CN115125516B - Multi-piece type high-precision special reaction cavity - Google Patents
Multi-piece type high-precision special reaction cavity Download PDFInfo
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- CN115125516B CN115125516B CN202210684563.1A CN202210684563A CN115125516B CN 115125516 B CN115125516 B CN 115125516B CN 202210684563 A CN202210684563 A CN 202210684563A CN 115125516 B CN115125516 B CN 115125516B
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- cavity
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- flange
- cover plate
- electric cylinder
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 69
- 238000005485 electric heating Methods 0.000 claims description 12
- 210000004907 gland Anatomy 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 26
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
Abstract
The invention relates to the technical field of semiconductor processing, and particularly discloses a multi-piece type high-precision special reaction cavity which comprises a reaction cavity, an execution electric cylinder, an electric cylinder top plate, a guide shaft, an inner cavity upper cavity, an inner cavity lower cavity and a hook. The arrangement of the structure can ensure that the multi-chip high-precision special reaction cavity can not only meet the requirement of simultaneously reacting a plurality of wafers, but also meet the requirement of automatic use.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a multi-piece type high-precision special reaction cavity.
Background
At present, a multi-piece type high-precision special reaction cavity is a device cavity which takes gas as a carrier and realizes coating of compound gas on a wafer. Along with the continuous progress of social science and technology, the requirements on processing efficiency and the like of a reaction cavity are continuously improved, and although the prior art has realized the design of a multi-plate process ALD machine, a plurality of problems still exist in the specific use process, such as the design by utilizing a metal cassette method, and the unstable phenomenon exists in the wafer conveying process, so that the manual plate taking mode is adopted, but the working efficiency is reduced; when the automatic method is adopted, the phenomenon of sheet falling occurs, so that the working efficiency is reduced, and the use requirement of the current society cannot be well met. Meanwhile, the design of the multi-wafer process ALD machine is realized by using a multi-wafer ALD furnace method, but the design can cause low use efficiency of gas and precursor, and huge waste is generated, and the multi-wafer process ALD machine is not suitable for long-term use, so that the prior art can enable a plurality of wafers to react at the same time, but has a plurality of limitations, can not meet the requirement of the development of the prior society, and a reaction cavity capable of meeting the simultaneous reaction of a plurality of wafers and the automatic use is urgently needed.
Disclosure of Invention
The invention aims to provide a multi-piece type high-precision special reaction chamber, and aims to solve the technical problems that a reaction machine in the prior art cannot meet the requirement of reacting a plurality of wafers and can meet the requirement of automatic use.
In order to achieve the above purpose, the multi-piece type high-precision special reaction cavity comprises a reaction cavity, an execution electric cylinder, an electric cylinder top plate, a guide shaft, an inner cavity upper cavity, an inner cavity lower cavity and a hook, wherein the execution electric cylinder is arranged above the reaction cavity, the electric cylinder top plate is arranged above the execution electric cylinder, the inner cavity upper cavity is arranged inside the reaction cavity, the guide shaft penetrates through the reaction cavity and is arranged between the electric cylinder top plate and the inner cavity upper cavity, the inner cavity lower cavity is arranged below the inner cavity upper cavity, an upper sieve plate is arranged in the inner cavity upper cavity, a lower sieve plate is arranged in the inner cavity lower cavity, and the hook is arranged at the lower end of the upper sieve plate.
The multi-piece type high-precision special reaction cavity further comprises an electric heating wire and a baffle plate, wherein the baffle plate is arranged in the inner cavity lower cavity, and the electric heating wire is arranged on two sides of the lower sieve plate.
The reaction cavity comprises an outer cavity, a bearing gland, an electric cylinder connecting plate, an evacuating upright post, an air inlet joint, a round cover plate, a cover plate and an upper view mirror cover plate, wherein the cover plate is arranged above the outer cavity, the round cover plate is arranged above the cover plate, the upper view mirror cover plate is arranged above the round cover plate, the air inlet joint is arranged above the upper view mirror cover plate, the evacuating upright post is arranged above the round cover plate, the electric cylinder connecting plate is arranged above the evacuating upright post, the bearing gland is arranged above the electric cylinder connecting plate, and the bearing gland is sleeved on the outer surface wall of the guide shaft.
