CN101265030A - Substrate thinning apparatus and method for thinning substrate - Google Patents
Substrate thinning apparatus and method for thinning substrate Download PDFInfo
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- CN101265030A CN101265030A CNA2008100963263A CN200810096326A CN101265030A CN 101265030 A CN101265030 A CN 101265030A CN A2008100963263 A CNA2008100963263 A CN A2008100963263A CN 200810096326 A CN200810096326 A CN 200810096326A CN 101265030 A CN101265030 A CN 101265030A
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- 239000000758 substrate Substances 0.000 title claims abstract description 216
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000011521 glass Substances 0.000 claims abstract description 127
- 238000005530 etching Methods 0.000 claims abstract description 117
- 239000003153 chemical reaction reagent Substances 0.000 claims description 64
- 230000005484 gravity Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000007921 spray Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005507 spraying Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005554 pickling Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
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- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000009736 wetting Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Glass (AREA)
- Weting (AREA)
Abstract
The present invention provides a substrate thinning apparatus and a method of thinning glass substrate by using the substrate thinning apparatus; wherein, the substrate thinning apparatus comprises supporting plate for supporting the to-be-etched substrate, cavity for containing the supporting plate and nozzle for ejecting the etchant for etching the substrate; wherein, the etching plate is aslant arranged and the substrate supported by the supporting plate is aslant arranged too.
Description
CROSS-REFERENCE TO RELATED PATENT
The application requires the interests at the 10-2007-0025590 korean patent application of Korea S Department of Intellectual Property submission on March 15th, 2007, and the disclosure of this application is incorporated herein by reference in this integral body.
Technical field
The present invention relates to the method for a kind of substrate thinning apparatus and a kind of thinning glass substrate, more specifically, relate to a kind of etching glass substrate that can be used for method on the glass substrate that is arranged in the obliquity place by the substrate thinning apparatus and a kind of thinning glass substrate that etching reagent are flowed make the glass substrate attenuation.
Background technology
Usually, need the back lighting device of processing display or be used for the glass substrate of indicating meter, make them become light and thin.Give an example, the processing that is used for the glass substrate of mobile telephone has developed into to a certain degree, promptly, when mobile telephone is in development when early stage, typical mobile telephone has the total thickness of about 45mm and the weight of about 1.3kg, yet modern typical mobile telephone can have the total thickness of about 6.9mm and the weight of about 63g.Recently, produced liquid-crystal display (LCD), and research has been directed to so that crashproof directly is attached to and makes thin and light LCD on the LCD glass for the thinnest indicating meter with 0.82mm glass substrate.
In order to make thin and light indicating meter, various etchings by glass substrate come the method for thinning glass substrate to be disclosed, the example of these methods has: pickling process, and wherein, a plurality of glass substrates come this glass substrate of etching in the bath (bath) by vertically being immersed in; Spraying method wherein comes the etching glass substrate by all spraying etching reagent with predetermined spray pressure on two side surfaces of the glass substrate that stands vertically; And downward thinning partition method (downward thin-separation method), wherein by making etching reagent begin to flow the etching glass substrate at two side surfaces of the substrate that stands vertically from the top of glass substrate.
Fig. 1 is the side cross-sectional view that is used to utilize traditional glass substrate thinning apparatus of pickling process etching glass substrate.
In the method for the equipment that uses Fig. 1, mixing system blended high concentration of hydrofluoric acid (HF) solution by costliness is used as the etching reagent that is used for the etching glass substrate.The dry air of installing in the bottom of HF etching bath 1 high-purity nitrogen or cleaning sprays into the bubble plate 50 of HF etching bath 1 and can make bubble jet pass the pressed sheet (punching plate) 60 of glass substrate, and the lid 30 that covers top is installed in HF etching bath 1.Form water bag (water pocket) 40 to seal the inboard of HF etching bath 1 by the gap of removing lid 30.Ultrapure water 41 is collected in the water bag 40 to stop deleterious HF gas leakage to outside.
