CN101452862B - Encapsulation method with grains reconfigured - Google Patents

Encapsulation method with grains reconfigured Download PDF

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Publication number
CN101452862B
CN101452862B CN2007101961010A CN200710196101A CN101452862B CN 101452862 B CN101452862 B CN 101452862B CN 2007101961010 A CN2007101961010 A CN 2007101961010A CN 200710196101 A CN200710196101 A CN 200710196101A CN 101452862 B CN101452862 B CN 101452862B
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crystal grain
metal wire
wire sections
active surface
substrate
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CN101452862A (en
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王钟鸿
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BERMUDA CHIPMOS TECHNOLOGIES Co Ltd
Chipmos Technologies Inc
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BERMUDA CHIPMOS TECHNOLOGIES Co Ltd
Chipmos Technologies Inc
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Abstract

The invention relates to an encapsulation structure for reconfiguring crystal grains. The encapsulation structure comprises a crystal grain, an encapsulating body, a plurality of conduction columns, a plurality of patternized metal wire sections, a patternized protective layer and a plurality of conduction elements, wherein the active surface of the crystal grain is provided with a plurality of welding pads; the encapsulating body covers the crystal grain and exposes the plurality of the welding pads on the crystal grain; the plurality of the conduction columns run through the encapsulating body to form a first conduction end and a second conduction end at two ends respectively; the plurality of the welding pads of the crystal grain are in electric connection with each first conduction end of the plurality of the conduction columns through each patternized metal wire section; the patternized protective layer is used for covering the plurality of the welding pads of each crystal grain and the plurality of the patternized metal wire sections and exposes one surface outwards extended from part of the plurality of the patternized metal wire sections; and the plurality of the conduction elements are in electric connection with the exposed surface outwards extended from part of the patternized metal wire sections.

Description

The method for packing that crystal grain reconfigures
Technical field
The invention relates to the method that a kind of crystal grain reconfigures, particularly in the packaging body packaging body of crystal grain, form conductive pole as the conduction end points, in order to electrically connect and will a plurality ofly finish encapsulate and separately independently crystal grain carry out the method for packing of storehouse.
Background technology
Semi-conductive technology has developed suitable rapidly, therefore microminiaturized semiconductor grain (Dice) must have the demand of diversified function, make semiconductor grain must in very little zone, dispose more I/o pad (I/O pads), thereby make the density of metal pin (pins) also improve fast.Therefore, early stage leaded package technology has been not suitable for the high-density metal pin; So develop the encapsulation technology that a kind of ball array (Ball Grid Array:BGA), the ball array encapsulation is except having than the more highdensity advantage of leaded package, and its tin ball also relatively is not easy infringement and distortion.
Popular along with 3C Product, for example: mobile phone (Cell Phone), PDA(Personal Digital Assistant) or iPod etc., all the System on Chip/SoC of many complexity must be put into a very little space, therefore be this problem of solution, a kind of being called " wafer-class encapsulation (wafer level package; WLP) " encapsulation technology develops out, and it can just encapsulate wafer earlier before cut crystal becomes many crystal grain.United States Patent (USP) announces the 5th, 323, and No. 051 patent has promptly disclosed this " wafer-class encapsulation " technology.Yet, this " wafer-class encapsulation " technology is along with the increase of the weld pad on the crystal grain active surface (pads) number, make that the spacing of weld pad (pads) is too small, except meeting causes the problem of signal coupling or signal interference, also can cause the problems such as reliability reduction of encapsulation because the weld pad spacing is too small.Therefore, after crystal grain further dwindles again, make aforesaid encapsulation technology all can't satisfy.
For solving this problem, United States Patent (USP) announces the 7th, 196, disclosed a kind of wafer that will finish semiconductor technology for No. 408, after test and cutting, with test result is that good crystal grain (good die) reapposes on another substrate, and then carry out packaging technology, so, make these intercrystallines that reapposed have the spacing of broad, so (fan out) technology that stretches out is for example used in distribution that can the weld pad on the crystal grain is suitable, therefore can effectively solve because of spacing too small, the problem that causes signal coupling or signal to disturb except meeting.
