CN101477955B - Encapsulation structure and method for tablet reconfiguration - Google Patents
Encapsulation structure and method for tablet reconfiguration Download PDFInfo
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- CN101477955B CN101477955B CN2008100016521A CN200810001652A CN101477955B CN 101477955 B CN101477955 B CN 101477955B CN 2008100016521 A CN2008100016521 A CN 2008100016521A CN 200810001652 A CN200810001652 A CN 200810001652A CN 101477955 B CN101477955 B CN 101477955B
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to a chip reallocated packaging structure which comprises a chip with an active surface and a lower surface, and a plurality of weld pads allocated on the active surface; a packaging body is used for packaging the chip and exposing the weld pads on the active surface; one ends of a plurality of fanned-out wire sections are electrically connected every weld pad; a protective layer is used for covering the active surface of the chip and every wire section and exposing the other ends of the wire sections; and a plurality of electrically connected elements are electrically connected with the other ends of the wire sections, wherein, the packaging body adopts a two-stage thermosetting cement material.
Description
Technical field
The invention relates to a kind of method for packing semiconductor, particularly relevant for a kind of small pieces or many small pieces are reconfigured to another substrate after, reconfigure layer (RDL) through use again and form modular encapsulating structure and method for packing thereof.
Background technology
Semi-conductive technology has developed suitable rapidly, therefore microminiaturized semiconductor chip (Dice) must have the demand of diversified function, so that semiconductor chip must dispose more I/o pad (I/O pads) in very little zone, thereby so that the density of metal pin (pins) also improved fast.Therefore, early stage leaded package technology has been not suitable for highdensity metal pin; So develop the encapsulation technology of a kind of ball array (Ball Grid Array:BGA), the ball array encapsulation is except having than the more highdensity advantage of leaded package, and its tin ball also relatively is not easy infringement and distortion.
Popular along with 3C Product, such as: mobile phone (Cell Phone), personal digital assistant (PDA) or iPod etc., all the System on Chip/SoC of many complexity must be put into a very little space, therefore be this problem of solution, a kind of being called " wafer-level packaging (wafer level package; WLP) " encapsulation technology develops out, and it can before cutting crystal wafer becomes many small pieces, just encapsulate wafer first.The U.S. the 5th, 323, No. 051 patent has namely disclosed this " wafer-level packaging " technology.Yet, this " wafer-level packaging " technology is along with the increase of the weld pad on the small pieces active face (pads) number, so that the spacing of weld pad (pads) is too small, except meeting causes the problem of signal coupling or signal interference, also can cause because the weld pad spacing is too small the problems such as reliability reduction of encapsulation.Therefore, after small pieces further dwindle again, so that aforesaid encapsulation technology all can't satisfy.
For solving this problem, the U.S. the 7th, 196, No. 408 patent has disclosed a kind of wafer that will finish manufacture of semiconductor, after test and cutting, be that good small pieces (good die) reappose on another substrate with test result, and then carry out encapsulation procedure, so, so that these are had wider spacing by between the small pieces that reappose, so horizontal expansion (or fan-out) (fan out) technology is for example used in distribution that can the weld pad on the small pieces is suitable, therefore can effectively solve because of spacing too small, the problem that causes signal coupling or signal to disturb except meeting.
Yet, for making semiconductor chip can have less and thinner encapsulating structure, before carrying out the wafer cutting, can carry out thinning to wafer first and process, for example grind (backside lapping) mode with wafer thinning to 2～20mil with the back of the body, and then cut into many small pieces.These small pieces through the thinning processing through reconfiguring on another substrate, form a packaging body with injection molded with a plurality of small pieces again; Because small pieces are very thin, so that packaging body also is very thin, so after packaging body broke away from substrate, the stress meeting of packaging body itself was so that packaging body generation warpage increases follow-up difficulty of cutting processing procedure.
In addition, after wafer cutting, small pieces be reconfigured in another size than the size of original substrate also during large substrate, because need to be via fetching device (pick﹠amp; Place) small pieces are picked up, then with after the small pieces upset, to cover crystal type the active face of small pieces is attached on the substrate, and in the process of fetching device with the small pieces upset, can produce easily inclination (tilt) and cause displacement, for example: tilt to surpass 5 microns, thus meeting so that small pieces can't aim at, and then so that follow-up planting in the ball processing procedure also can't be aimed at, and cause the reliability of encapsulating structure to reduce.
For this reason, the invention provides a kind of before carrying out the wafer cutting, the method for packing that forms first registration mark (alignment mark) at the back side of wafer and cooperate small pieces to reconfigure, it can solve effectively can't aim at when planting ball and packaging body produces the problem of warpage.
Summary of the invention
Because plant that ball is aimed at and the problem of packaging body warpage described in the background of invention, the invention provides encapsulating structure and method thereof that a kind of small pieces that utilize the wafer alignment sign reconfigure, a plurality of small pieces are re-started configuration and encapsulate.So main purpose of the present invention provides the method for packing that a kind of two-stage thermosetting cement material covers small pieces, but yield and reliability that Effective Raise is made.
