CN102375100A - Testing apparatus and correlated test method thereof - Google Patents
Testing apparatus and correlated test method thereof Download PDFInfo
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- CN102375100A CN102375100A CN2010102569362A CN201010256936A CN102375100A CN 102375100 A CN102375100 A CN 102375100A CN 2010102569362 A CN2010102569362 A CN 2010102569362A CN 201010256936 A CN201010256936 A CN 201010256936A CN 102375100 A CN102375100 A CN 102375100A
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Abstract
The invention relates to a test method that is used for testing a to-be-tested apparatus. The test method comprises the following steps that: a to-be-tested apparatus is placed in an electric field; a supply power source is provided for starting the to-be-tested apparatus; a test signal is input in at least one metal test point of the to-be-tested apparatus that has been started and placed in the electric field, so that a test on the to-be-tested apparatus is carried out. In addition, the invention also provides a testing apparatus.
Description
Technical field
The present invention relates to a kind of proving installation and its dependence test method of electronic product, relate in particular to a kind of excessively electrically device and its correlation technique of stress of testing electronic product.
Background technology
Under the ecology of current electronic industry, electronic product is not to be produced in same factory by a company fully usually.In other words, when this electronic product possibly be accomplished to greenware condition by a factory, be this electronic product and then these semi-manufacture (a for example integrated circuit) are accomplished by another factory.Yet; Most factory is carrying out static discharge (Electrostatic discharge to semi-manufacture; ESD) (Electrical Overstress can't simulate these semi-manufacture and face real excessively electrically stress phenomena in next factory when EOS) testing with excessively electrical stress in test.In addition; When excessively electrically stress damage takes place in these semi-manufacture in a factory; The metal wire that is shown in this half-finished IC chip burns metal wire that phenomenon can be shown when this static discharge damage takes place and burn phenomenon and come seriously, and excessively electrically the damage that caused of stress is not quite alike with the damage that the power end short circuit is caused again.Therefore, when excessively electrically stress damage took place these semi-manufacture, the general mode that is difficult to through experiment that goes up was tested these semi-manufacture and is copied living damage.Thus, when excessively electrically stress damage takes place for this semi-manufacture, just be difficult to differentiate who should be to the damage responsibility of this excessively electrical stress on earth between factory's end and the factory end.Therefore, how accurately electronic product being carried out excessively electrical stress test has become field for this reason to need the problem of solution badly with the excessively electrically stress that quantizes this electronic product and can bear.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of excessively electrically device and its correlation technique of stress of testing electronic product, to solve the problem that prior art was faced.
According to the first embodiment of the present invention, it provides a kind of method of testing, is used for testing device to be measured.This method of testing includes the following step: should be positioned in the electric field by device to be measured; Provide power supply to start this device to be measured; And, this device to be measured is tested starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field.
According to the second embodiment of the present invention, it provides a kind of proving installation, is used for testing device to be measured, and this proving installation includes electric field generation device, power supply unit and signal generation device.This electric field generation device is used between first sheet metal and second sheet metal, producing electric field, and wherein this device to be measured is positioned between this first sheet metal and this second sheet metal.This power supply unit is coupled to this device to be measured, is used to provide power supply and starts this device to be measured.This signal generation device is coupled to this device to be measured, is used for to starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field this device to be measured being tested.
Description of drawings
Fig. 1 is the embodiment synoptic diagram of a kind of proving installation of the present invention.
Fig. 2 is the embodiment process flow diagram of method of testing of the present invention.
[main element symbol description]
100 proving installations
102 devices to be measured
104 electric field generation devices
106 power supply units
108 signal generation devices
1022 metal measuring points
1024 IC chips
1026 circuit boards
1,042 first sheet metals
1,044 second sheet metals
1082 pulse generators
1084 capacitors
1086 switches
Embodiment
In instructions and claims, used some vocabulary to censure specific element.Those of ordinary skill should be understood in the affiliated field, and hardware manufacturer may be called same element with different nouns.This instructions and follow-up claims are not used as distinguishing the mode of element with the difference of title, but the criterion that is used as distinguishing with the difference of element on function.Be open term mentioned " comprising " in instructions and claims in the whole text, so should be construed to " comprise but be not limited to ".In addition; " couple " speech and comprise any indirect means that are electrically connected that directly reach at this; Therefore; Be coupled to second device if describe first device in the literary composition, then represent this first device can directly be electrically connected in this second device, perhaps be electrically connected to this second device through other device or the intersegmental ground connection of connection hand.