Yet, for making semiconductor chip that less and thin encapsulating structure can be arranged, before carrying out the wafer cutting, can carry out thinning to wafer earlier and handle, for example wafer is thinned to 2-20mil, and then cuts into many crystal grain in back of the body mill (backside lapping) mode.This crystal grain through the thinning processing through reconfiguring on another substrate, forms a packaging body with injection molded with a plurality of crystal grain again; Because crystal grain is very thin, make that packaging body also is very thin, so after packaging body disengaging substrate, the stress of packaging body itself can make packaging body generation warpage increases follow-up difficulty of carrying out cutting technique.
In addition, after the wafer cutting, reconfigure when another substrate, be of a size of greatly because the size of new substrate is more original, therefore plant in the ball technology follow-up, can can't aim at, its encapsulating structure reliability reduces.For this reason, the invention provides a kind ofly before carrying out wafer cutting, it can solve effectively and can't aim at when planting ball and packaging body produces the problem of warpage to form registration mark (alignment mark) at chip back surface.
In addition, in the process of whole encapsulation, also can produce when planting ball, manufacturing equipment can produce local excessive pressure to crystal grain, and may damage the problem of crystal grain; Simultaneously, also may because the material of planting ball causes and crystal grain on weld pad between resistance value become big, and influence the problems such as performance of crystal grain.
Summary of the invention
Because the damage crystal grain described in the background of invention and influence the problems such as performance of crystal grain.Main purpose of the present invention is before planting ball in that a kind of method for packing that reconfigures at crystal grain is provided, and forms conductive pole earlier with as the conduction end points in packaging body, therefore can reduce and plant the damage of ball to crystal grain, so can effectively improve the yield and the reliability of manufacturing.
Another main purpose of the present invention is before planting ball in that a kind of method for packing that reconfigures at crystal grain is provided, and selects suitable electric conducting material to form conductive pole, therefore can reduce the material of planting ball and the resistance value between weld pad, so can effectively put forward the performance of crystal grain.
In addition, the present invention also has a main purpose at the method for packing that provides a kind of crystal grain to reconfigure, it can be reconfigured in 12 inches crystal grain that wafer cut out on the substrate of 8 inches wafers, so can effectively use the sealed in unit that promptly has of 8 inches wafers, and need not to re-establish the sealed in unit of 12 inches wafers, can reduce the packaging cost of 12 inches wafers.
A main purpose more of the present invention makes that at the method for packing that provides a kind of crystal grain to reconfigure the chip that encapsulates all is " known is normally functioning chip " (Known good die), can save encapsulating material, so also can reduce the cost of technology.
The present invention discloses the method for packing that a kind of crystal grain reconfigures, and comprises: a plurality of crystal grain are provided, and each crystal grain has and disposes a plurality of weld pads on an active surface and the active surface; Pick and place on a plurality of crystal grain to one substrates, each crystal grain is to cover crystal type the adhesion coating that active surface and is disposed on the substrate to be connected; Form polymer material layer on substrate and part crystal grain; Cover a die device to the macromolecular material layer,, make polymer material layer riddle a plurality of intergranules and coat each crystal grain with the planarization polymer material layer; Break away from die device, to expose a surface of polymer material layer; Break away from substrate, with active surface and each weld pad that exposes each crystal grain, to form a packaging body; Form a plurality of through holes, each through hole is to be formed in the packaging body; Forming a plurality of conductive poles, is to be packed into an electric conducting material in a plurality of through holes and to make the two ends of each conductive pole form one first conduction end points and one second conduction end points; Forming the metal wire sections of a plurality of patternings, is each the first conduction end points that a plurality of weld pads of the active surface of each crystal grain is electrically connected to a plurality of conductive poles by the metal wire sections of each patterning; Forming a patterned protective layer, is in order to a plurality of weld pads on the active surface that covers each crystal grain and the metal wire sections of a plurality of patternings, and exposes a partly outward extending surface of the metal wire sections of patterning to the open air; Forming a plurality of conducting elements, is that a plurality of conducting elements are formed on the outward extending surface of the metal wire sections that exposes the part patterning to the open air; And the cutting packaging body, to form a plurality of crystal grain of independently finishing encapsulation separately.
