed with protuberance, and the wall thickness of the top board of the periphery of protuberance is λ/4 ± λ/8.
Preferably: processed substrate is a circular plate shape, when the radius that makes processed substrate is R, is formed with at least one protuberance or recess in the center radius R outside from top board.
Preferably: when the distance that makes top board and handle substrate is D, be formed with at least one protuberance or recess in inboard from the center radius D of top board.
Preferably: antenna includes that groove distributes on the whole and the frid that forms is formed with protuberance or recess on top board, and the position of the groove on this protuberance or recess and the frid is corresponding.
Description of drawings
Fig. 1 is the sectional view of the plasma treatment appts of one embodiment of the present invention;
Fig. 2 is the upward view from following observation top board shown in Figure 1;
Fig. 3 is the figure of the state that is used to illustrate that microwave is propagated in top board;
Fig. 4 illustrates to form the sectional view of the example of protuberance at the central part of top board in other execution modes of the present invention;
Fig. 5 illustrates to form the sectional view of the example of protuberance at the periphery of top board in other execution modes of the present invention;
Fig. 6 illustrates the sectional view that central part and periphery at top board in other execution modes of the present invention form the example of protuberance;
Fig. 7 illustrates to form the sectional view of the example of recess at the central part of top board in other execution modes of the present invention;
Fig. 8 illustrates to form the sectional view of the example of recess at the periphery of top board in other execution modes of the present invention;
Fig. 9 illustrates the sectional view that central part and periphery at top board in other execution modes of the present invention form the example of recess;
Figure 10 illustrates the sectional view that central part and periphery at top board in other execution modes of the present invention form the example of recess;
Figure 11 is the figure that is used to illustrate the position of the top board that forms protuberance or recess;
Figure 12 is the sectional view that the variation of the recess that forms on top board in other execution modes of the present invention is shown;
Figure 13 is the sectional view that the variation of the recess that forms on top board in other execution modes of the present invention is shown;
Figure 14 is the sectional view that the variation of the recess that forms on top board in other execution modes of the present invention is shown;
Figure 15 is the schematic diagram of the groove of frid;
Figure 16 illustrates the figure that forms the example of prominent bar with the groove of frid shown in Figure 15 accordingly on top board;
Figure 17 is the upward view from the top board of other execution modes of beneath the present invention;
Figure 18 is the sectional view of an example of existing plasma treatment appts;
Figure 19 A is the schematic diagram of the electric-field intensity distribution relevant with the thickness of top board;
Figure 19 B is the schematic diagram of the electric-field intensity distribution relevant with the thickness of top board;
Figure 19 C is the schematic diagram of the electric-field intensity distribution relevant with the thickness of top board;
Figure 19 D is the schematic diagram of the electric-field intensity distribution relevant with the thickness of top board;
Figure 19 E is the schematic diagram of the electric-field intensity distribution relevant with the thickness of top board.
Embodiment
Fig. 1 is the sectional view of the plasma treatment appts of one embodiment of the present invention, and Fig. 2 is the upward view from following observation dielectric plate shown in Figure 1.
The same with aforesaid Figure 18, plasma treatment appts has: the chamber 1 of harvesting substrate 11 and processing that substrate 11 is scheduled to and the antenna part 3 that is used for radiated microwaves in chamber 1.
The microwave that is produced by not shown high frequency electric source is transferred into antenna part 3 via waveguide 6.Be provided with top board 4 on the top of chamber 1, the peristome of these top board 4 sealed chamber 1 and constitute the part in the next door of chamber for example is provided with the seal member 14 of O type ring etc. between the next door of top board 4 and chamber 1.Antenna part 3 is configured in the top of this top board 4.Being provided with inside on the top of antenna part 3 has the coldplate 10 of flow of refrigerant.
In chamber 1, be provided with pedestal 7, be used to support the substrate of being received and kept 11.Pedestal 7 has heating function, is used for heated substrate 11.And,, on chamber 1, be connected with vacuum pump shown in Figure 180 in order to discharge the gas in the chamber 1.Discharge gas in the chamber 1 by this vacuum pump, import then and be used under predetermined pressure limit, generating isoionic gas, for example argon gas.
