CN101501795B - 制造用于电阻器和电容器的多层结构的方法 - Google Patents
制造用于电阻器和电容器的多层结构的方法 Download PDFInfo
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- CN101501795B CN101501795B CN200680005673.XA CN200680005673A CN101501795B CN 101501795 B CN101501795 B CN 101501795B CN 200680005673 A CN200680005673 A CN 200680005673A CN 101501795 B CN101501795 B CN 101501795B
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- conductive layer
- resistance elements
- thermosetting polymer
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- 238000000034 method Methods 0.000 claims abstract description 58
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- 239000000463 material Substances 0.000 claims abstract description 27
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 5
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
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- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 2
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- 150000002148 esters Chemical class 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
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- 229910001453 nickel ion Inorganic materials 0.000 claims description 2
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- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
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- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000013425 morphometry Methods 0.000 description 1
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- 230000000246 remedial effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- NQXGLOVMOABDLI-UHFFFAOYSA-N sodium oxido(oxo)phosphanium Chemical compound [Na+].[O-][PH+]=O NQXGLOVMOABDLI-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
- H01G4/203—Fibrous material or synthetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/036—Multilayers with layers of different types
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0361—Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
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Abstract
本发明涉及一种制造用于形成电容器和电阻器的多层结构的方法,其可以用于印刷电路板和微电子装置的生产。根据本发明方法,一个或多个热固性聚合物层被直接附着到耐热薄膜层上,特别是在所述耐热薄膜将要附着于导电层的侧面上,其中所述导电层具有在其上的电阻材料层。将所述粘结剂附着到耐热薄膜而不是导电层上改进了所述制造方法,尤其是在所述导电层上形成电阻材料层。这还使所述多层结构实现了更好的精确度和均匀性。
Description
发明背景
技术领域
本发明涉及电容器、电阻器、印刷电路板、微电子装置等的形成。特别地,其涉及用于生产制备薄膜电阻-导体材料等中所用到的多层结构的方法。
相关技术的描述
由于中央处理单元(CPU)的电路设计不断地寻求获得增加的运算速度,集成电路的性能日益变得更加重要。固定这些集成电路的印刷电路板的电路设计也是很重要的。
电容器和电阻器是在印刷电路板及其他微电子学设备上的通用的元件。电容器用来稳定此类装置的操作电源供应。电容器是用来将电容引入到电路之中的装置,并且其作用主要是存储电能、阻碍直流电流、或允许交变电流的流动。其包括夹在两个导电金属层(例如铜箔)之间的绝缘材料。通常,所述绝缘材料经由粘合剂层、通过层压或通过气相沉积与所述导电金属层相连接。
迄今为止,排列印刷电路板表面上的电容器已经是常见的。但是,近年来,电容器由在多层的电路板层之内的薄的、双面的覆铜层压片所形成,从而产生了优异的特性。有了这些选择之后,现已优选形成具有嵌入型电容器的印刷电路板,以最大化所述电路板的表面面积,供其它目的使用。为了获得增强的信号传送速度,印刷电路板制造商通常在这种多层结构之内形成印刷电路板。所述电容器的电容主要依赖于所述电容器层的形状和尺寸以及所述绝缘材料的介电常数。本领域已知有各种类型的介电材料。例如,所述绝缘材料可以是气体例如空气、真空、液体、固体或其结合。每种材料具有其固有的特定性能。
