CN109830891B - Narrow linewidth semiconductor laser - Google Patents
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- CN109830891B CN109830891B CN201910186249.9A CN201910186249A CN109830891B CN 109830891 B CN109830891 B CN 109830891B CN 201910186249 A CN201910186249 A CN 201910186249A CN 109830891 B CN109830891 B CN 109830891B
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Abstract
The application discloses narrow linewidth semiconductor laser has solved prior art and has adopted longer long cavity structure to lead to the problem that the propagation loss of light in the waveguide increases in order to realize the narrow linewidth in the waveguide. A narrow linewidth semiconductor laser comprising: a semiconductor light source, a passive filter; the passive filter comprises a waveguide grating coupler and a Bragg grating reflector. The semiconductor light source is used for being connected with the passive filter. The waveguide grating coupler is used for radiating the received light emitted by the semiconductor light source to the Bragg grating reflector and sending the reflected light of the Bragg grating reflector back to the semiconductor light source; the narrow linewidth semiconductor laser can not only abandon a long cavity design to realize low loss through a design mode of filtering feedback and a three-dimensional space structure, but also can be conveniently integrated by the silicon substrate and the excellent space structure, so that large-scale photonic integration can be realized.
Description
Technical Field
The present application relates to the field of optoelectronics, and more particularly to narrow linewidth semiconductor lasers.
Background
In recent years, silicon photonics has received great attention from society due to its low cost, low power consumption, and small size. With the development of 5G mobile access, big data, artificial intelligence and other emerging information technologies and industries, the bandwidth requirement of data communication on optical interconnection is increased rapidly. The optical communication network is used as a backbone support network, the bandwidth pressure of the optical communication network is higher and higher, and the performance requirements on the optical network and devices are higher and higher. Photonic integrated chips/optoelectronic integrated chips are key to address the huge communication capacity and high speed transmission. Currently, a hybrid integrated silicon-based dual-ring narrow-linewidth laser directly interfaced with an SOA (Semiconductor Optical Amplifier) has been reported on the market.
However, in order to realize a narrow linewidth in the hybrid integrated silicon-based dual ring laser, a long cavity structure is generally adopted. Considering that the propagation loss of light in a silicon waveguide is 2.4dB/cm, a long passive waveguide will introduce more loss in the optical path. Therefore, it is necessary to invent a narrow linewidth semiconductor laser with easy integration and low loss.
Disclosure of Invention
The application provides a narrow linewidth semiconductor laser, has solved prior art and has adopted longer long cavity structure to lead to the problem that the propagation loss of light in the waveguide increases in order to realize the narrow linewidth in the waveguide.
The embodiment of the application provides a narrow linewidth semiconductor laser, contains: semiconductor light source, passive filter.
The passive filter comprises a waveguide grating coupler and a Bragg grating reflector.
The semiconductor light source is connected with the passive filter.
The waveguide grating coupler is used for radiating the received light emitted by the semiconductor light source to the Bragg grating reflector and sending the reflected light of the passive optical grating reflector back to the semiconductor light source.
Further, the narrow linewidth semiconductor laser also comprises a spot size converter.
The spot size converter is used for aligning and coupling the semiconductor light source and the passive filter.
Further, the semiconductor light source is bonded on a silicon substrate.
Furthermore, two side walls of the waveguide grating coupler respectively comprise a first side wall grating and a second side wall grating. The bragg grating reflector comprises: the first Bragg grating reflector and the second Bragg grating reflector. The first bragg grating reflector and the second bragg grating reflector are aligned with the first sidewall grating and the second sidewall grating, respectively.
Preferably, the passive filter is implemented with a silicon-based waveguide; the narrow linewidth semiconductor laser is monolithically integrated.
Or, the passive filter is implemented by a silicon nitride material; the passive filter and the semiconductor light source realize hybrid integration through optical coupling.
Preferably, the passive grating region of the bragg grating reflector employs a common grating.
Or, the passive optical grating area of the Bragg grating reflector adopts a sampling grating.
Further, the narrow linewidth semiconductor laser has an adjustable waveband.
