CN104638511A - Method and device for realizing low-cost tunable semiconductor laser based on reconstruction-equivalent chirp and series/parallel hybrid integration technologies - Google Patents
Method and device for realizing low-cost tunable semiconductor laser based on reconstruction-equivalent chirp and series/parallel hybrid integration technologies Download PDFInfo
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Abstract
A method and a device for realizing a low-cost tunable semiconductor laser based on a reconstruction-equivalent chirp technology belong to the technical field of optoelectronics, and relate to the design and manufacture of a complex distributed feedback tunable semiconductor laser. The invention aims to provide a low-cost tunable distributed feedback semiconductor laser for the future WDM-PON market by adopting the reconstruction-equivalent chirp technology for low-cost manufacture. The basic technology is that a plurality of distributed feedback semiconductor lasers of different wavelengths are integrated on the same chip through a series/parallel hybrid mode, and a mode of crosstalk isolation between adjacent laser chips is provided. According to the invention, DFB lasers of different working wavelengths based on the reconstruction-equivalent chirp technology are integrated by a series/parallel combination mode, one of the lasers is selected by current to work, and the working wavelength of the laser can be controlled by adjusting the temperature or current, thus realizing continuous tuning of the working wavelength of the laser.
Description
Technical field
The invention belongs to photoelectron technical field, relevant with distributed feedback semiconductor laser, particularly relate to the designing and making of complex distributions feedback semiconductor laser with tunable, more specifically, be method based on the tunable distributed feedback semiconductor laser of low cost of reconstruction-equivalent chirp technology and device.
Background technology
In in the past more than 20 year, the continuous growth pole the earth of global broadband demand facilitates the development of optical fiber communication industry, there has been proposed multiple imagination and the scheme that can increase message capacity, wherein close wavelength-division multiplex technology (DWDM) is a kind of mode of high efficient and flexible, and easily carry out upgrading and transforming on the basis of existing equipment, thus obtain the favor of people and obtain large-scale application.Close wavelength-division multiplex technology the wavelength number of signal transmission can improve system transmission capacity by increasing, such as 80 ~ 100 wavelength signals can be transmitted with same optical fiber afterwards by multiplexing, isolate each signal again after arriving user, thus substantially increase the utilization ratio of equipment.In traditional wavelength-division multiplex system, distributed feed-back (DFB) semiconductor laser is principal light source, and multiple signals need to work simultaneously, and the standard of wavelength interval demand fulfillment International Telecommunication Union (ITU-T) between laser.If adopt the semiconductor laser of fixed wave length, this just means needs for each user is equipped with an independently transceiver module, download the multi-wavelength signals from central office, and then demodulate the signal oneself needed, and in order to ensure that system can work steadily in the long term, also need for the standby of each laser configurations, cause systemic breakdown to prevent because some lasers go wrong, this just substantially increases energy consumption and the maintaining cost of system.Therefore, people wish the tunable laser using wavelength controlled in dwdm system, just only a laser standby can be used like this in a dwdm system, its work can be replaced with this laser when any one laser goes wrong, this just greatly reduces the complexity of dwdm system, also reduces its operating cost simultaneously.
On the other hand, infinitely message capacity can not be increased by increasing wavelength number.In long haul transmission system, need to use fiber amplifier to carry out relaying and amplification to signal, and the working range of the erbium-doped fiber amplifier usually adopted is at 1530nm ~ 1570nm.If the wavelength number used is too many, the crosstalk that will produce between signal because wavelength interval is too little simultaneously.So people need the transmission speed trying every possible means to improve each wavelength signals while increasing wavelength number.Current fiber optic transmission system can reach the transmission speed of 40Gbit/s, and the 100Gbit/s system of more speed, and the coherent optical communication system with more advanced modulation/detection technique is also among fermenting.In such a system, tunable laser not only can as the light source of system, and can as the local oscillation signal source of receiving terminal.
