CN101436589A - Semiconductor module and image pickup apparatus - Google Patents
Semiconductor module and image pickup apparatus Download PDFInfo
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- CN101436589A CN101436589A CNA2008101753915A CN200810175391A CN101436589A CN 101436589 A CN101436589 A CN 101436589A CN A2008101753915 A CNA2008101753915 A CN A2008101753915A CN 200810175391 A CN200810175391 A CN 200810175391A CN 101436589 A CN101436589 A CN 101436589A
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
A semiconductor module including multiple semiconductor devices prevents a signal that flows through a bonding wire connected to one semiconductor device from acting as noise which affects the other semiconductor devices, thereby improving the operation reliability of the semiconductor module. A second semiconductor device layered on a first semiconductor device includes a current output electrode via which large current is output. The current output electrode is electrically connected to a substrate electrode provided to a first wiring layer via a bonding wire. The bonding wire is provided across the side E1 of the second semiconductor device. A bonding wire connected to the first semiconductor device is provided across a side of the first semiconductor device other than the side F1 that corresponds to the side E1 of the second semiconductor device, i.e., across the side F2, F3, or F4 of the first semiconductor device.
Description
Technical field
The present invention relates to semiconductor module and loaded the camera head of this semiconductor module.
Background technology
In recent years, be accompanied by miniaturization, the multifunction of electronic equipment, the further miniaturization of the semiconductor module that requirement is used, integrated on electronic equipment.In order to respond such requirement, developed the MCM (multi-chip module) that on substrate, loads a plurality of semiconductor chips.
As the formation of in MCM, loading semiconductor chip, known multistage storehouse (stack) structure that is laminated with a plurality of semiconductor chips.In the MCM of multistage stack structure, around each semiconductor chip, be provided with outer electrode, be electrically connected by bonding wire between the electrode pad (pad) on each outer electrode and the substrate.
Such MCM for example is assembled in the CCD camera, has given function alone to each semiconductor chip.For example, in semiconductor chip, be assembled into control circuit, in semiconductor chip, be assembled into circuit to the motor supplying electric current of driven CCD as driving element performance function as logic element performance function.
In the MCM that adopts the multistage stack structure, the signal that flows in the bonding wire of the semiconductor element of bringing into play function as driving element becomes the noise as the semiconductor element of logic element performance function, the reliable in action of bringing into play the semiconductor element of function as logic element has just lowered, and the possibility of the reliable in action decline of semiconductor module is arranged.
In addition, camera heads such as digital camera require miniaturization more, in the camera head that is mounted with the MCM that has adopted multistage stack structure in the past, the decline of the reliable in action of above-mentioned semiconductor element has just become obviously, will produce following problem, promptly cause the bad possibility of action of camera head.
Summary of the invention
The present invention carries out in view of aforesaid problem, a kind of technology that provides is provided, promptly in having the semiconductor module of a plurality of semiconductor elements, can be suppressed at the signal that flows in a side the bonding wire of semiconductor element becomes the noise of the opposing party's semiconductor element, can improve the reliable in action of semiconductor module.In addition, the objective of the invention is: a kind of technology that makes the reliable in action raising of the camera head of having assembled the semiconductor module with a plurality of semiconductor elements is provided.
Certain form of the present invention is a kind of semiconductor module, it is characterized in that, this semiconductor module has: circuit board, and its side's first type surface is provided with electrode of substrate; The 1st semiconductor element, it is loaded on the circuit board, and has and be used to import or the logical signal electrode of output logic signal; The 2nd semiconductor element, it is loaded on the 1st semiconductor element, and has the electric current output electrode that is used to export big electric current; The 1st bonding wire, it reaches with electrode logical signal and is electrically connected with its corresponding electrode of substrate; With the 2nd bonding wire, it reaches with electrode electric current output and is electrically connected with its corresponding electrode of substrate, from the main surface side of circuit board, the 1st bonding wire passes across the limit of the 1st not corresponding semiconductor element of the limit of the 2nd semiconductor element that passes across with the 2nd bonding wire.
