CN101364016B - 一种薄膜晶体管液晶显示器像素结构的制造方法 - Google Patents
一种薄膜晶体管液晶显示器像素结构的制造方法 Download PDFInfo
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- CN101364016B CN101364016B CN 200710120169 CN200710120169A CN101364016B CN 101364016 B CN101364016 B CN 101364016B CN 200710120169 CN200710120169 CN 200710120169 CN 200710120169 A CN200710120169 A CN 200710120169A CN 101364016 B CN101364016 B CN 101364016B
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 129
- 238000005530 etching Methods 0.000 claims description 46
- 238000009413 insulation Methods 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 238000005516 engineering process Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 15
- 238000003384 imaging method Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 5
- 238000001259 photo etching Methods 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200710120169 CN101364016B (zh) | 2007-08-10 | 2007-08-10 | 一种薄膜晶体管液晶显示器像素结构的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200710120169 CN101364016B (zh) | 2007-08-10 | 2007-08-10 | 一种薄膜晶体管液晶显示器像素结构的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101364016A CN101364016A (zh) | 2009-02-11 |
CN101364016B true CN101364016B (zh) | 2010-04-21 |
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CN 200710120169 Expired - Fee Related CN101364016B (zh) | 2007-08-10 | 2007-08-10 | 一种薄膜晶体管液晶显示器像素结构的制造方法 |
Country Status (1)
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CN (1) | CN101364016B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109445139A (zh) * | 2018-12-26 | 2019-03-08 | 山水电子(中国)有限公司 | 一种新型液晶显示屏的制造工艺 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1959510A (zh) * | 2006-11-10 | 2007-05-09 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器像素结构及其制造方法 |
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2007
- 2007-08-10 CN CN 200710120169 patent/CN101364016B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1959510A (zh) * | 2006-11-10 | 2007-05-09 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器像素结构及其制造方法 |
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CN101364016A (zh) | 2009-02-11 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141210 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141210 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
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TR01 | Transfer of patent right |
Effective date of registration: 20141210 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100421 Termination date: 20200810 |