CN101477995A - 光电检测半导体器件、光电检测器和图像显示装置 - Google Patents
光电检测半导体器件、光电检测器和图像显示装置 Download PDFInfo
- Publication number
- CN101477995A CN101477995A CNA2008101907557A CN200810190755A CN101477995A CN 101477995 A CN101477995 A CN 101477995A CN A2008101907557 A CNA2008101907557 A CN A2008101907557A CN 200810190755 A CN200810190755 A CN 200810190755A CN 101477995 A CN101477995 A CN 101477995A
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- photodiode
- light receiving
- receiving element
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007332337 | 2007-12-25 | ||
JP2007-332337 | 2007-12-25 | ||
JP2007332337A JP2009158570A (ja) | 2007-12-25 | 2007-12-25 | 光検出半導体装置、光検出装置、及び画像表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101477995A true CN101477995A (zh) | 2009-07-08 |
CN101477995B CN101477995B (zh) | 2012-08-15 |
Family
ID=40514091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101907557A Expired - Fee Related CN101477995B (zh) | 2007-12-25 | 2008-12-24 | 光电检测半导体器件、光电检测器和图像显示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090184331A1 (zh) |
EP (1) | EP2075844A3 (zh) |
JP (1) | JP2009158570A (zh) |
KR (1) | KR20090069247A (zh) |
CN (1) | CN101477995B (zh) |
TW (1) | TW200952195A (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102254919A (zh) * | 2010-04-12 | 2011-11-23 | 成功大学 | 分布式滤波感测结构及光学装置 |
CN102931208A (zh) * | 2011-08-09 | 2013-02-13 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
CN106133924A (zh) * | 2014-03-31 | 2016-11-16 | 国立大学法人东北大学 | 紫外光用固体受光器件 |
CN109755265A (zh) * | 2019-03-22 | 2019-05-14 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN112563299A (zh) * | 2020-12-10 | 2021-03-26 | 成都微光集电科技有限公司 | Cmos图像传感器及其制备方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI453940B (zh) * | 2007-12-25 | 2014-09-21 | Seiko Instr Inc | A light detection device, and a video display device |
JP5305387B2 (ja) * | 2007-12-25 | 2013-10-02 | セイコーインスツル株式会社 | 光検出装置、及び画像表示装置 |
JP2010103378A (ja) * | 2008-10-24 | 2010-05-06 | Omron Corp | 光センサ |
GB0921944D0 (en) * | 2009-12-16 | 2010-02-03 | St Microelectronics Ltd | Improvements in or relating to compact fluorescent lamps |
WO2012007580A2 (de) * | 2010-07-15 | 2012-01-19 | Zentrum Mikroelektronik Dresden Ag | Anordnung und verfahren zur detektion unterschiedlicher lichtwellenlängen |
JP5973149B2 (ja) | 2010-10-14 | 2016-08-23 | ローム株式会社 | 光検出装置 |
US9403172B2 (en) * | 2012-11-08 | 2016-08-02 | Berkeley Lights, Inc. | Circuit based optoelectronic tweezers |
JP6976067B2 (ja) * | 2017-03-24 | 2021-12-01 | エイブリック株式会社 | 紫外線受光素子を有する半導体装置およびその製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60143668A (ja) * | 1983-12-29 | 1985-07-29 | Res Dev Corp Of Japan | カラ−用イメ−ジセンサ |
JPH01207640A (ja) * | 1988-02-16 | 1989-08-21 | Hamamatsu Photonics Kk | 半導体光検出装置と紫外線検出方法および半導体光検出素子とその製造方法 |
JPH01292220A (ja) * | 1988-05-19 | 1989-11-24 | Hamamatsu Photonics Kk | 半導体光検出装置 |
JPH0369173A (ja) * | 1989-08-08 | 1991-03-25 | Nec Corp | ホトカプラ |
JP3445407B2 (ja) * | 1995-06-02 | 2003-09-08 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP3155191B2 (ja) * | 1996-02-20 | 2001-04-09 | 株式会社生体光情報研究所 | 微弱光測定装置 |
JP3217014B2 (ja) * | 1997-05-23 | 2001-10-09 | 国際技術開発株式会社 | 炎感知器 |
JP3313663B2 (ja) * | 1999-05-14 | 2002-08-12 | 国際技術開発株式会社 | 炎感知器 |
EP1133033A1 (en) * | 2000-02-09 | 2001-09-12 | Alcatel | A method of stabilizing the wavelength of lasers and a wavelength monitor |
JP4012743B2 (ja) * | 2002-02-12 | 2007-11-21 | 浜松ホトニクス株式会社 | 光検出装置 |
JP3793205B2 (ja) * | 2003-03-06 | 2006-07-05 | 松下電器産業株式会社 | 電荷検出装置および固体撮像装置 |
JP2005175430A (ja) * | 2003-11-18 | 2005-06-30 | Matsushita Electric Ind Co Ltd | 受光素子 |
CN100449764C (zh) * | 2003-11-18 | 2009-01-07 | 松下电器产业株式会社 | 光电探测器 |
US7271378B2 (en) * | 2003-12-15 | 2007-09-18 | Eastman Kodak Company | Ambient light detection circuit with control circuit for integration period signal |
EP1816677A1 (en) * | 2004-09-09 | 2007-08-08 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup element |
JP2006216643A (ja) * | 2005-02-02 | 2006-08-17 | Seiko Instruments Inc | Cmosイメージセンサ |
US7534982B2 (en) * | 2005-06-09 | 2009-05-19 | Micron Technology, Inc. | Reduced imager crosstalk and pixel noise using extended buried contacts |
JP2006351616A (ja) * | 2005-06-13 | 2006-12-28 | Mitsumi Electric Co Ltd | 半導体光センサ装置 |
-
2007
- 2007-12-25 JP JP2007332337A patent/JP2009158570A/ja active Pending
-
2008
- 2008-12-23 US US12/342,245 patent/US20090184331A1/en not_active Abandoned
- 2008-12-24 KR KR1020080133798A patent/KR20090069247A/ko not_active Application Discontinuation
- 2008-12-24 EP EP08172929A patent/EP2075844A3/en not_active Ceased
- 2008-12-24 CN CN2008101907557A patent/CN101477995B/zh not_active Expired - Fee Related
- 2008-12-24 TW TW097150452A patent/TW200952195A/zh unknown
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102254919A (zh) * | 2010-04-12 | 2011-11-23 | 成功大学 | 分布式滤波感测结构及光学装置 |
CN102254919B (zh) * | 2010-04-12 | 2013-08-14 | 成功大学 | 分布式滤波感测结构及光学装置 |
CN102931208A (zh) * | 2011-08-09 | 2013-02-13 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
CN102931208B (zh) * | 2011-08-09 | 2017-03-01 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
CN106133924A (zh) * | 2014-03-31 | 2016-11-16 | 国立大学法人东北大学 | 紫外光用固体受光器件 |
CN106133924B (zh) * | 2014-03-31 | 2019-03-15 | 国立大学法人东北大学 | 紫外光用固体受光器件 |
CN109755265A (zh) * | 2019-03-22 | 2019-05-14 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN112563299A (zh) * | 2020-12-10 | 2021-03-26 | 成都微光集电科技有限公司 | Cmos图像传感器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20090069247A (ko) | 2009-06-30 |
EP2075844A3 (en) | 2009-08-19 |
JP2009158570A (ja) | 2009-07-16 |
TW200952195A (en) | 2009-12-16 |
US20090184331A1 (en) | 2009-07-23 |
EP2075844A2 (en) | 2009-07-01 |
CN101477995B (zh) | 2012-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160315 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20191224 |