Another main purpose of the present invention provides the method for packing that a kind of small pieces reconfigure, it can be reconfigured in the small pieces that 12 inch wafers cut out on the substrate of 8 inch wafers, so can effectively use the existing sealed in unit of 8 inch wafers, and need not to re-establish the sealed in unit of 12 inch wafers, can reduce the packaging cost of 12 inch wafers.
Of the present invention also have a main purpose to provide the method for packing that a kind of small pieces reconfigure, so that the chip that encapsulates all is " known is normally functioning chip " (Known good die), can save encapsulating material, so also can reduce the cost of processing procedure.
According to above encapsulating structure, the invention provides method for packing that a kind of small pieces reconfigure and comprise a first substrate is provided to have a upper surface and a lower surface, and configuration one photoactive material layer on its upper surface; A plurality of small pieces are provided, and each small pieces has an active face and a back side, and disposes a plurality of weld pads on active face; Picking and placeing a plurality of small pieces, is that the active face with each small pieces is seated on the photosensitive material layer to cover crystal type; One second substrate is provided, has a upper surface and a lower surface, and configuration one polymer material layer on its upper surface; Form a packaging body, it engages second substrate and polymer material layer with the upper surface of first substrate, so that polymer material layer coats each small pieces and is filled between each small pieces; Break away from first substrate, to expose photosensitive material layer; Forming a plurality of openings (opening), is to form a plurality of openings on photosensitive material layer, with a plurality of weld pads on the active face that exposes each small pieces; Form the metal wire sections of many fan-outs, an end of each metal wire sections and a plurality of weld pad are electrically connected; Form a protective layer, with active face and each metal wire sections that covers each small pieces and the other end that exposes each metal wire sections; Form a plurality of electric connection elements, its other end with a plurality of electric connection elements and a plurality of metal wire sections is electrically connected; And the cutting packaging body, to form a plurality of separately packaging bodies independently.
The encapsulating structure that the present invention also provides another kind of small pieces to reconfigure comprises: one has the small pieces of active face and lower surface and dispose a plurality of weld pads on active face; Packaging body is in order to coat small pieces and to expose a plurality of weld pads on the active face; One end of the metal wire sections of many fan-outs and each weld pad are electrically connected; Protective layer used with the active face and each metal wire sections that cover small pieces and the other end electric connection of the other end that exposes metal wire sections and a plurality of electric connection element and many strip metals line segment, wherein, packaging body is a kind of two-stage thermosetting cement material.
The encapsulating structure that the present invention then provides a kind of small pieces to reconfigure again; comprise: a plurality of small pieces and each these small pieces have an active face and a lower surface and dispose a plurality of weld pads on this active faces; one packaging body is in order to coat a plurality of small pieces and to expose a plurality of weld pads on a plurality of small pieces active faces; one end of the metal wire sections of many fan-outs and a plurality of weld pad are electrically connected; one is protective layer used with the active face and the many strip metals line segment that cover small pieces and the other end electric connection of the other end that exposes a plurality of metal wire sections and a plurality of electric connection element and many strip metals line segment; wherein, packaging body is a two-stage thermosetting cement material.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Fig. 1 is the schematic diagram of prior art;
Fig. 2 A to Fig. 2 B is the vertical view of the encapsulating structure at the front of the disclosed wafer having registration mark according to the present invention and the back side;
Fig. 3 to Fig. 7 is the cutaway view according to the encapsulation process of one embodiment of the invention;
Fig. 8 to Figure 12 is the cutaway view according to module packaging process of the present invention;
Figure 13 to Figure 19 is according to the again cutaway view of the encapsulation process of an embodiment of the present invention; And
Figure 20 is the cutaway view according to another module packaging process of the present invention.
The main element symbol description:
20 substrates
30 polymer material layers/photoactive material layer
The opening of 32 photoactive material layers
40 wafers
The front of 40A wafer
The back side of 40B wafer
70 two-stage thermosetting cement materials
The 70A packaging body
80 protective layers
The opening of 82 protective layers
90 metal wire sections
200 adhesion coatings
100 substrates
220 channels
402 registration marks
410 small pieces
412 weld pads
414 Cutting Roads
420 are electrically connected element
500 die devices
700 polymer material layers
Embodiment
The present invention is the method for packing that a kind of small pieces reconfigure in this direction of inquiring into, many small pieces is reconfigured on another substrate the method that then encapsulates.In order to understand up hill and dale the present invention, detailed step and composition thereof will be proposed in following description.Apparently, execution of the present invention does not limit the specific details that those skilled in the art were familiar with of chip-stacked mode.On the other hand, the detailed step of the back-end process such as well-known chip generation type and chip thinning is not described in the details, with the restriction of avoiding causing the present invention unnecessary.Yet, for preferred embodiment of the present invention, can be described in detail as follows, yet except these were described in detail, the present invention can also be implemented among other the embodiment widely, and scope of the present invention circumscribed not, it is as the criterion with claims.
