CN101451238B - 在腔体内壁形成保护膜的预沉积方法 - Google Patents
在腔体内壁形成保护膜的预沉积方法 Download PDFInfo
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- CN101451238B CN101451238B CN2007101716146A CN200710171614A CN101451238B CN 101451238 B CN101451238 B CN 101451238B CN 2007101716146 A CN2007101716146 A CN 2007101716146A CN 200710171614 A CN200710171614 A CN 200710171614A CN 101451238 B CN101451238 B CN 101451238B
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CN2007101716146A CN101451238B (zh) | 2007-11-30 | 2007-11-30 | 在腔体内壁形成保护膜的预沉积方法 |
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CN2007101716146A CN101451238B (zh) | 2007-11-30 | 2007-11-30 | 在腔体内壁形成保护膜的预沉积方法 |
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CN101451238A CN101451238A (zh) | 2009-06-10 |
CN101451238B true CN101451238B (zh) | 2010-08-25 |
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Families Citing this family (3)
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CN102903613B (zh) * | 2011-07-25 | 2016-05-18 | 中国科学院微电子研究所 | 消除接触孔工艺中桥接的方法 |
CN102586758B (zh) * | 2012-03-23 | 2013-12-18 | 上海先进半导体制造股份有限公司 | 高密度等离子机台的预沉积方法 |
CN107083538A (zh) * | 2017-04-27 | 2017-08-22 | 上海华虹宏力半导体制造有限公司 | Pecvd淀积非晶硅薄膜的方法 |
Citations (2)
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CN1776027A (zh) * | 2005-12-01 | 2006-05-24 | 苏州大学 | 类金刚石为涂层的生物材料及其制备方法 |
CN1901225A (zh) * | 2005-07-21 | 2007-01-24 | 国际商业机器公司 | 半导体器件及其制造方法 |
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CN1901225A (zh) * | 2005-07-21 | 2007-01-24 | 国际商业机器公司 | 半导体器件及其制造方法 |
CN1776027A (zh) * | 2005-12-01 | 2006-05-24 | 苏州大学 | 类金刚石为涂层的生物材料及其制备方法 |
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Effective date of registration: 20111121 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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