CN101350390A - 一种led封装结构 - Google Patents

一种led封装结构 Download PDF

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CN101350390A
CN101350390A CNA2008100303738A CN200810030373A CN101350390A CN 101350390 A CN101350390 A CN 101350390A CN A2008100303738 A CNA2008100303738 A CN A2008100303738A CN 200810030373 A CN200810030373 A CN 200810030373A CN 101350390 A CN101350390 A CN 101350390A
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led
insulating substrate
encapsulating structure
ceramic insulating
led wafer
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CN101350390B (zh
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洪世豪
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Lite On Electronics Guangzhou Co Ltd
Lite On Technology Changzhou Co Ltd
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Silitek Electronic Guangzhou Co Ltd
Lite On Technology Corp
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Abstract

一种LED封装结构,包括绝缘陶瓷基板、封装壳体、至少一LED晶片、散热机构以及至少一导电回路,绝缘陶瓷基板包括第一表面和第二表面,封装壳体安装于绝缘陶瓷基板的第一表面上,其包括一穿孔,导电回路收容于封装壳体,其包括第一电连接端和第二电连接端,第一电连接端通过穿孔与第二电连接端连接,LED晶片与第二电连接端电连接,散热机构通过第二表面与绝缘基板连接。本发明通过将导电回路由封装基座内部穿设,不仅解决了两导电回路容易发生短路、电接触不良或散热不利影响通电质量等问题,而且,使得绝缘基板能够直接连接散热机构,大大增加了散热面积,提高了散热速度,从而提高了LED晶片的散热效率,进而提高LED晶片的发光效率。

