CN101297062A - 等离子体反应器 - Google Patents

等离子体反应器 Download PDF

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CN101297062A
CN101297062A CNA2006800399496A CN200680039949A CN101297062A CN 101297062 A CN101297062 A CN 101297062A CN A2006800399496 A CNA2006800399496 A CN A2006800399496A CN 200680039949 A CN200680039949 A CN 200680039949A CN 101297062 A CN101297062 A CN 101297062A
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A·J·西利
M·拉多伊乌
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Abstract

一种等离子体反应器(10)，其包括具有气体入口(18)和气体出口(20)的微波共振腔(12)，用于将微波辐射传送到共振腔的波导(14)，和用于将包含离子的等离子体物流注入到共振腔的等离子体炬(40)，所述离子用于与从气体入口(18)流到气体出口(20)的气体反应。

Description

等离子体反应器
本发明涉及等离子体反应器。所述装置可特别用于等离子体消除(abatement)系统，尽管本发明不局限于这种系统。
制造半导体设备的主要步骤是通过蒸汽前体的化学反应，在半导体基板上形成薄膜。一种已知的在基板上沉积薄膜的技术是化学汽相沉积(CVD)。在这种技术中，将工艺气体提供给安放基板的工艺室，并且反应而在基板表面上形成薄膜。提供给工艺室而形成薄膜的气体的实例包括，但不局限于：
-硅烷和氨，用于形成氮化硅薄膜；
-硅烷、氨和氧化亚氮，用于形成SiON薄膜；
-TEOS和氧气与臭氧之一，用于形成氧化硅薄膜；和
-Al(CH3)3和水蒸汽，用于形成氧化铝薄膜。
等离子体蚀刻工艺通常也在工艺室中进行以蚀刻电路特征。蚀刻气体一般是全氟化合物(perfluorocompound)气体如CF4、C2F6、CHF3、NF3和SF6。
工艺室的内表面还定期地进行清洗而从所述室中除去不需要的沉积材料。清洗所述室的一种方法是提供全氟化合物清洗气体，如NF3或C2F6，以便与不需要的沉积材料反应。
加工工具通常具有大量工艺室，每个可在沉积、蚀刻或清洗过程相应的不同阶段，使得来自室的气体排出物在任何给定时间可以具有各种不同的组成。在这些过程中，通常有包含于来自于加工室的气体排出物的剩余量的气体提供给加工室。气体，例如硅烷、和氨如果排出到大气中是非常危险的，并且全氟化物是温室气体。鉴于此，在将排出的气体排放到大气前，经常提供消除装置来处理所述排出的气体。消除装置将排出的气体中更危险的或不被期望的成分转化成那些可容易地被从排出的气体中除去的物质，例如通过常规的洗刷，和/或可被安全地排出到大气的物质。
硅烷、氨和全氟化物(PFCs)，例如NF3和C2F6，可被高效率地从气体物流中除掉，通过使用微波等离子体消除设备。微波等离子体反应器的一个实例描述于英国专利号GB2,273,027中。在所述设备中，波导将微波辐射从微波发生器传送到共振腔，共振腔装有两个处于密切相对位置的电极。待处理的气体通过气体入口流入腔，并在电极之间通过，使得微波等离子体被引发和保持于两个电极间，由于气体在这两个电极之间流动。这两个电极中的一个具有轴向孔，提供从共振腔的气体出口。在等离子体内的强条件下，气体物流内的物质与高能电子撞击，导致离解成反应性物质，其可以与氧或氢气结合而产生较稳定的副产品。例如，C2F6可被转换成CO、CO2和HF(其可在进一步的处理步骤被除去)，和SiH4可被转化成SiO2。
微波等离子体消除设备可以因此被连接到来自工具的每个加工室的排出物，以处理来自加工工具的气体物流排出物，每个设备具有其自身的微波发生器。然而，从加工室排出的气体物流一般具有较高流速，要求的引发等离子体和保持可接受的分解(destruction)和除去(removal)率(DRE)二者的微波功率往往较高，一般在3和6kW之间。因此，与微波等离子体消除设备有关的成本往往较高。