In the cleaning process in the QDR groove, spray ultrapure water, will be attached to being washed of glass baseplate surface by the material of eating away and HF solution by the spray appliance that is installed in the QDR groove.In the cleaning process in the QDR groove, spray nitrogen by bubble plate on the bottom that is installed in the QDR groove 50 and pressed sheet 60 and carry out auxiliary the cleaning.
Yet, in above-mentioned pickling process, be difficult to glass substrate etching to accurate trickle thickness.That is, this etch process is not accurate.In addition, the mud that produces during the etching and the difficult treatment of white powder, and also these materials attach to glass substrate, thus cause relatively poor quality product.In addition, in pickling process, need a large amount of ultrapure waters, the rate of recovery of etching reagent is low, and the bubble generator must be arranged.If exerting pressure to extremely thin glass substrate during the etching or after the etching, then the quality through overetched glass substrate can descend after etching.
Under the situation of spraying method, because being sprayed on the glass substrate, etching reagent applies powerful stress to glass substrate, the strong reactivity of the ozzle that vertically crosses can cause new etching reagent and stirring for the various salt of the by product of oxidizing reaction, thereby very difficult release etch agent from this mixture, therefore, the rate of recovery of etching reagent is very low.
Under the situation of the downward method of thinning glass substrate, because being fixed on the thickness of the interior glass substrate of the anchor clamps of support glass substrate can change, glass substrate can be subjected to strenuous vibration two lip-deep flowing of substrate according to etching reagent, therefore, variable thickness can occur behind the etching glass substrate causes.In addition, because the variation of thickness, during the etching of glass substrate, the ozzle of both sides and the gap of the best between the glass substrate change, and therefore, regulate the ozzle gap in real time and are absolutely necessary for the etching reagent that sprays accurate consumption.In addition, in present method, because etching is by carrying out from the top of glass substrate mobile etching reagent, therefore according to the sealed state on the top of glass substrate or the validity of sealing agent serious degradation may appear.In addition, because during the moving of etching reagent between mobile etching reagent and the glass substrate chemical reaction can take place at once on the glass baseplate surface, so etching speed is very slow, and also etching speed is uncontrollable.
Summary of the invention
In order to solve above-mentioned and/or other problem, the invention provides a kind of etched substrate thinning apparatus of the precise thickness that can be used for control basal plate and a kind of method of thin substrate.
The present invention also provide a kind of can be to the method that just applies substrate thinning apparatus and a kind of thin substrate of mechanical stress at etched substrate.
The present invention also provides a kind of method that can improve substrate thinning apparatus and a kind of thin substrate of the rate of recovery that is used for etched etching reagent.
The present invention also provides a kind of substrate thinning apparatus of the difference that can remove etched thickness at the fixed cell place of fixing base and a kind of method of thin substrate.
The present invention also provides a kind of method at the substrate thinning apparatus and a kind of thin substrate that do not need to readjust the gap between ozzle and the substrate during the etching of substrate.
The present invention also provides a kind of and can be used in etching substrates and flow to the substrate thinning apparatus of minimize variations of consumption of etching reagent of substrate and a kind of method of thin substrate.
The present invention also provides a kind of can all realize real-time etched substrate thinning apparatus on two surfaces of the substrate with different thickness.
According to an aspect of the present invention, provide a kind of substrate thinning apparatus, described substrate thinning apparatus comprises: support the back up pad for the treatment of etched substrate; The chamber that holds back up pad; Be used for the nozzle of the etching reagent of etching substrates with injection, wherein said back up pad is obliquely installed, and also is obliquely installed by the back up pad substrate supported.
Substrate can be a glass substrate.
Back up pad can comprise tilting axis.
Can be by control the angle of inclination of back up pad with respect to tilting axis inclination back up pad.
Substrate thinning apparatus can also be included between substrate and the back up pad substrate is fixed on the fixed cell on the back up pad.
Nozzle can comprise that dependence gravity direct etch agent mobile flow plate and at least one are from outstanding shoulder unit, the surface of flow plate.
The surface of flow plate can tilt.
Nozzle can be arranged on the upper end of substrate, so that etching reagent can be mobile along the inclined surface of substrate from the upper end of substrate.