In above-mentioned plasma apparatus, the microwave that is produced by high frequency electric source is sent to antenna part 3 via waveguide 6.The microwave that is sent to antenna part 3 is propagated in slow wave plate 3b, and forms resonance zone by frid 3c on top board 4, thereby produces standing wave and generate an electromagnetic field in chamber 1.The electromagnetic field disassociation that argon gas is produced chamber 1 in, thus between substrate 11 and top board 4, form plasma generate regional 22, and the plasma treatment that substrate 11 is scheduled to.
In order to ensure the pressure of intensity with the antagonism extraneous gas, top board 4 forms the circular plate shape that has uniform predetermined thickness on the face direction, is formed with protuberance or recess on its lower surface.More particularly,, begin and predetermined at interval diametrically distance, be formed with prominent bar 41 with the annular of the centres of top board 4 at periphery from the periphery of top board 4 as protuberance or recess.Should prominent bar 41 vertical and inner peripheral surface forms taper with respect to the mode that top board 4 has predetermined angle with respect to the lower surface of top board 4 with outer peripheral face, its cross section forms the protuberance or the recess of rectangle.The reason that forms prominent bar 41 at the periphery of top board 4 is: microwave offers top board 4 from antenna part 3, and the plasma density of central part is closeer, and periphery is more sparse relatively therewith, so form prominent bar 41 to improve the plasma density of periphery.
Fig. 3 is the figure of the state that is used to illustrate that microwave is propagated in top board.Top board 4 comprises the part that the wall thickness that formed by prominent bar 41 is thicker and the part of wall thickness in addition, by electing the thickness of the part of wall thickness as λ/4 ± λ/8, thereby makes microwave be difficult to propagation in the part of the wall thickness of top board 4.
If its reason is described, that is because for by the electromagnetic mode in the top board, have Mode A and Mode B.Mode A exists when above when electron density becomes predetermined value, and Mode B only exists when electron density is smaller, so electron density is high when arriving to a certain degree, just has been suppressed based on the microwave propagation of Mode B.
But this depends on the thickness of top board to a great extent, and when thickness is λ/4 when above, thick more words can suppress to become high more by the lower limit of the electron density of the propagation of Mode B.When becoming λ/2 when above, owing to can relying on electron density, Mode B do not exist, so no longer can suppress propagation by Mode B.On the contrary, when being/4 when following, the lower limit of electron density that can suppress the propagation by Mode B is constant.Therefore, if consider the intensity of top board, λ/4th, only thickness.But,, just can suppress propagation substantially by Mode B as long as in the scope of ± λ/8.
The microwave that offers antenna part 3 radiates downwards from the groove of antenna part 3, and is reflected in top board 4 as shown in Figure 3, vibrates on the face direction by the repeated reflection in top board 4, forms resonance zone and also becomes standing wave.The microwave that enters projecting strip part 41 is by the sidewall multipath reflection of projecting strip part 41 inside and be stored in the top board 4, is difficult to enter plasma and generates zone 22, and therefore, microwave is stored in projecting strip part easily and divides in 41.Thus, by forming the plasma density that projecting strip part 41 can improve periphery.Prominent bar 41 parts constitute resonance zone at the peripheral part of top board 4, and microwave is upwards vibration in the footpath vertical with the face direction of top board 4.
Prominent bar 41 forms the thick and thin taper of radial thickness of top one side of the radial thickness of top board 4 one sides, and therefore the part of the consistency of thickness of the amplitude of vibration and prominent bar 41 certainly exists diametrically.That is, prominent bar 41 constitutes resonance zone at the peripheral part of top board 4, and resonance zone automatically moves up and down according to plasma density, therefore always exists under isoionic any condition and resonance takes place somewhere.
Thus, owing to can form resonance zone in top board 4, so can produce highfield and form standing wave, plasma density can improve, and all can stably generate plasma from high pressure to low pressure.