As far back as eighties of last century eighties, people just start the research to tunable laser.Tunable laser mainly contains the filter of a gain region and a Wavelength tunable, is regulated the operation wavelength of filter, thus realize the change of laser wavelength by modes such as temperature, machinery, electric current, electric fields.The structure of tunable laser mainly can be divided into three kinds in the world at present: outer-cavity structure, distributed Blatt reflective (DBR) structure and distributed feed-back (DFB) structure.The laser of these designs can reach the tuning range of 40nm, can meet the requirement of dwdm system, but have pluses and minuses all separately.
Tunable laser performance based on outer-cavity structure is ideal, it can in wider wave-length coverage continuous tuning, there is higher power output, and the live width being less than 100kHz can be obtained, but this kind of laser realizes wavelength regulation by optical feedback, it comprises multiple optics, makes and packaged type is complicated, cost is high, and wavelength regulation mode also comparatively complexity.
Tunable laser based on distributed Blatt reflective structure studies comparatively early also comparatively widely.It can utilize the cursor effect between two reflecting gratings tuning to realize wide range of wavelengths.It unlike outer-cavity structure, need multiple optics realize feedback, therefore encapsulate with regulate relative simple.But with regard to its production method, filtering part due to it is produced in passive wave guide, and the integrated tool in semiconductor processing of active material and passive material acquires a certain degree of difficulty, be difficult to realize extensive industrialization, therefore also limit the development of this kind of laser.In addition, the tunable laser based on dbr structure generally carries out wavelength regulation by electric current, although its governing speed comparatively fast can reach nanosecond order, when Injection Current because the plasma effect that charge carrier causes can make the live width of laser increase.
Based on the tunable laser relative inexpensiveness of distributed feedback structure, because it is a single device, does not need to feed back and do not need to adopt complicated active passive material integration mode yet.But because the refractive index of active material is little with the change of temperature or electric current, therefore its adjustable range is very little, generally can only reach about 3nm.Current DFB tunable laser is generally realized by the mode of array, namely adopts the laser with fixed wavelength that multiple wavelength is different, is exported, and utilize one of them the wavelength work of certain way selection by the mode of coupling.The advantage of this tunable mode is that laser performance is stablized, and there will not be mode hopping, and avoids complicated encapsulation and wavelength regulation mode, more easily realize single-chip integration in wavelength regulation process.This dfb laser array based on parallel way is used in the transmission system of 10Gbit/s usually, tunable laser described in the present invention is relevant therewith, but carry out the single Distributed Feedback Laser of designing and making owing to have employed equivalence-reconstruct chirp technology, its cost reduces greatly, and the invention allows for the mode of series/parallel hybrid integrated.
More specifically, tunable laser based on outer-cavity structure can see Intel (" Automated Optical PackagingTechnology for10Gb/s Transceivers and its Application to a Low-Cost Full C-Band Tunable Transmitter, " Intel Technology Journal.vol.08, 101-114, 2004.) and NEC (" Full C-Band External Cavity Wavelength Tunable Laser Using a Liquid-Crystal-Based Tunable Mirror, " IEEE Phton.Tech.Lett., vol.17, 681-683, 2005.) achievement in research.Tunable laser based on distributed Blatt reflective structure can see SG-DBR structure (" the Tunable Semiconductor Lasers:A Tutorial of JDSU, " J.Lightwave Technol., vol.22, 193-202, 2004.), DS-DBR structure (" the Widely Tunable DS-DBR Laser With Monolithically Integrated SOA:Design and Performance of Oclaro, " IEEE J.Select.Topics Quantum Electron., vol.11, 149-156, 2005.) and the MGY structure (Jan-Olof of Syntune
stefan Hammerfeldt, Jens Buus, Robert Siljan, Reinhard Laroy, and Harry de Vries, " Design of a Widely Tunable Modulated Grating Y-branch Laser using the Additive Vernier Effect for Improved Super-Mode Selection ").Based on distributed feedback structure tunable laser array can see the achievement in research of NEC (" Wavelength-Selectable microarray light sources for S-; C-; and L-band WDM systems; " IEEE Photon.Technol.Lett., vol.15,903-905,2003.), it adopts the DFB semiconductor laser of six 8 arrays to cover whole S, C and L-band.
