CN101461063A - Substrate inspection and repair device, and substrate evaluation system - Google Patents
Substrate inspection and repair device, and substrate evaluation system Download PDFInfo
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- CN101461063A CN101461063A CNA200680054826XA CN200680054826A CN101461063A CN 101461063 A CN101461063 A CN 101461063A CN A200680054826X A CNA200680054826X A CN A200680054826XA CN 200680054826 A CN200680054826 A CN 200680054826A CN 101461063 A CN101461063 A CN 101461063A
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- 238000007689 inspection Methods 0.000 title claims abstract description 72
- 238000011156 evaluation Methods 0.000 title claims description 11
- 230000008439 repair process Effects 0.000 title abstract 5
- 230000007547 defect Effects 0.000 claims abstract description 98
- 230000002950 deficient Effects 0.000 claims abstract description 45
- 238000012937 correction Methods 0.000 claims description 42
- 238000001514 detection method Methods 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000012790 confirmation Methods 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 7
- 230000003760 hair shine Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
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- 238000012545 processing Methods 0.000 description 19
- 239000004973 liquid crystal related substance Substances 0.000 description 10
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- 238000005401 electroluminescence Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- 241001269238 Data Species 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N2021/9513—Liquid crystal panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
An inspection and repair device is provided with an inspecting unit for inspecting a defect of a substrate on which a TFT array is formed and a repairing unit for repairing a defective array, wherein the inspecting unit and the repairing unit are configured to carry out the defective inspection and the repair of the defect in the same chamber, respectively. With this structure, processes for movements of the substrate are simplified and data transmitting and receiving processes between the device and a central system server are also simplified. For further details, a first inspecting unit outputs pixel coordinates data of a defect portion and defect category data of the defect portion and the repairing unit repairs the detect portion in accordance with the pixel coordinates data of the defect portion and the defect category data detected by the first inspecting unit. A second inspecting unit inspects a driving state of every pixel unit of the TFT array on the substrate, outputs TFT array driving state data, and reinspects a state after the repair.
Description
Technical field
The present invention relates to a kind of liquid crystal, organic EL (Electroluminescence of being used for, electroluminescence) etc. TFT (the Thin Film Transistor in, thin-film transistor) manufacturing step of array base palte and inspection step, and relate to substrate is carried out defect inspection and the device to being revised by the detected defective of defect inspection, and, according to substrate being carried out defect inspection and revises the defective data of gained or check that data come substrate is assessed, and then according to these defective datas or check that data feed back to the substrate evaluation system of the manufacturing step of substrate.
Background technology
Tft array is for example with the switch element of doing the pixel electrode of liquid crystal indicator or organic EL display is selected (switching element).
In the manufacture process of the semiconductor substrate that is forming tft array of crystal liquid substrate or organic EL substrate etc., as shown in Figure 4, comprise in the manufacture process: the inspection step (S100) that tft array of substrate etc. is checked, to the step (S200) of checking that the base board defect found in the step is revised, and the step (S300) that the defective of having revised is reexamined.
As the inspection of tft array substrate, also in manufacturing step, carry out sometimes the step except checking after the manufacturing step that is located at tft array substrate and separately as tft array substrate.In this tft array substrate checking process, the having or not of the defectives such as for example short circuit, broken string or attachment in the tft array that is produced on the tft array substrate, position, defect type etc. are judged and classified.
Can carry out defects detection to tft array by the show state of observing liquid crystal or organic EL, when when observing show state and come tft array checked, for example for liquid crystal panel, must under the state of the liquid crystal indicator that clips liquid crystal layer between tft array substrate and the comparative electrode, check.
In addition, when under not forming half-finished state of liquid crystal indicator, checking, the checking tool that must will have liquid crystal layer and comparative electrode is installed on the tft array substrate, input is used for the drive signal of defects detection to tft array, utilize will this moment the data processing that compares etc. of voltage status and the signal of normal condition, obtain the position coordinates of representing defective or the defective data of defect state.
In this tft array, because of the short circuit of the broken string of scan line (gate line) or holding wire (source electrode line), scan line (gate line) and holding wire (source electrode line), be used for driving the defect inspection of picture element flaw that the bad characteristic of the TFT of pixel causes etc., can for example carry out in the following manner: with comparative electrode ground connection, to gate line whole or a part of with predetermined space for example apply-15V～+ direct voltage of 15V, the whole or part of source electrode line is applied the inspection signal.(for example, the background technology that disclosed of patent documentation 1.)