And this prominent bar 41 also can all form taper in outer peripheral face one side and inner peripheral surface one side.In addition, can select the position or the shape of the prominent bar 41 of configuration arbitrarily according to the thickness of top board 4.
Open aforesaid Japanese documentation spy and to record the top board that forms dome-shaped in the 2002-299240 communique, when being domed shape, directly upwards significantly move at the resonant fields place, and move thereupon in the place that plasma is strong, and uniformity changes.Relative therewith, difference of the present invention is: concentrate plasma by prominent bar 41 near the periphery of top board 4 or center, can carry out inhomogeneity adjustment thus.
Fig. 4 is the sectional view of variation of the protuberance that forms on top board of other execution modes of the present invention, forms the conical projection 42 as protuberance downwards in the bottom of the approximate centre of top board 4.In this embodiment owing to can form resonance zone at the central part periphery that forms projection 42, so can improve the plasma density of central part periphery, when the electric field strength of the central part periphery of top board 4 hour very effective.
In Fig. 5, form the prominent bar 43 of annular at the periphery of top board 4, and make outer peripheral face and inner peripheral surface all form taper.By making outer peripheral face and inner peripheral surface all form taper, can make the difference of radial thickness of the radial thickness of top board one side of prominent bar 43 and top one side bigger, therefore resonance zone can be enlarged, and this peripheral plasma density can be improved in the periphery formation of prominent bar 43.
In Fig. 6, except the prominent bar 41 of periphery shown in Figure 2, form radially the thickness conical projection 44 thicker than prominent bar 41 at central part.In this embodiment, form resonance zone by prominent bar 41 at periphery, form resonance zone by projection 44 at central part simultaneously, even import the microwave of the amplitude bigger thus than the radial thickness of prominent bar 41, owing to can form resonance zone at projection 44 places of central authorities, so can improve the plasma density of central part.
Fig. 7 be other execution modes of the present invention formation the sectional view of top board of recess, be provided with recess 401 in the substantial middle portion of top board 4 to the circle of under shed.The inner peripheral surface of recess 401 forms taper according to the big mode of opening diameter change of bottom.By this recess 401, formed protuberance 402 in its outside.In this example owing to form resonance zone in the thicker part of the wall thickness of protuberance 402, so can improve the plasma density of this part, when the electric field density of the peripheral part of top board 4 hour very effective.
In Fig. 8, be provided with annular recess 403 with one heart with top board 4.The outer peripheral face of recess 403 and inner peripheral surface form cone shape according to the big mode of opening diameter change of bottom.By this recess 403, side has formed downward protuberance 404 within it, has formed prominent bar 405 in its outside.In this example, owing to form resonance zone in the thicker part of the wall thickness of protuberance 404 and prominent bar 405, so can improve the plasma density of these parts.
In Fig. 9, be formed with to the recess 406 of the circle of under shed and be formed with the recess 407 of annular in the outside of recess 406 in the substantial middle portion of top board 4.The outer peripheral face of recess 406 forms taper shape according to the big mode of opening diameter change of bottom, and is the same with the recess 403 of Fig. 8, and the outer peripheral face of recess 407 and inner peripheral surface form taper according to the big mode of opening diameter change of bottom.In this example, formed prominent bar 408, formed prominent bar 409 in the outside of recess 407 in the outside of recess 406, owing to can thicker part form resonance zone at the wall thickness of prominent bar 408 and 409, so can improve the plasma density of these parts.
Figure 10 is the sectional view of variation of the recess that forms on top board of other execution modes of the present invention.In the present embodiment, replace the recess 406 of example shown in Figure 9 to be formed with recess 410 and annular recess 411 with annular recess 407.Recess 410 and 411 is under shed, and the outer peripheral face of recess 410 is not to form taper but form circular shape, and the outer peripheral face of recess 411 and inner peripheral surface also form circular shape.Therefore, taper of the present invention is also thought and is comprised circular shape.