Except the achievement in research of above Japan and each laboratory of America and Europe and enterprise, China also expands comparatively deep research to tunable laser.What it was representative is the large-scale semiconductor laser with tunable of the low cost based on the V-arrangement coupling cavity scheme (" Simple and compact V-cavity semiconductor laser with50 × 100GHz wavelength tuning " what teach problem group for army building of Zhejiang University proposes, Vol.21, No.11, Optics Express, 2013), it covers whole C-band with 50 channels at 100GHz interval, and this is the domestic outstanding achievement to the research of low cost semiconductor laser with tunable.
From the price of tunable laser, if be used on the main line of optical communication system, although the performance requirement needed is high, such as line width, tuning range is large, and stability is high, life-span is long, but due to the laser number needed few, system is also insensitive to the price of single tunable laser.If but tunable laser is applied in multi-plexing light accessing system, on the EPON (WDM-PON) of such as future development, be directly used in user side, need for each user is equipped with an optical transceiver module, then the consumption of tunable laser will be very large, so just needs price very low.Such optical transceiver module target price is 50 dollars, generally can not more than 100 dollars, and the price of tunable laser on current market is substantially all more than 1000 dollars, if reduced, may regain integrated cost again.Therefore, object of the present invention is exactly want the tunable distributed feedback semiconductor laser of this low cost towards vast WDM-PON market of designing and making.Be applied to the tunable laser of WDM-PON system to the not special requirement of tuned speed, but need tuning range to be greater than 10nm, the 100GHz channel of more than 10 ITU-T can be crossed over.A kind of simple and effective way improving wavelength tuning range is integrated the mode that multiple Distributed Feedback Laser is mixed by series/parallel, and by temperature or electric current, the wavelength to laser regulates.
But, make the different laser not a duck soup of operation wavelength on the same chip.Traditional method adopts electron beam lithography.But because the cost of electron beam lithography is very high, inscription speed slowly, and due to the feature of electron beam itself, its laser array operation wavelength accuracy of working it out is inadequate, have impact on quality or the cost rate of laser array, thus reduce the performance of laser, and add the cost of laser.In order to address this problem, Nanjing University is old " prepares method and the device of semiconductor laser " (CN200610038728.9) to flying to have invented patent in 2006 based on reconstruction-equivalent chirp technology, and has applied for international PCT patent (application number PCT/CN2007/000601).Holographic exposure is adopted to add that the photoetching of common submicron order precision is to make sampling Bragg grating in the method, sampling Bragg grating contains the equivalent grating of corresponding common Bragg grating, the excitation wavelength of distributed feedback semiconductor laser is in the zone of action width of the equivalent grating of sampling Bragg grating, wavelength interval between equivalence grating is inversely proportional to the effective refractive index of sampling period and distributed feedback semiconductor laser, the uniform grating that so just can the cycle be adopted on the same chip unified, then the position of equivalent grating is changed by the different sampling periods, thus the distributed feedback semiconductor laser of different operating wavelength can be realized on the same chip.The laser made by this method and laser array cost very low, and make Bragg grating owing to adopting holographic exposure and common photolithographic exposure, grating then on whole epitaxial wafer can disposablely be write as, substantially reduce the preparing grating time and easily realize large-scale production, thus further reducing integrated cost.Can see Chinese invention patent " manufacture method of single-slice integrated semiconductor laser array and device " (CN200810156592.0) and document about the details of reconstruction-equivalent chirp technology and the performance based on this distributed feedback semiconductor laser made and laser array: Jingsi Li, Huan Wang, Xiangfei Chen, et.al, " Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology " (experimental verification based on the distributed feedback semiconductor laser of reconstruction-equivalent chirp technology), Optics Express, 2009, 17 (7): 5240-5245, and Yuechun Shi, Xiangfei Chen, et.al, " Experimental demonstration of eight-wavelength distributed feedback semiconductor laser array using equivalent phase shift ", (adopting the experimental verification of eight Wavelength distribution feedback semiconductor laser arrays of equivalent phase shift), Optics Letters, 2012.37 (16): p.3315-3317.