The present invention discloses the encapsulating structure that a kind of crystal grain reconfigures in addition, comprising: a crystal grain, dispose a plurality of weld pads on its active surface; One packaging body is in order to coat crystal grain and to expose a plurality of weld pads of the active surface of crystal grain; A plurality of conductive poles are to run through packaging body and form the first conduction end points respectively in the two ends of each conductive pole and the second conduction end points; The metal wire sections of a plurality of patternings is each the first conduction end points that a plurality of weld pads of the active surface of crystal grain is electrically connected to a plurality of conductive poles by the metal wire sections of each patterning; One patterned protective layer is in order to a plurality of weld pads on the active surface that covers each crystal grain and the metal wire sections of a plurality of patternings, and exposes a partly outward extending surface of the metal wire sections of a plurality of patternings; And a plurality of conducting elements, be to be electrically connected on the outward extending surface of metal wire sections of the part patterning that has exposed to the open air.
The present invention discloses the encapsulating structure of another kind of crystal grain storehouse, comprising: first crystal grain and second crystal grain, all dispose a plurality of weld pads on the active surface of each crystal grain; One packaging body is in order to coat each crystal grain and to expose the weld pad of each crystal grain; A plurality of conductive poles run through the packaging body of each crystal grain and form one first conduction end points respectively in the two ends of each conductive pole and one second conduction end points; The metal wire sections of a plurality of patternings is electrically connected to the weld pad of each crystal grain on the first conduction end points of each conductive pole; One patterned protective layer is in order to each weld pad on the active surface that covers each crystal grain and the metal wire sections of each patterning, and an outward extending surface of exposing the metal wire sections of part patterning to the open air; A plurality of conducting elements form electric connection with the surface of the metal wire sections of the part patterning that has exposed to the open air; And a crystal grain stack architecture is electrically connected to each the second conduction end points on first crystal grain on each conducting element of second crystal grain.
Description of drawings
For making purpose of the present invention, structure, feature and function thereof are had further understanding, below cooperate embodiment and accompanying drawing to describe in detail as after, wherein:
Fig. 1 is the schematic diagram of expression prior art;
Fig. 2 A to Fig. 2 B is disclosed technology according to the present invention, the vertical view at the front and the back side of the substrate with registration mark;
Fig. 3 A to Fig. 3 H is disclosed technology according to the present invention, each step schematic diagram of the encapsulating structure that formation crystal grain reconfigures; And
Fig. 3 I is disclosed technology according to the present invention, the schematic diagram of the encapsulating structure of expression crystal grain storehouse.
Embodiment
The present invention is the method for packing that a kind of crystal grain reconfigures in this direction of inquiring into, a plurality of crystal grain is reconfigured on another substrate the method that encapsulates then.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.Apparently, execution of the present invention does not limit the specific details that the operator had the knack of of the mode of crystal grain storehouse.On the other hand, the detailed step of last part technologies such as well-known chip generation type and chip thinning is not described in the details, with the restriction of avoiding causing the present invention unnecessary.Yet, for preferred embodiment of the present invention, can be described in detail as follows, yet except these were described in detail, the present invention can also implement in other embodiments widely, and scope of the present invention do not limited, its with after claim be as the criterion.