作为使用微波等离子体消除设备的备选方案，直流电等离子体炬消除设备可以用于处理来自加工工具的每个气体物流排出物。如已知的，直流电等离子体炬从惰性的、可离子化的(ionisable)气体(如在炬电极间传送的氩气)产生等离子体焰。气体物流和合适的氢气和氧气源可被传送入等离子体焰内以反应形成上述的较稳定的副产品。与微波等离子体消除设备相比，等离子体炬消除设备是较便宜的，和较便宜地操作，例如因为多个炬可由单个直流电源操作。然而，与微波等离子体消除设备相比，用于清洗气体(如氟烃和NF3)的消除性能往往较低。
这至少是本发明优选的实施方案的目标，即，提供可结合微波等离子体消除设备的较高分解效率与等离子体炬消除设备有关的低成本的等离子体反应器。
本发明提供一种等离子体反应器，其包括具有气体入口和气体出口的微波共振腔，用于将微波辐射传送到共振腔的波导，和用于将包含离子的等离子体物流注入到共振腔的等离子体炬，所述离子用于与从气体入口流到气体出口的气体反应。
微波对通过等离子体炬注入到该腔的等离子体物流的作用可显著提高由等离子体炬产生的等离子体物流的反应性，使得全氟化合物的DRE可与微波消除设备的相比。我们已发现，对于来自加工工具的室的气体物流排出物来说，提高等离子体物流的反应性到这个水平所要求的微波功率可小于1kW，并且使用相对低成本的微波发生器可产生微波。
在一种优选的实施方案中，等离子体炬包括用于从等离子体源气体产生等离子体物流的器具，和用于将所述离子的源传送到等离子体物流的器具，所述离子的源用于碰撞到等离子体物流上而形成所述离子。该离子可包含受热的OH-和/或H+离子。通过从其适当的源(如水或醇)形成用于与流过共振腔的气体的随后反应的受热的OH-和/或H+离子，已经发现导致分解(destruction)气体所要求的能量可被减少，并且所述分解的效率可得到根本改善。
相对便宜和容易可得的流体，如水蒸汽或燃料，例如氢、烃或醇，可用于产生H+和/或OH-离子，并且反应可在任何适当的压力(例如大约或低于大气压力)发生。适当的醇的例子包括甲醇、乙醇、丙醇、丙-2-醇和丁醇。其他H+离子的源的例子包括氢气、烃、氨和石蜡(paraffin)。
在一个实施方案中，等离子体炬被排列以便将离子通过气体入口注入共振腔。在这种实施方案中，等离子体炬可以包括用于接收气体的器具，和用于将气体传送到等离子体物流以便与离子注入共振腔的器具。
等离子体物流可以相对于气体单独地被注入到共振腔，因此，在另一实施方案中，共振腔包括其它入口，通过所述其它入口，等离子体物流被注入到共振腔。共振腔可具有多个用于接收相应的(例如来自相应的工艺室的)气体的入口，和/或用于接收来自相应的等离子体炬的等离子体物流的入口。
共振腔可能是多模式或单模式共振腔。如果该腔是单模式腔，那么反应器具有用于在共振腔内形成电磁驻波的器具。所述等离子体炬或每一个等离子体炬被这样优选地设置，使得等离子体物流在所述腔内的电场强度为峰值的位置被注入到腔，由此使得增强等离子体物流的反应性最大化。
如果该腔是多模式腔，其中电场强度在腔内大致均匀，等离子体炬可位于任何适当的位置。
本发明还提供一种用于处理来自加工工具的气体物流排出物的装置，所述装置包括上述的等离子体反应器。本发明还提供了等离子体消除设备，其包括具有气体入口和气体出口的微波共振腔，用于将微波辐射传送到共振腔的波导，和用于将包含离子的等离子体物流注入到共振腔的等离子体炬，所述离子用于与从气体入口流到气体出口的气体反应。
参考附图，现将描述本发明的优选特征，仅仅举例来说，其中：
图1是等离子体反应器的第一实施方案的横截面侧视图；
图2是等离子体反应器的第二实施方案的横截面侧视图；和
图3是等离子体反应器的第三实施方案的上视图。
参考图1，等离子体反应器10包括导电的共振腔12。在这种实施方案中，该共振腔是单模式共振腔，以TE01模式操作。共振腔12的一端连接到波导14，用于将微波辐射从微波发生器(未示出)传送至共振腔12。共振腔12的另一端连接到短路16。共振腔具有气体入口18和气体出口20，在这种实施方案中，其都被排列成与穿过共振腔12的微波的传播方向(如图1箭头22所示)垂直。
短路16在共振腔12的另一侧提供了波导14的延伸部。短路16包括由与波导14的端部间隔的端板26部分限定的室24，使得入射的微波辐射由端板26反射而在共振腔12内形成电磁驻波。端板26相对于波导14末端的位置可以是可调整的。
共振腔12装有两个介电板元件28、30，优选地由PTFE或其他适合的材料形成，用于保持足够的耐腐蚀性，同时对通过共振腔12传送的微波辐射是基本上透明的。每个板元件28、30优选地具有第一侧壁部分32，与穿过共振腔12的微波辐射的传播方向垂直延伸，和第二侧壁部分34，其在共振腔12内部分限定了气体室36。气体室36可以具有任何期望的横截面。
