KR20090122894A - Device for slimming of plate and assembly for sliming of plate - Google Patents

Abstract

PURPOSE: A device for slimming a substrate and an assembly thereof are provided to flow an etching solution from a bottom part to a top part of a chamber by including an inlet and an outlet in which etchant is passed inside the chamber. CONSTITUTION: A chamber(112) receives a substrate(114) to be etched. An etchant inlet(126) is arranged toward an inner part of the chamber. A nozzle part(124) of a hollow shape has an inner volume capable of storing the etchant. An etchant outlet(122) is arranged inside the chamber. An etchant storing tub(140) is connected to the inlet and the outlet. The inlet is arranged in a position higher than a level of the etchant.

Description

Device slimming device and substrate slimming device assembly {Device for slimming of plate and assembly for sliming of plate}

The present invention relates to an apparatus and a method for slimming a substrate, and more particularly, to an apparatus and a method for etching a substrate by supplying an etchant to the chamber to simultaneously etch both sides of the substrate by immersing a large substrate in the etching chamber.

In general, a backlight for a display or a glass substrate used for a display needs to be thinly processed in order to make the display itself lighter and thinner. In particular, when processing the glass substrate used in the mobile phone, for example, the initial cell phone model thickness of about 45mm, the weight of about 1.3Kg and the size and weight conditions, about 6.9mm thickness and about 63g thickness Progressively, glass substrate slim technology has been developed. Recently, the thinnest liquid crystal display (LCD) has a thickness of 0.82 mm in glass substrate, and is accelerating ultra-light weight and ultra-slim by attaching an anti-shock sheet directly on the LCD glass.

In this regard, there are various ways to slim the glass substrate through etching. Dipping method for etching by dipping the glass substrate vertically in the bath and etching by spraying the etching liquid for etching with a predetermined injection pressure by using a plurality of spray nozzles on both sides of the glass substrate standing vertically. There is a spray method, a top-down glass thin method in which a chemical liquid for etching is poured down from the upper side of the substrate and etched on both sides of the vertically standing substrate.

1 is a side cross-sectional view illustrating an example of a diching method for etching a glass substrate.

In the technique of FIG. 1, HF of a concentration mixed through an expensive mixing system is used as a chemical liquid for etching a glass substrate. The lower end of the HF etching bath 1 is provided with a bubble plate 50 and a punching plate 60 for ejecting nitrogen gas, and the upper end thereof is covered with a lid 30, and the gap of the lid 30 is removed. In order to seal the water pocket 40 in order. The ultra-pure water 41 is accumulated in the water pocket 40, thereby preventing the toxic HF gas from dissipating to the outside.

The bubble plate 50 and the punching plate 60 are also installed at the lower end of a quick dump rinse (QDR) bath (not shown) to generate nitrogen gas even in the process of washing the glass substrate. In the ultrapure water washing process performed in the QDR bath, the nitrogen gas is also flushed out. The etching process of the glass substrate in the HF etching bath 1 is supplied with the HF solution of which concentration is adjusted from the HF supply tank inside the HF etching bath 1, and the glass substrate is supplied to the HF etching bath 1 filled with the HF solution. After the charged cassette is put in, nitrogen gas is diverged from the lower bubble plate 50 and the punching plate 60.

The cleaning process in the QDR bath sprays ultrapure water through a shower device installed inside the bath to clean the etched foreign matter and HF solution adhering to the glass surface. Even within the QDR bath, nitrogen gas is diverted from the bubble plate 50 and the punching plate 60 installed at the bottom thereof during the washing process to assist the washing.

However, in the case of such a dipping method, it is impossible to differentiate and etch the glass substrate by thickness. That is, the etching error is not accurate. In addition, there is a problem in that the treatment of sludge and white powder generated during etching and the impurity adheres to the glass substrate has a high defect rate. In addition, a large amount of pure water is required, and the reuse rate of chemical liquids is low, and a large amount of bubble generators are essential, which causes excessive stress on the glass substrate which is extremely thin during or after etching, thereby adversely affecting the quality of the glass substrate after etching. There is a problem going crazy.

