CN101350240B - Stacking slice type piezoresistor and manufacturing method thereof - Google Patents
Stacking slice type piezoresistor and manufacturing method thereof Download PDFInfo
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- CN101350240B CN101350240B CN200710075896XA CN200710075896A CN101350240B CN 101350240 B CN101350240 B CN 101350240B CN 200710075896X A CN200710075896X A CN 200710075896XA CN 200710075896 A CN200710075896 A CN 200710075896A CN 101350240 B CN101350240 B CN 101350240B
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Abstract
The invention provides a laminated slice type voltage-sensitive resistor and the manufacturing method of the voltage-sensitive resistor, which is suitable for electronic enterprises, the resistor comprises a lower cover, an upper cover, a voltage-sensitive resistor unit and a terminal electrode, wherein the voltage-sensitive resistor unit is arranged between the upper and the lower covers, the upper and the lower covers are made of ceramic protecting materials, the voltage-sensitive resistor unit is composed of an internal electrode, voltage-sensitive resistor film and ceramic protecting film, wherein the internal electrode and the voltage-sensitive resistor film are overprinted, the ceramic protecting film is overprinted on both sides of the overprinted internal electrode and the overprinted voltage-sensitive resistor film. The manufacturing method comprises the processes of batching, pulping, tape preparing, printing, hot-water voltage-sharing, slicing, dumping, sintering, end capping, electroplating and the like. The invention adopts the ceramic protecting materials and the method of overprinting the voltage-sensitive resistor film to form a homogenous, compact and moisture-proof protecting layer on the other four surfaces except both ends of the voltage-sensitive resistor, thereby the product can be easily electroplated with nickel and tin, and the reliability of the welding of the product is greatly improved.
Description
Technical field
The present invention relates to a kind of stacking slice type piezoresistor and manufacture method thereof.
Background technology
In the prior art, slice type piezoresistor be utilize slurry film forming, lamination, all press, the novel chip component of high technology content that chip technology manufacturing such as cutting, sintering, end-blocking, burning end, plating forms, be widely used in a plurality of fields such as various mobile communication equipments, household electrical appliance, medicine equipment, automobile.Domestic and international most of manufacturers all adopt " wet process technique " of wet method curtain coating, laminated forming to be made at present.In manufacture process, because wet moulding is single slurry one-shot forming, the particularity of piezoresistive material in addition, in the process of electroplating, plating bath can cause material property to change to the erosion and the plating diffusion of material, resulting product is not easy to carry out electronickelling, tin and handles, thereby the back operation need carry out surface treatment toward contact, and the production cost is higher and qualification rate is low.
Summary of the invention
The technical problem that the embodiment of the invention will solve is to provide a kind of stacking slice type piezoresistor that is easy to carry out electronickelling, tin processing.
Another technical problem that will solve of the embodiment of the invention is to provide the manufacture method of above-mentioned stacking slice type piezoresistor.
The embodiment of the invention is to realize like this; a kind of stacking slice type piezoresistor; comprise lower cover, loam cake, piezo-resistance unit and termination electrode; the piezo-resistance unit is located between the upper and lower cover; loam cake, lower cover are made by ceramic protective material; the piezo-resistance unit is made up of interior electrode, piezo-resistance film and ceramic diaphragm; interior electrode and piezo-resistance film double exposure; pottery diaphragm cover is imprinted on the interior electrode and the piezo-resistance film both sides of double exposure, and the material component of described piezo-resistance film and percentage by weight thereof are:
Zinc oxide ZnO 70%-95%
Bismuth oxide Bi
2O
31%-7%
Antimony oxide Sb
2O
30.5%-15%
Cobalt oxide Co
3O
40.15%-4%
Manganese carbonate MnCO
30.2%-1%
Chromium oxide Cr
2O
30.6%-1.2%
The oxidation nickel
2O
30.1%-5%
Aluminum nitrate Al (NO3)
39H
2O 0.0005%-8%
Silver nitrate AgNO
30.0005%-6%
Boric acid H
2BO
30.01%-12%
Barium titanate BaTiO
30.01%-10%.
