CN101416316B - 混合晶向沟道场效应晶体管 - Google Patents
混合晶向沟道场效应晶体管 Download PDFInfo
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- CN101416316B CN101416316B CN2006800142167A CN200680014216A CN101416316B CN 101416316 B CN101416316 B CN 101416316B CN 2006800142167 A CN2006800142167 A CN 2006800142167A CN 200680014216 A CN200680014216 A CN 200680014216A CN 101416316 B CN101416316 B CN 101416316B
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- effect transistor
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- 230000005669 field effect Effects 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 212
- 239000013078 crystal Substances 0.000 claims abstract description 185
- 239000012212 insulator Substances 0.000 claims description 19
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 229910003811 SiGeC Inorganic materials 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 4
- 238000005280 amorphization Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000348 solid-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (33)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/116,053 | 2005-04-27 | ||
US11/116,053 US7465992B2 (en) | 2005-04-27 | 2005-04-27 | Field effect transistor with mixed-crystal-orientation channel and source/drain regions |
PCT/US2006/015107 WO2006116098A2 (en) | 2005-04-27 | 2006-04-21 | Mixed -crystal-orientation channel field effect transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101416316A CN101416316A (zh) | 2009-04-22 |
CN101416316B true CN101416316B (zh) | 2011-06-29 |
Family
ID=37215304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800142167A Active CN101416316B (zh) | 2005-04-27 | 2006-04-21 | 混合晶向沟道场效应晶体管 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7465992B2 (zh) |
EP (1) | EP1875508A4 (zh) |
JP (1) | JP4474479B2 (zh) |
CN (1) | CN101416316B (zh) |
TW (1) | TWI373135B (zh) |
WO (1) | WO2006116098A2 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7531392B2 (en) * | 2006-02-27 | 2009-05-12 | International Business Machines Corporation | Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same |
US20070224785A1 (en) * | 2006-03-21 | 2007-09-27 | Liu Mark Y | Strain-inducing film formation by liquid-phase epitaxial re-growth |
US7642197B2 (en) * | 2007-07-09 | 2010-01-05 | Texas Instruments Incorporated | Method to improve performance of secondary active components in an esige CMOS technology |
US20090057816A1 (en) * | 2007-08-29 | 2009-03-05 | Angelo Pinto | Method to reduce residual sti corner defects generated during spe in the fabrication of nano-scale cmos transistors using dsb substrate and hot technology |
JP5178103B2 (ja) * | 2007-09-12 | 2013-04-10 | 株式会社東芝 | 半導体装置およびその製造方法 |
US20090283829A1 (en) * | 2008-05-13 | 2009-11-19 | International Business Machines Corporation | Finfet with a v-shaped channel |
JP2011146691A (ja) | 2009-12-15 | 2011-07-28 | Sumitomo Chemical Co Ltd | 半導体基板、半導体デバイスおよび半導体基板の製造方法 |
US9577079B2 (en) * | 2009-12-17 | 2017-02-21 | Infineon Technologies Ag | Tunnel field effect transistors |
CN102543744B (zh) * | 2010-12-29 | 2014-12-24 | 中芯国际集成电路制造(北京)有限公司 | 晶体管及其制作方法 |
US8878251B2 (en) | 2012-10-17 | 2014-11-04 | Seoul National University R&Db Foundation | Silicon-compatible compound junctionless field effect transistor |
US9263586B2 (en) | 2014-06-06 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure |
US9520496B2 (en) * | 2014-12-30 | 2016-12-13 | International Business Machines Corporation | Charge carrier transport facilitated by strain |
US9768254B2 (en) * | 2015-07-30 | 2017-09-19 | International Business Machines Corporation | Leakage-free implantation-free ETSOI transistors |
KR102618493B1 (ko) | 2018-08-03 | 2023-12-27 | 삼성전자주식회사 | 반도체 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020130378A1 (en) * | 2001-03-15 | 2002-09-19 | Leonard Forbes | Technique to mitigate short channel effects with vertical gate transistor with different gate materials |
US20040173812A1 (en) * | 2003-03-07 | 2004-09-09 | Amberwave Systems Corporation | Shallow trench isolation process |
US20040217352A1 (en) * | 2003-04-29 | 2004-11-04 | Micron Technology, Inc. | Strained semiconductor by wafer bonding with misorientation |
CN1581497A (zh) * | 2003-08-05 | 2005-02-16 | 国际商业机器公司 | 采用晶片键合和simox工艺的不同晶体取向自对准soi |
CN1591826A (zh) * | 2003-08-25 | 2005-03-09 | 国际商业机器公司 | 集成半导体结构和应变绝缘硅的制造方法及应变绝缘硅 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04335538A (ja) * | 1991-05-10 | 1992-11-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US7329923B2 (en) * | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
US7034362B2 (en) * | 2003-10-17 | 2006-04-25 | International Business Machines Corporation | Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures |
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2005
- 2005-04-27 US US11/116,053 patent/US7465992B2/en active Active
-
2006
- 2006-04-13 TW TW095113156A patent/TWI373135B/zh not_active IP Right Cessation
- 2006-04-21 CN CN2006800142167A patent/CN101416316B/zh active Active
- 2006-04-21 JP JP2008508953A patent/JP4474479B2/ja active Active
- 2006-04-21 EP EP06750977A patent/EP1875508A4/en not_active Withdrawn
- 2006-04-21 WO PCT/US2006/015107 patent/WO2006116098A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020130378A1 (en) * | 2001-03-15 | 2002-09-19 | Leonard Forbes | Technique to mitigate short channel effects with vertical gate transistor with different gate materials |
US20040173812A1 (en) * | 2003-03-07 | 2004-09-09 | Amberwave Systems Corporation | Shallow trench isolation process |
US20040217352A1 (en) * | 2003-04-29 | 2004-11-04 | Micron Technology, Inc. | Strained semiconductor by wafer bonding with misorientation |
CN1581497A (zh) * | 2003-08-05 | 2005-02-16 | 国际商业机器公司 | 采用晶片键合和simox工艺的不同晶体取向自对准soi |
CN1591826A (zh) * | 2003-08-25 | 2005-03-09 | 国际商业机器公司 | 集成半导体结构和应变绝缘硅的制造方法及应变绝缘硅 |
Also Published As
Publication number | Publication date |
---|---|
US20060244068A1 (en) | 2006-11-02 |
WO2006116098A2 (en) | 2006-11-02 |
EP1875508A2 (en) | 2008-01-09 |
WO2006116098A3 (en) | 2008-10-30 |
EP1875508A4 (en) | 2009-08-05 |
JP2008539593A (ja) | 2008-11-13 |
CN101416316A (zh) | 2009-04-22 |
TW200707736A (en) | 2007-02-16 |
JP4474479B2 (ja) | 2010-06-02 |
TWI373135B (en) | 2012-09-21 |
US7465992B2 (en) | 2008-12-16 |
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