JP2000306762A - Multilayer ceramic capacitor - Google Patents
Multilayer ceramic capacitorInfo
- Publication number
- JP2000306762A JP2000306762A JP11443799A JP11443799A JP2000306762A JP 2000306762 A JP2000306762 A JP 2000306762A JP 11443799 A JP11443799 A JP 11443799A JP 11443799 A JP11443799 A JP 11443799A JP 2000306762 A JP2000306762 A JP 2000306762A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic capacitor
- multilayer ceramic
- electrode layer
- internal electrode
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は積層セラミックコン
デンサ、特に高周波領域で使用される積層セラミックコ
ンデンサに関するものである。The present invention relates to a multilayer ceramic capacitor, and more particularly to a multilayer ceramic capacitor used in a high frequency range.
【０００２】[0002]
【従来の技術】図１は一般的な積層セラミックコンデン
サの断面を示したものである。2. Description of the Related Art FIG. 1 shows a cross section of a general multilayer ceramic capacitor.
【０００３】図１のように積層セラミックコンデンサ
は、誘電体層１と内部電極層２が交互に積層された素子
であり、かつ素子の両端で、内部電極層２を交互に接続
している一対の端子電極３とから構成されている。As shown in FIG. 1, the multilayer ceramic capacitor is an element in which dielectric layers 1 and internal electrode layers 2 are alternately stacked, and a pair of internal electrodes 2 are alternately connected at both ends of the element. And the terminal electrode 3 of FIG.
【０００４】従来、低容量で温度計数が小さい積層セラ
ミックコンデンサでは、誘電体層１に例えばＢａＯ−Ｎ
ｄ2Ｏ3−ＴｉＯ2を主成分とする誘電体磁気組成物など
焼成温度が１２００℃以上の高温焼結材料が使用され、
また内部電極層２には誘電体磁気組成物の焼成温度の関
係から、パラジウムのような融点の高い貴金属材料が使
用されてきた。また内部電極層２の厚みは、価格あるい
は構造欠陥を防止する観点から、３μｍ以下と薄く抑え
られてきた。Conventionally, in a multilayer ceramic capacitor having a low capacitance and a small temperature coefficient, for example, BaO-N
A high-temperature sintering material having a sintering temperature of 1200 ° C. or more, such as a dielectric magnetic composition containing d 2 O 3 —TiO 2 as a main component, is used.
In addition, a noble metal material having a high melting point, such as palladium, has been used for the internal electrode layer 2 because of the firing temperature of the dielectric magnetic composition. Further, the thickness of the internal electrode layer 2 has been suppressed to a small value of 3 μm or less from the viewpoint of cost or prevention of structural defects.
【０００５】[0005]
【発明が解決しようとする課題】ところで近年、携帯電
話など高周波領域の電磁波を利用する通信システムの進
展が著しい。この進展に伴い、積層セラミックコンデン
サに対しても高周波領域への対応が求められており、特
にＱ値を高める必要がある。Ｑ値を高めるためには、内
部電極層２の高周波領域における電気抵抗値を小さくす
る必要があるが、従来の積層セラミックコンデンサでは
内部電極層２の厚みは一般的に３μｍ以下と薄く、また
内部電極層２に電気抵抗が比較的大きいパラジウムを用
いているため、例えば静電容量３．０ｐＦの積層セラミ
ックコンデンサの周波数１ＧＨｚにおけるＱ値は、せい
ぜい２００程度と低い。In recent years, communication systems utilizing electromagnetic waves in a high-frequency region such as mobile phones have made remarkable progress. With this development, multilayer ceramic capacitors are also required to be compatible with a high frequency region, and in particular, it is necessary to increase the Q value. In order to increase the Q value, it is necessary to reduce the electric resistance of the internal electrode layer 2 in a high frequency region. However, in the conventional multilayer ceramic capacitor, the thickness of the internal electrode layer 2 is generally as thin as 3 μm or less. Since palladium having relatively large electric resistance is used for the electrode layer 2, the Q value at a frequency of 1 GHz of a multilayer ceramic capacitor having a capacitance of, for example, 3.0 pF is as low as about 200 at most.
