CN101298666A - Gas source supply device and method - Google Patents
Gas source supply device and method Download PDFInfo
- Publication number
- CN101298666A CN101298666A CNA2008100948314A CN200810094831A CN101298666A CN 101298666 A CN101298666 A CN 101298666A CN A2008100948314 A CNA2008100948314 A CN A2008100948314A CN 200810094831 A CN200810094831 A CN 200810094831A CN 101298666 A CN101298666 A CN 101298666A
- Authority
- CN
- China
- Prior art keywords
- source
- gas
- source material
- supply device
- evaporation part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention relates to an air supply device and a method, which is used when performing film coating by vaporization using chemical vapour deposition method. The air supply device (100) in the invention comprises: a source material storage part (20), for storing the source material (22) of raw materials as the air supply; a source material evaporation part (30), heating the source material (32) and generating the air supply; a source material supply pipe (40), for supplying the source material (22) stored in the source material storage part (20) to the source material evaporation part (30); and a a source material control part (42), arranged on the source material supply pipe (40) in order to supplying the source material (32) with scheduled amount to the source material evaporation part (30).
Description
Technical field
When the present invention relates to carry out film vapor deposition, regulate source of the gas (source gas) feedway and the method for the flow of solid material by the chemical vapor deposition method.In more detail, the present invention relates to when carrying out film vapor deposition, can control the pressure that flows into the source of the gas in the deposited chamber, gas source supply device and the method that can regulate the evaporation pressure in the deposited chamber effectively exactly by the chemical vapor deposition method.
Background technology
Film (Thin film) to a plurality of kinds in the making of semiconductor element and unicircuit carries out evaporation.The film vapor deposition method mostly is physical vapor deposition (Physical Vapor Deposition:PVD) and chemical vapor deposition method (Chemical Vapor Deposition:CVD).
Wherein, the chemical vapor deposition method is that the film of wanting evaporation is moved on the surface of wafer (wafer) with the gas shape, utilize the reaction of gas to make the method for film vapor deposition in the surface, selection by material can form various films, have the advantage that in fairly simple operation, can handle a large amount of operations, therefore be widely used.In addition; according to the chemical vapor deposition method; because form fine thin film layer easily, so have the advantage in a plurality of fields the luminescent layer of the transparency electrode that can be applied to, electroluminescence display element and protective layer etc. as the insulation layer of semiconductor element and active layer, liquid crystal display device.
Under the situation of chemical vapor deposition method, evaporation pressure directly is subjected to supplying with the influence of the flow (that is the pressure of source of the gas) of the source of the gas that the gas source supply device of the raw material of the film substrate of wanting evaporation supplies with.That is, in order in CVD, suitably to control evaporation pressure, in any case all must regulate the pressure of the source of the gas in the gas source supply device exactly.Needing high precision and regulation ground to regulate under the situation of evaporation rate, the pressure of source of the gas is regulated particularly important.
Fig. 1 is the sketch of the structure of the gas source supply device of expression prior art.The gas source supply device of prior art is made of material evaporation part, source 11, well heater 13 and the carrier gas supply unit 14 of storage source material 12.Usually, the source material exists with solid powdery at normal temperatures, therefore the source material must be heated to more than the normal temperature in order to make source raw material of substance gasification.At this moment, well heater 13 plays the effect of heating source material.In addition, thereby source of the gas is because littler than great movability, therefore, by the power of carrier gas (Carrier gas) source of the gas is successfully moved in deposited chamber.Usually, as carrier gas, can use inactive, source of the gas is become to deposited chamber mobile be easy to highly purified argon, helium, nitrogen etc.