In the semiconductor packing process in modern times, all are wafers (wafer) of having finished FEOL (Front EndProcess) with one, form a thin insulating barrier in the front of wafer first and (for example form a SiO
2Layer), and then carry out first thinning and process (Thinning Process), for example the thickness with chip is ground between 2～20mil; Then, the cutting (sawing process) of carrying out wafer is to form many small pieces 110; Then, use fetching device (pick and place) that many small pieces are positioned on another substrate 100, as shown in Figure 1 one by one.Clearly, the intervals between platelets zone on the substrate 100 is larger than small pieces 110, therefore, and can be so that these 110 of small pieces that reapposed have wider spacing, so distribution that can the weld pad on the small pieces 110 is suitable.In addition, the employed method for packing of present embodiment, the small pieces 110 that 12 inch wafers cut out can be reconfigured on the substrate of 8 inch wafers, so can effectively use the sealed in unit that namely has of 8 inch wafers, and need not to re-establish the sealed in unit of 12 inch wafers, can reduce the packaging cost of 12 inch wafers.Then be stressed that, embodiments of the invention do not limit the substrate that uses 8 inch wafer sizes, as long as it can provide the merit able one of carrying, such as: glass, quartz, pottery, circuit board or sheet metal (metal foil) etc., all can be used as the substrate 100 of present embodiment, so the shape of substrate 100 is not limited yet.
At first, Fig. 2 A and Fig. 2 B, it is the vertical view that expression has the wafer of registration mark.Shown in Fig. 2 A, its upper surface 40A that is illustrated in wafer 40 is formed with a plurality of small pieces 110, and on the X-Y direction of the back side 40B of each small pieces 410 of wafer 40, is provided with a plurality of registration marks (alignment mark) 402, shown in Fig. 2 B.Learnt by prior statement, when wafer 40 forms a plurality of small pieces 410 after cutting, when reconfiguring to another substrate 100 again, because the intervals between platelets zone between the new substrate 100 is larger than small pieces 410, therefore in the process that picks and places small pieces 410, produce easily skew, and the planting ball step (ball mount) and can can't aim at of follow-up encapsulation procedure, and cause the reliability of encapsulating structure to reduce.Therefore in this specific embodiment, before cutting, wafer 40, then forms a plurality of registration marks 402 at the back side of wafer 40 40B and the X-Y direction at the back side of each small pieces first with the back side 40B of wafer up.Then carry out the wafer cutting step, and the back side that makes each small pieces 410 up; Follow again, use fetching device (in figure, not showing) that each small pieces 410 is picked up and is positioned on the substrate 100; Because, all disposed registration mark 402 on the back side of each small pieces 410, therefore, fetching device can directly pick out weld pad 412 positions on each small pieces 410 its active face; When fetching device will be positioned over small pieces 410 on the substrate, can relend the relative position that is calculated small pieces 410 by the reference point on the substrate (in figure, not showing), adding fetching device does not need therefore small pieces 410 upsets can accurately be positioned over small pieces 410 on the substrate 100.So when a plurality of small pieces 410 reconfigure on new substrate 100, just can be because of can't not aligning and the problem of accuracy and reliability.At this, the mode that forms registration mark 402 can be utilized photoetch (photo-etching) processing procedure, X-Y direction at the back side of wafer 40 40B forms a plurality of registration marks 402, and its shape can be random geometry, and in a preferred embodiment, this geometry is the sign of cross.In addition, the mode that forms registration mark 402 also comprises utilizes laser tag (laser mark) processing procedure, forms a plurality of registration marks 402 at the back side of wafer 40 40B.
And then, please refer to Fig. 3, is the generalized section of a specific embodiment of the present invention.As shown in Figure 3, at first, dispose a polymer material layer 30 at substrate 20, this polymer material layer 30 is one to have flexible sticky material, such as silicon rubber (silicone rubber), silicones (silicone resin), elasticity PU, porous PU, acrylic rubber (acrylic rubber) or small pieces cutting glue etc.Then, use fetching device (not being shown among the figure) with the back side up and the small pieces 410 that dispose a plurality of registration marks 402 pick up one by one and be pasted to polymer material layer 30 on the substrate 20, wherein small pieces 410 are to be connected with polymer material layer 30 on the substrate 20 with the weld pad 412 on the active face; Then, a kind of two-stage thermosetting cement material 70 is formed on another substrate 60; Similarly, this substrate 60 also can be glass, quartz, pottery, circuit board or sheet metal (metal foil) etc., and present embodiment is not limited.Then, can optionally carry out a prebake conditions program; For example: under 80 ℃～100 ℃ environment, toasted 5～10 minutes; So that the two-stage thermosetting cement material 70 of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 60.Be stressed that at this thickness of this two-stage thermosetting cement material 70 needs the thickness greater than each chip 410, for example: 3～20mil.Then, substrate 60 and the two-stage thermosetting cement material 70 that is bonded together turned, be about to two-stage thermosetting cement material 70 towards the back side that is fixed in each small pieces 410 on the substrate 20, as shown in Figure 3.