According to this form, because the 1st bonding wire that is connected with electrode with the logical signal that is arranged at the 1st semiconductor element, be present in position, therefore can suppress on the 1st semiconductor element, to produce noise by the influence of big electric current mobile in the 2nd bonding wire away from the 2nd bonding wire that is connected with electrode with the electric current output that is arranged at the 2nd semiconductor element.Its result not only can improve the reliable in action of the 1st semiconductor element, and can improve the reliable in action of semiconductor module.
Electric current output electrode, also the limit of the 2nd semiconductor element that can pass across along the 2nd bonding wire is provided with.
The hand jitter compensation signal that the hand jitter compensation of the 1st semiconductor element output camera head is used, the big electric current that the output of the 2nd semiconductor element provides to the driver part that drives the camera lens of camera head according to hand jitter compensation signal.Under this situation, driver part also can be a voice coil motor (VCM).In addition, logical signal also can be provided with along the limit of the 1st not corresponding semiconductor element of the limit of the 2nd semiconductor element that passes across with the 2nd bonding wire with electrode.
Other forms of the present invention are a kind of camera heads, it is characterized in that, this camera head has the semiconductor module of above-mentioned any form.
Description of drawings
Fig. 1 is that expression has the block diagram that the circuit of the camera head of the relevant semiconductor module of execution mode constitutes.
Fig. 2 is the vertical view that the summary of the relevant semiconductor module of expression execution mode constitutes.
Fig. 3 is the cutaway view that the summary of the relevant semiconductor module of expression execution mode constitutes.
Fig. 4 be have the relevant semiconductor module of execution mode digital camera see through stereogram.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.In addition, in whole accompanying drawings, to the additional identical mark of identical inscape, and suitable in the following description detailed.
The semiconductor module that execution mode is relevant is applicable to the camera heads such as digital camera with hand shake compensation functionality.Fig. 1 is that expression has the block diagram that the circuit of the camera head of the relevant semiconductor module of execution mode constitutes.Digital camera has signal amplifying part 10 and hand jitter compensation portion 20.Signal amplifying part 10 is amplified back output jitter compensation in one's hands portion 20 with given magnification ratio to the signal of being imported.Hand jitter compensation portion 20, according to the position signalling of angular velocity signal of being imported and camera lens, the signal that will carry out the hand jitter compensation for the position of controls lens outputs to signal amplifying part 10.
Below, the circuit that is described more specifically digital camera constitutes.
Gyro sensor 50,2 axial angular speed of the XY of detection digital camera.The angular velocity signal of the simulation that obtains by gyro sensor 50 after being amplified by amplifying circuit 12, is exported to ADC (analog-digital converter) 22.ADC22, the angular velocity signal after will being amplified by amplifying circuit 12 converts the angular velocity signal of numeral to.Angular velocity signal from ADC22 output is exported to the equalizer 24 that circles round.
In the equalizer 24 that circles round, at first will input to HPF (high pass filter) 26 from the angular velocity signal of the numeral of ADC22 output.HPF26 remove in the angular velocity signal of gyro sensor 50 output, than the low frequency content of frequency content that produces because of the hand shake.In general, be 1～20Hz because hand is shaken caused frequency content, therefore, for example from angular velocity signal, remove the frequency content below the 0.7Hz.
Pan/inclination decision circuit 28 according to the angular velocity signal of HPF26 output, detects pan action, the tilting action of camera head.Make under the situation that camera head moves in mobile grade according to reference object, gyro sensor 50 outputs with should mobile corresponding angular velocity signal.But,, therefore the situation that does not need to compensate optical systems such as camera lens 60 is arranged because, be not that the hand shake causes based on the change of the angular velocity signal of pan action or tilting action.Pan/inclination decision circuit 28 is set to: do not exist with ... change based on the angular speed of pan action or tilting action, but in order to carry out the hand jitter compensation.Specifically, pan/inclination decision circuit 28 when angular velocity signal becomes set-point continuously in detecting during certain, is judged to be and carries out pan action or tilting action.In addition, will be called the pan action according to the action of dollying device in the horizontal direction such as mobile grade of the object of taking pictures, the action of Yi Donging in vertical direction is called tilting action.