The manufacturing of above-mentioned stacking slice type piezoresistor may further comprise the steps:
(1) adopt ceramic diaphragm material and piezo-resistance membrane material to make corresponding powder respectively, the material component of described piezo-resistance film and percentage by weight thereof are:
Zinc oxide ZnO 70%-95%
Bismuth oxide Bi
2O
31%-7%
Antimony oxide Sb
2O
30.5%-15%
Cobalt oxide Co
3O
40.15%-4%
Manganese carbonate MnCO
30.2%-1%
Chromium oxide Cr
2O
30.6%-1.2%
The oxidation nickel
2O
30.1%-5%
Aluminum nitrate Al (NO
3)
39H
2O 0.0005%-8%
Silver nitrate AgNO
30.0005%-6%
Boric acid H
2BO
30.01%-12%
Barium titanate BaTiO
30.01%-10%;
(2) get described ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer is mixed into the system band slurry that viscosity is 20-500PaS, wherein solvent is the mixture or the dimethylbenzene of mixture, n-propyl acetate and the absolute ethyl alcohol of n-propyl acetate and isobutanol; Get described piezo-resistance film powder and adhesive, solvent, the abundant ball milling of plasticizer is mixed into the printing slurry that viscosity is 200-1000PaS, wherein solvent is mixture, terpinol or the butyl carbitol of mixture, butyl glycol ether and the butyl carbitol of terpinol and ethanol; Get the printing slurry that ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer are mixed into 200-1000PaS, wherein solvent is mixture, terpinol or the butyl carbitol of mixture, butyl glycol ether and the butyl carbitol of terpinol and ethanol;
(3) will make band slurry curtain coating and become strip, and dry for standby;
(4) adopt in the step (3) the gained strip to make lower cover, under cover the piezo-resistance unit be set, be included in down and cover the electrode size that pattern is set in printing, dry then; Adopt the printing of the middle gained piezo-resistance film printing of step (2) slurry to cover on the interior electrode pattern oven dry then; Drying behind the double exposure electrode size again on the piezo-resistance film; Dry then the interior electrode and the piezo-resistance film both sides of adopting the middle gained pottery of step (2) diaphragm printing slurry cover to be imprinted on double exposure;
(5) make loam cake and it is carried out hot water with the lower cover that is provided with the piezo-resistance unit all press, get single ceramics through cutting, binder removal, sintering, chamfering then;
(6) with the ceramics after the chamfering through upper end electrode, silver ink firing, plating.
Compared with prior art; because the technical scheme loam cake that the embodiment of the invention provides; lower cover all adopts ceramic protective material to make; adopt ceramic protective material cover to be imprinted on the interior electrode and the piezo-resistance film both sides of double exposure; the moulding simultaneously of ceramic protective layer and piezo-resistance film; form even compact on four sides in piezo-resistance all the other except that two ends; the protective layer of moisture-proof; efficiently solve diffusion that product causes and the problem of bringing degradation in the process of electroplating; make product be easier to carry out electronickelling; tin is handled; improved the soldering reliability of product greatly; back operation also need not to carry out surface treatment; reduce the production cost to a great extent, increased the qualification rate of product.
Description of drawings
Fig. 1 is the structural representation of the preferred embodiment that provides of the embodiment of the invention;
Fig. 2 is interior electrode, piezo-resistance film and a ceramic diaphragm chromatography end view in the embodiment of the invention.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
As shown in Figure 1, 2; the stacking slice type piezoresistor that the embodiment of the invention provides; comprise the lower cover 5 and the loam cake 6 that are made by ceramic protective material; two termination electrodes 1 and be located between loam cake 6, the lower cover 5 overlapping piezo-resistance unit (as required; the piezo-resistance unit can be for one or more), wherein adjacent cells has that electrode is shared in one.Each piezo-resistance unit is made up of interior electrode 2, piezo-resistance film 3 and ceramic diaphragm 4, interior electrode 2 and piezo-resistance film 3 double exposures, and ceramic diaphragm 4 covers are imprinted on the interior electrode 2 and piezo-resistance film 3 both sides of double exposure.
