CN101369718A - Production method and apparatus for single-slice integrated semiconductor laser array - Google Patents
Production method and apparatus for single-slice integrated semiconductor laser array Download PDFInfo
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Method for manufacturing a monolithic integrated semiconductor laser array, wherein each laser DFB grating structure in the array being sampling Bragg grating structure, the grating of each DFB semiconductor laser waveguide in the array is sampling Bragg grating, and the sampling Bragg grating containing equivalent grating corresponding to the common Bragg grating; the mase wavelength of the DFB semiconductor laser is determined by sampling period of the sampling structure of the sampling Bragg grating within the equivalent grating action bandwidth of the sampling Bragg grating, and it is able to change mase wavelength by changing sampling period. The sampling period is increased or decreased by mask plate with various sampling pattern, and various wavelength mases are implemented by closing in or outlying a center wavelength of the DFB laser mase wavelength, thus to implement multi-channel multi-wavelength laser array; the invention implements various complicated equivalent phase-shift with sub-micron stage accuracy, namely corresponding equivalent grating has Lambada/4 phase-shift, Lambada/8 phase-shift and a CPM structure.
Description
Technical field
The invention belongs to the photoelectron technology field, relevant with the distributed feedback semiconductor laser array, the design and fabrication that relates to the complex distributions feedback semiconductor laser, more specifically, be based on method and the device that reconstruct-equivalent chirp technology prepares distributed feed-back (DFB) semiconductor laser array.
Background technology
Along with the information photoelectric technology in the application in fields such as communication, detection more and more widely, relevant industries are also more and more higher to the requirement of monolithic integrated device, this is one of commanding elevation of future information technology.Use the monolithic integration module that the communication core that capacity is big, volume is little, cost is low equipment can be provided, as be considered to the most promising Axiowave Networks Inc.-American I nfinera company, integrated light emission module of monolithic and the receiver module commercial product of 10 * 10Gb/s can be provided, and also Success in Experiment of the chip of 40 * 40Gb/s.In addition, the integrated chip of photoelectricity mixing is also being studied energetically by famous Intel Company, prepares for following computer-internal adopts optics " data path " low-cost, trillion bits (TB) magnitude, and impels the high-performance calculation application to welcome the New Times.The data link integrated chip of trillion bits is provided, and single chip integrated multi-wavelength module is necessary.Modulator on the monolithic integration module, explorer response mode are broadband response, and actual the manufacturing do not relate to the wavelength notion, make relatively easy.Therefore the integrated multi-wavelength laser array of monolithic is one of maximum difficult point that realizes high-performance monolithic integration module.Multi-wavelength distributed feed-back (DFB) laser array is the core of monolithic integrated optical fiber transport module.The dfb semiconductor laser that while all needs line width, warbles low, that unimodular property is good in many fields of communication.The integrated multi-wavelength laser array of monolithic will guarantee definitely that each laser is single mode operation, and this just needs each laser to have labyrinth.Therefore, although the integrated multi-wavelength dfb laser array of monolithic is extremely important, its technology realizes that difficulty makes very difficulty of its commercialization.
The effective means of making low cost DFB laser is to use the holographic exposure technology to form DFB Prague (Bragg) optical grating construction, but traditional holographic exposure technology almost is difficult in the multi-wavelength mechanism (as 4 to 40 wavelength) of very little chip area (hundreds of microns * hundreds of microns) provider with level.In addition, a free-revving engine of development monolithic integrated chip is the cost that reduces high speed, high-capacity optical fiber transmission network nucleus equipment, so rate of finished products also is one of important references factor of its commercialization feasibility.The Bragg grating of the index-coupled Distributed Feedback Laser of making based on traditional holographic exposure technology is simple relatively homogeneous texture, and therefore, the laser made of holographic exposure is a dual-mode of operation in theory.But in actual applications because laser both sides end face reflected phase will difference can realize single module lasing.But because reflected phase will has randomness, its single mode rate of finished products is not high; And during High Speed Modulation, its side mode suppression ratio (SMSR) can not satisfy the needs of high speed optical communication less than 20dB.In addition, the single Distributed Feedback Laser rate of finished products that traditional holographic exposure technology is made can be very not high from principle, is generally about 50% [1].Realize single chip integrated multi-wavelength laser array, rate of finished products is difficult to reach commercial level, and as being 70% calculating with single rate of finished products, the rate of finished products of 4 integrated dfb laser array of wavelength monolithic is 0.7
4The rate of finished products of=24%, 8 integrated dfb laser array of wavelength monolithic is 0.7
8The rate of finished products of=5.8%, 16 integrated dfb laser array of monolithic has only 0.7
16=0.33%.Adopt traditional holographic exposure technology to realize that dense wave division multipurpose (DWDM) monolithic integrated chip satisfies the probability of stablizing single mode operation simultaneously and can sharply descend along with the increase of number of wavelengths, therefore, realize that commercial DWDM monolithic integration laser chip is difficult to.The effective means of the integrated multi-wavelength laser array of making monolithic that is written into document at present is few, for example make the crooked deformation of laser waveguide, use positive and negative glue etc. simultaneously, but technology all is difficult to really be used industrial.Wherein the most effective, technology is that (electron beam lithography, EBL), electron beam exposure system is that a kind of electron beam that utilizes scans the device that directly produces figure on the workpiece face to electron beam exposure flexibly.Electron beam lithography has the advantage that can directly portray fine pattern, and the wavelength of high-power electron beam short (less than 1 nanometer), can avoid diffraction effect, is the optimal selection of the small nanoelectronic/photonic element of making in laboratory.Electron beam exposure is used for making complicated micro-structural in scientific research extremely successful, can be used for developing very complicated high-performance, high finished product rate Distributed Feedback Laser, comprise the dwdm system chip of laser, but its equipment one-time investment costliness, the operating cost height, and big when chip structure variation, fine structure difference, when structural change density is high, need meticulous inscription, cause be multiplied needed running time, make the cost of making baroque DWDM chip of laser higher, be difficult to adapt to the needs of following low cost, high performance chips exploitation, production.Therefore how on the very small size of chip, (to be generally less than several millimeters * several millimeters) and to realize that high-quality, multi-wavelength, baroque DWDM laser array are the emphasis and the difficult points of this type of chip of development.
