CN101285948B - LCM half-finished product electrostatic resistance limit voltage resistant test method - Google Patents
LCM half-finished product electrostatic resistance limit voltage resistant test method Download PDFInfo
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- CN101285948B CN101285948B CN2008101100393A CN200810110039A CN101285948B CN 101285948 B CN101285948 B CN 101285948B CN 2008101100393 A CN2008101100393 A CN 2008101100393A CN 200810110039 A CN200810110039 A CN 200810110039A CN 101285948 B CN101285948 B CN 101285948B
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Abstract
The invention relates to a method for testing ultimate antistatic capacity of LCM (liquid crystal module) semi-finished products, comprising the following steps of preparing a sample to be tested, setting a static simulative discharge generator, preparing for earthing of the sample to be tested, starting a static gun discharge switch to test instrument connections one by one, and lighting confirmation, namely, after an earth wire is taken, the sample is tested on a lamp stage for lighting confirmation that whether damage by static electricity exists. If poor static does not happen, discharge voltage is increased to verify, the step of starting a static gun discharge switch to test instrument connections one by one is repeated until ESD (damage by static electricity) happens; if the poor static happens, the discharge voltage is decreased to verify. The method can test the antistatic capacity of new products or the LCM semi-finished products which are put into production, and also can contrast the level of antistatic capacities of different materials of different manufacturers.
Description
[technical field]
The present invention relates to method of testing, particularly at the method for testing of the half-finished limit antistatic effect of LCM (liquid crystal display module) to the limit antistatic effect of electrostatic sensitive product.
[background technology]
In LCM module production run, when the examination of new product amount imports, need to become semi-manufacture to do antistatic limit voltage-withstand test, whether meet the requirements when the follow-up a large amount of operation with the checking new product to combinations of materials such as IC (semiconductor element product), PWB (printed circuit board (PCB)), panels.In addition, as the antistatic effect between the needs contrasts different vendor starting material whether during the property of there are differences, also need to become semi-manufacture to do antistatic limit voltage-withstand test, to provide to the electrostatic defending class requirement in the manufacturing process to combinations of materials such as IC, PWB, panels.
At present, the raw material supplier only provides the test data of the antistatic voltage endurance capability of homogenous material, for example, and IC, ASIC (special IC).But the method for testing and the test data that lack the limit antistatic effect of (that is: IC+PWB+ panel) after in the LCM production run, being combined into semi-manufacture.
[summary of the invention]
Technical matters to be solved by this invention is to provide a kind of method of testing to the half-finished limit antistatic effect of LCM, fills up the blank of the anti-static voltage aptitude tests of the half-finished limit of the module method of present LCM production industry, and effective solution is provided.
The present invention is by the following technical solutions:
LCM finished product electrostatic limit withstand voltage test method may further comprise the steps:
Step 1: testing sample is prepared
Choose LCM semi-manufacture to be tested, confirm on the board of lighting a lamp that in advance detected part does not have the static badness;
Step 2: static simulation electrical discharge generator is set
On static simulation electrical discharge generator, the static discharge pattern is set; Choose benchmark starting point sparking voltage; Choose polarity of voltage;
Step 3: testing sample ground connection is prepared
The LCM semi-manufacture are placed on the insulation plane, and charged sub-components and parts face needs up; With the PWB ground hole ground connection in the LCM semi-manufacture; ESD gun is ground connection simultaneously;
Step 4: static discharge experimentation
Starting static gun discharge switch is tested one by one to instrument connection;
Step 5: the affirmation of lighting a lamp
After ground wire taken off, specimen is lit a lamp on the board of lighting a lamp confirmed whether have static to wound phenomenon.If it is bad static not occur, then need improve sparking voltage and verify, repeat the 4th step, till having ESD (static wounds) bad phenomenon; If it is bad static to occur, then need reduces sparking voltage and verify.