【０００６】本発明は前記従来の問題を解決するため、
特に高周波領域において高いＱ値を有する積層セラミッ
クコンデンサを提供することを目的としている。The present invention solves the above-mentioned conventional problems.
In particular, it is an object of the present invention to provide a multilayer ceramic capacitor having a high Q value in a high frequency region.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に本発明は、誘電体層と内部電極層を備えた積層セラミ
ックコンデンサにおいて、内部電極層の厚みを１２μｍ
以上とした構成、あるいは内部電極層の主成分を銀また
は銅とし、かつ内部電極層の厚みを９μｍ以上とした構
成である。この構成により、内部電極層の電気抵抗値を
下げ、特に高周波領域で高いＱ値を有する積層セラミッ
クコンデンサを得ることができる。According to the present invention, there is provided a multilayer ceramic capacitor having a dielectric layer and an internal electrode layer, the internal electrode layer having a thickness of 12 μm.
The above configuration or a configuration in which the main component of the internal electrode layer is silver or copper and the thickness of the internal electrode layer is 9 μm or more. With this configuration, it is possible to reduce the electric resistance value of the internal electrode layer and obtain a multilayer ceramic capacitor having a high Q value particularly in a high frequency region.
【０００８】[0008]
【発明の実施の形態】本発明の請求項１に記載の発明
は、誘電体層と内部電極層を備えた積層セラミックコン
デンサにおいて、内部電極層の厚みを１２μｍ以上とし
たものであり、高周波領域において高いＱ値を有する積
層セラミックコンデンサを得ることができるという作用
を有する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a multilayer ceramic capacitor having a dielectric layer and an internal electrode layer, wherein the thickness of the internal electrode layer is set to 12 μm or more, In this case, a multilayer ceramic capacitor having a high Q value can be obtained.
【０００９】本発明の請求項２に記載の発明は、誘電体
層と内部電極層を備えた積層セラミックコンデンサにお
いて、内部電極層の主成分を銀または銅とし、かつ厚み
を９μｍ以上としたものであり、高周波領域において高
いＱ値を有するセラミックコンデンサを得ることができ
るという作用を有する。According to a second aspect of the present invention, there is provided a multilayer ceramic capacitor having a dielectric layer and an internal electrode layer, wherein the main component of the internal electrode layer is silver or copper and the thickness is 9 μm or more. This has the effect that a ceramic capacitor having a high Q value in a high frequency region can be obtained.
【００１０】請求項３に記載の発明は、誘電体層をＢｉ
2Ｏ3、Ｎｂ2Ｏ5を主成分とする誘電体磁気組成物とした
ものであり、高周波領域において極めて高いＱ値を有
し、かつ静電容量の温度計数が小さい積層セラミックコ
ンデンサを得ることができるという作用を有する。According to a third aspect of the present invention, the dielectric layer is made of Bi.
A dielectric ceramic composition containing 2 O 3 and Nb 2 O 5 as main components, to obtain a multilayer ceramic capacitor having an extremely high Q value in a high frequency region and a small temperature coefficient of capacitance. It has the effect of being able to.
【００１１】請求項４に記載の発明は、誘電体層をＢｉ
2Ｏ3、ＣａＯ、Ｎｂ2Ｏ5を主成分とする誘電体磁気組成
物としたものであり、高周波領域において極めて高いＱ
値を有し、かつ静電容量の温度計数が小さい積層セラミ
ックコンデンサを得ることができるという作用を有す
る。According to a fourth aspect of the present invention, the dielectric layer is made of Bi.
This is a dielectric magnetic composition containing 2 O 3 , CaO, and Nb 2 O 5 as main components, and has a very high Q in a high frequency region.