With reference to figure 1.Shown in Figure 1 is embodiment synoptic diagram according to a kind of proving installation 100 of the present invention, and proving installation 100 is used for testing device 102 to be measured.Proving installation 100 includes electric field generation device 104, power supply unit 106 and signal generation device 108.Electric field generation device 104 is used between first sheet metal 1042 and second sheet metal 1044, producing electric field E (direction of dotted arrow), and device 102 wherein to be measured is positioned between first sheet metal 1042 and second sheet metal 1044.Power supply unit 106 is coupled to device 102 to be measured, is used to provide power supply Vdd and starts device 102 to be measured.Signal generation device 108 is coupled to device 102 to be measured, is used for coming device 102 to be measured is tested to starting and be positioned at least one metal measuring point 1022 input test signal St of the device to be measured 102 in the electric field E.In order to further describe spirit of the present invention place; The device to be measured 102 of present embodiment includes IC chip 1024; IC chip 1024 has many branch connecting pins (Pin) and is coupled on the circuit board 1026, and above-mentioned metal measuring point 1022 is a pin in these many branch connecting pins.
Please note; The important technology of present embodiment is characterised in that device 102 to be measured is positioned in the electric field E and is pin input test signal St device 102 to be measured being carried out excessively electrically stress test, thus the present invention not the reality of restricting signal generation device 108 make mode.In other words, any device that can produce test signal St is scope of the present invention place.In the present embodiment, signal generation device 108 only explains that with the synoptic diagram of simplifying signal generation device 108 includes pulse (Pulse) generator 1082, capacitor 1084 and switch 1086.The input end N1 of switch 1086 is coupled to the output terminal of pulse generator 1082; Pulse generator 1082 is brought in through this output and is produced pulse signal Sp; The control end N2 of switch 1086 is coupled to capacitor 1084, and the output terminal N3 of switch 1086 is used for exporting the metal measuring point 1022 of test signal St at device 102 to be measured.When pulse generator 1082 will produce test signal St, switch 1086 can be controlled to this output terminal (that is N2) and capacitor 1084 of conducting pulse generator 1082, and pulse generator 1082 also produces pulse signal Sp so that capacitor 1084 is charged.When the cross-pressure of capacitor 1084 arrives predetermined voltage; Switch 1086 can be controlled to the metal measuring point 1022 (that is N3) of conducting capacitor 1084 (that is N2) and device 102 to be measured, will be accumulated in charge discharge to the device 102 to be measured (that is test signal St) on the capacitor 1084.Thus, just can control with the ON time of adjustment switch 1086 through the voltage level of adjustment pulse signal Sp respectively the voltage level of test signal St and discharge time.In other words, through the voltage level of adjustment pulse signal Sp and the ON time of adjustment switch 1086, signal generation device 108 can produce the test signal St similar in appearance to electrostatic signal.Certainly, signal generation device 108 is not limited to use pulse generator 1082, and any device that can produce high-voltage level all belongs to scope of the present invention place.
Excessively electrically stress test is to quantize the excessively electrically stress that device 102 to be measured can bear in order correctly device 102 to be measured to be carried out, and the operation of above-mentioned proving installation 100 should meet predetermined operating process, and is as shown in Figure 2.Shown in Figure 2 is embodiment process flow diagram according to method of testing 200 of the present invention, and method of testing 200 is used for testing the excessively electrically stress that above-mentioned device to be measured 102 can bear.If note that substantially to reach identical result, the sequence of steps that does not need necessarily to shine in the flow process shown in Figure 2 is carried out, and step shown in Figure 2 not necessarily will carry out continuously, that is other step also can be inserted wherein.Method of testing 200 includes the following step:
Step 202: produce electric field E;
Step 204: device 102 to be measured is positioned in the electric field E;
Step 206: provide power supply Vdd to start device 102 to be measured; And
Step 208:, come device 102 to be measured is tested to starting and be positioned over the metal measuring point 1022 input test signal St of the device to be measured 102 in the electric field E.
At first, in step 202, in order to simulate the buildup of static electricity phenomenon that semi-manufacture are faced at factory's end truly, the present invention utilizes electric field generation device 104 between first sheet metal 1042 and second sheet metal 1044, to produce electric field E earlier.Then again device 102 to be measured is positioned between first sheet metal 1042 and second sheet metal 1044; So that the elements in the device to be measured 102 (the for example plain conductor in the IC chip 1024) are accumulated to (step 204) behind the electric charge to a certain degree, restart power supply unit 106 to provide power supply Vdd to device 102 to be measured (step 206).Thus, proving installation 100 of the present invention just can simulate semi-manufacture to have under the static charge buildup at factory's end, and this half-finished situation is given in power supply suddenly.
