CN113257687A - Method for covering cladding of micro-nano structure of semiconductor - Google Patents
Method for covering cladding of micro-nano structure of semiconductor Download PDFInfo
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- CN113257687A CN113257687A CN202110513623.9A CN202110513623A CN113257687A CN 113257687 A CN113257687 A CN 113257687A CN 202110513623 A CN202110513623 A CN 202110513623A CN 113257687 A CN113257687 A CN 113257687A
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- nano structure
- cladding
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 60
- 238000005253 cladding Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 56
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 4
- 239000002861 polymer material Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000007711 solidification Methods 0.000 abstract description 2
- 230000008023 solidification Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 230000002925 chemical effect Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003075 superhydrophobic effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, and discloses a method for covering a cladding layer of a micro-nano structure of a semiconductor, which comprises the following steps: the method comprises the following steps: coating a layer of photoresist on the micro-nano structure; step two: and exposing the photoresist. The photoresist adopts HSQ photoresist of inorganic photoresist. The coating method comprises the steps of coating a layer of photoresist on a micro-nano structure and exposing to form a cladding, wherein the photoresist is used as an anti-corrosion coating material, so that the micro-nano structure is protected, the photoresist is a high polymer material with photosensitive chemical action (or sensitive to electronic energy), and the photoresist has good fluidity and uniformity due to the characteristic of small surface tension, can be uniformly coated on the surface of the micro-nano structure, and can make the surface of the formed cladding smooth after exposure and solidification.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for covering a cladding layer of a micro-nano structure of a semiconductor.
Background
After decades of development, micro-nano structures have been widely applied in many fields. In recent years, semiconductor micro-nano materials have been widely researched and applied to solve environmental and energy problems due to good characteristics of the materials. In the field of semiconductor manufacturing, in order to maintain the structural characteristics of the micro-nano structure, after the micro-nano structure is processed, a coating layer covers the micro-nano structure for protection. The cladding of the existing micro-nano structure is usually manufactured by deposition and other methods, the problem of uneven surface exists, redundant structures similar to gratings are formed on the surface, and the performance of a semiconductor is influenced.
The chinese invention patent application CN108515000A (published as 2018, 09 and 11) discloses a method for preparing a super-hydrophobic film, which comprises: forming a polysilicon micro-nano structure array layer on a substrate; forming an inorganic micro-nano structure array layer on the polycrystalline silicon micro-nano structure array layer; and performing surface hydrophobization treatment on the inorganic micro-nano structure array layer to prepare the super-hydrophobic film. The inorganic substance micro-nano structure array layer can be a silicon dioxide micro-nano structure array layer, and a silicon dioxide micro-nano structure array layer with a second thickness is deposited on the polycrystalline silicon micro-nano structure array layer. Therefore, the inorganic micro-nano structure array layer is constructed in a deposition mode, and due to the fact that the ionization process exists in deposition, more particles are generated, the cladding is uneven, a structure similar to a grating except the micro-nano structure is formed, and the performance of a semiconductor is affected.
Disclosure of Invention
The invention aims to provide a method for covering a micro-nano structure cladding of a semiconductor with a smooth surface.
In order to achieve the purpose, the invention provides a method for covering a semiconductor micro-nano structure cladding, which comprises the following steps:
the method comprises the following steps: coating a layer of photoresist on the micro-nano structure;
step two: and exposing the photoresist.
Preferably, the photoresist is an inorganic photoresist.
Preferably, the photoresist is an HSQ photoresist.
Preferably, in the first step, the photoresist is coated on the micro-nano structure by spin coating.
Preferably, in the second step, the photoresist is baked before exposure.
As a preferred scheme, the drying temperature is 70-100 ℃.
Preferably, the drying temperature is 90 ℃.
Preferably, the drying time is 5 minutes.
As a preferred scheme, drying is carried out by adopting a drying plate.