The integrated circuit that adopts planar technique to develop has been started the road of integrated circuit industry batch process.The integrated circuit planar technique is made of series of processes such as epitaxial growth, oxidation, photoetching, doping (diffusion and ion inject), metallization, and wherein photoetching technique is to produce the key link of integrated circuit in enormous quantities.Planar technique is also adopted in the production of Distributed Feedback Laser, and wherein the holographic exposure technology type is like photoetching technique, and adopting holographic exposure technology development DFB structure is the key of producing low-costly and in high volume.Therefore, find a kind of technology, both had the holographic exposure technology low-costly and in high volume with the advantage of practicability, have flexible, the baroque advantage of electron beam lithography again, be to realize key low-cost, high-performance DWDM chip of laser.
2004, a kind of new DFB grating technology, promptly reconstruct-equivalent chirp (Reconstruction-equivalent-chirp) technology (REC technology) [2,3] is born.Reconstruct-equivalent chirp technology is to be suggested in the process of research optical fiber Bragg raster new structure, is characterized in: utilize common making platform (control precision of micron dimension) equivalence to realize DFB structure very complicated in the optical fiber, that often need the making precision of nanometer scale just can obtain.For given filtering characteristic, the DFB grating cycle that conventional design method provides changes, and its craft precision requires usually in nanometer scale; And the DFB grating cycle that reconstruct-equivalent chirp technology method provides is uniformly, and the filtering characteristic that needs then is by periodic modulation (being referred to as sampling or the sampling usually) decision to grating integral body.On fiber grating, be thousands of times of DFB grating cycle typical modulation period, therefore, utilize reconstruct-equivalent chirp technology, can realize a lot of high-performance optical fiber grating devices that use precision equipment very could realize that originally have only on the common process platform, wherein most typical is optical code division multiple access (OCDMA) encoding and decoding sheets, has broken by the highest OCDMA encoding and decoding sheet of Japanese OKI company/Japanese national communication research institute/Osaka university maintenance and has counted world record [4,5,6].Reconstruct-equivalent chirp technology also has been used for the development of some special Distributed Feedback Lasers, particularly ought be applied in [7,8] on the semiconductor laser, has very important industry meaning.This is because reconstruct-equivalent chirp technology in the development of plane complicated grating, can be made complicated equivalent optical grating construction as the electron beam exposure technology, the basic simultaneously advantage that keeps traditional holographic exposure technology.
Reconstruct-equivalent chirp technology can be traced back to people such as Feng Jia, Chen Xiangfei in 2002 the earliest at Chinese invention patent " Bragg grating with new sampling structure that is used for compensation of dispersion and polarization mode disperse " (CN02103383.8, Granted publication number: proposed CN1201513) by the sampling period of introducing the sampling Bragg grating the warble method of (CGP) of grating cycle that (CSP) obtain needed equivalence of warbling.Proposing equivalent chirp document the earliest can be with reference to Xiangfei Chen et.al, " Analytical expression of sampled Bragg gratings with chirp in thesampling period and its application in dispersion management design in a WDM system " (having the analysis expression of the sampling Bragg grating that the sampling period warbles and it application) at the wavelength-division multiplex system dispersion management, IEEE Photonics Technology Letters, 12, pp.1013-1015,2000.The characteristics of this equivalent chirp technology are to adopt sub-micrometer precision just can make the Bragg grating with needed equivalent chirp.This special Bragg grating is the sampling Bragg grating.The sampling Bragg grating has a plurality of reflection peaks, and each reflection peak is represented a shadow grating (ghost grating), corresponding fourier coefficient.The shadow grating of representing fourier coefficient+1 or-1 respectively at two reflection peaks of the left side of centre wavelength (short wavelength) and the right (long wavelength) respectively that the decentre bragg wavelength is nearest, its effect is identical with common Bragg grating (non-sampling Bragg grating).Therefore with the distribution of complicated sampling period form complexity+1 or-1 grade shadow grating, can replace common Bragg grating, be called equivalent grating.The equivalence grating can have identical performance with needed common Bragg grating, and equivalent grating can replace common Bragg grating fully on the effect wave band of common Bragg grating.The complex characteristics of equivalence grating can distribute by the sampling period that changes sampled-grating and obtain, and the sampling period generally will be far longer than the grating cycle, therefore can simplify the production process of special Bragg grating (equivalent grating) greatly.The method has very big cost advantage and technical characteristic, and can design the equivalent grating with different optical response, and need not to change template.Simultaneously, this technology can realize the equivalent chirped grating of various complexity on the submicron order precision that is easy to realize, and this equivalent chirped grating is the same with the complicated chirped grating role that has inferior nano-precision realization really.Chirp grating is meant the uneven grating of grating constant (cycle of index modulation).
