CN101436565A - Method for preparing shallow plow groove isolation - Google Patents
Method for preparing shallow plow groove isolation Download PDFInfo
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- CN101436565A CN101436565A CNA2007100942243A CN200710094224A CN101436565A CN 101436565 A CN101436565 A CN 101436565A CN A2007100942243 A CNA2007100942243 A CN A2007100942243A CN 200710094224 A CN200710094224 A CN 200710094224A CN 101436565 A CN101436565 A CN 101436565A
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Abstract
The invention discloses a method for preparing a shallow groove isolator, which is used for preparing a semiconductor device with a size of 0.15um or below, and increases a step of using large inclined-angle injection of non-crystalline ions to make silicon atoms at the top angle of a groove fully non-crystallized before thermally growing a pad oxide layer in the process flow for preparing the prior shallow groove isolator. According to the characteristic that oxidation rate of amorphous silicon prepared by the method is quicker than that of crystalline silicon, the silicon is non-crystallized and then thermally oxidized to form the appearance of a smooth silicon interface of a groove top angle.
Description
Technical field
The present invention relates to a kind of shallow trench isolation from the preparation method, relate in particular to a kind of the shallow trench isolation that is used for 0.15um and following technology from the preparation method.
Background technology
Shallow trench isolation technology (Shallow Trench Isolation) be a kind of in very lagre scale integrated circuit (VLSIC) widely used device separation.Because the less relatively advantage of the tool area occupied of isolation structure of STI prepared own becomes the main flow device isolation structure that advanced process adopts.The principle of sti structure preparation is the etched open surface of silicon of part, uses CVD (CVD (Chemical Vapor Deposition) method) method SiO then
2Insert in the groove that is excavated.General preparation flow is at present: (1) is the grow liners oxide layer on substrate, then the deposit hard mask layer; (2) photoresist coating and exposure imaging; (3) hard mask layer etching and removal photoresist; (4) dry etching forms groove on substrate; (5) cushion oxide layer of corner, wet etching groove top; (6) in the inboard heat growth of groove bed course oxide layer; (7) HDP oxide layer filling groove; (8) cmp and hard mask layer are removed.Like this, just formed the isolated area of oxide layer (oxide) at the non-active area of silicon chip.This shallow trench (STI) processing procedure is commonly referred to hard mask shallow ditch groove separation process.
At present, in 0.15 micron and following semiconductor production processing procedure, all adopted this technology usually.But this technology has a shortcoming, promptly all make the pattern of corner, shallow trench top become very sharp-pointed usually, as seen shown in Fig. 1 broken circle, be unfavorable for the control of device grids oxide layer attenuate effect (Gate oxide thinning effect) and narrow-channel effect and cause the leakage current (Inverse narrow-width channel effect) of device.
Summary of the invention
The technical problem to be solved in the present invention provide a kind of shallow trench isolation from the preparation method, the shallow trench isolation that adopts the preparation of this method is from can effectively avoiding in the fleet plough groove isolation structure corner, top silicon interface too sharp-pointed.
For solving the problems of the technologies described above, shallow trench isolation of the present invention from the preparation method, be used for the preparation of 0.15um and following size semiconductor device, comprise the steps:
(1) deposit cushion oxide layer and hard mask layer on the silicon substrate;
(2) photoresist coating and lithographic definition shallow trench zone;
(3) hard mask layer etching and removal photoresist;
(4) dry etching forms shallow trench on substrate;
(5) cushion oxide layer of corner, wet etching shallow trench top;
(6) ion injects the silicon substrate on shallow trench top, makes silicon atom wherein decrystallized;
(7) heat growth bed course oxide layer in shallow trench;
(8) fill shallow trench with HDPCVD technology silicon oxide deposition;
(9) CMP grinds and the hard mask layer removal.
Shallow trench isolation of the present invention from the preparation method, utilize oxidation rate this characteristic faster of amorphous silicon than the oxidation rate of crystalline silicon, by at traditional shallow trench isolation before the heat of preparation technology's flow process growth bed course oxide layer, utilizing decrystallized ion high inclination-angle to inject makes the silicon atom of shallow trench drift angle fully decrystallized, and then in ensuing heat growth oxidation (Liner oxidation) process, the silicon of the oxidation consumption of shallow trench drift angle is more than the silicon that sidewall oxidation consumes, finally obtain slick and sly shallow trench drift angle silicon interface pattern, avoid the element leakage that sharply causes because of drift angle.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is the shallow ditch groove structure schematic diagram of prior art for preparing;
Fig. 2 is preparation method's of the present invention flow chart;
Fig. 3 is the cross section structure schematic diagram after the enforcement step of the present invention (2);
Fig. 4 is the cross section structure schematic diagram after the enforcement step of the present invention (3);
Fig. 5 is the cross section structure schematic diagram after the enforcement step of the present invention (4);
Fig. 6 is the cross section structure schematic diagram after the enforcement step of the present invention (5);
Fig. 7 is the cross section structure schematic diagram after the enforcement step of the present invention (6);
Fig. 8 is the cross section structure schematic diagram after the enforcement step of the present invention (7);
Fig. 9 is the cross section structure schematic diagram after the enforcement step of the present invention (9);
Embodiment
Shallow trench isolation of the present invention from the preparation method, be used for 0.15um and following dimension process.In conjunction with Fig. 2 technological process of the present invention is described:
(1) deposit cushion oxide layer and hard mask layer on the substrate.First deposit one cushion oxide layer on silicon substrate, after deposit hard mask layer thereon, common hard mask material layer is a silicon nitride, is used for the silicon substrate at etching process protection active area.