This has the effect that a multilayer ceramic capacitor having a small value and a small temperature coefficient of capacitance can be obtained.
【００１２】請求項５に記載の発明は、誘電体層をＢｉ
2Ｏ3、ＣａＯ、ＺｎＯ、Ｎｂ2Ｏ5を主成分とする誘電体
磁気組成物としたものであり、高周波領域において極め
て高いＱ値を有し、かつ静電容量の温度計数が小さい積
層セラミックコンデンサを得ることができるという作用
を有する。According to a fifth aspect of the present invention, the dielectric layer is made of Bi.
Multilayer ceramic having a dielectric magnetic composition containing 2 O 3 , CaO, ZnO, and Nb 2 O 5 as main components, having an extremely high Q value in a high frequency range and a small temperature coefficient of capacitance. It has the effect that a capacitor can be obtained.
【００１３】請求項６に記載の発明は、誘電体層をＢａ
Ｏ、Ｒｅ2Ｏ5（ＲｅはＮｄ，Ｓｍから選ばれる少なくと
も一種類）、ＴｉＯ2およびガラスを主成分とする誘電
体磁気組成物としたものであり、高周波領域において極
めて高いＱ値を有し、かつ静電容量の温度計数が小さい
積層セラミックコンデンサを得ることができるという作
用を有する。According to a sixth aspect of the present invention, the dielectric layer is made of Ba.
O, Re 2 O 5 (where Re is at least one selected from Nd and Sm), a dielectric magnetic composition containing TiO 2 and glass as main components, and having an extremely high Q value in a high frequency region. In addition, there is an effect that a multilayer ceramic capacitor having a small capacitance temperature coefficient can be obtained.
【００１４】請求項７に記載の発明は、誘電体層をＡｌ
2Ｏ3、Ｌｎ2Ｏ5（ＬｎはＬａ，Ｃｅ，Ｎｄ，Ｓｍ，Ｅ
ｕ，Ｇｄ，Ｔｂから選ばれる少なくとも一種類）、Ｍｇ
Ｏおよびガラスを主成分とする誘電体磁気組成物とした
ものであり、高周波領域において極めて高いＱ値を有
し、かつ静電容量の温度計数が小さい積層セラミックコ
ンデンサを得ることができるという作用を有する。According to a seventh aspect of the present invention, the dielectric layer is made of Al.
2 O 3 , Ln 2 O 5 (Ln is La, Ce, Nd, Sm, E
u, Gd, Tb), Mg
This is a dielectric magnetic composition containing O and glass as main components, and has an extremely high Q value in a high-frequency region and an effect of obtaining a multilayer ceramic capacitor having a small temperature coefficient of capacitance. Have.
【００１５】次に、本発明の具体的な実施の形態につい
て述べる。積層セラミックコンデンサとしての構成は図
１に示すものとほとんど同一のため同じ符号を用いて説
明する。Next, specific embodiments of the present invention will be described. Since the configuration of the multilayer ceramic capacitor is almost the same as that shown in FIG. 1, the description will be made using the same reference numerals.