The thickness of top board 4 changes with circular shape as mentioned above, the same with Fig. 9 thus, between the recess 411 of recess 410 and annular, formed prominent bar 412, formed prominent bar 413 in the outside of recess 411, the part thicker at these wall thickness can form resonance zone, therefore can improve the plasma density of these parts.
And to the execution mode shown in Figure 10, the tapering part that forms on top board 4 is preferred to form one at least in the outside of the radius R of substrate 11 as shown in Figure 11 at Fig. 1.Thus, can make near the plasma density in substrate 11 ends can not become low.
And more preferably: if the distance of establishing between top board shown in Figure 11 4 and the substrate 11 is D, then formed tapering part preferably forms one from the center of top board 4 in the inboard of radius D at least on the top board 4.Thus, can make that near top board 4 centers plasma is unlikely to become low.
Figure 12 is the sectional view of variation of the recess that forms on top board of other execution modes of the present invention.In example shown in Figure 12, be formed with outstanding protuberance 421 downwards at the central part of top board 4, near the thickness of the top board 4 the outside of this protuberance 421 is elected λ/4 ± λ/8 as.And, be formed with recess 422 to the annular of under shed in the outside of protuberance 421, and be formed with the outstanding thicker protuberance 423 of wall thickness downwards in the outside of recess 422, except the peripheral part of protuberance 423 to be formed with the groove 424 of a plurality of annulars on the external lower surface with one heart.The inner peripheral surface of the outer peripheral face of protuberance 421 and protuberance 423 forms taper.
In this example, form the thicker protuberance 423 of wall thickness, can improve intensity by the outside at recess 422.In addition, the plasma density of these protuberance 423 parts uprises, and electric field density also uprises, and the plasma radiation becomes easy, but the groove 424 by a plurality of annulars can suppress plasma from its surface radiation, becomes the outermost perimembranous radiation that plasma never forms groove 424 easily.
And, be formed with recess 425 at the atmospheric side of antenna 3 one sides of top board 4.The degree of depth of this recess 425 is preferably formed and is λ/more than 8, is more preferably to form λ/more than 4.In recess 425, dispose atmosphere, good conductor or the material (not shown) different with the dielectric constant of top board 4.Microwave by strong reflection, at this part plasma grow often, has above configuration in order to improve this problem near the recess 425 of the central part of top board 4.If the wall thickness of the periphery of recess 425 is about λ/4, can further strengthen this effect.
And recess 425 is not limited to form at the central part of antenna 3 sides of top board 4, also can form at periphery.
In example shown in Figure 13, bottom at the central part of top board 4 is formed with outstanding protuberance 421, be formed with the recess 422 of the annular of lower openings in the outside of protuberance 421, under the lateral of recess 422, be formed with prominent bar 426, and be formed with the recess 427 of the annular of lower openings in the outside of prominent bar 426, be formed with the prominent bar 428 of outstanding annular in the outside of recess 427 downwards.The prominent bar 428 that forms at most peripheral is thicker than the wall thickness of protuberance 421 and prominent bar 426.In addition, recess 422 and 427 outer peripheral face and inner peripheral surface form taper.
In this example, by forming the mechanical strength that prominent bar 426 can keep top board 4.In addition, though all form resonance zone at prominent bar 426 and 428 places, compare with prominent bar 426, the wall thickness of prominent bar 428 parts of most peripheral forms thicklyer, can make the plasma density height of the plasma density of this part than prominent bar 426 thus.
In example shown in Figure 14, be formed with the protuberance 429 of circular plate shape downwards at the central portion of top board 4, on its lower surface, be formed with a plurality of grooves 430 with one heart, be formed with recess 431 in the outside of protuberance 429, be formed with outstanding prominent bar 432 in the outside of recess 431 downwards to the annular of under shed.Prominent bar 432 forms thicker than the wall thickness of protuberance 429.In this example, the protuberance 429 of the central portion by top board 4 makes wall thickness thicker, thereby can improve mechanical strength.Because the wall thickness of protuberance 429 is thicker, propagation easily and density uprise so plasma becomes, but by forming groove 430, plasma is difficult to radiation.And becoming at the part plasma of the wall thickness of recess 431 is difficult to propagate, thereby can improve the plasma density at prominent bar 432 places of outermost perimembranous.And, the same with Figure 12 in this example, also be formed with recess 425 at the atmospheric side of antenna 3 one sides of top board 4.In addition, as shown in the figure, recess 431 is the shapes that made up tapering part 433 and circular arc portion 434, though be the structure of having considered processability, can have same plasma control effect.