Each substrate is carried out also can finding out the reason of described defective by defective data is resolved the defects detection except being used for by defective data that defects detection obtained, feed back to the manufacture process of substrate.
As everyone knows, can use the electronics line to come tft array is carried out defects detection.Using this electronics line to carry out in the process of tft array inspection, utilize check pattern, the drive TFT array is on one side to pixel (ITO (Indium-tin-oxide on one side, tin indium oxide) irradiation electronics line electrode), to being detected by the secondary electron that this electron beam irradiation radiated, thus, the voltage waveform that will be applied on the pixel (ITO electrode) converts the secondary electron waveform to, and make it form image according to signal, thus tft array is electrically checked.
These steps are undertaken by independent device such as flaw detection apparatus, defect correction devices, when carrying out described each step on the production line at substrate, dispose these devices according to steps in sequence, to transport substrate along production line.
Fig. 5 is the summary construction diagram that describes in order to the apparatus structure in the existing inspecting substrate.
Among Fig. 5, disposing array detection device 20 and correcting device 30 downstream, carrying out the transmission reception of data between each device and the host server (host server) 50 from the upstream of substrate production line.
At first, with having formed the substrate 100 of array in the leading portion step, put in the array detection device 20.Array detection device 20 uses are aimed at from the position data about substrate that host server 50 is obtained, and carry out array testing technologies afterwards.Array testing technologies for example uses the input probe of electron beam etc. to come real estate is scanned, and carries out defect inspection according to the detection signal of gained, the result of defect inspection is sent to host server 50 with the form of data, and transport substrate 100.
Secondly, will put into the correcting device 30 from the substrate 100 that array detection device 20 transports.Correcting device 30 obtains the result of defect inspections from host server 50, and comes rejected region is revised according to described inspection data, and correction result is sent to host server 50 with the form of data, transports substrate 100 then.
To put into once more the array detection device 20 from the substrate 100 that correcting device 30 transports, the correction state of defect part will be confirmed.
Patent documentation 1: Japanese patent laid-open 5-307192 communique
In the past, array detection device and correcting device are made of independent device respectively, therefore the aligning of the substrate substrate is sent into, installed with respect to transporting of each device in etc. and substrate move related aspect and each device be located at the related fields of carrying out transmitting and receiving data between the central system server and have problems.
The related fields that move at substrate, for example, array detection device and correcting device are the difference independent device, therefore, must send into and transport substrate at each device, when each device need make in the chamber operation for vacuum, need the time to carry out vacuum exhaust respectively and be reduced to atmosphere, therefore there is elongated problem of processing time.
In addition, except the relevant issues that transporting of described substrate sent into, the relevant issues that also have following aligning, promptly, each device must be aimed at the substrate of having sent into, for example, in the correcting device, must make the position coordinates on the substrate of array detection device consistent with the position coordinates on the correcting device.
In addition, there are the following problems in related fields that the transmission of data receives, promptly, when utilization is installed the data that obtained by each, each device that is used to carry out data management that must be provided with to being independent of each device, carry out uploading and downloading of data, and must be provided for the circuit of transmitting and receiving data each device.
For example, array detection device must upload to host server in advance with defect result, correcting device is downloaded the data of this defect result of having uploaded from central system server (host server), and according to revising by the defective locations or the defect type of the substrate that data obtained of this defect result.
In addition, except described problem points, also there are the following problems: about inspection, classification of defects, optical observation, correction that substrate is carried out and the needed a series of processing of these substrates that reexamine; In existing structure, must carry out this three kinds of processing: by testing fixture check, the processing of classification of defects and optical observation, carry out correction afterwards by correcting device, reexamine by reexamining device, and, even, also must carry out the conversion of data between the data form of setting inherently at each device about the data that can handle jointly in the such reason throughout of pixel coordinate or TFT driving condition.
As mentioned above, in existing structure, exist relevant issues etc. that the data of being carried out between relevant issues that substrate moves, each device and the system server that is arranged on central authorities send reception to carry out a series of processing and have problems owing to independent device respectively.These problems can cause the increase of workload, increase and the cost overtime, occupancy (footprint, the memory use amount during operation) of operating time (tact time) to increase.
