CN101471228A - Continuous cavity used for forming amorphous silicon film - Google Patents
Continuous cavity used for forming amorphous silicon film Download PDFInfo
- Publication number
- CN101471228A CN101471228A CNA2007101601208A CN200710160120A CN101471228A CN 101471228 A CN101471228 A CN 101471228A CN A2007101601208 A CNA2007101601208 A CN A2007101601208A CN 200710160120 A CN200710160120 A CN 200710160120A CN 101471228 A CN101471228 A CN 101471228A
- Authority
- CN
- China
- Prior art keywords
- chamber
- working chamber
- amorphous silicon
- order
- majority
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a continuous chamber for forming crystal silicon films, comprising a plurality of chambers which are linearly arranged and connected to lead the internal spaces to communicate. A movable gate is arranged between each two adjacent chambers, the two adjacent chambers can be communicated/ isolated by the opening/closing of the moveable gate, in the plurality of chambers, the chamber located at the head end is a feeding chamber, the chamber located at the tail end is a discharge chamber, the chamber located between the feeding chamber and the discharge chamber is defined as at least a p layer shaping chamber, at least an I layer shaping chamber and at least a n layer shaping chamber, and an entrance of the feeding chamber and an outlet of the discharge chamber both have one moveable gate, thereby achieving the continuous shaping and enhancing the efficiency of generating speed.
Description
Technical field
The building mortion of right and wrong crystal silicon film of the present invention is relevant, is meant a kind of continuous cavity in order to the shaping amorphous silicon film especially.
Background technology
Press, recently because energy shortage and the surging problem of oil price, make alternative energy source be subjected to extensive attention, and among the alternative energy source technology, utilize solar energy to produce the solar cell of electric energy, promptly because it has the speciality of the high feature of environmental protection, and cause and note widely and attracted huge development resources.
The amorphous silicon thin-film solar cell of present main flow, amorphous silicon membrane in its manufacture process is to be key, present general manufacture is that (Plasma-EnhanceChemical Vapor Deposition PECVD) makes shaping by the plasma auxiliary chemical vapor deposition method.And amorphous silicon membrane is deposited by p-a-Si:H, i-a-Si:H and three layers of material of n-a-Si:H (being p-i-n) to form.
P-i-n film now, technical what be shaped, mainly be to treat that deposit (for example glass plate) is horizontally placed in the cavity, the p layer that is shaped in regular turn again in this cavity, i layer, and n layer film outwards shift out this again and treat deposit after finishing.And this kind forming mode, because three layers all be at same cavity internal shaping, therefore in the process of conversion sedimentary deposit, raw-gas in this cavity must be extracted out, the gas of corresponding sedimentary deposit that reinjects, and control well after the concentration, vapour deposition next time could be begun.This kind mode causes the wait on the processing procedure, and the film shaped time is elongated, and is unfavorable for quick production.
Summary of the invention
Main purpose of the present invention is to provide a kind of continuous cavity in order to the shaping amorphous silicon film, and its various amorphous silicon membrane is separately to carry out, and can improve speed of production thus.
A time purpose of the present invention is to provide a kind of continuous cavity in order to the shaping amorphous silicon film, its its can multi-disc progressive forming in continuous chamber.
Edge is that in order to reach aforementioned purpose, foundation a kind of continuous cavity in order to the shaping amorphous silicon film provided by the present invention is characterized in that, includes:
Most chambers, linear array and be connected and the inner space is connected is provided with a dodge gate between every two adjacent these chambers, and can be made two adjacent these chambers communicate/isolate by the On/Off of this dodge gate;
In this majority chamber, be that the chamber that definition is positioned at head end is the pan feeding chamber, the chamber that is positioned at tail end is a discharge chamber, and the chamber between this pan feeding chamber and this discharge chamber defines at least one p floor working chamber, at least one i floor working chamber and at least one n floor working chamber;
The inlet of this pan feeding chamber and the outlet of this discharge chamber all have a dodge gate.
Wherein: respectively have a conveying arrangement in this majority chamber; And also include a card casket, and being provided with most tablets to be filmed in this card casket, this majority tablet to be filmed is vertical, and this majority conveying arrangement carries this card casket and orders about this card casket and move in this majority chamber.