Figure 15 is the schematic diagram of the groove of frid, and Figure 16 is the schematic diagram that is formed with prominent bar with the position of groove shown in Figure 15 accordingly.That is, on the frid 3c of circular plate shape shown in Figure 15, be formed with the groove 31,32,33 that is arranged in the triple annulars on the concentric circles.The microwave of incoming wave conduit 6 radiates in chamber 1 by the groove 31,32,33 of frid 3c, thereby generates an electromagnetic field.Therefore, in top board 4, it is maximum that the electric field strength of the part corresponding with the position of groove 31,32,33 becomes.
Therefore, as shown in figure 16, be formed with a plurality of prominent bar 45,46,47 of annular accordingly with each position of each groove 31,32,33.The same with prominent bar 41 shown in Figure 1, these prominent bars 45,46,47 form lower surface vertical and inner peripheral surface with respect to top board 4 have predetermined angle the taper of outer peripheral face with respect to top board 4, and its outer peripheral face also can form taper.In top board 4, the electric field strength grow of the part corresponding with each position of each groove 31,32,33 by forming resonance zone in these parts, can make plasma even.
Figure 17 is the upward view from the top board of other execution modes of beneath the present invention.In aforesaid execution mode shown in Figure 16, be formed with the prominent bar 45,46,47 of annular accordingly with the position of each groove 31,32,33 of frid 3c, relative therewith, in the present embodiment, dispose the projection 48 of the little cone shape of a plurality of independences separately and diameter accordingly with each position of each groove 31,32,33.Even in the present embodiment, also can the resonance of the highfield intensity that produces at each groove 31,32,33 places be disperseed by a plurality of projections 48.
In the present invention, the diameter that the diameter that forms 21mm, top board 4 when the thickness of top board 4 forms 280mm, prominent bar 41 forms 220mm and projecting height when forming 22mm, even the output that becomes 1-100Torr, microwave as for example isoionic pressure of plasma condition becomes 100-3000W, also can stably produce plasma.
Above with reference to description of drawings an embodiment of the invention, but the invention is not restricted to illustrated execution mode.In the scope identical, perhaps in the scope that is equal to, can carry out various changes to illustrated execution mode with the present invention.
Industrial applicibility
The present invention can be applicable in the following plasma treatment appts, by microwave-driven and produce electromagnetism The bottom of antenna part 3 be provided with the top board 4 that the peristome to chamber 1 seals, at top board 4 lower surface one side is provided with the ridge 41 of annular and its thickness is radially changed continuously with taper, Thereby under isoionic any condition, all can produce somewhere resonance, thus the equal energy from high pressure to low pressure Stably produce plasma.
Claims
(according to the modification of the 19th of treaty)
1. (revise afterwards) a kind of plasma treatment appts, it comprises:
The plasma generation chamber, it receives and keeps processed substrate, and produces plasma;
Antenna, it is configured in the peristome on described plasma generation chamber top, and is generated an electromagnetic field by microwave-driven;
Top board, it is arranged on the bottom of described antenna, and has uniform predetermined thickness on the face direction, and seals the peristome of described plasma generation chamber;
Wherein, described top board has concaveconvex shape in its lower surface one side,
The protuberance of described concaveconvex shape is included in the prominent bar that forms annular on the lower surface of described top board.
2. (revise afterwards) plasma treatment appts as claimed in claim 1, wherein, thereby described top board is because described concaveconvex shape comprises the part and the thick part of wall thickness of wall thickness,
The thickness of the part of described wall thickness is chosen as λ/4 ± λ/8.