(2) photoresist coating and lithographic definition shallow trench zone (see figure 3).Be used in the photoetching process in the 0.15um technology, for the requirement of satisfying the photoetching resolution that less characteristic size brings and the depth of field (DOF) harsh especially, generally require photoresist thinner, the photoresist thickness that uses in photoresist thickness among the preparation method of the present invention and the normal 0.15um technology is similar.
(3) hard mask layer that exposes after the etching exposure, cushion oxide layer is to surface of silicon, and photoresist is removed in the back.
(4) dry etching silicon substrate forms shallow trench.
(5) cushion oxide layer of corner, wet etching shallow trench top.This step can make corner, groove top become slick and sly.
(6) ion injects the silicon substrate of shallow trench drift angle, makes silicon atom wherein decrystallized.Can adopt the decrystallized ion of high inclination-angle to inject, make the silicon atom of shallow trench drift angle fully decrystallized.Inject ion at this and can anyly can make the decrystallized ion of silicon atom, for example Si ion or germanium ion.The ion surface density of injecting is: 10
14~10
16Atom/square centimeter, the injection energy of silicon ion can be made as: 10-50kev, the injection energy of germanium ion can be made as: 30-80kev.In concrete enforcement, the inclination angle a that ion injects can be controlled between 30 degree~60 degree, guarantee to be infused in the shallow trench top corner regions, make amorphized siliconization.
(7) in the inboard heat growth of shallow trench bed course oxide layer.Because the oxidation rate of amorphous silicon is greater than the oxidation rate of crystalline silicon, when this goes on foot thermal oxidation, the silicon atom of the consumption of non-crystallization region is faster than the silicon atom that crystalline region consumes, the silicon of Gu Dingjiaochu and the interface of silica are more level and smooth, finally obtain slick and sly drift angle silicon interface pattern, avoid the element leakage that sharply causes because of drift angle.
(8) fill shallow trench with HDPCVD technology silicon oxide deposition.
(9) be that chemico-mechanical polishing (CMP) grinding makes substrate surface smooth at last, and remove hard mask layer.
Claims (6)
1, a kind of shallow trench isolation from the preparation method, be used for 0.15um and following size semiconductor device the preparation, it is characterized in that this method comprises the steps:
(1) deposit cushion oxide layer and hard mask layer on the silicon substrate;
(2) photoresist coating and lithographic definition shallow trench zone;
(3) hard mask layer etching and removal photoresist;
(4) dry etching forms shallow trench on substrate;
(5) cushion oxide layer at wet etching shallow trench drift angle place;
(6) ion injects the silicon substrate of shallow trench drift angle, makes silicon atom wherein decrystallized;
(7) heat growth bed course oxide layer in shallow trench;
(8) fill shallow trench with HDPCVD technology silicon oxide deposition;
(9) CMP grinds, and hard mask layer and cushion oxide layer are removed.
2, according to the described preparation method of claim 1, it is characterized in that: it is 30~60 degree that described step (6) intermediate ion injects the inclination angle.
3, according to claim 1 or 2 described preparation methods, it is characterized in that: the ion dose surface density of injecting in the described step (6) is 10
14~10
16Atom/square centimeter.
4, according to the described preparation method of claim 3, it is characterized in that: the ion that injects in the described step (6) is silicon ion or germanium ion.
5, according to the described preparation method of claim 4, it is characterized in that: the injection energy of described silicon ion is: 10-50kev.
6, according to the described preparation method of claim 4, it is characterized in that: the injection energy of described germanium ion is: 30-80kev.
