CN101266139A - Microstructure appearance test method based on infrared white light interference technique - Google Patents
Microstructure appearance test method based on infrared white light interference technique Download PDFInfo
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- CN101266139A CN101266139A CNA2008100549085A CN200810054908A CN101266139A CN 101266139 A CN101266139 A CN 101266139A CN A2008100549085 A CNA2008100549085 A CN A2008100549085A CN 200810054908 A CN200810054908 A CN 200810054908A CN 101266139 A CN101266139 A CN 101266139A
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Abstract
The invention relates to the micro appearance test of a micro electro-mechanical MEMS component, concretely a microstructure appearance test method based on a white infrared light interference technology, which solves the problem existing in the prior art that the sidewall appearance of the deep trench structure of the MEMS component is unable to be surveyed, realized by the following steps: 1) the lossless processing of the impediment infrared transmission for the testing sidewall surface is carried out; 2) the infrared source is taken as the survey photo source, the infrared light is adjusted to be the parallel light when passing through a lenses group, is divided into a reference beam and a examination light beam by a dispersion component, the examination light beam transmits the sidewall of the deep trench structure, after reflected by the interface of the sidewall and the lossless processing, is carried on coherent superposition with the reference beam reflected by a reference mirror, forms a interference fringe pattern; 3) the interference fringe pattern is transmitted to the computer after passing through an optical lens, the CCD image sensor, so that the three dimensional appearance chart of the sidewall measured is obtained by analyzing and processing. The invention overcomes the shortcoming existing in the prior art that the deep trench structure surveying is unable to be realized and the application domain is wild.
Description
Technical field
The present invention relates to the micromorphology test of micro electronmechanical MEMS device, specifically be a kind of microstructure appearance test method of testing at the trenched side-wall pattern in the silicon system MEMS device, especially at the deep groove structure of high-aspect-ratio based on infrared white light interference technique.
Background technology
Development along with micro-electromechanical system (MEMS), also more and more higher to microstructure institute requirement, for present MEMS suitable to fine structure with high depth-width ratio (being the deep groove structure of high-aspect-ratio), as: adopt the structure of sidewall capacitance sampling and the comb structure of resonance gyro, sidewall roughness directly affects the performance of micro mechanical device, as: driving force, frequency of utilization scope, sensitivity and displacement etc.; The width of MEMS suitable to fine structure with high depth-width ratio is 1～10 μ m now, highly is 10～500 μ m, and depth-to-width ratio is generally 10～100: between 1.Along with the development of this suitable to fine structure with high depth-width ratio will be played crucial effect for promoting micro electro mechanical system (MEMS) technology in the application in many fields such as Aeronautics and Astronautics, electronics, chemical industry, biology, medical treatment, electromechanics, corresponding measuring technology and detecting instrument also continue to bring out in technology simultaneously.
Existing both at home and abroad roughly have two kinds to micro structural component geometry test technology: dissect the test of test and profile; For dissecting test, the most frequently used instrument will be counted scanning electron microscope SEM and atomic force microscope, they can amplify thousands of times to test zone, can see the small shape characteristic at each position clearly clearly, but, they can only surface measurements two-dimentional pattern, because the limitation on its detection principle makes for the groove structure with high-aspect-ratio, the bottom of its groove just can't be seen clearly with the pattern of side, can only measure by the method for destroying device architecture, be not suitable for on-line testing, can not provide effective help to improving device performance in real time.
Interfere measurement technique is to be a special kind of skill that the basis is measured with the optical interference principle, compares with general optical imagery measuring technique, and interferometry has characteristics such as wide range, high sensitivity, high precision.In recent years, the profile method of testing of utilizing this principle to grow up gradually is the contactless topography measurement device of representative with the white light interferometer, and this type of device need not contact sample surfaces, need not to destroy device architecture, can finish three-dimensional appearance test device architecture.Ripe both at home and abroad at present like product has a series of white light interference properties of product of the zygo brilliance of the TalySurfCCI of the Britain gloomy company limited of Taylor Hope, German Polytec company and U.S. Zygo company to be widely used.For test result, its lateral resolution is in the um magnitude, and longitudinal frame can reach the nm magnitude, can obtain high-resolution three-dimensional surface figure by the analysis to white-light spectrum.
Although the measuring method based on white light interference technique is in the ascendant, Yan Zhi equipment also constantly occurs in succession, but in view of the wavelength measurement limit of white light and the restriction of measuring accuracy thereof, this type of testing tool still can't be seen its side surface pattern to the deep groove structure of high-aspect-ratio.
Summary of the invention
The present invention provides a kind of microstructure appearance test method based on infrared white light interference technique in order to solve the problem that existing measuring technology can't be measured the sidewall pattern of deep groove structure in the MEMS device.