Then, again with the substrate 60 that is bonded together and two-stage thermosetting cement material 70 to pressing down, so that two-stage thermosetting cement material 70 can coat each small pieces 410, as shown in Figure 4.Follow again, carry out a baking program, for example: under 120 ℃～250 ℃ environment, toast 20～60 minutes, so that two-stage thermosetting cement material 70 can be cured, to form a packaging body 70A.Follow again, can select first substrate 60 to be broken away from packaging body 70A, to expose the surface of packaging body 70A, then, can optionally use cutter (not being shown among the figure), form many Cutting Roads 414 on the surface of packaging body 70A; Wherein, the degree of depth of each Cutting Road 414 be 0.5 Mill (mil) to 1 Mill, the width of Cutting Road 414 then is 5 microns to 25 microns.In a preferred embodiment, this Cutting Road 414 can be mutual vertical interlaced, and the reference line when can be used as actual cutting small pieces.Then, polymer material layer 30 is separated with packaging body 70A, for example polymer material layer 30 is inserted in the groove with deionized water with substrate 20, polymer material layer 30 is separated with packaging body 70A.Clearly, this packaging body 70A coats each small pieces 410, and only exposes a plurality of weld pads 412 on the active face of each small pieces 410.Because packaging body 70A has many Cutting Roads 414 in its surface, therefore, after polymer material layer 30 was peeled off with packaging body 70A, the stress on the packaging body 70A can be offset by these Cutting Road 414 formed zones, so can effectively solve the problem of packaging body warpage.
Then, use processing procedure (the Redistribution Layer that reroutes; RDL) form the metal wire sections 90 of a plurality of fan-outs (fanout), each weld pad 412 on an end of this metal wire sections 90 and small pieces 410 active faces is electrically connected, and the other end then extends to small pieces 410 edges; Then, with manufacture of semiconductor in forming a protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening), as shown in Figure 5.At last, on each opening 82, form again a plurality of electric connection elements 420, so that as the small pieces 410 external contacts that are electrically connected, and this electric connection element 420 can be metal coupling (metal bump) or tin ball (solder ball), as shown in Figure 6.Then, can carry out last cutting to packaging body 70A, to form many small pieces of finishing encapsulation procedure.Clearly, 5 faces of in the present embodiment each small pieces 410 are all coated by two-stage thermosetting cement material 70 formed packaging body 70A, only have the active face of small pieces 410 not coated by two-stage thermosetting cement material 70.Simultaneously, also by the configuration of registration mark 402, so that metal wire sections 90 and electric connection element 420 all can accurately be connected with weld pad 412, the reliability of the small pieces 410 of finishing encapsulation is improved.
And in the above-described embodiments, also the polymer material layer 30 on the substrate 20 can be replaced with a kind of photosensitive material layer (photo sensitive layer).After a plurality of chips 410 engage with light sensation optical material layer 30 and are coated by two-stage thermosetting cement material 70, when carrying out the baking program of two-stage thermosetting cement material 70, be solidified into the packaging body 70A except meeting makes two-stage thermosetting cement material 70, photosensitive material layer 30 also can be cured.Therefore, when soaking photosensitive material layer 30 in the deionized water, photosensitive material layer 30 can break away from packaging body 70A, and exposes the weld pad 412 on each small pieces 410.Then, use processing procedure (the Redistribution Layer that reroutes; RDL) form the metal wire sections 90 of a plurality of fan-outs (fan out), an end of this metal wire sections 90 is electrically connected with each weld pad 412 on small pieces 410 active faces, and the other end then extends to small pieces 410 edges; Then, with manufacture of semiconductor in forming a protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening), as shown in Figure 5.At last, on each opening 82, form again a plurality of electric connection elements 420, so that as the small pieces 410 external contacts that are electrically connected, wherein, this is electrically connected element 420 can be metal coupling (metalbump) or tin ball (solder ball), as shown in Figure 6.Then, can carry out last cutting to packaging body, to form many small pieces of finishing encapsulation procedure, as shown in Figure 7.
In addition, in the above-described embodiments, because substrate 60 is not removed, so after packaging body 70A is cut into many small pieces 410 of finishing encapsulation, its each finish on the back side of small pieces 410 of encapsulation and all leave substrate 60, it can be used as the fin of the small pieces 410 of finishing encapsulation, as shown in Figure 7.Certainly, in aforesaid encapsulation process, can be chosen in polymer material layer 30 with after packaging body 70A separates disengaging yet, can further substrate 60 also be broken away from, at this moment, the back side of small pieces 410 does not just have substrate 60.
According to aforementioned disclosed content, the present invention further discloses a kind of structure of modular many dice packages.At first, please refer to Fig. 8, it represents a plurality of identical small pieces are formed the schematic diagram of an encapsulation module, in the present embodiment, is to illustrate with the formed illuminating module of four LEDs luminous elements; In addition, a plurality of identical small pieces also can be DRAM.