In the semiconductor packaging process in modern times, all are wafers (wafer) of having finished FEOL (Front End Process) with one, form a thin insulating barrier (for example forming a SiO2 layer) in the front of wafer earlier, and then carry out thinning and handle (Thinning Process), for example the thickness with chip is ground between the 2-20mil; Then, the cutting (sawing process) of carrying out wafer is to form many crystal grain; Then, use fetching device (pick and place) that many crystal grain are positioned on another substrate 100, as shown in Figure 1 one by one.Clearly, the crystal grain interval region on the substrate 100 is bigger than crystal grain 110, therefore, and can be so that these be by 110 spacings with broad of crystal grain of being reapposed, so distribution that can the weld pad on the crystal grain 110 is suitable.In addition, the employed method for packing of present embodiment, 12 inches crystal grain that wafer cut out 110 can be reconfigured on the substrate 100 of 8 inches wafers, so can effectively use the sealed in unit that promptly has of 8 inches wafers, and need not to re-establish the sealed in unit of 12 inches wafers, can reduce the packaging cost of 12 inches wafers.Be stressed that then, embodiments of the invention do not limit the substrate that uses 8 inches wafer size, as long as it can provide the function of carrying, for example: glass, quartz, pottery, circuit board or sheet metal (metal foil) etc., all can be used as the substrate 100 of present embodiment, so the shape of substrate 100 is not limited yet.
Please refer to Fig. 2 A and Fig. 2 B, is the vertical view that expression has the substrate (or wafer) of registration mark.Shown in Fig. 2 A, be to be illustrated in and on the x-y direction at the back side of wafer 20 (shown in Fig. 2 B), to be provided with a plurality of registration marks (alignment mark) 202, shown in Fig. 2 B.Known to prior statement, after wafer (not expression in the drawings) is through cutting, form a plurality of crystal grain, when again these crystal grain being configured in new substrate 20 one by one again, because the crystal grain interval region between the new substrate 20 is bigger than the crystal grain of configuration again, the ball step (ball mount) of planting in follow-up packaging technology is understood and can't be aimed at, and conducting element (expression) in the drawings is formed on accurately desired position on the back side of crystal grain, and cause the reliability of encapsulating structure to reduce.Therefore, in specific embodiments of the invention, the crystal grain after the cutting can be seated on the substrate 20 accurately by the registration mark 202 of substrate 20 chip back surfaces.At this, the mode that forms registration mark 202 can be utilized photoetch (photo-etching) technology, and it is to form a plurality of registration marks 202 at the back side of substrate 20 and on the x-y direction, and it is shaped as the sign of cross.In addition, the mode that forms registration mark 202 also comprises and utilizes laser label (laser mark) technology.
Then, Fig. 3 A to Fig. 3 I is each steps flow chart schematic diagram of the encapsulating structure that reconfigures of expression the present invention disclosed crystal grain.At first, be that a plurality of crystal grain 210 are reconfigured on the new substrate 20 (shown in Fig. 2 B) that has a plurality of registration marks overleaf; Wherein, on substrate 20, dispose an adhesion coating 30, this adhesion coating 30 is a rubber-like sticky material, for example silicon rubber (silicon rubber), silicones (silicon resin), elasticity PU, porous PU, acrylic rubber (acrylic rubber) or crystal grain cutting glue etc.Then, use fetching device (not representing in the drawings) crystal grain 210 to be placed and is pasted to the adhesion coating 30 on the substrate 20 one by one, wherein crystal grain 210 is to cover crystalline substance (flip chip) mode the weld pad on its active surface 212 to be connected with adhesion coating 30 on the substrate 20, as shown in Figure 3A.Then, coating polymer material layer 40 on substrate 20 and part crystal grain 210, polyimide for example, and use a die device 600 that polymer material layer 40 is flattened, make polymer material layer 40 form the surface of a planarization, and make polymer material layer 40 be filled between the crystal grain 210 and coat five faces of each crystal grain 210.
Then, shown in Fig. 3 B, can be optionally the polymer material layer 40 of planarization be carried out a baking program, so that polymer material layer 40 solidifies.Follow again, carry out demoulding program, with die device 600 with solidify after polymer material layer 40 separate, with the surface of the polymer material layer 40 that exposes planarization; Then, use cutter (not being shown among the figure) on the surface of polymer material layer 40, to form most bar Cutting Roads 410, shown in Fig. 3 B; The degree of depth of each bar Cutting Road 410 is 0.5-1 Mill (mil), and the width of Cutting Road 410 then is 5 to 25 microns.In preferable a embodiment, this Cutting Road 410 can be mutual vertical interlaced, and the reference line when can be used as actual cutting crystal grain.