The present invention adopts following technical scheme to realize: based on the microstructure appearance test method of infrared white light interference technique, realize with the following step:
1), on the basis of the sidewall surfaces pattern to be measured that does not damage the device under test deep groove structure, stop the lossless process of infrared transmitting in sidewall surfaces to be measured;
2), with infrared light supply as measurement light source, the infrared light that is sent by infrared light supply becomes parallel beam after the lens adjustment, parallel beam is divided into reference beam and detects light beam by light-splitting device, detect the sidewall to be measured of light beam transmission deep groove structure, after the interface reflection of sidewall and lossless process, with the relevant superposition of the reference beam that reflects through reference mirror, form the light and dark interference fringe pattern that characterizes the sidewall surfaces pattern;
3), the interference fringe pattern converts electric signal to by ccd image sensor through optical lens, transfer to computing machine, and use the conventional images reconstruction software signal is carried out the three-dimensional appearance figure that analyzing and processing gets the sidewall of surveying.
The micromechanism of utilization of the present invention MEMS device manufacturing process material-silicon under the infrared light wavelength is transparent relatively characteristic, with infrared light as measurement light source, the sidewall siliceous to be measured of infrared transmission deep groove structure, and on the interface of siliceous sidewall and lossless process employing material reflection and scattering take place, with the relevant superposition of reference beam, can obtain reflecting the interference fringe pattern of the surface profile of this deep trench sidewall, then, convert electric signal through optical lens to by ccd image sensor, handle the three-dimensional appearance figure that obtains institute's depth measurement groove structure sidewall surfaces via Computer Analysis.Described lossless process is that those skilled in the art can realize, therefore is not described in detail.
Compared with prior art, the present invention is owing to used the transmissison characteristic of infrared light, can measure the deep groove structure of complexity, broken through the shortcoming that existing measuring technique can't realize that deep groove structure is measured, the present invention is except that being applied to have the MEMS device of deep groove structure, be applicable to that also there are the contour structure of height fluctuating and the measurement of its surfaceness in the surface, also can be applicable to reflective material, application is wide.
Description of drawings
Fig. 1 is the test philosophy figure of the method for the invention;
Fig. 2 is a synoptic diagram of measuring the deep trench sidewall of high-aspect-ratio with the method for the invention;
Among Fig. 1: the 1-device under test; The 2-infrared light supply; The 3-lens combination; The 4-light-splitting device; The 5-reference mirror; The 6-CCD imageing sensor.
Embodiment
Based on the microstructure appearance test method of infrared white light interference technique, realize with the following step:
1), on the basis of the sidewall surfaces pattern to be measured that does not damage device under test 1 deep groove structure, stop the lossless process of infrared transmitting in sidewall surfaces to be measured;
2), (as shown in Figure 1) with infrared light supply 2 as measurement light source, the infrared light that is sent by infrared light supply 2 becomes parallel beam after lens combination 3 is adjusted, parallel beam is divided into reference beam and detects light beam by light-splitting device 4, detect the sidewall to be measured of light beam transmission deep groove structure, after the interface reflection of sidewall and lossless process, with the relevant superposition of the reference beam that reflects through reference mirror 5, form the light and dark interference fringe pattern that characterizes the sidewall surfaces pattern;
3), the interference fringe pattern converts electric signal to by ccd image sensor 6 through optical lens, transfer to computing machine, and use the conventional images reconstruction software signal is carried out the three-dimensional appearance figure that analyzing and processing gets the sidewall of surveying.
During concrete the test, consider degree of transmission and test needs, described infrared light supply employing is the infrared light supply in the 800-1200nm spectral range; Because can there be different shape characteristics in sidewall surfaces to be measured, want interference all to occur in any zone, just need to regulate the position of device under test, produce the phase change of nanometer scale, make the bright level central bright fringe of far field that occurs at side wall surface to be measured be subjected to displacement variation, we are by being equipped with piezoelectric actuator and three-dimensional adjustable platform respectively for reference mirror and device under test, regulate the luffing angle of reference mirror and device under test, position, the left and right sides, thereby make infrared light transmission cross the broach that closes on deep trench to be measured, be radiated at the interface of deep trench sidewall to be measured and lossless process, through reflecting to form interference fringe, for example: to the degree of depth is 50um, width is 5um, depth-to-width ratio is that 10: 1 deep trench comb structure sidewall is measured, it is tilted 11.3 °, the pattern of sidewall the first half can obtain, and for the latter half sidewall, infrared transmission is crossed the thickness (as shown in Figure 2) of a broach, get to the latter half of sidewall, thereby realize the measurement of whole sidewall; To the degree of depth is that 100um, width are that 5um, depth-to-width ratio are that 20: 1 deep trench comb structure sidewall is measured, and it is tilted 5.7 °, obtains the pattern of whole sidewall.
