CN101392150A - Polishing solution capable of recycling use - Google Patents
Polishing solution capable of recycling use Download PDFInfo
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- CN101392150A CN101392150A CNA2008102264668A CN200810226466A CN101392150A CN 101392150 A CN101392150 A CN 101392150A CN A2008102264668 A CNA2008102264668 A CN A2008102264668A CN 200810226466 A CN200810226466 A CN 200810226466A CN 101392150 A CN101392150 A CN 101392150A
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Abstract
The invention discloses a polishing slurry which can be reused. The technical proposal is that: 2 percent to 5 percent of silicon dioxide abrasive, 0.5 percent to 2 percent of pH regulator, 0.5 percent to 1 percent of chelating agent, 0.1 percent to 1 percent of surfactant and the rest of deionized water are mixed and stirred, thus obtaining the polishing slurry. The polishing slurry prepared by the technical proposal can be reused at least for ten times under the application condition of silicon chip rough polishing, and the polishing velocity and uniformity and the surface quality are in accordance with the processing requirements.
Description
Technical field
The present invention relates to a kind of polishing fluid that can be recycled, relate in particular to the silicon wafer chemical mechanical polishing liquid of a kind of cycle index more than at least ten times.
Background technology
At present, the employed traditional chemical machine polishing liquor of silicon wafer is disposable, and consumption is very big.Chemically machinery polished market in 2005 shows, about 1,100,000,000 U.S. dollars of CMP consumptive material, and wherein polishing fluid and polishing pad occupy the overwhelming majority, about 1,000,000,000 U.S. dollars.Usually the each polishing of each wafer needs the polishing fluid of 600ml at least, if produce the IC factory of 30000 wafer per month, each wafer needs the metal CMP more than 6 times at least, and present polishing fluid price is generally at 80～120 yuan/liter, then such production line every year, only one of polishing fluid just needed to consume nearly 100,000,000 yuan, and the liquid waste disposal after the polishing also influences environment greatly.Because the consumption of polishing fluid and the needs of environment protection; the industry peer begins to pay close attention to recycling of polishing fluid; to reduce cost and to the influence of environment; yet five PH decline afterwards of the polishing fluid product of its release circulation is greater than 1; cause that polishing speed descends rapidly, serious problems appear in surface quality.
Therefore be necessary to propose a kind of polishing fluid that can be recycled, to address the above problem.Can under silicon wafer rough polishing application conditions, recycle at least ten times, and polishing speed, polishing uniformity coefficient and surface quality meet processing request.
Summary of the invention
The object of the present invention is to provide a kind of polishing fluid that can be recycled, can under silicon wafer rough polishing application conditions, recycle at least ten times, and polishing speed, polishing uniformity coefficient and surface quality meet processing request.
To achieve these goals, technical scheme of the present invention is as follows: a kind of chemical mechanical polishing liquid of silicon wafer, its technical characterictic is: abrasive silica 2-5% during use, PH conditioning agent 0.5-2%, sequestrant 0.5-1%, tensio-active agent 0.1-1%, all the other are deionized water, mix, stir and form.
On the basis of technique scheme, priority scheme is as follows:
The PH conditioning agent is an organic amine.
The pH value scope of polishing fluid is 11.2-12.2, and particle size range is 40-60nm.
Polishing fluid recycles after ten times, and the pH value drop-out value is at 0.3-0.4.
The Na ion content scope of polishing fluid is at 0.04-0.07%.
Polishing fluid recycles after ten times, and polishing speed is 1um/min.
Adopt technical scheme of the present invention, have the following advantages:
1) reduces wafer factory and aspect polishing fluid, consume, save cost.
2) high polishing efficiency effectively shortens the process-cycle, enhances productivity.
3) reduce pollution, help environmental protection.
Embodiment
Embodiment 1
Configuration 100 gram silicon dioxide abradant polishing solutions.
To the 40+ of 92 gram 40-60nm particle diameters/-add 6 in the silica hydrosol solution (is 1.26 at 25 ℃ of proportions) of 0.5wt% to restrain the PH conditioning agents, 1.5 gram sequestrant, 0.5 gram tensio-active agent, mix together, the polishing fluid pH value scope of being joined is at 11.2-12.2, Na ion content scope is at 0.04-0.07%, and viscosity is less than 5mPa.s.