LPF (low pass filter) 32 finishes the task of integrating circuit, and the angular velocity signal that gain adjustment circuit 30 is exported carries out integration, generates the angle signal of the amount of movement of expression camera head.For example, LPF32 by having used the Filtering Processing of digital filter, obtains angle signal, is the amount of movement of camera head.
(centering) treatment circuit 34 that centers, the angle signal to from LPF32 output deducts specified value.When hand jitter compensation in carrying out camera head is handled, continue to carry out compensation deals during in, the position of camera lens is left gradually from the reference position, and near the situation the boundary point of the movable range that reaches camera lens is arranged.At this moment, continue the hand jitter compensation and handle, camera lens can move to a certain side's direction, can not move to other direction but become.The treatment circuit that centers is provided with in order to prevent this from occurring, and by deducting specified value from angle signal, thereby can control near the mode of the boundary point of the movable range of camera lens being difficult to.
From the angle signal of treatment circuit 34 outputs that center, adjust to the scope of the signal of Hall element 70 by gain adjustment circuit 36.Angle signal by gain adjustment circuit 36 is adjusted is exported to Hall equalizer 40.
Be exported to Hall equalizer 40 from the position signalling of ADC22 output.In Hall equalizer 40, at first the position signalling from ADC22 output is transfused to add circuit 42.In addition, the angle signal that was undertaken adjusting by gain adjustment circuit 36 is imported in the add circuit 42.Add circuit 42 is with position signalling and the angle signal addition imported.Be exported to servo circuit 44 from the signal of add circuit 42 outputs.Servo circuit 44 according to the signal that outputs to servo circuit 44, generates the signal of the driving of control VCM80.The electric current of this signal (VCM drive current) in general is 200～300mA.In addition, in servo circuit 44, also can use the Filtering Processing of servo circuit digital filter.
From the VCM drive signal of servo circuit 44 output, convert analog signal to from digital signal by DAC (digital analog converter) 46.The VCM drive signal of simulation after amplifying circuit 16 amplifications, is exported to VCM80.VCM80 moves the X of camera lens 60 and the position of Y direction according to the VCM drive signal.
The action of the circuit of the camera head of the present embodiment when explanation does not here have hand when shake and the hand shake is arranged.
(action when not having the hand shake)
When not having the hand shake, because do not produce angular speed in camera head, the signal of equalizer 24 outputs of therefore circling round becomes " 0 ".It is consistent that the position of the camera lens 60 that is driven by VCM80 is configured to the center of the imaging apparatuss such as CCD that optical axis and camera head had (not have to illustrate) of camera lens 60, so position signalling of the simulation of Hall element 70 and amplifying circuit 14 generations, convert the position signalling of numeral of expression " 0 " to by ADC22 after, be output to Hall equalizer 40.Servo circuit 44 when the value of position signalling is " 0 ", is exported the signal of control VCM80 in the mode of the position of keeping current camera lens 60.
In addition, at the center of the position of camera lens 60 and imaging apparatus when inconsistent, the position signalling of the simulation that Hall element 70 and amplifying circuit 14 produces, convert the position signalling of numeral of the expression value different to " 0 " by ADC22 after, be exported to Hall equalizer 40.Servo circuit 44 is according to the value of the position signalling of the numeral of ADC22 output, and the mode that becomes " 0 " with the value of position signalling is controlled VCM80.
By carrying out such action repeatedly, thus the position of controls lens 60, so that the position of camera lens 60 is consistent with the center of imaging apparatus.
(action when the hand shake is arranged)
Because it is consistent that the position of the camera lens 60 that VCM80 drives is configured to the center of the imaging apparatus that its optical axis and camera head has, so position signalling of the simulation that Hall element 70 and amplifying circuit 14 produce, convert the position signalling of numeral of expression " 0 " to by ADC22 after, be exported to Hall equalizer 40.