Description

一种LED封装结构
技术领域
本发明涉及LED封装结构,尤指一种具有良好散热效果的LED封装结构。 背景技术
近年来,发光二极管(LED)被应用的领域相当广泛,如液晶屏幕上的光 源、投射灯、交通等以及汽车的刹车灯等等,日渐取代传统的灯丝灯泡。然而, 现有的LED灯泡,虽然具有体积小、能耗低的特性,但就单颗晶片灯泡而言, 光源能量较小,在诸多领域的应用都受到限制。为了增加发光源的整体亮度, 则有必要提高光源的发光功率或增加LED发光源的数目和密度,但若大幅增加 LED晶片的数目和密度,则将必然增加LED晶片的产出热量。
参照图1所示,传统LED封装结构包括绝缘基板10'、 LED晶片20'、连接 导线40,以及两个导电回路50,, LED晶片20,通过连接导线40,分别与导电回路 50'连接,其中,所述LED晶片20'固定于所述绝缘基板10'的第一表面101', 所述任一导电回路50,一端设于绝缘基板IO,的第一表面IOI,上,另一端设于其 第二表面102',使其环绕于绝缘基板10'的两侧端部,导电回路50'由高散热的 金属材料制成,除了具有导电的功能外,还起到对LED晶片20'进行散热的作 用在这种LED封装结构中,由于两导电回路50'的极性相反,因此两者不能过 于接近,以避免因绝缘基板10'等其他元件发生漏电,而致使两导电回路50'之 间发生短路现象。但是,由于两导电回路50'之间存在一定间隙,因此所提供的 散热面积也相对较小,因发光效率与散热效果的优劣程度成正比,如果大量的 热量无法尽快散出,必将严重影响到LED的发光亮度,同时,由于长期的散热 效率不高,也进而加速了 LED的损耗。
因此,提供一种具有良好散热效果的LED封装结构以解决上述问题实为必要。
发明内容
本发明的目的在于,提供一种具有良好散热效果的LED封装结构,通过散
热机构与绝缘陶瓷基板之间的紧密贴合,且提高有效散热面积,从而助于LED 晶片的快速散热,以提高其发光效率。
为了实现上述目的,本发明提供了一种LED封装结构,其包括绝缘陶瓷基 板、封装壳体、至少一LED晶片、散热机构以及至少一导电回路,所述绝缘陶 瓷基板包括第一表面和第二表面,所述封装壳体安装于所述绝缘陶瓷基板的第 一表面上,其包括一穿孔,所述导电回路收容于所述封装壳体,其包括第一电 连接端和第二电连接端,所述第一电连接端通过所述穿孔与第二电连接端连接, 所述LED晶片与第二电连接端电连接,所述散热机构与所述绝缘陶瓷基板的第 二表面连接。
本发明LED封装结构还可进一步包括以下附加技术特征:
在本发明的一个优选实施例中,所述LED封装结构进一步包括连接导线, 所述LED晶片通过连接导线与所述导电回路电连接。
所述LED晶片与所述绝缘陶瓷基板之间进一步包括连接层,所述连接层优 选为固晶胶层。在本发明中,LED晶片亦可旌过其他方式与绝缘陶瓷基板相连 接,例如:通过裸晶片贴装技术、倒焊芯片技术、胶粘技术或共晶焊接技术中 任选一种方式安装于所述绝缘陶瓷基板上。
所述散热机构为散热器或金属导热层,优选为金属导热层,所述金属导热 层通过迴焊的方式成型于所述绝缘陶瓷基板上,所述金属为银、铜、铝或其合 金中任选一种。
在本发明的另一个优选实施例中,所述LED晶片为复数个,其通过串联或 并联的方式相互电连接。共用复数个导电回路,组成多晶片的封装结构,既简 化了封装结构的整体结构,同时可显著提高整体的发光效率。
与现有技术相比,本发明LED封装结构一方面利用陶瓷散热性能优良的特 性,采用陶瓷作为绝缘基板的材质,以提高LED晶片工作过程中的散热速度。 另一方面,通过将导电回路由封装壳体内部穿设,而非环绕于绝缘陶瓷基板的 外周,不仅解决了两导电回路容易发生短路、电接触不良或散热不利影响通电 质量等问题,而且,使得绝缘陶瓷基板能够直接连接散热机构,通过散热机构 与绝缘陶瓷基板之间直接接触,提高了散热速度,另外,由于不受极性所限, 该表面可全部布设散热机构,大大增加了散热面积,从而显著地提高了LED晶
片的散热效率,进而提高LED晶片的发光效率。
为使本发明更加容易理解,下面将结合附图进一步阐述本发明不同的具体 实施例。
附图说明
图1为现有LED封装结构的示意图;
图2为本发明LED封装结构的实施例一的示意图;
图3为本发明LED封装结构的实施例二的示意图;
图4为本发明复数个LED封装结构导电回路实施例一的示意图,以及
图5为本发明复数个LED封装结构导电回路实施例二的示意图。
鼎錢放
参照图2所示,在本发明的实施例一中,提供了一种LED封装结构,其包 括绝缘陶瓷基板10、 LED晶片20,封装壳体30、连接导线40、散热机构50以 及两个导电回路60。所述绝缘陶瓷基板10包括第一表面101和第二表面102; 所述封装壳体30安装于所述绝缘陶瓷基板10的第一表面101上,其包括一穿 孔301,所述LED晶片20装设于所述绝缘陶瓷基板10的第一表面101上,所 述导电回路60收容于所述封装壳体30,其包括第一电连接端601和第二电连接 端602,所述第一电连接端601通过所述穿孔301与第二电连接端602连接,所 述LED晶片20与第二电连接端602电连接,所述散热机构50通过第二表面102 与所述绝缘陶瓷基板10连接。由于散热机构50与绝缘陶瓷基板10间紧密贴合, 通过散热机构50可将LED晶片20产生的热量迅速地传导出去,提高LED晶片 20的散热效率,从而提高其发光效率。