Especially, the substrate of liquid crystal panel or the employed tft array of organic EL panel, maximize along with the maximization of display unit, in addition, develop and on substrate, carry IC (the Integrated Circuit that uses as driver, integrated circuit) etc. new device supposes that become complicated, data volume of type by the information of defect inspection or defect correction gained also increases, and the importance of the described problem points of deducibility also increases so.
Summary of the invention
Therefore, the objective of the invention is to solve described problem, the correlation step that moves of substrate is simplified, in addition, the step of the transmission reception of the data of being carried out between the system server of device and central authorities is simplified.
Inspecting substrate of the present invention and correcting device comprise: inspection portion, carry out defect inspection to the substrate that is forming tft array; And correction portion, the defective array is revised; And, utilize inspection portion and correction portion and in same chamber, substrate is carried out defect inspection and defect correction, thus, the correlation step that moves of substrate is simplified, in addition, the step of the transmission reception of the data of being carried out between the system server of device and central authorities is simplified.
More specifically, inspection of the present invention portion comprises: the first inspection portion, the rejected region in the presumptive area of substrate is detected, and the pixel coordinate data of output rejected region, the defect type of this rejected region is classified, and output defect type data; And the second inspection portion, the driving condition of the tft array of the pixel unit of substrate is checked, and the driving condition data of output tft array.
The first inspection portion of the present invention comprises: defects detection portion, and detect the rejected region of substrate, and export the pixel coordinate data of rejected region; And the defect type confirmation unit, by to carrying out the classification that the defect type of rejected region is confirmed in optical observation by the detected rejected region of defects detection portion, and output defect type data; The uncorrected substrate that has imported is checked, obtained the pixel coordinate data and the defect type data of existing rejected region on the described substrate.
In addition, this first inspection portion can use following various detection form to the detection of the rejected region that substrate carried out: to the form that detects from the secondary electron that substrate radiates by shining electron beam to the presumptive area of substrate; Or substrate irradiation flown (femto) seconds (10
-15Second) exciting light of laser or semiconductor variable wavelength laser etc. and excite substrate, the form that the variation of the substrate state that excited gained by this is detected etc.
Correction portion of the present invention has LASER Light Source, utilize laser that this LASER Light Source shines and according to the pixel coordinate data and the confirmed defect type data of the detected rejected region of the first inspection portion, cut or partial film forming or carry out the two at described rejected region.
In addition, the second inspection portion of the present invention is used for the retouch through the substrate after the correction portion correction is reexamined, and this second inspection portion has with the pixel of substrate the contact-type probe that contacts, the current potential of described pixel is detected, pixel coordinate data according to the position of passing through described correction portion correction make the contact-type probe contact with the pixel of substrate, current potential to the pixel revised detects thus, with judge revise whether qualified.
In addition, substrate evaluation system of the present invention has described inspecting substrate and correcting device, at a plurality of substrates, to by the pixel coordinate data of the correction pixel of the pixel coordinate data of the rejected region of the first inspection portion gained and defect type data, correction portion and revise content-data and carry out statistical disposition by the correction result data of the second inspection portion gained, and the assessment data of the production line of acquisition substrate feeds back to production line with this assessment data.
Form according to inspecting substrate of the present invention and correcting device, when the TFT driving condition after process is revised reexamines, do not need from correcting device take out the substrate revised and import to the move operation of substrate such the testing fixture once more or do not need to import to substrate in the testing fixture once more yet after the aligning that carries out or the such operation of position alignment of check point, and can be in same chamber, unified a series of processing of checking, revise, reexamining, and need not carry out substrate is transported the move operation of sending into.
In addition, according to the form of inspecting substrate of the present invention and correcting device, about assessment result by the testing fixture gained, need not and the system server of central authorities between upload and download, can therefore, should be able to reduce workload, shorten working hours directly with reference to assessment result.
In addition, the first inspection portion that will check the substrate before revising, the correction portion of substrate and the second inspection portion that revised substrate reexamines is arranged in the chamber, thereby can shorten the importing of substrate and when transporting the needed time of air-breathing exhaust of needed time of opening and closing shutter and chamber shorten working hours, in addition, therefore shared data in each one can dwindle occupancy.In addition, also can the reduction operation personnel.