On the other hand, because the hand shake causes camera head to move, so the LPF32 and the treatment circuit 34 that centers, according to using gyro sensor 50 detected angular velocity signals, the angle signal of the amount of movement of output expression camera head.
The signal of servo circuit 44 after according to the angle signal addition of the position signalling of the expression " 0 " of ADC22 output and the treatment circuit output that centers generates the drive signal of VCM.At this moment, no matter whether position signalling be " 0 " because with the angle signal addition that be " 0 ", so the compensating signal that servo circuit 44 generations are moved camera lens 60.
In addition, the hand jitter compensation of present embodiment, be not image with CCD in a single day read in memory just according to the so-called electronic type hand jitter compensation of the factor of relatively discharging the hand shake of next image, as mentioned above, but so that camera lens carries out camera lens move mode that optics moves or the optical profile type hand jitter compensations such as CCD move mode that CCD is moved.
Therefore, following effect is arranged: optical profile type hand jitter compensation can solve the problem that has produced when having adopted electronic type hand vibration reduction mechanism, promptly, the image quality of the significantly image of taking pictures in advance being pruned egative film and causing worsens and the restriction of CCD size and the problem that there is boundary in the compensation range that causes or shooting multiplying power, can not compensate the problem of vibration of the rest image of a scene of a scene in addition.Particularly, when taking out rest image from the image of high image quality video, optical profile type hand jitter compensation also is effective.
According to the compensating signal of servo circuit 44 output, VCM80 moves camera lens 60, so the imaging apparatus that camera head had can obtain the vibration that the adversary shakes the caused object of taking pictures and carried out the signal that suppresses.By so repeatedly control, just can realize the hand jitter compensation.
Fig. 2 is the vertical view that the summary of the relevant semiconductor module of expression execution mode constitutes.In addition, Fig. 3 is the cutaway view of the summary formation of the relevant semiconductor module of expression execution mode.In addition, in Fig. 2, omitted sealing resin 150 described later.
Circuit board 110 has the 1st wiring layer 114 and the 2nd wiring layer 116, wherein between the 1st wiring layer 114 and the 2nd wiring layer 116 across insulating resin layer 112.The 1st wiring layer 114 is to be electrically connected by the through hole 117 that connects insulating resin layer 112 with the 2nd wiring layer 116.The 2nd wiring layer 116 is connecting solder ball 160.
As the material that constitutes insulating resin layer 112, for example can illustration BT resin etc. the thermosetting resin of melamine derivative (melamine derivative), liquid crystal polymer, epoxy resin, PPE resin, polyimide resin, fluororesin, phenolic resin, polyamide bismaleimides (polyamidebismaleimide) etc.From the viewpoint of the thermal diffusivity that improves semiconductor module 100, wish that insulating resin layer 112 has high thermal conductivity.For this reason, insulating resin layer 112 preferably contains silver, bismuth, copper, aluminium, magnesium, tin, zinc and these alloy etc. and is used as the heat conductivity filler.
As the material that constitutes the 1st wiring layer 114 and the 2nd wiring layer 116, for example can enumerate copper.
On the first type surface S1 of circuit board 110, be mounted with the 1st semiconductor element 120 and the 3rd semiconductor element 140.Be mounted with the 2nd semiconductor element 130 in the mode that is laminated on the 1st semiconductor element 120.The 1st semiconductor element 120 is a logic element, is equivalent to hand jitter compensation portion 20 shown in Figure 1.In addition, the 2nd semiconductor element 130 is driving element or power component, is equivalent to signal amplifying part shown in Figure 1 10.The 1st semiconductor element the 120, the 2nd semiconductor element 130 and the 3rd semiconductor element 140 are sealed by sealing resin 150, and packed.Sealing resin 150 for example utilizes compression mod (transfer mold) method to form.