The embodiment of the application adopts at least one technical scheme which can achieve the following beneficial effects:
the semiconductor light source and the waveguide are directly bonded or adhered, so that the coupling efficiency is high and the transmission loss is small. The narrow linewidth semiconductor laser is very easy to adjust, design and integrate in three-dimensional space through a filter feedback and three-dimensional space structure design mode, a long cavity design can be abandoned to achieve low loss, and the narrow linewidth semiconductor laser can be conveniently integrated through a silicon substrate and a good space structure, so that large-scale photonic integration can be achieved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a diagram of a narrow linewidth semiconductor laser structure;
FIG. 2 is a schematic diagram of a passive filter in a narrow linewidth semiconductor laser;
FIG. 3 is a diagram of a generic grating structure of a Bragg grating reflector;
fig. 4 is a sampled grating structure diagram of a bragg grating reflector.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The technical solutions provided by the embodiments of the present application are described in detail below with reference to the accompanying drawings.
Fig. 1 is a structural view of a narrow-linewidth semiconductor laser.
A narrow linewidth semiconductor laser comprising: semiconductor light source 1, passive filter 3.
The passive filter comprises a waveguide grating coupler 31 and a Bragg grating reflector 32.
The semiconductor light source is connected with the passive filter.
The semiconductor light source is, for example, a semiconductor laser chip, which is a device that actually generates light. The semiconductor light source generates laser with a preset wavelength and transmits the laser with the preset wavelength as incident light to the passive filter.
For another example, the semiconductor light source used by the narrow linewidth semiconductor laser may be a III-V group compound semiconductor material, a II-VI group compound semiconductor material (such as GaAlAs/GaAs, InGaAs/InGaP, GaAsP/InGaP, InGaAsP/InP, InGaAsP/GaAsP, AlGaInAs, etc.), or various ternary and quaternary compound semiconductor materials such as a IV-VI group compound semiconductor material.
The waveguide grating coupler is used for radiating the received light emitted by the semiconductor light source to the Bragg grating reflector and sending the reflected light of the Bragg grating reflector back to the semiconductor light source.
For example, the general laser generated by the semiconductor light source (InP semiconductor laser) enters the waveguide through aligned coupling, and then continues to be transmitted, and is laterally coupled into the bragg grating reflector when passing through the waveguide grating coupler (sidewall grating), and the laser is compressed in line width and reflected by the bragg grating reflector to return along the original path, and finally returns to the semiconductor light source (InP semiconductor laser) and exits from the other end.
Further, the narrow linewidth semiconductor laser further includes a spot-size converter 2.
The spot size converter is used for aligning and coupling the semiconductor light source and the passive filter.
Further, the semiconductor light source is bonded on a silicon substrate.
The semiconductor light source can be bonded with the waveguide material through molecular force, and can also be bonded with the waveguide material through polymer glue.
For example, the narrow-linewidth semiconductor laser integrates a semiconductor light source on a silicon substrate through a process, the semiconductor and the silicon substrate can directly bond the semiconductor light source and the silicon substrate together by using intermolecular force, and the semiconductor light source and the silicon substrate can also be bonded together by using a special bonding medium, such as epoxy resin, benzocyclobutene (BCB), polymethyl methacrylate (PMMA), and the like.
Preferably, the passive filter is implemented with a silicon-based waveguide; the narrow linewidth semiconductor laser is monolithically integrated.
For example, when the semiconductor light source is bonded or glued together with a silicon base in which the passive filter is implemented, the device is monolithically integrated.
Or, the passive filter is implemented by a silicon nitride material; the passive filter and the semiconductor light source realize hybrid integration through optical coupling.
For example, the narrow linewidth semiconductor laser may be implemented by a silicon-based waveguide, a silicon nitride-based waveguide, or other material waveguides.
For example, when the semiconductor light source is bonded or bonded to a silicon substrate, the passive filter is implemented in silicon nitride, and the semiconductor light source and the passive filter are optically coupled, the device is hybrid integrated.