其中,所述绝缘陶瓷基板10的热导系数大于30〜420W/mK,更好地,可达 到50〜420W/mK,例如:绝缘陶瓷基板可为氮化铝(A1N),其热导系数为 170W/mK。在本实施例中,所述封装壳体30位于所述绝缘陶瓷基板周围区域, 用于收容所述两个电性相反的导电回路60,其包括两个封装单元30a和30b, 其分别地竖立于所述导电回路60的左右两侧,其可由一体成型或分别成型制成。 所述导电回路60由金属导体制成,如银或铜等,其包括相互连接的第一电连接
端601、第二电连接端602以及导电主体603,所述第一电连接端601延伸至所 述封装壳体30外,用于与外接电源电性连接,所述第二电连接端602设置于绝 缘陶瓷基板10的第一表面101上,即绝缘陶瓷基板10与封裝壳体30之间,所 述导电主体603收容于穿孔301中,导电回路60通过连接导线40与所述LED 晶片20电性连接,从而实现LED晶片20与外部电源的电性连接。所述连接导 线40可选用导电性能良好的材料制成,如金等,其布设于所述绝缘陶瓷基板10 的第一表面101上。
在本实施例中,所述穿孔301的形状不受限制,只要其贯穿于封装壳体30 的内部即可,使得导电回路60的第一电连接端601能够通过穿孔301与第二电 连接端602电性连接,如此以来,LED晶片20即可不必通过在封装壳体外布设 导电回路与外部电源电性连接,使其整体结构更为简单,同时,解决了现有技 术中,由于导电回路外包裹于绝缘基板外,电接触点暴露在外,使得两电极之 间容易发生短路或电接触不良等的问题,并且,通过将导电回路60封装并隔离 起来,减小了LED晶片的发热对其造成的影响,避免了由于散热不利而影响导 电回路60的导电效果。
在本实施例中,参照图2所示,所述LED晶片与所述绝缘陶瓷基板之间进 一步包括连接层70。在本发明中,所述LED晶片20亦可通过其他方式安装于 所述绝缘陶瓷基板10上,如通过裸晶片贴装技术(COB, Chip On Board)、倒 焊芯片技术、胶粘技术或共晶焊接技术等方式。
参照图3所示,本发明LED封装结构的实施例二中,亦可省略连接导线40, 通过倒焊芯片技术(Flip-chip)将所述LED晶片20固定于所述绝缘陶瓷基板10 上,使其直接与所述导电回路60电性连接。在本实施例中,所述连接层70为 导电层,所述导电回路60的第二电连接端602与LED晶片20之间进一步设置 有导电端子(未标示),用于固定LED晶片20,同时,通过所述导电端子也实 现LED晶片20的p/n电极分别与两电性相反的第二电连接端602之间的电性连 接,所述导电端子优选锡胶或焊锡。
在本实施例中,所述LED芯片20安置于所述封装壳体30的封装单元30b 与所述陶瓷绝缘基板10所限定的封闭空腔80中,所述封闭空腔80内填充有树 脂材料。并且,封装单元30b与所述陶瓷绝缘基板IO之间围成的内表面形成有
反光区域90,所述反光区域90镀有高反射材料,如陶瓷、油漆或反射性金属层 等,其反光率为85%-100%,所述封装单元30b亦可由高反射材料制成。
在本发明中,所述散热机构50可为散热器或金属导热层。当散热机构50 为金属层时,熔融状金属如银、铜、铝或其合金等可通过迴焊的方式均匀地涂 覆于绝缘陶瓷基板10的第二表面102上,于第二表面102上成型金属导热层, 由于不受极性所限,该表面可全部地涂覆金属导热层,大大增加了散热面积, 从而显著地提高了 LED晶片的散热效率,进而提高LED晶片的发光效率。同时, 还起到简化LED封装结构的整体结构以及表面贴装工序的作用。
在本发明中,所述导电回路60可设置为一个或多个,各导电回路之间的结 构不受限制,只要LED封装结构中的任意一个导电回路满足上述结构即可,更 优选的是,本发明LED封装结构具有两个上述导电回路,电性相反的两导电回 路经由封装壳体内部贯穿,而将LED晶片与外部电源电性连接。
参照图4和图5所示,在本发明中,还进一步提供了一种复数个LED晶片 的封装结构导电回路示意图。参照图4,在本实施例,复数个LED晶片20装设 于一封装壳体中,并通过复数根连接导线40將所述复数个LED晶片20串联在 一起,相互串联的复数个LED晶片20通过共用的两个第一电连接端601与外 接电源电连接。参照图5,在本实施例,复数个LED晶片20装设于一封装壳体 中,所述复数个LED晶片20分別有其各自成对的导电回路60,并通过复数对 第一电连接端601与外接电源电连接而形成复数相互并联之导电回路60与相互 并联的LED晶片20。
在本发明中,所述LED晶片20的结构和种类可不受限制,即复数个LED 晶片的封装结构中的各个LED晶片20的结构可相同亦可不同;同样地,所述 导电回路60的结构和种类也可不受限制,即复数个LED晶片的封装结构中的 各个导电回路60的结构可相同亦可不同。通过复数个晶片封装减小了 LED封 装结构的整体体积,提高单位面积内的发光效率,进一步提高其发光强度。在 本发明,LED晶片20之间的连接方式不受限制,连接方式可根据具体导电回路 结构以及LED晶片安装方式的不同而定。
惟以上所述者,仅为本发明的较佳实施例而已,当不能以此限定本发明实 施的范围,即大凡依本发明权利要求及发明说明书所记载的内容所作出简单的
等效变化与修饰,皆仍属本发明权利要求所涵盖范围之内。此外,摘要部分和 标题仅是用来辅助专利文件搜寻之用,并非用来限制本发明的权利范围。