Preferably, in step two, the photoresist is exposed by EBL.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, a layer of photoresist is coated on the micro-nano structure and exposed to form a cladding, the photoresist is used as an anti-corrosion coating material, so that the micro-nano structure is protected, the photoresist is a high polymer material with photosensitive chemical action (or sensitive to electronic energy), and the photoresist has good fluidity and uniformity due to the characteristic of relatively small surface tension, can be uniformly coated on the surface of the micro-nano structure, and can make the surface of the formed cladding smooth after exposure and solidification.
Drawings
Fig. 1 is a flowchart of a cladding covering method for a micro-nano structure of a semiconductor according to an embodiment of the present invention.
FIG. 2 is an SEM image of a coating of micro-nano structure with silicon dioxide grown by CVD deposition.
Fig. 3 is an SEM image of a coating layer made of silica grown on a micro-nano structure by using the method of the embodiment of the present invention.
In the figure, 1-micro nano structure.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1, a method for covering a semiconductor micro-nano structure cladding layer according to a preferred embodiment of the present invention includes the following steps:
the method comprises the following steps: coating a layer of photoresist on the micro-nano structure 1;
step two: and exposing the photoresist.
In the embodiment, a layer of photoresist is coated on the micro-nano structure 1 and exposed to form a cladding, and the photoresist is used as an anti-corrosion coating material, so that the micro-nano structure 1 is protected, the photoresist is a high polymer material with a photosensitive chemical effect (or sensitive to electronic energy), and the photoresist has good fluidity and uniformity due to the characteristic of relatively small surface tension, can be uniformly coated on the surface of the micro-nano structure 1, and can make the surface of the formed cladding smooth after exposure and curing.
In the present embodiment, the photoresist is an inorganic photoresist. Organic photoresist can generate organic matters after exposure, so that the surface of the formed cladding is smooth without the cladding formed by negative photoresist, and the refractive index and the transmittance of the cladding formed by adopting inorganic photoresist are better. Further, the photoresist of this embodiment is an HSQ photoresist (H-SiQ, ultra-high resolution electron beam negative resist), which is composed of Hydrogen Silicate (HSQ) resin in methyl isobutyl ketone (MIBK) belt solvent, and becomes amorphous silicon dioxide after exposure, and the silicon dioxide is an insulating material and has stable chemical properties, so that the cladding layer becomes a good isolation belt, passivation layer, insulating layer and protective layer.
In the first step of the present embodiment, a photoresist is coated on the micro-nano structure 1 by spin coating. The micro-nano structure is placed on a glue throwing platform, the glue throwing platform rotates, and glue dripping can be uniformly coated on the micro-nano structure under the action of centrifugal force. Further, in the second step, before exposure, the photoresist is dried, so that the solvent in the photoresist can be removed, the adhesiveness of the photoresist can be enhanced, the internal stress generated by rotary gluing can be released, the line width control can be improved, the photoresist can be prevented from being adhered to other devices, and the adhesive film can be dried to enhance the adhesiveness between the adhesive film and the surface of the substrate and the wear resistance of the adhesive film. The drying temperature is 70-100 ℃. The drying temperature of this example was 90 ℃ and the drying time was 5 minutes. In addition, this embodiment adopts the baking plate to dry, can guarantee to dry evenly.
In addition, in the second step, the photoresist is exposed by EBL (electron beam lithography, EBL, also called as electron beam exposure system), which can avoid the trouble of diffraction effect, and has the observation function of the original SEM, and the formed cladding can be observed to check the quality of the cladding.
The cladding formed by adopting the steps is shown in fig. 3, and the cladding formed by growing silica on the micro-nano structure by using the conventional CVD deposition method is shown in fig. 2.
In summary, an embodiment of the present invention provides a cladding covering method for a micro-nano structure of a semiconductor, which forms a cladding after a layer of photoresist is coated on the micro-nano structure and exposed, wherein the photoresist is used as an anti-corrosion coating material, so that the cladding has a protection effect on the micro-nano structure, the photoresist is a high molecular polymer material having a photosensitive chemical effect (or sensitive to electronic energy), and the photoresist has a characteristic of relatively small surface tension, so that the photoresist has good fluidity and uniformity, can be uniformly coated on the surface of the micro-nano structure, and can make the surface of the formed cladding smooth after exposure and curing.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for covering a semiconductor micro-nano structure cladding is characterized by comprising the following steps:
the method comprises the following steps: coating a layer of photoresist on the micro-nano structure (1);
step two: and exposing the photoresist.