供印刷电路板使用的常规电容器的性能受到某些因素的限制,例如绝缘材料有限的最小厚度(其降低了所述电容器的柔性)、可得到的电容、在所述金属箔上结合增强剂的作用、低的介电常数、以及差的绝缘强度。
期望形成用于电路板的具有高介电常数和极薄绝缘材料层的电容器,从而增强所述电容器的电容和柔性。为了优化所述电容器的性能,重要的是所使用的绝缘材料具有良好的材料性能,显示出下述性质如优越的粘着力、高的绝缘强度和良好的柔性。但是,经常地与极薄介电层相伴随的普遍问题是微小缺陷或其它结构缺陷的形成以及杂质的夹杂。这些导致了电短路。例如,美国专利5,155,655和5,161,086描述了一种用于形成电容器的方法,其中单片绝缘材料与两个导电箔一起被层压。该类型的介电层对于缺陷形成和杂质夹杂来说是很脆弱的,并且探测以及补救过程是非常消耗时间的。
美国专利No.6,693,793涉及一种具有一对导电箔和一对薄介电层的结构,其中一个介电层在每一个所述箔的表面之上。所述两个导电箔被粘附一起,从而使所述介电层经由中间的耐热薄膜层而彼此附着。相对于现有技术的电容器和印刷电路板,该电容器提供了性能上的显著改进。所述薄的介电层允许所述电容器具有更高的电容、更大的导热性和更大的柔性。所述中间耐热层阻止了在所述导电箔之间电短路的形成。
用于生产电路元件的常规方法包括将所述结构的部件以连续顺序的层而附着。但是,连续附着某些结构层具有若干缺点。例如,某些材料不能以期望的精确度和均匀性附着或形成在其它材料之上。此外,某些材料没有提供足够的强度以支持其它必须被形成或附着在其上的材料。此外,与某些材料和方法(例如电镀)有关的生产成本,使得将某些层以连续的顺序附着是不希望的。
希望提供一种形成兼具电容性的和电阻性元件的多层结构的方法,并且该方法还能克服与常规的工艺步骤有关的问题。本发明提供了一种用于形成这类多层结构的方法,其中所述多层结构用于电阻器和电容器的形成。由该方法形成的所述结构提供了高的电容、更强的导热性以及更强的柔性,同时还结合了电阻元件。所述发明的方法还在组装期间令此类结构及其组成层实现了更好的精确度和均匀性。该方法进一步地最大化了在这类多层结构生产中的成本效益。
本发明概述
本发明提供了所述形成多层结构的方法,其包含:将第一热固性聚合物层附着到第一导电层的表面;将第二热固性聚合物层附着到耐热薄膜的第一表面;提供具有形成于其表面上的电阻材料层的第二导电层;将所述电阻材料层附着到所述第二热固性聚合物上;并且将所述第一热固性聚合物附着到所述耐热薄膜层的第二表面上。
本发明还提供了一种形成多层结构的方法,其包含如下步骤:将第一热固性聚合物层附着到耐热薄膜的第一表面;将第二热固性聚合物层附着到所述耐热薄膜层的第二表面;将第一导电层附着所述第一热固性聚合物上;提供具有形成于其表面上的电阻材料层的第二导电层;并且将所述电阻材料层附着到第二热固性聚合物上。
本发明进一步地提供了一种形成多层结构的方法,其包含如下步骤:将第一热固性聚合物层附着到耐热薄膜的第一表面;将第二热固性聚合物层附着到所述耐热薄膜层的第二表面;提供具有形成于其表面上的第一电阻材料层的第一导电层;提供具有形成于其表面上的电阻材料层的第二导电层;将第一导电层附着所述第一热固性聚合物层上;并且将所述第二电阻材料层附着到第二热固性聚合物层上。
本发明更进一步提供了一种形成电容器的方法,其包含如下步骤:将第一热固性聚合物层附着到第一导电层的表面;将第二热固性聚合物层附着到耐热薄膜的第一表面;提供具有形成于其表面上的电阻材料层的第二导电层;将所述电阻材料层附着到所述第二热固性聚合物上;并且将所述第一热固性聚合物附着到所述耐热薄膜层的第二表面。
附图说明
图1是本发明方法的第一实施方案的示意图,其中所述多层结构包括一个电阻材料层。
图2是本发明方法的一个附加实施方案的示意图,其中所述多层结构包括一个电阻材料层。
图3是本发明图2方法的一个附加实施方案的示意图,其进一步地包括将附加的电阻材料层附着在所述第一热固性聚合物层和所述第一导电层之间。
具体实施方式
本发明涉及用于形成多层结构的方法,所述多层结构适于形成电阻器、电容器等。图1中显示了本发明方法的第一实施方案。根据这个方法,通过将第一热固性聚合物层4附着到第一导电层2的表面上来形成多层结构。接着,将第二热固性聚合物层8附着到耐热薄膜层6的第一表面上。然后提供第二导电层12,其具有形成于其表面上的电阻材料层10。然后将所述电阻材料层10附着到所述第二热固性聚合物8上;并且将所述第一热固性聚合物4附着到所述耐热薄膜层6的第二表面上。
在由图2所示的本发明方法的另一实施方案中,第一热固性聚合物层4被附着到耐热薄膜层6的第一表面上,并且第二热固性聚合物层8被附着到所述耐热薄膜层6的第二表面上。接着,第一导电层2被附着到所述第一热固性聚合物4上。然后提供第二导电层12,其具有形成于其表面上的电阻材料层10。然后所述电阻材料层10被附着到所述第二热固性聚合物8上。
在由图3所示的进一步的实施方案中,第一热固性聚合物层4被附着到耐热薄膜层6的第一表面上,并且第二热固性聚合物层8被附着到所述耐热薄膜6的第二表面上。接着,提供第一导电层2,其具有形成于其表面上的第一电阻材料层10。还提供了第二导电层12,其具有形成于其表面上的第二电阻材料层14。然后将所述第一电阻材料层10附着到所述第一热固性聚合物层4上;并且将第二电阻材料层14附着到所述第二热固性聚合物层8上。
对于本发明的目的来说,附着的意思是指任何将单层附加到邻近层的方法,非排他地包括涂覆、层压、溅射、气相沉积、电沉积、镀覆、或气化。
其中所述多层结构被附着的顺序是本发明的一个重要的特征。所述第一和第二热固性聚合物层作为在所述耐热薄膜与所述多层结构的其它层之间的粘合剂。这个发明的一个关键特征是,所述一个或多个粘合聚合物层被直接附着到耐热薄膜层上,特别是在所述耐热薄膜将要附着于导电层的侧面上,其中所述导电层具有在其上的电阻材料层。将所述粘合附着到耐热薄膜而不是导电层上改进了所述制造方法,尤其是在所述导电层上形成电阻材料层中。这还使所述多层结构实现了更好的精确度和均匀性。
所述第一导电层2和所述第二导电层12优选以导电层或箔等形式而存在。在一个最优选的实施方案中,它们各自是以箔的形式而存在的。每个导电层可以包括同样的金属或者可以包括不同的金属。适合于本发明目的的导电金属可以依赖于所期望的应用而有所不同。优选地,所述导电层2、12包括选自由铜、锌、黄铜、铬、镍、锡、铝、不锈钢、铁、金、银、钛、铂和其结合与合金所组成的组的材料。最优选地,所述导电层包括铜。所述导电层优选的厚度为约0.5-约200微米,更优选约9-约70微米。用于本发明所述电容器的导电材料可以用光洁侧表面与无光表面来被生产。这种导电材料的例子在美国专利No.5,679,230中被公开,在此处其被结合作为参考。