The manufacture method of the stacking slice type piezoresistor that the embodiment of the invention provides may further comprise the steps:
(1) adopt ceramic diaphragm material and piezo-resistance membrane material to make corresponding powder respectively;
(2) get described ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer is mixed into the system band slurry that viscosity is 20-500PaS, wherein solvent is the mixture or the dimethylbenzene of mixture, n-propyl acetate and the absolute ethyl alcohol of n-propyl acetate and isobutanol; Get described piezo-resistance film powder and adhesive, solvent, the abundant ball milling of plasticizer is mixed into the printing slurry that viscosity is 200-1000PaS, wherein solvent is mixture, terpinol or the butyl carbitol of mixture, butyl glycol ether and the butyl carbitol of terpinol and ethanol; Get the printing slurry that ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer are mixed into 200-1000PaS, wherein solvent is mixture, terpinol or the butyl carbitol of mixture, butyl glycol ether and the butyl carbitol of terpinol and ethanol;
(3) will make band slurry curtain coating and become strip, and dry for standby;
(4) adopt in the step (3) the gained strip to make lower cover, under cover the piezo-resistance unit be set, be included in down and cover the electrode size that pattern is set in printing, dry then; Adopt the printing of the middle gained piezo-resistance film printing of step (2) slurry to cover on the interior electrode pattern oven dry then; Drying behind the double exposure electrode size again on the piezo-resistance film; Dry then the interior electrode and the piezo-resistance film both sides of adopting the middle gained pottery of step (2) diaphragm printing slurry cover to be imprinted on double exposure;
(5) make loam cake and it is carried out hot water with the lower cover that is provided with the piezo-resistance unit all press, get single ceramics through cutting, binder removal, sintering, chamfering then;
(6) with the ceramics after the chamfering through upper end electrode, silver ink firing, plating.
In the above-mentioned steps (1) piezo-resistance film powder adopt the piezo-resistance membrane material to grind and evenly mix 15-30 hour to particle diameter be 1.0-1.2 μ m, oven dry back 40-100 order sieves and makes, material therefor component and content thereof (weight) are:
Zinc oxide ZnO 70%-95%
Bismuth oxide Bi
2O
31%-7%
Antimony oxide Sb
2O
30.5%-15%
Cobalt oxide Co
3O
40.15%-4%
Manganese carbonate MnCO
30.2%-1%
Chromium oxide Cr
2O
30.6%-1.2%
The oxidation nickel
2O
30.1%-5%
Aluminum nitrate Al (NO
3)
39H
2O 0.0005%-8%
Silver nitrate AgNO
30.0005%-6%
Boric acid H
2BO
30.01%-12%
Barium titanate BaTiO
30.01%-10%.
Pottery diaphragm powder adopt ceramic diaphragm material to grind and evenly mix 15-30 hour to particle diameter be 1.0-1.2 μ m, oven dry back 40-100 order sieves and makes, material therefor component and content thereof (weight) are:
Zinc oxide ZnO 60%-82%
Silicon oxide sio
25%-25%
Bismuth oxide Bi
2O
32%-20%
Boron oxide B
2O
31%-15%
Aluminium oxide Al
2O
31%-20%
Calcium oxide CaO 0.05%-15%
Magnesium oxide MgO 0.02%-6%
System band slurry in the above-mentioned steps (2), by weight, wherein contain adhesive 5-20, contain solvent 80-200, plasticizer-containing 1-20, contain powder 100, both ratios are 80-120: 25-50 in the described admixture solvent of being made up of n-propyl acetate and isobutanol, and both ratios are 80-120: 25-50 in the admixture solvent of being made up of n-propyl acetate and absolute ethyl alcohol; Piezo-resistance film printing slurry, by weight, wherein contain adhesive 5-20, contain solvent 80-200, plasticizer-containing 1-20, contain powder 100, both ratios are 80-120: 25-50 in the mixed solvent that described terpinol and ethanol are formed, and both ratios are 1: 1 in the mixed solvent of being made up of butyl glycol ether and butyl carbitol; Pottery diaphragm printing slurry; by weight; wherein contain adhesive 5-30; contain solvent 50-200; plasticizer-containing 1-20; contain powder 100, both ratios are 80-120: 25-50 in the mixed solvent that described terpinol and ethanol are formed, and both ratios are 1: 1 in the mixed solvent of being made up of butyl glycol ether and butyl carbitol.