The reaction cavity further comprises a door plate, a combined hinge, a sight glass cover plate, a water channel interface flange and a thermocouple interface flange, wherein the door plate is arranged on one side of the outer cavity through the combined hinge, the sight glass cover plate is arranged on one side of the door plate, the water channel interface flange is arranged on one side of the outer cavity, and the thermocouple interface flange is arranged on one side of the outer cavity.
The reaction cavity further comprises a bottom interface flange, a bottom connecting flange and a second electrode flange, wherein the bottom interface flange is arranged at the lower end of the outer cavity, the other end of the bottom interface flange is arranged at the lower end of the baffle plate, the bottom connecting flange is arranged at the lower end of the bottom interface flange, and the second electrode flange is arranged at the lower end of the bottom connecting flange.
The reaction cavity further comprises a first electrode flange, the first electrode flange is arranged at the lower end of the outer cavity, and one end of the electric heating wire is arranged at the lower end of the first electrode flange.
The reaction cavity further comprises a pressure sensor interface flange, and the pressure sensor interface flange is arranged at the lower end of the outer cavity.
According to the multi-piece type high-precision special reaction chamber, the execution cylinder is fixed through the cylinder top plate and the guide shaft, the guide shaft is fixed with the upper cavity of the inner cavity, the upper cavity of the inner cavity is lifted to the set middle position, the gate valve is opened, a wafer to be processed is conveyed into the reaction chamber from the LOAD chamber through the gate valve, at the moment, the upper cavity of the inner cavity is connected with four fixed hooks through bolts under the carrier, the execution cylinder is lifted to the set highest position again to hook the whole wafer carrier, the LOAD wafer carrier plate is retracted to the gate valve to be closed, the execution cylinder is lowered to the set lowest position, the whole carrier plate is placed on the lower sieve plate, the upper cavity of the inner cavity is in a closed state, the state is from the wafer to be processed to the end of the reaction, after the reaction is completed, the four hooks lift the whole carrier plate to the set highest position through the execution cylinder, the wafer carrier plate of the LOAD chamber is immediately entered, the execution cylinder is lowered to the middle position, the execution cylinder is lifted to the set highest position, the LOAD wafer carrier plate is automatically, the wafer carrier plate can be retracted to the closed, and the wafer carrier plate can be closed, the wafer can be placed in the inner cavity and the special reaction chamber can be closed, the multiple cavities can be closed, and the high-precision of the wafer can be met, and the special reaction chamber can be simultaneously closed, and the condition can be met, and the condition can be closed by the four position and the position of the LOAD chamber can be well.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a bottom view of a multi-piece high precision dedicated reaction chamber of the present invention.
FIG. 2 is a front view of a multi-piece high precision dedicated reaction chamber of the present invention.
FIG. 3 is a left side view of a multi-piece high precision dedicated reaction chamber of the present invention.
FIG. 4 is a right side view of a multi-piece high precision dedicated reaction chamber of the present invention.
FIG. 5 is a cross-sectional view of a multi-piece high precision dedicated reaction chamber of the present invention.
FIG. 6 is a top view of a multi-piece high precision dedicated reaction chamber of the present invention.
1-performing electric cylinder, 2-electric cylinder top plate, 3-guide shaft, 4-bearing gland, 5-electric cylinder connecting plate, 6-evacuating upright post, 7-air inlet joint, 8-round cover plate, 9-cover plate, 10-door plate, 11-outer cavity, 12-pressure sensor interface flange, 13-first electrode flange, 14-electric heating wire, 15-bottom interface flange, 16-second electrode flange, 17-bottom connecting flange, 18-sight glass cover plate, 19-combined hinge, 20-water channel interface flange, 21-thermocouple interface flange, 22-sight glass cover plate, 23-inner cavity upper cavity, 24-hook, 25-inner cavity lower cavity, 26-upper sieve plate, 27-lower sieve plate and 28-baffle plate.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, in the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Referring to fig. 1 to 6, the present invention provides a multi-piece high precision special reaction chamber, which comprises a reaction chamber, an execution cylinder 1, a cylinder top plate 2, a guide shaft 3, an inner chamber upper chamber 23, an inner chamber lower chamber 25 and a hook 24, wherein the execution cylinder 1 is arranged above the reaction chamber, the cylinder top plate 2 is arranged above the execution cylinder 1, the inner chamber upper chamber 23 is arranged inside the reaction chamber, the guide shaft 3 penetrates through the reaction chamber and is arranged between the cylinder top plate 2 and the inner chamber upper chamber 23, the inner chamber lower chamber 25 is arranged below the inner chamber upper chamber 23, an upper sieve plate 26 is arranged in the inner chamber upper chamber 23, a lower sieve plate 27 is arranged in the inner chamber lower chamber 25, and the hook 24 is arranged at the lower end of the upper sieve plate 26.