Wherein: respectively the roof of this p layer working chamber, i layer working chamber and n layer working chamber is provided with a gas operated device; This card casket top is provided with an air intake, and when this card casket was positioned at respectively this p layer working chamber, i layer working chamber and n layer working chamber, the gas operated device of its pairing chamber was to be positioned at this card casket top, and is connected with this air intake.
Wherein: respectively this gas operated device has a lifting valve, and is connected with the air intake of this card casket when descending with this lifting valve.
Wherein: putting in order of this majority chamber is pan feeding chamber, p floor working chamber, i floor working chamber, n floor working chamber and discharge chamber.
Wherein: putting in order of this majority chamber is: pan feeding chamber, p floor working chamber, i floor working chamber, n floor working chamber and discharge chamber more than two.
Wherein: putting in order of this majority chamber is pan feeding chamber, p floor working chamber, i floor working chamber, n floor working chamber, p floor working chamber, i floor working chamber, n floor working chamber and discharge chamber.
Can reach the effect of progressive forming and raising speed of production thus.
Description of drawings
In order to describe technical characterstic of the present invention place in detail, below enumerate three preferred embodiments and conjunction with figs. the explanation as after, wherein:
Fig. 1 is the configuration diagram of the present invention's first preferred embodiment.
Fig. 2 is the local member schematic diagram of the present invention's first preferred embodiment, shows the state between gas operated device and the card casket.
Fig. 3 is the local member schematic top plan view of the present invention's first preferred embodiment, shows the conveying arrangement in the chamber and the state of dodge gate.
Fig. 4 is the action schematic diagram of the present invention's first preferred embodiment, shows the state that the lifting valve is connected with the air intake of card casket.
Fig. 5 is the configuration diagram of the present invention's second preferred embodiment.
Fig. 6 is the configuration diagram of the present invention's the 3rd preferred embodiment.
Embodiment
As shown in Figure 1 to Figure 3, a kind of continuous cavity 10 in order to the shaping amorphous silicon film that the present invention's first preferred embodiment is provided mainly has:
In this majority chamber 11, be that the chamber 11 that justice is positioned at head end is pan feeding chamber 111, the chamber 11 that is positioned at tail end is discharge chamber 119, and the chamber 11 between this pan feeding chamber 111 and this discharge chamber 119 defines a p floor working chamber 113, an i floor working chamber 115 and a n floor working chamber 117, and arranges according to the mode of pan feeding chamber 111, p floor working chamber 113, i floor working chamber 115, n floor working chamber 117 and discharge chamber 119.Respectively have a conveying arrangement 15 in this majority chamber 11, in the present embodiment, this conveying arrangement 15 is made up of most driven wheel.
One card casket 21, the top is provided with an air intake 22, is provided with most tablets to be filmed 29 in this card casket 21, and this majority tablet 29 to be filmed is to be vertical, and this majority conveying arrangement is this card casket 21 of carrying and orders about this card casket 21 and move in this majority chamber 11.
Respectively the roof of this p layer working chamber 113, i layer working chamber 115 and n layer working chamber 117 is provided with a gas operated device 17, and respectively this gas operated device 17 has a lifting valve 18.When this card casket 21 was positioned at respectively this p layer working chamber 113, i layer working chamber 115 and n layer working chamber 117, the gas operated device 17 of its pairing chamber 11 was to be positioned at this card casket 21 tops, and was connected with this air intake 22 when descending with this lifting valve 18.
The outlet of the inlet of this pan feeding chamber 111 and this discharge chamber 119 all has a dodge gate 13.