As shown in Figure 8, small pieces 320 are to be light-emitting diode (LED), and the P electrode 322 of each light-emitting diode 320 is electrically connected with the P electrode 322 of adjacent light-emitting diode 320; And the N electrode 321 of light-emitting diode 320 to be N electrodes 321 with adjacent light-emitting diode 320 be electrically connected, and the N electrode 321 of each light-emitting diode 320 and P electrode 322 be by metal wire sections 90 respectively be electrically connected element 330 and be electrically connected.Similarly, the present invention does not limit the quantity of light-emitting diode 320 or the mode of its electric connection yet, for example: with a plurality of light-emitting diodes (LED) be concatenated into a column light source or and be unified into a shape light source; Simultaneously, the present invention does not limit the glow color of light-emitting diode 320 yet, namely light-emitting diode 320 can be red light-emitting diode or green light LED or blue light-emitting diode or other colors light-emitting diode (such as: white light) or the combination of aforementioned light-emitting diode etc.In addition, when small pieces are DRAM, because the weld pad on each DRAM is all identical, therefore can come suitable wiring (layout) by the metal wire sections of patterning, each DRAM is done suitable electric connection; For example: the DRAM small pieces of 4 256M mode with serial or parallel connection is packaged together, forms a storage module that memory capacity is 1G.Because the electric connection of reaching between small pieces with the metal wire sections that forms patterning is not feature of the present invention, thus no longer be described in further detail, to avoid that the present invention is caused unnecessary restriction.
In addition, the present invention also discloses the schematic diagram that a kind of small pieces with a plurality of different sizes or difference in functionality form an encapsulation module, and as shown in Figure 9, it shows that the small pieces of difference in functionality or different sizes finish the vertical view of encapsulation.Clearly, these small pieces modules are the system in package (System-In-Package that are made of a plurality of small pieces; SIP); In the present embodiment, these small pieces comprise micro treatmenting device 305 (microprocessor means), storage arrangement 310 (memory means) or storage control device 315 (memory controller means) at least; Wherein have a plurality of weld pads on the active face of each small pieces, and form the metal wire sections of multiple bar chart case at the weld pad of each small pieces, with series connection or wiring (layout) mode in parallel be electrically connected adjacent small pieces and be electrically connected element and form and be electrically connected.
Because it is similar to form the process of modular encapsulation process and aforesaid Fig. 3 to Fig. 5, so be summarized as follows.
At first, as shown in Figure 3, one substrate 20 is provided first, and dispose a polymer material layer 30 at substrate 20, this polymer material layer 30 is one to have flexible sticky material, such as silicon rubber (siliconerubber), silicones (silicone resin), elasticity PU, porous PU, acrylic rubber (acrylic rubber) or small pieces cutting glue etc.Then, use fetching device (not being shown among the figure) with the back side up and the small pieces that dispose a plurality of registration marks 402 (comprise 305; 310; 315; 320) pick up one by one and be pasted to polymer material layer 30 on the substrate 20, wherein small pieces (comprise 305; 310; 315; 320) be (to comprise 312 with the weld pad on the active face; 321; 322) be connected with polymer material layer 30 on the substrate 20; Then, a kind of two-stage thermosetting cement material 70 is formed on another substrate 60; Similarly, this substrate 60 also can be glass, quartz, pottery, circuit board or sheet metal (metal foil) etc.Then, can optionally carry out a prebake conditions program; For example: under 80 ℃～100 ℃ environment, toasted 5～10 minutes; So that the two-stage thermosetting cement material 70 of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 60.Be stressed that at this thickness of this two-stage thermosetting cement material 70 needs (to comprise 305 greater than chip; 310; 315; 320) thickness, for example: 3～20mil.Then, substrate 60 and two-stage thermosetting cement material 70 are turned, make two-stage thermosetting cement material 70 towards the back side that is fixed in each small pieces 410 on the substrate 20, as shown in Figure 3.Then, with substrate 60 and two-stage thermosetting cement material 70 to pressing down, so that two-stage thermosetting cement material 70 can (comprise 305 with each small pieces; 310; 315; 320) coat, as shown in Figure 4.Follow again, carry out a baking program, for example: under 120 ℃～250 ℃ environment, toast 20～60 minutes, so that two-stage thermosetting cement material 70 can be cured, to form a packaging body 70A.Follow again, can select first substrate 60 to be broken away from packaging body 70A, to expose the surface of packaging body 70A, then, can optionally use cutter (not being shown among the figure), form many Cutting Roads 414 on the surface of packaging body 70A.Then, polymer material layer 30 is separated with packaging body 70A, for example polymer material layer 30 is inserted in the groove with deionized water with substrate 20, polymer material layer 30 is separated with packaging body 70A.Clearly, this packaging body 70A coats each small pieces and (comprises 305; 310; 315; 320), and only expose each small pieces and (comprise 305; 310; 315; 320) a plurality of weld pads on the active face (comprise 312; 321; 322).Because adhesive body 70A has many Cutting Roads 414 in its surface, therefore, after polymer material layer 30 was peeled off with packaging body 70A, the stress on the packaging body 70A can be offset by these Cutting Road 414 formed zones, so can effectively solve the problem of packaging body warpage.