The semiconductor light source emits laser with specific wavelength, and the laser enters the passive silicon waveguide through the spot size converter and then enters the silicon-based waveguide and the waveguide grating coupler on the silicon-based waveguide. The light is further radiated in a specific direction (generally vertical direction) through the waveguide grating coupler to enter the Bragg grating reflector, the light meeting the reflection condition can be strongly reflected on a narrow band, the reflected light returns along the original path to enter the waveguide grating coupler, and the light is further coupled to enter the spot-size converter and finally enter the semiconductor light source.
In the manufacturing process of the semiconductor light source, the epitaxial material of the semiconductor light source is that firstly, an N-type InP buffer layer (with the thickness of 200nm and the doping concentration of about 1.1 × 10) is epitaxially coated on an N-type substrate material for one time18cm-2) The method comprises the steps of preparing a 100nm thick amorphous doped lattice matching InGaAsP waveguide layer, a strained InGaAsP multiple quantum well layer (optical fluorescence wavelength is 1.52 microns, 7 quantum wells; well width is 8nm, 0.5% compression strain; barrier width is 10nm, lattice matching materials) and a 70nm thick InGaAsP grating material layer, then preparing a mask plate containing sampling period distribution required by equivalent grating by using a common microelectronic process, then preparing a grating structure by using the sampling mask plate and a holographic interference exposure method, and then performing secondary epitaxy on the 100nm thick P type lattice matching InGaAsP waveguide layer (the doping concentration is about 1.1 × 10)17cm-2DFB section the layer thickness is 100nm), 1.7 micron thick P-type InP confinement layer (doping concentration is from 3.5 × 1017cm-2Gradual change is 1 × 1018cm-2) And a 100nm thick P-type InGaAsP ohmic contact layer (doping concentration greater than 1 × 10)19cm-2)。
The semiconductor light source can adopt a ridge waveguide structure, the width of the waveguide is 2 microns, the width of the grooves on two sides of the waveguide is 20 microns, and the depth of the grooves is 1.8 microns. In the process of manufacturing the ridge waveguide, an electrical isolation groove is manufactured together, namely the InGaAsP ohmic contact layer of the electrical isolation groove region is connected with the InGaAsP ohmic contact layerEtching off the InGaAs buffer layer on the InP ridge waveguide layer, and covering the surface with SiO with the thickness of 300nm2An insulating layer. Then SiO on the ridge waveguide2The material is etched away and a P-type electrode on the front side of the laser is fabricated. And thinning the laser substrate, and manufacturing an N-type electrode on the back surface after polishing.
And then, mutually bonding the whole semiconductor light source serving as the light source and a silicon substrate by using a special bonding medium (epoxy resin, benzocyclobutene (BCB), polymethyl methacrylate (PMMA) and the like) to realize the integration of the semiconductor laser and the silicon substrate, or directly bonding and integrating the semiconductor light source and the silicon substrate by using molecular force. And anti-reflection films are plated at two ends of the device, and the reflectivity after film plating is less than 1%.
Further, the narrow linewidth semiconductor laser has an adjustable waveband.
For example, the narrow linewidth semiconductor laser may use various wavebands, which may use 1310 waveband, 1550 waveband, and 1650 waveband. The adapted wavelength band is changed by designing the semiconductor light source and/or adjusting the grating structure of the bragg grating reflector.
Fig. 2 is a schematic diagram of the operation of a passive filter in a narrow linewidth semiconductor laser.
Further, two sidewalls of the waveguide-grating coupler respectively include a first sidewall grating 311 and a second sidewall grating 312.
The bragg grating reflector comprises: a first bragg-grating reflector 321 and a second bragg-grating reflector 322.
The first bragg grating reflector and the second bragg grating reflector are aligned with the first sidewall grating and the second sidewall grating, respectively.
The waveguide-grating coupler radiates light out of the waveguide and propagates to the bragg-grating reflectors on both sides. The light meeting the reflection condition is further reflected back and enters the waveguide through the waveguide grating coupler, so that narrow-band reflection is realized. And returned to the spot converter.
Fig. 3 is a general grating structure diagram of a bragg grating reflector.
Preferably, the passive grating region of the bragg grating reflector employs a common grating 41.