As one of concrete scheme of the present invention, detected part is the PWB in the LCM semi-manufacture in the described step 1; The static discharge mode initialization is the contact discharge pattern in the described step 2; Instrument connection is each pin of ASIC (special IC) of PWB in the described step 4.
As two of concrete scheme of the present invention, detected part is the IC in the LCM semi-manufacture in the described step 1; The static discharge mode initialization is a pattern air discharge in the described step 2; Instrument connection is the IC instrument connection in the described step 4.
The invention has the advantages that: the LCM module finished product electrostatic ability that the present invention can provide the checking new product or go into operation; Also can contrast the antistatic effect level of different vendor's material.
[description of drawings]
In conjunction with the embodiments the present invention is done a detailed description with reference to the accompanying drawings.
Fig. 1 is each step synoptic diagram of first embodiment of the invention.
Fig. 2 is each step synoptic diagram of second embodiment of the invention.
[embodiment]
Embodiment one:
The antistatic effect method of testing of the ASIC element of the PWB in the LCM semi-manufacture:
Step 11: testing sample is prepared
Choosing the half-finished laboratory sample quantity for the treatment of of LCM to be scrapped is the 3-5 sheet, and confirms on the lamp stage machine that in advance PWB does not have the static badness.
Step 12: static simulation electrical discharge generator is set
Adopt static simulation electrical discharge generator, and set the static discharge pattern, need select conical static pin, do contact discharge metallic conductor positions such as ASIC (special IC) pin or instrument connections; Withstand voltage specification with reference to ASIC is 4-5KV, and getting 3KV is benchmark starting point sparking voltage; Electrostatic potential is chosen the positive polarity voltage discharge earlier.
Step 13: testing sample ground connection is prepared
The LCM semi-manufacture are placed on the insulation plane, and charged sub-components and parts face needs up; With PWB ground hole ground connection; The ESD gun while is ground connection also.
Step 14: static discharge experimentation
The contact of static pin on each ASIC pin, is started the static gun discharge switch then and begins one by one to each pin discharge of ASIC.Discharge frequency is 1 time/second.If need the input end pin of proof ASIC and the difference of the antistatic ability of wounding of output terminal pin, need then that respectively follow-up continuous step 15 is finished in input end or output terminal test and get final product.
Step 15: the affirmation of lighting a lamp
After ground wire taken off, specimen is lit a lamp on the board of lighting a lamp confirmed whether have ASIC static to wound phenomenon.
If it is bad static not occur, then still need adopts positive voltage progressively to improve sparking voltage and verify that repeating step 14 is till having the ESD bad phenomenon.If ESD promptly to occur bad for 3KV, then need change module to be measured (the containing ASIC) sample that more renews and reduce sparking voltage and verify.Rising or drop-out voltage threshold values are at interval generally selected 0.5-1KV.
After as long as the anti-electrostatic experiment of reverse voltage switches to the negative polarity switch, repeat above-mentioned steps 14-step 15 and get final product.
Sparking voltage principle from low to high the anti-static voltage ability of the limit that the static discharge minimum voltage value of ESD when bad is PWB in these LCM semi-manufacture occurs up to first.
Test the anti-static voltage ability of the PWB limit of all the other each sheets with quadrat method.When if the failure of an experiment takes place, the testing sample repeating step 11-step 15 that needs more to renew immediately continues experiment.
Embodiment two:
The antistatic effect method of testing of IC in the LCM semi-manufacture:
Step 21: testing sample is prepared
Choosing the half-finished laboratory sample quantity for the treatment of of LCM to be scrapped is 3, and confirms on the lamp stage machine that in advance IC does not have the static badness.
Step 22: static simulation electrical discharge generator is set
Adopt static simulation electrical discharge generator, and set the static discharge pattern, need select the static pin of semicircle sphere, make atmospherical discharges the static discharge at non-metal conductor positions such as IC; Withstand voltage specification with reference to IC is 2-3KV, and getting 1KV is benchmark starting point sparking voltage; Electrostatic potential is chosen the positive polarity voltage discharge earlier.