Please consult Fig. 1 again, the present invention mainly is to insert this card casket 21 after earlier the dodge gate 13 of this pan feeding chamber 111 being opened when operation, this dodge gate 13 is closed again.Through (this gas treatment program is the known technology in present technique field after the predetermined gas treatment, hold and do not describe in detail), again the dodge gate 13 between this pan feeding chamber 111 and this p floor working chamber 113 is opened, utilize conveying arrangement and this p floor working chamber 113 interior conveying arrangements in this pan feeding chamber 111 to move this card casket 21, this card casket 21 is entered in this p layer working chamber 113, again this dodge gate 13 is closed.Then as shown in Figure 4, drive that this lifting valve 18 descends and the air intake 22 that is connected in this card casket 21 can import film forming gas, and passes through the surface of this majority tablet 29 to be filmed according to guiding.Then enter this i layer working chamber 115 and this n layer working chamber 117 more in regular turn with after carrying out as the film forming program in the p layer working chamber 113, all is shaped finishing, promptly enter this discharge chamber 119 wait operators and take out this card casket 21.
By continuous cavity of the present invention, can allow into/the amorphous silicon film progressive forming in regular turn of discharging and p, i, n layer, reach the effect of quick production and progressive forming
Please consult Fig. 5 again, a kind of continuous cavity 30 in order to the shaping amorphous silicon film that the present invention's second preferred embodiment is provided is taken off first embodiment before mainly generally being same as, and difference is:
Putting in order of this majority chamber is pan feeding chamber 111 ', p floor working chamber 113 ', two i floor working chamber 115 ', n floor working chamber 117 ' and discharge chamber 119 '.
Thus, can solve i layer amorphous silicon film and when being shaped, take long problem.
Take off first embodiment before all the other structures of this second embodiment and the effect that can reach all generally are same as, hold no longer to give and give unnecessary details.
Please consult Fig. 6 again, a kind of continuous cavity 50 in order to the shaping amorphous silicon film that the present invention's the 3rd preferred embodiment is provided is taken off first embodiment before mainly generally being same as, and different plasma is:
Putting in order of this majority chamber is pan feeding chamber 111 ", p floor working chamber 113 ", i floor working chamber 115 ", n floor working chamber 117 ", p floor working chamber 113 ", i floor working chamber 115 ", n floor working chamber 117 " and discharge chamber 119 ".
Thus, but progressive forming goes out double-deck p-i-n framework.
Take off first embodiment before all the other structures of this 3rd embodiment and the effect that can reach all generally are same as, hold no longer to give and give unnecessary details.
As from the foregoing, the effect that can reach of the present invention is:
One, improves speed of production: be that branch drives into by various amorphous silicon film OK, and be under the continuous cavity framework, to be shaped, so its speed of production can More to improve than known technology.
Two, a multi-disc is shaped continuously: continuous cavity framework of the present invention, Can supply once to insert multi-disc tablet to be filmed, and it is continuous to reach a multi-disc The effect that is shaped.
Claims (7)
1. the continuous cavity in order to the shaping amorphous silicon film is characterized in that, includes:
Most chambers, linear array and be connected and the inner space is connected is provided with a dodge gate between every two adjacent these chambers, and can be made two adjacent these chambers communicate/isolate by the On/Off of this dodge gate;
In this majority chamber, be that the chamber that definition is positioned at head end is the pan feeding chamber, the chamber that is positioned at tail end is a discharge chamber, and the chamber between this pan feeding chamber and this discharge chamber defines at least one p floor working chamber, at least one i floor working chamber and at least one n floor working chamber;
The inlet of this pan feeding chamber and the outlet of this discharge chamber all have a dodge gate.
2. according to the described continuous cavity of claim 1, it is characterized in that, wherein: respectively have a conveying arrangement in this majority chamber in order to the shaping amorphous silicon film; And also include a card casket, and being provided with most tablets to be filmed in this card casket, this majority tablet to be filmed is vertical, and this majority conveying arrangement carries this card casket and orders about this card casket and move in this majority chamber.
3. according to the described continuous cavity of claim 2, it is characterized in that wherein: respectively the roof of this p layer working chamber, i layer working chamber and n layer working chamber is provided with a gas operated device in order to the shaping amorphous silicon film; This card casket top is provided with an air intake, and when this card casket was positioned at respectively this p layer working chamber, i layer working chamber and n layer working chamber, the gas operated device of its pairing chamber was to be positioned at this card casket top, and is connected with this air intake.
4. according to the described continuous cavity of claim 3, it is characterized in that wherein: respectively this gas operated device has a lifting valve, and when descending, be connected with the air intake of this card casket with this lifting valve in order to the shaping amorphous silicon film.
