CN102375100B - Testing apparatus and correlated test method thereof - Google Patents
Testing apparatus and correlated test method thereof Download PDFInfo
- Publication number
- CN102375100B CN102375100B CN201010256936.2A CN201010256936A CN102375100B CN 102375100 B CN102375100 B CN 102375100B CN 201010256936 A CN201010256936 A CN 201010256936A CN 102375100 B CN102375100 B CN 102375100B
- Authority
- CN
- China
- Prior art keywords
- measured
- electric field
- testing
- power supply
- test signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention relates to a test method that is used for testing a to-be-tested apparatus. The test method comprises the following steps that: a to-be-tested apparatus is placed in an electric field; a supply power source is provided for starting the to-be-tested apparatus; a test signal is input in at least one metal test point of the to-be-tested apparatus that has been started and placed in the electric field, so that a test on the to-be-tested apparatus is carried out. In addition, the invention also provides a testing apparatus.
Description
Technical field
The present invention relates to a kind of proving installation and its relevant test method of electronic product, relate in particular to a kind of excessively electrically device and its correlation technique of stress of testing electronic product.
Background technology
Under the ecology of current electronic industry, electronic product is not to be produced in same factory by a company completely conventionally.In other words, when this electronic product may be accomplished to greenware condition by a factory, and then by another factory, these semi-manufacture (a for example integrated circuit) are completed as this electronic product.But, most factory is carrying out static discharge (Electrostatic discharge to semi-manufacture, ESD) when test is with excessively electrical stress (Electrical Overstress, EOS) test, all cannot simulate these semi-manufacture and face real excessively electrically stress phenomena in factory between next.In addition, in the time there is this excessively electrical stress damage in these semi-manufacture in a factory, the metal wire presenting in this half-finished integrated circuit (IC) chip burns metal wire that phenomenon can present when there is this static discharge damage and burn phenomenon and come seriously, and this damage that excessively electrically stress causes is not quite alike with the damage that power end short circuit causes again.Therefore,, in the time that this excessively electrical stress damage occurs these semi-manufacture, the general upper mode being difficult to is by experiment tested these semi-manufacture and is copied living damage.Thus, when these semi-manufacture this occur excessively electrically when stress damage, between factory's end and factory end, be just difficult to differentiate who should be to the damage responsibility of this excessively electrical stress on earth.Therefore, how accurately electronic product being carried out to excessively electrical stress test has become field for this reason to need the problem of solution badly with the excessively electrically stress that quantizes this electronic product and can bear.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of excessively electrically device and its correlation technique of stress of testing electronic product, the problem being faced to solve prior art.
According to the first embodiment of the present invention, it provides a kind of method of testing, is used for testing device to be measured.This method of testing includes the following step: this device to be measured is positioned in electric field; Provide supply power supply to start this device to be measured; And to starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field, this device to be measured is tested.
According to the second embodiment of the present invention, it provides a kind of proving installation, is used for testing device to be measured, and this proving installation includes electric field generation device, power supply unit and signal generation device.This electric field generation device for producing electric field between the first sheet metal and the second sheet metal, and wherein this device to be measured is positioned between this first sheet metal and this second sheet metal.This power supply unit is coupled to this device to be measured, is used to provide supply power supply and starts this device to be measured.This signal generation device is coupled to this device to be measured, is used for, to starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field, this device to be measured being tested.
Accompanying drawing explanation
Fig. 1 is the embodiment schematic diagram of a kind of proving installation of the present invention.
Fig. 2 is the embodiment process flow diagram of method of testing of the present invention.
[main element symbol description]
100 proving installations
102 devices to be measured
104 electric field generation devices
106 power supply units
108 signal generation devices
1022 metal measuring points
1024 integrated circuit (IC) chip
1026 circuit boards
1042 first sheet metals
1044 second sheet metals
1082 pulse generators
1084 capacitors
1086 switches
Embodiment
In instructions and claims, use some vocabulary to censure specific element.In affiliated field, those of ordinary skill should be understood, and hardware manufacturer may be called same element with different nouns.This instructions and follow-up claims are not used as distinguishing the mode of element with the difference of title, but the difference in function is used as the criterion of distinguishing with element.In the whole text, in instructions and claims, be open term mentioned " comprising ", therefore should be construed to " comprise but be not limited to ".In addition, " coupling " word comprises directly any and is indirectly electrically connected means at this, therefore, be coupled to the second device if describe first device in literary composition, represent that this first device can directly be electrically connected in this second device, or be indirectly electrically connected to this second device by other device or connection means.