Strip thickness is 20-80 μ m in the above-mentioned steps (3), and bake out temperature is 70-130 ℃.
Above-mentioned steps (4) also is included in described covering down a plurality of overlapping piezo-resistance unit is set, and it is shared in every adjacent piezo-resistance unit an interior electrode being arranged; Electrode size adopts silver-colored palladium slurry or fine silver slurry.
Cutting step is in the above-mentioned steps (5): the piezo-resistance substrate of making is cut into meet product standard overall dimension, make single piezo-resistance substrate; The binder removal step is: the piezo-resistance substrate after will cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 200 ℃-600 ℃, and the binder removal time is 10 hours-38 hours; Sintering step is: the piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 900 ℃-1200 ℃, and sintering time is 0.5 hour-3 hours.
In the above-mentioned steps (6) upper end electrode, silver ink firing after with sintering single piezo-resistance substrate two-end part adopts the silver-colored mode coated end electrode slurry manufacturing terminal electrode that is coated with of dipping, the silver ink firing temperature is 500 ℃-900 ℃, the silver ink firing time is 10 minutes-120 minutes; Plating step is: the two end electrodes that will make the piezoresistive wafer of termination electrode is passed through electronickelling, tin successively, promptly makes finished product.
Embodiment 1
The manufacture method of the stacking slice type piezoresistor that present embodiment provides may further comprise the steps:
(1) powder preparation: adopt ceramic diaphragm material and piezo-resistance membrane material to make corresponding powder respectively.
Piezo-resistance film powder adopt the piezo-resistance membrane material to grind and evenly mix 30 hours to particle diameter be 1.0 μ m, 150 ℃ of oven dry, 80 orders sieve and make, material therefor component and content thereof (weight) are:
Zinc oxide ZnO 85%
Bismuth oxide Bi
2O
33.5%
Antimony oxide Sb
2O
35%
Cobalt oxide Co
3O
42%
Manganese carbonate MnCO
30.5%
Chromium oxide Cr
2O
31%
The oxidation nickel
2O
31%
Aluminum nitrate Al (NO
3)
39H
2O 0.01%
Silver nitrate AgNO
30.02%
Boric acid H
2BO
31%
Barium titanate BaTiO
30.97%.
Pottery diaphragm powder adopt ceramic diaphragm material to grind and evenly mix 30 hours to particle diameter be 1.0 μ m, 150 ℃ of oven dry, 80 orders sieve and make, material therefor component and content thereof (weight) are:
Zinc oxide ZnO 75%
Silicon oxide sio
29.4%
Bismuth oxide Bi
2O
37%
Boron oxide B
2O
32.56%
Aluminium oxide Al
2O
33%
Calcium oxide CaO 0.1%
Magnesium oxide MgO 0.04%
Manganese carbonate MnCO
32.9%.