In the 1st semiconductor element 120, be provided be used to import or the logical signal of output logic signal with electrode 122.As the logical signal that is imported into the 1st semiconductor element 120, above-mentioned angular velocity signal, position signalling have been enumerated.The electric current of logical signal is typically 2mA.In addition, as logical signal, enumerated hand jitter compensation signal from 120 outputs of the 1st semiconductor element.Logical signal is with electrode 122, by the bonding wire 124 of metal wire etc., is electrically connected with electrode of substrate 118a on being arranged on the 1st wiring layer 114.
In the 2nd semiconductor element 130, be provided with the electric current output electrode 132 that is used to export big electric current.As big electric current, enumerated the electric current (200～300mA) that is used to drive VCM from 130 outputs of the 2nd semiconductor element.Electric current output is with electrode 132, by the bonding wire 134 of metal wire etc., is electrically connected with electrode of substrate 118b on being arranged on the 1st wiring layer 114.In addition, on the 2nd semiconductor element 130, use the electrode 132, also be provided with the chip electrode 136 that when carrying out the input and output of signal, uses with other semiconductor element except electric current output.Chip electrode 136 by the bonding wire 137 of metal wire etc., is electrically connected with substrate 118c on being arranged on the 1st wiring layer 114.In addition, the wiring by bonding wire 124,134,137 forms can be loaded into the 1st semiconductor element 120 on the circuit board 110, has after having loaded the 2nd semiconductor element 130 on the 1st semiconductor element 120 again and implements.
As shown in Figure 2, from the first type surface S1 side of circuit board 110, bonding wire 134 passes across the limit E1 of the 2nd semiconductor element 130.With the bonding wire 124 that the 1st semiconductor element 120 is connected, pass across the limit beyond the limit F1 with corresponding the 1st semiconductor element of limit E1 of the 2nd semiconductor element 130, promptly pass across limit F2, F3, the F4 of the 1st semiconductor element 120.The limit E1 setting of the 2nd semiconductor element 130 that electric current output passes across along bonding wire 134 with electrode 132.In addition, " limit " of the 1st semiconductor element 120 and the 2nd semiconductor element 130 also can be called " edge " or " end " on one side.
In addition, the limit E1 of the 2nd semiconductor element 130 stretches out above the limit F1 of the 1st semiconductor element 120.In other words, the limit E1 of the 2nd semiconductor element 130, outstanding from the limit F1 of the 1st semiconductor element 120, near the bottom of the limit E1 of the 2nd semiconductor element 130, produce the gap.In the present embodiment, electric current output is arranged in the zone that the 2nd semiconductor element 130 stretches out with respect to the limit F1 of the 1st semiconductor element 120 with electrode 132.In addition, in the semiconductor module 100 of present embodiment, at one of the limit F1 of the 1st semiconductor element 120 electrode pad is not set, when being loaded into the 2nd semiconductor element 130 on the 1st semiconductor element 120, can cause obstacle the side of the limit F1 of the 1st semiconductor element 120.For this reason, because the 2nd semiconductor element 130 is not produced restriction in the configuration of the limit of the 1st semiconductor element 120 F1 side, so the limit E1 of the 2nd semiconductor element 130 just can stretch out above the limit F1 of the 1st semiconductor element 120.
The 3rd semiconductor element 140 is memory components such as EEPROM.In the 3rd semiconductor element 140, for example maintain the required data of hand jitter compensation.The 3rd semiconductor element 140 is set to: with the configuration of the 2nd semiconductor element 130 electric current output closely connect with the limit of the circuit board 110 of the opposite side of limit E1 of electrode 132 and bonding wire 134.The 3rd semiconductor element 140 more preferably has been arranged on the formation of the 2nd semiconductor element 130 near the bight of electric current output with the circuit board 110 of the opposite side in limit of electrode 132 and bonding wire 134.