With reference to figure 1.Figure 1 shows that the embodiment schematic diagram according to a kind of proving installation 100 of the present invention, proving installation 100 is used for testing device 102 to be measured.Proving installation 100 includes electric field generation device 104, power supply unit 106 and signal generation device 108.Electric field generation device 104 for producing electric field E (direction of dotted arrow) between the first sheet metal 1042 and the second sheet metal 1044, and wherein device 102 to be measured is positioned between the first sheet metal 1042 and the second sheet metal 1044.Power supply unit 106 is coupled to device 102 to be measured, is used to provide supply power supply Vdd and starts device 102 to be measured.Signal generation device 108 is coupled to device 102 to be measured, is used for, to starting and be positioned at least one metal measuring point 1022 input test signal St of the device to be measured 102 in electric field E, device 102 to be measured being tested.In order to further describe spiritual place of the present invention, the device to be measured 102 of the present embodiment includes integrated circuit (IC) chip 1024, integrated circuit (IC) chip 1024 has branched pin (Pin) and is coupled on circuit board 1026, and above-mentioned metal measuring point 1022 is a pin in this branched pin.
Please note, the important technology of the present embodiment is characterised in that and device 102 to be measured is positioned in electric field E and is that pin input test signal St is to carry out excessively electrically stress test, the therefore not implementation mode of restricting signal generation device 108 of the present invention to device 102 to be measured.In other words, any device that can produce test signal St is scope of the present invention place.In the present embodiment, signal generation device 108 is only illustrated with the schematic diagram of simplifying, and signal generation device 108 includes pulse (Pulse) generator 1082, capacitor 1084 and switch 1086.The input end N1 of switch 1086 is coupled to the output terminal of pulse generator 1082, pulse generator 1082 is brought in and is produced pulse signal Sp by this output, the control end N2 of switch 1086 is coupled to capacitor 1084, and the output terminal N3 of switch 1086 is used for exporting the metal measuring point 1022 of test signal St at device 102 to be measured.In the time that pulse generator 1082 will produce test signal St, switch 1086 can be controlled to this output terminal (that is N2) and capacitor 1084 of conducting pulse generator 1082, and pulse generator 1082 also produces pulse signal Sp so that capacitor 1084 is charged.In the time that the cross-pressure of capacitor 1084 arrives predetermined voltage, switch 1086 can be controlled to the metal measuring point 1022 (that is N3) of electric conduction container 1084 (that is N2) and device 102 to be measured, being accumulated in charge discharge on capacitor 1084 to device 102 to be measured (that is test signal St).Thus, just can be controlled with the ON time of adjusting switch 1086 by the voltage level of adjusting pulse signal Sp respectively the voltage level of test signal St and discharge time.In other words,, by adjusting the voltage level and the ON time of adjusting switch 1086 of pulse signal Sp, signal generation device 108 can produce the test signal St similar in appearance to electrostatic signal.Certainly, signal generation device 108 is not limited to use pulse generator 1082, and any device that can produce high-voltage level all belongs to scope of the present invention place.
In order correctly device 102 to be measured to be carried out to the excessively electrically stress that excessively electrically stress test can bear to quantize device 102 to be measured, the operation of above-mentioned proving installation 100 should meet predetermined operating process, as shown in Figure 2.Figure 2 shows that the embodiment process flow diagram according to method of testing 200 of the present invention, method of testing 200 is used for testing the excessively electrically stress that above-mentioned device to be measured 102 can bear.If note that and can reach substantially identical result, do not need necessarily to carry out according to the step order in the flow process shown in Fig. 2, and the step shown in Fig. 2 not necessarily will carry out continuously, that is other step also can be inserted wherein.Method of testing 200 includes the following step:
Step 202: produce electric field E;
Step 204: device 102 to be measured is positioned in electric field E;
Step 206: provide supply power supply Vdd to start device 102 to be measured; And
Step 208: to starting and be positioned over the metal measuring point 1022 input test signal St of the device to be measured 102 in electric field E, device 102 to be measured is tested.