A kind of method of using the substrate thinning apparatus thin substrate is provided according to another aspect of the present invention, and described method comprises step: set the angle of inclination for the treatment of etched substrate; And the etching reagent that is used in etching substrates flows on the surface of substrate.
Etching reagent can be mobile along the inclined surface of substrate from the upper end of substrate.
Can realize having the setting of the substrate at angle of inclination by back up pad with respect to tilting axis inclination supporting substrate.
Etching reagent can flow on the surface of glass substrate with steady state.
Description of drawings
Above-mentioned feature and advantage with other of the present invention will become clearer by the exemplary embodiments that present invention will be described in detail with reference to the accompanying, wherein:
Fig. 1 is the side cross-sectional view of traditional glass substrate thinning apparatus;
Fig. 2 is the side cross-sectional view of substrate thinning apparatus according to an embodiment of the present;
Fig. 3 is the Zoom Side cross-sectional view of the nozzle of Fig. 2;
Fig. 4 is the side cross-sectional view according to the base plate supports plate of the substrate thinning apparatus of another kind of embodiment of the present invention; And
Fig. 5 is the schema that shows the method for thin substrate according to an embodiment of the invention.
Embodiment
Now with reference to the accompanying drawing that has shown exemplary embodiments of the present invention the present invention is described more fully.
Fig. 2 is the side cross-sectional view of substrate thinning apparatus 100 according to an embodiment of the present.
Back up pad 104 is obliquely installed, and the glass substrate 112 that is supported by back up pad 104 also is obliquely installed.That is,, set the back up pad 104 of support glass substrate 112 obliquely in order to be obliquely installed glass substrate 112.
The back up pad 104 of support glass substrate 112 can have different shape, needs only back up pad 104 support glass substrate 112 obliquely.According to present embodiment, the back up pad 104 of the support glass substrate 112 on the back side of glass substrate 112 is parallel with glass substrate 112.
For back support glass substrate 112, between glass substrate 112 and back up pad 104, install and fix unit 114 from glass substrate 112.Do not separate for glass substrate 112 is fixed on the back up pad 104, fixed cell 114 is set is connected to back up pad 104 with the back side with glass substrate 112 with back up pad 104.
Back up pad 104 comprises tilting axis 110.The specific part of the back up pad 104 of holding tilting axis 110 is formed on from the protrusion unit 108 of the outstanding predetermined height in the back side of back up pad 104.
If back up pad 104 has the thickness that is enough to hold tilting axis 110, then can protrusion unit 108 be installed in the sidepiece of back up pad 104, and not need to use outstanding protrusion unit 108 by forming through hole.
Tilting axis 110 longitudinally can be installed in the central authorities of back up pad 104.Yet the position of tilting axis 110 is not restricted, and can determine according to the weight of back up pad 104 or the distribution of weight of back up pad 104 when glass substrate 112 is installed.
Because the back up pad 104 of Fig. 2 is side-views, therefore in Fig. 2, be not shown clearly in tilting axis 110 where partly the supporting that back up pad 104 rotations are centered on by substrate thinning apparatus 100.Tilting axis 110 is arranged on holds in the etching chamber 106 that back up pad 104 and etching take place, and preferably can be connected also and rotatably be supported on the described sidewall with the sidewall of chamber 102.Alternatively, can tilting axis 110 be supported on the extra rotating supporting member by comprising the extra rotating supporting member of the etching chamber 106 that is arranged in chamber 102.
Be tilted on the upper end of glass substrate 112 of support and comprise nozzle 116, described nozzle can make the chemical ingredients (for example, hydrofluoric acid (HF) solution) of etching glass substrate 112 flow on glass substrate 112.
Supply in the mode of steady state flow to the etching reagent of the surface of glass substrate 112 supply by nozzle 116.
Frictional force is for few with the heeling error of the influence of the mobility of the etching reagent of steady state supply and glass substrate 112.Therefore, the translational speed of etching reagent is owing to frictional force reduces, and therefore, the general time that etching reagent and glass substrate 112 meet is long more than the time in traditional downward thinning partition method of etching reagent perpendicular flow.Therefore, the etching fast development of being undertaken by etching reagent, and can realize consistent etching speed.