在使用中，微波辐射借助波导14由微波发生器被供给到共振腔12，从而进入气体室36。发生器产生具有相对小功率的微波辐射，优选地小于2kW，更优选地小于1kW。短路16的端板26反射微波从而在共振腔12内形成驻波，在共振腔12内具有最大值的电磁场位于气体入口18和气体出口20之间。
反应器10进一步包括直流电等离子体炬40用于把包含离子或自由基(radical)的等离子体物流注入到共振腔12，所述离子或自由基用于与在气体入口18和气体出口20之间流动的气体反应。等离子体炬40包括具有第一开口端44和第二开口端46的管状阴极，或电子发射体42。水冷却剂在电子发射体42附近传送。电子发射体42的镗(bore)48与喷嘴50排成直线，喷嘴50在围绕电子发射体42第二开口46的启动阳极或电极52中形成。启动电极52装在围绕电子发射体42的绝缘块54上，其中冷却剂入口和出口被形成以用于供给往返于电子发射体42和启动电极52的水冷却剂。
等离子体炬40具有第一气体入口56，用于接收可离子化的(ionisable)等离子体源气体(例如氩气或氮)的物流，其进入位于在电子发射体42和启动电极52之间的腔57。使用中，通过向铪插入物58供给高频、高电压信号，引导电弧(pilot arc)首先在电子发射体42和启动电极52之间形成。在电极发射极42和启动电极52之间如此形成的引导电弧电离(ionises)从第一气体入口56进入腔57的等离子体源气体以从喷嘴50的顶端产生离子化的源气体的高动量等离子体焰或物流。
等离子体炬40进一步包括第二气体入口60，用于接收离子源(例如水蒸汽)的物流。水从第二气体入口60传送到位于喷嘴50下面的等离子体区域62，使得水被等离子体物流分解以形成夹杂于等离子体物流内的H+和OH-离子。
在这种实施方案中，等离子体炬40被排列而将等离子体物流通过共振腔12的气体入口18注入共振腔12。等离子体炬40包括第三气体入口64，用于接收气体以便在反应器10中通过与夹杂于等离子体物流内的离子反应而被处理。第三气体入口64位于与电极发射极42和启动电极52基本上共轴，以便传送气体通过电极发射极42的第一开口端44进入电极发射极42的镗48。气体从电极发射极42的第二开口端46通入等离子体区域62使得气体与腔57内的等离子体源气体混合，并且与等离子体物流一起通过气体入口18从等离子体炬40射入共振腔12。由微波辐射在共振腔12内形成的驻波提高了等离子体物流内离子与待处理的气体的反应，使得气体以高分解和除去率(DRE)被分解。
反应器10可用作消除设备以处理来自加工工具的加工室的气体物流排出物，例如用于制造半导体或平板显示设备。所述加工工具可以具有多个加工室，在这种情况下多个等离子体反应器10可被提供，每个用于处理来自相应加工室的气体排出物。然而，通过提供被配置以同时处理两种或更多种气体物流的等离子体反应器10，可降低成本。现将描述这样的等离子体反应器的实例。
在图2中举例说明的第二实施方案中，等离子体反应器10被配置以处理至少两种气体物流，例如，来自相应的加工室的。两个气体物流通过相应的气体入口70a、70b被各自传送进入共振腔12。如在图2中举例说明的，这些气体入口70a、70b被排列，使得气体物流汇集在恰好位于在其它入口74下面的点72处，等离子体物流通过其它入口74被注入到共振腔12。如上述第一实施方案描述的，第三气体物流可被传送到等离子体炬40的第三气体入口64，用于与等离子体物流一起注入共振腔12。或者，离子源可被传送到第三气体入口64以形成夹杂于等离子体物流内的离子。
在图3中举例说明的第三实施方案中，等离子体反应器10包括多个等离子体炬40a、40b。每个这些等离子体炬与第一实施方案的等离子体炬40相似，使得每个等离子体炬40a、40b具有用于接收可离子化的等离子体源气体物流的第一气体入口，用于接收离子源物流的第二气体入口，和用于接收相应将被处理的气体物流的第三气体入口64。炬40a、40b被排列，使得等离子体物流以及与夹带在其中的气体和反应离子，基本上以在共振腔内产生的驻波电场的最大值，通过相应的气体入口(未示)进入共振腔12。共振腔12可以具有单一气体出口或多个气体出口，每个位于共振腔12的相应的气体入口下面。
在另一实施方案中，第三实施方案的等离子体反应器10可具有类似于第二实施方案的气体入口70a、70b的其它气体入口，每个用于传送气体进入到进入共振腔12的等离子体物流之一中。
在上述实施方案中，共振腔12以TE01模式操作。然而，腔12可被排列以便在备选的单模式或多模式方式操作。通过排列腔12在多模式方式操作，更像微波炉，使得微波电场的强度在共振腔12内是基本上均匀的，相对于共振腔12，一种或多种等离子体炬的位置具有更多的选择自由。