Claims (2)
1, a kind of microstructure appearance test method based on infrared white light interference technique is characterized in that realizing with the following step:
1), on the basis of the sidewall surfaces pattern to be measured that does not damage device under test (1) deep groove structure, stop the lossless process of infrared transmitting in sidewall surfaces to be measured;
2), with infrared light supply (2) as measurement light source, the infrared light that is sent by infrared light supply (2) becomes parallel beam after lens combination (3) is adjusted, parallel beam is divided into reference beam and detects light beam by light-splitting device (4), detect the sidewall to be measured of light beam transmission deep groove structure, after the interface reflection of sidewall and lossless process, with the relevant superposition of the reference beam that reflects through reference mirror (5), form the light and dark interference fringe pattern that characterizes the sidewall surfaces pattern;
3), the interference fringe pattern converts electric signal to by ccd image sensor (6) through optical lens, transfer to computing machine, and use the conventional images reconstruction software signal is carried out the three-dimensional appearance figure that analyzing and processing gets the sidewall of surveying.
2, the microstructure appearance test method based on infrared white light interference technique according to claim 1 is characterized in that it is the interior infrared light supply of 800-1200nm spectral range that described infrared light supply (2) adopts.
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Cited By (18)
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| CN101625231B (en) * | 2009-04-14 | 2010-12-08 | 华中科技大学 | White light interference profile meter |
| CN102538707A (en) * | 2011-12-13 | 2012-07-04 | 中科中涵激光设备（福建）股份有限公司 | Three dimensional localization device and method for workpiece |
| CN102944169A (en) * | 2012-11-26 | 2013-02-27 | 中国科学院长春光学精密机械与物理研究所 | Simultaneous polarization phase-shifting interferometer |
| CN103292747A (en) * | 2013-05-20 | 2013-09-11 | 北京大学 | Method and device for measuring surface roughness of side walls of FinFET (fin field-effect transistor) devices |
| CN105758329A (en) * | 2014-12-18 | 2016-07-13 | 财团法人金属工业研究发展中心 | Optical surface profile scanning system |
| CN106370133A (en) * | 2015-07-24 | 2017-02-01 | 中国科学院大连化学物理研究所 | Method of characterizing hydrogel microsphere surface morphology in wet in-situ condition |
| CN106705856A (en) * | 2015-07-31 | 2017-05-24 | 南京理工大学 | Near-infrared displacement sensing device based no broadband spectral domain microscopic interferometry and micro displacement measurement method thereof |
| CN106855395A (en) * | 2015-12-08 | 2017-06-16 | 中国航空工业第六八研究所 | A kind of optical detection evaluation method of silicon chip anode linkage technique deformation |
| CN107664629A (en) * | 2016-07-28 | 2018-02-06 | 罗伯特·博世有限公司 | For analyzing measurement and/or analytical equipment and the method on travel road surface |
| CN107796330A (en) * | 2017-09-30 | 2018-03-13 | 中国科学院长春光学精密机械与物理研究所 | A kind of white light interference measuring three-dimensional morphology optical system |
| WO2020042190A1 (en) * | 2018-08-31 | 2020-03-05 | 苏州大学张家港工业技术研究院 | Method and device for measuring microstructure topography based on dispersion spectrum coding |
| CN110926362A (en) * | 2019-11-27 | 2020-03-27 | 中国科学技术大学 | Optical detection method for microstructure with large height-width ratio |
| CN111213029A (en) * | 2018-09-27 | 2020-05-29 | 合刃科技（深圳）有限公司 | Method, device and system for detecting defects of transparent/semitransparent material |
| CN111412861A (en) * | 2020-03-31 | 2020-07-14 | 天津大学 | Linear white light surface profile measuring method |
| CN113465534A (en) * | 2021-06-25 | 2021-10-01 | 浙江大学 | Micro-nano deep groove structure rapid measurement method based on white light interference |
| CN113607084A (en) * | 2021-08-11 | 2021-11-05 | 浙江大学 | Method for measuring submillimeter groove structure based on white light interference and SPGD |
| CN113932709A (en) * | 2021-10-08 | 2022-01-14 | 天津大学 | Optical measurement system and method for micron line width deep silicon groove |
| CN114383533A (en) * | 2022-01-12 | 2022-04-22 | 哈尔滨工业大学 | Dark field confocal microscopic width fixed value measuring method |
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2008