Although do not show, treat under the situation of etched glass substrate 112 yet on two surfaces of back up pad 104, install regularly, can carry out bilateral etching or one-sided etching around the inclination of tilting axis 110 by back up pad 104, therefore, can carry out the etching of various intensity.
If change the angle of inclination of glass substrate 112,, therefore must change the position of nozzle 116 then because the horizontal direction position of the upper end of glass substrate 112 and vertical direction position change.Therefore, after setting the angle of inclination of glass substrate 112, locate nozzle 116 with the position of the upper end of the glass substrate 112 that has moved with being consistent.In case set the inclination of glass substrate 112 and set the position of nozzle 116, during etching process, just do not needed to regulate the position of nozzle 116.This is because the etching reagent of nozzle 116 flows out the upper end that the injection unit that is passed through contacts glass substrate 112 obliquely, therefore, extra gap can not occur during the etching.
Although do not show, yet after a plurality of glass substrates being set abreast or each other, can flow out obliquely by etching reagent with nozzle with the size that covers whole base plate with piling up mutually.
To be arranged at the fixed cell 114 of fixing glass substrate 112 on the back up pad 104 on the back side of glass substrate 112 of inclination, therefore, fixed cell 114 is separated with mobile etching reagent on the surface of glass substrate 112.Therefore, fixed cell 114 so that the not etched dose pollution of fixed cell 114 support glass substrate 112 in stable conditionly.
With reference to Fig. 2, fixed cell 114 is fixed on glass substrate 112 on the back up pad 104 with needle-like.Yet the shape of fixed cell 114 is not restricted, and can form the various structures that glass substrate 112 stably can be fixed on the back up pad 104.
Fig. 3 is the cross sectional representation of the nozzle 116 of Fig. 2.
With reference to Fig. 3, nozzle 116 comprises the storage area 120 and the main body 122 of temporarily stored etching reagent, and described main body comprises the bottom that is arranged on storage area 120 surge chamber 130 with a small amount of etching reagent of temporarily stored.Below the bottom of main body 122, form first pilot unit 124 and have from second pilot unit 126 of first pilot unit, 124 vertically extending cylinder form with tapered side, that is, described first pilot unit and described second pilot unit form the part that storage area 120 is connected to surge chamber 130.Surge chamber 130 is formed by the formed base plate 128 of second pilot unit 126 and second pilot unit, 126 belows.At least one side in the left side of base plate 128 and the right side is formed slopely towards a direction, to form the mobile flow plate 132 of direct etch agent.Flow plate 132 extends as a unit with base plate 128.
The bottom of surge chamber 130 is formed by base plate 128, and a side of base plate 128 is connected to main body 122.The opposite side of base plate 128 is opened on the vergence direction of flow plate 132.
In this case, on the surface of flow plate 132, form at least one and project upwards the shoulder unit 134,136 and 138 of preset height.The shoulder unit 134 that is provided with near base plate 128 constitutes surge chamber 130 with base plate 128.
Mobile route with the etching reagent in the nozzle 116 of said structure is represented by the arrow among Fig. 3.With reference to Fig. 3, the etching reagent in the storage area 120 enters surge chamber 130 along first pilot unit 124 and second pilot unit 126, and the bottom of described surge chamber is made of base plate 128.In this case, surge chamber 130 is except all being closed towards the direction that forms flow plate 132, and forms the shoulder unit 134 that projects upwards predetermined height on base plate 132.
Therefore, etching reagent can not overflow from shoulder unit 134, till 130 etched doses of fillings of surge chamber reach the projecting height of shoulder unit 134.When surge chamber 130 is filled with the etching reagent of predetermined amount and etching reagent when overflowing, etching reagent flows through shoulder unit 134, flows into the space that is formed by next shoulder unit 136, fills this space then till this etching reagent overflows from shoulder unit 136.The next space that is formed by shoulder unit 138 also is filled with etching reagent, till etching reagent overflows from shoulder unit 138.In this manner, etchant stream is crossed a plurality of cushioning pockets and can 120 beginnings directly do not flowed on the surface of the flow plate 132 that tilts from the storage area.Therefore, although reduced the width of the terminal portions of nozzle 116, the flow velocity of etching reagent does not increase, and therefore the etching reagent of unanimity amount can be supplied to glass substrate 112.