Claims (14)

1.一种等离子体反应器，其包括具有气体入口和气体出口的微波共振腔，用于将微波辐射传送到共振腔的波导，和用于将包含离子的等离子体物流注入到共振腔的等离子体炬，所述离子用于与从气体入口流到气体出口的气体反应。
2.根据权利要求1的反应器，其中等离子体炬包括用于从等离子体源气体产生等离子体物流的器具，和用于将所述离子的源传送到等离子体物流的器具，所述离子的源用于碰撞到等离子体物流上而形成所述离子。
3.根据权利要求1或权利要求2的反应器，其中等离子体炬被排列以便将离子通过气体入口注入共振腔。
4.根据权利要求3的反应器，其中等离子体炬包括用于接收气体的器具，和用于将气体传送到等离子体物流以便与离子一起注入共振腔的器具。
5.根据权利要求1或权利要求2的反应器，其中共振腔包括其它入口，通过所述其它入口，将等离子体物流注入共振腔。
6.根据权利要求5的反应器，其中共振腔包括多个所述的其它入口，反应器包括多个所述的等离子体炬，其各自被排列以便将等离子体物流通过相应的其它入口注入共振腔。
7.根据前述权利要求中任一项的反应器，其中共振腔包括多个所述气体入口，通过所述气体入口，相应的气体物流进入共振腔。
8.根据前述权利要求中任一项的反应器，其中共振腔是单模式共振腔，反应器包括用于在共振腔内形成电磁驻波的器具。
9.根据权利要求8的反应器，其中所述等离子体炬或每一个等离子体炬被这样设置，使得等离子体物流基本上以电磁驻波的电场的最大值从其中注入所述腔。
10.根据权利要求1-7中任一项的反应器，其中共振腔是多模式共振腔。
11.根据前述权利要求中任一项的反应器，其中微波的功率小于2kW。
12.根据前述权利要求中任一项的反应器，其中微波的功率小于1kW。
13.一种用于处理来自加工工具的气体物流排出物的装置，所述装置包括根据前述权利要求中任一项的等离子体反应器。
14.一种等离子体消除设备，其包括具有气体入口和气体出口的微波共振腔，用于将微波辐射传送到共振腔的波导，和用于将包含离子的等离子体物流注入到共振腔的等离子体炬，所述离子用于与从气体入口流到气体出口的气体反应。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101496992B (zh) * 2009-01-15 2011-09-07 大连海事大学 去除全氟碳化物气体的系统和方法
CN103657370A (zh) * 2012-09-07 2014-03-26 韩国能量技术研究院 利用微波等离子体的硫化氢及硫化羰去除装置及方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0522088D0 (en) * 2005-10-28 2005-12-07 Boc Group Plc Plasma abatement device
US8863495B2 (en) 2007-07-12 2014-10-21 Imagineering, Inc. Ignition/chemical reaction promotion/flame holding device, speed-type internal combustion engine, and furnace
WO2009008519A1 (ja) * 2007-07-12 2009-01-15 Imagineering, Inc. ガス処理装置、ガス処理システム及びガス処理方法、並びにそれを用いた排気ガス処理システム及び内燃機関
WO2009060214A1 (en) * 2007-11-06 2009-05-14 Microoncology Limited Hydroxyl radical producing plasma sterilisation apparatus
JP5374691B2 (ja) 2008-03-14 2013-12-25 イマジニアリング株式会社 複数放電のプラズマ装置
FR2952786B1 (fr) * 2009-11-17 2012-06-08 Centre Nat Rech Scient Torche a plasma et procede de stabilisation d'une torche a plasma
US9500362B2 (en) 2010-01-21 2016-11-22 Powerdyne, Inc. Generating steam from carbonaceous material
KR20150053779A (ko) 2012-09-05 2015-05-18 파워다인, 인코포레이티드 H2o, co2, o2, 및 미립자들의 소스를 사용하는 중금속 미립자를 봉쇄하는 방법
WO2014039695A1 (en) 2012-09-05 2014-03-13 Powerdyne, Inc. Methods for generating hydrogen gas using plasma sources
US9765270B2 (en) 2012-09-05 2017-09-19 Powerdyne, Inc. Fuel generation using high-voltage electric fields methods
BR112015004834A2 (pt) 2012-09-05 2017-07-04 Powerdyne Inc método para produzir combustível
US9561486B2 (en) 2012-09-05 2017-02-07 Powerdyne, Inc. System for generating fuel materials using Fischer-Tropsch catalysts and plasma sources
EP2893324A4 (en) 2012-09-05 2016-05-11 Powerdyne Inc METHOD FOR FUEL GENERATION WITH ELECTRIC HIGH VOLTAGE FIELDS
US9273570B2 (en) 2012-09-05 2016-03-01 Powerdyne, Inc. Methods for power generation from H2O, CO2, O2 and a carbon feed stock
US9427821B2 (en) 2013-03-15 2016-08-30 Agilent Technologies, Inc. Integrated magnetron plasma torch, and related methods
US10987735B2 (en) 2015-12-16 2021-04-27 6K Inc. Spheroidal titanium metallic powders with custom microstructures
EP4324577A1 (en) 2015-12-16 2024-02-21 6K Inc. Method of producing spheroidal dehydrogenated titanium alloy particles
JP2019029333A (ja) * 2017-07-26 2019-02-21 東芝メモリ株式会社 プラズマ処理装置および半導体装置の製造方法
CA3104080A1 (en) 2018-06-19 2019-12-26 6K Inc. Process for producing spheroidized powder from feedstock materials
US11611130B2 (en) 2019-04-30 2023-03-21 6K Inc. Lithium lanthanum zirconium oxide (LLZO) powder
SG11202111576QA (en) 2019-04-30 2021-11-29 6K Inc Mechanically alloyed powder feedstock
JP2023512391A (ja) 2019-11-18 2023-03-27 シックスケー インコーポレイテッド 球形粉体用の特異な供給原料及び製造方法
US11590568B2 (en) 2019-12-19 2023-02-28 6K Inc. Process for producing spheroidized powder from feedstock materials
EP4173060A1 (en) 2020-06-25 2023-05-03 6K Inc. Microcomposite alloy structure
AU2021349358A1 (en) 2020-09-24 2023-02-09 6K Inc. Systems, devices, and methods for starting plasma
US11919071B2 (en) 2020-10-30 2024-03-05 6K Inc. Systems and methods for synthesis of spheroidized metal powders