Then, shown in Fig. 3 C, in polymer material layer 40 formed packaging bodies, form a plurality of through holes (through hole) 420, the mode that wherein forms through hole 420 comprises in etched mode, remove partly polymer material layer 40, make in packaging body, to form a plurality of through holes 420.And then, in each through hole 420, form and insert electric conducting material to form a plurality of conductive poles 50, the method of its formation comprises electric conducting material, be packed in a plurality of through holes 420 in the mode of electroplating (plating), and the upper and lower surface exposure that makes each conductive pole 50 is in the two ends on the upper and lower surface of packaging body, form the first conduction end points 502 and the second conduction end points 504 respectively, shown in Fig. 3 D.
At this, the step that forms through hole 420 can be at polymer material layer 40 with before substrate 20 separates, and its objective is has preferable support force to produce the problem of bursting apart not make packaging body when carrying out etching when forming through hole 420 in packaging body.
At last, polymer material layer 40 is separated with adhesion coating 30, its method is for example put into the groove with deionized water with polymer material layer 40 with substrate 20, makes polymer material layer 40 separate with adhesion coating 30, to form a packaging body; Five faces of each crystal grain 210 of this packaging body coats, and again the weld pad on the active surface of each crystal grain 210 212 is exposed to the open air out.Owing on the back side with respect to the active surface of crystal grain 210 of packaging body most bar Cutting Roads 410 are arranged, therefore, after polymer material layer 40 and substrate 20 were peeled off, the stress on the packaging body can be offset by these Cutting Road 410 formed zones, so can solve the problem of packaging body warpage effectively.
Then, shown in Fig. 3 E, it is the metal wire sections 60 that between a plurality of weld pads 212 and a plurality of first conduction end points 502, forms the patterning of a plurality of fan-outs (fan out) shape, one end of the metal wire sections 60 of each patterning and the 212 corresponding and electric connections of a plurality of weld pads on each crystal grain 210, the outward extending other end of the metal wire sections of a plurality of patternings then is electrically connected on each first conduction end points 502, and the mode of its formation comprises: earlier a metal level (not representing on the figure) is formed on a plurality of weld pads 212 and the first conduction end points 502; Then, utilize the semiconductor technology, for example develop and etching; In forming photoresist layer (on figure, not representing) on the metal level with patterning; Then, carry out an etching step, to remove metal level partly, with the metal wire sections 60 that forms a plurality of patternings, and an end of the metal wire sections 60 of patterning is electrically connected on a plurality of weld pads 212 of active surface of each crystal grain 210, and the outward extending other end then is electrically connected on each first conduction end points 502 of a plurality of conductive poles 50.
Next, shown in Fig. 3 F, be on the metal wire sections 60 of a plurality of weld pads 212 of the active surface of a plurality of crystal grain 210 and a plurality of patternings, to form a patterned protective layer 70, in order to the weld pad on the active surface of protecting each crystal grain 210 212.Its step that forms patterned protective layer 70 comprises: form a protective layer (expression in the drawings) with a plurality of weld pads 212 of the active surface that covers a plurality of crystal grain 210 and the metal wire sections 60 of a plurality of patternings; Utilize semiconductor process techniques, for example develop and etching, the photoresist layer (not expression in the drawings) that forms a patterning earlier is on protective layer; Be etched with and remove partly protective layer, with a surface of the outward extending other end of the metal wire sections 60 that exposes a plurality of patternings, and the back side of this outward extending end points is that the first conduction end points 502 with a plurality of conductive poles 50 electrically connects; The photoresist layer of strip patternization.Next, be on the outward extending surface of the metal wire sections 60 of a plurality of patternings that expose to the open air, to form a plurality of conducting elements 80, wherein conducting element 80 be formed in a plurality of patternings metal wire sections 60 to the extend outwards of the side of crystal grain 210 and be positioned on the front of the first conduction end points 502 end partly, and formation electrically connects, shown in Fig. 3 G, can be metal coupling (metal bump) or tin ball (solder ball) at this conducting element 80.At last, cut this packaging body, to form a plurality of crystal grain of independently finishing encapsulation separately, shown in Fig. 3 H.