First, in step 202, hold in order to simulate truly semi-manufacture the buildup of static electricity phenomenon being faced in factory, the present invention first utilizes electric field generation device 104 to produce electric field E between the first sheet metal 1042 and the second sheet metal 1044.Then again device 102 to be measured is positioned between the first sheet metal 1042 and the second sheet metal 1044, for example, to make element (plain conductor in integrated circuit (IC) chip 1024) in device 102 to be measured be accumulated to (step 204) after electric charge to a certain degree, restart power supply unit 106 to provide supply power supply Vdd to device 102 to be measured (step 206).Thus, proving installation 100 of the present invention just can simulate semi-manufacture to be had under static charge buildup at factory's end, and power supply is to this half-finished situation suddenly.
Then, when after execution of step 206, if when the phenomenon that the plain conductor in device 102 to be measured does not burn, then carry out step 208, that is to starting and be positioned over the metal measuring point 1022 input test signal St of the device to be measured 102 in electric field E, device 102 to be measured is tested.As the described signal generation device 108 of above-mentioned paragraph, the voltage level of test signal St and discharge time can be controlled with the ON time of adjusting switch 1086 by the voltage level of adjusting pulse signal Sp respectively, to produce the test signal of varying strength, and judge whether the plain conductor in device 102 to be measured has the phenomenon of burning.Furthermore, in the time that the plain conductor in device 102 to be measured has the phenomenon of burning, judge that device 102 to be measured cannot be by this excessively electrical stress test under this current electric field E and this current test signal St, vice versa.Thus, after the test repeatedly of device 102 to be measured being done by above-mentioned proving installation 100 and method of testing 200, this excessively electrical stress that device 102 to be measured can bear just can be quantized.Certainly, by above-mentioned proving installation 100 and method of testing 200, it can also be tested other pin in the integrated circuit (IC) chip of device 102 to be measured 1024 (or any metal measuring point of device to be measured 102), this excessively electrical stress can bear further to quantize device 102 to be measured.
Although note that above-described embodiment is positioned over device 102 to be measured in electric field E and carries out this excessively electrically stress test, it not represents to such an extent that the whole device 102 to be measured of restriction is all in electric field E.In fact, by the device to be measured 102 of part be positioned in electric field E, carry out this excessively electrically stress test can also reach haply result of the presently claimed invention, within therefore it also belongs to the scope that the scope of the claims of the present invention protects.
In sum, the present invention is accumulated to device 102 to be measured after electric charge to a certain degree, restart device 102 to be measured and the metal measuring point input test signal St of device 102 to be measured is carried out to this excessively electrically stress test, this excessively electrical stress can bear to quantize device 102 to be measured.
The foregoing is only the preferred embodiments of the present invention, all equivalent variations of making according to the claims in the present invention and modification, all should belong to the scope that the present invention is contained.
Claims (6)
1. an excessively electrically method for stress of testing electronic product, is used for testing device to be measured, includes:
This device to be measured is positioned in electric field, to make accumulation electric charge to a certain degree in this device to be measured;
Provide supply power supply to start this device to be measured; And
To starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field, this device to be measured is tested, and the step wherein this device to be measured being positioned in this electric field was carried out before the step that provides this supply power supply to start this device to be measured.
2. method of testing according to claim 1, wherein this test signal is pulse signal.
3. method of testing according to claim 1, the pin that wherein this metal measuring point is this device to be measured.
4. an excessively electrically device for stress of testing electronic product, is used for testing device to be measured, includes:
Electric field generation device, for produce electric field between the first sheet metal and the second sheet metal, wherein this device to be measured is positioned between this first sheet metal and this second sheet metal, to make accumulation electric charge to a certain degree in this device to be measured;
Power supply unit, is coupled to this device to be measured, is used to provide supply power supply and starts this device to be measured; And
Signal generation device, be coupled to this device to be measured, be used for to starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field, this device to be measured is tested, wherein, after this device to be measured is placed in this electric field, just starting this power supply unit provides this supply power supply to this device to be measured.