2. The method for covering the cladding layer of the micro-nano structure of the semiconductor according to claim 1, wherein the photoresist is an inorganic photoresist.
3. The method for covering the semiconductor micro-nano structure cladding layer according to claim 2, wherein the photoresist is HSQ photoresist.
4. The method for covering the coating of the micro-nano structure according to claim 1, wherein in the first step, photoresist is coated on the micro-nano structure by spin coating.
5. The method for covering the cladding layer with the micro-nano structure according to claim 1, wherein in the second step, the photoresist is dried before exposure.
6. The method for covering the micro-nano structure cladding according to claim 5, wherein the drying temperature is 70-100 ℃.
7. The method for covering the micro-nano structure cladding according to claim 6, wherein the drying temperature is 90 ℃.
8. The method for covering the micro-nano structure cladding according to claim 7, wherein the drying time is 5 minutes.
9. The method for covering the micro-nano structure cladding according to claim 5, wherein drying is performed by using a drying plate.
10. The method for covering the micro-nano structure cladding according to claim 1, wherein in the second step, photoresist is exposed by EBL.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110513623.9A CN113257687A (en) | 2021-05-11 | 2021-05-11 | Method for covering cladding of micro-nano structure of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110513623.9A CN113257687A (en) | 2021-05-11 | 2021-05-11 | Method for covering cladding of micro-nano structure of semiconductor |
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| Publication Number | Publication Date |
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| CN113257687A true CN113257687A (en) | 2021-08-13 |
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| CN202110513623.9A Pending CN113257687A (en) | 2021-05-11 | 2021-05-11 | Method for covering cladding of micro-nano structure of semiconductor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369718A (en) * | 2008-10-06 | 2009-02-18 | 南京大学 | Production method and apparatus for single-slice integrated semiconductor laser array |
| CN104483812A (en) * | 2014-11-29 | 2015-04-01 | 复旦大学 | Method for preparing high-density flat pattern by using thermal development enhanced electron beam photoresist contrast ratio |
| CN107857236A (en) * | 2017-09-29 | 2018-03-30 | 湖南大学 | A kind of preparation method of the high conformal nanoscale minus structure of high-aspect-ratio |
| CN108761641A (en) * | 2018-07-27 | 2018-11-06 | 纤瑟(天津)新材料科技有限公司 | The method for preparing micro-nano structure in fiber end face by micro-nano structure transfer method |
| CN110646639A (en) * | 2019-09-17 | 2020-01-03 | 西安交通大学 | Standard template for calibrating nano measuring instrument and preparation method thereof |
| CN112526830A (en) * | 2020-12-08 | 2021-03-19 | 郑州大学 | Method for eliminating diffraction and interference caused by light passing through photomask |
-
2021
- 2021-05-11 CN CN202110513623.9A patent/CN113257687A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369718A (en) * | 2008-10-06 | 2009-02-18 | 南京大学 | Production method and apparatus for single-slice integrated semiconductor laser array |
| CN104483812A (en) * | 2014-11-29 | 2015-04-01 | 复旦大学 | Method for preparing high-density flat pattern by using thermal development enhanced electron beam photoresist contrast ratio |
| CN107857236A (en) * | 2017-09-29 | 2018-03-30 | 湖南大学 | A kind of preparation method of the high conformal nanoscale minus structure of high-aspect-ratio |
| CN108761641A (en) * | 2018-07-27 | 2018-11-06 | 纤瑟(天津)新材料科技有限公司 | The method for preparing micro-nano structure in fiber end face by micro-nano structure transfer method |
| CN110646639A (en) * | 2019-09-17 | 2020-01-03 | 西安交通大学 | Standard template for calibrating nano measuring instrument and preparation method thereof |
| CN112526830A (en) * | 2020-12-08 | 2021-03-19 | 郑州大学 | Method for eliminating diffraction and interference caused by light passing through photomask |
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Application publication date: 20210813 |
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