(2) configuration slurry
A, get ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer are mixed into the system band slurry that viscosity is 80PaS, by weight, adhesive: solvent: plasticizer: ceramic diaphragm powder is 20: 100: 10: 100, and described solvent is the mixture that n-propyl acetate and isobutanol disposed by weight 90: 25;
B, the quick resistive film powder of pressure and adhesive, solvent, the abundant ball milling of plasticizer are mixed into the printing slurry that viscosity is 200PaS, by weight, adhesive: solvent: plasticizer: piezo-resistance film powder is 20: 100: 10: 100, and described solvent is the mixture that terpinol and ethanol disposed by weight 100: 33;
C, get ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer are mixed into the printing slurry that viscosity is 200PaS, by weight, adhesive: solvent: plasticizer: ceramic diaphragm powder is 80: 280: 50: 280, and described solvent is the mixture that terpinol and ethanol disposed by weight 100: 33;
(3) system band: the system band slurry that will configure places in the funneling box that shoots material, and carrying out curtain coating on steel band, to become thickness be the strip of 60 μ m, and through 100 ℃ of dry for standby of baking oven;
(4) chromatography moulding: the strip for preparing is made lower cover by design thickness, lower cover thickness 0.35mm, and set the interior electrode of pattern covering printing down covering the mode that adopts printing down, inner electrode adopts silver-colored palladium slurry or fine silver slurry, adopts the mode of baking to dry electrode size after the printing;
On the electrode pattern, printing thickness 60 μ m adopted the mode of baking to dry in piezo-resistance film slurry after the printing in the mode of on the interior electrode of setting pattern the employing of piezo-resistance film slurry being printed covered;
The place that does not cover piezo-resistance film slurry on the next door of the interior electrode of setting pattern adopts the mode of printing to cover between the piezo-resistance film slurry in ceramic diaphragm slurry, and printing thickness 60 μ m adopt the mode of baking to dry ceramic diaphragm after the printing;
Repeat above step successively to designing 6 layers of the numbers of plies according to design piezo-resistance unit number, press design thickness then and make loam cake, upper cover thickness 0.35mm, and carry out hot water with the lower cover that is printed with the piezo-resistance film and all press;
(5) cutting
The piezo-resistance substrate of making is cut into 1608 specification green compact sizes, make single piezo-resistance substrate;
(6) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 270 ℃, and the binder removal time is 38 hours;
(7) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1100 ℃, and sintering time is 2 hours;
(8) end-blocking
To get the silver-colored mode coated end electrode slurry manufacturing terminal electrode that is coated with that single piezo-resistance substrate two-end part adopts dipping behind the sintering, the silver ink firing temperature is 750 ℃, and the silver ink firing time is 40 minutes;
(9) electroplate
The two end electrodes of making the piezoresistive wafer of termination electrode is passed through electronickelling, tin successively, promptly make 1608 specification pressure sensitive voltage 18V, leakage current is less than 5 microamperes (83% pressure sensitive voltage is measured down), and discharge capacity is greater than the finished product of 30A (8/20 μ s).
The stacking slice type piezoresistor manufacture method of the embodiment of the invention may further comprise the steps:
(1) powder preparation: adopt ceramic diaphragm material and piezo-resistance membrane material to make corresponding powder respectively.
Piezo-resistance film powder adopt the piezo-resistance membrane material to grind and evenly mix 30 hours to particle diameter be 1.0 μ m, 150 ℃ of oven dry, 80 orders sieve and make, material therefor component and content thereof (weight) are:
Zinc oxide ZnO 85%
Bismuth oxide Bi
2O
35%
Antimony oxide Sb
2O
33.7%
Cobalt oxide Co
3O
41.6%
Manganese carbonate MnCO
31.5%
Chromium oxide Cr
2O
30.8%
The oxidation nickel
2O
31%
Aluminum nitrate Al (NO
3)
39H
2O 0.01%
Silver nitrate AgNO
30.02%
Boric acid H
2BO
31%
Barium titanate BaTiO
30.37%.
Pottery diaphragm powder adopt ceramic diaphragm material to grind and evenly mix 30 hours to particle diameter be 1.0 μ m, 150 ℃ of oven dry, 80 orders sieve and make, material therefor component and content thereof (weight) are:
Zinc oxide ZnO 75%
Silicon oxide sio
29.4%
Bismuth oxide Bi
2O
37%
Boron oxide B
2O
32.56%
Aluminium oxide Al
2O
33%
Calcium oxide CaO 0.1%
Magnesium oxide MgO 0.04%
Manganese carbonate MnCO
32.9%.