In addition, in the case of the spray method, there is a problem that a strong stress is transmitted to the substrate by striking the chemical liquid to the substrate and spraying, and the strong mobility of the vertically intersecting nozzle prevents stirring between the new chemical liquid and various salts which are by-products after the oxidation reaction. There is a problem that causes extremely poor regeneration rate of the chemical liquid.

The substrate slimming apparatus and the substrate slimming method of the present invention are to solve the above problems, and have the object of the following invention.

First, to provide a substrate slimming apparatus and method capable of simultaneously etching both sides of the substrate.

Second, to provide a substrate slimming apparatus and method capable of precise substrate etching control.

Third, to provide a substrate slimming apparatus and method that can increase the recovery reuse rate of the chemical liquid for etching.

Fourthly, to provide a substrate slimming apparatus having a compact structure.

Fifth, if necessary, to provide a substrate slimming device of a single-sided etching method and a substrate slimming device assembly of a two-sided etching method.

In order to achieve the above object, a substrate slimming apparatus according to an embodiment of the present invention, the chamber containing a substrate to be etched; An etchant inlet and an etchant outlet spaced apart from each other in the chamber; And an etchant storage tank communicating with the etchant inlet and the etchant outlet, wherein the substrate to be etched is immersed and etched in the etchant in the chamber. Here, the etchant inlet is disposed higher than the level of the etchant.

Here, both sides of the substrate are etched simultaneously.

On the other hand, the substrate is placed upright in the chamber.

In addition, the substrate slimming apparatus further includes a moving means for supporting and moving the substrate.

In addition, the substrate slimming device further includes a frame surrounding an edge of the substrate.

The etchant inlet may be disposed above the chamber and the etchant outlet may be disposed below the chamber.

In this case, the etchant flows from the top of the chamber to the bottom.

Optionally, the etchant inlet may be disposed below the chamber and the etchant outlet may be disposed above the chamber.

In this case, the etchant flows from the bottom of the chamber to the top.

Meanwhile, the etchant has a steady state flow in the chamber.

Substrate slimming method according to an embodiment of the present invention, the step of placing the substrate to be etched in the etchant in the chamber; And flowing an etchant in the chamber.

The chamber may include an inlet and an outlet through which the etchant passes, and the etchant may flow from the top of the chamber to the bottom of the chamber.

Optionally, the chamber has an inlet and an outlet through which the etchant passes, so that the etchant can flow from the bottom of the chamber to the top of the chamber.

Substrate slimming device assembly according to an embodiment of the present invention,

A first chamber containing a first substrate to be etched, an etchant inlet and an etchant outlet disposed spaced apart from each other in the chamber, and an etchant storage tank in communication with the etchant inlet and the etchant outlet; A substrate is a two-sided etching substrate slimming device in which both surfaces are etched by being immersed in an etchant in the chamber;

And a support plate for supporting the second substrate to be etched, a second chamber for receiving the support plate, and a spray nozzle for flowing an etchant to the second substrate, wherein the support plate is inclined to be supported on the support plate. And oriented the second substrate inclined so that the second substrate includes a cross-sectional etching substrate slimming device in which one surface is etched by an etchant in the chamber.

According to the substrate slimming apparatus and the substrate slimming method according to an embodiment of the present invention, the following effects can be obtained.

First, according to the substrate slimming apparatus and the substrate slimming method according to the present invention, both surfaces of the substrate can be etched simultaneously.

Second, according to the substrate slimming device and the substrate slimming method according to the present invention, precise substrate etching control is possible.

Third, according to the substrate slimming device according to the present invention, it is possible to increase the reuse rate after the recovery of the etchant for etching.

Fourth, according to the substrate slimming apparatus according to the present invention, it is possible to provide a substrate slimming apparatus having a compact structure.