When utilizing existing structure to carry out the substrate assessment, utilize each device to implement to check step respectively, revise step, reexamine step, therefore, must be corresponding with the inherent data form or the operational processes of each device, but,, can carry out statistical estimation to pixel coordinate data in each step or the unification of TFT driving condition according to substrate evaluation system of the present invention, therefore, can shorten for the needed time of feedback of checking step step before.By shortening the time of this feedback, can shorten that the substrate assessment is informed the leading portion step and improves the needed time, and can improve the yield of substrate.
[invention effect]
According to the present invention, the correlation step that moves of substrate is simplified, in addition, the step of the transmission reception of the data of being carried out between the system server of device and central authorities is simplified.
Description of drawings
Fig. 1 is used for the skeleton diagram that the structure to inspecting substrate of the present invention and correcting device and substrate evaluation system of the present invention describes.
Fig. 2 is used for flow chart that the processing of inspecting substrate of the present invention and correcting device 1 action is described.
Fig. 3 (a), Fig. 3 (b) are used for the figure that the processing of the operating time etc. with inspecting substrate of the present invention and correcting device and existing structure compares.
Fig. 4 is used for the flow chart that the manufacture process to semiconductor substrate describes.
Fig. 5 is used for the summary construction diagram that the apparatus structure to existing inspecting substrate describes.
[explanation of symbol]
1: inspecting substrate and correcting device 2: inspection portion
2A: first 2A1 of inspection portion: defects detection portion
2A2: defect type confirmation unit 2B: the second inspection portion
2a: electronic light electron gun 2b: femtosecond laser
2c: semiconductor variable wavelength laser 2d: detector
2e: micro-CCD camera 2f: contact-type microprobe
2g: voltage application portion 3: correction portion
3A: cutting, the 3a of partial film forming portion: LASER Light Source
4: chamber 5: host server
6: leading portion step 10: substrate evaluation system
20: array detection device 30: correcting device
50: host server 100: substrate
S1～S13, S100～S300: step
Embodiment
Below, with reference to graphic example of the present invention is elaborated.
Fig. 1 is used for the skeleton diagram that the structure to inspecting substrate of the present invention and correcting device and substrate evaluation system of the present invention describes.Among Fig. 1, have inspection portion 2 and correction portion 3 in the chamber 4 of inspecting substrate of the present invention and correcting device 1, substrate evaluation system 10 of the present invention has the structure that the data by this inspecting substrate and correcting device 1 gained is fed back to the leading portion step.
In the semiconductor substrate of employed crystal liquid substrate of display panels or the employed organic EL substrate of organic EL display panel etc., on these substrates, the tft array that liquid crystal display or organic EL show needed inscape or be used for driving these key elements is being set.Pixel with each pixel be set be TFT that unit establishes and the various lines (for example, gate line, source electrode line, bridging line etc.) that are used for driving this TFT in the tft array.
Among the present invention, when making substrate by production line, on substrate, form above-mentioned these each key element or tft array in the leading portion step 6 in the drawings, utilize inspecting substrate and correcting device 1 to carry out defect inspection to being formed on tft array on the substrate etc., and detected rejected region is revised, and then, described retouch reexamined and confirm carry out the processing of next step after this correction.
Deducibility, this inspecting substrate and correcting device 1 detected defective result from leading portion step 6.Therefore, substrate evaluation system 10 of the present invention, according to each check results of a plurality of substrates and statistical obtain defective data by the position data of the coordinate position of the defective on inspecting substrate and the correcting device 1 detected expression substrate, the defect type data of expression defect type etc., and come the main cause of the defective in the leading portion step 6 is assessed, and feed back to leading portion step 6 according to this defective data.
Below, the inspection portion 2 and the correction portion 3 that are had in the chamber 4 to inspecting substrate of the present invention and correcting device 1 describe.
Inspection of the present invention portion 2 has first 2A of inspection portion and second 2B of inspection portion.First 2A of inspection portion is used for checking and this defective part bit position and defect type being detected put in the substrate 100 in the chamber 4 existing defective in leading portion step 6, and has 2A1 of defects detection portion that the defective part bit position is detected and the defect type confirmation unit 2A2 that the type of defective is confirmed.