Step 23: testing sample ground connection is prepared
The LCM semi-manufacture are placed on the insulation plane; With PWB ground hole ground connection; The ESD gun while is ground connection also.
Step 24: static discharge experimentation
Start the static gun discharge switch earlier, and slowly the static pin is shifted near the IC surface from distance 10CM, till touching the instrument connection of IC with brilliant first side.Whole process needs timing 25 seconds, promptly discharges to stop after 25 times.Discharge frequency is 1 time/second.
Step 25: the affirmation of lighting a lamp
After ground wire taken off, specimen is lit a lamp on the board of lighting a lamp confirmed whether have static to wound phenomenon.
If it is bad static not occur, then still need adopts positive voltage progressively to improve sparking voltage and verify that repeating step 24 is till having the ESD bad phenomenon.If ESD promptly to occur bad for 1KV, the IC sample to be measured of the position that need more renew and reduce sparking voltage and verify then.Rising or drop-out voltage threshold values are at interval generally selected 0.1-1KV.
After as long as the anti-electrostatic experiment of reverse voltage switches to the negative polarity switch, repeat above-mentioned steps 24-step 25 and get final product.
Sparking voltage principle from low to high the anti-static voltage ability of the limit that the static discharge minimum voltage value of ESD when bad is IC in these LCM semi-manufacture occurs up to first.
Test the anti-static voltage ability of the IC limit of all the other each sheet combined articles with quadrat method.When if the failure of an experiment takes place, the testing sample repeating step 21-step 25 that needs more to renew immediately continues experiment.
More than among two embodiment laboratory environment require be: temperature 19-25 degree centigrade, relative humidity is 40-75%.
The LCM module finished product electrostatic ability that the present invention can provide the checking new product or go into operation; Also can contrast the antistatic effect level of different vendor's material.
Claims (5)
1.LCM finished product electrostatic limit withstand voltage test method is characterized in that: may further comprise the steps:
Step 1: testing sample is prepared
Choose LCM semi-manufacture to be tested, confirm on the board of lighting a lamp that in advance detected part does not have the static badness;
Step 2: static simulation electrical discharge generator is set
On static simulation electrical discharge generator, the static discharge pattern is set; Choose benchmark starting point sparking voltage; Choose polarity of voltage;
Step 3: testing sample ground connection is prepared
The LCM semi-manufacture are placed on the insulation plane, and charged sub-components and parts face needs up; With the PWB ground hole ground connection in the LCM semi-manufacture; Static gun is ground connection simultaneously;
Step 4: static discharge experimentation
Starting static gun discharge switch is tested one by one to instrument connection;
Step 5: the affirmation of lighting a lamp
After ground wire taken off, specimen is lit a lamp on the board of lighting a lamp confirmed whether have static to wound phenomenon.If it is bad static not occur, then need improve sparking voltage and verify, repeat the 4th step, till having the ESD bad phenomenon; If it is bad static to occur, then need reduces sparking voltage and verify.
2. LCM finished product electrostatic limit withstand voltage test method as claimed in claim 1, it is characterized in that: detected part is the PWB in the LCM semi-manufacture in the described step 1; The static discharge mode initialization is the contact discharge pattern in the described step 2; Instrument connection is each pin of ASIC of PWB in the described step 4.
3. LCM finished product electrostatic limit withstand voltage test method as claimed in claim 2 is characterized in that:
Described step 1: testing sample is prepared
Choosing the half-finished laboratory sample quantity for the treatment of of LCM to be scrapped is the 3-5 sheet, and confirms on the lamp stage machine that in advance PWB does not have the static badness;
Described step 2: static simulation electrical discharge generator is set
Adopt static simulation electrical discharge generator, and set the static discharge pattern, ASIC pin or the instrument connection of PWB are selected conical static pin, do contact discharge; Getting 3KV is benchmark starting point sparking voltage; Choose polarity of voltage;
Described step 4: static discharge experimentation
The contact of static pin on each ASIC pin of PWB, is started the static gun discharge switch then and begins one by one each pin of ASIC to be discharged, and discharge frequency is 1 time/second.