In addition, the limit E1 of the 2nd semiconductor element 130 stretches out than the limit F1 of the 1st semiconductor element 120, and therefore the position of the bonding wire 134 that is connected with the 2nd semiconductor element 130 becomes the position away from the 1st semiconductor element 120.For this reason, can suppress in the bonding wire 134 the influence of the big electric current that flows more to the 1st semiconductor element 120.
In addition, the 2nd semiconductor element 130, be stacked on the semiconductor element 120 because above the limit F1 of the 1st semiconductor element 120, stretch out the state layer of some with its limit E1, so the position is set can not be restricted of the 2nd semiconductor element 130 by the setting area of the 1st semiconductor element 120.For this reason, can easily carry out the design of the multistage stack structure in the semiconductor module 100.
In addition, use on the position of electrode 132 and bonding wire 134, therefore can suppress to produce noise on the 3rd semiconductor element 140 because the 3rd semiconductor element 140 is set at away from the electric current output of the 2nd semiconductor element 130.Its result not only can improve the reliable in action of the 3rd semiconductor element 140, and can improve the reliable in action of semiconductor module 100.In addition, in the above-described embodiment, replace circuit board 11, be arranged at the 1st wiring layer the 114, the 2nd wiring layer 116 and the solder ball 160 on its surface, and use the lead frame (1ead frame) that forms by metal also can obtain identical effect.
Fig. 4 be have the relevant semiconductor module of above-mentioned execution mode digital camera see through stereogram.Digital camera has: gyro sensor 50, camera lens 60, Hall element 70, VCM80 and semiconductor module 100.Semiconductor module 100 as Fig. 2 and shown in Figure 3, has the stacked structure of the 2nd semiconductor element 130 on the 1st semiconductor element 120.In addition, in semiconductor module shown in Figure 4 100, simplify and also suitably omitted the 1st semiconductor element 120 and the 2nd semiconductor element 130 formation in addition.
In view of the above, by the semiconductor module 100 that has used the 1st semiconductor 120 and the 2nd semiconductor 130 stacked, just can under the situation that can not cause reliable in action decline, realize the further miniaturization of digital camera.
The present invention is not limited to above-mentioned execution mode, can increase variations such as various design alterations according to those skilled in the art's knowledge, increases the execution mode that changes like this and is also contained in the scope of the present invention.
In this application, camera head is not limited to above-mentioned digital camera, can be video camera also, be loaded in camera on the mobile phone, monitor camera etc., can obtain the effect identical with digital camera.
Claims (15)
1. semiconductor module, it has:
Circuit board, it is provided with electrode of substrate on a side first type surface;
The 1st semiconductor element, it is loaded on the described circuit board, has to be used to import or the logical signal electrode of output logic signal;
The 2nd semiconductor element, it is loaded on described the 1st semiconductor element, has the electric current output electrode that is used to export big electric current;
The 1st bonding wire, it reaches with electrode described logical signal and is electrically connected with its corresponding described electrode of substrate; With
The 2nd bonding wire, it reaches with electrode described electric current output and is electrically connected with its corresponding described electrode of substrate,
From the described main surface side of described circuit board, described the 1st bonding wire passes across the limit of not corresponding described the 1st semiconductor element in the limit of described the 2nd semiconductor element that passes across with described the 2nd bonding wire.
2. semiconductor module according to claim 1 is characterized in that,
The limit of described the 2nd semiconductor element that passes across along described the 2nd bonding wire is provided with described electric current output electrode.
3. semiconductor module according to claim 1 is characterized in that,
The hand jitter compensation signal that the hand jitter compensation of described the 1st semiconductor element output camera head is used,
The big electric current that described the 2nd semiconductor element output provides to driver part, wherein this driver part drives the camera lens of described camera head according to described hand jitter compensation signal.
4. semiconductor module according to claim 2 is characterized in that,
The hand jitter compensation signal that the hand jitter compensation of described the 1st semiconductor element output camera head is used,
The big electric current that described the 2nd semiconductor element output provides to driver part, wherein this driver part drives the camera lens of described camera head according to described hand jitter compensation signal.