(2) the configuration slurry is configured slurry with above-mentioned powder proportioning, and method is with embodiment 1;
(3) system band: the system band slurry that will configure places in the funneling box that shoots material, and carrying out curtain coating on steel band, to become thickness be the strip of 30 μ m, and through 100 ℃ of dry for standby of baking oven;
(4) chromatography moulding: the strip for preparing is made lower cover by design thickness, lower cover thickness 0.24mm, and set the interior electrode of pattern covering printing down covering the mode that adopts printing down, inner electrode adopts silver-colored palladium slurry or fine silver slurry, adopts the mode of baking to dry electrode size after the printing;
On the electrode pattern, printing thickness 30 μ m adopted the mode of baking to dry in piezo-resistance film slurry after the printing in the mode of on the interior electrode of setting pattern the employing of piezo-resistance film slurry being printed covered;
The place that does not cover piezo-resistance film slurry on the next door of the interior electrode of setting pattern adopts the mode of printing to cover between the piezo-resistance film slurry in ceramic diaphragm slurry, and printing thickness 30 μ m adopt the mode of baking to dry ceramic diaphragm after the printing;
Repeat above step successively to designing 6 layers of the numbers of plies according to design piezo-resistance unit number, press design thickness then and make loam cake, upper cover thickness 0.18mm, and carry out hot water with the lower cover that is printed with the piezo-resistance film and all press;
(5) cutting
The piezo-resistance substrate of making is cut into 1005 specification green compact sizes, make single piezo-resistance substrate;
(6) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 270 ℃, and the binder removal time is 38 hours;
(7) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1000 ℃, and sintering time is 2 hours;
(8) end-blocking
To get the silver-colored mode coated end electrode slurry manufacturing terminal electrode that is coated with that single piezo-resistance substrate two-end part adopts dipping behind the sintering, the silver ink firing temperature is 750 ℃, and the silver ink firing time is 40 minutes;
(9) electroplate
The two end electrodes of making the piezoresistive wafer of termination electrode is passed through electronickelling, tin successively, promptly make 1005 specification pressure sensitive voltage 5V, leakage current is less than 5 microamperes (83% pressure sensitive voltage is measured down), and discharge capacity is greater than the finished product of 20A (8/20 μ s).
The mixed solvent of being made up of n-propyl acetate and isobutanol among the above embodiment 1,2 all can change mixed solvent or the dimethylbenzene of being made up of n-propyl acetate and absolute ethyl alcohol into, and wherein both weight ratios are 80: 25 or 120: 50 in the mixed solvent of being made up of n-propyl acetate and isobutanol; The mixed solvent of being made up of terpinol and ethanol all can change into by the mixed solvent of being made up of butyl glycol ether and butyl carbitol, terpinol or butyl carbitol, is 1: 1 by both weight ratios in the mixed solvent of butyl glycol ether and butyl carbitol wherein.
The technical scheme loam cake that the embodiment of the invention provides; lower cover all adopts ceramic protective material to make; adopt ceramic protective material cover to be imprinted on the interior electrode and the piezo-resistance film both sides of double exposure; the moulding simultaneously of ceramic protective layer and piezo-resistance film; form even compact on four sides in piezo-resistance all the other except that two ends; the protective layer of moisture-proof; efficiently solve diffusion that product causes and the problem of bringing degradation in the process of electroplating; make product be easier to carry out electronickelling; tin is handled; improved the soldering reliability of product greatly; back operation also need not to carry out surface treatment; reduce the production cost to a great extent, increased the qualification rate of product.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. stacking slice type piezoresistor; comprise lower cover, loam cake, piezo-resistance unit and termination electrode; described piezo-resistance unit is located between the upper and lower cover; it is characterized in that: described loam cake, lower cover are made by ceramic protective material; described piezo-resistance unit is made up of interior electrode, piezo-resistance film and ceramic diaphragm; electrode and piezo-resistance film double exposure in described; described ceramic diaphragm cover is imprinted on the interior electrode and the piezo-resistance film both sides of double exposure, and the material component of described piezo-resistance film and percentage by weight thereof are:
Zinc oxide ZnO 70%-95%
Bismuth oxide Bi
2O
31%-7%
Antimony oxide Sb
2O
30.5%-15%
Cobalt oxide Co
3O
40.15%-4%
Manganese carbonate MnCO
30.2%-1%
Chromium oxide Cr
2O
30.6%-1.2%
The oxidation nickel
2O
30.1%-5%
Aluminum nitrate Al (NO
3)
39H
2O 0.0005%-8%
Silver nitrate AgNO
30.0005%-6%
Boric acid H
2BO
30.01%-12%
Barium titanate BaTiO
30.01%-10%.