Equivalent chirp technology guarantees that fully single order equivalent chirp, second order equivalence chirped grating, high-order equivalence chirped grating etc. can separately obtain.Dai Yitang, people such as Chen Xiangfei at Chinese invention patent " sampling optical fiber grating that DS-OCDMA system coding decoding is used and preparation method thereof " (CN200410009546.X) and document Yitang Dai, Xiangfei Chen et.al, " Equivalent phase shift in a fiber Bragg grating achieved bychanging the sampling period " (Prague sampling period obtains equivalent phase shift in the employing change Fiber Bragg Grating FBG), IEEE Photon.Tech.Lett., vol.16, pp.2284-2286 has proposed the equivalent phase shift notion in 2004.Further, people such as Dai Yitang, Chen Xiangfei proposes a kind of design and makes to have method and the technology that any physical can realize the equivalent grating of filtering characteristic in Chinese invention patent " a kind of method for producing multiple channel filter based on fiber grating " (CN200410083938.0).This technology is a kind of new technology in conjunction with reconfiguration technique and equivalent chirp technology, we are referred to as reconstruct-equivalent chirp technology, be called for short the REC technology, but list of references: Yitang Dai, Xiangfei Chen et.al, " Sampled Bragg grating with desired response in one channel by useofa reconstruction algorithm and equivalent chirp " (adopts reconstruct and equivalent chirp method, can in a channel, obtain the sampling Bragg grating of predetermined response to), Opt.Lett., vol.29,1333-1335,2004.Use the REC technology, can realize in the scope, design and produce various needed complex characteristics equivalence gratings on the common experiment porch of use sub-micrometer precision at physics.Doing in the dedicated bandwidth of equivalent grating, equivalent grating can replace common Bragg grating fully, and they have identical optic response; In other words, the common Bragg grating of complicated optic response can be replaced by corresponding equivalent grating, and their optic response is identical.Be used for replacing the equivalent grating of the common Bragg grating in the dfb semiconductor laser can use equivalent chirp and equivalent phase shift art designs and making.More complicated equivalent grating can be used reconstruct-equivalent chirp technology design and make.Need to prove that equivalent chirp and equivalent phase shift technology are the special cases of reconstruct-equivalent chirp technology.
The key issue that realizes high-quality multi-wavelength dfb laser array has two: (1) is at the multi-wavelength generation mechanism of less chip area; (2) the single stable single mode Distributed Feedback Laser of high finished product rate.Utilize reconstruct-equivalent chirp technology can well solve this two problems, that is: can use reconstruct-equivalent chirp technology control optical maser wavelength, utilize complicated equivalent optical grating construction to realize the very stable single-mode laser output of high finished product rate simultaneously.
In traditional Distributed Feedback Laser, employing mainly be λ/4 phase-shift structures.λ/4 phase shift dfb semiconductor lasers can be used for doing direct modulated laser.Directly the great advantage of modulation dfb semiconductor laser is (still can keep dynamic single mode under the situation of 2.5Gbit/s～10Gbit/s), be fit to very much the optical fiber telecommunications system of high speed short distance (as local area network (LAN)) in High Speed Modulation.The commercial at present direct modulation dfb semiconductor laser of using can reach about threshold current 5mA, can transmit kilometers up to a hundred under the 2.5Gbit/s modulation rate.
Also there are some problems in λ/4 phase-shift structures.Because, even built-in phase shift can be guaranteed laser and be operated near the threshold current under the single-mode, raise with injection current, the side mode suppression ratio of laser descends, and the longitudinal mode effects of spatial appears, cause laser many longitudinal modes phenomenon to occur and can't operate as normal.In fact, laser sharp penetrated the influence that characteristic very easily is subjected to spatial hole burning, in the λ/4 phase shift Distributed Feedback Lasers of high coupling coefficient, photon in the phase shift zone around accumulation, the heterogeneity of light field causes the appearance of longitudinal mode effects of spatial in the chamber.Therefore, must propose some and optimize structure and guarantee that Distributed Feedback Laser is operated under the single longitudinal mode mode, for example, the complex coupling structure absorbs coupled structure, the gain coupled structure.In addition, also can introduce and heterogeneously move structure, chirp structure or introduce the heterogeneous optical grating construction that moves, warbles simultaneously, make laser both have good unimodular property, also have good stable simultaneously, thereby improve the performance and the rate of finished products of high-performance Distributed Feedback Laser greatly.
λ/8 phase shift dfb semiconductor lasers are a kind of novel DFB phase shifted laser of deriving out on λ/4 semiconductor laser bases.Its characteristics are that the mirror loss negative feedback (negativeFEML) that λ/8 phase shifted laser are had can make its performance better, anti-external interference ability is stronger, unimodular property is more stable, compares to λ/4 semiconductor lasers and is applicable to long distance (as metropolitan area network) fibre system message transmission [9] more.
The CPM structure is by replace the structure of single phase shift with a plurality of equivalent phase shifts.Under the situation that keeps total phase shift constant magnitude, an isolated phase shift is distributed to the plurality of continuous interval, to improve the vertical optical field distribution in the semiconductor laser, make that common single-phase to move the sharp-pointed energy peak in laser light field center weakened, form mild optical field distribution, to overcome hole burning effect, simultaneously, the Distributed Feedback Laser of CPM structure can reduce live width, improves the semiconductor laser performance in all fields.