5. semiconductor module according to claim 3 is characterized in that,
Described driver part is a voice coil motor.
6. semiconductor module according to claim 4 is characterized in that,
Described driver part is a voice coil motor.
7. semiconductor module according to claim 1 is characterized in that,
Limit along not corresponding described the 1st semiconductor element in the limit of described the 2nd semiconductor element that passes across with described the 2nd bonding wire is provided with described logical signal electrode.
8. semiconductor module according to claim 2 is characterized in that,
Limit along not corresponding described the 1st semiconductor element in the limit of described the 2nd semiconductor element that passes across with described the 2nd bonding wire is provided with described logical signal electrode.
9. semiconductor module according to claim 3 is characterized in that,
Limit along not corresponding described the 1st semiconductor element in the limit of described the 2nd semiconductor element that passes across with described the 2nd bonding wire is provided with described logical signal electrode.
10. semiconductor module according to claim 5 is characterized in that,
Limit along not corresponding described the 1st semiconductor element in the limit of described the 2nd semiconductor element that passes across with described the 2nd bonding wire is provided with described logical signal electrode.
11. a camera head wherein has the described semiconductor module of claim 1.
12. a camera head wherein has the described semiconductor module of claim 2.
13. a camera head wherein has the described semiconductor module of claim 3.
14. a camera head wherein has the described semiconductor module of claim 5.
15. a camera head wherein has the described semiconductor module of claim 7.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007296146 | 2007-11-14 | ||
| JP2007296146 | 2007-11-14 | ||
| JP2007-296146 | 2007-11-14 | ||
| JP2008281950 | 2008-10-31 | ||
| JP2008281950A JP5404000B2 (en) | 2007-11-14 | 2008-10-31 | Semiconductor module and imaging device |
| JP2008-281950 | 2008-10-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101436589A true CN101436589A (en) | 2009-05-20 |
| CN101436589B CN101436589B (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101753915A Expired - Fee Related CN101436589B (en) | 2007-11-14 | 2008-11-12 | Semiconductor module and image pickup apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5404000B2 (en) |
| CN (1) | CN101436589B (en) |
| TW (1) | TWI442544B (en) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000081646A (en) * | 1998-06-26 | 2000-03-21 | Ricoh Co Ltd | Camera with camera-shake correction function |
| JP2002057270A (en) * | 2000-08-08 | 2002-02-22 | Sharp Corp | Stacked chip semiconductor device |
| JP2004158536A (en) * | 2002-11-05 | 2004-06-03 | Fujitsu Ltd | Semiconductor device and method for manufacturing the same |
| JP4580730B2 (en) * | 2003-11-28 | 2010-11-17 | ルネサスエレクトロニクス株式会社 | Offset junction type multi-chip semiconductor device |
| JP4103796B2 (en) * | 2003-12-25 | 2008-06-18 | 沖電気工業株式会社 | Semiconductor chip package and multi-chip package |
| JP4509052B2 (en) * | 2005-03-29 | 2010-07-21 | 三洋電機株式会社 | Circuit equipment |
| JP4748648B2 (en) * | 2005-03-31 | 2011-08-17 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| JP4756932B2 (en) * | 2005-06-27 | 2011-08-24 | キヤノン株式会社 | Imaging device and interchangeable lens |
| KR100665217B1 (en) * | 2005-07-05 | 2007-01-09 | 삼성전기주식회사 | A semiconductor multi-chip package |
-
2008
- 2008-10-31 JP JP2008281950A patent/JP5404000B2/en not_active Expired - Fee Related
- 2008-11-11 TW TW097143468A patent/TWI442544B/en not_active IP Right Cessation
- 2008-11-12 CN CN2008101753915A patent/CN101436589B/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2009141330A (en) | 2009-06-25 |
| TW200931635A (en) | 2009-07-16 |
| CN101436589B (en) | 2012-05-30 |
| TWI442544B (en) | 2014-06-21 |
| JP5404000B2 (en) | 2014-01-29 |
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