CN101425488B - Novel liquid cooling heat radiator for semiconductor device - Google Patents
Novel liquid cooling heat radiator for semiconductor device Download PDFInfo
- Publication number
- CN101425488B CN101425488B CN2007101566064A CN200710156606A CN101425488B CN 101425488 B CN101425488 B CN 101425488B CN 2007101566064 A CN2007101566064 A CN 2007101566064A CN 200710156606 A CN200710156606 A CN 200710156606A CN 101425488 B CN101425488 B CN 101425488B
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- China
- Prior art keywords
- radiator
- semiconductor device
- box body
- fin
- liquid cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007788 liquid Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 title claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 235000010210 aluminium Nutrition 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Abstract
The invention relates to a novel liquid cooling radiator for a semiconductor device. The radiator comprises a radiator box body. A radiating fin group formed by a plurality of radiating fins is mounted in an inner cavity on the box body; each radiating fin is a U-shaped plate; a plurality of slotted holes distributed uniformly are punched on the U-shaped plate; and an opening is respectively punched in the position where both ends of the plate is adjacent to the slotted holes. The radiator is formed by alternately stacking the radiating fins in a positive-to-negative manner, so that liquid carries out up and down diffluence continuously at the highest speed in the step-by-step process of the liquid; the liquid flows uniformly, and the full bump contact and the fixed volume flow depend on the radiating effect, thereby the radiating power density is greatly improved. The invention is used for the radiation of the semiconductor device.
Description
Technical field
The present invention relates to a kind of radiator, be specifically related to a kind of novel liquid cooling heat radiator for semiconductor device that is used for field of power electronics to the semiconductor device cooling.
Background technology
Along with Development of Power Electronic Technology is controlled in automation, power industry, electric automobile, the extensive use of aspects such as railway, urban track traffic and LED illumination.The difficulty of technology rises to high power density, also improve as requirement with the matching used radiator of power semiconductor device thereupon, and the internal structure design relation of semiconductor device by using radiator arrives high power density, and the liquid flow track has directly determined the radiating effect of radiator.Present stage, the structure of water-filled radiator had coiled, spiral groove type etc., flow and to flow according to a fixed-direction for above-mentioned structured liquids, the area of dissipation of current is smaller, and water velocity is also slow, thereby cause the heat radiation of radiator slow, the heat radiation power density of radiator is not high, and it is bad just to dispel the heat.
In order to overcome above-mentioned defective, the object of the present invention is to provide that liquid can flow simultaneously at different directions in a kind of radiator, the liquid area of dissipation increases, and accelerates water velocity, the novel electric power liquid cooling heat radiator for semiconductor device that the radiator heat-dissipation effect can be greatly enhanced.
The present invention is in order to realize above-mentioned purpose, and the technical scheme of taking is
A kind of novel liquid cooling heat radiator for semiconductor device, its composition comprises the radiator box body, inner chamber on the described box body is equipped with a groups of fins of being made up of several cooling fins, described fin is " U " template, described " U " template upper punch is pressed with several equally distributed slotted holes, and the both sides of plate and slotted hole adjacent punching press respectively have opening.
The fin of above-mentioned novel liquid cooling heat radiator for semiconductor device, described slotted hole are the hole with gradient; Described fin adopts a positive reciprocal cross to form groups of fins for the mode that stacks, and the material of described fin is an aluminium.
The present invention can bring following advantage
Novel liquid cooling heat radiator for semiconductor device of the present invention, inner chamber on its box body is equipped with a groups of fins of being made up of several fin that have slotted hole, and fin adopts a positive reciprocal cross for stacking together, because fin adopts positive and negative alternate to stack, and slotted hole has gradient, can form one group of diamond hole after stacking like this, liquid in the radiator can three directions flow in the slotted hole of fin and in the diamond hole, accelerated flow stream velocity, fluid flow is also increased accordingly, and liquid stream can distribute equably, and the table top heat also can be come out equably; The unit amount of the wide three of plate between the thickness of described fin, wide, adjacent two slotted holes in the hole of slotted hole carries out the technology proportioning, and the heat radiation power density of radiator is improved greatly.
Description of drawings
Fig. 1 is the structural representation of novel liquid cooling heat radiator for semiconductor device of the present invention.
Fig. 2 is the heat radiating fin structure schematic diagram.
Among the figure: 1 expression " U " template; 2 expression slotted holes; 3 expression openings, 4 expression radiator box bodys; 5 expression groups of fins.
Embodiment
Below by embodiment, and in conjunction with the accompanying drawings 1, technical scheme of the present invention is described in further detail.
A kind of novel liquid cooling heat radiator for semiconductor device, its composition comprises the radiator box body, inner chamber on the described box body is equipped with a fin by several aluminums and adopts a positive reciprocal cross for stack the groups of fins that constitutes together, first fin and second fin left-right symmetric when stacking in the groups of fins, first fin is identical with the 3rd fin, the 4th fin and the 3rd fin left-right symmetric stack into groups of fins by that analogy; The opening that the opening of fin stacks composition on the described groups of fins is the water inlet and the delivery port of radiator.
Such one a positive reciprocal cross is for the radiator that stacks formation, the slotted hole intersection of adjacent fin constitutes the slotted hole that several holes adds fin itself, make liquid in upper body in step by step the process, liquid constantly carries out shunting the most up and down, liquid flow is even and sufficient large tracts of land contacts and fixed volume flow size has determined radiating effect, finish heat radiation by flowing fast of liquid different directions, flow out from outlet at last.
