CN101414650B - 一种纳米晶/非晶硅两相薄膜太阳电池的制备方法 - Google Patents
一种纳米晶/非晶硅两相薄膜太阳电池的制备方法 Download PDFInfo
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Abstract
本发明公开了一种纳米晶/非晶硅两相薄膜太阳电池的制备方法，包括对玻璃表面进行清洗；利用PECVD沉积SiN薄膜；在电池的正面沉积一层ITO透明导电薄膜，在ITO/玻璃衬底上制备氢化纳米晶/非晶硅两相薄膜；利用B离子注入能量在200～250keV、剂量在1×1017～4×1017/cm2，形成P型层；利用P离子注入能量在15～30keV，剂量在2×1017～5×1017/cm2，形成N型层。本发明避免了有毒气体磷烷和硼烷的使用，B、P的掺杂激活率高；降低p和n层中的杂质俘获中心，提高电子和空穴的收集效率，降低接触电阻，提高短路电流。
Description
技术领域
本发明涉及一种太阳电池的制备方法，特别是一种结合子注入技术制造纳米晶/非晶硅两相纳米硅薄膜太阳电池的制备方法，用于光伏技术和半导体技术领域。
背景技术
目前在太阳能电池制造业中，晶体硅和多晶硅太阳电池在市场所占份额在80％以上。由于硅材料的短缺和价格的居高不下，导致体硅太阳电池的制造成本始终处于高位，加之体硅的生产过程中能源消耗高，对环境造成的污染严重，为此发展薄膜太阳电池势在必行。目前硅基薄膜太阳电池的生产主要基于非晶硅薄膜材料，非晶硅薄膜具有沉积温度低，可在玻璃、柔性衬底上大面积制备，改进后的非晶硅薄膜太阳电池具有低成本，低能耗，低污染的特点，但由于其光热稳定性差(S-W效应)，转换效率低，制约了非晶硅薄膜太阳电池的发展。
纳米晶/非晶硅两相薄膜薄膜是近十多年来随着纳米硅科学技术的发展而兴起的一种人工功能半导体材料。利用纳米晶/非晶硅两相薄膜制备太阳能电池，既有非晶硅以上的特点，但克服了非晶硅太阳电池的S-W效应，从而体现出独特的优势。然而目前制备纳米晶/非晶硅两相薄膜太阳电池中p和n层都是利用PH3/SiH4，BH3/SiH4混合气体做反应气体，从而实现B和P的掺杂。由于在PECVD(等离子增强气相沉积方法)沉积过程中B和P的掺杂效率较低，一般制备工艺中的PH3/SiH4，BH3/SiH4的比利要高达1％，所以薄膜中杂质含量高，导致载流子的迁移率低，收集效率低，太阳电池的效率低。
发明内容
本发明的目的是针对现有技术中存在的上述缺陷，提供一种纳米晶/非晶硅两相薄膜太阳电池的制备方法，通过控制离子注入能量和剂量以及纳米晶/非晶硅两相薄膜层的厚度实现对太阳电池性能的优化，有效提高了太阳电池的效率。
本发明采用的技术方案是包括如下步骤：
(1)衬底清洗：选用玻璃衬底，利用氨水/双氧水/去离子水＝1∶1∶5对玻璃表面进行清洗，再用去离子水清洗，氮气吹干；
(2)减反膜SiN的制备：利用PECVD沉积SiN薄膜；
(3)正面电极的形成：用射频溅射工艺在电池的正面沉积一层ITO透明导电薄膜，
(4)在ITO/玻璃衬底上利用PECVD制备氢化纳米晶/非晶硅两相薄膜；
(5)利用B离子注入，B离子注入能量在200～250keV、剂量在1×1017～4×1017/cm2，形成P型层；
(6)利用P离子注入：P离子注入能量在15～30keV，剂量在2×1017～5×1017/cm2，形成N型层；
(7)利用快速退火炉在氮气保护下退火激活掺杂离子；
(8)利用电子束蒸发的方法沉积铝背电极；
(9)利用快速退火炉在氮气保护下退火。
本发明的有益效果是：
1、从纳米晶/非晶硅两相薄膜p型层和n型层的制备看，与通常利用SiH4/PH3，SiH4/BH3气体制备p型层和n型层相比，避免了有毒气体磷烷和硼烷的使用。
2、利用离子注入的方法，B、P的掺杂激活率高；降低p和n层中的杂质俘获中心，提高电子和空穴的收集效率，降低接触电阻，提高短路电流。
3、掺杂剂量控制精确，从而降低薄膜中杂质浓度，降低电子，空穴的俘获陷阱密度。其次，从pin结构的形成看，由于氢化纳米晶/非晶硅两相薄膜是一气呵成，就不会出现分室间断生长出现的在层与层之间出现的一些过渡层，导致缺陷密度增加，从而降低载流子的收集效率。
4、氢化纳米晶/非晶硅两相薄膜层是连续生长，避免了由于目前采用的三室沉积(分别生长本征层，p型层和n型层)导致的各界面间的过渡层，从而界面态密度大大降低。从太阳电池的制造设备看，PECVD设备可以从三室简化成单室PECVD设备。