【００１６】誘電体層１を構成する誘電体磁気組成物
は、ＢａＯ，Ｎｄ2Ｏ5，ＴｉＯ2，Ｓｍ2Ｏ3を主成分と
する系（以下ＢＮＴと記す）、Ｂｉ2Ｏ3，Ｎｂ2Ｏ5を主
成分とする系（以下ＢＮと記す）、Ｂｉ2Ｏ3，ＣａＯ，
Ｎｂ2Ｏ5を主成分とする系（以下ＢＣＮと記す）、Ｂｉ
2Ｏ3，ＣａＯ，ＺｎＯ，Ｎｂ2Ｏ5を主成分とする系（以
下ＢＣＺＮと記す）、ＢａＯ，Ｎｄ2Ｏ5，ＴｉＯ2，Ｓ
ｍ2Ｏ3を主成分とするセラミック粉末にＰｂＯ，ＳｉＯ
2，Ｂ2Ｏ3を主成分とするガラスを混合した系（以下Ｂ
ＮＴＧと記す）、Ａｌ2Ｏ3，ＭｇＯ，Ｓｍ2Ｏ3を主成分
とするセラミック粉末にＰｂＯ，ＳｉＯ2，Ｂ2Ｏ3を主
成分とするガラスを混合した系（以下ＡＭＳＧと記す）
の六種類である。The dielectric magnetic composition constituting the dielectric layer 1 includes a system mainly composed of BaO, Nd 2 O 5 , TiO 2 , and Sm 2 O 3 (hereinafter referred to as BNT), Bi 2 O 3 , Nb A system containing 2 O 5 as a main component (hereinafter referred to as BN), Bi 2 O 3 , CaO,
A system containing Nb 2 O 5 as a main component (hereinafter referred to as BCN), Bi
A system mainly composed of 2 O 3 , CaO, ZnO, and Nb 2 O 5 (hereinafter referred to as BCZN), BaO, Nd 2 O 5 , TiO 2 , S
PbO, SiO 2 is added to ceramic powder containing m 2 O 3 as a main component.
2 , B 2 O 3 mixed glass (hereinafter referred to as B
NTG), a system in which a glass mainly containing PbO, SiO 2 and B 2 O 3 is mixed with a ceramic powder mainly containing Al 2 O 3 , MgO and Sm 2 O 3 (hereinafter referred to as AMSG)
There are six types.
【００１７】（表１）は各誘電体磁気組成物の焼成温度
範囲と高周波帯域における電気特性を示したものであ
る。ＢＮＴは焼成温度が約１３００℃と高いため、内部
電極層２にはパラジウムなどを主成分とする低導電率で
高融点の金属しか用いることができない。一方ＢＮ，Ｂ
ＣＮ，ＢＣＺＮ，ＢＮＴＧ，ＡＭＳＧの焼成温度はいず
れも１１００℃以下と低いため、銀、銅を主成分とする
高導電率で低融点の金属も使用できる。Table 1 shows the firing temperature range of each dielectric magnetic composition and the electrical characteristics in a high frequency band. Since the baking temperature of BNT is as high as about 1300 ° C., only a low-conductivity and high-melting-point metal mainly composed of palladium or the like can be used for the internal electrode layer 2. On the other hand, BN, B
Since the firing temperature of CN, BCZN, BNTG, and AMSG is as low as 1100 ° C. or less, a metal having a high conductivity and a low melting point containing silver and copper as main components can also be used.
【００１８】[0018]
【表１】 [Table 1]
【００１９】これらの各誘電体粉末を酢酸ブチルにジブ
チルフタレート、ポリビニルブチラール樹脂を溶かした
溶液中に加え、ボールミルで２４時間混合した。得られ
たスラリーからドクターブレード法などにより厚さ約４
０μｍの誘電体グリーンシートを得た。Each of these dielectric powders was added to a solution of dibutyl phthalate and polyvinyl butyral resin in butyl acetate, and mixed in a ball mill for 24 hours. A thickness of about 4 is obtained from the obtained slurry by a doctor blade method or the like.
A 0 μm dielectric green sheet was obtained.
【００２０】一方、銀、銅、パラジウム各金属粉末と、
エチルセルロースをブチルカルビトールに溶解させたビ
ヒクルを混合し、更に三本ロールミルを用いて混練する
ことによって内部電極層用の導電性ペーストを得た。On the other hand, silver, copper and palladium metal powders,
A vehicle in which ethyl cellulose was dissolved in butyl carbitol was mixed and kneaded using a three-roll mill to obtain a conductive paste for an internal electrode layer.