Making on the basis of distributed feedback semiconductor laser and laser array based on reconstruction-equivalent chirp technology, the present invention adopts the mode of series/parallel hybrid integrated by the same chip integrated for lasers different for operation wavelength, and the operation wavelength to single laser is finely tuned by temperature or electric current, thus can realize meeting the tunable distributed feedback semiconductor laser of low cost that EPON (WDM-PON) requires.It is to be noted, by the simple superposition that the distributed feedback semiconductor laser of series/parallel hybrid integrated is not single laser, it needs to process the cross-interference issue between laser and coupling output mode, and its performance is also the result of multiple laser comprehensive function.
Summary of the invention
The object of the invention is reconstruction-equivalent chirp (REC) technology adopting low cost to manufacture, the WDM-PON market for future provides the tunable distributed feedback semiconductor laser of low cost.Its basic technology is that the mode that the distributed feedback semiconductor laser of multiple different wave length is mixed by series/parallel is on the same chip integrated.The present invention also aims to provide the mode of crosstalk isolation between adjoining laser chip.Technical scheme of the present invention is:
The method of the tunable distributed feed-back of low cost (DFB) semiconductor laser is realized based on series/parallel hybrid mode, laser optical grating construction is the sampling Bragg grating based on reconstruction-equivalent chirp technology, it is characterized in that adopting series/parallel hybrid mode to be integrated by the Distributed Feedback Laser based on reconstruction-equivalent chirp technology of different operating wavelength, one of them laser works is selected by electric current, and by the operation wavelength regulating temperature or electric current to control this laser, thus the continuous tuning of laser works wavelength can be realized; Each wavelength signals in by-pass channel is by exporting from same waveguide after coupling.
Described series/parallel hybrid integrated laser comprises m capable and n row independently based on the distributed feedback semiconductor laser of reconstruction-equivalent chirp technology, and total number of lasers is mn, and wherein m is between 2 to 20, and n is between 2 to 50.Single laser wherein adopts the method design of equivalent chirp and equivalent phase shift and making, and its phase shift position is in +/-40% region at sampled-grating center, and the wavelength interval between adjacent series laser device is greater than 1nm, is less than 5nm.By etching away ohmic contact layer InGaAsP and ridge waveguide layer InP covers 100nm ~ 300nm SiO again between adjoining laser
2the mode (isolated area width is between 5um to 80um) of insulating material, or by etching away ohmic contact layer InGaAsP, carry out ion implantation, then cover 100m ~ 300nm SiO
2the mode (isolated area width is between 2um to 15um) of insulating material realizes electric isolution.Described series/parallel hybrid integrated laser also can adopt side-coupled grating.The two ends of described series/parallel hybrid integrated laser need adopt anti-reflective film, and the end face reflection rate scope of anti-reflective film is 10
-5between 10%.Described series/parallel hybrid integrated laser adopts multimode reflection coupling device (MMI), array waveguide grating device (AWG), or other mode realizes coupling output.
In the low cost tunable laser based on REC technology and series/parallel hybrid integrated patten's design and making, the tuning mode that can adopt thermal tuning of each Distributed Feedback Laser, the scope of thermal tuning equals the wavelength interval between laser.On the base of tunable laser, thermoelectric refrigerating unit TEC is had (containing temperature-sensitive material in manufacturing process, general employing paltie effect, be also called heat-electrical effect), the working temperature of laser is controlled by TEC, thus the operation wavelength of laser can be controlled, be generally that temperature often raises 1 degree Celsius, laser works wavelength can change 0.1nm, then when variations in temperature 40 degrees Celsius, the operation wavelength of laser changes 4nm.In addition, these lasers can directly modulation.
Such as, a chip is total to the N number of laser of series/parallel, the wavelength interval of these lasers is identical, is λ
mnm, and under the adjustment of temperature, the wavelength of each laser can change (± λ in centre wavelength environs
p/ 2) nm, so the coefficient result of these lasers to realize [(N-1) × λ
m+ λ
p] tuning range of nm.Its working method is: select by electric current the laser needing work, is then finely tuned its operation wavelength by temperature.It is pointed out that at the same temperature, the operation wavelength of these lasers is not identical, and the wavelength interval of adjoining laser is uniform, and wavelength error can control within +/-0.5nm.In the ideal case, λ
m=λ
p, namely the wavelength spacing of adjoining laser equals the thermal tuning scope of single laser, but considers the wavelength error of laser itself, generally makes λ
mbe slightly less than λ
p, such as allow λ
m=0.8 × λ
p.