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9126179D0 (en) * 1991-12-10 1992-02-12 Atomic Energy Authority Uk The removal of organic materials from process gas streams
GB9224745D0 (en) 1992-11-26 1993-01-13 Atomic Energy Authority Uk Microwave plasma generator
ZA976292B (en) * 1996-07-29 1998-02-03 Aeci Ltd Process for decomposing a polymer to its monomer or monomers.
AU2001291290B2 (en) * 2000-09-11 2006-06-15 The Dow Chemical Company Run flat tire support
FR2815888B1 (fr) * 2000-10-27 2003-05-30 Air Liquide Dispositif de traitement de gaz par plasma
US6620394B2 (en) * 2001-06-15 2003-09-16 Han Sup Uhm Emission control for perfluorocompound gases by microwave plasma torch
US6806439B2 (en) * 2003-01-13 2004-10-19 Han Sup Uhm Elimination of airborne chemical and biological warfare agents
GB0309932D0 (en) * 2003-04-30 2003-06-04 Boc Group Plc Apparatus and method for forming a plasma
GB0403797D0 (en) * 2004-02-20 2004-03-24 Boc Group Plc Gas abatement

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101496992B (zh) * 2009-01-15 2011-09-07 大连海事大学 去除全氟碳化物气体的系统和方法
CN103657370A (zh) * 2012-09-07 2014-03-26 韩国能量技术研究院 利用微波等离子体的硫化氢及硫化羰去除装置及方法
CN103657370B (zh) * 2012-09-07 2015-09-30 韩国能量技术研究院 利用微波等离子体的硫化氢及硫化羰去除装置及方法

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ATE487807T1 (de) 2010-11-15
DE602006018173D1 (de) 2010-12-23
EP1937870B1 (en) 2010-11-10
GB0521830D0 (en) 2005-12-07
US8168128B2 (en) 2012-05-01
US20090165953A1 (en) 2009-07-02
EP1937870A1 (en) 2008-07-02
JP2009513329A (ja) 2009-04-02
TW200731880A (en) 2007-08-16
TWI442836B (zh) 2014-06-21
KR20080060255A (ko) 2008-07-01
JP5379482B2 (ja) 2013-12-25
WO2007048994A1 (en) 2007-05-03

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