4. LCM finished product electrostatic limit withstand voltage test method as claimed in claim 1, it is characterized in that: detected part is the IC in the LCM semi-manufacture in the described step 1; The static discharge mode initialization is a pattern air discharge in the described step 2; Instrument connection is the instrument connection of IC with brilliant first side in the described step 4.
5. LCM finished product electrostatic limit withstand voltage test method as claimed in claim 4 is characterized in that:
Described step 1: testing sample is prepared
Choosing the half-finished laboratory sample quantity for the treatment of of LCM to be scrapped is the 3-5 sheet, and confirms on the lamp stage machine that in advance IC does not have the static badness;
Described step 2: static simulation electrical discharge generator is set
Adopt static simulation electrical discharge generator, and set the static discharge pattern,, make atmospherical discharges the static pin of IC with the static discharge selection semicircle sphere of the instrument connection of brilliant first side; Getting 1KV is benchmark starting point sparking voltage; Choose polarity of voltage;
Described step 4: static discharge experimentation
Start the static gun discharge switch earlier, and slowly the static pin is shifted near the IC surface from distance 10CM, till touching the instrument connection of IC with brilliant first side, discharge frequency is 1 time/second.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2010143932A1 (en) * | 2009-06-10 | 2010-12-16 | Kek Hing Kow | Test apparatus with electrostatic discharge capability |
| CN105158945A (en) * | 2015-10-20 | 2015-12-16 | 京东方科技集团股份有限公司 | Substrate static electricity testing device |
| CN106680635B (en) * | 2017-01-03 | 2019-08-16 | 京东方科技集团股份有限公司 | Testing touch screen system and testing touch screen method |
| CN107238769A (en) * | 2017-05-31 | 2017-10-10 | 晶晨半导体(上海)股份有限公司 | A kind of method of the Electro-static Driven Comb ability of analysis chip cabling |
| CN108205091B (en) * | 2017-12-29 | 2021-02-05 | 深圳Tcl新技术有限公司 | Static testing device and system |
| CN111899679B (en) * | 2020-07-03 | 2022-05-20 | 厦门强力巨彩光电科技有限公司 | ESD test method of LED display module chip |
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| CN1055241A (en) * | 1990-03-23 | 1991-10-09 | 中国人民解放军军械工程学院 | Electrastatic dynamic potential measuring device |
| CN1073769A (en) * | 1991-12-21 | 1993-06-30 | 上海宝山钢铁总厂 | Indoor large-area space static electricity testing method |
| CN101122621A (en) * | 2006-08-10 | 2008-02-13 | 华硕电脑股份有限公司 | Electrostatic discharge detection device and method |
| CN101149414A (en) * | 2006-09-22 | 2008-03-26 | 英华达（上海）科技有限公司 | Electrostatic discharge test device and method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1055241A (en) * | 1990-03-23 | 1991-10-09 | 中国人民解放军军械工程学院 | Electrastatic dynamic potential measuring device |
| CN1073769A (en) * | 1991-12-21 | 1993-06-30 | 上海宝山钢铁总厂 | Indoor large-area space static electricity testing method |
| CN101122621A (en) * | 2006-08-10 | 2008-02-13 | 华硕电脑股份有限公司 | Electrostatic discharge detection device and method |
| CN101149414A (en) * | 2006-09-22 | 2008-03-26 | 英华达（上海）科技有限公司 | Electrostatic discharge test device and method |
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Effective date of registration: 20180830 Address after: 350000 1, third, fourth floor, No. 6, Ru Jiang Xi Road, Mawei District, Fuzhou, Fujian Patentee after: CPT DISPLAY TECHNOLOGY (SHENZHEN)CO., LTD. Address before: 350015 77, science and Technology Park, Mawei District, Fuzhou, Fujian Patentee before: Fujian Huaying Display Technology Co., Ltd. |