5. according to the described continuous cavity of claim 4, it is characterized in that wherein: putting in order of this majority chamber is pan feeding chamber, p floor working chamber, i floor working chamber, n floor working chamber and discharge chamber in order to the shaping amorphous silicon film.
6. according to the described continuous cavity of claim 4, it is characterized in that wherein: putting in order of this majority chamber is: pan feeding chamber, p floor working chamber, i floor working chamber, n floor working chamber and discharge chamber more than two in order to the shaping amorphous silicon film.
7. according to the described continuous cavity of claim 4 in order to the shaping amorphous silicon film, it is characterized in that wherein: putting in order of this majority chamber is pan feeding chamber, p floor working chamber, i floor working chamber, n floor working chamber, p floor working chamber, i floor working chamber, n floor working chamber and discharge chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101601208A CN101471228A (en) | 2007-12-24 | 2007-12-24 | Continuous cavity used for forming amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101601208A CN101471228A (en) | 2007-12-24 | 2007-12-24 | Continuous cavity used for forming amorphous silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101471228A true CN101471228A (en) | 2009-07-01 |
Family
ID=40828571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101601208A Pending CN101471228A (en) | 2007-12-24 | 2007-12-24 | Continuous cavity used for forming amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101471228A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531847A (en) * | 2016-12-29 | 2017-03-22 | 常州大学 | Black silicon based tunneling contact solar cell online preparation equipment |
| WO2022027994A1 (en) * | 2020-08-03 | 2022-02-10 | 苏州迈正科技有限公司 | Coating apparatus, method and system, solar cell, module, and power generation system |
-
2007
- 2007-12-24 CN CNA2007101601208A patent/CN101471228A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531847A (en) * | 2016-12-29 | 2017-03-22 | 常州大学 | Black silicon based tunneling contact solar cell online preparation equipment |
| WO2022027994A1 (en) * | 2020-08-03 | 2022-02-10 | 苏州迈正科技有限公司 | Coating apparatus, method and system, solar cell, module, and power generation system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101636522B (en) | Vacuum coating apparatus | |
| CN103094403B (en) | PECVD prepares string type equipment and the technique of two-sided heterojunction solar battery | |
| CN104694903A (en) | Continuous physical vacuum coating equipment | |
| CN103872175B (en) | The method and apparatus of resistance and transparency in optimization TCO solar cell films | |
| CN101471228A (en) | Continuous cavity used for forming amorphous silicon film | |
| CN101339967B (en) | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment | |
| CN110093594B (en) | Be used for large tracts of land PECVD substrate transmission structure | |
| US20180127875A1 (en) | Apparatus for performing selenization and sulfurization process on glass substrate | |
| CN202499905U (en) | Chemical vapor deposition equipment | |
| CN206915994U (en) | A kind of 3D glass heat pressing forming machines | |
| CN109563622A (en) | Even flow plate and the even device of air of process cavity | |
| CN102021537A (en) | Thin film deposition equipment | |
| CN203866406U (en) | Boron diffusion furnace baffle structure capable of achieving uniform diffusion of reaction gas | |
| CN213232487U (en) | ALD heating furnace | |
| CN101488443A (en) | Batch forming system of amorphous silicon | |
| CN202643839U (en) | Plasma chemical vapor deposition (CVD) system for heterojunction solar cells | |
| CN202626288U (en) | Plasma enhanced chemical vapor deposition (PECVD) system configuration for heterojunction solar cell | |
| CN210092132U (en) | Intelligent preparation device for planar ultrathin photovoltaic device | |
| CN102277562B (en) | Multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for thin-film solar batteries | |
| CN101593788A (en) | The laminating method of solar module | |
| TWM599322U (en) | Water-level vertical magnetron sputtering coating equipment | |
| CN201146168Y (en) | Gas exhauster of directly-arranging type energy-saving lamp tube | |
| CN115125516B (en) | Multi-piece type high-precision special reaction cavity | |
| CN217431270U (en) | Waste gas purifying equipment | |
| CN202415688U (en) | Reactant gas transmission system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090701 |