When using this polishing fluid; be the proportioning of polishing fluid of being prepared and deionized water the 1:16 dilution earlier; after the silicon chip passed examination after the abrasive disc cleaning; adopting the U.S.'s 3800 type chemical-mechanical polishing mathings; under the situation of RodelIC1400 polishing pad; polish pressure 200g/cm2, rotating speed 55rpm, polishing flow 200ml/min; polish temperature 48-50 ℃; 4 cun P of silicon (100) are carried out specified time processing, and the polishing fluid cycle index is set 10 times, cleans after the polishing; PH drops to 0.3-0.4; polishing speed is more than the 1um/min, and surface quality meets the requirement of Silicon Wafer factory, can large-scale production.
Embodiment 2
Configuration 1200 gram silicon dioxide abradant polishing solutions.
To the 50+ of 1060 gram 50-60nm particle diameters/-add 97 in the silica hydrosol solution (is 1.37 at 25 ℃ of proportions) of 0.5wt% to restrain the PH conditioning agents, 34 gram sequestrants, 9 gram tensio-active agents, mix together, the polishing fluid pH value scope of being joined is at 11.2-12.2, Na ion content scope is at 0.04-0.07%, and viscosity is less than 25mPa.s.
When using this polishing fluid; be the proportioning of polishing fluid of being prepared and deionized water that 1:20 dilutes after the silicon chip passed examination after the abrasive disc cleaning earlier; adopting the U.S.'s 3800 type chemical-mechanical polishing mathings; under the situation of RodelIC1400 polishing pad; polish pressure 200g/cm2; rotating speed 55rpm; polishing flow 200ml/min, carries out specified time processing to 4 cun P of silicon (100) by polish temperature 48-50 ℃; the polishing fluid cycle index is set 10 times; clean after the polishing, PH drops to 0.3-0.4, and polishing speed is more than the 1um/min; surface quality meets the requirement of Silicon Wafer factory, can large-scale production.
Though the present invention with preferred embodiment openly as above; but it is not in order to qualification the present invention, any person skilled in the art, without departing from the spirit and scope of the present invention; all can do various changes and modification, so protection scope of the present invention should be with being as the criterion that claims were defined.
Claims (6)
1. polishing fluid that can be recycled is characterized in that hundred parts of the component of polishing fluid and weight are such as down: abrasive silica 2-5; PH conditioning agent 0.2-2; Sequestrant 0.1-0.5; Tensio-active agent 0.01-0.5; Surplus is a deionized water.
2. a kind of polishing fluid that can be recycled according to claim 1 is characterized in that the PH conditioning agent is an organic amine.
3. a kind of polishing fluid that can be recycled according to claim 1 is characterized in that the pH value scope of described polishing fluid is 11.2-12.2, and particle size range is 40-60nm.
4. a kind of polishing fluid that can be recycled according to claim 3 is characterized in that described polishing fluid recycles after ten times, and the pH value drop-out value is at 0.3-0.4.
5. a kind of polishing fluid that can be recycled according to claim 1 is characterized in that, the Na ion content scope of described polishing fluid is at 0.04-0.07%.
6. a kind of polishing fluid that can be recycled according to claim 3 is characterized in that described polishing fluid recycles after ten times, and polishing speed is 1um/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102264668A CN101392150A (en) | 2008-11-12 | 2008-11-12 | Polishing solution capable of recycling use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102264668A CN101392150A (en) | 2008-11-12 | 2008-11-12 | Polishing solution capable of recycling use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101392150A true CN101392150A (en) | 2009-03-25 |
Family
ID=40492668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102264668A Pending CN101392150A (en) | 2008-11-12 | 2008-11-12 | Polishing solution capable of recycling use |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101392150A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102358825A (en) * | 2011-08-05 | 2012-02-22 | 清华大学 | Polishing composition for sapphire wafer |
| CN102358824A (en) * | 2011-07-29 | 2012-02-22 | 清华大学 | Polishing composition for ultra-precision surface manufacture of hard disk substrate |
| CN113549400A (en) * | 2021-08-10 | 2021-10-26 | 万华化学集团电子材料有限公司 | Method for improving cyclic utilization rate of polishing solution and silicon wafer polishing method |
-
2008
- 2008-11-12 CN CNA2008102264668A patent/CN101392150A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102358824A (en) * | 2011-07-29 | 2012-02-22 | 清华大学 | Polishing composition for ultra-precision surface manufacture of hard disk substrate |
| CN102358824B (en) * | 2011-07-29 | 2013-08-21 | 清华大学 | Polishing composition for ultra-precision surface manufacture of hard disk substrate |
| CN102358825A (en) * | 2011-08-05 | 2012-02-22 | 清华大学 | Polishing composition for sapphire wafer |
| CN113549400A (en) * | 2021-08-10 | 2021-10-26 | 万华化学集团电子材料有限公司 | Method for improving cyclic utilization rate of polishing solution and silicon wafer polishing method |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20090325 |