具体实施方式
本发明具体按下面步骤实施：
1、方法是选用玻璃衬底，清洗衬底利用氨水/双氧水/去离子水＝1∶1∶5对玻璃表面进行清洗，再用去离子水清洗，氮气吹干。
2、利用PECVD沉积减反膜SiN薄膜。
3、用射频溅射工艺在电池的正面沉积一层ITO透明导电薄膜，形成正面电极，该透明导电薄膜既起到电极的作用，又起到了光学减反射的作用。
4、在ITO/玻璃衬底上利用PECVD制备氢化纳米晶/非晶硅两相薄膜。
5、利用B离子注入，形成P型层，根据纳米晶/非晶硅两相薄膜的厚度，改变B的注入能量。其中B离子注入能量在200～250keV，和剂量在1×1017～4×1017/cm2左右
6、利用P离子注入，形成N型层，其中P离子注入能量在15～30keV，剂量在2×1017～5×1017/cm2左右。
7、利用快速退火炉在氮气保护下退火激活掺杂离子。
8、利用电子束蒸发的方法沉积铝背电极。该铝层既起到电极的作用，也起到反射的作用，增强光在薄膜的中的吸收。
9、利用快速退火炉在氮气保护下退火来提高电极和N型层的欧姆接触，降低串联电阻。
实施例
制备玻璃/ITO/P+-nc-Si/I-nc-Si/N+-nc-Si/Al结构的太阳电池，采用上述的步骤(1)进行化学预处理；采用步骤(2)沉积ITO透明导电膜；样品加热到200℃，溅射气体为氩气和氧气，氩气和氧气的分压比是10∶1，总压强是0.5Pa，溅射功率密度是40mW/cm2溅射沉积时间是40分钟，薄膜厚度约80nm。采用步骤(3)制备厚为600nm的纳米硅薄膜；具体工艺条件是：沉积系统的本底真空是5×10-5Pa。反应气体为硅烷和氢气混合气体，硅烷和氢气的流量比是10∶1，总流量是120sccm，工作压强是80Pa。功率是330W，沉底温度是280℃，沉积时间5小时，膜厚是600nm。采用步骤(5)，制备掺杂发射层，B的注入能量是200keV，注入剂量是2×1017/cm2，形成一层厚60nm p+-nc-Si发射层。采用步骤(6)制备掺杂收集层，P的注入能量是30keV，注入剂量是3×1017/cm2，形成一层厚约50nm n+-nc-Si发射层。采用步骤(7)在700℃氮气气氛下进行退火60秒。采用步骤(8)蒸发沉积100nm厚的铝层，作为背电极。采用步骤(9)在400℃氮气气氛下进行退火15秒。
本实施例的效果是：最后进行电池的性能测试，在AM1.5，100mW/cm2标准光强的造射下，该实施例一所制备的2cm×2cm纳米晶/非晶硅两相薄膜太阳电池的开路电压Voc为0.61V，短路电流JSC为26.5mA/cm2，填充因子FF为70％，效率为11.9％。
Claims (1)
1.一种纳米晶/非晶硅两相薄膜太阳电池的制备方法，其特征是包括如下步骤：
(1)衬底清洗：选用玻璃衬底，利用氨水/双氧水/去离子水＝1∶1∶5对玻璃表面进行清洗，再用去离子水清洗，氮气吹干；
(2)减反膜SiN的制备：利用PECVD沉积SiN薄膜；
(3)正面电极的形成：用射频溅射工艺在电池的正面沉积一层ITO透明导电薄膜，
(4)在ITO/玻璃衬底上利用PECVD制备氢化纳米晶/非晶硅两相薄膜；
(5)利用B离子注入：B离子注入能量在200～250keV、剂量在1×1017～4×1017/cm2，形成P型层；
(6)利用P离子注入：P离子注入能量在15～30keV，剂量在2×1017～5×1017/cm2，形成N型层；
(7)利用快速退火炉在氮气保护下退火激活掺杂离子；
(8)利用电子束蒸发的方法沉积铝背电极；
(9)利用快速退火炉在氮气保护下退火。
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| CN106783544A (zh) * | 2016-12-23 | 2017-05-31 | 武汉华星光电技术有限公司 | 多晶硅层的制造方法和薄膜晶体管的制造方法 |
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| CN102157594B (zh) * | 2011-03-18 | 2014-04-09 | 江苏大学 | 一种超晶格量子阱太阳电池及其制备方法 |
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