所述导电层2、12可以在其一侧或两侧被提供结合增强处理。所述层的一侧或两侧可以任选地被粗糙化,例如通过微蚀刻、通过电解处理以形成粗糙的铜沉积、和/或在所述表面上或在所述表面中用金属或金属合金的微球粒沉积来进行电解处理。其包括用镍、铬、铬酸盐、锌、以及硅烷偶联剂或其结合进行处理。所述球粒可以包括与所述导电层同样的或不同的金属。所述球粒优选为铜或铜合金、并增加对于高分子膜的粘着。此种球粒可以根据在美国专利No.5,679,230中所描述的技术而被施加,其在此处被结合以作为参考。在优选实施方案中,第一导电层和所述第二导电层中的至少一个在其一侧或两侧上被提供以结合增强处理。
所述导电层的表面微结构可以通过表面光度仪(例如PerthometerM4P或S5P型,其可从辛辛那提,俄亥俄的Mahr Feinpruef公司市售得到)而被调节。根据互连和包装电路协会(2115 Sanders Road,Northbrook I11.60062)的工业标准IPC-TM-650 2.2.17节来进行对表面颗粒结构的峰谷的形态测量。进行所述表面处理以产生具有峰谷的表面结构,所述峰谷产生了粗糙度参数,其中算术平均粗糙度(Ra)为约0.2-约1微米,并且根据ISO 64287-1的不规则十点高度表面粗糙度(Rz)可以为约0.5μm-约7μm,更优选为约0.5μm-约5μm,并且最优选地为约0.5μm-约3μm。
所述第一和第二热固性聚合物层作为在所述耐热薄膜与所述多层结构的其它层之间的粘合剂。所述第一热固性聚合物层4和所述第二热固性聚合物层8可以独立地包括环氧化物、环氧化物与用环氧化物、三聚氰胺、不饱和聚酯、尿烷,醇酸树脂、双-马来酰亚胺三嗪、聚酰亚胺、酯、烯丙基化的聚苯醚(或烯丙基聚苯醚)或其结合聚合而得到的材料的结合。所述热固性聚合物层4、8典型地是干燥、固态的,并且可以包括约100%的以上任何化合物,或可以包括这些化合物的混合物,或可以含有其它添加剂。其它可接受的材料包括芳香热固化共聚聚酯,例如描述于美国专利No.5,439,541和5,707,782中的那些。在这些材料中,最优选的电介质是具有约100℃-约250℃,优选约150℃-约200℃的玻璃态转化温度(Tg)的环氧化物。
所述热固性聚合物层4、8也可任选地包括填料金属。优选的填料非排他地包括粉末铁电材料、钛酸钡(BaTiO3)、氮化硼、氧化铝、钛酸锶、钛酸锶钡、及其他陶瓷填料和其组合。如果相结合的话,填料优选存在于所述热固性聚合物层之中,其量为按所述层体积的约5%-约80%,更优选为按所述层体积的约10%-约50%。优选所述第一热固性聚合物层4、所述耐热的薄膜层6和所述第二热固性聚合物层8中的至少一个包含具有约10或更高介电常数的粉末填料。此外,所述热固性聚合物层4、8的一个或两个可以含有染料或颜料以赋予颜色、改变电介质的不透明性或影响对比度。
在一个优选的实施方案中,所述热固性聚合物层4、8以液态聚合物溶液的形式被施加到所述导电层或耐热的薄膜层,以实现所述聚合物厚度的控制和均匀。所述溶液典型地粘度为约50-约35,000厘泊,优选的粘度为100-27,000厘泊。所述聚合物溶液包括约10-约80%并且优选15-60重量%的聚合物,所述溶液的其余部分包含一种或多种溶剂。有用的溶剂包括丙酮、甲乙酮、N-甲基吡咯烷酮、N,N二甲基甲酰胺、N,N二甲基乙酰胺及其混合物。最优选的单一溶剂是甲乙酮。
所述热固性聚合物层也可以以固体片材的形式被施加到所述导电层2、12或耐热的薄膜层6上。在这样一个实施方案中,通过层压来实施将所述第一和第二热固性聚合物层附着到耐热薄膜层的相对表面上。可以在约150℃-约310℃,更优选约160℃-约200℃的温度下进行压制,从而实施所述层压。层压可以进行约30分钟-约120分钟,优选约40分钟-约80分钟。优选地,所述压制在至少70厘米(28英寸)汞柱真空度之下进行,并维持在约3.5kgf/cm2(50psi)-约28kgf/cm2(400psi)的压力下,优选约4.9kgf/cm2(70psi)-约14kgf/cm2(200psi)。
优选地,所述热固性聚合物层4、8的厚度为约2-约200微米,更优选约2-约100微米。优选所述热固性聚合物层具有至少约19,685伏特/mm厚度(500伏特/密耳)的绝缘强度。
所述耐热的薄膜层6优选包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚乙烯咔唑、聚苯硫醚、芳族聚酰胺、聚酰亚胺、聚酰胺-聚酰亚胺、聚醚腈、聚醚-醚-酮、或其结合。其具有约12.5μm或更少的优选厚度。所述第一热固性聚合物层4、耐热的薄膜层6、和第二热固性聚合物层8的结合厚度约为25μm或更少。所述耐热的薄膜层6具有约150℃或更高的VICAT软化点,通过ISO 306测定。所述耐热的薄膜层6优选具有约300kgf/mm2或更高的杨氏模量、约20kgf/mm2或更高的抗张强度、约5%或更高的伸长率以及比所述第一热固性聚合物层4和所述第二热固性聚合物层8的层压温度更高的软化温度。所述第一热固性聚合物层4、耐热的薄膜层6、和第二热固性聚合物层8中每一个的介电常数约为2.5或更多。所述耐热的薄膜层6优选具有至少约50伏特,更优选至少约250伏特,和最优选地至少约500伏特的介电击穿电压。
在附着所述层以形成多层的结构之前,所述耐热的薄膜层6可以经受结合增强处理,其可以包括等离子处理、电晕处理、化学处理或其结合。
所述电阻材料层10优选包括一个材料选自由镍、铬、镍-铬、铂、钯、镍-磷、钛、铱、钌、二氧化硅和其组合所组成的组。在本发明的优选实施方案中,所述电阻材料层包含镍-磷。
所述电阻材料层10优选使用常规的电镀工艺电镀到所述第二导电层上。电镀是在本领域中众所周知的技术,其典型地通过将基材放置在液体电解质溶液中,并在所述基材上的导电区域与所述液体中的反电极之间施加电势而进行。实施化学加工以在所述基材上形成材料层。
使用电镀浴来沉积电阻性的薄膜,典型地在显著大于室温的温度下运行,也就是说,在超过100℉(38℃)的温度下运行。事实上,大多数先前用于沉积电阻性的合金薄膜的电镀浴运行在150℉(65℃)-约212℉(100℃)的温度下。在已知工艺中,沉积在所述导电层上的所述电沉积的电阻层的厚度是镀覆效率的函数,其反过来又是温度的函数。
适合的电镀浴的一个例子包含次磷酸盐离子的水溶液,并且特别地,所述次磷酸盐离子由次磷酸镍(Ni(H2PO2)2)形成。次磷酸镍容易由碳酸镍(NiCO3)与次磷酸(H3PO2)的反应而制备。也就是说,适于导电层上镍-磷电阻层的电沉积的次磷酸镍是通过如下过程制备的:形成约半摩尔碳酸镍和一摩尔次磷酸以及有限量水的水溶液,从而产生结晶反应产物,其当用水稀释到约0.67摩尔每升的浓度时完全溶解。并不意图对本发明进行限制,所述反应被确信是根据以下方程而进行的:
NiCO3+2H3PO2=Ni(H2PO2)2+CO2+H2O
或者,由次磷酸镍所形成的包含次磷酸盐离子的电镀浴可以通过氯化镍(NiCl2)与次磷酸钠(NaH2PO2)的反应而生产。所述反应方程式假定为:
NiCl2+2NaH2PO2=Ni(H2PO2)2+2NaCl