Fifth, according to the substrate slimming device assembly according to the present invention, it is possible to simultaneously provide or sequentially provide a substrate slimming device of a single-sided etching method and a substrate slimming device assembly of a double-sided etching method as needed.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic diagram schematically showing a substrate slimming apparatus 100 according to an embodiment of the present invention.

The substrate slimming apparatus 100 according to the present invention includes a support 118 supporting a substrate assembly 115 including a substrate 114 to be etched and a frame 116 surrounding the substrate, a support 118 and the substrate. The chamber 112 includes an assembly 115, a chamber part 110 including an etchant inlet 126 and an etchant outlet 122 for introducing and discharging an etchant for etching the substrate 114.

On the other hand, the substrate slimming device 100 is provided with an etchant reservoir 140 to supply the etching to the chamber portion 110 and to recover the etchant from the chamber portion (110). The etchant reservoir 140 is connected to the plurality of etchant inlets 126 and the etchant outlet 122 formed in the chamber of the chamber 110 through a first flow path 150 and a second flow path 160. do.

In the case where it is necessary to flow the fluid in a forced circulation manner in supplying the etchant, the second flow path 150 and the second flow path 160 between the etchant reservoir 140 and the chamber part 110 are respectively provided. The first pump 152 and the second pump 162 may be installed.

In the substrate slimming apparatus 100 illustrated in FIG. 2, a nozzle unit 124 is disposed above the chamber 112 of the chamber unit 110, and a plurality of etchant inlets 126 are provided in the nozzle unit 124. Are placed. The etchant inlet 126 is preferably arranged in two rows to correspond to both surfaces of the substrate.

Meanwhile, the moving unit 120 for supporting and moving the substrate assembly 115 is provided in the chamber 110. The moving unit 120 supports the frame 116 of the substrate assembly 115 in a structure such as a robot arm.

The substrate assembly 115 is immersed in an etchant in the chamber 112. At least the substrate 114 of the substrate assembly 115 is completely submerged in the etchant. In addition, the substrate assembly 115 is placed upright in the chamber 112. The substrate assembly 115 may be disposed on the support 118. Various support means for vertically standing the substrate assembly 115 may be disposed on the support 118. For example, a V-shaped groove (not shown) may be formed on the support 118 so that the substrate assembly 115 may be fitted into and fixed to the groove.

On the other hand, the nozzle unit 124 is connected to the etchant reservoir 140 by the first flow path 150, the nozzle unit has an internal volume capable of holding a predetermined amount of the etchant is stored in the nozzle unit The etchant is introduced into the chamber through the etchant inlet 126 formed under the nozzle unit 124.

The etchant inlets 126 are disposed against the interior of the chamber. Accordingly, as shown in FIG. 2, the nozzle unit 124 may be formed below the nozzle unit 124 or may be formed on the inner wall of the chamber 112. The etchant inlet 126 and the etchant outlet 122 are spaced apart from each other to allow fluid to flow inside the chamber 112.

The plurality of etchant outlets 122 are connected to the second flow path 160 through the etchant collection tube 128.

3 is a partial perspective view of the chamber part 110 shown in FIG. 2.

Referring to FIG. 3, the internal shape of the chamber 112 is formed to accommodate the substrate assembly 115 accommodated in the chamber 112. A cover 130 having a hole in which the nozzle unit 124 may be mounted is disposed at the center of the chamber 112.

The cross section of the nozzle unit 124 is formed in an inverted triangular prism shape, and the inside of the nozzle unit 124 is empty to store a predetermined amount of etchant. As described above, a plurality of etching solution inlets 126 through which the etching solution is introduced are formed below the nozzle unit 124. 3 illustrates that the etching solution inlet 126 is formed at the lower vertex of the nozzle unit 124, but is not necessarily limited thereto, and the etching solution inlet 126 may introduce the etching solution into the chamber 112. Is placed in position.

An opening through which the extension of the moving unit 120 passes is formed at the side of the cover 130. The moving unit 120 supports the upper side of the substrate assembly 115 to be controlled and operated by a moving control unit outside the chamber unit 110.