List of references:
[1]. Luo Yi, Wang Jian, Cai Pengfei, Sun Changzheng, " optical fiber communication semiconductor laser ", 2002 04 phases of ZTE Corporation's technology;
[2]. Dai Yitang, Chen Xiangfei, the lunar calendar, Jiang Dianjie, the clock of passing away, " a kind of fiber grating of realizing having the arbitrary target response ", Chinese invention patent CN200410007530.5;
[3] .Yitang Dai, Xiangfei Chen, Li Xia, Yejin Zhang, and Shizhong Xie, Sampled Bragg gratingwith desired response in one channel by use of a reconstruction algorithm and equivalent chirp (adopt reconstruct and equivalent chirp method, can in a channel, obtain the sampling Bragg grating of predetermined response to), Optics Letters, 2004,29 (12): 1333-1335;
[4] .Yitang Dai, Xiangfei Chen, Yu Yao, Jie Sun, and Shizhong Xie, 511-Chip, 500Gchip/sOCDMA En/Decoders Based on Equivalent Phase-Shift Method is (based on 511 chips of equivalent phase shift technology, spreading rate 500G OCDMA codec), OFC2006, paper OFF2.
[5] .Yitang Dai, Xiangfei Chen, Jie Sun, Yu Yao, and Shizhong Xie, High-performance, high-chip-count OCDMA en/decoders based on reconstruction equivalent-chirp technique (based on the high-performance of reconstruct-equivalent chirp technology, high number of chips OCDMA codec), Optics Letters, 2006,31 (11): 1618-1620.
[6] .Dai Yitang, Chen Xiangfei et.al, " Phase-Error-Free; 1023-Chip OCDMA En/De-CodersBased on Reconstruction-Equivalent-Chirp Technology and Error-Correction Method " (based on the no phase error 1023 chip OCDMA codecs of reconstruct-equivalent chirp technology and error correction method), OFC2007, JWA28.
[7]. Chen Xiangfei, " method and the device that are equipped with semiconductor laser based on reconstruct-equivalent chirp technology ", Chinese invention patent application: CN200610038728.9, International PCT patent, application number PCT/CN2007/000601.
[8] .DaiYitang, ChenxiangFei, " DFB Semiconductor LasersBased onReconstruction-Equivalent-Chirp Technology " (based on the dfb semiconductor laser of reconstruct-equivalent chirp technology), Optics Express, 15,2348 (2007).
[9] .Yidong Huang et.al, " Isolator-free 2.5-Gb/s80-km transmission by directly modulated λ/8phase-shifted DFB-LDs under negative feedback effect of mirror loss " (the straight accent λ/8 phase shift DFB diode luminescence pipes with mirror loss negative feedback do not have isolator 2.5-Gb per second, 80 kilometers transmission), IEEEPhotonicsTechnologyLetters, vol.13,245-247 (2001).
Summary of the invention
The objective of the invention is to make common holographic exposure to combine with common micrometer semiconductor manufacturing process, proposition is produced low-cost multi-wavelength DFB laser chip based on the dfb semiconductor laser array of the single chip integrated high-performance labyrinth of reconstruct-equivalent chirp technology (REC technology).The present invention also aims to propose technology, i.e. the manufacturing technology that combines of holographic exposure and mask technique based on the integrated multi-wavelength Distributed Feedback Laser of the monolithic of reconstruct-equivalent chirp technology.
Technical scheme of the present invention is: the manufacture method of single-slice integrated semiconductor laser array, directly related with the sampling period of sampling structure based on the Distributed Feedback Laser wavelength of reconstruct-equivalent chirp technology, the change sampling period just can change excitation wavelength.Promptly the laser of each in laser array DFB optical grating construction adopts the sampling Bragg-grating structure, be that the grating in each dfb semiconductor laser waveguide is the sampling Bragg grating in the array, the sampling Bragg grating contains the equivalent grating of corresponding common Bragg grating; The excitation wavelength of dfb semiconductor laser is done in the dedicated bandwidth at the equivalent grating of this sampling Bragg grating, and by the sampling period decision of sampling structure, the change sampling period just can change excitation wavelength.The mask plate of various sampling tessellations is carved with in use, increases or reduce the sampling period, can make the Distributed Feedback Laser excitation wavelength near or away from centre wavelength, just can realize that different wavelength is sharp to penetrate, realize multichannel multi-wavelength laser array.Equivalent grating is by reconstruct-equivalent chirp technology design and making in each Distributed Feedback Laser in the laser array, equivalence in the grating warble and phase shift is designed and is made by equivalent chirp and equivalent phase shift method respectively, promptly equivalent grating contains one or more equivalent phase shifts or equivalent chirp.Therefore, use the mask plate (manufacturings of IC micron technology) be carved with various sampling structure patterns, just can realize that different wavelength is sharp to penetrate.Increase or reduce the sampling period, can make the Distributed Feedback Laser excitation wavelength near or away from centre wavelength.For example, the sampling period changes to 13.7 microns gradually from 6.5 microns, just can realize 40 passages, 0.8 nanometer at interval, the multi-wavelength laser array of the change scope of 32 nanometers.Make sampling Bragg-grating structure semiconductor laser based on reconstruct-equivalent chirp technology, that is, the grating in the waveguide of the semiconductor laser of made is the sampling Bragg grating.The sampling Bragg grating contains equivalent grating corresponding to common Bragg grating, and the excitation wavelength of semiconductor laser is done in the dedicated bandwidth the equivalent grating of this sampling Bragg grating, and equivalent grating is designed and made by reconstruct-equivalent chirp technology.The sampling period of sampling Bragg grating is generally less than 20 microns, greater than 1 micron, has a plurality of shadow gratings, and the wavelength interval between the shadow grating is inversely proportional to the effective refractive index of sampling period and semiconductor laser waveguide.The sampling Bragg grating that contains equivalent grating is made by the method that sampling mask plate photoetching and holographic interference expose, the photoetching of sampling mask plate is used for producing equivalent chirp and equivalent phase shift in equivalent grating, and the holographic interference exposure is used for making basic Bragg-grating structure, forms the basic optical feedback mechanism.
