CN101501797B - 具有结构化的烧结-活性表面的半成品以及它们的制造方法 - Google Patents

具有结构化的烧结-活性表面的半成品以及它们的制造方法 Download PDF

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Publication number
CN101501797B
CN101501797B CN2007800301401A CN200780030140A CN101501797B CN 101501797 B CN101501797 B CN 101501797B CN 2007800301401 A CN2007800301401 A CN 2007800301401A CN 200780030140 A CN200780030140 A CN 200780030140A CN 101501797 B CN101501797 B CN 101501797B
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China
Prior art keywords
anode conductor
capacitance
oxidation
sintering
semi
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Expired - Fee Related
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CN2007800301401A
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English (en)
Chinese (zh)
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CN101501797A (zh
Inventor
M·斯坦佐
A·沙夫
H·哈斯
H·布鲁姆
T·朗格特普
C·施尼特
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Tantalum Niobium Obisheng Innovative Materials Co ltd
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HC Starck GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
CN2007800301401A 2006-08-16 2007-08-10 具有结构化的烧结-活性表面的半成品以及它们的制造方法 Expired - Fee Related CN101501797B (zh)

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CN201210273715.5A CN102832048B (zh) 2006-08-16 2007-08-10 具有结构化的烧结-活性表面的半成品以及它们的制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006038502 2006-08-16
DE102006038502.0 2006-08-16
PCT/EP2007/058293 WO2008019992A1 (en) 2006-08-16 2007-08-10 Semifinished products with a structured sinter-active surface and a process for their production

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CN101501797A CN101501797A (zh) 2009-08-05
CN101501797B true CN101501797B (zh) 2012-12-26

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CN201210273715.5A Expired - Fee Related CN102832048B (zh) 2006-08-16 2007-08-10 具有结构化的烧结-活性表面的半成品以及它们的制造方法

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US (1) US8999500B2 (https=)
EP (1) EP2054901B1 (https=)
JP (1) JP5124578B2 (https=)
KR (1) KR101451443B1 (https=)
CN (2) CN101501797B (https=)
AU (1) AU2007286284A1 (https=)
BR (1) BRPI0715961A2 (https=)
CA (1) CA2658690A1 (https=)
DK (1) DK2054901T3 (https=)
IL (1) IL195932A (https=)
MX (1) MX2009001523A (https=)
PT (1) PT2054901T (https=)
RU (1) RU2439731C2 (https=)
TW (1) TWI447767B (https=)
WO (1) WO2008019992A1 (https=)
ZA (1) ZA200900660B (https=)

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ATE467645T1 (de) 2006-07-19 2010-05-15 Basf Se Verfahren zur herstellung wasserabsorbierender polymerpartikel mit hoher permeabilität durch polymerisation von tropfen einer monomerlösung
CN103547547B (zh) * 2011-05-13 2015-04-01 旭硝子株式会社 导电性钙铝石化合物的制造方法
US20150340159A1 (en) * 2012-06-22 2015-11-26 Showa Denko K.K. Anode body for capacitor
CN103147036B (zh) * 2012-12-20 2015-04-22 浙江易锋机械有限公司 汽车空调压缩机配件的局部渗碳方法
WO2015093155A1 (ja) * 2013-12-20 2015-06-25 昭和電工株式会社 タングステン粉、コンデンサの陽極体、及び電解コンデンサ
JP5750200B1 (ja) * 2013-12-20 2015-07-15 昭和電工株式会社 タングステン粉、コンデンサの陽極体、及び電解コンデンサ
JP6011593B2 (ja) * 2014-10-22 2016-10-19 三菱マテリアル株式会社 銅多孔質焼結体の製造方法及び銅多孔質複合部材の製造方法
JP6065059B2 (ja) 2015-06-12 2017-01-25 三菱マテリアル株式会社 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法
JP6107888B2 (ja) 2015-06-12 2017-04-05 三菱マテリアル株式会社 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法
JP6733286B2 (ja) * 2016-04-27 2020-07-29 三菱マテリアル株式会社 銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法
JP6249060B2 (ja) * 2016-07-29 2017-12-20 三菱マテリアル株式会社 銅多孔質複合部材
WO2018088574A1 (ja) * 2016-11-14 2018-05-17 株式会社村田製作所 固体電解コンデンサ素子、固体電解コンデンサ及び固体電解コンデンサ素子の製造方法
TWI837192B (zh) * 2018-10-12 2024-04-01 日商東洋鋁股份有限公司 鋁電解電容器用電極材料的製造方法
US11289276B2 (en) 2018-10-30 2022-03-29 Global Advanced Metals Japan K.K. Porous metal foil and capacitor anodes made therefrom and methods of making same
EP3959026A1 (en) * 2019-04-29 2022-03-02 Global Advanced Metals USA, Inc. A ti-zr alloy powder and anode containing the same
CN110648849B (zh) * 2019-09-26 2021-12-14 宇启材料科技南通有限公司 一种阀金属多孔体涂层电极箔及制作方法和电解电容器
CN111872401B (zh) * 2020-07-30 2022-11-08 合肥工业大学 一种odsw/tzm合金的放电等离子扩散连接方法

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US6051326A (en) * 1997-04-26 2000-04-18 Cabot Corporation Valve metal compositions and method
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WO2000067936A1 (en) 1998-05-06 2000-11-16 H.C. Starck, Inc. Metal powders produced by the reduction of the oxides with gaseous magnesium
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US6226173B1 (en) * 1999-01-26 2001-05-01 Case Western Reserve University Directionally-grown capacitor anodes
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Also Published As

Publication number Publication date
RU2009109161A (ru) 2010-09-27
TW200834622A (en) 2008-08-16
JP5124578B2 (ja) 2013-01-23
BRPI0715961A2 (pt) 2013-08-06
CN102832048B (zh) 2016-04-13
PT2054901T (pt) 2020-01-16
CN101501797A (zh) 2009-08-05
WO2008019992A1 (en) 2008-02-21
DK2054901T3 (da) 2020-01-20
EP2054901B1 (en) 2019-11-06
IL195932A0 (en) 2009-09-01
IL195932A (en) 2014-02-27
JP2010500771A (ja) 2010-01-07
RU2439731C2 (ru) 2012-01-10
EP2054901A1 (en) 2009-05-06
TWI447767B (zh) 2014-08-01
KR20090040301A (ko) 2009-04-23
ZA200900660B (en) 2010-04-28
US20100068510A1 (en) 2010-03-18
AU2007286284A1 (en) 2008-02-21
US8999500B2 (en) 2015-04-07
HK1177811A1 (zh) 2013-08-30
CA2658690A1 (en) 2008-02-21
KR101451443B1 (ko) 2014-10-15
MX2009001523A (es) 2009-02-18
CN102832048A (zh) 2012-12-19

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Effective date of registration: 20180802

Address after: Munich, Germany

Patentee after: H.C. Stark Tantalum and Niobium Co.,Ltd.

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CP03 Change of name, title or address

Address after: Goslar, Germany

Patentee after: Tantalum niobium obisheng innovative materials Co.,Ltd.

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CF01 Termination of patent right due to non-payment of annual fee