The substrate 114 and the frame 116 surrounding the substrate 114 may be placed on the support 118, and a wheel 119 may be disposed below the support 118 for convenience of movement. .

FIG. 4 is a side view illustrating a state in which the chamber shown in FIG. 3 is connected to an etchant reservoir.

Referring to FIG. 4, the etchant stored in the etchant reservoir 140 is supplied to the furnace 124 through the first flow path 150 by a pumping action of the first pump 152. The etchant supplied to the nozzle unit 124 fills the chamber 112 through an etchant inlet 126 disposed above the chamber 112.

The substrate assembly 115 is immersed in the etchant filled in the chamber 112. The movement means 120 supporting and moving the substrate assembly 115 is controlled by the movement control unit 170 outside the chamber 112.

Meanwhile, an etching solution inlet 122 for allowing the etching solution introduced into the chamber 112 to flow out of the chamber 12 is formed at the bottom of the chamber 112. The etchant inlet 122 is connected to the etchant reservoir 140 through the second flow path 160 to form a circulation path of the etchant.

FIG. 5 is a diagram showing an example of the flow direction of the visual liquid in the chamber portion of the substrate slimming device having the structure shown in FIG. 4.

Referring to FIG. 5, a chamber is filled with an etchant 180 and the substrate assembly 115 is immersed in the etchant 180. In this state, the etchant flows through the nozzle unit 124 from the upper portion of the chamber through the etchant inlet 126 and exits the chamber through the etchant outlet 122 formed in the lower portion of the chamber. Thus, the etchant flows from the top to the bottom of the chamber as a whole.

Figure 6 is a side view showing another embodiment of the flow path of the etchant.

Referring to FIG. 6, an etchant inlet 222 is formed in the lower portion of the chamber of the substrate slimming apparatus 200, and an etchant outlet 290 is formed in the upper portion of the chamber. Thus, the etchant flows into the bottom of the chamber and rises to exit the chamber from the top of the chamber. In this case, the etching solution outlet 290 is disposed below the level of the etching solution 280. That is, the etchant flows from the bottom of the lever to the top.

In the example of the etchant flow shown in FIGS. 5 and 6, the etchant is in steady state flow in the chamber. Therefore, the filling amount of the etchant filled in the chamber in a certain amount is maintained even during the continuous inflow and outflow of the etchant.

On the other hand, when the substrate is etched by using the substrate slimming device having such a structure, the substrate is etched by arranging the substrate to be etched in the etchant and flowing the etchant in the chamber. When the etchant flows in the chamber, the flow direction of the etchant may be flowed from the top of the chamber to the bottom, or vice versa, as shown in FIGS. 5 and 6.

7 and 8 illustrate a commercially available slimming device assembly in which a plurality of substrate slimming devices having a double-sided etching method or a plurality of substrate slimming devices having a single-sided etching method are configured.

7 illustrates a substrate slimming device assembly 300 in which a plurality of substrate slimming devices of a double-sided etching method are arranged in parallel. The substrate slimming device assembly 300 includes a substrate 315 to be etched in a substrate slimming device including an etchant inlet 390 and an etchant outlet 322 spaced apart from each other in a chamber, and includes a plurality of such structures. do.

8 illustrates a substrate slimming device assembly 400 having a structure in which a double-sided etching method of the substrate slimming device having the above-described structure and a single-sided substrate slimming device which etches only one surface of the base end are arranged in parallel.

Referring to FIG. 8, the substrate slimming device assembly 400 may include a first chamber 412 containing a first substrate 415 to be etched, and an etchant inlet spaced apart from each other in the first chamber 412. 490) and an etchant outlet 422 and an etchant reservoir (not shown) in communication with the etchant inlet and the etchant outlet, wherein the first substrate to be etched is immersed in an etchant in the chamber to etch both sides thereof. It includes a double-sided etching substrate slimming device. In addition, the substrate slimming device assembly 400 includes a single-sided etching substrate slimming device together with the double-sided etching substrate slimming device. The cross-sectional etching substrate slimming device includes a support plate 410 for supporting the second substrate 420 to be etched, a second chamber 432 for receiving the support plate, and an injection nozzle for flowing an etchant into the second substrate ( 440). Here, the support plate is inclined so that the second substrate supported on the support plate is inclined so that one surface of the second substrate is etched by the etchant in the chamber.