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CNA2007100942243A CN101436565A (en) | 2007-11-13 | 2007-11-13 | Method for preparing shallow plow groove isolation |
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CNA2007100942243A CN101436565A (en) | 2007-11-13 | 2007-11-13 | Method for preparing shallow plow groove isolation |
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Cited By (12)
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CN102412182A (en) * | 2010-09-19 | 2012-04-11 | 中芯国际集成电路制造(上海)有限公司 | Formation method of shallow trench isolation structure |
CN102543827A (en) * | 2010-12-08 | 2012-07-04 | 南亚科技股份有限公司 | Method for fabricating trench isolation structure |
CN102569160A (en) * | 2010-12-21 | 2012-07-11 | 无锡华润上华半导体有限公司 | Method for manufacturing semiconductor device |
CN102569161A (en) * | 2010-12-22 | 2012-07-11 | 无锡华润上华半导体有限公司 | Semiconductor device manufacturing method |
CN102117761B (en) * | 2010-01-05 | 2013-07-24 | 上海华虹Nec电子有限公司 | Wet process method for improving chamfer smoothness on top of shallow trench isolation |
CN104658902A (en) * | 2015-01-28 | 2015-05-27 | 株洲南车时代电气股份有限公司 | Trench gate etching method |
CN105390496A (en) * | 2014-09-05 | 2016-03-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method therefor, and electronic device |
CN109216173A (en) * | 2017-07-03 | 2019-01-15 | 无锡华润上华科技有限公司 | The gate structure and its manufacturing method of semiconductor devices |
CN109411404A (en) * | 2018-10-31 | 2019-03-01 | 武汉新芯集成电路制造有限公司 | Fleet plough groove isolation structure and its manufacturing method and semiconductor devices |
WO2020124662A1 (en) * | 2018-12-20 | 2020-06-25 | 中国电子科技集团公司第十三研究所 | Method for fabricating resonator |
CN113299767A (en) * | 2021-05-21 | 2021-08-24 | 江苏东海半导体科技有限公司 | Groove type Schottky device and manufacturing method thereof |
CN114361010A (en) * | 2022-03-18 | 2022-04-15 | 广州粤芯半导体技术有限公司 | Method for manufacturing semiconductor device |
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2007
- 2007-11-13 CN CNA2007100942243A patent/CN101436565A/en active Pending
Cited By (20)
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CN102117761B (en) * | 2010-01-05 | 2013-07-24 | 上海华虹Nec电子有限公司 | Wet process method for improving chamfer smoothness on top of shallow trench isolation |
CN102412182B (en) * | 2010-09-19 | 2015-09-02 | 中芯国际集成电路制造(上海)有限公司 | Formation method of shallow trench isolation structure |
CN102412182A (en) * | 2010-09-19 | 2012-04-11 | 中芯国际集成电路制造(上海)有限公司 | Formation method of shallow trench isolation structure |
CN102543827B (en) * | 2010-12-08 | 2015-07-01 | 南亚科技股份有限公司 | Method for fabricating trench isolation structure |
CN102543827A (en) * | 2010-12-08 | 2012-07-04 | 南亚科技股份有限公司 | Method for fabricating trench isolation structure |
US8921183B2 (en) | 2010-12-08 | 2014-12-30 | Nanya Technology Corporation | Method for fabricating trench isolation structure |
CN102569160A (en) * | 2010-12-21 | 2012-07-11 | 无锡华润上华半导体有限公司 | Method for manufacturing semiconductor device |
CN102569160B (en) * | 2010-12-21 | 2014-12-31 | 无锡华润上华半导体有限公司 | Method for manufacturing semiconductor device |
CN102569161B (en) * | 2010-12-22 | 2014-06-04 | 无锡华润上华半导体有限公司 | Semiconductor device manufacturing method |
CN102569161A (en) * | 2010-12-22 | 2012-07-11 | 无锡华润上华半导体有限公司 | Semiconductor device manufacturing method |
CN105390496A (en) * | 2014-09-05 | 2016-03-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method therefor, and electronic device |
CN104658902A (en) * | 2015-01-28 | 2015-05-27 | 株洲南车时代电气股份有限公司 | Trench gate etching method |
CN104658902B (en) * | 2015-01-28 | 2018-05-08 | 株洲南车时代电气股份有限公司 | Trench gate engraving method |
CN109216173A (en) * | 2017-07-03 | 2019-01-15 | 无锡华润上华科技有限公司 | The gate structure and its manufacturing method of semiconductor devices |
CN109216173B (en) * | 2017-07-03 | 2021-01-08 | 无锡华润上华科技有限公司 | Gate structure of semiconductor device and manufacturing method thereof |
CN109411404A (en) * | 2018-10-31 | 2019-03-01 | 武汉新芯集成电路制造有限公司 | Fleet plough groove isolation structure and its manufacturing method and semiconductor devices |
WO2020124662A1 (en) * | 2018-12-20 | 2020-06-25 | 中国电子科技集团公司第十三研究所 | Method for fabricating resonator |
US11984864B2 (en) | 2018-12-20 | 2024-05-14 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Method for manufacturing resonator |
CN113299767A (en) * | 2021-05-21 | 2021-08-24 | 江苏东海半导体科技有限公司 | Groove type Schottky device and manufacturing method thereof |
CN114361010A (en) * | 2022-03-18 | 2022-04-15 | 广州粤芯半导体技术有限公司 | Method for manufacturing semiconductor device |
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Open date: 20090520 |