Then, please refer to Figure 10, it is to show the cutaway view of Fig. 8 along the cutaway view of BB line segment and Fig. 9 along the CC line segment.As shown in figure 10, at the use of packaging body 70A processing procedure (the Redistribution Layer that reroutes; RDL) form the metal wire sections 90 of a plurality of fan-outs (fan out), an end of this metal wire sections 90 with (comprise 305 in small pieces; 310; 315; 320) each weld pad on the active face (comprises 312; 321; 322) be electrically connected, the other end then (comprises 305 to small pieces; 310; 315; 320) edge extends; For example, the active face that exposes to the open air at the LED of Fig. 8 packaging body 70A forms the metal wire sections of a plurality of patternings, one end of the metal wire sections 90 of these patternings is electrically connected respectively each this P electrode 321 and each the N electrode 322 on the active face of each light-emitting diode 320, and the other end then is connected to respectively on the outward extending metal wire sections altogether.
Then; on metal wire sections 90, (for example: polyimide) form a protective layer 80 with manufacture of semiconductor; with the metal wire sections 90 that covers a plurality of patternings, and in forming a plurality of openings (shown in 82 among Fig. 5) on the other end of each metal wire sections 90.At last, on each opening, form again a plurality of electric connection elements 330, in order to (comprise 305 as small pieces; 310; 315; 320) contact that externally is electrically connected, wherein, this is electrically connected element 330 can be metal coupling (metal bump) or tin ball (solder ball), as shown in figure 10.Then, can carry out last cutting to packaging body 70A, to form many modules 1000 of finishing encapsulation procedure.Clearly, each small pieces in each module 1000 of present embodiment (comprise 305; 310; 315; 320) 5 faces are all coated by two-stage thermosetting cement material 70 formed packaging body 70A, only have small pieces (to comprise 305; 310; 315; 320) active face is to be coated by two-stage thermosetting cement material 70.Simultaneously, also by the configuration of registration mark 402, so that metal wire sections 90 and be electrically connected element 330 and all can accurately (comprise 312 with weld pad; 321; 322) connect, the reliability of the module 1000 of finishing encapsulation is improved.And in the above-described embodiments, also the polymer material layer 30 on the substrate 20 can be replaced with a kind of photosensitive material layer (photo sensitive layer).Because other processes are all identical, so repeat no more.
In another preferred embodiment of the present invention, can form a fin 60 at the back side of packaging body, as shown in figure 11; The mode of its formation can be chosen in the aforementioned processing procedure, substrate 60 is not removed first, because this substrate 60 can be metallic plate, so can be as fin.In addition, also can select first by the thinning processing procedure, so that after the back side of the small pieces that packed body coats exposes to the open air out, on the back side of the small pieces that exposed to the open air, paste again a fin, as shown in figure 12.
Then, please refer to Figure 13, it is the generalized section of another specific embodiment of the present invention.As shown in figure 13, at first, dispose a photosensitive material layer (photo sensitive layer) 30 at substrate 20, then, use fetching device (not being shown among the figure) with the back side up and the small pieces 410 that dispose a plurality of registration marks 402 pick up one by one and be pasted to photosensitive material layer 30 on the substrate 20, wherein small pieces 410 are to be connected with photosensitive material layer 30 on the substrate 20 with the weld pad 412 on the active face; Then, coating polymer material layer 700 on substrate 20 and part small pieces 110, and use a die device 500 that polymer material layer 700 is flattened, so that polymer material layer 700 forms the surface of a planarization, and so that polymer material layer 700 is filled between the small pieces 410, and coat each small pieces 410, as shown in figure 14.The material of this polymer material layer 700 can be the materials such as silica gel, epoxy resin, acrylic acid (acrylic) or benzocyclobutene (BCB).
Then, can be optionally the polymer material layer 700 of planarization be carried out a baking program, so that polymer material layer 700 solidifies.Follow again, carry out demoulding program, with die device 500 with solidify after polymer material layer 700 separate, with the surface of the polymer material layer 700 that exposes planarization.Yet, be stressed that, owing to photosensitive material layer 30 is not cured, thus can directly substrate 20 and photosensitive material layer 30 be peeled off, and photosensitive material layer 30 is stayed on the active face of small pieces 410, as shown in figure 15.
Clearly, this polymer material layer 700 coats five faces of each small pieces 410, and the active face of each small pieces 410 is then covered by photosensitive material layer 30.Then, can optionally use cutter (not being shown among the figure), form many Cutting Roads 414 at the back side of the polymer material layer 700 that has solidified; And the degree of depth of each Cutting Road 414 is 0.5 Mill (mil) to 1 Mill, and in addition, the width of Cutting Road 414 then is 5 microns to 25 microns.In a preferred embodiment, this Cutting Road 414 can be mutual vertical interlaced, and the reference line when can be used as actual cutting small pieces.Because polymer material layer 700 has many Cutting Roads 414 at the back side with respect to the active face of small pieces 410, therefore, after photosensitive material layer 30 and polymer material layer 700 are peeled off, stress on the polymer material layer 700 can be offset by these Cutting Road 414 formed zones, so can effectively solve the problem of packaging body warpage.