But there are the following problems for the gas source supply device of above-mentioned prior art.The first, owing to making the steam output of source material 12, the amount of the source material 12 that remains in material evaporation part, source 11 changes, so can not regulate the pressure of source of the gas exactly.The second, make source material 12 volatilization and agglomerative processes by utilizing heating repeatedly, form concavo-convex in the evaporation surface of source material 12.At this moment, owing to be formed with concavo-convex cross section and change continuously, so the steam output of the source of the gas that produces from the surface of source material 12 simultaneously at the surface-area continually varying of source material changes.Therefore, can not regulate the pressure of source of the gas exactly.
Summary of the invention
Therefore, the present invention who finishes in order to solve above-mentioned prior art problems, it is a kind of when the chemical vapor deposition operation that its purpose is to provide, and can regulate the gas source supply device and the source of the gas supply method of evaporation pressure exactly.
In order to achieve the above object, the gas source supply device that the present invention relates to uses when carrying out film vapor deposition by the chemical vapor deposition method, it is characterized in that, comprising: material storage portion in source stores the source material as the raw material of source of the gas; Material evaporation part, source, thus heating produces source of the gas to above-mentioned source material; Source material supply-pipe supplies to material evaporation part, above-mentioned source with the stored source material of above-mentioned source material storage portion; And source material control part is arranged on the material supply-pipe of above-mentioned source for the source material with specified amount supplies to material evaporation part, above-mentioned source.
At this, material evaporation part, preferred above-mentioned source contains having heaters.
In addition, preferred above-mentioned source material control part supplies to material evaporation part, above-mentioned source with the source material of 1 batch (batch) or the many batches of needed amounts of chemical vapor deposition operation more than 2 batches.
In addition, the homodisperse unit of source material that makes inflow is contained in material evaporation part, preferred above-mentioned source.
At this, preferred above-mentioned dispersal unit is coniform body.
And preferred above-mentioned source material steam plating part is arranged on than the low position of material supply unit, above-mentioned source.
In addition, preferably also contain the carrier gas supply unit, this carrier gas supply unit is supplied with the carrier gas that above-mentioned source of the gas is transported to deposited chamber.
The source of the gas supply method that alternate manner of the present invention relates to is characterized in that, will heat the source material of 1 batch of needed amount of chemical vapor deposition operation and the source of the gas that produces supplies to deposited chamber.
The effect of invention
According to gas source supply device that the present invention relates to and method, have when the chemical vapor deposition operation can be accurately and regulation ground regulate the pressure of source of the gas and the effect of evaporation pressure.
Description of drawings
Fig. 1 is the sketch of the structure of the gas source supply device of expression prior art.
Fig. 2 is the sketch of the structure of the gas source supply device that relates to of expression one embodiment of the present invention.
Description of symbols
20 source material storage portions
Material evaporation part, 30 source
40 source material supply-pipes
50 carrier gas supply units
100 gas source supply devices
Embodiment
Below, the present invention is described in detail with reference to accompanying drawing.
Fig. 2 is the sketch of the structure of the gas source supply device 100 that relates to of expression one embodiment of the present invention.
As shown in the figure, gas source supply device 100 is basically by the source material storage portion 20 of storage source material 22 be used to make the material evaporation part, source 30 of source material 22 material gasifications to constitute, and this source material 22 is as the raw material of the film that will form by the chemical vapor deposition operation.
And, for source material storage portion 20 stored source materials 22 are supplied to material evaporation part, source 30, between source material storage portion 20 and material evaporation part, source 30, link active material supply-pipe 40.Source material supply-pipe 40 is provided with the source material control part 42 to regulating by the source amount of substance of source material supply-pipe 40.In addition, though do not illustrate, source material control part 42 can have the valve of the supply of adjusting source material.
Source material control part 42 plays that can decision be supplied with and the optionally effect of supply source material in the time will supplying to material evaporation part 30, source from the source material 22 of source material storage portion 20.At length, preferably constitute when source material control part 42 is opened, supply with 1 batch of chemical vapor deposition operation in after the suitable source material 32 of needed amount, close source material control part 42, but be not necessarily need only be defined in 1 batch amount, according to circumstances the source material of many batches of needed amounts more than 2 batches can be supplied to material evaporation part, source yet.