In the present invention, can select suitable electric conducting material to form conductive pole 50, thus the resistance value of 212 of conducting element 80 and weld pads can be reduced, so can effectively put forward the performance of crystal grain 210.And be electrically connected to the side of crystal grain 210 with the metal wire sections 60 of a plurality of patternings and a plurality of weld pads 212, therefore, when carrying out the connection of conducting element 80, strength when process equipment is planted ball can directly not be added on the weld pad 212 of crystal grain 210, therefore can reduce damage, so can effectively improve the yield and the reliability of manufacturing to crystal grain 210.
Then, in Fig. 3 I, be the schematic diagram of the encapsulating structure of expression crystal grain storehouse.In the present embodiment, be the push-down stack on the crystal grain 210 independently separately that will finish encapsulation, the conducting element 80 that its second conduction end points 504 and lower floor that has finished the crystal grain of encapsulation has at the middle and upper levels finished the crystal grain of encapsulation forms and electrically connects, to form a stack architecture.
Though the present invention discloses as above with aforesaid preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of alike operator; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, therefore scope of patent protection of the present invention must be looked being as the criterion that the appended claim scope of this specification defined.

Claims (4)

1. the method for packing that crystal grain reconfigures is characterized in that, comprising:
A plurality of crystal grain are provided, and each this crystal grain has on an active surface and this active surface and disposes a plurality of weld pads;
Pick and place on described crystal grain to one substrate, each this crystal grain is to cover crystal type the adhesion coating that this active surface and is disposed on this substrate to be connected;
Form a polymer material layer on this substrate and this crystal grain of part;
Cover a die device to this polymer material layer,, make this polymer material layer riddle described intergranule and coat each this crystal grain with this macromolecular material of planarization;
Break away from this die device, to expose a surface of this polymer material layer;
Form a plurality of through holes among this polymer material layer;
Breaking away from this substrate, is with this polymer material layer and this substrate separation, with this active surface, each this weld pad and each this through hole that exposes each this crystal grain, to form a packaging body;
Form a plurality of conductive poles, an electric conducting material is filled described through hole and make the upper and lower surface of each this conductive pole be exposed to the two ends of this packaging body upper and lower surface and form one first conduction end points respectively and one second conduction end points;
Form the metal wire sections of a plurality of patternings, described a plurality of weld pads of this active surface of each this crystal grain are electrically connected to each this first conduction end points of described a plurality of conductive poles by the metal wire sections of each this patterning;
Form a patterned protective layer,, and expose a partly outward extending surface of the metal wire sections of described a plurality of patternings in order to the described a plurality of weld pads on this active surface that covers each crystal grain and the metal wire sections of described a plurality of patternings;
Form a plurality of conducting elements, described a plurality of conducting elements are formed at metal wire sections outward extending of the described a plurality of patternings of part that exposed to the open air should the surface on; And
Cut this packaging body, to form a plurality of crystal grain of independently finishing encapsulation separately.
2. the method for packing that crystal grain as claimed in claim 1 reconfigures is characterized in that, wherein said a plurality of through holes form in etched mode.
3. the method for packing that crystal grain as claimed in claim 1 reconfigures is characterized in that, wherein said a plurality of conductive poles form in the mode of electroplating.
4. the method for packing that crystal grain as claimed in claim 1 reconfigures is characterized in that, the mode that wherein forms the metal wire sections of described a plurality of patternings comprises:
Form a metal level on the described a plurality of weld pads on this active surface of described a plurality of crystal grain and described a plurality of first conduction end points;
Form one and have the photoresist layer of patterning on this metal level; And
Remove partly this metal level forming the metal wire sections of described a plurality of patternings, and electrically connect described a plurality of weld pad and described a plurality of first conduction end points.
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US8642385B2 (en) * 2011-08-09 2014-02-04 Alpha & Omega Semiconductor, Inc. Wafer level package structure and the fabrication method thereof
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US9412662B2 (en) * 2014-01-28 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and approach to prevent thin wafer crack
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