尽管如此,优选地使用由碳酸镍和次磷酸与作为反应产物的次磷酸镍所形成的电镀浴,这是由于该反应所产生的副产物为二氧化碳和水;然而,由氯化镍和次磷酸钠产生次磷酸镍而形成的电镀浴经常产生副产品氯化钠,其必须被除去以防止在连续工艺中随时间而产生的浓度累积。由次磷酸镍形成的包含次磷酸盐离子的电镀浴在约20℃-50℃温度下操作。可期望的,所述浴在室温下(20℃-25℃)运行。这样的浴实际上是温度不敏感的。
在一个优选的实施方案中,所形成的电阻材料层含有至多约50重量%的磷。在另一个优选的实施方案中,所述电阻材料层含有至多30重量%的磷。在另一个实施方案中,所述电阻材料包含30-约50重量%的磷。本发明的另一个实施方案包括在包含镍离子源、H3PO3和H3PO4的水溶液的浴中对所述第二导电层进行电镀,其中所述浴基本上不含硫酸盐和氯化物。
在本领域中已知,电路板材料中电阻层的电阻取决于所述电阻层的厚度以及其中所使用材料的电阻率。当所述电阻层的厚度下降时,所述层的电阻上升。
所述电阻材料层10优选具有约0.5欧姆/平方-约10,000欧姆/平方的电阻,更优选约5欧姆/平方-约500欧姆/平方,并且最优选地约25欧姆/平方-约250欧姆/平方。所述电阻材料层优选具有约0.02μm-约0.2μm的厚度,更优选约0.03μm-约1μm,并且最优选地约0.04μm-约0.4μm。
在一个附加的优选的实施方案中,所述电阻材料层顶部至少约十个原子的层是不含硫的。在另一个优选的实施方案中,所述电阻材料层的表面是基本上无缺陷(pit)的。
所述任选附加的电阻材料层14可以与所述电阻材料层10相同或不同。优选地这两个层10、14基本上相同。
在本发明的一个附加的实施方案中(未显示),阻挡层粘附在所述电阻材料层10和所述第二导电层12之间,其中所述阻挡的厚度为小于约0.1μm,其与所述电阻材料层组成不同,并且能够保护所述电阻材料层10不受来自碱性铜氨蚀刻剂的侵蚀。所述阻挡层优选地具有小于约0.1μm的厚度,更优选约50埃-约0.1μm,以及最优选约150埃-约600埃。在优选实施方案中,所述阻挡层是使用传统方法电镀的。所述阻挡层可以是具有良好蚀刻剂选择性的无机材料。同样重要的是,用作所述阻挡层的材料对于在其下的所述电阻层的电阻率和其他功能性质的一致性基本没有不利影响。所述阻挡层优选地包括选自由Ni-Sn、Co-Sn、Cd-Sn、Cd-Ni、Ni-Cr、Ni-Au、Ni-Pd、Ni-Zn、Sn-Pb、Sn-Zn、Ni、Sn和其组合所组成的组的材料。优选的阻挡层包含镍-锡。
根据本发明的方法形成的多层结构优选被用于形成电阻器或电容器。其可以被用于形成印刷电路板、电子器件等。
在本发明的优选实施方案中,根据本发明所形成的电容器的电容优选为至少约100pF/cm2,更优选约100pF/cm2-约4,000pF/cm2。根据本发明所形成的电容器可以用于各种印制电路应用。例如,可以在所述第一导电层上存在电连接,并且另一个电连接到第二导电层。所述电容器可以被连接到或被结合进印刷电路板或其它电子器件,或者所述电子器件可以包括含所述电容器的印刷电路板。它们可以结合于或包埋进刚性的、柔性的或者刚性/柔性的电路、印刷电路板或其它微电子装置例如芯片封装。通常,它们被用于在一个或两个导电材料层上制作第一电路图案。通过电沉积、溅射、气相沉积或者其它方式,第二电路图案也可以以导电箔的形式被施加到所述聚合物表面。此外,可能必需在所述电容器中产生孔洞以与相对的电路层连接。
一旦形成电容器,也可使用已知的蚀刻技术在所述导电材料层中制作电路图案。在蚀刻中,可光成像的抗蚀剂层、干燥薄膜或液体材料被施加到所述导电箔层上。使用覆盖在所述抗蚀剂上的负片图案,所述光致抗蚀剂被暴露于光化学辐射例如UV辐射下,制作期望的电路图案。然后,所述成像的电容器被暴露于薄膜显影化学过程,其将选择性地除去不需要的未曝光部分。然后所述电容器与电路图像与已知的化学蚀刻剂浴接触,以除去所述暴露的导电层,留下最终所期望的导电的图案化电容器。各个导电材料层也可以任选地被电连接,其通过形成通过整个电容器的孔并且用导电金属填充所述孔而实现。优选在最少150℃下进行层压步骤。
本发明的方法对在组装时所述多层结构的精确度和均匀性提供了显著的改进。这相对于现有技术的电容器和印刷电路板产生改善的性能,同时最大化了成本效益。
以下非限制性的实施例用来对本发明进行说明。
实施例1
提供厚度为35μm的电镀(ED)铜箔,该箔具有3微米的表面粗糙度并且已经电镀了镍-磷层。所述镍-磷层的厚度和组成导致了25欧姆/平方的电阻层。厚度为6微米的环氧树脂层被施加到所述箔上。一个厚度6微米的环氧树脂层被施加到另一个35微米的ED铜箔上。所述两个被施涂的箔与一张在两个树脂表面之间的12微米聚酰胺薄膜一起被层压。在液压机中在250psi和350℉下进行层压1小时。所述压力室还处于25mm Hg的真空度之下。在层压之后,所述结合的产品在500伏特进行高电势试验以检查可能的短路。使用工业标准技术用碱性蚀刻剂将一个图案蚀刻到所述铜表面中。这个化学过程对铜进行蚀刻而不侵蚀所述电阻(镍-磷)层。进行第二成像过程,通过真空层压光致抗蚀剂、暴露和显影来形成电阻器图案。留在所述镍-磷层上的光致抗蚀剂限定了所述电阻器的图案。用酸性蚀刻剂(例如过硫酸钠或过氧化硫)来除去所述本底镍-磷。所述光致抗蚀剂被剥离并且用自动化光学检验和/或电气测试(包括高电压试验)来检查所述电路。所述电路产品经过加工来制备用于再次层压的铜。该加工是黑氧化处理或其替换物。所述电路产品被层压到多层印刷电路板之内并使用工业标准技术来完成。
实施例2
实施例1被重复,除了使用的是1000欧姆/平方的电阻层、4微米厚度的环氧树脂和4微米厚度的聚酰胺薄膜。
实施例3
实施例1被重复,除了所述聚酰胺薄膜的两侧被施加在其上各自具有电阻层的铜箔,得到了双侧的电阻器产品。所述层的电阻可以是相同或不同,例如在第一侧为25欧姆/平方而在第二侧为1000欧姆/平方。
虽然参考优选的实施方案本发明已经被特别地显示和描述,能够被本领域技术人员容易理解的是,各种变化和改进可以被得到,而并不违反本发明的精神和范围。意图用以下权利要求来概括所公开的实施方案、如上面所讨论的替代方案及其所有同等物。
Claims (20)
1.一种形成多层结构的方法,其包含如下步骤:将第一热固性聚合物层附着到第一导电层的表面;将第二热固性聚合物层附着到耐热薄膜层的第一表面;提供具有形成于其表面上的电阻材料层的第二导电层;将所述电阻材料层附着到第二热固性聚合物;以及将所述第一热固性聚合物附着到所述耐热薄膜层的第二表面上;
其中所述电阻材料层选自由镍、铬、镍-铬、铂、钯、镍-磷、钛、铱、钌、二氧化硅和其组合所组成的组。
2.权利要求1所述的方法,其中通过层压将所述第一和第二热固性聚合物层中的至少一个附着到所述耐热薄膜层的相对的表面。
3.权利要求1所述的方法,其中所述电阻材料层具有0.5欧姆/平方-10,000欧姆/平方的电阻。