Employed etching reagent can be 28 to 50% HF solution among the present invention.
In Fig. 3, only on the left direction of base plate 128, form flow plate 132; Yet, can on a plurality of directions, form flow plate 132, so that etching reagent can spray on a plurality of directions, for example, spray in the left side and/or spray on the right side.
Fig. 4 is the side cross-sectional view of modification of the fixed cell 114 of Fig. 2.
Back up pad 104 among similar Fig. 2, back up pad 104 ' is arranged on the back side of glass substrate 112, and back up pad 104 ' comprises tilting axis 110 ', so that glass substrate 112 tilts and can come the angle of inclination of feed glass substrate 112 by the inclination that centers on tilting axis 110 '.Go up formation protrusion unit 108 ' to guarantee having enough spaces to form tilting axis 110 ' in back up pad 104 '.
Go up in the fixing glass substrate 112 in back up pad 104 ', go up landing in back up pad 104 ', can use two end units of insertion back up pad 104 ' and the unitary bracket-shaped fixed cell 170 in two ends of glass substrate 112 in order to prevent glass substrate 112.
In this case, bracket-shaped fixed cell 170 is formed by the material that does not react with etching reagent.
Fig. 5 is the schema that shows the method for using above-mentioned substrate thinning apparatus 100 thin substrates.
With reference to Fig. 5, glass substrate is installed in (S1) on the back up pad, then ultraviolet ray (UV) is radiated (S2) on the glass substrate.In the operation of radiation UV ray, the UV ray can have 200 to the wavelength of 600nm, and can use UV lamp greater than 20W with step mode radiation UV ray.Glass substrate 112 before the etching has hydrophobicity and has 7 degree or bigger contact angles.Yet after 10 seconds of UV x radiation x or longer time, the substrate of glass substrate is changed into wetting ability and is had 7 degree or littler contact angles.Therefore, the organic pollutant that may be attached to glass baseplate surface is removed from the surface that this is changed characteristic.
By spraying pure water by pure water ozzle for auxiliary ozzle, form nascent moisture film (primary water film) on the surface of hydrophilic glass substrate (S3) becoming, make therefore that the surface of glass substrate is temporary transient to become wet.Then, glass substrate is moved to be used for etched chamber.
In described chamber, set the angle of inclination (S4) of glass substrate.Behind the angle of inclination of setting glass substrate, make etching reagent mobile (S5) on glass substrate by said nozzle.By after etching reagent being flowed on the glass substrate finish the etching of glass substrate, form secondary moisture film (secondary water film) (S6) in the process that glass substrate is moved to the chamber that is used for cleaning.At last, clean glass substrate (S7).
In the etching of the glass substrate that passes through said process, etching reagent is flowed with stable status by the slanted glass substrate.Therefore, glass substrate can be thinned to ideal thickness.
Method according to substrate thinning apparatus of the present invention and thinning glass substrate can provide following advantage.
At first, can control etching, and can prevent because the expansion of the error on the glass substrate that ripple or indenture caused that bubble caused to accurate substrate thickness.
Secondly, can therefore can not improve the quality of glass substrate to treating that etched glass substrate applies mechanical stress.
The 3rd, can improve the rate of recovery of the used etching reagent of etching glass substrate, particularly can improve 95% or more.
The 4th, can remove the etched thickness difference at the fixed cell place of fixing glass substrate.
The 5th, during the etching of glass substrate, do not need to readjust the gap between ozzle and the glass substrate, therefore can increase work efficiency.
The 6th, the etching reagent of etching glass substrate can minimize the consumption variation error of mobile etching reagent on glass substrate.
The 7th, can prevent that etching reagent from mixing before etching and afterwards.