2. stacking slice type piezoresistor according to claim 1 is characterized in that, the piezo-resistance unit is overlapping a plurality of between the described upper and lower cover, and wherein adjacent cells has that electrode is shared in one.
3. according to each described stacking slice type piezoresistor of claim 1-2, it is characterized in that: the material component of described ceramic diaphragm and percentage by weight thereof are:
Zinc oxide ZnO 60%-82%
Silicon oxide sio
25%-25%
Bismuth oxide Bi
2O
32%-20%
Boron oxide B
2O
31%-15%
Aluminium oxide Al
2O
31%-20%
Calcium oxide CaO 0.05%-15%
Magnesium oxide MgO 0.02%-6%
Manganese carbonate MnCO
32%-7%.
4. manufacture method of stacking slice type piezoresistor according to claim 1 may further comprise the steps:
(1) adopt ceramic diaphragm material and piezo-resistance membrane material to make corresponding powder respectively, used piezo-resistance membrane material component and weight percentage thereof are:
Zinc oxide ZnO 70%-95%
Bismuth oxide Bi
2O
31%-7%
Antimony oxide Sb
2O
30.5%-15%
Cobalt oxide Co
3O
40.15%-4%
Manganese carbonate MnCO
30.2%-1%
Chromium oxide Cr
2O
30.6%-1.2%
The oxidation nickel
2O
30.1%-5%
Aluminum nitrate Al (NO
3)
39H
2O 0.0005%-8%
Silver nitrate AgNO
30.0005%-6%
Boric acid H
2BO
30.01%-12%
Barium titanate BaTiO
30.01%-10%;
(2) get described ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer is mixed into the system band slurry that viscosity is 20-500PaS, wherein solvent is the mixture or the dimethylbenzene of mixture, n-propyl acetate and the absolute ethyl alcohol of n-propyl acetate and isobutanol; Get described piezo-resistance film powder and adhesive, solvent, the abundant ball milling of plasticizer is mixed into the printing slurry that viscosity is 200-1000PaS, wherein solvent is mixture, terpinol or the butyl carbitol of mixture, butyl glycol ether and the butyl carbitol of terpinol and ethanol; Get the printing slurry that ceramic diaphragm powder and adhesive, solvent, the abundant ball milling of plasticizer are mixed into 200-1000PaS, wherein solvent is mixture, terpinol or the butyl carbitol of mixture, butyl glycol ether and the butyl carbitol of terpinol and ethanol;
(3) will make band slurry curtain coating and become strip, and dry for standby;
(4) adopt in the step (3) the gained strip to make lower cover, under cover the piezo-resistance unit be set, be included in down and cover the electrode size that pattern is set in printing, dry then; Adopt the printing of the middle gained piezo-resistance film printing of step (2) slurry to cover on the interior electrode pattern oven dry then; Drying behind the double exposure electrode size again on the piezo-resistance film; Dry then the interior electrode and the piezo-resistance film both sides of adopting the middle gained pottery of step (2) diaphragm printing slurry cover to be imprinted on double exposure;
(5) make loam cake and it is carried out hot water with the lower cover that is provided with the piezo-resistance unit all press, get single ceramics through cutting, binder removal, sintering, chamfering then;
(6) with the ceramics after the chamfering through upper end electrode, silver ink firing, plating.