Sampling Bragg-grating structure in the laser array in each laser prepares with following method: preparation earlier contains the mask lithography version plate that the needed sampling period of equivalent grating distributes, the sampling period of mask lithography version plate is generally 1 to 20 micron, the excitation wavelength of the sampling period of different mask plates by the preparation laser decides, the duty ratio in the cycle of each sampling (that is: having grating partly to account for the length ratio in whole sampling period) is generally 0.4 to 0.6, by concrete manufacture craft decision; Produce the sampling Bragg-grating structure by sampling mask plate photoetching and holographic interference exposure.
The excitation wavelength difference of the dfb semiconductor laser on the array, the excitation wavelength of laser be by the decision of the central bragg wavelengths of equivalent grating, that is, and and by the sampling period decision of sampled-grating.Change the sampling period of sampling structure, the also corresponding change of the sampling tessellation that is carved with on the mask plate, the different sampling tessellations of each laser are sequentially arranged on the mask plate, on array, formed the laser of the different excitation wavelengths that are arranged in order like this, form the multichannel array, can send the laser of multi-wavelength.The channel number is by the decision of laser number, and channel spacing determines that by the adjacent spaces width that difference swashs the radio frequency rate be generally 10G～400G scope, promptly excitation wavelength is at interval generally 10
-1Nm～10nm scope.
At least have an equivalent phase shift in the equivalent grating in the laser of laser array or have equivalent chirp, the equivalent phase shift of the equivalent grating of the various lasers in the array or equivalent chirp difference.λ/4 phase shift Distributed Feedback Lasers are arranged, λ/8 phase shifted laser and CPM structure dfb semiconductor laser.
λ/concrete structure of 4 phase shifts based on reconstruct-equivalent chirp technology among the present invention is: the sampling period of a certain position in the sampling Bragg grating (being generally the middle part) undergos mutation, and all the other sampling periods remain unchanged, and cause some reflection peak of sampling Bragg grating to reach the effect similar to common phase-shifted grating.This and Bragg grating phase shift corresponding characteristic is called as equivalent phase shift.Widely, if the sampling period of a plurality of positions of sampling Bragg grating undergos mutation, some reflection peak of this sampling Bragg grating will produce and the heterogeneous similar equivalent phase shift of common grating that moves so.The sampled-grating center ± 15% zone in, have sampling period to take place to change suddenly, the cycle after the variation is 1.4 to 1.6 times or 0.4 to 0.6 times of primitive period, and that other sampling period keeps is constant; If particularly a sampling period at sampling Bragg grating center is changed into 1.5 times or 0.5 times of its former length, and other sampling period remains unchanged, just can make the odd level reflection peak of sampled-grating equivalent λ/4 phase shifts take place (referring to DianjieJiang, Xiangfei Chen et.al, " A novel distributed feedback fiber laser based on equivalentphase shift (a kind of novel distributed feedback optical fiber laser) " based on equivalent phase shift, IEEE Photon.Tech.Lett., 16,2598 (2004); And Chen Xiangfei etc. " distributed feed-back formula optical waveguide laser ", CN200410042789.3).
