CN100383899C - High-frequency chip multilayer ceramic capacitor and method for making same - Google Patents
High-frequency chip multilayer ceramic capacitor and method for making same Download PDFInfo
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- CN100383899C CN100383899C CNB031137180A CN03113718A CN100383899C CN 100383899 C CN100383899 C CN 100383899C CN B031137180 A CNB031137180 A CN B031137180A CN 03113718 A CN03113718 A CN 03113718A CN 100383899 C CN100383899 C CN 100383899C
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Abstract
The present invention relates to a high-frequency chip multilayer ceramic capacitor and a production method. The present invention comprises a nickel or nickel alloy inner electric pole (1), dielectric layers (2) and a copper or copper alloy end electric pole (3), wherein the dielectric layers (2) and the inner electric pole are laminated in a crossing manner; the copper or copper alloy end electric pole (3) is connected with the guided inner electric pole (1); the dielectric layers (2) with 20 to 1000 layers adopt anti-reducing ceramic materials with high frequency characteristics, and after burning, the thickness of the dielectric layers is from 0.8 to 25 mu m; after burning, the thickness of the inner electric pole (1) is from 0.6 to 2.0 mu m. The present invention can produce the high-frequency chip multilayer ceramic capacitor with more and thin layers, can greatly lower production cost, and have favorable dielectric properties.
Description
Technical field
The present invention relates to a kind of high-frequency multilayer chip ceramic capacitor and manufacture method thereof, more particularly, the present invention relates to a kind of with nickel or nickel alloy as high-frequency multilayer chip ceramic capacitor of interior electrode and preparation method thereof.
Background technology
High frequency (NPO) multilayer ceramic capacitor (MLCC) volume is little, reliability is high, mount convenience, and have wide, the characteristics such as the volume change rate is low, stable performance of operating temperature range, in high-frequency, low-loss circuit such as mobile phone, BB machine, cordless telephone, intercom, VCD, DVD, video tape recorder, sound equipment, television set, circuit main card plate, obtained extensive use.
It is interior electrode that traditional high frequency (NPO) multilayer ceramic capacitor (MLCC) adopts precious metals ag/Pd material, pass through screen printing technique, the pulp layer of electrode in forming is printed on the dielectric layer, alternative stacked, and through compacting, cutting back formation green compact, base substrate and interior electrode are at high temperature burnt altogether, the end-blocking electrode slurry is made into the element with internal and external electrode through Overheating Treatment more subsequently again.Low fever's system in the general employing of this type of capacitor, its inside and outside electrode all adopts inactive noble metal to make, and binder removal, sintering and burning end process can be carried out in air, and raw material are made simpler, the binder removal operation can be finished at lower temperature and short time, and efficient is high and energy resource consumption is low.But, use the interior electrode of Ag/Pd must cause higher production cost, the reliability of products aspect is also relatively poor.
If with base metal nickel or the nickel alloy interior electrode as multiple-layer sheet ceramic capacitor, copper or copper alloy have very big benefit as termination electrode to reducing the MLCC production cost of products.On the one hand, adopt base metal Ni to substitute the interior electrode of precious metals ag/Pd as MLCC, the Ni higher cost performance of comparing with Ag/Pd, the electromigration speed of Ni atom or atomic group is all little than Ag and Pd/Ag, printing 20mm is long on ceramic substrate, 0.3mm wide, the gap is that the different electrodes of 0.2mm are done the electromigration experiment, the good electrical chemical stability of Ni electrode is more favourable to improving capacitor performance; Metal Ni is poorer slightly than the conductivity of Ag/Pd, may have influence on the conductivity of MLCC electrode, thereby has influence on the quality factor (Q value) of product, but experimental results show that the Q value of product after the Ni electrode reaches certain thickness can be guaranteed fully; On the other hand, the external electrode of MLCC adopts metallic copper or copper alloy, because Ni is adjacent with the Cu atomic number, atomic radius is close, its physics, chemical characteristic are also similar, so the two can be combined closely and becomes one when burning end, make inside and outside electrode connect, the termination pulling force height and the equivalent series resistance (ESR) that have guaranteed product are low, thereby guarantee that product has good reliability.But oxidized for electrode in preventing, must in reducing atmosphere, carry out sintering processes.Traditional multiple-layer sheet ceramic capacitor has with dielectric material that sintering is reduced into semi-conductive characteristic under reducing atmosphere, and its production technology can not satisfy with base metal nickel makes requirement as the multiple-layer sheet ceramic capacitor of interior electrode.
Summary of the invention
The objective of the invention is at above-mentioned the deficiencies in the prior art, a kind of high-frequency multilayer chip ceramic capacitor with high reliability is provided, this capacitor uses Ni or Ni alloy as interior electrode, greatly reduces production cost, and has excellent dielectric properties.
Another object of the present invention provides a kind of manufacture method of making the high-frequency ceramic capacitor.
High-frequency multilayer chip ceramic capacitor of the present invention, comprise: electrode (1) in the Ni, with the dielectric layer (2) of interior electrode crossing lamination and the Cu termination electrode (3) that is connected with the interior electrode (1) of derivation, wherein the number of plies of dielectric layer (2) is 20～1000 layers, thickness is 0.8～25 μ m after the burning of every layer of dielectric layer, in every layer after the burning of electrode (1) thickness be 0.6～2.0 μ m.How many numbers of plies of dielectric layer (2) decides on the concrete application scenario of ceramic capacitor.
In the present invention, can adopt the dielectric material (porcelain) with resistance to reduction high frequency characteristics when making above-mentioned dielectric layer (2), the main component of this dielectric material is the composite oxides of Ca, Sr, Ti and Zr, and its general formula is Ca
xSr
1-x(Ti
yZr
1-y)
zO
3Represent, 0＜x in the formula＜1,0＜y＜1,0.8＜z＜1.2, and can also comprise in the oxide of Mg, Zn, Si, Mn, Y of 0.1～5wt% one or more with, this dielectric material.Dielectric layer of the present invention has fine structure owing to adopted the resistance to reduction porcelain, the less and good stability of particle behind the sintering, and the space in the ceramic dielectric layer is seldom.
In high-frequency multilayer chip ceramic capacitor of the present invention, interior electrode can adopt base metal to make, and makes as adopting Ni or Ni alloy, and termination electrode then can be made with Cu.With adopting Pd/Ag is that the MLCC product of interior electrode is compared, and when adopting Ni as interior electrode, its rupture strength is bigger, and this helps resisting the mechanical stress effect when assembling and matrix cutting.In addition, used porcelain can be added with H in the dielectric layer of the present invention
2Reducing atmosphere under carry out sintering, thereby therefore ceramic body can not produce serious oxygen loss, occur that the insulation (IR) that the oxygen room causes MLCC descends, loss (DF) is risen and Q value is descended the degradation shortcoming.
On the other hand, the invention still further relates to a kind of method of making the high-frequency multilayer chip ceramic capacitor, this method may further comprise the steps:
(1) it is fully mixed dielectric material barreling a period of time under stable speed, form the porcelain slurry, the porcelain slurry that makes is carried out curtain coating, printing, lamination, lamination cut into raw cook;
(2) with the raw cook that makes at N
2Carry out binder removal under the protection of atmosphere;
(3) with the raw cook behind the binder removal at reproducibility N
2Under 1250～1400 ℃, carry out sintering in the atmosphere; Then, at oxidizability N
2Carry out temper in the atmosphere, obtain the chip behind the sintering;
(4) chip behind the above-mentioned sintering is carried out chamfering, end-blocking;
(5) with the chip behind the above-mentioned end-blocking at N
2Under the atmosphere protection, burn end under 800～1000 ℃ the temperature;
(6) on the termination electrode of gained chip behind the above-mentioned burning end, plate nickel dam and tin layer, make described high frequency chip multilayer ceramic capacitor.
In said method, the sintering circuit in the step (3) is one of most important technology during whole anti-reduction chip multilayer ceramic capacitor is made.Because electrode is metal Ni in of the present invention, (or under oxygen content condition with higher) is easily oxidized and lose electrode conductivuty when heat-treating in air, and therefore, interior electrode needs burn till under the atmosphere of reproducibility (or inertia).But meanwhile, in the dielectric material+Ti of 4 valencys easily is reduced again during sintering under reproducibility (or inertia) atmosphere and becomes+Ti of 3 valencys, changed ceramic crystal structure, makes ceramic dielectric become semiconductor.Therefore, N during sintering
2The control of atmosphere and sintering temperature and curve are extremely important, and to burning till compactness, the dielectric property of back ceramic body, all there is very big influence the capacity of product (C), insulation (IR), loss (DF) and proof voltage aspects such as (BDV).
The choosing of the atmosphere of reproducibility or inertia during sintering, relevant with the porcelain that the material of interior electrode and dielectric layer are used.In the present invention, by at N
2In sneak into an amount of H
2And obtain the N of reproducibility
2Atmosphere.H
2Content generally be controlled at the atmosphere total amount 0.01～5% within, preferably be controlled within 0.2～5%.Certainly, can adopt the reproducibility of other composition or the atmosphere of inertia as the case may be.
Sintering circuit in the step (3) can be divided into heat up section and soak section again.In order to guarantee that electrode is not oxidized in heat up section and soak section, so at N
2The middle H that adds
2In the section that heats up, the raw cook behind the binder removal is at the N of reproducibility
2Be warming up to sintering temperature in the atmosphere; In the soak section, above-mentioned raw cook is at the N of reproducibility
2Under sintering temperature, keep certain hour in the atmosphere, be generally several minutes to tens of hours, be preferably a few hours.Above-mentioned sintering temperature generally is controlled at 1250～1400 ℃, preferably is controlled at 1300～1350 ℃.
In order to reduce the reduction of ceramic dielectric, in guaranteeing under the not oxidized prerequisite of electrode, the N of above-mentioned reproducibility
2H in the atmosphere
2Content unsuitable too high.Tempering process in the step (3) should be at oxidizability N
2Carry out in the atmosphere, promptly at N
2An amount of O of middle adding
2, oxygen is added in the oxygen room that produces when ceramic body is reduced go, reply the dielectric property of ceramic body.The temperature of temper can be 700～1200 ℃, is preferably 900～1100 ℃; The time of temper was generally several minutes to tens of hours, was preferably a few hours.
The oxidizability N of temper
2In the atmosphere, O
2Content also relevant with the used porcelain of the material of interior electrode and dielectric layer.Having listed with Ni in the table 1 is interior electrode and when adopting foregoing dielectric material, and oxygen content is respectively 20,40,60 and the result of 80ppm:
Table 1
As can be seen from Table 1, under the identical situation of other process conditions, only the oxygen content of tempering section is regulated, difference has appearred in resulting properties of product, mainly is interior electrode Ni with due to different variations has taken place under these oxygen contents ceramic body.
Under the 20ppm oxygen content of test 1, interior electrode Ni keeps metallic state, and oxidation does not take place, and the oxygen that ceramic body fails fully the front sintering stage to be lost under this condition recovers, when there is the oxygen room in ceramic body inside, and a part of Ti
4+Become Ti
3+, ceramic body becomes semiconductor, so the IR value of product is lower, can not reach criterion of acceptability.
When the high 80ppm to test 4 of oxygen content, interior electrode part is divided and oxidation has been taken place and lost electric conductivity, the continuity variation of electrode, and the connection of internal and external electrode is variation also, and the DF value of product will uprise, and the capacity of while product also can descend and the numerical value dispersion significantly.The oxygen room of ceramic body then can fully refill, and is reduced into Ti
3+Change back to Ti again
4+, so the IR value of product can reach very high.
It is then more moderate to test 2 and 3 oxygen content, so tempering section oxygen content is preferably 30～70ppm under the above-mentioned condition, electrode Ni was not oxidized in both can having guaranteed under this condition, can fully refill the oxygen that ceramic body loses at sintering stage again simultaneously, can reach best properties of product result.But the present invention is not a oxygen content with the tempering section is limited in 30～70ppm, because along with the adjustment of some process conditions, the oxygen content of tempering section fully may be in the scope of 30～70ppm, and this belongs to protection scope of the present invention.
The N of step (5)
2Burning end operation under the atmosphere protection; the same with the sintering circuit of step (3); be to make one of most critical, most important technology in the making of anti-reduction chip multilayer ceramic capacitor, it has directly determined the success or failure that anti-reduction chip multilayer ceramic capacitor (NPO capacitor) is made.To consider when burning end that Cu powder in the end slurry is not oxidized, the organic resin in the end slurry will fully be got rid of at a lower temperature, the immersion depth of frit in porcelain body etc.Taken into account simultaneously above some just can obtain internal structure densification, electric conductivity good, with the compact termination of ceramic body.
The end slurry mainly is made up of Cu powder, frit, organic resin and organic solvent.Wherein, organic solvent is just discharged in the drying course when end-blocking basically fully, organic resin is a macromolecular material, boiling point and decomposition temperature are all than higher, it just need be discharged when burning end, like this, just burn in the termination of the chip behind the end Cu of remaining conduction only and the vitreum used in conjunction with ceramic body.So, in the burning end operation of step (5), what control is (to be low-temperature space at lower temperature section, the softening temperature of frit is following) time add sufficient oxygen, make that organic resin as much as possible decomposes discharge in the end slurry, and just do not make the termination produce hole when having arrived the high-temperature region frit-sintered.In addition, will guarantee that at high temperature Cu is not oxidized, this just requires its oxygen content low, and considers that simultaneously the oxide in the frit is not reduced, and the Control for Oxygen Content of the highest temperature section of step (5) is moderate.
In general, below 500 ℃ the low-temperature space of step (5), at this temperature section, organic resin decomposes; 500 ℃～firing termination temperature is the high-temperature region of step (5).Firing termination temperature generally is controlled at 700～1100 ℃, is preferably 800～1000 ℃.N in the low-temperature space
2Oxygen content in the atmosphere will be higher than N in the high-temperature region
2Oxygen content in the atmosphere.Generally speaking, at low-temperature space, N
2Oxygen content in the atmosphere is 200～400ppm, is preferably 250～350ppm; In the high-temperature region, N
2Oxygen content in the atmosphere is 2～15ppm, is preferably 5～10ppm.
Description of drawings
Fig. 1 is the major axis profile of high-frequency multilayer chip ceramic capacitor, and each Reference numeral is among the figure:
Electrode in the 1------; The 2------dielectric layer; The 3------termination electrode; The 4------nickel dam; 5------tin layer
Embodiment
Embodiment 1:
Get 3000g nickel electrode high-frequency dielectric material (porcelain powder), its prescription is as shown in table 2 below:
Table 2
Porcelain powder, plasticizer, dispersant, defoamer, toluene and the ethanol of prescription more than in ball grinder, adding, mill is 5 hours under the rotating speed of 90 ± 2rpm; In jar, add adhesive, modifier again, grind under the same conditions and made the porcelain slurry in 15 hours.Described plasticizer, dispersant, defoamer, adhesive and modifier are that those skilled in the art are known.
Above-mentioned porcelain slurry is become the dielectric layer film of 10 μ m thickness with film casting machine curtain coating, silk screen with roll (Rollto Roll) mode of printing and custom-designed 0603 specification prints top electrode slurry figure on the dielectric layer film, to print staggered the gathering into folds of dielectric film of electrode again by the contraposition mode of CCD scanning patter, build up a crust piece that has 60 layers, to cling to piece and carry out lamination, cut into the capacitor green compact of a grain then.
The capacitor green compact were put into nitrogen protection binder removal case heat treated 40 hours, and this binder removal case design temperature is 450 ℃, charges into nitrogen and carries out binder removal.
The chip that binder removal is good is put into atmosphere and is kept sintering furnace, carries out sintering with segmented atmosphere sintering technology, and ceramic crystalline grain is grown up, the porcelain body densification, electrode and ceramic body co-sintered in the process form the interior electrode of chip multilayer ceramic capacitor, and electrode combines with ceramic body closely in making:
Table 3
| Parameter | The highest sintering temperature | Highest temperature temperature retention time | Tempering section oxygen content |
| Process curve | 1330℃ | 3hr | 50ppm |
Grind the corner of chip slick and sly by the chip behind the table 3 technology sintering with planet chamfering ball mill, electrode fully reveals and is beneficial to the internal and external electrode combination in making simultaneously.The chip that chamfering is good soaks the Cu terminal electrode paste of specially joining nickel electrode high frequency product with end sealing machine at its two ends.The product of sealing end is put nitrogen atmosphere protection burn in the end stove and carry out the termination sintering, it is as shown in table 4 to burn the end curve, forms the external electrode of chip multilayer ceramic capacitor, and makes internal and external electrode in conjunction with closely.
Table 4
Because external electrode copper is more active metal, very easy generation oxidation in the environment of air or humidity, not oxidized in order to make external electrode, the weldability of assurance MLCC product will be handled it, mainly be to increase some protective layers on its surface.Exactly with electric plating method outside electrode surface plate one deck nickel (4), plate one deck tin (5) again.The finished product (sample 1-10) that makes is detected (measuring down for 25 ℃) with instrument, and its performance is as shown in table 5:
Table 5
| Sample | Sintering temperature | Capacity (nF) | Loss (* 10 -4) | Insulation (Ω) | Thickness of electrode (μ m) | Dielectric thickness (μ m) | Temperature coefficient (PPM/ ℃) | Dielectric constant | Proof voltage (V) | Average life span (hour) (HALT) |
| 1 | 1340 | 0.97～ 1.02 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.1～ 7.5 | 10 | 30 | 690～ 740 | 180 |
| 2 | 1340 | 0.97～ 1.02 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.1～ 7.5 | 10 | 30 | 690～ 740 | 180 |
| 3 | 1300 | 0.98～ 1.03 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.2～ 7.6 | 10 | 30 | 710～ 760 | 180 |
| 4 | 1320 | 0.98～ 1.02 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.2～ 7.5 | 10 | 30 | 700～ 750 | 180 |
| 5 | 1330 | 0.98～ 1.02 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.2～ 7.5 | 10 | 30 | 700～ 750 | 180 |
| 6 | 1340 | 0.97～ 1.02 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.1～ 7.5 | 10 | 30 | 690～ 740 | 180 |
| 7 | 1300 | 0.91～ 0.96 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.2～ 7.6 | -20 | 28 | 700～ 750 | 180 |
| 8 | 1300 | 0.91～ 0.96 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.2～ 7.6 | -20 | 28 | 700～ 750 | 180 |
| 9 | 1300 | 0.91～ 0.96 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.2～ 7.6 | -20 | 28 | 700～ 750 | 180 |
| 10 | 1300 | 0.91～ 0.96 | 1～2 | ＞10 12 | 1.0～ 1.2 | 7.2～ 7.6 | 0 | 22 | 700～ 750 | 180 |
By table 2 data as can be seen, good with the properties of product that the method is made, in its capacity set, loss value is low and concentrated, proof voltage height (average 100V/ μ m), interior electrode and dielectric thickness are even, the long (HALT: Highly Accelerated Life Test) of average life span.
Embodiment 2:
Make of the technology identical and to obtain scattered ceramic size with embodiment 1, become the dielectric film of 10 μ m thickness with film casting machine curtain coating, build up 60 layers crust piece respectively with the method identical, after lamination and cutting, carry out sintering by table 6 temperature curve with embodiment 1.
Table 6
| Technology | The highest sintering temperature | Highest temperature temperature retention time | Tempering section |
| Technology | |||
| 1 | 1310℃ | 3hr | |
| Technology | |||
| 2 | 1320℃ | | 50ppm |
| Technology | |||
| 3 | 1330℃ | 3hr | 50ppm |
| Technology 4 | 1340℃ | 3hr | 50ppm |
After the method by identical with embodiment 1 behind the above-mentioned sintering burnt end, plate nickel dam and tin layer again, it is as shown in table 7 to record electrical property:
Table 7
| Technology | Sintering temperature | Capacity (nF) | Loss (* 10 -4) | Insulation (Ω) | Thickness of electrode (μ m) | Dielectric thickness (μ m) | Proof voltage (V) | Average life span (hour) (HALT) |
| |
1310 ℃ | 1.01～ 1.05 | 2～3 | ＞10 12 | 1.0～1.2 | 7.3～7.7 | 590～730 | 170 |
| |
1320 ℃ | 0.98～ 1.04 | 1～2 | ＞10 12 | 1.0～1.2 | 7.2～7.6 | 700～760 | 200 |
| |
1330 ℃ | 0.97～ 1.03 | 1～2 | ＞10 12 | 1.0～1.2 | 7.2～7.6 | 700～750 | 180 |
| Technology 4 | 1340 ℃ | 0.95～ 1.00 | 1～3 | ＞10 12 | 1.0～1.2 | 7.1～7.5 | 690～740 | 160 |
Embodiment 3:
Make to obtain scattered ceramic size of the technology identical with embodiment 1, become the dielectric film of 1 μ m, 3 μ m, 6 μ m and 10 μ m thickness with film casting machine curtain coating, use the method identical with embodiment 1 to build up the crust piece respectively, design specification is as shown in table 9.
Carry out binder removal with the technology identical with embodiment 1, with carrying out sintering as table 8 technology:
Table 8
| Parameter | The highest sintering temperature | The maximum temperature temperature retention time | Tempering section oxygen content |
| Data | 1320℃ | 3hr | 50ppm |
Use the method identical to carry out chamfering, end-blocking, burning end and the surface treatment of product again, the product that makes measured its performance such as table 9 with embodiment 1:
Table 9
By table 9 data as can be seen, each sample performance of making is good, in its capacity set, loss value is low and concentrated, and proof voltage height (average 100V/ μ m), interior electrode and dielectric thickness are even, the long (HALT: Highly Accelerated Life Test) of average life span.
Embodiment 4:
Produce chip behind the sintering with the method identical with embodiment 1, and the chamfering end-blocking, burn end by the condition that table 10 and the low-temperature space shown in the table 11 are different with the high-temperature region oxygen content:
Table 10
| The low-temperature space oxygen content | Burn end follower head situation |
| 150ppm | More, the short texture of the inner hole in termination, DF rising, IR descend after the surface treatment |
| 250ppm | Less, the compact structure of the inner hole in termination, electrical property is normal after the surface treatment |
| 350ppm | Few, the compact structure of the inner hole in termination, electrical property is normal after the surface treatment |
| 450ppm | Few, the compact structure of the inner hole in termination, capacity is on the low side and dispersion, and internal and external electrode connects bad |
Table 11
| The high-temperature region oxygen content | Burn end follower head situation |
| 0 | The termination color is normal, there is hole in inside, and pulling force is relatively poor |
| 5 | Few, the compact structure of normal, the inner hole of termination color, pulling force is qualified |
| 10 | The termination color is few, the compact structure of red partially, inner hole slightly, and pulling force is qualified |
| 20 | The termination is black, and oxidation is serious |
Claims (6)
1. method of making the high frequency chip multilayer ceramic capacitor may further comprise the steps:
(1) it is fully mixed dielectric material barreling a period of time under stable speed, form the porcelain slurry, the porcelain slurry that makes is carried out curtain coating, printing, lamination, lamination cut into raw cook;
(2) with the raw cook that makes at N
2Carry out binder removal under the protection of atmosphere;
(3) with the raw cook behind the binder removal at reproducibility N
2Under 1250～1400 ℃, carry out sintering in the atmosphere, then at oxidizability N
2Carry out temper in the atmosphere, obtain the chip behind the sintering;
(4) chip behind the above-mentioned sintering is carried out chamfering, end-blocking;
(5) with the chip behind the above-mentioned end-blocking at N
2Burn end under the atmosphere protection;
(6) on the termination electrode of gained chip behind the above-mentioned burning end, plate nickel dam and tin layer, make described high frequency chip multilayer ceramic capacitor.
2. the method for manufacturing high frequency chip multilayer ceramic capacitor according to claim 1 is characterized in that, the sintering temperature in the described step (3) is 1300～1350 ℃.
3. the method for manufacturing high frequency chip multilayer ceramic capacitor according to claim 1 is characterized in that, oxidizability N during temper in the described step (3)
2Oxygen content is 30～70ppm in the atmosphere.
4. the method for manufacturing high frequency chip multilayer ceramic capacitor according to claim 1 is characterized in that, in the described operation of step (5), the temperature of burning end is 700～1100 ℃.
5. the method for manufacturing high frequency chip multilayer ceramic capacitor according to claim 4 is characterized in that, in the described operation of step (5), the temperature of burning end is 800～1000 ℃.
6. the method for manufacturing high frequency chip multilayer ceramic capacitor according to claim 5 is characterized in that, in the described operation of step (5), firing termination temperature is 850～920 ℃.
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| CN101752081B (en) * | 2008-12-02 | 2011-12-07 | 华为技术有限公司 | Ceramic capacitor |
| CN101916657B (en) * | 2010-07-30 | 2012-07-18 | 广东风华高新科技股份有限公司 | High-frequency and high-Q-value chip multilayer ceramic capacitor |
| WO2020195523A1 (en) * | 2019-03-28 | 2020-10-01 | 株式会社村田製作所 | Chip-type ceramic electronic component and method for manufacturing same |
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| CN1521777A (en) | 2004-08-18 |
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