【００２１】上記グリーンシートの表面にこの導電ペー
ストを矩形状の内部電極パターンを有するスクリーン版
を用いて印刷し、乾燥させた。このとき内部電極層２の
厚みを、スクリーン版の製版条件、導電性ペーストの金
属粉末の粒径、金属粉末とビヒクルの混合比率およびペ
ースト粘度を調整することにより変化させた。This conductive paste was printed on the surface of the green sheet using a screen plate having a rectangular internal electrode pattern, and dried. At this time, the thickness of the internal electrode layer 2 was changed by adjusting the plate making conditions of the screen plate, the particle diameter of the metal powder of the conductive paste, the mixing ratio of the metal powder and the vehicle, and the paste viscosity.
【００２２】次に図１に示した構成となるようグリーン
シートと内部電極層２を積層する。すなわち、内部電極
層２が印刷されていないグリーンシートを複数枚積層し
た後、内部電極層２が印刷されたグリーンシートを位置
をあわせながら複数枚交互に積層し、さらに内部電極層
２が印刷されていないグリーンシートを複数枚積層し
た。この積層ブロックを４０℃の温度で３００ｋｇ／ｃ
ｍ2の圧力により圧着し、格子状に切断した。なお焼成
後の静電容量が約３．０ｐＦとなるよう、積層数と内部
電極層２の重なり面積を調整した。Next, the green sheet and the internal electrode layer 2 are laminated so as to have the structure shown in FIG. That is, after laminating a plurality of green sheets on which the internal electrode layers 2 are not printed, a plurality of the green sheets on which the internal electrode layers 2 are printed are alternately laminated while aligning the positions, and further the internal electrode layers 2 are printed. Green sheets were stacked. 300 kg / c at 40 ° C.
It was crimped under a pressure of m 2 and cut into a grid. The number of layers and the overlapping area of the internal electrode layers 2 were adjusted so that the capacitance after firing was about 3.0 pF.
【００２３】内部電極層２に銅を用いた素子は窒素−水
蒸気雰囲気で、銀、パラジウムを用いた素子は大気雰囲
気中で６００℃−２時間処理して有機バインダを焼却
し、その後窒素雰囲気に切り替え、各誘電体磁気組成物
に適した温度まで昇温し、２時間保持することにより焼
成した。A device using copper for the internal electrode layer 2 is treated in a nitrogen-water vapor atmosphere, and a device using silver and palladium is treated at 600 ° C. for 2 hours in an air atmosphere to incinerate the organic binder, and then to a nitrogen atmosphere. Switching was performed, the temperature was raised to a temperature suitable for each dielectric magnetic composition, and firing was performed by holding for 2 hours.
【００２４】この焼成体素子の側面に、銀あるいは銅と
ガラスフリット、ビヒクルからなる端子電極用導電ペー
ストを塗布して焼き付け、端子電極３を形成した。A terminal electrode 3 was formed by applying and baking a terminal electrode conductive paste made of silver or copper, glass frit and vehicle on the side surface of the fired device.
【００２５】（表２）は上述の工程で作製した積層セラ
ミックコンデンサの誘電体材料、内部電極材料と焼成後
の厚みおよび各電気特性を示したものである。なお内部
電極層２の厚みは、素子の断面を研磨し光学顕微鏡で観
察することにより測定した。また積層セラミックコンデ
ンサの１ＧＨｚにおける容量値およびＱ値は、インピー
ダンスアナライザを用いて測定した。Table 2 shows the dielectric material, the internal electrode material, the thickness after firing, and the respective electrical characteristics of the multilayer ceramic capacitor manufactured in the above-described steps. Note that the thickness of the internal electrode layer 2 was measured by polishing a cross section of the element and observing it with an optical microscope. The capacitance value and Q value of the multilayer ceramic capacitor at 1 GHz were measured using an impedance analyzer.