Concrete structure and λ/4 phase-shift structures based on λ/8 phase shifts of reconstruct-equivalent chirp technology among the present invention are similar, and λ/8 equivalent phase shifts are introduced in the center by changing the sampling period at sampling range.The sampled-grating center ± 15% zone in, it is to take place to change suddenly that a sampling period is arranged, its sampling period is 1.2 to 1.3 times or 0.2 to 0.3 times of primitive period, and that other sampling period keeps is constant; As a sampling period at the Bragg grating center of taking a sample change into 1.25 times or 0.25 times of its raw footage, and other sampling period remains unchanged, and has so just formed equivalent λ/8 phase shifts.(referring to Yidong Huang et.al, " Low-Chirp and External Optical FeedbackResistant Characteristics in λ/8Phase-Shifted Distributed-Feedback Laser Diodes UnderDirect Modulation " (directly transferring the low of λ/8 phase shift distributed feedback laser diodes to warble and exterior light feedback barrier properties), IEEE Journal of Quantum Eletronics, Vol.38, No.11,1479-1484, Nov.2002)
Concrete structure based on the CPM structure of reconstruct-equivalent chirp technology among the present invention is: at whole sampling interval, get the sampling period (for example total hits 1/3 to 1/2) of middle part some, increase its sampling period, promptly enlarge the cycle of each sampling in this zone, under the situation that the overall sampling number in this zone remains unchanged, make overall length increase the individual cycle of 0.5 (or 0.25) (being that length increases by 0.5 (λ/4) or the individual sampling period length in 0.25 (λ/8) than reset condition), originally in λ/4 phase shifts (or λ/8 phase shifts) mean allocation of center arrives each sampling period in this zone than the former resample area of identical sampling number.Change the sampling period in the zone with same procedure, make the half integer multiple cycles such as overall length increase by 1.5,2.5, promptly introduce the heterogeneous CPM of moving structure, and should remain unchanged in zone other sampling periods in addition.Simultaneously, the CPM structure also can realize by the mode that shortens entire length.By this method the isolated phase shift of a script in the center was distributed in each sampling period in this zone, change vertical optical field distribution in the semiconductor laser with this, make that the sharp-pointed energy peak in light field center is weakened, form mild optical field distribution, overcome hole burning effect.If overall length increases half integer multiple sampling period length (for example 1.5,2.5 cycles etc.) than reset condition, promptly introduce the heterogeneous CPM of moving structure, can make optical field distribution vertically present heaving of the sea, it is corresponding further to suppress hole burning.The performance of multiple-wavelength laser is also relevant with material in the semiconductor DFB array, and the present invention generally is applied to the III-V group iii v compound semiconductor material, as GaAlAs/GaAs, InGaAs/InGaP, GaAsP/InGaP, InGaAsP/InP, InGaAsP/GaAsP etc.).Also can be applicable to simultaneously various ternary compounds, quaternary compound semiconductor materials such as II-VI group iii v compound semiconductor material, IV-VI group iii v compound semiconductor material.In addition, the present invention also is applied to mix aluminum semiconductor material (for example AlGaInAs), and being used to make does not have refrigeration, the good semiconductor laser array of temperature characterisitic.
In order to reduce the end face reflection rate to the influence of self-sustained Pulsation Characteristics and the power output that improves the dfb semiconductor laser array, can plate anti-reflection film (AR) at each laser output face, the end face reflection rate behind the plated film is less than 10%; The other end can plate high-reflecting film (HR), and plated film rear end face reflectivity is greater than 80%.
The present invention at the concrete grammar of inscribing laser grating formation array on the wafer is: at first design and make the sampling tessellation based on reconstruct-equivalent chirp technology on reticle, be that each grating sampling pattern is according to reconstruct-equivalent chirp technology design and makes on the reticle, have equivalent λ/4 phase shifts, λ/8 phase shifts, CPM structure or more complicated equivalent phase shift and equivalent chirp structure.The photolithography plate that has like this based on the sampling tessellation of reconstruct-equivalent chirp technology is called the REC reticle, and its schematic diagram as shown in Figure 1.The method of carving grating on wafer is the conventional method of inscribing sampled-grating, as shown in Figure 2, in two steps: the first step, use the holographic exposure technology on photoresist, to form the uniform grating pattern; Second step was carried out common exposure by the REC reticle (photomask) that has the sampling tessellation that equivalent grating pair answers, and the pattern of REC template was copied on the photoresist of wafer; On photoresist, form sampling tessellation, corrode wafer again and on wafer, form corresponding D FB grating pattern.The exposure order in two steps can be exchanged according to technology.The light-shielding pattern of the REC photolithography plate here is based on the sampling tessellation of REC technology.
The invention has the beneficial effects as follows: with reconstruct-equivalent chirp technology, it is the REC technology, be applied in the dfb semiconductor laser array, each laser can adopt the structure of same kind in the array, as λ/4 phase shifts, λ/8 phase shifts and CPM structure, perhaps multiple structure combines, and to improve device performance, reaches different specification requirements.The REC technology had both had the flexibility of electron beam lithography, the advantage cheaply that also has the holographic exposure technology, the manufacture difficulty and the production cost of laser array will be reduced greatly, thereby can support the development of high-performance monolithic integrated electro chip on a large scale, domestic telecommunication laser chip technology is stepped step to a new level, for domestic Distributed Feedback Laser chip manufacturing brings new general layout.
Description of drawings
Fig. 1 has various sampling tessellation photolithography plate schematic diagrames based on reconstruct-equivalent chirp technology (REC technology)
Fig. 2 is based on the sampled-grating carving and writing method schematic diagram of reconstruct-equivalent chirp technology (REC technology)
Fig. 3 is the integrated dfb laser array schematic diagram of the present invention's 4 wavelength monolithics
101. metal n electrode; 102.InP cache layer (substrate); 103. lower waveguide layer; 104. multiple quantum well active layer MQWs; 105. grating layer; 106. last ducting layer; 107. top covering (protective layer); 108. ridge waveguide; 109. ohmic contact layer; 110. metal p electrode; 111. insulating barrier;
Fig. 4 is λ/4 equivalent phase shift sampled-grating schematic diagrames (Fig. 4 a take a sample variation, electron scanning micrograph Fig. 4 b).
Embodiment
The structure of distributed feedback semiconductor laser is that InGaAsP ducting layer, strain InGaAsP Multiple Quantum Well, InGaAsP grating material layer, InGaAsP ducting layer, InP limiting layer and InGaAs ohmic contact layer by extension n type InP resilient coating, non-doping lattice match on n type backing material constitute in turn; The grating of InGaAsP grating material layer is the sampling Bragg grating, is as the equivalent grating that swashs lase; Swash the surface of the equivalent grating of lase and adopt the thick SiO of 200-400nm
2Insulating barrier.