3. (deletion)
4. (revise afterwards) plasma treatment appts as claimed in claim 1, wherein, described top board is a circular plate shape,
With the centres of described top board ground, be formed with a plurality of described prominent bars diametrically.
5. (deletion)
6. (revise afterwards) plasma treatment appts as claimed in claim 1 or 2, wherein, the protuberance of described concaveconvex shape is included in the projection of the cone shape that forms on the lower surface of described top board.
7. (revise back) plasma treatment appts as claimed in claim 6, wherein, described conical projection is formed on the lower surface at center of described top board.
8. (revise afterwards) a kind of plasma treatment appts, it comprises:
The plasma generation chamber, it receives and keeps processed substrate, and produces plasma;
Antenna, it is configured in the peristome on described plasma generation chamber top, and is generated an electromagnetic field by microwave-driven;
Top board, it is arranged on the bottom of described antenna, and has uniform predetermined thickness on the face direction, and seals the peristome of described plasma generation chamber;
Wherein, described top board has concaveconvex shape in its lower surface one side,
The protuberance of described concaveconvex shape is included in the prominent bar that forms a plurality of cone shapes of annular on the lower surface of described top board.
9. (revise afterwards) plasma treatment appts as claimed in claim 8, wherein, described concaveconvex shape comprises: the recess of described a plurality of annulars, the downward first prominent bar that forms between described a plurality of annular recess and the second downward prominent bar that forms in the outside of the annular recess of most peripheral.
10. (after revising) plasma treatment appts as claimed in claim 9 wherein, forms described second wall thickness of dashing forward bar thicker than the wall thickness of the described first prominent bar.
11. (revise back) plasma treatment appts as claimed in claim 1 wherein, is formed with recess at the central part of antenna one side of described top board, in described recess arrangement the material different with the dielectric constant of described top board is arranged.
(12. revising the back) plasma treatment appts as claimed in claim 11, wherein, the concave depth of antenna one side of described top board forms the above degree of depth in λ/8.
(13. revising the back) plasma treatment appts as claimed in claim 11, wherein, the concave depth of antenna one side of described top board forms the above degree of depth in λ/4.
(14. revising the back) plasma treatment appts as claimed in claim 1, wherein, the protuberance of described concaveconvex shape is formed on the central part of described processed substrate one side of described top board, and the wall thickness of the top board of the peripheral part of described protuberance is λ/4 ± λ/8.
(15. revising the back) plasma treatment appts as claimed in claim 1, wherein, described processed substrate is a circular plate shape,
When the radius of establishing described processed substrate was R, the protuberance of described concaveconvex shape or recess were formed with one at least in the outside from the center radius R of described top board.
(16. revising the back) plasma treatment appts as claimed in claim 1, wherein, when the distance of establishing described top board and described processed substrate was D, the protuberance of described concaveconvex shape or recess were formed with one at least in the inboard from the center radius D of described top board.
(17. revising the back) plasma treatment appts as claimed in claim 1, wherein, described antenna comprises: thus the frid that a plurality of groove distributes and forms with predetermined pattern,
The described protuberance of described top board lower surface or recess are according to the mode of extending on the position corresponding with described predetermined pattern and form.
Statement according to the 19th modification of Patent Cooperation Treaty
The qualification of claim 3 is put in the claim 1, and with clear and definite following content: top board has concaveconvex shape in its lower surface one side, and the protuberance of concaveconvex shape is included in the up prominent bar that becomes annular of lower surface of top board.And in documents 1, the lower surface that is not disclosed in top board is provided with the prominent bar of annular.
Add the qualification of claim 1 in claim 8, clear and definite following content: top board has concaveconvex shape in its lower surface one side, and the protuberance of concaveconvex shape is included in the up a plurality of conical projections that become annular of lower surface of top board.And in documents 1, the lower surface that is not disclosed in top board is provided with a plurality of conical projections of annular.