【００２６】[0026]
【表２】 [Table 2]
【００２７】試料番号１のように誘電体層１がＢＮＴ、
内部電極層２がパラジウム、その厚みが３μｍと言う従
来の積層セラミックコンデンサでは、容量値３．０ｐＦ
におけるＱ値は１９０と低いが、内部電極層２を厚くす
るとＱ値は上昇し、試料番号３のように１２μｍとなる
とＱ値は４００に達する。As shown in Sample No. 1, the dielectric layer 1 is made of BNT,
In a conventional multilayer ceramic capacitor in which the internal electrode layer 2 is palladium and its thickness is 3 μm, the capacitance value is 3.0 pF.
Is as low as 190, but as the internal electrode layer 2 is made thicker, the Q value rises, and reaches 12 at 12 μm as in Sample No. 3, and reaches 400.
【００２８】また、試料番号４〜６のように誘電体層１
がＢＣＮ、内部電極層２が銀の場合、電極厚みが５μｍ
と本発明の範囲外のＱ値は２８０とやや低いが、９μｍ
以上とすることにより４００を越えるようになる。As shown in Sample Nos. 4 to 6, the dielectric layer 1
Is BCN and the internal electrode layer 2 is silver, the electrode thickness is 5 μm
And the Q value outside the range of the present invention is slightly lower at 280, but 9 μm
By doing so, the number exceeds 400.
【００２９】また、試料番号７，８のように内部電極層
２が銅の場合、試料番号９〜１４のように誘電体層１を
ＢＮ，ＢＣＺＮ，ＢＮＴＧ，ＡＭＳＧとした場合におい
ても、内部電極層２が銀、銅の場合はその厚みが９μｍ
以上、パラジウムの場合は１２μｍ以上であれば、容量
値３．０ｐＦにおけるＱ値は４００以上と大きな値が得
られる。Further, even when the internal electrode layer 2 is made of copper as in Sample Nos. 7 and 8, the dielectric layer 1 is made of BN, BCZN, BNTG and AMSG as in Sample Nos. 9 to 14, When the layer 2 is silver or copper, its thickness is 9 μm.
As described above, in the case of palladium, if it is 12 μm or more, the Q value at a capacitance value of 3.0 pF is as large as 400 or more.
【００３０】また、誘電体層１にＢＮ，ＢＣＺＮ，ＢＮ
ＴＧ，ＡＭＳＧを用いた積層セラミックコンデンサは、
焼成温度が低いため内部電極層２に導電率の高い銀ある
いは銅を使用できるだけでなく、静電容量の温度係数が
いずれも±６０ｐｐｍ／℃以内と小さく、極めて電気特
性の優れた積層セラミックコンデンサが得られた。Further, BN, BCZN, BN
Multilayer ceramic capacitors using TG and AMSG
Since the firing temperature is low, not only can silver or copper having high conductivity be used for the internal electrode layer 2, but also the temperature coefficient of capacitance is as small as ± 60 ppm / ° C. or less, and a multilayer ceramic capacitor having extremely excellent electric characteristics can be obtained. Obtained.
【００３１】なお、上述の実施の形態は一例であり、実
施の形態に限定されるものではない。例えば誘電体層１
に使用可能な他の材料として、金や白金などを挙げるこ
とができ、また誘電体層１に使用可能な他の材料とし
て、ＭｇＯ−ＣａＯ−ＴｉＯ2系などが挙げられる。The above embodiment is an example, and the present invention is not limited to the embodiment. For example, dielectric layer 1
Examples of other materials that can be used for the dielectric layer include gold and platinum, and examples of other materials that can be used for the dielectric layer 1 include an MgO—CaO—TiO 2 system.
【００３２】[0032]
【発明の効果】以上説明したように本発明によれば、内
部電極層の厚みを１２μｍ以上とした構成あるいは内部
電極層の主成分を銀または銅とし、かつ内部電極層の厚
みを９μｍ以上とした構成により、内部電極層の電気抵
抗値を下げ、高周波領域で極めて高いＱ値を有する積層
セラミックコンデンサを得ることができる。As described above, according to the present invention, the internal electrode layer has a thickness of 12 μm or more, or the main component of the internal electrode layer is silver or copper, and the internal electrode layer has a thickness of 9 μm or more. With this configuration, it is possible to reduce the electric resistance of the internal electrode layer and obtain a multilayer ceramic capacitor having an extremely high Q value in a high frequency region.