Because the back side of each small pieces 410 has all disposed a plurality of registration marks 402, therefore, in small pieces 410 have been positioned on the substrate 20 exactly, so can calculate weld pad 412 positions on each small pieces 410; Then, use manufacture of semiconductor directly to form a plurality of openings 32 at photosensitive material layer 30, in order to the weld pad 412 on each small pieces 410 is exposed to the open air out, as shown in figure 16.Then, re-use the processing procedure that reroutes (Redistribution Layer; RDL) metal wire sections 90 of a plurality of fan-outs of formation (fanout) on a plurality of weld pads 412 of small pieces 410; Then, with manufacture of semiconductor in forming a protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening), as shown in figure 17.At last, on each opening 82, form again a plurality of electric connection elements 420, so that as the small pieces 410 external contacts that are electrically connected, wherein, this is electrically connected element 420 can be metal coupling (metal bump) or tin ball (solder ball), as shown in figure 18.
Then, polymer material layer 700 is carried out last cutting, to form many small pieces of finishing encapsulation procedure.Clearly, 5 faces of in the present embodiment each small pieces 410 are all coated by polymer material layer 700, only have the active face of small pieces 410 to be coated by photosensitive material layer 30, as shown in figure 19.Simultaneously, also by the configuration of registration mark 402, so that metal wire sections 90 and electric connection element 420 all can accurately be connected with weld pad 412, the reliability of the small pieces 410 of finishing encapsulation is improved.
Similarly, above-mentioned process also applicable small pieces that will a plurality of identical (or not identical) forms an encapsulation module, such as Fig. 8 or shown in Figure 9, owing to other processes are all identical with Figure 10 to Figure 12, thus repeat no more, its finish after the encapsulation module as shown in figure 20.Clearly, the encapsulating structure of Figure 20 comprises: a plurality of small pieces and each small pieces all have active face and lower surface, and dispose a plurality of weld pads on active face; Then, coat a plurality of small pieces and expose each small pieces active face with packaging body; Then, use a photoactive material layer to cover a plurality of weld pads on the active face of each small pieces and expose this a plurality of weld pads; Follow again, be electrically connected with a plurality of weld pads that dispose on an end of the metal wire sections of many fan-outs and the active face; Then; be used for covering active face and each strip metal line segment of each small pieces with a protective layer again and expose the other end of each strip metal line segment and the other end of a plurality of electric connection element and each strip metal line segment is electrically connected, wherein above-mentioned packaging body is a kind of two-stage thermosetting cement material.Certainly, present embodiment also can form a fin 60 at the back side of packaging body, because it is all identical with previous described embodiment to form the process of fin, so repeat no more.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (9)
1. method for packing that small pieces reconfigure is characterized in that comprising:
One first substrate is provided, has a upper surface and a lower surface, and configuration one polymer material layer on its upper surface;
A plurality of small pieces are provided, and each those small pieces has an active face and a back side, and disposes a plurality of weld pads on this active face;
Pick and place those small pieces, this active face of each these small pieces is seated on this polymer material layer to cover crystal type;
One second substrate is provided, has a upper surface and a lower surface, and configuration one two-stage thermosetting cement material on its upper surface;
Carry out a splice program, this second substrate and this two-stage thermosetting cement material are engaged with the upper surface of this first substrate, so that should coat each these small pieces by two-stage thermosetting cement material;
Carry out a baking program, so that should be solidified to form a packaging body that solidifies by two-stage thermosetting cement material;
Break away from this packaging body, this polymer material layer and this first substrate are broken away from this packaging body, with those weld pads on this active face that exposes those small pieces;
Form the metal wire sections of many fan-outs, an end of each this metal wire sections and those weld pads are electrically connected;
Form a protective layer, with active face and each this metal wire sections that covers each these small pieces and the other end that exposes each this metal wire sections;
Form a plurality of electric connection elements, those other ends that are electrically connected element and those metal wire sections are electrically connected; And
Cut this packaging body, to form a plurality of separately packaging bodies independently.
2. method for packing as claimed in claim 1 is characterized in that, this packaging body is encapsulation one small pieces.
3. method for packing as claimed in claim 1 is characterized in that, this packaging body is a plurality of small pieces of encapsulation.
4. method for packing that small pieces reconfigure is characterized in that comprising:
One first substrate is provided, has a upper surface and a lower surface, and configuration one photosensitive material layer on its upper surface;
A plurality of small pieces are provided, and each those small pieces has an active face and a back side, and disposes a plurality of weld pads on this active face;
Pick and place those small pieces, this active face of each these small pieces is seated on this photosensitive material layer to cover crystal type;
One second substrate is provided, has a upper surface and a lower surface, and configuration one two-stage thermosetting cement material on its upper surface;
Carrying out a splice program, is that this second substrate and this two-stage thermosetting cement material are engaged with the upper surface of this first substrate, and each these small pieces is coated;
Carry out a baking program, so that should be solidified to form a packaging body that solidifies by two-stage thermosetting cement material;
Break away from this packaging body, this photosensitive material layer is broken away from this packaging body, with those weld pads on this active face that exposes those small pieces;
Form the metal wire sections of many fan-outs, an end of each this metal wire sections and those weld pads are electrically connected;
Form a protective layer, with active face and each this metal wire sections that covers each these small pieces and the other end that exposes each this metal wire sections;
Form a plurality of electric connection elements, those other ends that are electrically connected element and those metal wire sections are electrically connected; And
Cut this packaging body, to form a plurality of separately packaging bodies independently.