The 2A1 of defects detection portion can use various forms.Here, the defect type as the 2A1 of defects detection portion detects comprises for example line defect or point defect.Wherein, as line defect, for example comprise source electrode line the open circuit state (disconnection) of (open), state (short circuit) of state (disconnection), source electrode line and gate line short circuit that gate line opens circuit etc.In addition, as point defect, for example, there is the state (short circuit) etc. of state (short circuit), drain line and the bridging line short circuit of state (disconnection), source electrode line and bridging line short circuit that drain line opens circuit.In addition, these off states or short-circuit condition may not be limited to the state of disconnection fully or the state of dead short circuit, also comprise and contain the situation that disconnects with the intermediateness that is connected.
Usually can not know clearly that there is defective in which position on the substrate 100, even if can infer the location of defective in advance, also only deducibility goes out described position in certain scope.Therefore, first 2A of inspection portion must or have zone in certain scope to the All Ranges on the substrate and scans and detect rejected region.Therefore, the 2A1 of defects detection portion detects the defective locations and the defect type of existing defective in the zone on the substrate 100.
Form as the 2A1 of defects detection portion that the defective of substrate is detected by noncontact, following structure is arranged: as the corresponding input probe of substrate, from electronic light electron gun 2a irradiation electron beam, come detecting from the secondary electron that substrate radiated by shining this electron beam by detector 2d.
By the secondary electron that radiates of irradiation electron beam is that current potential by the TFT of substrate determines, therefore, by the secondary electron amount under detected secondary electron amount and the normal condition is compared, can judge zero defect is arranged, and can obtain the defective part bit position of substrate according to the irradiation position of electron beam, in addition, by selecting to be applied to the signal pattern on the tft array, can obtain the type of defective.
In addition, other forms of the 2A1 of defects detection portion that detects as the defective of coming by noncontact substrate have following structure: utilize excitaton source to excite substrate, by detector 2d the excited state of substrate is detected.In addition, expressing identical detector 2d among Fig. 1 with as detector, may not be identical detector to secondary electron detector that detects and the detector that excited state is detected still, can have and each detection form corresponding detectors.As the excitaton source that excites this substrate 100, for example, can use femtosecond laser 2b or semiconductor variable wavelength laser 2c.
Rejected region on the substrate 100 becomes different excited states with normal position.By this different excited state is detected the type of obtaining defective part bit position and defective.In addition, on substrate, the physical characteristic as the expression excited state has various characteristicses such as temperature, refractive index, can as required and suitably select.
Defect type confirmation unit 2A2 confirms the type of described defective to the defect type that is detected by the 2A1 of defects detection portion and classify.The 2A1 of defects detection portion carries out the branch time-like to defect type, is for example to judge according to the intensity of detection signal or the signal pattern that is applied on the tft array, therefore, has error sometimes, is judged to be wrong defect type sometimes.Therefore, before revising, utilize defect type confirmation unit 2A2 to confirm by 3 pairs of rejected regions of correction portion.The affirmation of this defect type is for example to confirm by the taken image of optical viewing system by micro-CCD (Charge Coupled Device, charge coupled device) camera 2e etc. is carried out optical observation.This optical observation can realize by visual photographed images.
Secondly, first 2B of inspection portion reexamines the rejected region of revising through correction portion 3, and the correction state of defective is verified.The purpose of this first inspection 2B of portion is the correction of described rejected region is verified that therefore, having with the pixel is the 2B1 of the portion that reexamines that unit checks.This reexamines the 2B1 of portion, can use for example contact-type microprobe 2f.Contact-type microprobe 2f is a unit with 1 pixel checking object, and directly the electric potential signal to described pixel detects, and thus the driving condition of TFT is checked.
In addition, as the 2A1 of defects detection portion with when reexamining the 2B1 of portion the driving condition of TFT being checked, must apply the signal of predetermined check pattern to tft array.Therefore, this inspection portion 2 has voltage application portion 2g, thus, tft array is applied the signal of predetermined check pattern.
In described structure, be sent to the substrate 100 in the chamber 4, can be under the state that for example is positioned on the platform (not shown), by first 2A of inspection portion rejected region is detected, revised and by the second inspection portion retouch is verified by 3 pairs of detected rejected regions of correction portion, therefore, can not need to transport substrate 100 or send into substrate 100 to chamber 4 again from chamber 4.