Claims (10)

1.一种LED封装结构,其包括:绝缘陶瓷基板、封装壳体、至少一LED晶片、散热机构以及至少一导电回路,其特征在于:所述绝缘陶瓷基板包括第一表面和第二表面,所述封装壳体安装于所述绝缘陶瓷基板的第一表面上,其包括一穿孔,所述导电回路收容于所述封装壳体中,其包括第一电连接端和第二电连接端,所述第一电连接端通过所述穿孔与第二电连接端连接,所述LED晶片与第二电连接端电连接,所述散热机构与所述绝缘陶瓷基板的第二表面连接。
2. 根据权利要求1所述的LED封装结构,其特征在于进一步包括连接导线, 所述LED晶片通过连接导线与所述导电回路电连接。
3. 根据权利要求1所述的LED封装结构,其特征在于进一步包括连接层, 所述LED晶片通过连接层固定于所述绝缘陶瓷基板之上。
4. 根据权利要求1所述的LED封装结构,其特征在于:所述导电回路为两 个,所述两导电回路极性相反。
5. 根据权利要求1所述的LED封装结构,其特征在于:所述LED晶片通过 裸晶片贴装技术、倒焊芯片技术、胶粘技术或共晶焊接技术中任选一种方式安 装于所述绝缘陶瓷基板上。
6. 根据权利要求1所述的LED封装结构,其特征在于:所述绝缘陶瓷基板 的热导系数为30~420W/mK。
7. 根据权利要求1-6任一项所述的LED封装结构,其特征在于:所述散热 机构为散热器或金属导热层。
8. 根据权利要求7所述的LED封装结构,其特征在于:所述金属导热层通 过迴焊的方式成型于所述绝缘陶瓷基板上,所述金属为银、铜、铝或其合金中 任选一种。
9. 根据权利要求1所述的LED封装结构,其特征在于:所述封装壳体与陶 瓷绝缘基板之间围成的内表面形成有反光区域,所述反光区域的反光率为 85%國100%。
10. 根据权利要求1-6任一项所述的LED封装结构,其特征在于:所述LED 晶片为复数个,其通过串联或并联的方式相互电连接。
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