The sampling Bragg grating has a plurality of shadow gratings, and the wavelength interval between the shadow grating is inversely proportional to the effective refractive index of sampling period and semiconductor laser waveguide.Operation wavelength is described below in the 1550nm scope, the integrated dfb laser array (see figure 3) of 4 wavelength monolithics of channel width 50GHz.
Mask plate is made: use common microelectronic technique making to contain the mask plate of the sampling period distribution of the needed sampling Bragg grating of equivalent grating, the sampling period difference of last 4 lasers of mask plate, by channel width 50GHz, excitation wavelength 0.4nm decision at interval, the duty ratio in the cycle of each sampling is 0.5.The sampling period at each laser center will change to produce equivalent phase shift according to concrete structure design on mask plate, change for 0.5 cycle (seeing a figure among Fig. 4) in the sampled-grating center as λ/4 phase shifts, and other sampling periods are constant.
The epitaxial material of device is described below mainly by the MOVPE fabrication techniques: extension n type InP resilient coating (thickness 200nm, doping content about 1.1 * 10 once on n type backing material at first
18Cm
-2), 100nm be altogether unjustifiable doping lattice match InGaAsP ducting layer (lower waveguide layer), strain InGaAsP Multiple Quantum Well (1.52 microns of light wavelength of fluorescence, 7 quantum well: the wide 8nm of trap, 0.5% compressive strain, build wide 10nm, lattice matched materials) and the thick p type lattice match InGaAsP (about 1.1 * 1017cm of doping content of 100nm
-2) last ducting layer.Next the method for sampling mask plate that goes out by designed structure fabrication and holographic interference exposure forms the optical grating construction of 4 required lasers at last ducting layer.After sampled-grating was made, (100nm was thick, and doping content is greater than 1 * 10 by secondary epitaxy growth p-InP and p type InGaAs again
19Cm
-2), etching forms ridge waveguide and contact layer, and ridge waveguide length is 400 microns, and ridge is wide 3 microns, and the ridge lateral sulcus is wide 20 microns, dark 1.5 microns.SiO will be filled by plasma-enhanced chemical vapor deposition method (PECVD) around the ridged again
2Or organic substance BCB forms insulating barrier.Plate Ti-Au metal P electrode at last.
The device both ends of the surface can plate anti-reflection film (AR) and high-reflecting film (HR) respectively.The threshold current representative value of laser is that side mode suppression ratio reaches more than the 40dB about 10mA.
Claims (8)
1. the manufacture method of single-slice integrated semiconductor laser array, it is characterized in that each the laser DFB optical grating construction in laser array adopts the sampling Bragg-grating structure, grating in the array in each dfb semiconductor laser waveguide is the sampling Bragg grating, and the sampling Bragg grating contains the equivalent grating of corresponding common Bragg grating; The excitation wavelength of dfb semiconductor laser is done in the dedicated bandwidth at equivalent grating of this sampling Bragg grating, by the sampling period decision of the sampling structure of sampling Bragg grating, changes the sampling period and just can change excitation wavelength.The mask plate of various sampling tessellations is carved with in use, increases or reduce the sampling period, make the Distributed Feedback Laser excitation wavelength near or away from centre wavelength, realizes that different wavelength is sharp to penetrate, realize multichannel multi-wavelength laser array;
Equivalent grating is by reconstruct-equivalent chirp technology design and making in each Distributed Feedback Laser in the laser array, equivalence in the grating warble and phase shift is designed and is made by equivalent chirp and equivalent phase shift method respectively, promptly equivalent grating contains one or more equivalent phase shifts or equivalent chirp; The sampling period of sampling Bragg grating is generally less than 20 microns, greater than 1 micron, the sampling Bragg grating that contains equivalent grating is made by the method that sampling mask plate photoetching and holographic interference expose, the photoetching of sampling mask plate is used for producing equivalent chirp and equivalent phase shift in equivalent grating, and the holographic interference exposure is used for making basic Bragg-grating structure, forms the basic optical feedback mechanism;
Sampling Bragg-grating structure in the described laser array in each laser prepares with following method: preparation earlier contains the mask lithography version plate that the needed sampling period of equivalent grating distributes, the sampling period of mask lithography version plate is generally 1 to 20 micron, the excitation wavelength of the sampling period of different mask plates by the laser of preparation decides, the duty ratio in the cycle of each sampling (that is: having grating partly to account for the length ratio in whole sampling period) is generally 0.4 to 0.6, is determined by the etching error in the concrete manufacture craft; Method by sampling mask plate photoetching and holographic interference exposure is produced the sampling Bragg-grating structure.
The excitation wavelength difference of the dfb semiconductor laser on the array, the excitation wavelength of laser are by the central bragg wavelengths decision of equivalent grating, and promptly the sampling period by the sampling Bragg grating determines.Change the sampling period of sampling Bragg grating sampling structure, the also corresponding change of the sampling tessellation that is carved with on the mask plate, the different sampling tessellations of each laser sampling Bragg grating are sequentially arranged on the mask plate, on array, formed the laser of the different excitation wavelengths that are arranged in order like this, form the multichannel array, send the laser of multi-wavelength, the multichannel number is determined by the laser number, channel spacing is swashed the adjacent spaces width decision of radio frequency rate by difference, be generally 10G～400G scope, promptly excitation wavelength is at interval generally 10
-1Nm～10nm scope.