【００３３】さらに本発明の好ましい例によれば、高周
波領域で高いＱ値を有し、かつ静電容量値の温度係数が
±６０ｐｐｍ／℃以内と小さい積層セラミックコンデン
サを得ることができる。Further, according to the preferred embodiment of the present invention, it is possible to obtain a multilayer ceramic capacitor having a high Q value in a high frequency region and a small temperature coefficient of the capacitance value within ± 60 ppm / ° C.
【図１】一般的な積層コンデンサの断面図FIG. 1 is a cross-sectional view of a general multilayer capacitor.
１ 誘電体層 ２ 内部電極層 ３ 端子電極 Reference Signs List 1 dielectric layer 2 internal electrode layer 3 terminal electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 加賀田 博司 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5E001 AB03 AC09 AC10 AE00 AE02 AE03 AE04 AF00 AF06 AH01 AH05 AH09 AJ01 5E082 AA01 AB03 BB05 BC40 EE04 EE23 EE26 EE35 FG06 FG22 FG25 FG26 FG27 FG54 GG10 GG11 GG28 HH43 JJ03 JJ12 JJ23 LL02 MM22 MM24 PP09 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroshi Kagata 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd.F-term (reference) BB05 BC40 EE04 EE23 EE26 EE35 FG06 FG22 FG25 FG26 FG27 FG54 GG10 GG11 GG28 HH43 JJ03 JJ12 JJ23 LL02 MM22 MM24 PP09
Claims (7)
ミックコンデンサにおいて、内部電極層の厚みを１２μ
ｍ以上とした積層セラミックコンデンサ。In a multilayer ceramic capacitor having a dielectric layer and an internal electrode layer, the internal electrode layer has a thickness of 12 μm.
m or more.
ミックコンデンサにおいて、内部電極層の主成分が銀ま
たは銅であり、かつ厚みを９μｍ以上とした積層セラミ
ックコンデンサ。2. A multilayer ceramic capacitor comprising a dielectric layer and an internal electrode layer, wherein the main component of the internal electrode layer is silver or copper and the thickness is 9 μm or more.
とする誘電体磁気組成物とした請求項１または２に記載
の積層セラミックコンデンサ。3. The multilayer ceramic capacitor according to claim 1, wherein the dielectric layer is a dielectric magnetic composition containing Bi 2 O 3 and Nb 2 O 5 as main components.
を主成分とする誘電体磁気組成物とした請求項１または
２に記載の積層セラミックコンデンサ。4. The dielectric layer is made of Bi 2 O 3 , CaO, Nb 2 O 5
3. The multilayer ceramic capacitor according to claim 1, wherein the dielectric ceramic composition is mainly composed of:
Ｎｂ2Ｏ5を主成分とする誘電体磁気組成物とした請求項
１または２に記載の積層セラミックコンデンサ。5. The dielectric layer is made of Bi 2 O 3 , CaO, ZnO,
The multilayer ceramic capacitor according to claim 1 or 2 as a dielectric magnetic composition whose main component is nb 2 O 5.
ｄ，Ｓｍから選ばれる少なくとも一種類）、ＴｉＯ2お
よびガラスを主成分とする誘電体磁気組成物とした請求
項１または２に記載の積層セラミックコンデンサ。6. The dielectric layer is made of BaO, Re 2 O 5 (Re is N
3. The multilayer ceramic capacitor according to claim 1, wherein the dielectric ceramic composition comprises at least one of d and Sm), TiO 2, and glass.