The 8th, by the simple rotation of back up pad, both can fill order's lateral erosion carve, also can carry out the bilateral etching.
The 9th, the polishing process in the subsequent process can be minimized, therefore reduce working load.
The tenth, compare with downward thinning partition method, can reduce the vibrations of the glass substrate during the etching or move.
Although the present invention has been carried out concrete demonstration and explanation with reference to exemplary embodiments of the present invention, but it will be apparent to those skilled in the art that the variation that under the situation that does not break away from the essence of the present invention that limits by following claim and scope, can make various forms and details therein.
Claims (13)
1. substrate thinning apparatus comprises:
The back up pad of etched substrate is treated in support;
The chamber that holds described back up pad; With
Injection is used for the nozzle of the etching reagent of the described substrate of etching,
Wherein said back up pad is obliquely installed, and the described substrate that is supported by described back up pad also is obliquely installed.
2. substrate thinning apparatus according to claim 1, wherein said substrate is a glass substrate.
3. substrate thinning apparatus according to claim 2, wherein said back up pad comprises tilting axis.
4. substrate thinning apparatus according to claim 3 is wherein controlled the angle of inclination of described back up pad by the described back up pad that tilts with respect to described tilting axis.
5. substrate thinning apparatus according to claim 4 also is included between described substrate and the described back up pad described substrate is fixed on the fixed cell on the described back up pad.
6. substrate thinning apparatus according to claim 1, wherein said nozzle comprise the flow plate and at least one shoulder unit of giving prominence to from the surface of described flow plate that relies on gravity to guide described etching reagent to flow.
7. substrate thinning apparatus according to claim 6, the described surface of wherein said flow plate tilts.
8. substrate thinning apparatus according to claim 6 wherein is arranged on described nozzle on the upper end of described substrate, so that described etching reagent is mobile along the described inclined surface of described substrate from the upper end of described substrate.
9. method of using the substrate thinning apparatus thin substrate, described method comprises step:
The angle of inclination of etched substrate is treated in setting; With
The etching reagent that is used in the described substrate of etching flows on the surface of described substrate.
10. method according to claim 9, wherein said etching reagent flow to the lower end of described substrate from the upper end of described substrate along the inclined surface of described substrate.
11. method according to claim 9, wherein said substrate is a glass substrate.
12. method according to claim 9 is wherein by carrying out the setting to the substrate with angle of inclination with respect to the back up pad of the described substrate of tilting axis inclination support.
13. method according to claim 9, wherein said etching reagent flows on the surface of described glass substrate with stable status.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070025590A KR100865767B1 (en) | 2007-03-15 | 2007-03-15 | Device for slimming of plate and method for slimming of plate |
| KR10-2007-0025590 | 2007-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101265030A true CN101265030A (en) | 2008-09-17 |
| CN101265030B CN101265030B (en) | 2011-04-06 |
Family
ID=39987754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100963263A Expired - Fee Related CN101265030B (en) | 2007-03-15 | 2008-03-14 | Substrate thinning apparatus and method for thinning substrate |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100865767B1 (en) |
| CN (1) | CN101265030B (en) |
| TW (1) | TWI394727B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101514081B (en) * | 2009-01-22 | 2011-02-16 | 上海仪捷光电科技有限公司 | Waterfall type laminar flow etching and cutting method |