- 2008-04-30 CN CNA2008100549085A patent/CN101266139A/en active Pending
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101625231B (en) * | 2009-04-14 | 2010-12-08 | 华中科技大学 | White light interference profile meter |
| CN102538707A (en) * | 2011-12-13 | 2012-07-04 | 中科中涵激光设备（福建）股份有限公司 | Three dimensional localization device and method for workpiece |
| CN102538707B (en) * | 2011-12-13 | 2013-06-12 | 中科中涵激光设备（福建）股份有限公司 | Three dimensional localization device and method for workpiece |
| CN102944169A (en) * | 2012-11-26 | 2013-02-27 | 中国科学院长春光学精密机械与物理研究所 | Simultaneous polarization phase-shifting interferometer |
| CN102944169B (en) * | 2012-11-26 | 2015-08-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of synchronous polarization phase-shifting interferometer |
| CN103292747A (en) * | 2013-05-20 | 2013-09-11 | 北京大学 | Method and device for measuring surface roughness of side walls of FinFET (fin field-effect transistor) devices |
| CN103292747B (en) * | 2013-05-20 | 2016-03-02 | 北京大学 | A kind of method and device measuring FinFET side wall surfaceness |
| CN105758329A (en) * | 2014-12-18 | 2016-07-13 | 财团法人金属工业研究发展中心 | Optical surface profile scanning system |
| CN106370133B (en) * | 2015-07-24 | 2019-01-25 | 中国科学院大连化学物理研究所 | A kind of method of hygrometric state in-situ characterization hydrogel microsphere surface topography |
| CN106370133A (en) * | 2015-07-24 | 2017-02-01 | 中国科学院大连化学物理研究所 | Method of characterizing hydrogel microsphere surface morphology in wet in-situ condition |
| CN106705856B (en) * | 2015-07-31 | 2019-05-14 | 南京理工大学 | Near-infrared displacement sensing apparatus and micro-displacement measuring method based on broadband light spectral domain Microscopic inteferometry |
| CN106705856A (en) * | 2015-07-31 | 2017-05-24 | 南京理工大学 | Near-infrared displacement sensing device based no broadband spectral domain microscopic interferometry and micro displacement measurement method thereof |
| CN106855395A (en) * | 2015-12-08 | 2017-06-16 | 中国航空工业第六八研究所 | A kind of optical detection evaluation method of silicon chip anode linkage technique deformation |
| CN107664629A (en) * | 2016-07-28 | 2018-02-06 | 罗伯特·博世有限公司 | For analyzing measurement and/or analytical equipment and the method on travel road surface |
| CN107796330A (en) * | 2017-09-30 | 2018-03-13 | 中国科学院长春光学精密机械与物理研究所 | A kind of white light interference measuring three-dimensional morphology optical system |
| CN107796330B (en) * | 2017-09-30 | 2018-09-21 | 中国科学院长春光学精密机械与物理研究所 | A kind of white light interference measuring three-dimensional morphology optical system |
| WO2020042190A1 (en) * | 2018-08-31 | 2020-03-05 | 苏州大学张家港工业技术研究院 | Method and device for measuring microstructure topography based on dispersion spectrum coding |
| CN111213029A (en) * | 2018-09-27 | 2020-05-29 | 合刃科技（深圳）有限公司 | Method, device and system for detecting defects of transparent/semitransparent material |
| CN110926362B (en) * | 2019-11-27 | 2021-07-06 | 中国科学技术大学 | Optical detection method for microstructure with large height-width ratio |
| CN110926362A (en) * | 2019-11-27 | 2020-03-27 | 中国科学技术大学 | Optical detection method for microstructure with large height-width ratio |
| CN111412861A (en) * | 2020-03-31 | 2020-07-14 | 天津大学 | Linear white light surface profile measuring method |
| CN111412861B (en) * | 2020-03-31 | 2022-02-11 | 天津大学 | Linear white light surface profile measuring method |
| CN113465534A (en) * | 2021-06-25 | 2021-10-01 | 浙江大学 | Micro-nano deep groove structure rapid measurement method based on white light interference |
| CN113465534B (en) * | 2021-06-25 | 2022-04-19 | 浙江大学 | Micro-nano deep groove structure rapid measurement method based on white light interference |
| WO2022267687A1 (en) * | 2021-06-25 | 2022-12-29 | 浙江大学 | Micro-nano deep trench structure fast measurement method on basis of white light interference |
| US11733034B2 (en) | 2021-06-25 | 2023-08-22 | Zhejiang University | Fast measurement method for micro-nano deep groove structure based on white light interference |
| CN113607084A (en) * | 2021-08-11 | 2021-11-05 | 浙江大学 | Method for measuring submillimeter groove structure based on white light interference and SPGD |
| CN113932709A (en) * | 2021-10-08 | 2022-01-14 | 天津大学 | Optical measurement system and method for micron line width deep silicon groove |
| CN114383533A (en) * | 2022-01-12 | 2022-04-22 | 哈尔滨工业大学 | Dark field confocal microscopic width fixed value measuring method |
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