5. proving installation according to claim 4, wherein this test signal is pulse signal.
6. proving installation according to claim 4, the pin that wherein this metal measuring point is this device to be measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010256936.2A CN102375100B (en) | 2010-08-17 | 2010-08-17 | Testing apparatus and correlated test method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010256936.2A CN102375100B (en) | 2010-08-17 | 2010-08-17 | Testing apparatus and correlated test method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102375100A CN102375100A (en) | 2012-03-14 |
| CN102375100B true CN102375100B (en) | 2014-06-11 |
Family
ID=45793991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010256936.2A Expired - Fee Related CN102375100B (en) | 2010-08-17 | 2010-08-17 | Testing apparatus and correlated test method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102375100B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107340447B (en) * | 2016-05-03 | 2020-07-10 | 技嘉科技股份有限公司 | Test apparatus and test method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6788047B1 (en) * | 2003-04-03 | 2004-09-07 | United Microelectronics Corp. | DUT board for eliminating electrostatic discharge damage |
| CN1576868A (en) * | 2003-07-08 | 2005-02-09 | 松下电器产业株式会社 | Semiconductor integrated circuit, and electrostatic withstand voltage test method and apparatus therefor |
| CN1588102A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | Breakdown test method for medium relative to time in high temperature constant electric field |
-
2010
- 2010-08-17 CN CN201010256936.2A patent/CN102375100B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6788047B1 (en) * | 2003-04-03 | 2004-09-07 | United Microelectronics Corp. | DUT board for eliminating electrostatic discharge damage |
| CN1576868A (en) * | 2003-07-08 | 2005-02-09 | 松下电器产业株式会社 | Semiconductor integrated circuit, and electrostatic withstand voltage test method and apparatus therefor |
| CN1588102A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | Breakdown test method for medium relative to time in high temperature constant electric field |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102375100A (en) | 2012-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101925828B (en) | Method and apparatus for testing AFCI device for series arc detection | |
| CN110006637A (en) | Three support insulator Mechanical Reliability test platform of GIL equipment and test method | |
| CN102375100B (en) | Testing apparatus and correlated test method thereof | |
| CN108663593A (en) | System for testing electronic device | |
| US6988061B2 (en) | Operational verification for product safety testers | |
| Imburgia et al. | Partial discharges behavior under different rectified waveforms | |
| CN103018702A (en) | Fast checking method of high-voltage cabinet current transformer secondary loop line | |
| McEachern et al. | A new, ultra low cost power quality and energy measurement technology-the future of power quality monitoring | |
| CN103885861A (en) | Testing device for start-up test of electronic device | |
| CN200982990Y (en) | USB testing device | |
| Shinde et al. | ESD to the display inducing currents measured using a substitution PC board | |
| CN210573652U (en) | Server power-off device | |
| CN203037757U (en) | Detection apparatus for response waveform of dynamic var generation device | |
| CN102981078B (en) | Response waveform detecting device and method for dynamic reactive-power generating device | |
| Jamtsho et al. | Partial Discharge Investigation of Defective Cable Terminations using Different Voltage Sources | |
| CN109298986B (en) | Undershot test method and device for server board card | |
| Kimura et al. | A study on response characteristics modeling method for ESD protection device by vector network analyzer | |
| TWI510791B (en) | Testing device and related testing method | |
| Tatizawa et al. | Analysis and location of partial discharges in power transformers by means of electrical methods | |
| US20230213567A1 (en) | Electrostatic Withstand Voltage Test Device and Electrostatic Withstand Voltage Test Method | |
| Jirutková et al. | System Level ESD Testing with Capacitively Coupled Stress Pulses | |
| CN109212275A (en) | A kind of motor control center drawer switch test switching device and test method | |
| CN116256610B (en) | Method for realizing automatic triggering of test signal of semiconductor tester | |
| CN114442721B (en) | Voltage stabilizer screening method, testing device and screening system | |
| WO2008072401A1 (en) | Test device and inspection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140611 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |