CN101335204A - 一种p型氮化镓的表面处理方法 - Google Patents
一种p型氮化镓的表面处理方法 Download PDFInfo
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- CN101335204A CN101335204A CNA2007101230922A CN200710123092A CN101335204A CN 101335204 A CN101335204 A CN 101335204A CN A2007101230922 A CNA2007101230922 A CN A2007101230922A CN 200710123092 A CN200710123092 A CN 200710123092A CN 101335204 A CN101335204 A CN 101335204A
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- gallium nitride
- type gallium
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CN2007101230922A CN101335204B (zh) | 2007-06-29 | 2007-06-29 | 一种p型氮化镓的表面处理方法 |
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CN2007101230922A CN101335204B (zh) | 2007-06-29 | 2007-06-29 | 一种p型氮化镓的表面处理方法 |
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CN101335204A true CN101335204A (zh) | 2008-12-31 |
CN101335204B CN101335204B (zh) | 2010-06-09 |
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CN2007101230922A Expired - Fee Related CN101335204B (zh) | 2007-06-29 | 2007-06-29 | 一种p型氮化镓的表面处理方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103030829A (zh) * | 2012-12-25 | 2013-04-10 | 中国人民解放军空军工程大学 | 一种低温等离子体橡胶抗老化处理方法 |
CN110890274A (zh) * | 2019-11-29 | 2020-03-17 | 江南大学 | 一种实现金属与P型GaN之间低阻欧姆接触的方法 |
CN112186031A (zh) * | 2020-09-25 | 2021-01-05 | 浙江大学杭州国际科创中心 | 一种等离子体的处理方法及其应用 |
CN112750929A (zh) * | 2021-01-26 | 2021-05-04 | 长沙壹纳光电材料有限公司 | 一种p-gan层改性的led芯片及其制作方法 |
-
2007
- 2007-06-29 CN CN2007101230922A patent/CN101335204B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103030829A (zh) * | 2012-12-25 | 2013-04-10 | 中国人民解放军空军工程大学 | 一种低温等离子体橡胶抗老化处理方法 |
CN110890274A (zh) * | 2019-11-29 | 2020-03-17 | 江南大学 | 一种实现金属与P型GaN之间低阻欧姆接触的方法 |
CN112186031A (zh) * | 2020-09-25 | 2021-01-05 | 浙江大学杭州国际科创中心 | 一种等离子体的处理方法及其应用 |
CN112750929A (zh) * | 2021-01-26 | 2021-05-04 | 长沙壹纳光电材料有限公司 | 一种p-gan层改性的led芯片及其制作方法 |
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Publication number | Publication date |
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CN101335204B (zh) | 2010-06-09 |
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C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Ding Inventor after: Wang Yanjie Inventor after: Hu Xiaodong Inventor after: Hu Chengyu Inventor after: Zhang Guoyi Inventor before: Wang Yanjie Inventor before: Hu Xiaodong Inventor before: Hu Chengyu Inventor before: Zhang Guoyi |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: WANG YANJIE HU XIAODONG HU CHENGYU ZHANG GUOYI TO: LI DING WANG YANJIE HU XIAODONG HU CHENGYU ZHANG GUOYI |
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Owner name: DONGGUAN INSTITUTE OF OPTO-ELECTRONICS PEKING UNIV Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20131119 |
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Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 523808 DONGGUAN, GUANGDONG PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20131119 Address after: 523808 Guangdong province Dongguan Songshan Lake high tech Industrial Development Zone Technology Park Building 4 Building 417, room 418 Patentee after: DONGGUAN INSTITUTE OF OPTO-ELECTRONICS PEKING University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100609 |
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CF01 | Termination of patent right due to non-payment of annual fee |