4.权利要求1所述的方法,其中所述第一导电层和所述第二导电层独立地包括选自由铜、锌、黄铜、铬、镍、铝、不锈钢、铁、金、银、钛、铂和其组合所组成的组的材料。
5.权利要求1所述的方法,其中所述第一导电层和所述第二导电层包括铜。
6.权利要求1所述的方法,其中所述第一导电层和第二导电层包括具有0.5μm-5μm的表面粗糙度Rz的铜箔。
7.权利要求1所述的方法,其中所述第一导电层和所述第二导电层中的至少一个在其一侧或两侧上被提供以结合增强处理。
8.权利要求1所述的方法,其中所述第一导电层和所述第二导电层中的至少一个被提供以结合增强处理,其包含用金属球粒、镍、铬、铬酸盐、锌、硅烷偶联剂或其结合来进行处理。
9.权利要求1所述的方法,其中所述第一热固性聚合物层和所述第二热固性聚合物层中的一个或两个包括环氧化物、三聚氰胺、不饱和聚酯、尿烷、醇酸树脂、双-马来酰亚胺三嗪、聚酰亚胺、酯、烯丙基化的聚苯醚或其结合。
10.权利要求1所述的方法,其中所述耐热薄膜层包含聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚乙烯咔唑、聚苯硫醚、芳族聚酰胺、聚酰亚胺、聚酰胺-聚酰亚胺、聚醚-腈、聚醚-醚-酮、或其结合。
11.权利要求1所述的方法,其中所述电阻材料层包含镍-磷。
12.权利要求11所述的方法,其中所述电阻材料层含有至多30重量%的磷。
13.权利要求1所述的方法,其中所述电阻材料层通过电镀形成。
14.权利要求13所述的方法,其中所述电镀包含在包含镍离子源、H3PO3和H3PO4水溶液的浴中对所述第二导电层进行电镀的步骤,其中所述浴基本上不含硫酸盐和氯化物。
15.权利要求1所述的方法,其中所述电阻材料层顶部至少十个原子层是不含硫的。
16.权利要求1所述的方法,其中所述电阻材料层的表面在400x放大率下观察时基本上无缺陷并且是连续的。
17.权利要求1所述的方法,还包括在所述电阻材料层与所述第二导电层之间的阻挡层,其中所述阻挡层的厚度为小于0.1μm,其组成与所述电阻材料层不同,并且能够保护所述电阻材料层不受碱性铜氨蚀刻剂的侵蚀。
18.根据权利要求1生产的多层结构。
19.根据权利要求1所述的方法生产的包括多层结构的电容器。
20.一种电子装置,其包含根据权利要求1所述方法生产的多层结构。
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US11/062,784 US7596842B2 (en) | 2005-02-22 | 2005-02-22 | Method of making multilayered construction for use in resistors and capacitors |
US11/062,784 | 2005-02-22 | ||
PCT/US2006/005424 WO2006091463A2 (en) | 2005-02-22 | 2006-02-15 | Method of making multilayered construction for use in resistors and capacitors |
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EP (1) | EP1851778B1 (zh) |
JP (1) | JP2008532270A (zh) |
KR (1) | KR101144480B1 (zh) |
CN (1) | CN101501795B (zh) |
CA (1) | CA2595302C (zh) |
MY (1) | MY142854A (zh) |
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Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7596842B2 (en) * | 2005-02-22 | 2009-10-06 | Oak-Mitsui Inc. | Method of making multilayered construction for use in resistors and capacitors |
FR2917231B1 (fr) * | 2007-06-07 | 2009-10-02 | St Microelectronics Sa | Realisation de condensateurs dotes de moyens pour diminuer les contraintes du materiau metallique de son armature inferieure |
US8395053B2 (en) * | 2007-06-27 | 2013-03-12 | Stats Chippac Ltd. | Circuit system with circuit element and reference plane |
US7886414B2 (en) * | 2007-07-23 | 2011-02-15 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing capacitor-embedded PCB |
US8069559B2 (en) * | 2007-08-24 | 2011-12-06 | World Properties, Inc. | Method of assembling an insulated metal substrate |
CN101489356B (zh) * | 2008-01-16 | 2011-03-30 | 富葵精密组件(深圳)有限公司 | 电路板及其制作方法 |
KR100966638B1 (ko) * | 2008-03-25 | 2010-06-29 | 삼성전기주식회사 | 커패시터 내장형 인쇄회로기판 및 그 제조방법 |
US7791897B2 (en) * | 2008-09-09 | 2010-09-07 | Endicott Interconnect Technologies, Inc. | Multi-layer embedded capacitance and resistance substrate core |
US9390857B2 (en) * | 2008-09-30 | 2016-07-12 | General Electric Company | Film capacitor |
US20100239871A1 (en) * | 2008-12-19 | 2010-09-23 | Vorbeck Materials Corp. | One-part polysiloxane inks and coatings and method of adhering the same to a substrate |