Claims (17)
1. plasma treatment appts, it comprises:
The plasma generation chamber, it receives and keeps processed substrate, and produces plasma;
Antenna, it is configured in the peristome on described plasma generation chamber top, and is generated an electromagnetic field by microwave-driven;
Top board, it is arranged on the bottom of described antenna, and has uniform predetermined thickness on the face direction, and seals the peristome of described plasma generation chamber; And
Be formed on the lower surface protuberance one side, taper or the recess of described plate.
2. plasma treatment appts as claimed in claim 1, wherein, thereby described top board is because described protuberance or recess comprise the part and the thick part of wall thickness of wall thickness,
The thickness of the part of described wall thickness is chosen as λ/4 ± λ/8.
3. plasma treatment appts as claimed in claim 1 or 2, wherein, described protuberance or recess are included in the prominent bar that forms annular on the lower surface of described plate.
4. plasma treatment appts as claimed in claim 3, wherein, described top board is a circular plate shape,
With the centres ground of described plate, be formed with a plurality of described prominent bars diametrically.
5. as claim 3 or 4 described plasma treatment appts, wherein, the radial thickness that described prominent bar forms described top board one side is thicker than the radial thickness of top one side.
6. as each described plasma treatment appts in the claim 1 to 3, wherein, described protuberance or recess are included in the projection of the cone shape that forms on the lower surface of described plate.
7. plasma treatment appts as claimed in claim 6, wherein, described conical projection is formed on the central lower surface of described plate.
8. plasma treatment appts as claimed in claim 6, wherein, described conical projection is provided with a plurality of, and described a plurality of conical projections are configured to annular.
9. plasma treatment appts as claimed in claim 8, wherein, described protuberance or recess comprise: the recess of described a plurality of annulars, the downward first prominent bar that forms between described a plurality of annular recess and the second downward prominent bar that forms in the outside of the annular recess of most peripheral.
10. plasma treatment appts as claimed in claim 9 wherein, forms the wall thickness of described second protuberance thicker than the wall thickness of described first protuberance.
11. as each described plasma treatment appts in the claim 1 to 10, wherein, be formed with recess, the different material of dielectric constant with described plate arranged in described recess arrangement at the central part of antenna one side of described plate.
12. plasma treatment appts as claimed in claim 11, wherein, the concave depth of described top board forms the above degree of depth in λ/8.
13. plasma treatment appts as claimed in claim 11, wherein, the concave depth of described top board forms the above degree of depth in λ/4.
14. as each described plasma treatment appts in the claim 1 to 13, wherein, described protuberance is formed on the central part of described processed substrate one side of described top board, the wall thickness of the top board of the peripheral part of described protuberance is λ/4 ± λ/8.
15. as each described plasma treatment appts in the claim 1 to 14, wherein, described processed substrate is a circular plate shape,
When the radius of establishing described processed substrate was R, described protuberance or recess were formed with one at least in the outside from the center radius R of described plate.
16. as each described plasma treatment appts in the claim 1 to 15, wherein, when the distance of establishing described plate and described processed substrate was D, described protuberance or recess were formed with one at least in the inboard from the center radius D of described top board.
17. as each described plasma treatment appts in the claim 1 to 3, wherein, described antenna comprises the frid that is distributed with groove on the whole and forms,
On described top board, be formed with described protuberance or recess accordingly with the position of groove on the described frid.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP312486/2003 | 2003-09-04 | ||
| JP2003312486 | 2003-09-04 | ||
| JP159186/2004 | 2004-05-28 |
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| Publication Number | Publication Date |
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| CN1846300A true CN1846300A (en) | 2006-10-11 |
| CN100492591C CN100492591C (en) | 2009-05-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800254712A Expired - Fee Related CN100492591C (en) | 2003-09-04 | 2004-09-03 | Plasma processing device |
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| Country | Link |
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| JP (1) | JP2010258461A (en) |
| CN (1) | CN100492591C (en) |
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| JP2010258461A (en) | 2010-11-11 |
| CN100492591C (en) | 2009-05-27 |
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