Ｌａ，Ｃｅ，Ｎｄ，Ｓｍ，Ｅｕ，Ｇｄ，Ｔｂから選ばれ
る少なくとも一種類）、ＭｇＯおよびガラスを主成分と
する誘電体磁気組成物とした請求項１または２に記載の
積層セラミックコンデンサ。7. The dielectric layer is mainly composed of Al 2 O 3 , Ln 2 O 5 (Ln is at least one selected from La, Ce, Nd, Sm, Eu, Gd and Tb), MgO and glass. 3. The multilayer ceramic capacitor according to claim 1, wherein the multilayer ceramic capacitor is a dielectric magnetic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11443799A JP2000306762A (en) | 1999-04-22 | 1999-04-22 | Multilayer ceramic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11443799A JP2000306762A (en) | 1999-04-22 | 1999-04-22 | Multilayer ceramic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000306762A true JP2000306762A (en) | 2000-11-02 |
Family
ID=14637720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11443799A Pending JP2000306762A (en) | 1999-04-22 | 1999-04-22 | Multilayer ceramic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000306762A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7098160B2 (en) * | 2003-08-07 | 2006-08-29 | Matsushita Electric Industrial Co., Ltd. | Dielectric ceramic composition and ceramic electronic component employing the same |
| DE10325008B4 (en) * | 2003-06-03 | 2007-11-22 | Epcos Ag | Electrical component and its manufacture |
| CN100383899C (en) * | 2003-01-30 | 2008-04-23 | 广东风华高新科技股份有限公司 | High-frequency chip multilayer ceramic capacitor and method for making same |
| US8576538B2 (en) | 2011-01-28 | 2013-11-05 | Murata Manuacturing Co., Ltd. | Electronic component and substrate module |
| JP2015176912A (en) * | 2014-03-13 | 2015-10-05 | エナジー・ストレージ・マテリアルズ合同会社 | Solid ion capacitor and manufacturing method thereof |
| JP2015176911A (en) * | 2014-03-13 | 2015-10-05 | エナジー・ストレージ・マテリアルズ合同会社 | Solid ion capacitor, and manufacturing method thereof |
| US10117333B2 (en) | 2015-01-31 | 2018-10-30 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor, mounting structure of multilayer ceramic capacitor, and taped electronic component array |
| US10892102B2 (en) | 2017-12-07 | 2021-01-12 | Taiyo Yuden Co., Ltd. | Multi-layer ceramic capacitor |
-
1999
- 1999-04-22 JP JP11443799A patent/JP2000306762A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100383899C (en) * | 2003-01-30 | 2008-04-23 | 广东风华高新科技股份有限公司 | High-frequency chip multilayer ceramic capacitor and method for making same |
| DE10325008B4 (en) * | 2003-06-03 | 2007-11-22 | Epcos Ag | Electrical component and its manufacture |
| US7098160B2 (en) * | 2003-08-07 | 2006-08-29 | Matsushita Electric Industrial Co., Ltd. | Dielectric ceramic composition and ceramic electronic component employing the same |
| US8576538B2 (en) | 2011-01-28 | 2013-11-05 | Murata Manuacturing Co., Ltd. | Electronic component and substrate module |
| JP2015176912A (en) * | 2014-03-13 | 2015-10-05 | エナジー・ストレージ・マテリアルズ合同会社 | Solid ion capacitor and manufacturing method thereof |
| JP2015176911A (en) * | 2014-03-13 | 2015-10-05 | エナジー・ストレージ・マテリアルズ合同会社 | Solid ion capacitor, and manufacturing method thereof |
| US10117333B2 (en) | 2015-01-31 | 2018-10-30 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor, mounting structure of multilayer ceramic capacitor, and taped electronic component array |
| US10892102B2 (en) | 2017-12-07 | 2021-01-12 | Taiyo Yuden Co., Ltd. | Multi-layer ceramic capacitor |
| US11367575B2 (en) | 2017-12-07 | 2022-06-21 | Taiyo Yuden Co., Ltd. | Multi-layer ceramic capacitor |
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