US8866018B2 (en) * | 2009-01-12 | 2014-10-21 | Oak-Mitsui Technologies Llc | Passive electrical devices and methods of fabricating passive electrical devices |
KR101133327B1 (ko) * | 2010-04-09 | 2012-04-05 | 삼성전기주식회사 | 적층 세라믹 커패시터의 제조방법 |
US8256078B2 (en) * | 2010-07-02 | 2012-09-04 | Faradox Energy Storage, Inc. | Method of forming long strips of dielectric coated metalized film |
EP2763517A4 (en) * | 2011-09-30 | 2015-07-08 | Meiko Electronics Co Ltd | Substrate Preparation Process |
KR102038137B1 (ko) * | 2012-12-21 | 2019-10-30 | 주식회사 넥스플렉스 | 다층 연성금속박 적층체 및 이의 제조방법 |
WO2015198457A1 (ja) * | 2014-06-26 | 2015-12-30 | ギガフォトン株式会社 | ガスレーザ装置及びコンデンサ |
JP5940138B2 (ja) * | 2014-12-24 | 2016-06-29 | 古河電気工業株式会社 | キャパシタ型蓄電池用絶縁膜 |
US10032751B2 (en) * | 2015-09-28 | 2018-07-24 | Invensas Corporation | Ultrathin layer for forming a capacitive interface between joined integrated circuit components |
US10811388B2 (en) | 2015-09-28 | 2020-10-20 | Invensas Corporation | Capacitive coupling in a direct-bonded interface for microelectronic devices |
US10083781B2 (en) | 2015-10-30 | 2018-09-25 | Vishay Dale Electronics, Llc | Surface mount resistors and methods of manufacturing same |
US9707738B1 (en) | 2016-01-14 | 2017-07-18 | Chang Chun Petrochemical Co., Ltd. | Copper foil and methods of use |
WO2017154167A1 (ja) * | 2016-03-10 | 2017-09-14 | 三井金属鉱業株式会社 | 多層積層板及びこれを用いた多層プリント配線板の製造方法 |
CN106376171A (zh) * | 2016-09-28 | 2017-02-01 | 昆山维嘉益材料科技有限公司 | 一种具有黑色sus板的fpc金属补强板 |
FR3059201B1 (fr) * | 2016-11-18 | 2019-06-21 | Safran Electrical & Power | Circuit imprime a isolation renforcee et procede de fabrication |
US10438729B2 (en) | 2017-11-10 | 2019-10-08 | Vishay Dale Electronics, Llc | Resistor with upper surface heat dissipation |
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TWI694752B (zh) * | 2018-10-26 | 2020-05-21 | 鼎展電子股份有限公司 | 內嵌式被動元件結構 |
TW202114490A (zh) * | 2019-09-27 | 2021-04-01 | 鼎展電子股份有限公司 | 軟性電阻電容複合銅膜結構與使用該軟性電阻電容複合銅膜結構之電路板結構 |
CN111918427A (zh) * | 2020-08-10 | 2020-11-10 | 浙江豪能新能源有限公司 | 一种面发热片及制造方法 |
CN114583049B (zh) * | 2022-05-05 | 2022-07-29 | 北京芯可鉴科技有限公司 | Mim电容器的制作方法及mim电容器 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4808967A (en) * | 1985-05-29 | 1989-02-28 | Ohmega Electronics | Circuit board material |
US5172304A (en) * | 1990-11-22 | 1992-12-15 | Murata Manufacturing Co., Ltd. | Capacitor-containing wiring board and method of manufacturing the same |
US5689227A (en) * | 1993-07-21 | 1997-11-18 | Ohmega Electronics, Inc. | Circuit board material with barrier layer |
US5689879A (en) * | 1992-08-17 | 1997-11-25 | Hitachi Chemical Company, Ltd. | Metal foil for printed wiring board and production thereof |
US6657849B1 (en) * | 2000-08-24 | 2003-12-02 | Oak-Mitsui, Inc. | Formation of an embedded capacitor plane using a thin dielectric |