The Bragg wavelength calculation formula of the common grating is as follows:
λbragg＝2neffΛ equation 1
Wherein λbraggIs the Bragg wavelength, n, of a passive filtereffΛ is the grating period of the Bragg grating reflector, which is the effective index of refraction of the grating.
The common grating structure of the Bragg reflection filter can be realized by electron beam exposure, ultraviolet exposure and complete system exposure.
For example, a uniform bragg grating is produced by means of electron beam exposure: firstly, coating a layer of uniform electron beam exposure glue, which is usually PMMA (polymethyl methacrylate), on a corresponding part of a waveguide, then using an electron beam exposure technology to scan an electron beam on the exposure glue and form a required pattern of a Bragg grating by changing the exposure of the electron beam, then using an organic solvent to dissolve the PMMA with less exposure, and then using ICP (inductively coupled plasma) dry etching or wet etching based on chemical reaction to etch the material, thereby obtaining the required pattern.
The Bragg reflection filter adopts a common grating structure, is simple to manufacture compared with a sampling grating structure, and only needs to be exposed.
Fig. 4 is a sampled grating structure diagram of a bragg grating reflector.
Preferably, the passive grating region of the bragg grating reflector employs a sampled grating 42.
The equivalent grating calculation formula of the sampling grating is as follows:
Λ therein0Is the period of the seed grating of the passive filter, P is the sampling period of the grating, Λ+1Is an equivalent grating periodAnd (4) period.
For example, a sampled grating structure of a bragg grating reflector is manufactured by one holographic exposure and one sampling.
For example, a sampling pattern is designed and made on a reticle (reticle), then a holographic exposure technique is used to form a uniform grating pattern on a photoresist, then a reticle with the sampling pattern is used to perform a common exposure, the pattern of the reticle is copied onto a wafer photoresist, i.e. a sampling pattern is formed on the photoresist, and then the wafer is etched to form a corresponding grating pattern on the wafer. The two-step exposure sequence can be interchanged depending on the process.
The passive optical grating area of the Bragg grating reflector adopts a sampling grating, and compared with a common grating, the sampling grating can obtain narrow-bandwidth laser with narrower bandwidth.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (8)
1. A narrow linewidth semiconductor laser, comprising: a semiconductor light source, a passive filter;
the passive filter comprises a waveguide grating coupler and a Bragg grating reflector;
the semiconductor light source is connected with the passive filter;
the waveguide grating coupler is used for radiating the received light emitted by the semiconductor light source to the Bragg grating reflector and sending the reflected light of the Bragg grating reflector back to the semiconductor light source; the two side walls of the waveguide grating coupler respectively comprise a first side wall grating and a second side wall grating;
the bragg grating reflector comprises: a first Bragg grating reflector and a second Bragg grating reflector;
the first bragg grating reflector and the second bragg grating reflector are aligned with the first sidewall grating and the second sidewall grating, respectively.
2. The narrow linewidth semiconductor laser of claim 1,
the narrow linewidth semiconductor laser also comprises a spot size converter;
the spot size converter is used for aligning and coupling the semiconductor light source and the passive filter.
3. The narrow linewidth semiconductor laser of claim 1, wherein the semiconductor light source is bonded on a silicon substrate.
4. The narrow linewidth semiconductor laser of claim 3, wherein the passive filter is implemented with a silicon-based waveguide; the narrow linewidth semiconductor laser is monolithically integrated.
5. The narrow linewidth semiconductor laser of claim 3, wherein the passive filter is implemented in a silicon nitride material; the passive filter and the semiconductor light source realize hybrid integration through optical coupling.
6. A narrow linewidth semiconductor laser as claimed in any one of claims 1 to 5 wherein the passive grating region of the Bragg grating reflector is a common grating.
7. A narrow linewidth semiconductor laser as claimed in any one of claims 1 to 5 wherein the passive grating region of the Bragg grating reflector employs a sampled grating.
8. A narrow linewidth semiconductor laser as claimed in any one of claims 1 to 5 wherein the wavebands of the narrow linewidth semiconductor laser are tunable.