Then; After execution of step 206; If during the phenomenon that the plain conductors in the device to be measured 102 do not have to burn; Then then carry out step 208, that is, come device 102 to be measured is tested starting and be positioned over the metal measuring point 1022 input test signal St of the device to be measured 102 in the electric field E.As the described signal generation device 108 of above-mentioned paragraph; The voltage level of test signal St and discharge time can be controlled with the ON time of adjustment switch 1086 through the voltage level of adjustment pulse signal Sp respectively; With the test signal of generation varying strength, and judge whether the plain conductors in the device 102 to be measured have the phenomenon of burning.Further, when the plain conductor in the device 102 to be measured has the phenomenon of burning, judge that then device 102 to be measured can't be through this excessively electrical stress test under this present electric field E and this present test signal St, vice versa.Thus, after the test of being done through above-mentioned proving installation 100 and 200 pairs of devices 102 to be measured of method of testing repeatedly, excessively electrically stress that device 102 to be measured can bear just can be quantized.Certainly; Through above-mentioned proving installation 100 and method of testing 200; It can also be tested other pin on the IC chip 1024 of device 102 to be measured (or any metal measuring point of device to be measured 102), the excessively electrically stress that can bear with further quantification device 102 to be measured.
Though note that the foregoing description is positioned over device 102 to be measured carries out this excessively electrically stress test in the electric field E, it is not to represent to such an extent that to limit whole device 102 to be measured all be to be in the electric field E.In fact, with the device to be measured 102 of part be positioned over carry out in the electric field E this excessively electrically stress test can also reach result of the presently claimed invention haply, so it also belongs within the scope that claim of the present invention protects.
In sum; After the present invention is accumulated to electric charge to a certain degree with device 102 to be measured; Restart device 102 to be measured and the metal measuring point input test signal St of device 102 to be measured is carried out this excessively electrically stress test, to quantize the excessively electrically stress that device 102 to be measured can bear.
The above is merely the preferred embodiments of the present invention, and all equivalent variations and modifications of making according to claim of the present invention all should belong to the scope that the present invention is contained.
Claims (8)
1. a method of testing is used for testing device to be measured, includes:
Should be positioned in the electric field by device to be measured;
Provide power supply to start this device to be measured; And
To starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field, this device to be measured is tested.
2. method of testing according to claim 1, wherein this test signal is a pulse signal.
3. method of testing according to claim 1, wherein this metal measuring point pin that is this device to be measured.
4. method of testing according to claim 1 wherein is positioned over the step execution before the step that provides this power supply to start this device to be measured in this electric field with this device to be measured.
5. a proving installation is used for testing device to be measured, includes:
The electric field generation device is used between first sheet metal and second sheet metal, producing electric field, and wherein this device to be measured is positioned between this first sheet metal and this second sheet metal;
Power supply unit is coupled to this device to be measured, is used to provide power supply and starts this device to be measured; And
Signal generation device is coupled to this device to be measured, is used for to starting and be positioned at least one metal measuring point input test signal of this device to be measured in this electric field this device to be measured being tested.
6. proving installation according to claim 5, wherein this test signal is a pulse signal.
7. proving installation according to claim 5, wherein this metal measuring point pin that is this device to be measured.
8. proving installation according to claim 5, wherein should be to be measured after device places in this electric field, just starting this power supply unit provides this power supply to this device to be measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010256936.2A CN102375100B (en) | 2010-08-17 | 2010-08-17 | Testing apparatus and correlated test method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010256936.2A CN102375100B (en) | 2010-08-17 | 2010-08-17 | Testing apparatus and correlated test method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102375100A true CN102375100A (en) | 2012-03-14 |
| CN102375100B CN102375100B (en) | 2014-06-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010256936.2A Expired - Fee Related CN102375100B (en) | 2010-08-17 | 2010-08-17 | Testing apparatus and correlated test method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107340447A (en) * | 2016-05-03 | 2017-11-10 | 技嘉科技股份有限公司 | Test device and method of testing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6788047B1 (en) * | 2003-04-03 | 2004-09-07 | United Microelectronics Corp. | DUT board for eliminating electrostatic discharge damage |
| CN1576868A (en) * | 2003-07-08 | 2005-02-09 | 松下电器产业株式会社 | Semiconductor integrated circuit, and electrostatic withstand voltage test method and apparatus therefor |
| CN1588102A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | Breakdown test method for medium relative to time in high temperature constant electric field |
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2010
- 2010-08-17 CN CN201010256936.2A patent/CN102375100B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6788047B1 (en) * | 2003-04-03 | 2004-09-07 | United Microelectronics Corp. | DUT board for eliminating electrostatic discharge damage |
| CN1576868A (en) * | 2003-07-08 | 2005-02-09 | 松下电器产业株式会社 | Semiconductor integrated circuit, and electrostatic withstand voltage test method and apparatus therefor |
| CN1588102A (en) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | Breakdown test method for medium relative to time in high temperature constant electric field |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107340447A (en) * | 2016-05-03 | 2017-11-10 | 技嘉科技股份有限公司 | Test device and method of testing |
| CN107340447B (en) * | 2016-05-03 | 2020-07-10 | 技嘉科技股份有限公司 | Test apparatus and test method |
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| Publication number | Publication date |
|---|---|
| CN102375100B (en) | 2014-06-11 |
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Granted publication date: 20140611 |