US6693793B2 (en) * | 2001-10-15 | 2004-02-17 | Mitsui Mining & Smelting Co., Ltd. | Double-sided copper clad laminate for capacitor layer formation and its manufacturing method |
CN1536948A (zh) * | 2002-11-26 | 2004-10-13 | �źӵ�·ͭ����ʽ���� | 薄膜电阻层形成用电镀浴、电阻层形成法、带电阻层的导电基材及带电阻层的电路基板材料 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3808576A (en) * | 1971-01-15 | 1974-04-30 | Mica Corp | Circuit board with resistance layer |
US4888574A (en) * | 1985-05-29 | 1989-12-19 | 501 Ohmega Electronics, Inc. | Circuit board material and method of making |
US4892776A (en) * | 1987-09-02 | 1990-01-09 | Ohmega Electronics, Inc. | Circuit board material and electroplating bath for the production thereof |
US5261153A (en) * | 1992-04-06 | 1993-11-16 | Zycon Corporation | In situ method for forming a capacitive PCB |
US5185689A (en) * | 1992-04-29 | 1993-02-09 | Motorola Inc. | Capacitor having a ruthenate electrode and method of formation |
US5679230A (en) | 1995-08-21 | 1997-10-21 | Oak-Mitsui, Inc. | Copper foil for printed circuit boards |
US6281090B1 (en) * | 1996-10-16 | 2001-08-28 | Macdermid, Incorporated | Method for the manufacture of printed circuit boards with plated resistors |
US5945257A (en) * | 1997-10-29 | 1999-08-31 | Sequent Computer Systems, Inc. | Method of forming resistors |
US6215649B1 (en) * | 1998-11-05 | 2001-04-10 | International Business Machines Corporation | Printed circuit board capacitor structure and method |
US6356455B1 (en) * | 1999-09-23 | 2002-03-12 | Morton International, Inc. | Thin integral resistor/capacitor/inductor package, method of manufacture |
US6759596B1 (en) * | 2000-05-12 | 2004-07-06 | Shipley Company | Sequential build circuit board |
US6689227B2 (en) * | 2001-01-23 | 2004-02-10 | Tata Consultancy Services, Division Of Tata Sons Ltd | Eco-friendly starch quenchants |
JP3770537B2 (ja) * | 2001-07-30 | 2006-04-26 | 三井金属鉱業株式会社 | キャパシター及びそれを形成するための両面銅張積層板の製造方法 |
KR100896906B1 (ko) * | 2001-09-28 | 2009-05-12 | 지멘스 악티엔게젤샤프트 | 기판의 전기적 콘택트면들과 콘택트하기 위한 방법 및전기적 콘택트면들을 갖는 기판을 포함하는 디바이스 |
JP2004040073A (ja) * | 2002-01-11 | 2004-02-05 | Shipley Co Llc | 抵抗器構造物 |
US6870436B2 (en) * | 2002-03-11 | 2005-03-22 | Hewlett-Packard Development Company, L.P. | Method and apparatus to attenuate power plane noise on a printed circuit board using high ESR capacitors |
JP2004140268A (ja) * | 2002-10-18 | 2004-05-13 | Matsushita Electric Works Ltd | 高周波用多層プリント配線板の製造方法 |
US6910264B2 (en) * | 2003-01-03 | 2005-06-28 | Phoenix Precision Technology Corp. | Method for making a multilayer circuit board having embedded passive components |
US6873219B2 (en) * | 2003-01-28 | 2005-03-29 | Hewlett-Packard Development Company, L.P. | Printed circuit board noise attenuation using lossy conductors |
US7430128B2 (en) * | 2004-10-18 | 2008-09-30 | E.I. Du Pont De Nemours And Company | Capacitive/resistive devices, organic dielectric laminates and printed wiring boards incorporating such devices, and methods of making thereof |