In the low cost tunable laser based on REC technology and series/parallel hybrid integrated patten's design and making, the light that each laser sends needs first to be coupled, then is exported by same waveguide.This mainly can adopt and realize in two ways: the laser of series/parallel and passive coupling device are made monolithic die by the first, namely while making chip of laser, consider the coupling output problem of laser, what finally obtain is the integrated chip that single waveguide exports; It two is adopt the method for hybrid integrated, makes respectively, then realize single waveguide by the method for Space Coupling and export by series/parallel laser and passive coupling device.Actual which kind of way of output that adopts is not in discussion scope of the present invention.
Beneficial effect
Feature of the present invention is: the equivalence-reconstruct chirp technology manufactured based on low cost, the distributed feedback semiconductor laser of its designing and making is expanded to the laser device made based on series/parallel hybrid integrated mode, thus obtain the tunable laser on a large scale of low cost.Wherein need the wavelength control processing laser, the passive coupling of the crosstalk between laser and multi-wavelength exports problem.The wavelength control problem of laser is resolved in Chinese invention patent " manufacture method of single-slice integrated semiconductor laser array and device " (CN200810156592.0).Wavelength accurately controls to be the advantage of reconstruction-equivalent chirp technology uniqueness, and the laser works wavelength based on its designing and making can control in the scope of +/-0.2nm.Cross-interference issue between laser is resolved in the present invention, adopts the crosstalk that the ridge waveguide layer etching away area of isolation can be avoided between laser effectively, and does not find leaky.Passive coupling as laser exports problem, because the various and relative maturity of coupled modes and simple, therefore not within the scope of discussion of the present invention.The invention has the advantages that the tunable laser operating wavelength range obtained can be very wide, and multiple wavelength can work simultaneously.When only considering that series system makes tunable laser, because the laser away from bright dipping end is operationally difficult to the absorption avoiding bright dipping end laser completely, therefore the number of lasers can connected is limited, thus tunable wave-length coverage is also restricted.And if adopt the mode of series and parallel connections simultaneously, then can widen the tuning range of laser to greatest extent, laser can be operated in any position in material gain spectral limit.The gain spectral halfwidth of usual material can reach 80nm, then the tuning range of laser also can reach 80nm.On the other hand, if only adopt series system, laser can only be operated in a wavelength at certain special time, if and adopt series/parallel hybrid integrated mode, laser may be simultaneously operated in different wave length, like this when needing the laser of multiple wavelength to work simultaneously, series/parallel mixing laser just has the advantage of its uniqueness.On current market, the price of tunable laser is substantially all more than 1000 dollars, and is expected to control the scope at 50 dollars ~ 100 dollars by the tunable laser that series system makes.But in dwdm system, the multiple wavelength signals of usual needs works simultaneously, such as when needs 80 wavelength signals work simultaneously, adopt the laser of series/parallel hybrid integrated just than adopting the laser cost of single series system to reduce 80 times, visible series/parallel hybrid integrated mode not only increases the performance of laser, and can obtain better economic benefit.
Accompanying drawing explanation
Fig. 1 is the distributed feedback semiconductor tunable laser schematic diagram based on series/parallel hybrid integrated.
3-1.N electrode; 3-2. substrate; 3-3. lower waveguide layer; 3-4. multiple quantum well layer; The upper ducting layer of 3-5.; 3-6. grating layer; 3-7. inhibition of corrosion layer; 3-8. ridge waveguide; 3-9. electric isolution material; 3-10.P electrode; 3-11. electric isolution groove
Fig. 2 is the distributed feedback semiconductor tunable laser schematic diagram based on series/parallel hybrid integrated.
The single Distributed Feedback Laser of 4-1.; 4-2. passive coupling device; The transmission direction of 4-3. light
The tunable laser output spectrum superposition schematic diagram that Fig. 3 makes based on series/parallel hybrid integrated mode.