The manufacture craft of described radiator can be dual mode, a kind of get two offer respectively with the fin profile phase with the box body in chamber, then respectively in two chambeies with fin by a positive reciprocal cross for stacking wherein, at last two box bodys are welded together with argon arc welding.
Another kind of mode, get one offer with the fin profile phase with the box body in chamber, with fin by a positive reciprocal cross for stacking wherein, on box body, add a cover a sealing plate at last and it welded with vacuum welding.
At last, should be pointed out that above embodiment only is the more representational example of the present invention.Obviously, technical scheme of the present invention is not limited to the foregoing description, and many distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from content disclosed by the invention all should be thought protection scope of the present invention.
Claims (2)
1. novel liquid cooling heat radiator for semiconductor device, its composition comprises radiator box body (5), it is characterized in that: the inner chamber on the described box body is equipped with a groups of fins of being made up of several cooling fins (4), described fin is " U " template (1), described " U " template upper punch is pressed with several equally distributed slotted holes (2), and the both sides of plate and slotted hole adjacent punching press respectively have opening (3); The hole of the slotted hole of described fin (2) for having gradient; Described fin adopts a positive reciprocal cross to form groups of fins (4) for the mode that stacks.
2. novel liquid cooling heat radiator for semiconductor device according to claim 1 is characterized in that: the material of described fin (1) is an aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101566064A CN101425488B (en) | 2007-10-31 | 2007-10-31 | Novel liquid cooling heat radiator for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101566064A CN101425488B (en) | 2007-10-31 | 2007-10-31 | Novel liquid cooling heat radiator for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101425488A CN101425488A (en) | 2009-05-06 |
| CN101425488B true CN101425488B (en) | 2010-06-09 |
Family
ID=40615980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101566064A Active CN101425488B (en) | 2007-10-31 | 2007-10-31 | Novel liquid cooling heat radiator for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101425488B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103747654A (en) * | 2013-12-24 | 2014-04-23 | 周细文 | Water cooling plate for heat dissipation of high-power electrical heating element |
| CN103745961B (en) * | 2014-01-25 | 2016-09-21 | 清华大学 | Use the heat abstractor of Rhizoma Nelumbinis shape porous material microchannel module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5983997A (en) * | 1996-10-17 | 1999-11-16 | Brazonics, Inc. | Cold plate having uniform pressure drop and uniform flow rate |
| CN2679850Y (en) * | 2004-02-25 | 2005-02-16 | 福华电子股份有限公司 | Heat collector runner structure of liquid cooling radiator |
| CN2702444Y (en) * | 2004-05-28 | 2005-05-25 | 林世仁 | Water-cooling type heat sink |
-
2007
- 2007-10-31 CN CN2007101566064A patent/CN101425488B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5983997A (en) * | 1996-10-17 | 1999-11-16 | Brazonics, Inc. | Cold plate having uniform pressure drop and uniform flow rate |
| CN2679850Y (en) * | 2004-02-25 | 2005-02-16 | 福华电子股份有限公司 | Heat collector runner structure of liquid cooling radiator |
| CN2702444Y (en) * | 2004-05-28 | 2005-05-25 | 林世仁 | Water-cooling type heat sink |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101425488A (en) | 2009-05-06 |
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Owner name: HANGZHOU XENBO ELECTRIC CO., LTD. Free format text: FORMER OWNER: XIA BOTAO Effective date: 20120117 |
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Free format text: CORRECT: ADDRESS; FROM: 310000 HANGZHOU, ZHEJIANG PROVINCE TO: 311258 HANGZHOU, ZHEJIANG PROVINCE |
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Effective date of registration: 20120117 Address after: 311258 Hangzhou City, Zhejiang Province, Xiaoshan District Wen Yan Town, Sanjiang Village Patentee after: Hangzhou Xiangbo Electric Co., Ltd. Address before: 310000, Mount Huangshan village, Hangzhou Town, Xiaoshan District, Zhejiang Patentee before: Xia Botao |
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Address after: Xiaoshan District of Hangzhou City, Zhejiang province 311220 Xiaoshan Economic Development Zone Huarui Center 1 building 23 layer Patentee after: Hangzhou Bo Bo heat transfer Polytron Technologies Inc Address before: 311258 Hangzhou City, Zhejiang Province, Xiaoshan District Wen Yan Town, Sanjiang Village Patentee before: Hangzhou Xiangbo Electric Co., Ltd. |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Novel liquid cooling heat radiator for semiconductor device Effective date of registration: 20170728 Granted publication date: 20100609 Pledgee: Bank of Beijing, Limited by Share Ltd, Hangzhou, Xiaoshan branch Pledgor: Hangzhou Bo Bo heat transfer Polytron Technologies Inc Registration number: 2017330000076 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180828 Granted publication date: 20100609 Pledgee: Bank of Beijing, Limited by Share Ltd, Hangzhou, Xiaoshan branch Pledgor: Hangzhou Bo Bo heat transfer Polytron Technologies Inc Registration number: 2017330000076 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
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Address after: Room 702, building 3, no.371, Mingxing Road, Xiaoshan Economic and Technological Development Zone, Hangzhou, Zhejiang 311200 Patentee after: Xiangbo heat transfer technology Co.,Ltd. Address before: 311220 23 / F, building 1, Huarui center, Xiaoshan Economic Development Zone, Xiaoshan District, Hangzhou City, Zhejiang Province Patentee before: XENBO (HANGZHOU) HEAT TRANSFER SCIENCE & TECHNOLOGY Co.,Ltd. |