US7382627B2 (en) * | 2004-10-18 | 2008-06-03 | E.I. Du Pont De Nemours And Company | Capacitive/resistive devices, organic dielectric laminates and printed wiring boards incorporating such devices, and methods of making thereof |
US7596842B2 (en) * | 2005-02-22 | 2009-10-06 | Oak-Mitsui Inc. | Method of making multilayered construction for use in resistors and capacitors |
US7192654B2 (en) * | 2005-02-22 | 2007-03-20 | Oak-Mitsui Inc. | Multilayered construction for resistor and capacitor formation |
-
2005
- 2005-02-22 US US11/062,784 patent/US7596842B2/en active Active
-
2006
- 2006-02-15 CN CN200680005673.XA patent/CN101501795B/zh active Active
- 2006-02-15 JP JP2007556280A patent/JP2008532270A/ja active Pending
- 2006-02-15 WO PCT/US2006/005424 patent/WO2006091463A2/en active Application Filing
- 2006-02-15 EP EP06735203A patent/EP1851778B1/en not_active Expired - Fee Related
- 2006-02-15 CA CA2595302A patent/CA2595302C/en not_active Expired - Fee Related
- 2006-02-15 KR KR1020077019864A patent/KR101144480B1/ko active IP Right Grant
- 2006-02-16 MY MYPI20060659A patent/MY142854A/en unknown
- 2006-02-20 TW TW095105629A patent/TWI406312B/zh active
-
2009
- 2009-08-26 US US12/547,881 patent/US7862900B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4808967A (en) * | 1985-05-29 | 1989-02-28 | Ohmega Electronics | Circuit board material |
US5172304A (en) * | 1990-11-22 | 1992-12-15 | Murata Manufacturing Co., Ltd. | Capacitor-containing wiring board and method of manufacturing the same |
US5689879A (en) * | 1992-08-17 | 1997-11-25 | Hitachi Chemical Company, Ltd. | Metal foil for printed wiring board and production thereof |
US5689227A (en) * | 1993-07-21 | 1997-11-18 | Ohmega Electronics, Inc. | Circuit board material with barrier layer |
US6657849B1 (en) * | 2000-08-24 | 2003-12-02 | Oak-Mitsui, Inc. | Formation of an embedded capacitor plane using a thin dielectric |
US6693793B2 (en) * | 2001-10-15 | 2004-02-17 | Mitsui Mining & Smelting Co., Ltd. | Double-sided copper clad laminate for capacitor layer formation and its manufacturing method |
CN1536948A (zh) * | 2002-11-26 | 2004-10-13 | �źӵ�·ͭ����ʽ���� | 薄膜电阻层形成用电镀浴、电阻层形成法、带电阻层的导电基材及带电阻层的电路基板材料 |
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CA2595302A1 (en) | 2006-08-31 |
MY142854A (en) | 2011-01-14 |
JP2008532270A (ja) | 2008-08-14 |
WO2006091463A8 (en) | 2007-08-23 |
US7596842B2 (en) | 2009-10-06 |
US7862900B2 (en) | 2011-01-04 |
US20090314531A1 (en) | 2009-12-24 |
US20060185140A1 (en) | 2006-08-24 |
CN101501795A (zh) | 2009-08-05 |
KR20070104925A (ko) | 2007-10-29 |
WO2006091463A2 (en) | 2006-08-31 |
WO2006091463A3 (en) | 2009-04-09 |
CA2595302C (en) | 2013-07-16 |
EP1851778B1 (en) | 2012-08-08 |
TW200641938A (en) | 2006-12-01 |
TWI406312B (zh) | 2013-08-21 |
EP1851778A4 (en) | 2010-03-24 |
EP1851778A2 (en) | 2007-11-07 |
KR101144480B1 (ko) | 2012-05-11 |
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