The operation wavelength of the tunable laser that Fig. 4 makes based on series/parallel hybrid integrated mode is with the change schematic diagram of electric current.
Embodiment
Just be described based on the 3X4 section semiconductor laser with tunable of series/parallel hybrid integrated and multistage semiconductor laser with tunable respectively below.
[example 1] is based on the 3X4 section semiconductor laser with tunable of series/parallel hybrid integrated:
As shown in Figure 1, the epitaxial material of device is described below: first on the capable backing material of N once extension N-type InP resilient coating (thickness 200nm, doping content are about 1.1X10
18cm
-2), 100nm is altogether unjustifiable brilliant doping Lattice Matching InGaAsP ducting layer, strain InGaAsP multiple quantum well layer (light wavelength of fluorescence 1.52 microns, 7 quantum well: the wide 8nm of trap, 0.5% compressive strain; Build wide 10nm, lattice matched materials), InGaAsP grating material layer that 70nm is thick.Then common microelectronic technique is used to make the mask plate distributed containing the sampling period needed for equivalent grating.Next produce optical grating construction by the method for sampling mask plate and holographic interference exposure, (doping content is about 1.1X10 to the P type Lattice Matching InGaAsP ducting layer that then secondary epitaxy 100nm is thick
17cm
-2, the thickness of this layer of DFB section is 100nm), (doping content is from 3.5X10 for the p-type InP limiting layer of 1.7 micron thickness
17cm
-2be gradually varied to 1X10
18cm
-2) and the thick P type InGaAs ohmic contact layer of 100nm (doping content is greater than 1X10
19cm
-2).
Laser adopt ridge waveguide structure, comprise 3x4 section laser, wherein row and row between and list in the electric isolution groove all making 75um between row.The width of ridge waveguide is 3 microns, and the groove width of its both sides is 20 microns, is 1.5 microns deeply.In the process making ridge waveguide, make electric isolution groove in the lump, the InGaAsP ohmic contact layer by electric isolution groove region etches away, then at the SiO that surface coverage 300nm is thick together with InP ridge waveguide layer
2insulating barrier.Afterwards by the SiO above ridge waveguide
2material etch falls, and makes the P-type electrode in laser front.Laser-substrate carries out the N-type electrode at the thinning rear making back side.All there is anti-reflective film at the two ends of device, and plated film back reflection rate is less than 1%.Laser is listed between row and is adopted MMI, AWG or other mode to realize coupling output.
(operation wavelength is λ to the laser arranged when jth on needs i-th row
ij) work time, can by the electric current I on it
ijbe set to operating current, such as 50mA, then (i.e. the light of other section of laser generation can through this section of laser the electric current of all the other lasers to be all arranged on transparent electric current, but do not produce loss not to be exaggerated yet, be 10mA in this example), so this laser just can be operated in wavelength X
ij, and it can be made at (λ by regulating temperature
ij± 1.5) operated within range of nh.When needs use another laser, only the electric current of another one laser need be set to operating current, and the electric current of residue laser is all arranged on transparent electric current.
The output spectrum superposition figure of this laser is shown in Fig. 3, and its operation wavelength is shown in Fig. 4 with the change of electric current.
[example 2] is based on the multistage semiconductor laser with tunable of series/parallel hybrid integrated:
As shown in Figure 2, the 3X4 section tunable laser in example 1 can be expanded to the mxn section tunable laser comprising the capable and n row laser of m, material structure is identical with example 1, wherein between row and row and all make the electric isolution groove of 75um between the column and the column.In the process making electric isolution, first etched away by dry method or wet method mode by the ohmic contact layer InGaAsP of laser respective regions, then carry out ion implantation in this region, then cladding thickness is the insulating material SiO2 of 300nm.Afterwards by the SiO above ridge waveguide
2material etch falls, and makes the P-type electrode in laser front.Laser-substrate carries out the N-type electrode at the thinning rear making back side.All there is anti-reflective film at the two ends of device, and plated film back reflection rate is less than 1%.Laser adopts MMI, AWG or other mode to realize coupling output between the column and the column.