| CN101481217B (en) * | 2008-01-09 | 2012-05-09 | 伊可尼股份有限公司 | An apparatus for etching a glass substrate |
| CN102659321A (en) * | 2012-05-14 | 2012-09-12 | 深圳市拓捷科技发展有限公司 | Equipment and method for single-surface thinning of multiple pieces of glass |
| CN103508673A (en) * | 2012-06-25 | 2014-01-15 | 江西沃格光电科技有限公司 | Glass basal plate operating table |
| CN108455078A (en) * | 2017-12-21 | 2018-08-28 | 凯盛科技股份有限公司 | A kind of large scale liquid crystal panel thinning single surface bearing basket tool |
| CN108874226A (en) * | 2018-06-29 | 2018-11-23 | 信利光电股份有限公司 | A kind of lithographic method and touch panel unit of touch screen ito film layer |
| CN112645603A (en) * | 2021-01-15 | 2021-04-13 | 赣州帝晶光电科技有限公司 | Special waterfall flow type chemical etching jig and preparation method of ultrathin glass |
| CN113233780A (en) * | 2021-04-07 | 2021-08-10 | 合肥京东方半导体有限公司 | Liquid crystal glass substrate thinning and etching equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101674210B1 (en) * | 2010-06-03 | 2016-11-09 | 동우 화인켐 주식회사 | Etching composition for slope-type etching apparatus and etching method using the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2207878A1 (en) * | 1996-06-20 | 1997-12-20 | Qqc, Inc. | Glassy carbon coatings having water repellant and corrosion-, erosion-, and wear-resistant characteristics |
| US6189482B1 (en) | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
| US6784085B2 (en) | 2000-11-30 | 2004-08-31 | North Carolina State University | MIIIN based materials and methods and apparatus for producing same |
| KR100521399B1 (en) * | 2003-05-26 | 2005-10-12 | 세메스 주식회사 | Apparatus for manufacturing flat panel display devices |
| KR100971511B1 (en) * | 2003-10-29 | 2010-07-21 | 주성엔지니어링(주) | Substrate tray, apparatus for manufacturing LCD and method of transporting substrate using the same |
| JP4071220B2 (en) * | 2004-03-17 | 2008-04-02 | 西山ステンレスケミカル株式会社 | Manufacturing method of glass substrate |
| KR101119798B1 (en) * | 2004-12-29 | 2012-03-23 | 엘지디스플레이 주식회사 | Chemical vapor deposition system |
| JP4643384B2 (en) * | 2005-07-25 | 2011-03-02 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and processing method |
-
2007
- 2007-03-15 KR KR1020070025590A patent/KR100865767B1/en not_active IP Right Cessation
- 2007-09-03 TW TW096132735A patent/TWI394727B/en not_active IP Right Cessation
-
2008
- 2008-03-14 CN CN2008100963263A patent/CN101265030B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101481217B (en) * | 2008-01-09 | 2012-05-09 | 伊可尼股份有限公司 | An apparatus for etching a glass substrate |
| CN101514081B (en) * | 2009-01-22 | 2011-02-16 | 上海仪捷光电科技有限公司 | Waterfall type laminar flow etching and cutting method |
| CN102659321A (en) * | 2012-05-14 | 2012-09-12 | 深圳市拓捷科技发展有限公司 | Equipment and method for single-surface thinning of multiple pieces of glass |
| CN102659321B (en) * | 2012-05-14 | 2015-03-18 | 汕头市拓捷科技有限公司 | Equipment and method for single-surface thinning of multiple pieces of glass |
| CN103508673A (en) * | 2012-06-25 | 2014-01-15 | 江西沃格光电科技有限公司 | Glass basal plate operating table |
| CN108455078A (en) * | 2017-12-21 | 2018-08-28 | 凯盛科技股份有限公司 | A kind of large scale liquid crystal panel thinning single surface bearing basket tool |
| CN108874226A (en) * | 2018-06-29 | 2018-11-23 | 信利光电股份有限公司 | A kind of lithographic method and touch panel unit of touch screen ito film layer |
| CN108874226B (en) * | 2018-06-29 | 2021-06-11 | 信利光电股份有限公司 | Etching method of ITO film layer of touch screen and touch screen assembly |
| CN112645603A (en) * | 2021-01-15 | 2021-04-13 | 赣州帝晶光电科技有限公司 | Special waterfall flow type chemical etching jig and preparation method of ultrathin glass |
| CN113233780A (en) * | 2021-04-07 | 2021-08-10 | 合肥京东方半导体有限公司 | Liquid crystal glass substrate thinning and etching equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100865767B1 (en) | 2008-10-28 |
| TWI394727B (en) | 2013-05-01 |
| TW200837030A (en) | 2008-09-16 |
| CN101265030B (en) | 2011-04-06 |
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