5. method for packing as claimed in claim 4 is characterized in that, this packaging body is encapsulation one small pieces.
6. method for packing as claimed in claim 4 is characterized in that, this packaging body is many small pieces of encapsulation.
7. method for packing that small pieces reconfigure is characterized in that comprising:
One first substrate is provided, has a upper surface and a lower surface, and configuration one photosensitive material layer on its upper surface;
A plurality of small pieces are provided, and each those small pieces has an active face and a back side, and disposes a plurality of weld pads on this active face;
Pick and place those small pieces, this active face of each these small pieces is seated on this photosensitive material layer to cover crystal type;
One second substrate is provided, has a upper surface and a lower surface, and configuration one polymer material layer on its upper surface;
Form a packaging body, this second substrate and this polymer material layer are engaged with the upper surface of this first substrate, so that this polymer material layer coats each these small pieces and is filled between each these small pieces;
Break away from this first substrate, to expose this photosensitive material layer and this packaging body;
Form a plurality of openings, on this photosensitive material layer, form a plurality of openings, with a plurality of weld pads on this active face that exposes each these small pieces;
Form the metal wire sections of many fan-outs, an end of each this metal wire sections and those weld pads are electrically connected;
Form a protective layer, with active face and each this metal wire sections that covers each these small pieces and the other end that exposes each this metal wire sections;
Form a plurality of electric connection elements, those other ends that are electrically connected element and those metal wire sections are electrically connected; And
Cut this packaging body, to form a plurality of separately packaging bodies independently.
8. encapsulating structure that small pieces reconfigure is characterized in that comprising:
One has the small pieces an of active face and a lower surface, disposes a plurality of weld pads on this active face;
One packaging body, in order to five faces coating these small pieces and expose this active face and this active face on a plurality of weld pads, wherein this packaging body is a two-stage thermosetting cement material;
The metal wire sections of many fan-outs is formed on this active face, and one end and those weld pads are electrically connected, and its other end is formed on this packaging body;
One protective layer is in order to active face and those metal wire sections that covers these small pieces and the other end that exposes those metal wire sections; And
A plurality of electric connection elements are with the other end electric connection of those metal wire sections.
9. encapsulating structure that small pieces reconfigure is characterized in that comprising:
Many small pieces, each these small pieces have an active face and a lower surface and dispose a plurality of weld pads on this active faces;
One packaging body, in order to five faces and the active face that exposes those small pieces and those weld pads on those active faces of coating those small pieces, wherein this packaging body is a two-stage thermosetting cement material;
The metal wire sections of many fan-outs is formed on those active faces, and one end and those weld pads are electrically connected, and its other end is formed on this packaging body;
One protective layer is in order to those active faces and those metal wire sections that covers those small pieces and the other end that exposes those metal wire sections; And
The other end of a plurality of electric connection elements and those metal wire sections is electrically connected.
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| CN103107103A (en) * | 2011-11-11 | 2013-05-15 | 北京大学深圳研究生院 | Reconfigurable operator array structure scale extension method based on wafer level packaging (WLP) form |
| CN103151316B (en) * | 2011-12-06 | 2017-10-20 | 北京大学深圳研究生院 | A kind of Expansion method of the reconfigurable operator array structure based on MCP package form |
| CN103489790A (en) * | 2012-06-14 | 2014-01-01 | 智瑞达科技（苏州）有限公司 | Encapsulation method for chip fan-out encapsulation structure |
| CN103094128A (en) * | 2012-12-15 | 2013-05-08 | 华天科技（西安）有限公司 | Fan-out Panel Level ball grid array (BGA) package part manufacture process |
| CN105789146A (en) * | 2014-12-16 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | Stacked die package structure |
| DE102016004592B4 (en) * | 2016-04-14 | 2017-11-02 | Mühlbauer Gmbh & Co. Kg | System and method for aligning electronic components |
| CN106449685B (en) * | 2016-10-24 | 2018-09-21 | 江苏钜芯集成电路技术股份有限公司 | Spray-bonding craft for sensitive chip encapsulation |
| CN106684119B (en) * | 2017-03-01 | 2024-02-20 | 华进半导体封装先导技术研发中心有限公司 | Chip packaging structure and preparation method thereof |
| CN109196668B (en) * | 2018-08-24 | 2022-05-03 | 深圳市汇顶科技股份有限公司 | Packaging method and packaging structure of light-emitting device and electronic equipment |
| CN115692592A (en) | 2020-04-16 | 2023-02-03 | 隆达电子股份有限公司 | Light emitting element |
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