(operation wavelength is λ to the laser arranged when jth on needs i-th row
ij) work time, can by the electric current I on it
ijbe set to operating current, such as 50mA, then (i.e. the light of other section of laser generation can through this section of laser the electric current of all the other lasers to be all arranged on transparent electric current, but do not produce loss not to be exaggerated yet, be 10mA in this example), so this laser just can be operated in wavelength X
ij, and it can be made at (λ by regulating temperature
ij± 1.5) operated within range of nm.When needs use another laser, only the electric current of another one laser need be set to operating current, and the electric current of residue laser is all arranged on transparent electric current.
Claims (12)
1. the method for the tunable distributed feed-back of low cost (DFB) semiconductor laser is realized based on series/parallel hybrid mode, laser optical grating construction is the sampling Bragg grating based on reconstruction-equivalent chirp technology, it is characterized in that adopting series/parallel hybrid mode to be integrated by the Distributed Feedback Laser based on reconstruction-equivalent chirp technology of different operating wavelength, one of them laser works is selected by electric current, and by the operation wavelength regulating electric current or temperature to control this laser, thus the continuous tuning of laser works wavelength can be realized; Each wavelength signals in by-pass channel is by exporting from same waveguide after coupling.
2. the method realizing the tunable distributed feedback semiconductor laser of low cost based on series/parallel hybrid mode according to claim 1, adopt an electricity isolated region to reduce the crosstalk between adjoining laser between each laser that it is characterized in that series/parallel, thus realize controlling the independence of each laser.
3. the method realizing the tunable distributed feedback semiconductor laser of low cost based on series/parallel hybrid mode according to claim 1 and 2, it is characterized in that described laser comprises m capable and n row independently based on the distributed feedback semiconductor laser of equivalence-reconstruct chirp technology, total number of lasers is mn, wherein 2≤m≤20,2≤n≤50, within wavelength interval 1nm to the 5nm scope of adjacent series laser device.
4. the method realizing the tunable distributed feedback semiconductor laser of low cost based on series/parallel hybrid mode according to claim 1 and 2, it is characterized in that laser single in described series laser device adopts the method for equivalent chirp and equivalent phase shift to carry out designing and making, phase shift position sampled-grating center ± 40% region in.
5. the method realizing the tunable distributed feedback semiconductor laser of low cost based on series/parallel hybrid mode according to claim 1 and 2, it is characterized in that in described laser, distributed feedback structure adopts side-coupled optical grating construction, its grating is positioned at ridge waveguide both sides.
6. the method realizing the tunable distributed feedback semiconductor laser of low cost based on series/parallel hybrid mode according to claim 1 and 2, it is characterized in that described laser two ends adopt anti-reflective film, the end face reflection rate scope of anti-reflective film is 10
-5within 10% scope.
7. based on the tunable distributed feed-back of low cost (DFB) semiconductor laser prepared by series/parallel hybrid mode, wherein single laser is the Distributed Feedback Laser based on reconstruction-equivalent chirp technology, it is characterized in that reducing crosstalk by electricity isolated region between adjoining laser.
8. the tunable distributed feed-back of low cost (DFB) semiconductor laser prepared based on series/parallel hybrid mode according to claim 7, it is characterized in that: the production method of electricity isolated region be by laser respective regions ohmic contact layer InGaAsP and and ridge waveguide layer InP etched away by dry method or wet method mode, then cladding thickness is the insulating material SiO within 100nm to 300nm scope
2, the width of isolated area is within 5um to 80um scope.
9. the tunable distributed feed-back of low cost (DFB) semiconductor laser prepared based on series/parallel hybrid mode according to claim 7, it is characterized in that: the production method of electricity isolated region is: by laser respective regions ohmic contact layer InGaAsP etched away by dry method or wet method mode, carry out ion implantation in this region again, cladding thickness is the insulating material SiO within 100nm to 300nm scope afterwards
2, the width of isolated area is within 2um to 15um scope.
10. the tunable distributed feedback semiconductor laser of low cost prepared based on series/parallel hybrid mode according to claim 7,8 or 9, it is characterized in that single laser in described laser is the laser adopting equivalent phase shift method to carry out designing and making, its phase shift position sampled-grating center ± 40% region in.