In this embodiment, the electric cylinder 1 is bolted through the electric cylinder top plate 2 and the guide shaft 3, and at the same time, the guide shaft 3 is bolted to the upper cavity 23 of the inner cavity, wherein the guide shaft 3 is slidably connected with the reaction cavity, the number of hooks 24 is plural, four hooks 24 are preferably disposed, and each hook 24 is fixed below the upper screen plate 26 through bolts, at this time, four hooks 24 fixed on the upper cavity 23 through bolting are below the carrier.
Further, the multi-piece type high-precision special reaction chamber further comprises an electric heating wire 14 and a baffle plate 28, wherein the baffle plate 28 is arranged in the inner cavity lower cavity 25, and the electric heating wire 14 is arranged on two sides of the lower sieve plate 27.
In this embodiment, the electric heating wire 14 is fixedly connected to the inside of the reaction cavity, the baffle plate 28 is fixedly connected to the lower end of the middle part of the lower sieve plate 27, and the wafer can be heated and reacted by heating the heating wire 14, and the baffle plate 28 conducts drainage on the gas filled in the wafer reaction process, so that the gas filled in the wafer can better contact with the wafer, and is convenient for better reaction with the wafer.
Further, the reaction chamber includes outer chamber 11, bearing gland 4, electric cylinder connecting plate 5, evacuation stand 6, air intake joint 7, round cover plate 8, apron 9 and upper view mirror apron 22, apron 9 sets up in the top of outer chamber 11, round cover plate 8 sets up in the top of apron 9, upper view mirror apron 22 sets up in the top of round cover plate 8, air intake joint 7 sets up in the top of upper view mirror apron 22, evacuation stand 6 sets up in the top of round cover plate 8, electric cylinder connecting plate 5 sets up in the top of evacuation stand 6, bearing gland 4 sets up in the top of electric cylinder connecting plate 5, and bearing gland 4 cover locates the extexing wall of guide shaft 3
In this embodiment, the upper view mirror cover plate 22 is fixedly connected to the middle part of the upper end of the round cover plate 8, and the air inlet connector 7 is arranged at the middle part of the upper end of the upper view mirror cover plate 22, the evacuation upright posts 6 are fixedly connected to the two sides of the upper view mirror cover plate 22, the bearing gland 4, the electric cylinder connecting plate 5, the evacuation upright posts 6, the round cover plate 8 and the cover plate 9 are sequentially communicated, the guide shaft 3 penetrates through the round cover plate 8 and is in sliding connection, the air inlet structure and the upper view mirror cover plate 22 are both positioned between the round cover plate 8 and the electric cylinder connecting plate 5, the electric cylinder 1 is fixedly connected to the upper part of the electric cylinder connecting plate 5, and the output end of the electric cylinder 1 is fixedly connected with the electric cylinder top plate 2.
Further, the reaction chamber further comprises a door plate 10, a combined hinge 19, a sight glass cover plate 18, a water channel interface flange 20 and a thermocouple interface flange 21, wherein the door plate 10 is arranged on one side of the outer chamber 11 through the combined hinge 19, the sight glass cover plate 18 is arranged on one side of the door plate 10, the water channel interface flange 20 is arranged on one side of the outer chamber 11, and the thermocouple interface flange 21 is arranged on one side of the outer chamber 11.
In the present embodiment, the door panel 10 is hinged to one side of the outer cavity 11 by a combination hinge 19, and covers one side opening of the outer cavity 11.