In addition, among the defect type confirmation unit 2A2, the position coordinates of the rejected region when carrying out optical observation as defect type to rejected region, can directly use coordinate data by the detected rejected region of the 2A1 of defects detection portion, therefore, can not need in this stage the host server 5 to the outside transmit data.
In addition, in the correction portion 3, the position coordinates of the rejected region when the defective of rejected region is revised and the type of defective, can directly use coordinate data and defect type data by the detected rejected region of first 2A of inspection portion, therefore, can not need in this stage the host server 5 to the outside transmit data.
Transmit this processing of data to host server 5, only carry out once after can finishing in each processing of first 2A of inspection portion, correction portion 3 and second 2B of inspection portion.
Fig. 2 is used for flow chart that the processing of inspecting substrate of the present invention and correcting device 1 action is described.
At first, will form the substrate 100 of array in the leading portion step 6, put into the chamber 4 interior (S1) of inspecting substrate and correcting device 1.By alignment function come with chamber 4 in the reference position carry out position alignment.This aligning comprises following operation: obtain the size of substrates or be formed on locations of pixels on the substrate or the substrate data (S2) of size etc. from host server 5, come position alignment (S3) is carried out in substrate 100 and the reference position of checking scanning system according to acquired substrate data.
After the aligning, real estate is scanned and obtains detection signal.The detection that this scanning can the potential state when tft array being applied the signal pattern of inspection be carried out is carried out.The detection of potential state, when for example using electron beam as the input probe, scanning that can be by this electron beam and the moving of platform (not shown) of supporting this substrate change the position that is radiated at the electron beam on the substrate and carry out.This substrate scanning can also be used the excitaton source (S4) of femtosecond laser 2b or semiconductor variable wavelength laser 2c etc. except can using described non-contact type electron beam 2a.
The detection signal that obtains by substrate scanning is resolved and the defective of substrate is assessed (S5), when having defective on the substrate, described defect type is classified (S6), utilize the optical viewing system of micro-CCD camera 2e etc. to come described defect type is confirmed (S7).
Defect type is confirmed (S8), and be judged as described defective can revise the time, use LASER Light Source 3a to wait and carry out defect correction, if short-circuit condition is then carried out cutting process, if off state then carries out (S9) such as film forming processing.
After defective revised, tft array is applied the signal pattern of inspection, retouch is contacted with contact-type microprobe 2f, the current potential of region of interest is detected, reexamine (S10) thus.
When being judged as to revise the time among the S8 and the reexamining after the end of S10, the data processing (S11) that these and the coordinate position data of revising relevant data, rejected region or defect type data etc. are carried out statistical disposition, data are sent to (S12) after the host server 5, transport substrate 100 (S13) from chamber 4.According to structure of the present invention, finished by second 2B of inspection portion and to have reexamined, therefore, need not just can enter next step as sending into substrate in order to check once more in the past.
Fig. 3 (a), Fig. 3 (b) are used for the figure that the processing of the operating time etc. with inspecting substrate of the present invention and correcting device and existing structure compares.The flow process of the processing in Fig. 3 (a) expression existing structure, the flow process of the processing of Fig. 3 (b) expression inspecting substrate of the present invention and correcting device.
In the existing structure shown in Fig. 3 (a), 3 inputs of needs steps are put into array apparatus, correcting device with substrate and are reexamined in the device, and in addition, 3 of needs transport step and come to transport substrate from each device.In addition, after each device drops into substrate,, need to aim at 3 times in order to carry out position alignment in the reference position to each device.
To this, in inspecting substrate of the present invention shown in Fig. 3 (b) and the correcting device 1, substrate is only put in the chamber, and therefore, dropping into step and transporting step all only has and get final product for 1 time.In addition, substrate is put into after each device, be used for the aligning that position alignment is carried out in the reference position of each device also only had get final product for 1 time, so can shorten working hours.
In addition, in existing structure, must between each device and host server, obtain substrate related data, and transmit the data that obtained by device, therefore amount to 3 times, on the contrary, inspecting substrate of the present invention and correcting device can only carry out 1 time respectively, so, can reduce the needed occupancy of data processing (the memory use amount during operation).