Therefore, in the substrate slimming device assembly 400 illustrated in FIG. 8, both-side etching and cross-section etching can be simultaneously performed as necessary.

Specific configurations of the above-described substrate slimming device, substrate slimming method, and substrate slimming device assembly have been exemplarily described, and various modifications are also included within the scope of the present invention without departing from the scope of protection described in the claims.

The present invention can be used in the technical field to slim the substrate by etching.

1 is a schematic side cross-sectional view of a conventional glass substrate slimming device.

2 is a schematic diagram of a substrate slimming apparatus according to an embodiment of the present invention.

3 is a partially enlarged perspective view of an etching chamber of the substrate slimming apparatus of FIG. 2.

FIG. 4 is a schematic view illustrating the etching chamber of FIG. 3 viewed from the side.

5 is a view illustrating an etching process in a substrate slimming apparatus according to an embodiment of the present invention.

6 is a view illustrating an etching process in a substrate slimming apparatus according to another embodiment of the present invention.

7 is a schematic diagram schematically showing an example of a substrate slimming system with a substrate slimming device according to an embodiment of the present invention.

8 is a schematic diagram schematically showing another example of a substrate slimming system having a substrate slimming device and a conventional slanted substrate slimming device according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100: substrate slimming device 110: chamber portion

112: etching chamber 114: substrate

115: substrate assembly 116: frame

118: support 120: vehicle

122: etching liquid outlet 124: nozzle portion

126: etchant inlet 140: etchant reservoir

150: first flow path 152: first pump

160: second flow path 162: second pump

Claims (10)

A chamber containing a substrate to be etched; A hollow nozzle unit disposed on an upper side of the chamber and having an etching liquid inlet disposed toward the inside of the chamber and having an internal volume capable of holding the etching liquid; An etchant outlet disposed in the chamber; An etchant storage tank in communication with the etchant inlet and the etchant outlet, The substrate to be etched is immersed and etched in the etchant flowing in the chamber, The substrate is placed upright in the chamber, And the etching solution inlet is disposed higher than the level of the etching solution. The method of claim 1, Both sides of the substrate is a substrate slimming device, characterized in that the etching at the same time. The method of claim 1, And a moving means for supporting and moving the substrate. The method of claim 3, wherein Substrate slimming apparatus further comprises a frame surrounding the edge of the substrate The method of claim 1, The etching liquid is a substrate slimming device, characterized in that flow from the top to the bottom of the chamber. The method of claim 1, The etching liquid is a substrate slimming device, characterized in that the steady state flow (steady state flow) in the chamber. The method of claim 4, wherein And a cover disposed in the upper portion of the chamber, the cover having a hole in which a nozzle unit can be mounted. The method of claim 1, And said nozzle portion has an inverted triangular hollow prism shape in cross section. The method of claim 7, wherein And an opening through which an extension of the moving means passes through is formed at the side of the cover. A hollow chamber having a first volume for containing an first substrate to be etched, and an etchant inlet disposed above the first chamber and disposed toward the interior of the first chamber and capable of retaining the etchant; And a nozzle unit, an etchant outlet disposed in the first chamber, and an etchant storage tank communicating with the etchant inlet and the etchant outlet, wherein the first substrate to be etched is immersed in an etchant flowing in the chamber and double-sided. Is etched, the etchant inlet is a two-sided etching substrate slimming device is disposed higher than the level of the etchant; And a support plate for supporting the second substrate to be etched, a second chamber for receiving the support plate, and a spray nozzle for flowing an etchant to the second substrate, wherein the support plate is inclined to be supported on the support plate. And the second substrate is inclinedly oriented so that the second substrate has a single-sided etch substrate slimming device in which one surface is etched by an etchant in the chamber.

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