Further, the reaction chamber further comprises a bottom interface flange 15, a bottom connecting flange 17 and a second electrode flange 16, wherein the bottom interface flange 15 is arranged at the lower end of the outer chamber 11, the other end of the bottom interface flange 15 is arranged at the lower end of the baffle plate 28, the bottom connecting flange 17 is arranged at the lower end of the bottom interface flange 15, and the second electrode flange 16 is arranged at the lower end of the bottom connecting flange 17.
The reaction cavity further comprises a first electrode flange 13, the first electrode flange 13 is arranged at the lower end of the outer cavity, and one end of the electric heating wire 14 is arranged at the lower end of the first electrode flange 13.
The reaction chamber further comprises a pressure sensor interface flange 12, the pressure sensor interface flange 12 being arranged at the lower end of the outer chamber.
In this embodiment, the bottom interface flange 15 is fixedly connected with the outer cavity 11, meanwhile, the bottom interface flange 15 is fixedly connected with the lower end of the baffle plate 28, the bottom interface flange 15 is connected with the second electrode flange 16 through the bottom connecting flange 17, the first electrode flange 13 and the pressure sensor interface flange 12 are respectively and fixedly connected below the outer cavity 11, and the electric heating wire 14 penetrates through the first motor flange and is fixedly connected with the first motor flange.
The invention has the following specific use process:
the actuating cylinder 1 is fixed through the cylinder top plate 2 and the guide shaft 3, the guide shaft 3 is fixed with the inner cavity upper cavity 23, the inner cavity upper cavity 23 is lifted to a set middle position, the gate valve is opened, a wafer to be processed is conveyed into the reaction cavity from the LOAD cavity through the gate valve, at the moment, the inner cavity upper cavity 23 is lifted to a set highest position again through the four hooks 24 fixedly connected with bolts under the carrier, then the actuating cylinder 1 is lifted to the set highest position again to hook the whole wafer carrier, the LOAD wafer carrier plate is retracted to the gate valve to be closed, then the actuating cylinder 1 is lowered to the set lowest position, the whole carrier is placed on the lower sieve plate 27, at the moment, the inner cavity upper cavity 23 is in a closed state in the inner cavity lower cavity 25, the state starts to react from the wafer to be processed until the reaction is finished, after the reaction is finished, the four hooks 24 hook the whole carrier to the set highest position through the actuating cylinder 1, the whole carrier is lifted to the set highest position, then the wafer carrier plate of the LOAD cavity enters, and then the actuating cylinder 1 is lowered to the middle position to the set highest position, the whole carrier plate is retracted to the LOAD cavity 24, the LOAD cavity is placed in the closed, and the inner cavity of the LOAD cavity is placed in the lower cavity 25, and the LOAD cavity is closed, and the LOAD cavity is placed in the lower cavity 23.
The above disclosure is only a preferred embodiment of the present invention, and it should be understood that the scope of the invention is not limited thereto, and those skilled in the art will appreciate that all or part of the procedures described above can be performed according to the equivalent changes of the claims, and still fall within the scope of the present invention.
Claims (6)
1. A multi-piece type high-precision special reaction chamber is characterized in that,
the device comprises a reaction cavity, an execution electric cylinder, an electric cylinder top plate, a guide shaft, an inner cavity upper cavity, an inner cavity lower cavity and a hook, wherein the execution electric cylinder is arranged above the reaction cavity, the electric cylinder top plate is arranged above the execution electric cylinder, the inner cavity upper cavity is arranged inside the reaction cavity, the guide shaft penetrates through the reaction cavity and is arranged between the electric cylinder top plate and the inner cavity upper cavity, the inner cavity lower cavity is arranged below the inner cavity upper cavity, an upper sieve plate is arranged in the inner cavity upper cavity, a lower sieve plate is arranged in the inner cavity lower cavity, and the hook is arranged at the lower end of the upper sieve plate;
the reaction cavity comprises an outer cavity, a bearing gland, an electric cylinder connecting plate, an evacuating upright post, an air inlet joint, a round cover plate, a cover plate and an upper view mirror cover plate, wherein the cover plate is arranged above the outer cavity, the round cover plate is arranged above the cover plate, the upper view mirror cover plate is arranged above the round cover plate, the air inlet joint is arranged above the upper view mirror cover plate, the evacuating upright post is arranged above the round cover plate, the electric cylinder connecting plate is arranged above the evacuating upright post, the bearing gland is arranged above the electric cylinder connecting plate, and the bearing gland is sleeved on the outer surface wall of the guide shaft.