On the other hand, be provided with dispersal unit 34, be used to make source material 32 homodisperse that flow into material evaporation part, source 30 in the inside of material evaporation part, source 30.Preferred dispersal unit 34 be coniform body, is provided with in summit and the source material supply-pipe 40 opposed modes of its epimere, wherein, the binding of the epimere of source material supply-pipe 40 and material evaporation part, source 30.Thereby the source materials of being supplied with by source material supply-pipe 40 back 32 drop to the inside of material evaporation part, source 30.At this moment, the source material 32 of decline is such as shown in the figure, with after the summit of the epimere of dispersal unit 34 contacts, spreads all over and is distributed to whole dispersal unit 34.
Thereby according to structure of the present invention, when 1 batch chemical vapor deposition operation finished, source material 32 quilts in the material evaporation part, source 30 are material gasifications all, and for next batch chemical vapor deposition operation, will receive the source material of supplying with from source material storage portion 20 again.
In addition, preferably material evaporation part, source 30 is arranged on the position lower than source material storage portion 20 for the supply of aforesaid source material carries out smoothly, the source material of being supplied with by source material supply-pipe 40 backs is freely descended owing to gravity, but the present invention necessarily is defined in this.For example, so long as supply to material evaporation part, source from source material storage portion when can the source material have been sprayed upward, also source material storage portion can be set in the bottom of material evaporation part, source by the power of gas.
In addition, in order to make source material 32 material gasifications, the well heater 36 that utilizes nichrome wire etc. to constitute the outer side of material evaporation part, source 30 and bottom surfaces setting.
On the other hand, gas source supply device 100 can have the carrier gas supply unit 50 that stores carrier gas for smooth mobile source of the gas.Usually, as carrier gas, use sometimes inactive, source of the gas is become to deposited chamber mobile be easy to highly purified argon, helium, nitrogen etc.Certainly, under the sufficient situation of the movability of source of the gas, do not need carrier gas, therefore carrier gas supply unit 50 need not be set sometimes yet.
Like this, the gas source supply device 100 that the present invention relates to has following advantage, by supplying to deposited chamber after the source raw material of substance gasification with needed amount in 1 batch of chemical vapor deposition operation, solve the problem of the pressure transient that causes source of the gas owing to the source amount of substance that remains in material evaporation part, source and surface-area, when the chemical vapor deposition operation, can regulate evaporation pressure exactly.
Utilizability on the industry
As mentioned above, according to gas source supply device that the present invention relates to and method, can be accurately when the chemical vapor deposition operation and regulation ground regulate the pressure and the evaporation pressure of source of the gas.Therefore, we can say that industry applications of the present invention is high.
On the other hand, preferred embodiment the present invention is narrated by several in this manual, if but those skilled in the art should can not break away from disclosed category of the present invention of additional patent claim and thought as can be known and carry out multiple distortion and correction.
Claims (9)
1. a gas source supply device uses when carrying out film vapor deposition by the chemical vapor deposition method, it is characterized in that, comprising:
Source material storage portion stores the source material as the raw material of source of the gas;
Material evaporation part, source, thus heating produces source of the gas to described source material;
Source material supply-pipe supplies to material evaporation part, described source with the stored source material of described source material storage portion; And,
Source material control part is arranged on the material supply-pipe of described source for the source material with specified amount supplies to material evaporation part, described source.
2. gas source supply device as claimed in claim 1 is characterized in that:
Material evaporation part, described source contains having heaters.
3. gas source supply device as claimed in claim 1 is characterized in that:
Described source material control part supplies to material evaporation part, described source with the source material of 1 batch of needed amount of chemical vapor deposition operation.
4. gas source supply device as claimed in claim 1 is characterized in that:
Described source material control part supplies to material evaporation part, described source with the source material of the many batches of needed amounts of chemical vapor deposition operation more than 2 batches.