11. tunable distributed feedback semiconductor lasers of low cost prepared based on series/parallel hybrid mode according to claim 7,8 or 9, is characterized in that described laser is the laser adopting side-coupled optical grating construction to make.
12. tunable distributed feedback semiconductor lasers of low cost prepared based on series/parallel hybrid mode according to claim 7,8 or 9, it is characterized in that described laser is that the laser of anti-reflective film has been plated at two ends, the end face reflection rate scope of anti-reflective film is 10
-5within 10% scope.
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| CN201310548888.8A CN104638511A (en) | 2013-11-08 | 2013-11-08 | Method and device for realizing low-cost tunable semiconductor laser based on reconstruction-equivalent chirp and series/parallel hybrid integration technologies |
| PCT/CN2014/087035 WO2015067099A1 (en) | 2013-11-08 | 2014-09-22 | Tunable semiconductor laser based on reconstruction-equivalent chirp and series mode or series and parallel hybrid integration, and preparation thereof |
| US14/903,740 US9742152B2 (en) | 2013-11-08 | 2014-09-22 | Tunable semiconductor laser based on reconstruction-equivalent chirp and series mode or series and parallel hybrid integration, and preparation thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105281200A (en) * | 2015-10-09 | 2016-01-27 | 南京大学（苏州）高新技术研究院 | Integrated high-speed digital modulation WDM-PON optical module based on REC technology |
| CN105490166A (en) * | 2016-01-21 | 2016-04-13 | 苏州苏大维格光电科技股份有限公司 | Micro-cavity laser array and visible light photometer comprising micro-cavity laser array |
| CN107180883A (en) * | 2017-05-04 | 2017-09-19 | 南京邮电大学 | Based on the single chip integrated hyperspace visible light communication system of InGaN photons |
| CN107706741A (en) * | 2017-10-13 | 2018-02-16 | 中国科学院长春光学精密机械与物理研究所 | A kind of gain coupling distributed feedback laser series connection linear array structure |
| CN110048304A (en) * | 2019-05-06 | 2019-07-23 | 福建中科光芯光电科技有限公司 | A kind of integrated DFB semiconductor laser and preparation method thereof |
| CN111490457A (en) * | 2020-04-22 | 2020-08-04 | 南京鼎芯瑞科股权投资合伙企业(有限合伙) | Refrigeration-free tunable semiconductor laser based on multi-wavelength array and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105281200A (en) * | 2015-10-09 | 2016-01-27 | 南京大学（苏州）高新技术研究院 | Integrated high-speed digital modulation WDM-PON optical module based on REC technology |
| CN105490166A (en) * | 2016-01-21 | 2016-04-13 | 苏州苏大维格光电科技股份有限公司 | Micro-cavity laser array and visible light photometer comprising micro-cavity laser array |
| CN105490166B (en) * | 2016-01-21 | 2019-07-05 | 苏州苏大维格光电科技股份有限公司 | Micro-cavity laser array and visible light photometer including it |
| CN107180883A (en) * | 2017-05-04 | 2017-09-19 | 南京邮电大学 | Based on the single chip integrated hyperspace visible light communication system of InGaN photons |
| CN107706741A (en) * | 2017-10-13 | 2018-02-16 | 中国科学院长春光学精密机械与物理研究所 | A kind of gain coupling distributed feedback laser series connection linear array structure |
| CN110048304A (en) * | 2019-05-06 | 2019-07-23 | 福建中科光芯光电科技有限公司 | A kind of integrated DFB semiconductor laser and preparation method thereof |
| CN111490457A (en) * | 2020-04-22 | 2020-08-04 | 南京鼎芯瑞科股权投资合伙企业(有限合伙) | Refrigeration-free tunable semiconductor laser based on multi-wavelength array and preparation method thereof |
| CN114777822A (en) * | 2022-04-18 | 2022-07-22 | 南京大学 | Fiber grating array synchronous sensing system based on multi-wavelength tunable laser |
| CN114777822B (en) * | 2022-04-18 | 2024-03-19 | 南京大学 | Fiber bragg grating array synchronous sensing system based on multi-wavelength tunable laser |
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