2. A multi-plate high precision special reaction chamber as defined in claim 1, wherein,
the multi-piece high-precision special reaction cavity further comprises electric heating wires and baffle plates, wherein the baffle plates are arranged in the inner cavity of the lower cavity, and the electric heating wires are arranged on two sides of the lower sieve plate.
3. A multi-plate high precision special reaction chamber as defined in claim 1, wherein,
the reaction cavity further comprises a door plate, a combined hinge, a sight glass cover plate, a water channel interface flange and a thermocouple interface flange, wherein the door plate is arranged on one side of the outer cavity through the combined hinge, the sight glass cover plate is arranged on one side of the door plate, the water channel interface flange is arranged on one side of the outer cavity, and the thermocouple interface flange is arranged on one side of the outer cavity.
4. A multi-plate high precision special reaction chamber as defined in claim 2, wherein,
the reaction cavity further comprises a bottom interface flange, a bottom connecting flange and a second electrode flange, wherein the bottom interface flange is arranged at the lower end of the outer cavity, the other end of the bottom interface flange is arranged at the lower end of the baffle plate, the bottom connecting flange is arranged at the lower end of the bottom interface flange, and the second electrode flange is arranged at the lower end of the bottom connecting flange.
5. A multi-plate high precision special reaction chamber as defined in claim 2, wherein,
the reaction cavity further comprises a first electrode flange, the first electrode flange is arranged at the lower end of the outer cavity, and one end of the electric heating wire is arranged at the lower end of the first electrode flange.
6. A multi-plate high precision special reaction chamber as defined in claim 5, wherein,
the reaction cavity further comprises a pressure sensor interface flange, and the pressure sensor interface flange is arranged at the lower end of the outer cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210684563.1A CN115125516B (en) | 2022-06-16 | 2022-06-16 | Multi-piece type high-precision special reaction cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210684563.1A CN115125516B (en) | 2022-06-16 | 2022-06-16 | Multi-piece type high-precision special reaction cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115125516A CN115125516A (en) | 2022-09-30 |
| CN115125516B true CN115125516B (en) | 2023-11-07 |
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ID=83378545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210684563.1A Active CN115125516B (en) | 2022-06-16 | 2022-06-16 | Multi-piece type high-precision special reaction cavity |
Country Status (1)
| Country | Link |
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| CN (1) | CN115125516B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214177A (en) * | 1986-03-13 | 1987-09-19 | Hitachi Electronics Eng Co Ltd | Gaseous phase reactor |
| CN209292477U (en) * | 2018-11-26 | 2019-08-23 | 山东元旭光电股份有限公司 | A kind of wafer reprints jig, wafer rehandling facilities and PECVD device |
| CN112763343A (en) * | 2021-01-13 | 2021-05-07 | 北京洁绿环境科技股份有限公司 | High-temperature high-pressure experimental device |
| CN114540797A (en) * | 2022-03-25 | 2022-05-27 | 厦门韫茂科技有限公司 | Material moving structure of continuous ALD coating equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4327206B2 (en) * | 2007-01-30 | 2009-09-09 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus and vertical heat treatment method |
-
2022
- 2022-06-16 CN CN202210684563.1A patent/CN115125516B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214177A (en) * | 1986-03-13 | 1987-09-19 | Hitachi Electronics Eng Co Ltd | Gaseous phase reactor |
| CN209292477U (en) * | 2018-11-26 | 2019-08-23 | 山东元旭光电股份有限公司 | A kind of wafer reprints jig, wafer rehandling facilities and PECVD device |
| CN112763343A (en) * | 2021-01-13 | 2021-05-07 | 北京洁绿环境科技股份有限公司 | High-temperature high-pressure experimental device |
| CN114540797A (en) * | 2022-03-25 | 2022-05-27 | 厦门韫茂科技有限公司 | Material moving structure of continuous ALD coating equipment |
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| Publication number | Publication date |
|---|---|
| CN115125516A (en) | 2022-09-30 |
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