5. gas source supply device as claimed in claim 1 is characterized in that:
The homodisperse unit of source material that makes inflow is contained in material evaporation part, described source.
6. gas source supply device as claimed in claim 5 is characterized in that:
Described dispersal unit is coniform body.
7. gas source supply device as claimed in claim 1 is characterized in that:
Material evaporation part, described source is arranged on than the low position of material supply unit, described source.
8. gas source supply device as claimed in claim 1 is characterized in that:
Also contain the carrier gas supply unit, this carrier gas supply unit is supplied with the carrier gas that described source of the gas is transported to deposited chamber.
9. source of the gas supply method is characterized in that:
The source of the gas that will heat the source material of 1 batch of needed amount of chemical vapor deposition operation and produce supplies to deposited chamber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070043770A KR20080098277A (en) | 2007-05-04 | 2007-05-04 | Apparatus and method for supplying source gas |
| KR10-2007-0043770 | 2007-05-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101298666A true CN101298666A (en) | 2008-11-05 |
| CN101298666B CN101298666B (en) | 2012-05-30 |
Family
ID=40052750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100948314A Expired - Fee Related CN101298666B (en) | 2007-05-04 | 2008-04-28 | Gas source supply method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5166946B2 (en) |
| KR (1) | KR20080098277A (en) |
| CN (1) | CN101298666B (en) |
| TW (1) | TWI383065B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019024326A1 (en) * | 2017-07-31 | 2019-02-07 | 武汉华星光电半导体显示技术有限公司 | Evaporation apparatus |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201118195A (en) * | 2009-08-26 | 2011-06-01 | Tera Semicon Corp | Apparatus for supplying deposition gas |
| KR200460716Y1 (en) * | 2009-12-23 | 2012-05-31 | 주식회사 테라세미콘 | Apparatus For Supplying Source Gas |
| EP2649218B1 (en) * | 2010-12-08 | 2017-08-23 | Evatec AG | Apparatus and method for depositing a layer onto a substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1133390A (en) * | 1997-07-17 | 1999-02-09 | Matsushita Electric Ind Co Ltd | Powder material evaporating apparatus |
| EP1211333A3 (en) * | 2000-12-01 | 2003-07-30 | Japan Pionics Co., Ltd. | Vaporizer for CVD apparatus |
| JP2003197613A (en) * | 2001-12-27 | 2003-07-11 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
| JP2005026599A (en) * | 2003-07-01 | 2005-01-27 | Lintec Co Ltd | Unit for evaporating and feeding liquid and apparatus for evaporating and feeding liquid using the same |
-
2007
- 2007-05-04 KR KR1020070043770A patent/KR20080098277A/en active Search and Examination
-
2008
- 2008-04-07 JP JP2008099128A patent/JP5166946B2/en active Active
- 2008-04-28 CN CN2008100948314A patent/CN101298666B/en not_active Expired - Fee Related
- 2008-05-02 TW TW097116189A patent/TWI383065B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019024326A1 (en) * | 2017-07-31 | 2019-02-07 | 武汉华星光电半导体显示技术有限公司 | Evaporation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5166946B2 (en) | 2013-03-21 |
| JP2008274430A (en) | 2008-11-13 |
| CN101298666B (en) | 2012-05-30 |
| TWI383065B (en) | 2013-01-21 |
| TW200912033A (en) | 2009-03-16 |
| KR20080098277A (en) | 2008-11-07 |
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Address after: Gyeonggi Do, South Korea Patentee after: (yuan) iron and steel thermal semiconductor Address before: Gyeonggi Do, South Korea Patentee before: Terra Semiconductor Inc. |
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Effective date of registration: 20190328 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: Yuanyi IPS Corp. Address before: Gyeonggi Do, South Korea Patentee before: (yuan) iron and steel thermal semiconductor |
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