2. the manufacture method of single-slice integrated semiconductor laser array according to claim 1 is characterized in that the DFB grating pattern divides two steps: the first step, and use the holographic exposure technology on photoresist, to form the uniform grating pattern; Second step was carried out common exposure by the REC reticle (photomask) that has the sampling tessellation that equivalent grating pair answers, and the pattern of REC template was copied on the photoresist of wafer; Or exchange above-mentioned two steps, after forming sampling tessellation on the photoresist, corrode wafer again and on wafer, form corresponding D FB grating pattern.
3. the manufacture method of single-slice integrated semiconductor laser array according to claim 1 and 2, it is characterized in that the sampling Bragg-grating structure in each laser prepares with following method in the described laser array: preparation earlier contains the mask lithography version plate that the needed sampling period of equivalent grating distributes, the sampling period of mask lithography version plate is generally 1 to 20 micron, the excitation wavelength of the sampling period of different mask plates by the laser of preparation decides, and the duty ratio in the cycle of each sampling is generally 0.4 to 0.6; Method by sampling mask plate photoetching and holographic interference exposure is produced the sampling Bragg-grating structure.
4. single-slice integrated semiconductor laser array, the structure of distributed feedback semiconductor laser is that InGaAsP ducting layer, strain InGaAsP Multiple Quantum Well, InGaAsP grating material layer, InGaAsP ducting layer, InP limiting layer and InGaAs ohmic contact layer by extension n type InP resilient coating, non-doping lattice match on n type backing material constitute in turn; The grating of InGaAsP grating material layer is the sampling Bragg grating, is as the equivalent optical grating constitution laser array that swashs lase; Swash the surface of the equivalent grating of lase and adopt the thick SiO of 200-400nm
2Insulating barrier; It is characterized in that each the laser DFB optical grating construction in the laser array adopts the sampling Bragg-grating structure, the grating that is each dfb semiconductor laser in the array is the sampling Bragg grating, and the sampling Bragg grating contains the equivalent grating of corresponding common Bragg grating; The excitation wavelength of dfb semiconductor laser is done in the dedicated bandwidth at the equivalent grating of this sampling Bragg grating, and by the sampling period decision of sampling structure, the change sampling period just can change excitation wavelength; The mask plate of various sampling tessellations is carved with in use, increases or reduce the sampling period, make the Distributed Feedback Laser excitation wavelength near or away from centre wavelength, just can realize that different wavelength is sharp to penetrate, realize multichannel multi-wavelength laser array.
5. single-slice integrated semiconductor laser array according to claim 4, it is characterized in that λ/4 phase shifted laser structures are: in sampling Bragg grating center ± 15% zone, there is a sampling period to take place to change suddenly, cycle after the variation is 1.4 to 1.6 times or 0.4 to 0.6 times of primitive period, and the maintenance of other sampling period is constant; Or a sampling period at sampling Bragg grating center change into 1.5 times or 0.5 times of its former length, and other sampling period remains unchanged, and makes the odd level reflection peak of sampled-grating that equivalent λ/4 phase shifts take place.
6. single-slice integrated semiconductor laser array according to claim 4, it is characterized in that λ/8 phase shifted laser structures are: in the position in sampling Bragg grating center ± 15% zone, it is to take place to change suddenly that a sampling period is arranged, its sampling period is 1.2 to 1.3 times or 0.2 to 0.3 times of primitive period, and the maintenance of other sampling period is constant; As a sampling period at the Bragg grating center of taking a sample change into 1.25 times or 0.25 times of its raw footage, and other sampling period remains unchanged, and has so just formed equivalent λ/8 phase shifts.
7. single-slice integrated semiconductor laser array according to claim 4, the concrete structure that it is characterized in that CPM structure laser is: at whole sampled-grating sampling interval, get the sampling period (for example 1/3 to 1/2 of total hits) of sampled-grating middle part some, increase its sampling period, promptly enlarge the cycle of each sampling in this zone, under the situation that the overall sampling number in this zone remains unchanged, make overall length increase the individual cycle of 0.5 (or 0.25) (being that length increases by 0.5 (λ/4) or the individual sampling period length in 0.25 (λ/8) than reset condition), originally in λ/4 phase shifts (or λ/8 phase shifts) mean allocation of center arrives each sampling period in this zone than the former resample area of identical sampling number.Change the sampling period in the zone with same procedure, make the half integer multiple cycles such as overall length increase by 1.5,2.5, promptly introduce the heterogeneous CPM of moving structure, and should remain unchanged in zone other sampling periods in addition.
8. single-slice integrated semiconductor laser array according to claim 4 is characterized in that the concrete structure of CPM structure laser is: the CPM structure also can realize by the mode that shortens entire length; By this method the isolated phase shift of a script in the center was distributed in each sampling period in this zone, change vertical optical field distribution in the semiconductor laser with this, make that the sharp-pointed energy peak in light field center is weakened, form mild optical field distribution, overcome hole burning effect.If overall length increases half integer multiple sampling period length (for example 1.5,2.5 cycles etc.) than reset condition, promptly introduce the heterogeneous CPM of moving structure, can make optical field distribution vertically present heaving of the sea, it is corresponding further to suppress hole burning.
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