In addition, in the described example, what use during inspecting substrate is the excitaton source of non-contact type electron beam, femtosecond laser or semiconductor variable wavelength laser etc., but is not limited to these examples, also can use other inspection bodies.In addition,, also be not limited to use LASER Light Source, also can use other correction mechanisms about revising.
In addition, in reexamining process, be not limited to use the contact-type microprobe, also can use and utilize electromagnetic testing agency.
[utilizability on the industry]
The present invention not only goes for crystal liquid substrate or organic EL substrate, can also be applicable to partly and lead Structure base board.
Claims (7)
1, a kind of inspecting substrate and correcting device is characterized in that comprising:
Inspection portion carries out defect inspection to the substrate that is forming tft array, and
Correction portion is revised the defective array; And
Described inspection portion and described correction portion are carried out defect inspection and defect correction to substrate in same chamber.
2, inspecting substrate according to claim 1 and correcting device is characterized in that, described inspection portion comprises:
The first inspection portion is detected the rejected region in the presumptive area of substrate, and the pixel coordinate data of output rejected region, and the defect type of this rejected region is classified and exported the defect type data; And
The second inspection portion checks the driving condition of the tft array of the pixel unit of substrate, and the driving condition data of output tft array.
3, inspecting substrate according to claim 2 and correcting device is characterized in that, the described first inspection portion comprises:
Defects detection portion detects the rejected region of substrate by presumptive area irradiation electron beam or irradiation exciting light to substrate, and exports the pixel coordinate data of rejected region; And
The defect type confirmation unit, by the detected rejected region of described defects detection portion is carried out the classification that the defect type of rejected region is confirmed in optical observation, and output defect type data.
4, inspecting substrate according to claim 3 and correcting device is characterized in that:
The exciting light of the described first inspection portion is femtosecond laser or semiconductor variable wavelength laser.
5, inspecting substrate according to claim 2 and correcting device is characterized in that:
The described second inspection portion has the contact-type probe that contacts with the pixel of substrate and the current potential of this pixel is detected, and according to the pixel coordinate data through the position of described correction portion correction the contact-type probe is contacted with the pixel of substrate.
6, inspecting substrate according to claim 2 and correcting device is characterized in that:
Described correction portion has LASER Light Source, utilize laser that this LASER Light Source shines and according to detected pixel coordinate data of the described first inspection portion and confirmed defect type data, cut or partial film forming or carry out the two at rejected region.
7, a kind of substrate evaluation system is characterized in that:
Have claim 1 to described any inspecting substrate of claim 6 and correcting device,
At a plurality of substrates, the pixel coordinate data of the correction pixel of the pixel coordinate data of the rejected region of the described first inspection portion gained and defect type data, described correction portion and the correction result data of revising the content-data and the second inspection portion gained are carried out statistical disposition, and obtain the assessment data of the production line of substrate, and this assessment data is fed back to production line.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2006/315220 WO2008015738A1 (en) | 2006-08-01 | 2006-08-01 | Substrate inspection and repair device, and substrate evaluation system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101461063A true CN101461063A (en) | 2009-06-17 |
| CN101461063B CN101461063B (en) | 2011-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200680054826XA Expired - Fee Related CN101461063B (en) | 2006-08-01 | 2006-08-01 | substrate inspection and repair device, and substrate evaluation system |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2008015738A1 (en) |
| KR (1) | KR101051730B1 (en) |
| CN (1) | CN101461063B (en) |
| WO (1) | WO2008015738A1 (en) |
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| JPH07201946A (en) * | 1993-12-28 | 1995-08-04 | Hitachi Ltd | Manufacture of semiconductor device and apparatus for manufacture the same, testing of the same and testing apparatus |
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- 2006-08-01 WO PCT/JP2006/315220 patent/WO2008015738A1/en active Application Filing
- 2006-08-01 CN CN200680054826XA patent/CN101461063B/en not_active Expired - Fee Related
- 2006-08-01 JP JP2008527612A patent/JPWO2008015738A1/en active Pending
- 2006-08-01 KR KR1020087028131A patent/KR101051730B1/en not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20090006205A (en) | 2009-01-14 |
| JPWO2008015738A1 (en) | 2009-12-17 |
| CN101461063B (en) | 2011-12-28 |
| WO2008015738A1 (en) | 2008-02-07 |
| KR101051730B1 (en) | 2011-07-25 |
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