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| CN112038888B (en) * | 2020-08-05 | 2021-10-26 | 南京大学 | Semiconductor laser of integrated waveguide grating modulator |
| CN114199809B (en) * | 2021-11-23 | 2024-02-09 | 南京大学 | Monolithic integrated infrared laser gas detection device |
| CN116995526B (en) * | 2023-08-08 | 2024-04-09 | 芯联新(河北雄安)科技有限公司 | Space coupling narrow linewidth semiconductor external cavity laser |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0325251A2 (en) * | 1988-01-20 | 1989-07-26 | Canon Kabushiki Kaisha | Laser light source for generating beam collimated in at least one direction |
| US5164956A (en) * | 1991-10-21 | 1992-11-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Multiperiod-grating surface-emitting lasers |
| US6495384B1 (en) * | 1998-10-29 | 2002-12-17 | Nec Corporation | Method for manufacturing diffraction grating and method for manufacturing semiconductor laser |
| WO2004077629A1 (en) * | 2003-02-21 | 2004-09-10 | Bogie Boscha | Devices and methods for optoelectronics |
| JP2007243019A (en) * | 2006-03-10 | 2007-09-20 | Fujitsu Ltd | Optical semiconductor element |
| CN101369718A (en) * | 2008-10-06 | 2009-02-18 | 南京大学 | Production method and apparatus for single-slice integrated semiconductor laser array |
| EP2636110A1 (en) * | 2010-11-02 | 2013-09-11 | Onechip Photonics Inc. | Vertically-coupled surface-etched grating dfb laser |
| US8885678B1 (en) * | 2012-05-24 | 2014-11-11 | Redfern Integrated Optics, Inc. | Ultra-low frequency noise external cavity semiconductor laser with integrated waveguide grating and modulation section electronically stabilized by dual frequency feedback control circuitry |
| CN105305227A (en) * | 2015-11-20 | 2016-02-03 | 浙江大学 | Silicon-substrate heterogeneous-integrated tunable laser based on coupler |
-
2019
- 2019-03-12 CN CN201910186249.9A patent/CN109830891B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0325251A2 (en) * | 1988-01-20 | 1989-07-26 | Canon Kabushiki Kaisha | Laser light source for generating beam collimated in at least one direction |
| US5164956A (en) * | 1991-10-21 | 1992-11-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Multiperiod-grating surface-emitting lasers |
| US6495384B1 (en) * | 1998-10-29 | 2002-12-17 | Nec Corporation | Method for manufacturing diffraction grating and method for manufacturing semiconductor laser |
| WO2004077629A1 (en) * | 2003-02-21 | 2004-09-10 | Bogie Boscha | Devices and methods for optoelectronics |
| JP2007243019A (en) * | 2006-03-10 | 2007-09-20 | Fujitsu Ltd | Optical semiconductor element |
| CN101369718A (en) * | 2008-10-06 | 2009-02-18 | 南京大学 | Production method and apparatus for single-slice integrated semiconductor laser array |
| EP2636110A1 (en) * | 2010-11-02 | 2013-09-11 | Onechip Photonics Inc. | Vertically-coupled surface-etched grating dfb laser |
| US8885678B1 (en) * | 2012-05-24 | 2014-11-11 | Redfern Integrated Optics, Inc. | Ultra-low frequency noise external cavity semiconductor laser with integrated waveguide grating and modulation section electronically stabilized by dual frequency feedback control circuitry |
| CN105305227A (en) * | 2015-11-20 | 2016-02-03 | 浙江大学 | Silicon-substrate heterogeneous-integrated tunable laser based on coupler |
Non-Patent Citations (3)
| Title |
|---|
| An integrated silicon Bragg grating filter without circulator;Rulei Xiao 等;《OFC 2018 OSA 2018》;20181231;全文 * |
| Nonlinear Distortion Suppression in a Hybrid Integrated Dual-Parallel Modulated DFB Laser;Yunshan Zhang 等;《Asia Communications and Photonics Conference (ACP) OSA 2017》;20171231;全文 * |
| Novel Linewidth Narrowing Scheme of DFB Lasers Based on Integrated Mutual Injection Locking;Weichao Ma 等;《Asia Communications and Photonics Conference (ACP) OSA 2017》;20171231;全文 * |
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