5. as the manufacture method of varistor as described in the claim 4, it is characterized in that step (4) also is included in described covering down a plurality of overlapping piezo-resistance unit are set, wherein adjacent cells has that electrode is shared in one.
6. as the manufacture method of varistor as described in the claim 4, it is characterized in that, described piezo-resistance film powder adopt the piezo-resistance membrane material to grind and evenly mix 15-30 hour to particle diameter be 1.0-1.2 μ m, oven dry back 40-100 order sieves and makes.
7. as the manufacture method of varistor as described in the claim 4; it is characterized in that; described ceramic diaphragm powder adopt ceramic diaphragm material to grind and evenly mix 15-30 hour to particle diameter be 1.0-1.2 μ m; oven dry back 40-100 order sieves and makes, and material therefor component and weight percentage thereof are:
Zinc oxide ZnO 60%-82%
Silicon oxide sio
25%-25%
Bismuth oxide Bi
2O
32%-20%
Boron oxide B
2O
31%-15%
Aluminium oxide Al
2O
31%-20%
Calcium oxide CaO 0.05%-15%
Magnesium oxide MgO 0.02%-6%
Manganese carbonate MnCO
32%-7%.
8. as the manufacture method of varistor as described in the claim 4, it is characterized in that both weight ratios are 80-120: 25-50 in the mixed solvent of described n-propyl acetate and isobutanol; Both weight ratios are 80-120: 25-50 in the mixed solvent of described n-propyl acetate and absolute ethyl alcohol.
9. as the manufacture method of claim 4-8 varistor as described in each, it is characterized in that both weight ratios are 80-120: 25-50 in described terpinol and the ethanol mixed solvent; Both weight ratios are 1: 1 in the mixed solvent of described butyl glycol ether and butyl carbitol.
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| CN101620902B (en) * | 2009-07-30 | 2011-06-29 | 深圳振华富电子有限公司 | Lamination type piezoresistor network and making method thereof |
| CN102122553B (en) * | 2010-12-17 | 2013-03-20 | 深圳顺络电子股份有限公司 | Low-resistance-value sheet-type negative-temperature-coefficient thermal resistor with horizontal structure and manufacturing method thereof |
| CN103373847B (en) * | 2012-04-17 | 2015-07-29 | 深圳振华富电子有限公司 | A kind of environment protection water-based ZnO printing slurry and preparation method thereof |
| CN104529434B (en) * | 2014-12-19 | 2016-10-05 | 深圳顺络电子股份有限公司 | A kind of preparation method of chip ceramic PTC thermistor surface protective layer |
| CN106373685A (en) * | 2016-08-29 | 2017-02-01 | 广西新未来信息产业股份有限公司 | Low-voltage voltage-sensitive resistor pack and fabrication method thereof |
| CN106205918A (en) * | 2016-09-19 | 2016-12-07 | 苏州闪联高压电器有限公司 | Anticorrosion spark gap |
| CN110911073B (en) * | 2019-11-14 | 2021-04-23 | 深圳顺络电子股份有限公司 | Laminated chip piezoresistor and manufacturing method thereof |
| CN112951533B (en) * | 2019-12-10 | 2022-08-23 | 广州创天电子科技有限公司 | Preparation method of high-voltage piezoresistor and high-voltage piezoresistor |
| JP7322793B2 (en) * | 2020-04-16 | 2023-08-08 | Tdk株式会社 | Chip varistor manufacturing method and chip varistor |
| CN115073163B (en) * | 2022-07-01 | 2023-09-01 | 深圳振华富电子有限公司 | Chip piezoresistor and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1165125A (en) * | 1995-08-31 | 1997-11-19 | 松下电器产业株式会社 | Zinc oxide ceramics composition and its manufacture method and zinc oxide nonlinear resistance |
-
2007
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1165125A (en) * | 1995-08-31 | 1997-11-19 | 松下电器产业株式会社 | Zinc oxide ceramics composition and its manufacture method and zinc oxide nonlinear resistance |
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